JP2006523377A - 液浸流体をリソグラフィック投影レンズ下に維持すること - Google Patents
液浸流体をリソグラフィック投影レンズ下に維持すること Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
- G03F7/2055—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
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- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
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- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (45)
- ワークピース上に像を投影するように構成された光学アセンブリと、
前記ワークピースを前記光学アセンブリに隣接して支持するように構成されたワークピーステーブルを有するステージアセンブリと、
前記ワークピーステーブルが前記光学アセンブリから離隔するときに、前記光学アセンブリに隣接するギャップに液浸流体を実質上維持するように構成された液浸流体システムを備える装置。 - 前記液浸流体維持システムが、
前記ワークピースに隣接して配置されたパッドと、
前記パッドが前記ギャップに前記液浸流体を維持するために前記光学アセンブリに隣接して位置付けされるように前記ステージアセンブリを移動するように構成されたステージアセンブリ駆動装置とを備える請求項1に記載の装置。 - 前記液浸流体システムが、さらに前記パッドを前記光学アセンブリに隣接して保持して前記ギャップに前記液浸流体を維持するように構成された第1クランプを備える請求項2に記載の装置。
- 前記第1クランプが、前記光学アセンブリに取り付けられたハウジングに機械的に連結されている請求項3に記載の装置。
- さらに前記ステージアセンブリ上に第2クランプを有し、第2クランプは、前記ワークピーステーブルが前記光学アセンブリに隣接するとき、前記ワークピース上に前記パッドを保持するように構成されている請求項3に記載の装置。
- さらに前記ステージアセンブリ上に第2クランプを有し、該第2クランプは、前記ワークピーステーブルが前記光学アセンブリに隣接するとき、前記ステージアセンブリ上に前記パッドを保持するように構成されている請求項3に記載の装置。
- 前記第1クランプは、前記ワークピーステーブルが前記光学アセンブリから離隔しているときには前記パッドをクランプし、前記ワークピーステーブルが前記光学アセンブリに隣接するときには前記パッドを開放するように構成されている請求項5に記載の装置。
- 前記第2クランプは、前記ワークピーステーブルが前記光学アセンブリから離隔しているときには前記パッドをクランプし、前記ワークピーステーブルが前記光学アセンブリに隣接するときには前記パッドを開放するように構成されている請求項6に記載の装置。
- 前記クランプが、真空クランプ、磁力クランプ、静電クランプ及びメカニカルクランプのいずれか一つのタイプのクランプを備える請求項3に記載の装置。
- 前記液浸流体システムがさらに、
前記光学アセンブリ及び前記ワークピーステーブルを含むステージアセンブリに隣接して位置決めされるパッドと、
前記パッドに連結され、且つ前記ワークピーステーブルが前記光学アセンブリから離隔するときに、前記ギャップに前記液浸流体を維持するために、前記ギャップに前記パッドを挿入するように構成されるモーターとを備える請求項1に記載の装置。 - 前記ステージアセンブリは、さらに、前記ワークピーステーブルに隣接して配置され且つ、前記ワークピースステージを移動するように構成されるワークピースステージを備え、前記ワークピースステージは、さらに、前記ワークピース交換システムがワークピースを交換しているとき、ギャップに挿入されてギャップに前記液浸流体を維持するように構成されたパッドを備える請求項1に記載の装置。
- 前記ワークピースステージは、さらに、前記ワークピース交換システムが前記ワークピースを交換していないときは前記ギャップに隣接する前記パッドを支持し、前記ワークピース交換システムが前記ワークピースを交換しているときは前記パッドを前記ギャップに位置するように構成される支持部材を備える請求項9に記載の装置。
- さらに、第2ワークピースを支持するように構成される第2ワークピーステーブルを含む第2ステージアセンブリと、
前記第1ステージアセンブリと前記第2ステージアセンブリの移動を、前記2つのステージアセンブリが前記光学アセンブリの下方に交互に位置するように制御するように構成された制御システムとを備える請求項1に記載の装置。 - さらに、前記ワークピーステーブル上の前記ワークピースを取り除き、前記ワークピースを第2ワークピースに交換するように構成されたワークピース交換システムを備える請求項1に記載の装置。
- 前記ワークピース交換システムが、前記ワークピースを取り出し、前記ワークピースを第2ワークピースに交換するためのロボットを備える請求項14に記載の装置。
- さらに前記ワークピースをアライメントするためのアライメントツールを備える請求項1に記載の装置。
- さらに前記ギャップに液浸流体を供給し、前記ギャップから液浸流体を除去するように構成される環境システムを備える請求項1に記載の装置。
- 前記ステージアセンブリが前記ワークピーステーブルと第2ワークピーステーブルを備え、前記ワークピーステーブルと第2ワークピーステーブルは、前記ワークピースと第2ワークピースを交互に前記光学アセンブリにそれぞれ隣接して支持するように構成されている請求項1に記載の装置。
- 前記液浸流体維持システムは、前記ワークピーステーブル又は第2ワークピーステーブルが前記光学アセンブリから離隔するときに、前記ギャップに前記液浸流体を維持するために用いられるパッドを備える請求項18に記載の装置。
- さらに、パターンが定義されたレチクルを保持するように構成されたレチクルステージと、
前記レチクルにより定義された前記パターンを、前記光学アセンブリを通じて前記ワークピース上に投影するように構成された投影システムとを備える請求項1に記載の装置。 - 前記装置がリソグラフィマシンである請求項1に記載の装置。
- 前記ワークピースが、半導体ウェハまたはLCDディスプレイパネルである請求項1に記載の装置。
- 前記液浸流体システムが、さらに、前記ステージアセンブリに隣接して位置決めされるように構成され、前記ステージアセンブリとほぼ連続な表面を形成し且つ、前記ワークピースが前記光学アセンブリから離隔するときに前記ステージアセンブリと共に移動するように構成される第2ステージを備える請求項1に記載の装置。
- 前記第2ステージが、前記光学アセンブリに隣接する第2ワークピースを支持するように構成される第2ワークピーステーブルを含む請求項23に記載の装置。
- 前記第2ステージがパッドを備える請求項23に記載の装置。
- 像を投影するように構成された光学アセンブリと、
ワークピースを前記光学アセンブリに隣接して支持するように構成されたワークピーステーブルを含む第1ステージアセンブリと、
前記光学アセンブリと前記ステージアセンブリ上の前記ワークピースの間のギャップであって、液浸流体によって満たされるように構成されているギャップと、
前記第1ステージに隣接して位置決めされるように構成された第2ステージであって、前記第1ステージ及び前記第2ステージが前記光学アセンブリの下で共に移動されるときに、前記ギャップの前記流体がほぼ維持されるように、実質的に連続する表面を形成している第1ステージ及び第2ステージとを備える装置。 - さらに、前記第1ステージ及び前記第2ステージを移動するモーターを備える請求項26に記載の装置。
- 前記第2ステージは、前記第2ステージが前記光学アセンブリの下方に位置付けられているときに、第2ワークピースを前記光学アセンブリに隣接して支持するように構成される第2ワークピーステーブルを含む第2ステージアセンブリである請求項26に記載の装置。
- 前記第2ステージがパッドを支持するように構成されたパッドステージである請求項26に記載の装置。
- 前記パッドは、それらに限定されないが、プラスチック、金属及びセラミックの一つの材料によって製造されている請求項2に記載の装置。
- 前記パッドがテフロンでコーティングされている請求項30に記載の装置。
- さらにArFエキシマレーザーを含む照明源を備え、前記液浸流体が水を含み、前記ワークピースが前記液浸流体を通して露光される請求項21に記載の装置。
- 前記液浸流体システムがさらに、
前記光学アセンブリに隣接して前記光学アセンブリと液浸部材との間のギャップに前記液浸流体を維持するように構成される液浸部材を備える請求項21に記載の装置。 - 前記液浸部材がパッドを含む請求項33に記載の装置。
- 前記液浸流体システムが、前記液浸部材を前記光学アセンブリに隣接する前記ギャップから又は前記ギャップへ移動させるように構成される移動システムを含む請求項33に記載の装置。
- 前記移動システムが前記ステージアセンブリの一部を含む請求項35に記載の装置。
- 前記液浸部材が前記ステージアセンブリに着脱可能である請求項36に記載の装置。
- 前記移動システムが前記液浸部材を前記ワークピーステーブルとは独立に移動する請求項35に記載の装置。
- 前記液浸部材が、前記光学アセンブリと前記液浸部材との間の前記ギャップに前記液浸流体を保持するために、前記光学アセンブリに相対してクランプされる請求項33に記載の装置。
- 前記液浸流体が前記光学アセンブリと前記液浸部材との間の前記ギャップに保持されている間、前記ワークピーステーブルが前記液浸部材とは独立に移動可能である請求項33に記載の装置。
- 前記液浸流体が前記光学アセンブリと前記液浸部材との間の前記ギャップに維持されている間、ワークピース交換動作が実行される請求項33に記載の装置。
- 前記液浸部材が前記液浸流体を弾く表面を有する請求項33に記載の装置。
- 前記液浸部材の表面がテフロンでコーティングされている請求項42に記載の装置。
- 前記液浸部材が、プラスチック、金属及びセラミックスの一つの材料で製造されている請求項42記載の装置。
- 請求項33に記載の装置を用いるマイクロデバイス製造方法。
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