JP4352874B2 - 露光装置及びデバイス製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 290
- 239000007788 liquid Substances 0.000 claims description 288
- 230000003287 optical effect Effects 0.000 claims description 287
- 238000001514 detection method Methods 0.000 claims description 239
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000007654 immersion Methods 0.000 description 69
- 238000000034 method Methods 0.000 description 57
- 238000011084 recovery Methods 0.000 description 49
- 230000008569 process Effects 0.000 description 39
- 238000005259 measurement Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000003860 storage Methods 0.000 description 12
- 230000002950 deficient Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005286 illumination Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 101000891579 Homo sapiens Microtubule-associated protein tau Proteins 0.000 description 3
- 102100040243 Microtubule-associated protein tau Human genes 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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Description
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
本発明の露光装置(EX)は、投影光学系(PL)と基板(P)との間の少なくとも一部を液体(50)で満たし、投影光学系(PL)と液体(50)とを介してパターンの像を基板(P)上に投影することによって、基板(P)を露光する露光装置において、投影光学系(PL)と基板(P)との間の液体(50)中の気泡を検出する気泡検出器(20)を備えたことを特徴とする。
また、本発明のデバイス製造方法は、上記記載の露光装置(EX)を用いることを特徴とする。
図1において、露光装置EXは、マスクMを支持するマスクステージMSTと、基板Pを支持する基板ステージPSTと、マスクステージMSTに支持されているマスクMを露光光ELで照明する照明光学系ILと、露光光ELで照明されたマスクMのパターンの像を基板ステージPSTに支持されている基板Pに投影露光する投影光学系PLと、露光装置EX全体の動作を統括制御する制御装置CONTと、制御装置CONTに接続され、露光処理に関する情報を記憶する記憶装置MRYと、露光処理に関する情報を表示する表示装置DSとを備えている。
図7(a)に示すように、例えば検出光がスポット光であってその光束の径がD1である場合、検出光を基板Pに対して傾斜方向から投射することにより、基板P上における検出光は図7(b)に示すようにX軸方向(走査方向)を長手方向とする楕円状となる。検出光の基板P上における楕円状の検出領域の長手方向の大きさD2は上記径D1より大きい。すなわち、例えば検出光を基板Pの表面に対して垂直方向から照射した場合は検出光の検出領域のX軸方向における大きさはD1となるが、傾斜方向から検出光を照射することで、X軸方向においてD1より大きいD2の検出領域で気泡18を検出することができる。したがって、X軸方向に走査する基板P上の気泡18を検出する際、気泡18は径D1の検出領域に比べてより広い検出領域で検出されることになり、気泡検出器20は気泡18の検出精度を向上することができる。なお、ここでは検出光をスポット光として説明したが、検出光がスリット光であっても同様の効果が得られる。
マスクMがマスクステージMSTにロードされるとともに、基板Pが基板ステージPSTにロードされたら、制御装置CONTは液体供給装置1及び液体回収装置2を駆動し、空間56に対する液体供給動作を開始する。これにより、投影光学系PLの下面7(先端部60A)と基板Pの投影領域PAとの間に液体50が満たされる(ステップS1)。
制御装置CONTは基板P表面のZ軸方向における位置を検出しつつ基板Pに対して露光処理する。
例えば、径の小さい気泡18が液体50中を僅かに浮遊している場合など、気泡18が液体中に存在していても所望のパターン転写精度を得られる場合がある。そこで、気泡18の量及び大きさに関するしきい値を予め求めておき、気泡検出結果が前記しきい値以下であれば基板Pの露光を適切に行うことができると判断できる。すなわち、制御装置CONTは、記憶装置MRYに記憶されている気泡に関するしきい値情報を参照し、気泡検出器20の検出結果に基づいて、基板Pの露光が適切に行われたか否かを判断する。なお、前記しきい値は例えば予め実験的に求めることができ、記憶装置MRYに記憶されている。
そして、露光処理終了後において、記憶装置MRYに記憶した情報に基づいて、複数のショット領域SHのうちパターンの像の結像が適切に行われなかったショット領域SH’は、その後に続く、別のレイヤの露光処理から除外されたり、レジストをつけ直して再露光される。
図8は、投影光学系PLの先端部近傍を示す側面図である。図8において、投影光学系PLの先端部の光学素子60と基板Pとの間には液体50が満たされており、基板P上には液体50の液浸領域ARが形成されている。なお図8には、基板P上に液体50を供給する供給ノズル4及び基板P上の液体50を回収する回収ノズル5は図示されていない。
なお、投影領域PAの外側、特に投影領域PAに対して基板Pの走査方向(X軸方向)に離れた位置に照射される検出光があってもよい。
マスクステージMSTの移動により発生する反力は、投影光学系PLに伝わらないように、特開平8−330224号公報(US S/N 08/416,558)に記載されているように、フレーム部材を用いて機械的に床(大地)に逃がしてもよい。
21…投射系、22…受光系、50…液体、56…空間、CONT…制御装置、
EX…露光装置、PL…投影光学系、P…基板
Claims (25)
- 投影光学系と基板との間の少なくとも一部を液体で満たし、前記投影光学系と前記液体とを介してパターンの像を基板上に投影することによって、前記基板を露光する露光装置において、
前記投影光学系と前記基板との間の液体中の気泡を検出する気泡検出器を備えたことを特徴とする露光装置。 - 前記気泡検出器は、前記気泡を光学的に検出することを特徴とする請求項1記載の露光装置。
- 前記気泡検出器は、前記液体に光を投射する投射系と、前記液体からの光を受光する受光系とを有することを特徴とする請求項2記載の露光装置。
- 前記基板は所定の走査方向に移動しながら走査露光され、
前記投射系は、前記投影光学系の光軸に対して前記走査方向に離れた位置から光を投射することを特徴とする請求項3記載の露光装置。 - 前記液体を供給する供給装置を備え、
前記液体は、前記走査露光中に、前記投影光学系と前記基板との間を前記走査方向と平行に流れることを特徴とする請求項4記載の露光装置。 - 前記気泡検出器は、前記受光系で検出される光の強度に基づいて、前記気泡の量を検知することを特徴とする請求項3〜5のいずれか一項記載の露光装置。
- 前記気泡検出器の検出結果に基づいて、前記基板の露光が適切に行われたか否かが判断されることを特徴とする請求項1〜6のいずれか一項記載の露光装置。
- 前記基板上の複数のショット領域のそれぞれの露光中に前記気泡検出器による気泡の検出を行い、
該検出結果に基づき、前記気泡により前記パターンの像の結像が適切に行われなかったショット領域を記憶することを特徴とする請求項7記載の露光装置。 - 投影光学系と基板との間の少なくとも一部を液体で満たし、前記投影光学系と前記液体とを介してパターンの像を基板上に投影することによって、前記基板を露光する露光装置において、
前記基板を保持するとともに前記投影光学系に対して相対移動可能なステージと、
前記投影光学系と前記基板との間に光を投射する投射系と、前記投影光学系と前記基板との間からの光を受光するための受光系とを有し、該受光系の受光結果に基づいて前記投影光学系と前記基板との間の少なくとも一部の液体が切れるのを検出する液切検出装置と、を備えることを特徴とする露光装置。 - 前記液切検出装置は、前記液体からの光の前記受光系への非入射により前記液体が切れるのを検出することを特徴とする請求項9記載の露光装置。
- 投影光学系と液体とを介して露光光を基板に照射して前記基板を露光する露光装置において、
前記露光光の光路に光を投射する投射系と、前記光路からの光を受光するための受光系とを有し、該受光系の出力に基づいて前記露光光の光路中における気体部分の有無を検出する気体検出系を備えたことを特徴とする露光装置。 - 前記気体検出系は、前記露光光の光路中の気泡を検出することを特徴とする請求項11記載の露光装置。
- 前記気体検出系は、前記露光光の光路が液体で満たされているか否かを検出することを特徴とする請求項11又は12記載の露光装置。
- 前記気体検出系の出力に基づいて、前記基板の露光開始の適否を判断することを特徴とする請求項11〜13のいずれか一項記載の露光装置。
- 前記気体検出系は、前記基板の露光中に前記露光光の光路中の気体の有無を検出することを特徴とする請求項11〜14のいずれか一項記載の露光装置。
- 前記気体検出系の受光系は、前記光路からの散乱光を受光することを特徴とする請求項11〜15のいずれか一項記載の露光装置。
- 前記気体検出系は、前記基板上の液体を介して検出光を前記基板上に投射するとともに、その反射光を受光することによって、前記基板の面位置を検出する面位置検出機能を備えていることを特徴とする請求項11記載の露光装置。
- 投影光学系と液体とを介して露光光を基板に照射して前記基板を露光する露光装置において、
前記基板上の液体を介して前記基板上に検出光を投射するとともに、前記基板上で反射した検出光を受光して、前記基板の面位置を検出する面位置検出系を備え、
前記面位置検出系の出力に基づいて、前記検出光の光路中における気体部分の有無を検出することを特徴とする露光装置。 - 前記検出光は、前記露光光の光路を通過することを特徴とする請求項18記載の露光装置。
- 前記面位置検出系の出力に基づいて、前記検出光の光路中の気泡を検出することを特徴とする請求項18又は19記載の露光装置。
- 前記面位置検出系の出力に基づいて、前記基板の露光開始の適否を判断することを特徴とする請求項18〜20のいずれか一項記載の露光装置。
- 前記面位置検出系の出力に基づいて、前記基板の露光中に、前記検出光の光路中の気体の有無を検出することを特徴とする請求項18〜21のいずれか一項記載の露光装置。
- 前記面位置検出系は、前記基板上に複数の検出光を投射することを特徴とする請求項18〜22のいずれか一項記載の露光装置。
- 前記面位置検出系は、前記投影光学系の一部の光学部材を介して前記検出光を前記基板上に投射することを特徴とする請求項18〜23のいずれか一項記載の露光装置。
- 請求項1〜請求項24のいずれか一項記載の露光装置を用いることを特徴とするデバイス製造方法。
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JP2003393858A JP4352874B2 (ja) | 2002-12-10 | 2003-11-25 | 露光装置及びデバイス製造方法 |
PCT/JP2003/015737 WO2004053958A1 (ja) | 2002-12-10 | 2003-12-09 | 露光装置及びデバイス製造方法 |
EP03777406A EP1571699A4 (en) | 2002-12-10 | 2003-12-09 | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
KR1020057009284A KR101066084B1 (ko) | 2002-12-10 | 2003-12-09 | 노광장치 및 디바이스 제조방법 |
SG200704275-7A SG158744A1 (en) | 2002-12-10 | 2003-12-09 | Exposure apparatus and method for producing device |
AU2003289273A AU2003289273A1 (en) | 2002-12-10 | 2003-12-09 | Exposure apparatus and method for manufacturing device |
TW092134806A TW200421443A (en) | 2002-12-10 | 2003-12-10 | Exposure apparatus and device manufacturing method |
US11/147,288 US7460207B2 (en) | 2002-12-10 | 2005-06-08 | Exposure apparatus and method for producing device |
US11/345,392 US7436487B2 (en) | 2002-12-10 | 2006-02-02 | Exposure apparatus and method for producing device |
US11/350,787 US7379158B2 (en) | 2002-12-10 | 2006-02-10 | Exposure apparatus and method for producing device |
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US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
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Also Published As
Publication number | Publication date |
---|---|
EP1571699A4 (en) | 2007-10-31 |
US20050264774A1 (en) | 2005-12-01 |
US7379158B2 (en) | 2008-05-27 |
US7436487B2 (en) | 2008-10-14 |
AU2003289273A1 (en) | 2004-06-30 |
TW200421443A (en) | 2004-10-16 |
EP1571699A1 (en) | 2005-09-07 |
SG158744A1 (en) | 2010-02-26 |
WO2004053958A1 (ja) | 2004-06-24 |
US7460207B2 (en) | 2008-12-02 |
TWI331357B (ja) | 2010-10-01 |
US20060126044A1 (en) | 2006-06-15 |
KR101066084B1 (ko) | 2011-09-20 |
JP2004207696A (ja) | 2004-07-22 |
US20060126043A1 (en) | 2006-06-15 |
KR20050085134A (ko) | 2005-08-29 |
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