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46th ESSDERC 2016: Lausanne, Switzerland
- 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. IEEE 2016, ISBN 978-1-5090-2969-3
- Greg Yeric:
At the core of system scaling. 1-2 - Ahmad Bahai:
Ultra-low energy systems: Analog to information. 3-6 - Tobi Delbrück:
Neuromorophic vision sensing and processing. 7-14 - Laurent Malier, Andreia Cathelin, Giorgio Cesana, Laurent Le Pailleur:
Low power advanced digital technologies to enable Internet of Things. 15-16 - Matthias Steffen, Jay M. Gambetta, Jerry M. Chow:
Progress, status, and prospects of superconducting qubits for quantum computing. 17-20 - John A. Rogers:
Soft electronics for the human body. 21-22
- M. F. Chowdhury, Syed Zeeshan Ali, S. Boual, Richard Hopper, Florin Udrea:
Development of plasmonic MEMS CMOS infrared sensors for occupancy detection. 97-100 - Andrea Ficorella, Lucio Pancheri
, Gian-Franco Dalla Betta, Paolo Brogi
Crosstalk mapping in CMOS SPAD arrays. 101-104 - Dana Cristea
Solution processable PbS quantum dots/silicon multispectral detectors. 105-108 - Wogong Zhang
Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios. 109-112 - Sorin Cristoloveanu, Maryline Bawedin:
FDSOI devices: Issues and innovative solutions. 117-120 - Hiroshi Iwai:
End of the downsizing and world after that. 121-126 - R. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, Didier Dutartre, A. Claverie, Michel Haond:
Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. 127-130 - Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean:
Towards high performance sub-10nm finW bulk FinFET technology. 131-134 - Gérard Ghibaudo
Electrical characterization of FDSOI CMOS devices. 135-141 - R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. 142-145 - Alessandro Pezzotta, C.-M. Zhang, Farzan Jazaeri, Claudio Bruschini
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. 146-149 - Ken Uchida, Tsunaki Takahashi:
Thermal-aware CMOS: Challenges for future technology and design evolutions. 150-153 - Jinfeng Kang, Peng Huang, Zhe Chen, Yudi Zhao, Chen Liu, Runze Han, Lifeng Liu, Xiaoyan Liu, Yangyuan Wang, Bin Gao:
Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. 154-159 - Karsten Fleck, Ulrich Böttger, Rainer Waser
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices. 160-163 - Wonjoo Kim, Dirk J. Wouters, Stephan Menzel, Christian Rodenbucher, Rainer Waser, Vikas Rana:
Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices. 164-167 - M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. 168-171 - Vice Sodan, Federica Lidia Teresa Maggioni, Herman Oprins, Steve Stoffels
New fast distributed thermal model for analysis of GaN based power devices. 172-175 - Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture
Performance of tri-gate AlGaN/GaN HEMTs. 176-179 - Michele Visciarelli
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. 180-183 - Martin Rau, Troels Markussen
Performance study of strained III-V materials for ultra-thin body transistor applications. 184-187 - Hamilton Carrillo-Nunez, Reto Rhyner, Mathieu Luisier, Andreas Schenk:
Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs. 188-191 - B. Jayant Baliga:
SiC power devices: From conception to social impact. 192-197 - Raheleh Hedayati, Luigia Lanni, Ana Rusu, Carl-Mikael Zetterling:
Wide temperature range integrated amplifier in bipolar 4H-SiC technology. 198-201 - Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen:
600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. 202-205 - Anant Agarwal, Laura Marlino, Robert Ivester, Mark Johnson:
Wide Bandgap power devices and applications; the U.S. initiative. 206-209 - Hassan El Dirani, Pascal Fonteneau, Yohann Solaro, Philippe Ferrari, Sorin Cristoloveanu:
Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes. 210-213 - Jin-Woo Han, Victor Moroz, Andrey Kucherov, Dinesh Maheshwari, Valentin Abramzon, Zvi Or-Bach, Yoshio Nishi, Yuniarto Widjaja:
A CMOS-compatible boosted transistor having >2× drive current and low leakage current. 214-217 - Melanie Brocard, Guillaume Berhault, Sébastien Thuries, Fabien Clermidy, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, François Andrieu, Fabien Deprat, Joris Lacord, Olivier Rozeau, Gerald Cibrario, Olivier Billoint:
Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. 218-221 - Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot:
Analog performance of strained SOI nanowires down to 10K. 222-225 - Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot:
Opportunities brought by sequential 3D CoolCube™ integration. 226-229 - Z. Geng, W. Kinberger, Ralf Granzner, J. Pezoldt, Frank Schwierz:
2D electronics - opportunities and limitations. 230-235 - Vikram Passi
Contact resistance Study of "edge-contacted" metal-graphene interfaces. 236-239 - Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee
Physics-based electrical compact model for monolayer Graphene FETs. 240-243 - Mario Iannazzo, Eduard Alarcón, Himadri Pandey
CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancement. 244-247 - Amy Whitcombe, Scott Taylor, Martin Denham, Vladimir M. Milovanovic, Borivoje Nikolic
On-chip I-V variability and random telegraph noise characterization in 28 nm CMOS. 248-251 - Francesco Maria Puglisi
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. 252-255 - Christoforos G. Theodorou
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. 256-259 - C. Mukherjee
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. 260-263 - Vishal Agarwal, Anne-Johan Annema, Satadal Dutta
Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs. 264-267 - Hiroshi Mizuta, Jian Sun, Manoharan Muruganathan
Novel suspended graphene devices for extreme sensing. 268-271 - Christofer Hierold, Kiran Chikkadi, Miroslav Haluska, Cosmin Roman
Ultra low power NO2 gas sensors based on suspended CNFETs. 272-275 - C. H. De Groot, Long Tao Dong, A. Usgaocar, V. M. C. Chavagnac:
Composition-modulated electrodeposited PdNi-Si hydrogen sensors for low power applications. 276-279 - Viorel Avramescu, Andrea De Luca
CMOS-compatible SOI micro-hotplate-based oxygen sensor. 280-283 - Dumitru Dumcenco, Dmitry Ovchinnikov
High-quality synthetic 2D transition metal dichalcogenide semiconductors. 284-286 - Daniel S. Schneider
Graphene / a-Si: H multispectral photodetectors. 287-290 - Takamasa Kawanago, Ryo Ikoma, Du Wanjing, Shunri Oda
Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics. 291-294 - Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong
Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric. 295-298 - Anderson D. Smith, Karim Elgammal
Toward effective passivation of graphene to humidity sensing effects. 299-302 - Moshe Agam, Jaroslav Pjencak, Dusan Prejda, Agajan Suwhanov, Thierry Yao, Ladislav Seliga:
Management of parasitic bipolars in modular high power LDMOS technology. 303-306 - Cem Alper, Jose L. Padilla, Pierpaolo Palestri, Adrian M. Ionescu:
Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET. 307-310 - Thomas Windbacher
The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. 311-314 - Enrico Piccinini, Massimo Rudan, Rossella Brunetti:
Closed-form transition rate in hopping conduction. 315-318 - Camillo Stefanucci, Pietro Buccella, Ehrenfried Seebacher, Alexander Steinmair, Maher Kayal, Jean-Michel Sallese:
Analysis of substrate currents propagation in HVCMOS technology. 319-322 - Ki-Sik Im, Chul-Ho Won, Jae Hwa Seo, In Man Kang, Sindhuri Vodapally, Yong Soo Lee, Jung-Hee Lee, Yong-Tae Kim, Sorin Cristoloveanu:
Novel AlGaN/GaN omega-FinFETs with excellent device performances. 323-326 - D. Grutzmacher, Martin Mikulics
Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures. 327-329 - Mutsuko Hatano, Takayuki Iwasaki, Satoshi Yamasaki, Toshiharu Makino:
Diamond electronics. 330-332 - Shunri Oda
Quantum dot devices: Technology vehicles for nanoscale physics and paths for future applications. 333-336 - Gabriel Droulers
A manufacturable process for single electron charge detection, a step towards quantum computing. 337-340 - Siegfried F. Karg, Vanessa Schaller
Ballistic transport and high thermopower in one-dimensional InAs nanowires. 341-344 - Clara F. Moldovan, Wolfgang A. Vitale, Michele Tamagnone, Juan R. Mosig, Adrian M. Ionescu:
Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs. 345-348 - Alan C. Seabaugh, Cristobal Alessandri
Steep slope transistors: Tunnel FETs and beyond. 349-351 - Wolfgang A. Vitale, Michele Tamagnone, Clara F. Moldovan, Nicolas Emond, Emanuele A. Casu, Luca Petit
Field-enhanced design of steep-slope VO2 switches for low actuation voltage. 352-355 - Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell. 356-359 - Tommaso Rollo, David Esseni
Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swing. 360-363 - Uwe Schroeder
Impact of field cycling on HfO2 based non-volatile memory devices. 364-368 - Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. 369-372 - Manuel Le Gallo
Inherent stochasticity in phase-change memory devices. 373-376 - Nicola Ciocchini, Mario Laudato
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability. 377-380 - Giovanni A. Salvatore
Soft and bio-degradable electronics: Technology challenges and future applications. 381-384 - Bogdan C. Raducanu, Refet Firat Yazicioglu, Carolina Mora Lopez
Time multiplexed active neural probe with 678 parallel recording sites. 385-388 - Sufi Zafar, Tak Ning:
Bipolar junction transistor based sensors for chemical and biological sensing. 389-392 - I. Zadorozhnyi, Svetlana A. Vitusevich
Signal-to-noise ratio enhancement using the gate coupling effect. 393-396 - Katsuhiro Tomioka
Advances in steep-slope tunnel FETs. 397-402 - Kirsten E. Moselund
Complementary III-V heterostructure tunnel FETs. 403-407 - Chang Liu, Qinghua Han, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Andreas T. Tiedemann, Stefan Trellenkamp, Wenjie Yu, Xi Wang, Siegfried Mantl, Qing-Tai Zhao
Si n-TFETs on ultra thin body with suppressed ambipolarity. 408-411 - Devin Verreck, Anne S. Verhulst, Bart Soree
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. 412-415 - Stefania Carapezzi
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. 416-419 - Axel Erlebach, K. H. Lee, Fabian M. Bufler:
Empirical ballistic mobility model for drift-diffusion simulation. 420-423 - Gabriel Mugny, F. G. Pereira, Denis Rideau, François Triozon
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. 424-427 - Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. 428-431 - Yangyin Chen, Chris Petti:
ReRAM technology evolution for storage class memory application. 432-435 - Gina C. Adam
Highly-uniform multi-layer ReRAM crossbar circuits. 436-439 - Severin Sidler
Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response. 440-443 - Francesco Ivaldi
New approach for a multi-cantilever arrays sensor system with advanced MOEMS readout. 444-447 - Md Abdullah Al Hafiz
Microelectromechanical resonator based digital logic elements. 448-451 - Erick Garcia Cordero, Hoel Guerin, Amira Muhech, Francesco Bellando, Adrian M. Ionescu:
Heterogeneous integration of low power pH FinFET sensors with passive capillary microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode. 452-455 - Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. 456-459 - Antonio Valletta, Matteo Rapisarda
A large signal non quasi static compact model for printed organic thin film transistors. 460-463 - Nikolaos Mavredakis, Matthias Bucher
Compact model for variability of low frequency noise due to number fluctuation effect. 464-467 - Ales Chvála, Juraj Marek
Advanced 3-D device and circuit electrothermal simulations of power integrated circuit. 468-471 - Muhammad Nawaz, Kalle Ilves:
Replacing Si to SiC: Opportunities and challenges. 472-475
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