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Oliver Ambacher
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2020 – today
- 2021
- [j8]Michael Basler
, Richard Reiner
Building Blocks for GaN Power Integration. IEEE Access 9: 163122-163137 (2021) - 2020
- [c12]Tobias Kemmer
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c11]Alexander Dyck
A Dielectric-Filled Cavity-Backed Lens-Coupled Dipole Antenna at 100 GHz. RWS 2019: 1-3 - 2017
- [c10]Markus Reusch
Flexural plate wave sensors with buried IDT for sensing in liquids. IEEE SENSORS 2017: 1-3 - 2016
- [j7]Mathias Klenner
Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates. IEEE Trans. Instrum. Meas. 65(11): 2551-2559 (2016) - [c9]Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture
Performance of tri-gate AlGaN/GaN HEMTs. ESSDERC 2016: 176-179 - [c8]Jochen Stehle, Oliver Ambacher, Ashwin Samarao, Gary Yama, Uma Krishnamoorthy:
Study of a silicon parallel plate capacitor as a dew point sensor. IEEE SENSORS 2016: 1-3 - 2015
- [c7]Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS 2015: 2 - 2014
- [j6]Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014) - [c6]Wolfgang Freude
Wireless communications on THz carriers takes shape. ICTON 2014: 1-4 - 2013
- [c5]Swen Koenig, Florian Boes, Daniel Lopez-Diaz, Jochen Antes, Ralf Henneberger, René Schmogrow, David Hillerkuss, Robert Palmer, Thomas Zwick, Christian Koos, Wolfgang Freude, Oliver Ambacher, Ingmar Kallfass, Juerg Leuthold:
100 Gbit/s wireless link with mm-wave photonics. OFC/NFOEC 2013: 1-3 - 2012
- [c4]Michael Schlechtweg, Axel Tessmann, Axel Hülsmann, Ingmar Kallfass
Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications. Future Security 2012: 200-211 - [c3]Ernst Weissbrodt, Axel Tessmann, Michael Schlechtweg, Ingmar Kallfass
Active load modules for W-band radiometer calibration. IGARSS 2012: 2945-2948 - [c2]Jochen Antes, Tobias Mahler, Thomas Zwick
Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link. ISSSE 2012: 1-4 - 2011
- [j5]Axel Tessmann, Arnulf Leuther, Volker Hurm, Ingmar Kallfass
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. IEEE J. Solid State Circuits 46(10): 2193-2202 (2011) - [j4]M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51(2): 224-228 (2011) - [c1]Ernst Weissbrodt, Ingmar Kallfass
W-band radiometer system with switching front-end for multi-load calibration. IGARSS 2011: 3843-3846 - 2010
- [j3]Stephan Maroldt, Dirk Wiegner, Stanislav Vitanov, Vassil Palankovski, Rüdiger Quay
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. IEICE Trans. Electron. 93-C(8): 1238-1244 (2010)
2000 – 2009
- 2009
- [j2]Maximilian Dammann, W. Pletschen, Patrick Waltereit
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49(5): 474-477 (2009) - 2008
- [j1]Axel Tessmann, Ingmar Kallfass, Arnulf Leuther, Hermann Massler, Michael Kuri, Markus Riessle, Martin Zink, Rainer Sommer, Alfred Wahlen, Helmut Essen, Volker Hurm, Michael Schlechtweg, Oliver Ambacher:
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar. IEEE J. Solid State Circuits 43(10): 2194-2205 (2008)
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