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Jean-Michel Sallese
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2020 – today
- 2023
- [c27]Diego Barrettino
, Christoph Zumbühl, Raphaël Kummer, Markus Thalmann, Carolina Balbi, Giuseppe Vassalli, Rosane Moura Dos Santos, Jean-Michel Sallese:
Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes. SENSORS 2023: 1-4 - 2022
- [j7]Amin Rassekh
Tunneling Current Through a Double Quantum Dots System. IEEE Access 10: 75245-75256 (2022) - 2021
- [c26]Ashkhen Yesayan, Jean-Michel Sallese:
Compact Analytical Model of Nanowire Junctionless ISFET. MIXDES 2021: 31-34 - 2020
- [c25]Alexi Bonament, Alexis Prel, Jean-Michel Sallese, Morgan Madec, Christophe Lallement:
Compact Model for Continuous Microfluidic Mixer. MIXDES 2020: 35-39
2010 – 2019
- 2019
- [c24]Wladek Grabinski
FOSS EKV2.6 Verilog-A Compact MOSFET Model. ESSDERC 2019: 190-193 - [c23]Farzan Jazaeri, Arnout Beckers
A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics. MIXDES 2019: 15-25 - 2018
- [c22]Nikolaos Makris
A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs. ESSDERC 2018: 238-241 - [c21]Rosane Moura Dos Santos, Jean-Michel Sallese, Marco Mattavelli, Catherine Dehollain, Diego Barrettino
High Precision Capacitive Moisture Sensor for Polymers. IEEE SENSORS 2018: 1-4 - [c20]Salim El Ghouli, Wladyslaw Grabinski
Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA. MIXDES 2018: 57-62 - [c19]Chiara Rossi
Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics. NEWCAS 2018: 35-39 - 2017
- [c18]Chiara Rossi
SPICE modeling of light induced current in silicon with 'Generalized' lumped devices. ESSDERC 2017: 26-29 - 2016
- [j6]Pietro Buccella, Camillo Stefanucci, Hao Zou, Yasser Moursy, Ramy Iskander, Jean-Michel Sallese, Maher Kayal:
Methodology for 3-D Substrate Network Extraction for SPICE Simulation of Parasitic Currents in Smart Power ICs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35(9): 1489-1502 (2016) - [c17]Camillo Stefanucci, Pietro Buccella, Ehrenfried Seebacher, Alexander Steinmair, Maher Kayal, Jean-Michel Sallese:
Analysis of substrate currents propagation in HVCMOS technology. ESSDERC 2016: 319-322 - [c16]Salim El Ghouli, Patrick Scheer, Michel Minondo, Andre Juge, Thierry Poiroux, Jean-Michel Sallese, Christophe Lallement
Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model. MIXDES 2016: 41-46 - [c15]Pietro Buccella, Camillo Stefanucci, Jean-Michel Sallese, Maher Kayal:
Active guard ring characterization for Smart Power ICs. MIXDES 2016: 305-309 - 2015
- [c14]Camillo Stefanucci, Pietro Buccella, Maher Kayal, Jean-Michel Sallese:
Modeling avalanche breakdown for ESD diodes in integrated circuits. DTIS 2015: 1-3 - [c13]Hao Zou, Yasser Moursy, Ramy Iskander, Camillo Stefanucci, Pietro Buccella, Maher Kayal, Jean-Michel Sallese:
Substrate noise modeling with dedicated CAD framework for smart power ICs. ISCAS 2015: 1554-1557 - [c12]Wladek Grabinski
FOSS EKV 2.6 parameter extractor. MIXDES 2015: 181-186 - [c11]Camillo Stefanucci, Pietro Buccella, Maher Kayal, Jean-Michel Sallese:
Modeling parasitic vertical PNP in HVCMOS. MIXDES 2015: 486-489 - [c10]Pietro Buccella, Camillo Stefanucci, Jean-Michel Sallese, Maher Kayal:
Spice simulation of passive protection in smart power ICs. MIXDES 2015: 500-503 - 2014
- [j5]Maria-Alexandra Paun
Evaluation of characteristic parameters for high performance hall cells. Microelectron. J. 45(9): 1194-1201 (2014) - [c9]Camillo Stefanucci, Pietro Buccella, Maher Kayal, Jean-Michel Sallese:
Optimization strategy of numerical simulations applied to EPFL substrate model. MIXDES 2014: 334-337 - [c8]Pietro Buccella, Camillo Stefanucci, Jean-Michel Sallese, Maher Kayal:
Spice simulation of substrate minority carriers propagation with equivalent electrical circuit. MIXDES 2014: 347-350 - 2013
- [j4]Christian Kauth
System-Level Design Considerations for Carbon Nanotube Electromechanical Resonators. J. Sensors 2013: 384643:1-384643:12 (2013) - [j3]Maria-Alexandra Paun, Jean-Michel Sallese, Maher Kayal:
Hall Effect Sensors Design, Integration and Behavior Analysis. J. Sens. Actuator Networks 2(1): 85-97 (2013) - [j2]Maria-Alexandra Paun
Comparative Study on the Performance of Five Different Hall Effect Devices. Sensors 13(2): 2093-2112 (2013) - [c7]Maria-Alexandra Paun, Jean-Michel Sallese, Maher Kayal:
Characteristic parameters evaluation of Hall cells with high performance. MIXDES 2013: 86-91 - [c6]Lucian Barbut, Farzan Jazaeri, Didier Bouvet, Jean-Michel Sallese:
Design space of twin gate junctionless vertical slit field effect transistors. MIXDES 2013: 393-396 - [c5]Lucian Barbut, Farzan Jazaeri, Didier Bouvet, Jean-Michel Sallese:
Heavily doped junctionless vertical slit FETs with slit width Below 20 nm. MIXDES 2013: 397-400 - 2012
- [c4]Maria-Alexandra Paun
Temperature considerations on Hall Effect sensors current-related sensitivity behaviour. ICECS 2012: 201-204 - 2011
- [c3]Fabrizio Lo Conte, Jean-Michel Sallese, Maher Kayal:
Meshing strategy of equivalent substrate schematic in SMART power IC. ISCAS 2011: 821-824 - 2010
- [j1]Louis Harik, Jean-Michel Sallese, Maher Kayal:
SOI digital pixel sensor based on charge pumping. Microelectron. J. 41(11): 758-765 (2010)
2000 – 2009
- 2006
- [c2]Fabien Prégaldiny, Christophe Lallement, B. Diagne, Jean-Michel Sallese, François Krummenacher:
Compact Modeling of Emerging Technologies with VHDL-AMS. FDL 2006: 23-31 - 2002
- [c1]Pierre C. Fazan, Serguei Okhonin, Mikhail Nagoga, Jean-Michel Sallese:
A simple 1-transistor capacitor-less memory cell for high performance embedded DRAMs. CICC 2002: 99-102
Coauthor Index
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