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Gérard Ghibaudo
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2020 – today
- 2023
- [c40]F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha:
Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. IRPS 2023: 1-4 - 2022
- [c39]F. Serra Di Santa Maria
, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota:
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. ESSDERC 2022: 257-260 - 2021
- [c38]Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou:
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits. ESSDERC 2021: 247-250 - [c37]B. Rrustemi
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC 2021: 295-298 - [c36]Roméo Kom Kammeugne
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC 2021: 299-302 - [c35]Angeliki Tataridou, Gérard Ghibaudo
"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs. IRPS 2021: 1-5 - [c34]Aby-Gaël Viey
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS 2021: 1-8
2010 – 2019
- 2019
- [c33]Aby-Gaël Viey
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS 2019: 1-6 - 2018
- [j34]D. Nouguier, X. Federspiel, Gérard Ghibaudo
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87: 106-112 (2018) - [j33]Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. 88-90: 641-644 (2018) - [c32]Theano A. Karatsori, K. Bennamane, Christoforos G. Theodorou
Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator. ESSDERC 2018: 166-169 - [c31]Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo
Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. ESSDERC 2018: 242-245 - [c30]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6 - 2017
- [j32]Giulio Torrente, Jean Coignus
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79: 281-287 (2017) - [c29]Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC 2017: 144-147 - 2016
- [j31]Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. Microelectron. Reliab. 56: 10-16 (2016) - [c28]Gérard Ghibaudo
Electrical characterization of FDSOI CMOS devices. ESSDERC 2016: 135-141 - [c27]R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC 2016: 142-145 - [c26]Christoforos G. Theodorou
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC 2016: 256-259 - [c25]Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. NATW 2016: 28-33 - 2015
- [j30]Giulio Torrente, Jean Coignus
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55(9-10): 1417-1421 (2015) - [c24]Gaspard Hiblot
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. ESSDERC 2015: 242-245 - [c23]Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC 2015: 246-249 - [c22]Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo
Low-frequency noise in bare SOI wafers: Experiments and model. ESSDERC 2015: 286-289 - [c21]Sarra Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. IRPS 2015: 1 - [c20]Christoforos G. Theodorou
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS 2015: 1 - [c19]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - [c18]Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo
On the impact of OxRAM-based synapses variability on convolutional neural networks performance. NANOARCH 2015: 193-198 - [c17]Gaspard Hiblot
Impact of short-channel effects on velocity overshoot in MOSFET. NEWCAS 2015: 1-4 - 2014
- [j29]Omar Jonani Franco Piliado, Giancarlo Castaneda, Andre Juge, Gérard Ghibaudo
Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. J. Low Power Electron. 10(1): 127-136 (2014) - [c16]Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC 2014: 94-97 - [c15]Eleftherios G. Ioannidis
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC 2014: 214-217 - [c14]Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC 2014: 254-257 - [c13]Gaspard Hiblot
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. ESSDERC 2014: 286-289 - 2013
- [c12]Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo:
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC 2013: 198-201 - [c11]Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC 2013: 300-303 - [c10]Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, Bertrand Pelloux-Prayer, Shishir Kumar, Philippe Flatresse, Christophe Lecocq, Gérard Ghibaudo:
Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI. ISCAS 2013: 1452-1455 - 2012
- [j28]Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo:
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47(5): 1075-1083 (2012) - [c9]Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold:
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC 2012: 73-76 - [c8]Min-Kyu Joo, Un Jeong Kim, Dae-Young Jeon, So Jeong Park, Mireille Mouis, Gyu-Tae Kim, Gérard Ghibaudo:
Static and low frequency noise characterization of densely packed CNT-TFTs. ESSDERC 2012: 129-132 - [c7]Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo
New parameter extraction method based on split C-V for FDSOI MOSFETs. ESSDERC 2012: 217-220 - [c6]Christoforos G. Theodorou
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC 2012: 334-337 - [c5]Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. ICECS 2012: 953-956 - [c4]Joris Lacord, Perrine Batude, Gérard Ghibaudo, Frédéric Boeuf:
Analytical modeling of parasitics in monolithically integrated 3D inverters. ICICDT 2012: 1-4 - 2010
- [j27]L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent:
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. 50(9-11): 1259-1262 (2010)
2000 – 2009
- 2009
- [c3]Emanuela Buccafurri, Abdelkrim Medjahdi, Françis Calmon, Raphael Clerc
Challenges and prospects of RF oscillators using silicon resonant tunneling diodes. ESSCIRC 2009: 220-223 - [c2]L. Gerrer, Gérard Ghibaudo, G. Ribes:
Oxide Soft Breakdown : From device modeling to small circuit simulation. ESSCIRC 2009: 368-371 - 2008
- [j26]Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48(8-9): 1198-1201 (2008) - [j25]Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo:
Impact of silicon nitride CESL on NLDEMOS transistor reliability. Microelectron. Reliab. 48(8-9): 1539-1543 (2008) - 2007
- [j24]Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin:
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. 47(4-5): 489-496 (2007) - [j23]Charles Leroux, Gérard Ghibaudo, Gilles Reimbold:
Accurate determination of flat band voltage in advanced MOS structure. Microelectron. Reliab. 47(4-5): 660-664 (2007) - [j22]Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo:
Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectron. Reliab. 47(4-5): 743-747 (2007) - 2005
- [j21]G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45(5-6): 841-844 (2005) - [j20]D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectron. Reliab. 45(5-6): 849-852 (2005) - [j19]Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectron. Reliab. 45(5-6): 925-928 (2005) - [j18]G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j17]Gérard Ghibaudo, E. Vincent:
Guest Editorial. Microelectron. Reliab. 43(8): 1173 (2003) - [j16]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j15]M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectron. Reliab. 43(9-11): 1433-1438 (2003) - [j14]François Lime
Charge trapping in SiO2/HfO2/TiN gate stack. Microelectron. Reliab. 43(9-11): 1445-1448 (2003) - 2002
- [j13]M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. Microelectron. Reliab. 42(1): 41-46 (2002) - [j12]Gérard Ghibaudo, T. Boutchacha:
Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectron. Reliab. 42(4-5): 573-582 (2002) - [j11]B. Cretu
Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. 42(9-11): 1405-1408 (2002) - [j10]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42(9-11): 1505-1508 (2002) - 2001
- [j9]Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectron. Reliab. 41(6): 855-860 (2001) - [j8]P. O'Sullivan, Raphael Clerc
Direct tunnelling models for circuit simulation. Microelectron. Reliab. 41(7): 951-957 (2001) - [j7]Raphael Clerc
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectron. Reliab. 41(7): 1027-1030 (2001) - [j6]Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41(7): 1031-1034 (2001) - [j5]Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. 41(7): 1035-1039 (2001) - [j4]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41(9-10): 1295-1300 (2001) - [j3]M. Fadlallah, Arkadiusz Szewczyk
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectron. Reliab. 41(9-10): 1361-1366 (2001) - [j2]S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41(9-10): 1367-1372 (2001) - [j1]François Lime
Stress induced leakage current at low field in ultra thin oxides. Microelectron. Reliab. 41(9-10): 1421-1425 (2001) - 2000
- [c1]M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter:
Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. ICECS 2000: 940-943
Coauthor Index
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