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Francesco Maria Puglisi

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2020 – today

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2024
[j7]
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Davide Florini, Daniela Gandolfi, Jonathan Mapelli, Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi:
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules. IEEE Trans. Neural Networks Learn. Syst. 35(4): 5117-5129 (2024)
2023
[j6]
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Nicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam:
Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges. Proc. IEEE 111(2): 158-184 (2023)
[c24]
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Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi:
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging. IRPS 2023: 1-6
[c23]
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Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi:
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs. IRPS 2023: 1-6
2022
[j5]
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  - journals/neuromorphic/Begon-LoursHSPP22
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Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein:
Effect of cycling on ultra-thin HfZrO₄, ferroelectric synaptic weights. Neuromorph. Comput. Eng. 2(2): 24001 (2022)
[c22]
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Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi:
Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model. ESSDERC 2022: 316-319
[c21]
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Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi:
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide. ESSDERC 2022: 368-371
[c20]
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Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi:
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena. IRPS 2022: 1-6
[c19]
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Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi:
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions. IRPS 2022: 6-1
[i1]
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  - journals/corr/abs-2205-09388
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Raffaele De Rose, Tommaso Zanotti, Francesco Maria Puglisi, Felice Crupi, Paolo Pavan, Marco Lanuzza:
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing. CoRR abs/2205.09388 (2022)
2021
[j4]
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  - journals/tcasI/PuglisiZP21
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Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan:
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories. IEEE Trans. Circuits Syst. I Regul. Pap. 68(11): 4433-4443 (2021)
[c18]
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Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan:
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories. IRPS 2021: 1-6
2020
[j3]
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Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan:
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices. IEEE J. Emerg. Sel. Topics Circuits Syst. 10(4): 478-487 (2020)
[c17]
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Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan:
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations. AICAS 2020: 31-35
[c16]
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  - conf/irps/ZagniCPPMMZV20
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Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi:
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS 2020: 1-5
[c15]
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Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan:
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise. IRPS 2020: 1-5

2010 – 2019

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2019
[c14]
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  - conf/essderc/PuglisiZP19
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Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan:
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model. ESSDERC 2019: 130-133
2018
[c13]
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Francesco Maria Puglisi, Lorenzo Pacchioni, Nicolo Zagni, Paolo Pavan:
Energy-Efficient Logic-in-Memory I-bit Full Adder Enabled by a Physics-Based RRAM Compact Model. ESSDERC 2018: 50-53
2017
[c12]
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Francesco Maria Puglisi, Nicolo Zagni, Luca Larcher, Paolo Pavan:
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design. ESSDERC 2017: 204-207
[c11]
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Francesco Maria Puglisi:
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories. NVMTS 2017: 1-5
[c10]
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Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan:
Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective. PATMOS 2017: 1-5
2016
[j2]
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  - journals/esticas/PuglisiLPP16
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Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan:
Bipolar Resistive RAM Based on HfO₂: Physics, Compact Modeling, and Variability Control. IEEE J. Emerg. Sel. Topics Circuits Syst. 6(2): 171-184 (2016)
[j1]
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  - journals/tim/PuglisiP16
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Francesco Maria Puglisi, Paolo Pavan:
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices. IEEE Trans. Instrum. Meas. 65(6): 1435-1442 (2016)
[c9]
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Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan:
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC 2016: 252-255
[c8]
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  - conf/patmos/LarcherPPVP16
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Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan:
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS 2016: 128-132
[c7]
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Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan:
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS 2016: 296-300
2015
[c6]
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Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan:
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. ESSDERC 2015: 270-273
[c5]
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Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher:
A microscopic physical description of RTN current fluctuations in HfOx RRAM. IRPS 2015: 5
2014
[c4]
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Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani:
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. ESSDERC 2014: 246-249
2013
[c3]
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  - conf/essderc/PuglisiPPL13
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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher:
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. ESSDERC 2013: 166-169
[c2]
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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher:
A compact model of hafnium-oxide-based resistive random access memory. ICICDT 2013: 85-88
2012
[c1]
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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker:
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC 2012: 274-277

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