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CN1534803A - 具有发光变换元件的发光半导体器件 - Google Patents

具有发光变换元件的发光半导体器件 Download PDF

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Publication number
CN1534803A
CN1534803A CNA2003101181792A CN200310118179A CN1534803A CN 1534803 A CN1534803 A CN 1534803A CN A2003101181792 A CNA2003101181792 A CN A2003101181792A CN 200310118179 A CN200310118179 A CN 200310118179A CN 1534803 A CN1534803 A CN 1534803A
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China
Prior art keywords
semiconductor device
luminous
ray
semiconductor body
emission
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Granted
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CNA2003101181792A
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CN1534803B (zh
Inventor
U
U·雷
K·赫恩
N·斯塔施
G·韦特
P·施洛特
R·施米特
ε
J·施奈德
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Ams Osram International GmbH
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Siemens AG
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Priority claimed from DE19625622A external-priority patent/DE19625622A1/de
Priority claimed from DE19638667A external-priority patent/DE19638667C2/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of CN1534803A publication Critical patent/CN1534803A/zh
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Publication of CN1534803B publication Critical patent/CN1534803B/zh
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Abstract

发光半导体元件，具有发射射线的半导体主体(1)和一个发光变换元件(4，5)。半导体本体(1)发射光谱段在紫外、蓝和/或绿段的射线，发光变换元件(4，5)将这种射线的一部分变换成波长较长的射线。从而能够通过一个单个的发光半导体主体，将原来发射混合色的发光二极管制成专门发射白光的发光二极管。特别推荐将YAG:Ce作为发光变换染料之用。

Description

具有发光变换元件的发光半导体器件
本发明涉及按照权利要求1前序部分的发光半导体器件。
这种类型的半导体器件，例如从公开文件的DE 38 04 293中有所了解。文中介绍了一种电激发光二极管或激光二极管的结构。在此结构中，通过一个掺有发荧光的变光有机染料的塑料元件将二极管发射的全部发射光谱向波长较大的方向推移。通过这种措施，使这种结构发射出另一种不同于发光二极管发射的颜色的光。通过在塑料中掺入不同种类的染料，用同一种发光二极管就可以制成发射不同颜色的光的发光二极管结构。
在DE-OS 2 347 289中发表了一种红外(IR)固体灯，其中，在一个IR二极管的边沿上涂布荧光剂，从而使该处所发射的IR射线转变成可见光。采用这种措施的目的在于，为了控制的目的，在尽可能小地降低二极管发射的IR射线强度的同时，将其中尽可能小的一部分射线转换成可见光。
另外，在EP 486 052中发表了一种发光二极管，其中，在基片与一层有源电激发光层之间至少设置一层半导体光激发光层，将来自该有源层朝向基片发射的第一波长段的光变换成第二波长段的光，从而使该发光二极管总共发射各种不同波长段的光。
在发光二极管的许多有发展前途的应用范围中，例如在Kfz仪表盘上的显示元件，飞机和汽车的内部照明，以及在能够发射全色光的发光二极管显示器中，都对发光二极管提出严格的要求，使其能够产生混合光，特别是白光。
在JP-07 176 794-A中介绍了一种发射白光的平面光源，在其中的一块透明板的前端设置两个发射蓝光的发光二极管，向透明板的内部发射光。在透明板两个相向对面设置的两块主表面中的一个表面上涂有发光物质的涂层，当其受到二极管的蓝光激发之后便会发光。发光物质发射的光的波长与二极管所发射的蓝光的波长有所不同。采用这种已知结构的元件却难以采用这种方式涂布能以使光源发射均匀白光的荧光物质。除此以外，在大批量生产中的可再现性已经成为大问题，因为只要荧光层的厚度略有参差不齐，例如出于透明板表面不平的原因，就会导致发射光的白色色调发生变化。
按照本发明的基本任务是：给出一种按照在开头所述方式的半导体器件，能够均匀发射混合色，既能采用简单工艺方法进行大批量生产，又能在最大程度上保证器件的可再现性特征。
按照权利要求1中的半导体器件就能够完成这项任务。按照本发明的其他有利结构如从属权利要求2至27中所列。在从属权利要求28至30中给出了按照本发明的半导体器件优先选用的用途。
按照本发明的规定具有的发光半导体主体是一种多层结构，特别是由一种用GaxIn1-xN或者GaxAl1-xN制成的有源半导体多层结构，在半导体器件工作时，发射一种由紫外、蓝和/或绿光谱段构成的第一波长段的电磁射线。发光变换元件将来自第一波长段的一部分射线按照下列方式变换为一种第二波长段的射线，也就是由半导体器件发射混合射线、特别是由第一波长段的射线和第二波长段的射线构成的混合色光。这就是说，例如发光变换元件是从半导体主体发射的射线中仅只优先选取第一波长段中的一个光谱段进行选择吸收，然后在波长较长的波段(在第二波长段中)进行发射。优先选择的是在半导体主体发射的波长为λ≤520nm射线中的一个相对的强度最大值，而由发光变换元件选择吸收的光谱中的波长段则是处于这个强度最大值以外。
采用按照本发明的另一个优点是，能够将若干(一个或多个)来自第一波长段的第一光谱段变换成多个第二波长段。从而还可能产生多重色混合和色温的优点。
按照本发明的半导体器件具有的特别优点是通过发光变换产生的波长光谱以及由此发射的光色不受流过半导体主体的工作电流大小的约制。当半导体器件的环境温度发生变化的时候，以及由此造成众所周知的工作电流强度产生剧烈变化的时候，这个优点就会具有特别重大的意义。特别是一种以GaN为基的半导体主体的发光二极管在这方面甚为敏感。
除此以外，按照本发明的半导体器件只能需要一个单独的控制电压，因而也只能需要一个单独的控制电压配置，于是使半导体器件的控制线路所需的设置费用停留在很小的程度。
在按照本发明的特别优先选用的结构形式中，在半导体主体的上方或上面设置了一种部分透明的发光变换层，也就是供发射射线的半导体主体发射射线之用的部分透明的发光变换层。为了保证发射的光肯定能够有统一的颜色，优先选用的是将发光变换层做成具有这样的恒定透射路径的结构，这样就具有特别好的优点，使半导体主体发射的所有发射方向的光穿过发光变换层的路径长度几乎恒定。只有在半导体器件在所有的方向上发射的光都是同样的光的时候方才能够达到这样的要求。一种按照改进结构的、按照本发明的半导体器件的另一个特别好的优点在于，采用简单的方法就能达到高度的再现性，这对于一种有效率的大批量生产来说具有重要意义。可以作为发光变换层之用的是，例如掺有荧光剂的清漆层或者树脂层。
按照本发明的另一种优先选用的结构形式是用部分透明发光变换包壳做的发光变换元件，这种包壳至少包住半导体主体的一部分(有时候还包住导电引线的一部分)，并且同时作为结构包壳(外壳)使用。按照这种结构形式的一种半导体器件的优点主要在于，在进行这种制造时能够因袭使用制造发光二极管(例如径向发光二极管)所惯用的生产线。包壳的结构构件是用发光变换包壳的材料取代普通二极管所用的透明塑料。
采用按照本发明的半导体器件的其他有利结构形式以及上述两个优先选用的结构形式时，发光变换层或者发光变换包壳是用一种至少掺有一种荧光剂的透明材料，例如塑料，优先选用是环氧树脂(优先选用的塑料和荧光剂见以下所述)。采用这种方法时，以采用发光变换元件的制造成本最为经济。为此所用的制造工序与发光二极管的生产线相比不会另加大笔费用。
采用本发明的或者上述结构形式的特别优先选用的改进结构预先需要考虑的是，本波长段或者第二波长段的波长要远远大于第一波长段的波长。
特别要考虑的是，第一波长段的一个第二光谱段和一个第二波长段之间要彼此互补。采用这样的办法，可以从一个统一的有色光源，特别是从一个统一发蓝光的半导体主体产生混合光，特别是白光。例如为了使发蓝光的半导体主体产生白光，要将从半导体主体发射的兰色光谱段中的射线的一部分变换成兰色的补偿色的黄色光谱段。借此通过选用合适的发光变换元件、特别是通过选用合适的荧光剂、荧光剂的粒度、浓度，来改变白光的色温或者色位。除此以外，这种结构还有利于提供一种可能性，即采用混合荧光剂的可能性，从而能够有利于将色调调整到非常精确的程度。纵然如此，例如出于荧光剂不均匀分布的原因，仍然会使发光变换元件发生不均匀发射。通过上述措施，能够有利于对于光线穿过发光变换元件路径的不同长短进行补偿。
通过按照本发明优先选用的半导体器件的结构形式，要使发光变换元件或者构件包壳中的其他构件能以与一种或多种染料适配，而又不会对波长变换产生影响。为此可以使用普通二极管惯用的染料，例如偶氮染料、蒽醌染料或者周萘酮(Perinon)染料。
为了防止发光变换元件受到过高辐射剂量的影响，通过对于半导体器件的有利改造，或者通过上述优先选用的结构形式，至少将半导体主体的一部分表面采用，例如塑料制的透明外壳包住，在其表面上涂布发光变换层，借以减少发光变换元件的放射密度、转而减少其辐射剂量，根据所用材料的不同，对发光变换元件的使用寿命产生良好的影响。
在通过本发明的特别优先选用的措施及其结构形式中，采用一种发射这样射线的半导体主体，即发射的发射光谱的波长在420nm和460nm之间，特别是在430nm处(例如以GaxAl1-xN为基础的半导体主体)，或者在450nm处(例如以GaxIn1-xN为基础的半导体主体)出现一个强度最大值。采用这样的按照本发明的半导体器件，就有利于产生C.I.E.色表中的几乎所有的颜色和混合色。此处发射射线的半导体主体是用如上所列的主要是用电致发光半导体材料，但是也能用一种其他电致发光材料，例如聚合物材料制成。
在本发明的其他特别优先选用的改进结构中以及在其结构形式时，发光变换包壳或发光变换层是用一种清漆或塑料制成的，例如是用一种在光激器件包壳中的硅树脂、热塑性塑料或硬质塑料材料(环氧树脂和丙稀酸树脂)制成的。例如还能用热塑性塑料制成顶盖元件，作为发光变换包壳之用。以上所列的材料能够采用简单的方法掺入一种或多种荧光剂。
当将半导体主体设置在一个缺口中，或在预制好的一个外壳之中，并在缺口处用一个涂有发光变换层的顶盖盖住时，就能特别简单地实现按照本发明的半导体器件。这样的一种半导体器件可以在普通的生产线上大批量制造。对此必须做的仅只是要在该外壳之中安装完半导体主体之后再在外壳上装设，例如用清漆层或铸模树脂层做的覆盖元件，或者盖上用热塑性塑料做的预制盖板。也可以改用透明材料的外壳缺口，例如用透明塑料封填，这样特别不会改变来自半导体主体发射的光线的波长；如果愿意，还可以预先做成发光变换结构。
出于特别容易实现的原因，特别优先选用的按照本发明的半导体器件的改进结构是将半导体主体设置在一个预制的或者业已装好引线框的外壳中，并且将外壳用至少部分透明的铸模树脂填满，在浇注缺口之前，预先掺入荧光剂。由于使用掺有荧光剂的浇注料来浇注半导体主体，就等于设置了发光变换元件。
为制造发光变换元件特别优先选用的材料是掺有一种或多种荧光剂的环氧树脂。也可以采用聚甲基丙烯酸甲酯(PMMA)取代环氧树脂。
可以通过简单的方式在PMMA中掺入有机染料。要想制造发射绿色、黄色和红色的，按照本发明的半导体器件可以使用，例如以周萘烯(Perylen)为基的染料分子。还可以通过掺入4价金属有机化合物的方法来制造发射UV、可见光或红外光的半导体器件。特别是通过掺入Eu3+为基的金属有机螯合物(λ≈620nm)能够实现发射红光的、按照本发明的半导体器件。发射红光的、按照本发明的、特别是发射蓝光的半导体主体的半导体器件能够通过掺入4价蓝宝石的螯合物、或掺入预先掺有Ti+3的蓝宝石进行混合的方法制造。
采用这样的一种方式有利于制造发射白色光的按照本发明的半导体主体，即通过适当选用荧光剂将由半导体主体发射的兰光变换成补偿色的波段，特别是兰色及黄色波段或者变换成叠加三色光，例如蓝、绿、和红光。这样就能通过荧光剂产生黄光，或者产生绿光和红光。由此产生的白色色调(CIE-色表中的色调)能够通过适当选用混合用的染料及其浓度加以改变。
适合于做发射白光的、按照本发明的半导体器件用的荧光剂是，例如发绿光用的BASF Lumogen F 083、发黄光用的BASF Lumogen F 240、发红光用的BASF Lumogen F 300一类的周萘烯荧光剂。这些荧光剂可以采用简单的方式掺入，例如透明树脂中。
一种利用发蓝光的半导体主体来制造发绿光的半导体器件的优先选用的方法是用硼硅酸盐玻璃置换发光变换元件中的UO2 ++。
采用对于按照本发明的半导体器件以及对于上述有利的结构形式的结构进行改进的另一个优先选用的改进结构是在发光变换元件或者结构包壳的其他透射组件中另外掺入称之为扩散剂的光散射颗粒。通过这种办法能够有利于使半导体器件的着色性以及发射性达到最佳化。
按照本发明的半导体器件的一种特别有利的结构形式在于在发光变换元件的至少一部分透明环氧树脂中掺入一种无机荧光剂。最有利的方法也就是采用简单方法使无机荧光剂与环氧树脂形成化合物。一种特别优先选用的、用来制造发白光的半导体器件的无机荧光剂是磷YAG:Ce(Y3Al5O12:Ce3+)。这种荧光剂能够采用特别简单的方法与在LED工艺中惯用的透明环氧树脂相混合。其他可以考虑作为荧光剂用的有掺杂稀土元素的石榴石，如Y3Ga5O12:Ce3+、Y(Al，Ga)5O12:Ce3+、Y(Al，Ga)5O12:Tb3+以及掺有稀土元素的碱土金属的硫化物如SrS:Ce3+，Na，SrS:Ce3+，Cl，SrS:CeCl3，CaS:Ce3+和SrSe:Ce3+。
此外，掺有稀土元素的硫代没食子酸盐，例如CaGa2S4:Ce3+，SrGa2S4:Ce3+特别适合于生成不同类型的混合色光。也可以考虑使用掺有稀土元素的铝酸盐，例如YAlO3:Ce3+，YGaO3:Ce3+，Y(Al，Ga)O3:Ce3+以及掺有稀土元素的正硅酸盐M2SiO5:Ce3+(M:Sc，Y，Sc)例如Y2SiO5Ce3+。所有钇的化合物原则上都可以用钪或镧替代。
另外一个可用的按照本发明的半导体器件的结构形式是至少采用纯无机材料制成的包壳的发光组件，也就是说，是采用纯无机材料制成的发光变换包壳或发光变换层。因此，发光变换元件是用一种在对温度稳定的透明或部分透明的材料中掺入无机荧光剂制成的。特别是用一种有利的方法在低熔融温度的无机玻璃(例如硅玻璃)中掺入一种无机磷制成的。制造这样的发光变换层的一种优先选用的方法是Sol-Gel-技术，采用这种工艺是将整个发光变换层，不仅是无机荧光剂还有所掺的材料都可以在一道工序中进行。
为了改善由半导体主体发射的第一波长段的射线与经过发光变换的第二波长段的射线的混合，以及发射光的色均匀性，要在按照本发明的半导体器件中采用有利措施，在发光包壳或发光变换层中和/或结构包壳的其他元件中另外掺入一种发蓝光的染料，借以降低由半导体主体发射射线的所称的取向特征。取向特征是指使半导体主体发射的射线呈现一种优先选用的发射方向。
在按照本发明半导体器件的一个优先选用的一种措施中，采用有机荧光剂粉末来达到上述目的，此时的荧光剂不会在其周围的材料(基底)中溶解。另外，有机荧光剂与其周围的材料的折射指数互不相同。这样就增加了一个有利之处，即未被荧光剂吸收的光的部分不会受荧光剂粒度的约制而产生散射。这样就会大大降低半导体主体发射射线的取向特征，从而使未被吸收的射线和经过发光变换的射线得以均匀混合，结果导致产生三维均匀色压。
由于制造发光变换包壳或发光变换层所用的环氧树脂与无机荧光剂(Y3Al5O12:Ce3+)互相混合，所以一种发射白光的、按照本发明的半导体器件能以特别优选的方式实现。由半导体主体发射的兰色射线的一部分被无机荧光剂移位至黄色的光谱段，因而被推移到与兰色互补的波长段。通过适当选择染料的混合浓度，可以改变白色光的色调(在CIE色表中的色位)。
无机荧光剂YAG:Ce还有另外的一个优点，即可以由此而成为一种折射指数在1.84左右的不溶性颜料(粒度在10μm以内)。这样除了波长发生变换之外还会产生一种散射效应，结果导致使发射蓝光的二极管的射线和经过变换发射的黄光进行良好的混合。
在另一个按照本发明的半导体器件的优先选用的改进结构中，以及上述有利的制造形式中，向发光变换元件或结构包壳的其他的一个透过射线的构件另外增加掺有称为扩散剂的光散射颗粒。采用这样的办法，有利于色压和半导体器件发射性能的进一步最佳化。
特好的优点在于，按照本发明发射白光的半导体器件及其上述结构形式的、主要以GaN为基制成的发蓝光的半导体主体的发光效率与一个白灼灯泡的发光效率有可比性。其原因在于，这种半导体主体的外部量子输出量只有百分之几，而另一方面有机染料分子的发光效率却经常在90％以上。除此以外，按照本发明的半导体器件与白灼灯泡相比，其使用寿命特长，非常结实，工作电压较小。
另外的有利之处在于，由于肉眼的灵敏度随着波长的增大而增高，所以人眼对于按照本发明的半导体器件亮度的分辨能力与对于未装发光变换元件的相比，纵然同样都装有半导体器件，但对于前者却能够明显提高。
另外，按照本发明原理的有利之处还在于当一个半导体主体除了发射紫外射线以外还可改成发射可见光。因此会使半导体主体发射的光的亮度明显提高。
此处所说通过发光变换使半导体主体发射蓝光的概念还可以有利于利用多级发光变换元件按照紫外→蓝→绿→黄→红的顺序加以扩展。此时，要在半导体主体后面按照先后顺序设置对多种光谱选择发射的发光变换元件。
还可以采用有利的方式将多种不同的光谱选择发射的染料分子一并掺入发光变换元件的透明塑料之中。这样就能够产生很宽的色光谱。
专门使用YAG:Ce作发光变换染料的、按照本发明发射白光的半导体器件的特殊优点在于，这种荧光剂受到蓝光激发会在光谱的吸收和发射之间产生大约100nm的推移。这会导致大大降低对于荧光剂所发射的光的反吸收，结果导致发光效率的提高。另外，YAG:Ce具有有利的热和光化学的(例如UV-的)高稳定性(主要是高于有机荧光剂)，所以适合于制造在户外和在高温段使用的发白光的二极管。
迄今为止，YAG:Ce在反吸收、光效率、光化学稳定性以及制造加工方面显然是一种最适用的荧光剂。并且据认为还可以用于在掺有Ce的磷、特别是掺有Ce的石榴石中使用。
按照本发明特别有利的是在于特别适合于全色LED显示的功率消耗小、适合于在Kfz车内或飞机舱内照明、以及在Kfz仪表盘等的显示装置或者液晶显示的照明中使用。
按照本发明的其他特征、优点和实用性参见以下9个实施例结合图1至14的说明。
图1是按照本发明的半导体器件第一实施例的示意剖面图；
图2是按照本发明的半导体器件第二实施例的示意剖面图；
图3是按照本发明的半导体器件第三实施例的示意剖面图；
图4是按照本发明的半导体器件第四实施例的示意剖面图；
图5是按照本发明的半导体器件第五实施例的示意剖面图；
图6是按照本发明的半导体器件第六实施例的示意剖面图；
图7是具有以GaN为基的一个多层结构的一个发射蓝光的半导体主体的发射光谱示意图；
图8是按照本发明的两个发射白光的半导体器件的发射光谱示意图；
图9是发射蓝光的半导体主体的剖面示意图；
图10是按照本发明的半导体器件第七实施例的示意剖面图；
图11是发射混合红光的按照本发明的半导体器件的发射光谱示意图；
图12是发射白光的按照本发明其他的半导体器件的发射光谱示意图；
图13是按照本发明的半导体器件第八实施例的示意剖面图；
图14是按照本发明的半导体器件第九实施例的示意剖面图。
在各图中的同样或起同样作用的部分都标以同样的标号。
图1所示的发光半导体器件具有一个半导体主体1、一个背面接触件11、一个正面接触件12和一个由不同的叠层叠置成的多层结构7，其中还有一个在半导体器件工作状态中发射至少一种射线(例如紫外、蓝或绿)的有源区。
图9所示是适合于作为这种元件以及所有在以后介绍的实施例中的元件的一种多层结构7的示例。图中，在用SiC制成的基片18上设置一层涂有AlN-或者GaN-层19、一层n-导通的GaN-层20、一层n-导通的GaxAl1-xN-或者GaxIn1-xN-层21、一个另外的n-导通的GaN-或者一层GaxIn1-xN-层22、一层p-导通的GaxAl1-xN-层或者GaxIn1-xN-层23和一层p-导通的GaN-层24的多层结构。在GaN-层24的一个主表面25上，以及在基片18的一个主表面26上分别设置一个金属接触件27，28，这是采用在惯用的发光半导体技术的导电接触件中所用的材料制成的。
也可以采用根据其他技术人员认为是适合的其他半导体主体作为按照本发明的半导体器件使用。这同样适用于以下所述所有的实施例。
在图1的实施例中，半导体主体采用一种导电粘接剂，例如一种金属焊料或者粘接材料将其底面接触件11固定在第一导电引线2上。正面接触件12采用一条粘结金属丝14与一个第二导电引线3连接。
将半导体主体1未占用的表面和导电引线2及3的一部分线段直接用一种发光变换包壳5包住。这种包壳是优先选用一种在透明发光二极管中使用的掺有荧光剂6的、优先选用掺有有机荧光剂的透明塑料(优先选用是环氧树脂或者也可以用聚甲基丙烯酸甲酯)制成的；发白光的器件优先选用Y3Al5O12:Ce3+(YAG:Ce)掺和。
在图2中所示的一个按照本发明半导体构件的实施例与图1的不同之处在于，半导体主体1和导电引线2及3的部分线段不是用一种发光变换材料、而是用一种透明包壳15包住。这种包壳不会使半导体主体1发射的射线波长发生变化；是用一种，例如在发光二极管工艺中惯用的环氧树脂、或丙烯酸酯树脂、或另一种能够透光的材料，例如无机玻璃制成的。
在这种透明的包壳15上涂布一层发光变换层4，如图2所示，将包壳15的整个表面包住，也可以用发光变换层4仅只包住这个表面的一部分。发光变换层4仍然是用，例如由一种掺有荧光剂6的透明塑料(例如环氧树脂，清漆或甲基丙烯酸甲酯)制成的。这样发白光的半导体器件也是优先选用YAG:Ce作为荧光剂。
这个实施例特有的优点在于，由半导体主体发射的射线穿过发光变换元件的路径长度大体相等。正像经常发生的那样，当由半导体器件发射的光的精确色调要取决于该路径的长度时，这个长度就会起到特别重要的作用。
为了改善图2中的发光变换层4所发出的光的输出耦合，可以在该器件的一个侧面上设置一个透镜状的覆盖体29(用虚线表示)，用来衰减发射光在发光变换层4内部的全反射。这个透镜状的覆盖体29可以用透明塑料或玻璃制造，然后，例如粘结在发光变换层4上，或者直接制成作为发光变换层4的构件的整体结构。
在图3所示的实施例中，第一和第二引线2、3是预埋在透光的或者预制的、开出一个缺口9的基座8中。所谓“预制”是指，在将半导体主体安装在引线2上之前采用，例如注塑法预先将底座8连接在引线2，3上形成的成品结构。底座8是，例如由一种透光的塑料制成的，缺口9是按照其形状作成在半导体主体工作期间用来反射所发射的射线之用的反射镜(有时候通过缺口9内壁上的合适涂层)。这样的底座8是作为对于安装在其上面的发光二极管的导电板之用的。在安装半导体主体之前是采用，例如注塑法将底座装设在导电引线2、3的导电带(引线框)上。
缺口9是用与一层发光变换层4分开单独单独制造、并且固定在底座8上的塑料制的盖板17盖住。适合做发光变换层4的材料仍然是在以上说明的通论部分中的所列的、掺有在该文中所列有关荧光剂的塑料或无机玻璃。该缺口9既可以用一种塑料、用一种无机玻璃或者用气体充填，也可以抽成真空。
正像图2中的实施例那样，为了改善来自发光变换层4的光耦合，此处也可以在其上方设置一个透镜状的覆盖体29(用虚线表示)，用来衰减在发光变换层4发射的光的全反射。这种覆盖体可以用透明塑料制造，粘在，例如发光变换层4的上面，或者和发光变换层4共同作成一个整体结构。
如图10所示，在一种特别优先选用的制造形式中，缺口9用一种含有荧光剂的环氧树脂、也就是说是用一种发光包壳5充填，形成发光变换元件的结构。在此情况下就可以省却一个盖板17和/或一个透镜状的覆盖体29。此外，还有如图13所示的另一种办法，例如将第一导电引线2通过冲压在半导体主体1的范围以内作成一个反光镜34的结构，中间用一种发光变换包壳5充填。
图4所示是一种称为径向二极管的另一种制造方法的示例。图中，半导体主体1是通过，例如焊接或粘结的方法，固定在用第一导电引线2作成的一种反光镜结构部件16之中。这种外壳形状的结构是在发光二极管工艺中惯用的形状，所以在此处不再作详细说明。
在图4的实施例中的半导体主体1是用一种透明包壳15包住，正如在上述第二实施例(图2)所示，不会使半导体主体1发射的射线的波长发生变化，可以采用，例如在发光二极管工艺中惯用的透明环氧树脂或玻璃制造。
在这种透明的包壳15上面涂布一层发光变换层4。为此所用的材料仍然可以是在以上所述的实施例中采用的塑料或无机玻璃，再加上在该处所列的有关染料。
由半导体主体1、一部分导电引线2，3、透明包壳15和发光变换层4构成的整个结构直接用另一种透明包壳10包住。不会使透过发光变换层4发射的射线的波长发生变化。这种包壳仍然是，例如采用在发光二极管工艺中惯用的透明环氧树脂或者无机玻璃制成的。
图5所示的实施例与图4中的主要不同之处在于，半导体主体1的未占用表面直接用一个发光变换包壳5包住，然后再用另一种透明包壳10包住。在图5中，还作为示例绘出一个半导体主体1，其中不用下沿作接触件、而是改用半导体多层结构7的另一个接触面作接触件，后者利用一条第二连接金属线14与其所属的导电引线2或3连接。不言而喻，也可以用本文介绍的其他实施例取代这样的半导体主体1。反之，当然也可以将图5中的实施例在前述实施例中使用。
还要在此处对于这种不言而喻的情况加以解释，也可以将图5所用的结构形状比拟图1实施例的办法制成一个整体发光变换包壳5，从而取代将发光变换包壳5与另一个透明包壳10结合使用的办法。
在图6的实施例中，直接在半导体主体1上涂布一层发光变换层4(可用以上所列的材料)。该半导体主体1和一部分导电引线2，3用另一种透明包壳10包住，不会使透过发光变换层4发射的射线的波长发生变化。这种包壳仍然是，例如采用在发光二极管工艺中惯用的透明环氧树脂或者无机玻璃制成的。
像这样具有一层发光变换层4、但没有包壳的半导体主体1当然还有利于完全采用在半导体工艺中惯用的外壳形状(例如SMD外壳、径向外壳(请参阅图5))。
在图14中所示的实施例是按照本发明的一个半导体器件，在半导体主体1上设置一个透明的槽形部件35，这就是在半导体主体1外面的一个包槽36。槽状部件35，例如是用透明环氧树脂或者无机玻璃制成的，并且，例如采用注塑法，将导电引线2，3连同半导体主体1包封在一起制成的。在这样的包槽36中，包含涂有一层仍然是用环氧树脂或无机玻璃制成的发光变换层4，其中掺有以上所列的无机荧光剂颗粒37。采用这种结构的有利条件在于，能以保证结构非常简单，在半导体器件的制造过程中荧光剂不会聚集在预先未曾考虑到的，例如在半导体主体附近的部位。槽状部件35当然也可以另行单独制造，也可以改用，例如罩在半导体主体1上的办法固定在一个外壳构件上。
在所有以上介绍的实施例中，为了使颜色介入发射光的程度达到最佳化，为了使其与发光变换元件(发光变换包壳5或发光变换层4)相适配，有时要在透明包壳15、和/或透明包壳10中掺入光散射颗粒，最为有利的是掺入扩散剂。作为这样的扩散剂的示例是矿物性的填充剂，特别是CaF2、TiO2、SiO2、CaCO3或BaSO4，或者也可以用有机颜料。这些物料可以采用简单的方法掺入上述的塑料之中。
图7、8和12所示是半导体主体发射的一种蓝光的发射光谱(图7)(发光最大值在λ~430nm)或者采用一种这样的半导体主体制成的发白光的、按照本发明的半导体器件(图8及图12)的发射光谱。在横坐标上分别以nm为单位标注波长λ；在纵坐标上分别标注一种相对的电致发光(EL)强度。
图7所示由半导体主体发射的射线仅只有一部分被变换成为波长较长的波长段，从而产生混合色的白光。在图8中以虚线表示的曲线30是按照本发明的一种半导体器件的发射光谱，这种射线是由两种辅助波长段(蓝和黄)形成的，总体发射的是白光。图中的光谱在大约400和430nm之间(蓝)以及在大约550和580nm之间(黄)分别出现一个最大值。整条曲线31表示一个按照按照本发明的半导体器件的发射光谱，白色是由三种波长段(由蓝、绿、红构成的叠加三色)混合而成的。图中的发射光谱例如在430nm左右(蓝)、500nm左右(绿)和615nm左右(红)处分别有一个最大值。
另外在图11中示出发射由蓝光(一种波长的最大值在大约470nm)和红光(一种波长的最大值在620nm左右)构成的混合光的按照本发明的半导体器件的发射光谱。发射光对人眼的总色压为品红色。此处由半导体主体发射的发射光谱仍然相当于图7所示。
图12所示是一个发白光的、按照本发明的半导体器件，具备发射图7所示发射光谱的半导体主体，其中所用的荧光剂是YAG:Ce。在半导体主体发射的射线中，只有一小部分被变换成波长较长的波长段，因而产生混合白光。图8中用不同虚线绘制的曲线31至33是表示按照本发明的半导体器件的发射光谱。发光变换元件，其中的发光变换元件是用环氧树脂制成的，含有不同浓度的YAG:Ce。每个发射光谱分别在兰色光谱段的λ＝420nm和λ＝430之间、在绿色光谱段的λ＝520和λ＝545之间出现一个强度最大值，其中含有一个较长波长的强度最大值的发射波段的一大部分都处于黄色光谱段。由图12曲线中明显可见，采用按照本发明的半导体器件只要简单地通过改变环氧树脂中的荧光剂的浓度，就能够改变白光中的CIE-色位。
另外，还可以将掺有Ce的石榴石、硫代没食子酸、碱土金属-硫化物铝酸盐直接涂在半导体主体上，不必将其分散在环氧树脂或玻璃中。
上述无机荧光剂的另外的一个特殊优点在于，荧光剂在例如环氧树脂中的浓度不会像有机荧光剂那样要受溶解度的约制。因而不需要用很厚的发光变换元件。
借助上述实施例对于按照本发明半导体器件的说明当然不会将按照本发明局限在这些实施例上。在示例中是以发光二极管芯片或激光二极管芯片作为半导体主体的示例，还可以理解为，例如是一个发射相应光谱的聚合物LED。

Claims (30)

1.发光半导体器件，包括：
一个半导体主体，其在半导体器件工作时发射电磁射线，所述的半导体主体具有半导体多层结构，其适合于发射来自紫外、蓝和/或绿色的光谱段的第一波长段的电磁辐射；
一个第一引线和一个第二引线，这两个引线分别与半导体主体作导电连接；
一个含有至少一种荧光剂的发光变换元件，所述的发光变换元件将来自第一波长段发射的射线变换成与第一波长段不同的第二波长段的射线，从而使该半导体器件发射由第一波长段的射线和第二波长段的射线形成的混合射线；其中
所述的发光变换元件包括由硅产生的发光变换层和/或发光变换包壳，并且含有从由以下物质构成的组中选择的无机荧光剂：掺有稀土元素的石榴石、掺有稀土元素的碱土金属的硫化物、掺有稀土元素的硫代没食子酸盐、掺有稀土元素的铝酸盐和掺有稀土元素的正硅酸盐。
2.根据权利要求1的半导体器件，其中所述发光变换层和/或发光变换包壳将第一波长段的辐射变换成多个第二波长段的射线，该多个第二波长段具有相互不同的光谱子段，从而使该半导体器件发射由第一波长段的射线和多个第二波长段的射线形成的混合射线。
3.根据权利要求1或2的半导体器件，其中该半导体器件具有一个确定的主发射方向，并且所述的发光变换层和/或发光变换包壳在所述半导体器件的主发射方向上被设置在所述的半导体主体的基本下游。
4.根据权利要求1-3中的至少一个权利要求的半导体器件，其中所述的第二波长段包括至少一部分波长大于第一波长段的波长的部分。
5.根据权利要求1-4中的至少一个权利要求的半导体器件，其中所述半导体主体适合于在半导体器件的工作状态中发射紫外线，并且所述发光变换层和/或发光变换包壳将该紫外线的至少一部分变换成可见光。
6.根据权利要求1-5中的至少一个权利要求的半导体器件，其中在混合射线中的第一波长段和第二波长段至少有一部分位于互补色的光谱区域中，并且第一和第二波长段的射线的混合产生白光。
7.根据权利要求2或者从属于权利要求2的权利要求4-6中的至少一个权利要求的半导体器件，其中由半导体主体发射的第一波长段和两个第二波长段产生叠加三重色，从而使半导体器件在工作期间发射白色光。
8.根据权利要求1-7中的至少一个权利要求的半导体器件，其中所述半导体主体发射的射线在波长λ≤520nm处具有发光强度最大值。
9.根据权利要求1-8中的至少一个权利要求的半导体器件，其中另外包括一个由缺口形成的不透光底座，并且其中所述半导体主体设置在所述底座的所述缺口中，并且所述缺口至少部分地填充有所述的发光变换层和/或发光变换包壳。
10.根据权利要求1-9中的至少一个权利要求的半导体器件，其中所述发光变换元件包括不同波长变换性能的多层叠层。
11.根据权利要求1-10中的至少一个权利要求的半导体器件，其中所述无机荧光剂是从掺杂Ce元素的石榴石组中选择出来的。
12.根据权利要求11的半导体器件，其中所述无机荧光剂是YAG:Ce。
13.根据权利要求1-12中的至少一个权利要求的半导体器件，其中所述无机荧光剂的平均粒度约为10μm。
14.根据权利要求1-13中的至少一个权利要求的半导体器件，其中所述发光变换元件含有从由有机和无机荧光剂构成的组中选择出的多种相互不同的材料。
15.根据权利要求1-14中的至少一个权利要求的半导体器件，其中所述发光变换元件含有从由部分具有以及部分不具有波长变换作用的有机和无机染料分子构成的组中选择出的染料分子。
16.根据权利要求1-15中的至少一个权利要求的半导体器件，其中所述的发光变换元件含有光散射颗粒。
17.根据权利要求1-16中的至少一个权利要求的半导体器件，其中包括具有光散射颗粒的透明包壳。
18.根据权利要求1-17中的至少一个权利要求的半导体器件，其中所述发光变换元件含有一种发蓝光的荧光剂。
19.根据权利要求1-18中的至少一个权利要求的半导体器件，其中包括一种透明包壳，该透明包壳具有一种发蓝光的荧光剂。
20.一个全色LED显示装置，含有多个按照权利要求1-19中的至少一个权利要求的发光半导体器件。
21.多个按照权利要求1-20中的至少一个权利要求的发光半导体器件在飞机舱内部空间照明的应用。
22.与一个显示装置结合，多个按照权利要求1-21中的至少一个权利要求的半导体器件用于照明显示装置的显示。
23.根据权利要求22的结合，其中所述显示装置包括一个液晶显示装置。
24.根据权利要求1-23中的至少一个权利要求的半导体器件，其中所述的发光变换层和/或发光变换包壳被另外一个透明包壳所围绕。
25.根据权利要求1-24中的至少一个权利要求的半导体器件，其中所述半导体主体发射的射线在波长λ≤520nm处具有发光强度最大值。
26.根据权利要求25的半导体器件，其中所述半导体主体发射的射线在420nm和460nm之间的波长处具有发光强度最大值。
27.根据权利要求1-26中的至少一个权利要求的半导体器件，其中所述半导体主体发射的射线在波长λ≤520nm处具有相对强度最大值，并且光谱上可由发光变换元件选择吸收的波长段位于此强度最大值之外。
28.根据权利要求1-27中的至少一个权利要求的半导体器件，其中半导体主体是发射蓝色光的半导体主体，并且通过发光变换层和/或发光变换包壳将半导体主体发射的兰色光谱段中的射线的一部分变换成黄色光谱段。
29.根据权利要求1-27中的至少一个权利要求的半导体器件，其中半导体主体是发射蓝色光的半导体主体，并且通过发光变换层和/或发光变换包壳将半导体主体发射的兰色光谱段中的射线的一部分变换成黄色光谱段。
30.根据权利要求1-29中的至少一个权利要求的半导体器件，其中基于掺杂Ce元素的石榴石、硫代没食子酸盐、碱土金属的硫化物或铝酸盐的无机荧光剂直接用于半导体主体。
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CN105655469A (zh) * 2008-11-13 2016-06-08 行家光电有限公司 用于形成荧光粉转换型发光装置中的薄膜荧光粉层的系统和方法
CN103261369A (zh) * 2010-12-13 2013-08-21 欧司朗光电半导体有限公司 用于制造辐射转换元件的方法、辐射转换元件和包含辐射转换元件的光电子器件
CN104204024A (zh) * 2012-03-27 2014-12-10 住友电木株式会社 光反射用树脂组合物、光半导体元件搭载用基板和光半导体装置
CN103682030A (zh) * 2012-09-07 2014-03-26 深圳市龙岗区横岗光台电子厂 Led 、led装置及led制作工艺
CN103682030B (zh) * 2012-09-07 2017-05-31 深圳市龙岗区横岗光台电子厂 Led、led装置及led制作工艺
CN103236486A (zh) * 2013-04-22 2013-08-07 立达信绿色照明股份有限公司 Led封装方法、封装结构及使用该封装结构的led灯
CN103236486B (zh) * 2013-04-22 2017-04-26 厦门立达信绿色照明集团有限公司 Led封装方法、封装结构及使用该封装结构的led灯

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