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CN101931097B - LiCoO2的沉积 - Google Patents

LiCoO2的沉积 Download PDF

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CN101931097B
CN101931097B CN2010101615170A CN201010161517A CN101931097B CN 101931097 B CN101931097 B CN 101931097B CN 2010101615170 A CN2010101615170 A CN 2010101615170A CN 201010161517 A CN201010161517 A CN 201010161517A CN 101931097 B CN101931097 B CN 101931097B
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licoo
deposition
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battery
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CN101931097A (zh
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张红梅
理查德·E·德马雷
邵梅
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Abstract

本发明提供一种电池结构体和层叠电池结构体，其包含在低温衬底上面沉积的结晶LiCoO2层，其中所述结晶LiCoO2层具有在
Figure DSA00000088783500011
至
Figure DSA00000088783500012
之间的晶粒大小。

Description

LiCoO2的沉积
本申请是PCT国际申请日为2005年12月7日、国家申请号为200580042305.8(原国际申请号PCT/US2005/044781)、发明名称为《LiCoO2的沉积》的申请的分案申请。
相关申请
本发明要求下列临时申请的优先权：2005年2月8日由Hongmei Zhang和Richard E.Demaray提交的临时申请60/651,363；和2004年12月8日由相同的发明人提交的临时申请60/634,818，每一份临时申请的全部内容都通过引用结合在此。
发明背景
技术领域
本发明涉及薄膜固态电池，具体而言，涉及用于电池制造的LiCoO2膜和层的沉积。
相关技术的论述
固态薄膜电池典型地通过将薄膜层叠在衬底上使得所述膜协同产生电压而形成。所述薄膜典型地包含集电极、阴极、阳极和电解质。可以使用包括溅射和电镀的多种沉积方法沉积所述薄膜。适于这种应用的衬底常规上是能够在空气中经受至少一次高达约2小时的至少700℃的高温退火处理，以使LiCoO2膜结晶的高温材料。这种衬底可以是具有合适结构和材料性能的任何适合的材料，例如在LiCoO2的存在下经受后续高温处理的半导体晶片、金属片(例如钛或锆)、陶瓷如氧化铝或其它材料，所述LiCoO2可以在这些温度循环过程中与用于电池的大多数材料经受显著的界面反应。
人们已经将除LiCoO2以外的其它含锂的混合金属氧化物评价为结晶能储存阴极材料，其包含Ni、Nb、Mn、V并且有时还包含Co，而且包含其它过渡金属氧化物。典型地，以非晶态形式沉积所述阴极材料，然后在退火处理中加热所述材料以形成结晶材料。在LiCoO2中，例如，在700℃以上的退火将沉积的非晶膜转变为结晶态。然而，这种高温退火严重限制了可以用作衬底的材料，诱导与含锂阴极材料的破坏性反应，并且通常需要使用昂贵的贵金属如金。这些高热预算的方法(即，长时间周期的高温)与半导体或MEM器件加工不相容，并且限制了衬底材料的选择，增加成本并且降低这些电池的产量。
已知可以实现非晶LiCoO2在贵金属上的结晶。在Kim等中论述了这种结晶的一个实例，其中如x射线衍射数据显示，在贵金属上的LiCoO2非晶层在700℃的20分钟常规炉退火实现了LiCoO2材料的结晶。Kim，Han-Ki和Yoon，Young Soo，″Characteristics of rapid-thermal-annealed LiCoO2，cathodefilm for an all-solid-state thin film microbattery，″J.Vac.Sci.Techn.A 22(4)，2004年7月/8月。在Kim等中，在沉积于高温MgO/Si衬底上的铂膜上沉积LiCoO2膜。在Kim等中表明，这些结晶膜能够构成功能性全固态Li+离子电池的含Li+离子阴极层。
有很多参考文献都公开了一种能够提供LiCoO2膜的离子束辅助方法，所述LiCoO2膜通过小角x射线衍射(XRD)显示出一些可观察到的结晶组成。在美国专利申请09/815,983(公布号US2002/001747)、09/815,621(公布号US 2001/0032666)和09/815,919(公布号US 2002/0001746)中找到了这些膜的一些实例。这些参考文献公开与沉积源并行使用第二前侧离子束或其它离子源以在衬底表面获得离子通量与LiCoO2蒸气通量的交迭区。这些参考文献没有一份公开了在沉积过程中的膜温度数据或膜的其它温度数据以支持低温处理的主张。
很难通过溅射材料层或通过使用离子通量的轰击形成均匀的沉积。使用来自相对于衬底占据不相同的位置和范围的两种源的两种均匀的同步分布，极大地增加在实现均匀的材料沉积中所涉及的困难。这些参考文献没有公开薄膜电池的可靠制造所需的均匀的材料沉积。人们对有利于电池产品的材料均匀性的良好认识的规定是5％的1-∑(one-sigma)的材料均匀性是在薄膜制备中的标准。发现约86％具有这种均匀性的膜对于电池制造是可接受的。
还更困难的是按衬底比例来制造如200mm或300mm的尺度。实际上，在使用溅射沉积以及离子束沉积的上述讨论的参考文献中，只公开了小面积的靶和小面积的衬底。这些参考文献公开了唯一的可行性结果。在这些参考文献中没有公开由两种独立的前侧源(front side source)实现均匀的分布的方法。
此外，常规材料和制造方法可能限制所制造电池的能量密度的容量，从而导致电池越多需要占据越大的体积。特别需要制造具有大的每单位体积储能量的电池以提供低重量和低体积的电池。
因此，需要用于将结晶材料例如LiCoO2材料沉积到衬底上的低温方法。特别是，需要允许以足够低的热预算制造用于电池结构体的阳极锂膜，从而允许在低温材料如不锈钢、铝或铜箔上制造功能化结构体的方法。
发明概述
根据本发明，描述以脉冲调制的直流物理气相沉积法沉积LiCoO2层。这种沉积可以提供具有适宜的<101>取向的LiCoO2结晶层的低温、高沉积速率的沉积。所述沉积的一些实施方案解决了对LiCoO2膜的高速率沉积的需要，所述LiCoO2膜可以用作固态可充电Li电池中的阴极层。根据本发明的方法的实施方案可以消除常规上使LiCoO2层结晶所需要的高温(＞700℃)退火步骤。
根据本发明一些实施方案的沉积LiCoO2层的方法包括将衬底放置在反应器中；使包含氩气和氧气的气体混合物流过所述反应器；和将脉冲调制的DC功率施加到相对所述衬底放置的由LiCoO2形成的靶上。在一些实施方案中，在所述衬底上形成LiCoO2层。此外，在一些实施方案中，所述LiCoO2层是取向<101>的结晶层。
在一些实施方案中，可以形成层叠的电池结构体。所述层叠的电池结构体包含沉积在薄衬底上的一个或多个电池层叠体，其中每一个电池层叠体包含：导电层、沉积在所述导电层上的结晶LiCoO2层、沉积在所述LiCoO2层上的LiPON层；和沉积在所述LiPON层上的阳极。可以将顶部的导电层沉积在所述一个或多个电池层叠体上。
在一些实施方案中，可以在聚集型设备(cluster tool)中形成电池结构。在聚集型设备中制造电池的方法包括：将衬底装载到聚集型设备中；在所述聚集型设备的第一室中，将导电层沉积在所述衬底上；在所述聚集型设备的第二室中，将结晶LiCoO2层沉积在所述导电层上；在所述聚集型设备的第三室中，将LiPON层沉积在所述LiCoO2层上；在第四室中，将阳极层沉积在所述LiCoO2层上；和在所述聚集型设备的第五室中，将第二导电层沉积在所述LiPON层上。
用于固定薄衬底的固定装置可以包含顶部和底部，其中所述薄衬底是在当所述顶部附在所述底部上时被固定的。
下面参考下列附图进一步论述本发明的这些和其它实施方案。应该理解上面的概述和下面的详述都只是示例性和说明性的，并不限制要求保护的本发明。此外，关于在沉积处理过程中或在结合这些层的装置工作时的某些层的沉积或性能的具体说明或理论仅仅是为了说明而表述的，而不应该被认为限制本发明公开内容或权利要求的范围。
附图简述
图1A和1B说明了可以在根据本发明的沉积方法中使用的脉冲调制的DC偏压式反应性沉积装置。
图2显示了可以用于图1A和1B中说明的反应器的靶的一个实例。
图3说明了根据本发明的一些实施方案的薄膜电池设计。
图4A和4B显示了根据本发明的实施方案沉积的LiCoO2膜的x射线衍射分析和SEM照片。
图5A至5E显示了根据本发明的一些实施方案的LiCoO2膜的SEM照片。
图6A说明了根据本发明的一些实施方案沉积在薄衬底上的LiCoO2层。
图6B说明了根据本发明的一些实施方案沉积在薄衬底上的导电层之上的LiCoO2层。
图7A、7B、7C和7D说明了可以在根据本发明的一些实施方案沉积的LiCoO2层在沉积时使用的薄衬底支架和掩模的配置。
图8说明了可以用于形成具有根据本发明的一些实施方案沉积的LiCoO2层的电池的聚集型设备。
图9A和9B说明了具有根据本发明的一些实施方案沉积的LiCoO2层的层叠电池结构的实例。
图10A至10D说明了沉积在硅晶片上的铱层上面的LiCoO2的沉积和退火的步骤。
图11A至11D说明了根据本发明一些实施方案形成在铱层上面的单层电池。
图12A至12L说明了结晶LiCoO2层在硅或氧化铝衬底上的沉积。
在所述图中，具有相同标记的元件具有相同或类似的功能。
发明详述
根据本发明的实施方案，通过脉冲调制的dc物理气相沉积(PVD)法将LiCoO2膜沉积在衬底上。与例如Kim等相反，根据本发明一些实施方案的LiCoO2膜提供结晶LiCoO2膜，它是在不使用金属成核或阻挡下层膜的情况下，在沉积过程中沉积在衬底温度低到约220℃的衬底上的。通过退火，可以使沉积原样(as-diposited)的LiCoO2膜容易熟化至很高的结晶状态。另外，当在贵金属膜上安置时，可以将沉积原样的结晶膜在进一步大大降低的温度例如低至400至500℃而不是在700℃的温度退火，因而提供了固态电池在更低温度的衬底上的沉积、退火和制造。
在本申请中，描述一种不需要第二前侧离子源或离子辅助设备(assistance)的单一扩展源，所述单一扩展源按比例确定为400mm×500mm用于制造，以在2000cm2的面积上以每小时1.2微米厚度的沉积速率实现在25个点测量的LiCoO2均匀性为3％的1-∑。
关于使用这种方法的其它沉积，在沉积过程中的衬底的温度测量表明衬底保持小于224℃。使用从Omega Engineering，Stamford，Ct购买的温度粘结剂(sticker)(Model no.TL-F-390，在199-224℃是活性的)进行温度测量。
此外，在一些实施方案中，根据本发明沉积的膜可以具有高于常规膜的方法约10至约30倍的沉积速率。在表I中说明了根据本发明沉积的膜的沉积厚度和沉积时间。此外，可以将根据本发明的膜沉积在宽面积的衬底上，所述衬底具有的表面面积为现有的溅射方法的表面面积的10至50倍，从而导致高得多的生产率和低得多的制造成本，由此提供高容量、低成本的电池。
此外，不使用离子源的常规沉积方法能够沉积非晶LiCoO2层，但是沉积不了结晶LiCoO2层。令人惊奇的是，根据本发明的一些实施方案的沉积，沉积出具有通过x射线衍射技术容易测量的相当大的结晶性的LiCoO2层。在一些实施方案中，沉积原样的LiCoO2层的结晶性足以用于电池结构，而不用进一步的热处理。在一些实施方案中，通过与沉积在低温衬底上的膜相适合的具有低的热预算的热处理，使沉积原样的LiCoO2层的结晶性得到提高。
此外，根据本发明的一些实施方案沉积的一些LiCoO2层的沉积原样的化学计量表明这种层足以用于电池。在沉积具有结晶性并且具有足够化学计量的LiCoO2膜的证明能力的情况下，可以制造使用沉积原样的LiCoO2膜的电池。将LiCoO2层热处理可以提高结晶性并且降低阻抗。
在一些实施方案中，在衬底上直接沉积具有<101>或<003>结晶取向的LiCoO2结晶层。结晶材料的沉积可以消除或减少使膜结晶并且取向的后续高温退火或贵金属层的需要。消除高温退火允许在轻重量和低温衬底如不锈钢箔、铜箔、铝箔和塑料片上形成电池结构，从而降低电池的重量和成本，同时保持Li基电池的能量密度储存能力。在一些实施方案中，可以在贵金属层如铱上沉积结晶LiCoO2层，从而导致提高结晶性所需的熟化热预算进一步显著降低。
在下列专利申请中描述了通过脉冲调制的DC偏压式反应性离子沉积的材料沉积：Hongmei Zhang等的美国专利申请序列号10/101863，题目为″Biased Pulse DC Reactive Sputtering of Oxide Films″，2002年3月16日提交。在下列专利申请中描述了靶的制备：Vassiliki Milonopoulou等的美国专利申请序列号10/101,341，题目为″Rare-Earth Pre-Alloyed PVD Targets forDielectric Planar Applications″，2002年3月16日提交。美国专利申请序列号10/101863和美国专利申请序列号10/101,341各自均被转让给与本公开相同的受让人，它们各自的全部内容都被结合在此。在美国专利号6,506,289中也描述了氧化物材料的沉积，其全部内容也通过引用结合在此。可以使用与在美国专利号6,506,289和美国申请序列号10/101863中具体描述的那些类似的方法沉积透明的氧化物膜。
图1A显示了根据本发明的由靶12溅射材料的反应器装置10的示意图。在一些实施方案中，装置10可以是例如根据来自Applied Komatsu的AKT-1600 PVD(400×500mm的衬底尺寸)系统或来自Applied Komatsu，SantaClara，CA的AKT-4300(600×720mm的衬底尺寸)系统改造的。例如，AKT-1600反应器具有通过真空传输室连接的三个沉积室。可以改进这些AKT反应器使得在材料膜的沉积过程中，将脉冲调制的DC功率供应到靶上并且将RF功率供应到衬底上。
装置10包含靶12，该靶12通过滤波器15与脉冲调制的DC电源14电连接。在一些实施方案中，靶12是提供沉积在衬底16上的材料的宽面积溅射源的靶。将衬底16与靶12平行并且相对放置。靶12在由脉冲调制的DC电源14将功率施加到其上时起着阴极的作用，并且被等效称为阴极。将电功率施加到靶12上产生等离子体53。将衬底16通过绝缘体54与电极17电容连接。可以将电极17连接到RF电源18上。将磁铁20扫描穿过靶12的顶部。
对于如通过装置10进行的脉冲调制式反应性dc磁控管溅射，通过电源14供应到靶12上的电源的极性在负电压和正电压之间振荡。在正电压期间，在靶12的表面上的绝缘层放电并且防止产生电弧。为了获得无电弧沉积，脉冲频率超过可以取决于靶材料、阴极电流和反向时间的临界频率。使用如装置10中所示的反应性脉冲DC磁控管溅射，可以制备高质量的氧化物膜。
脉冲调制的DC电源14可以是任何脉冲调制的DC电源，例如AdvancedEnergy，Inc的AE Pinnacle plus 10K。在这种DC电源的情况下，可以供应频率在0和350kHz之间的高达10kW的脉冲调制的DC功率。反向电压可以是负的靶电压的10％。使用其它电源可能导致不同的功率特性、频率特性和反向电压百分比。可以将关于这种实施方案的电源14的反向时间调整在0和5μs之间。
滤波器15防止来自电源18的偏压功率耦合到脉冲调制的DC电源14中。在一些实施方案中，电源18可以是2MHzRF电源，例如由ENI，ColoradoSprings，Co.制造的Nova-25电源。
在一些实施方案中，滤波器15可以是2MHz正弦波带阻滤波器。在一些实施方案中，滤波器的带宽可以是约100kHz。因此，滤波器15防止来自衬底16的偏压的2MHz功率损害电源14，并且允许脉冲调制的dc功率和频率通过。
脉冲调制的DC沉积的膜不是完全密集的，并且可能具有柱状结构。由于在柱状物之间的边界，柱状结构可能对高密度是重要的薄膜应用如阻挡膜和电介质膜有害。所述柱状物起着降低材料的介电强度的作用，但是可能提供使电流、离子电流、气体或其它化学试剂如水传输或扩散的扩散通道。在固态电池的情况下，因为柱状结构允许Li通过材料边界更好地传输，由根据本发明的方法获得的具有结晶性的柱状结构对电池性能有利。
在Phoenix系统中，例如，为了将沉积在具有约600×720mm的尺寸的，靶12可以具有约800.00×920.00mm×4至8mm的有效尺寸。可以将衬底16的温度调节到-50℃和500℃之间。在靶12和衬底16之间的距离可以在约3和约9cm之间(在一些实施方案中，在4.8和6cm之间)。可以将工艺气体以高达200sccm的速率引入到装置10的室中，同时可以将在装置10的室中的压力保持在约7和6毫托之间。磁铁20提供被定向在靶12的平面内并且强度为约400和约600高斯之间的磁场，并且以小于约20-30秒/扫描的速率横跨靶12移动。在使用Phoenix反应器的一些实施方案中，磁铁20可以是尺寸约为150mm×800mm的跑道形磁铁。
图2说明了靶12的一个实例。沉积在位于载体板17上的衬底上的膜具有良好的厚度均匀性，其中所述载体板17与靶12的区域52正对。区域52是图1B所示的暴露于均匀的等离子体环境下的区域。在一些实施中，载体17可以是与区域52共同扩张的。图2所示的区域24指其内可以同时实现物理和化学的均匀沉积的区域，例如，物理和化学均匀性提供折射率均匀性、氧化物膜均匀性或金属膜均匀性的地方。图2显示了提供厚度均匀性的靶12的区域52，所述区域52通常大于对沉积膜提供厚度和化学均匀性的靶12的区域24。然而，在最佳方法中，区域52和24可以是共同扩张的。
在一些实施方案中，磁铁20在一个方向例如在图2中的Y方向上延伸超出区域52，使得扫描只在一个方向例如X方向上是必需的，以提供时间平均的均匀磁场。如图1A和1B中所示，磁铁20可以扫描穿过比均匀的溅射侵蚀的区域52更大的靶12的整个范围。磁铁20在与靶12的平面平行的平面内移动。
均匀靶12与大于衬底区域16的靶区域52的组合可以提供厚度高度均匀的膜。此外，沉积膜的材料性能可以是高度均匀的。在大于或等于以均匀膜厚度涂覆的区域的区域上面，靶表面的溅射条件如侵蚀的均匀性、在靶表面的等离子体平均温度和靶表面与处理的气相环境的平衡是均匀的。另外，膜厚度均匀的区域大于或等于具有高度均匀的电、机械或光学性能如折射率、化学计量、密度、透射或吸收率的膜的区域。
靶12可以由提供用于LiCoO2沉积的恰当化学计量的任何材料形成。典型的陶瓷靶材料包含Li和Co的氧化物以及金属Li和Co添加剂和掺杂剂如Ni、Si、Nb或其它适合的金属氧化物添加剂。在本公开中，靶12可以由用于沉积LiCoO2膜的LiCoO2形成。
在本发明的一些实施方案中，形成材料砖。可以将这些砖装配在垫板上以形成用于装置10的靶。宽面积的溅射阴极靶可以由更小的砖的密集阵列形成。因此，靶12可以包含多块砖，例如包含在2至60块之间的独立砖。可以将砖精加工成一定尺寸，使得提供小于约0.010″至约0.020″或小于半毫米的边缘式非接触的砖与砖的边宽，以消除可能发生在砖30的相邻砖之间的等离子体处理。在图1B中，在靶12的砖和暗区阳极或接地屏蔽19之间的距离有时可以更大，以提供非接触组件或者在处理室调节或操作过程中提供热膨胀公差。
如图1B中所示，在上覆衬底16的区域中，可以在靶12和衬底16之间的区域内产生均匀的等离子体环境。可以在整个靶12下面延伸的区域51中产生等离子体53。靶12的中心区域52可以经受均匀的溅射侵蚀的条件。如在此进一步论述那样，则沉积在置于中心区域52下面的任何地方的衬底上的层在厚度和其它性能方面(即，介电性、光学指数或材料浓度)可以是均匀的。在一些实施方案中，靶12基本上是平坦的，以提供沉积在衬底16上的膜的均匀性。实际上，靶12的平面性可以指在区域52的靶表面的所有部分都是不超过几毫米的平坦表面，并且可以典型地为不超过0.5mm的平坦表面。
图3显示了具有根据本发明的一些实施方案沉积的LiCoO2层的电池结构。如图3中所示，将金属集电层302沉积在衬底301上。在一些实施方案中，可以在沉积LiCoO2层303之前，以各种方法将集电层302形成图案。而且，根据一些实施方案，LiCoO2层303可以是沉积的结晶层。在本发明的一些实施方案中，层303在无需结晶热处理的情况下就已是结晶的。因此，衬底301可以是硅晶片、钛金属、氧化铝或其它常规的高温衬底，但是还可以是低温材料如塑料、玻璃或其它能够对来自高温结晶热处理的损害敏感的材料。这种特性可以具有降低通过本发明形成的电池结构的费用和重量的很大优点。LiCoO2的低温沉积允许电池层一个接一个的连续沉积。这种方法具有在不包含衬底层的情况下，以层叠状态获得连续的电池结构层的优点。叠层式电池提供更高的比能量密度以及低阻抗的充电和放电操作。
在一些实施方案中，可以在衬底301上沉积氧化物层。例如，可以在硅晶片上沉积硅氧化物层。可以在导电层302和衬底301之间形成其它层。
如在图3中进一步显示，在LiCoO2层303上面沉积LiPON层304(LixPOyNZ)。LiPON层304是电池300的电解质，而LiCoO2层303作为阴极。可以在LiPON层304上面沉积金属导电层305以完成电池。金属导电层305可以包含与LiPON层304相邻的锂。
在LiPON层304上面沉积阳极305。阳极305可以是例如蒸发的锂金属。还可以使用其它材料，例如镍。然后将作为导电材料的集电极306沉积在阳极305的至少一部分上面。
通过Li离子在从集电极306至集电极302的方向上迁移，以将集电极306和集电极302之间的电压保持为恒定电压，使得Li基薄膜电池进行工作。于是，电池结构300供应稳定电流的能力依赖于Li离子扩散通过LiPON层304和LiCoO2层303的能力。通过薄膜电池中的块状阴极LiCoO2层303的Li迁移借助晶粒或晶粒边界发生。在本公开中不受任何特定的迁移理论限制的情况下，认为是其平面与衬底302平行的晶粒堵塞了Li离子的流动，同时以与衬底301垂直的平面取向(即，与Li离子流的方向平行取向)的晶粒促进Li扩散。因此，为了提供高电流的电池结构，LiCoO2层303应该包含以<101>方向或<003>方向取向的晶体。
根据本发明，可以使用如上所述的脉冲调制的DC偏压的PVD系统在衬底302上沉积LiCoO2膜。另外，可以改进AKT 1600 PVD系统以提供RF偏压，并且可以使用Advanced Energy Pinnacle plus 10K脉冲调制的DC电源对靶提供功率。电源的脉冲频率可以从约0KHz变化至约350KHz。电源的功率输出在0和约10kW之间。在dc溅射的情况下，可以使用电阻率在约3至约10kΩ的范围内的致密LiCoO2砖的靶。
在一些实施方案中，在Si晶片上沉积LiCoO2膜。可以使用包含氧气和氩气的气流，在一些实施方案中，氧气与氩气的比率在0至约50％的范围内，同时总气流约为80sccm。在沉积过程中，脉冲频率在约200kHz至约300kHz的范围。还可以将RF偏压施加到衬底上。在多次试验中，根据O2/Ar比率以及衬底偏压，沉积速率从约
Figure GSB00000431891300111
/(kW秒)变化至约
Figure GSB00000431891300112
(kW秒)。
表I说明了根据本发明的LiCoO2的一些示例性沉积。对得到的薄膜取得的XRD(x射线衍射)结果说明根据本发明沉积的膜是结晶膜，该结晶膜通常具有高度纹理化的大小达到约150nm的晶粒尺寸。占优势的晶体取向对O2/Ar比率显得敏感。对于某些O2/Ar比率(～10％)，沉积原样的膜具有在<101>方向或<003>方向上的优选取向和生长差的<003>平面。
图4A和4B分别说明了作为表I中的实施例15沉积的LiCoO2膜的XRD分析和SEM横截面。对于初始温度约为30℃的衬底，使用2kW的靶功率、300kHz的频率以及60sccm的Ar和20sccm的O2，在Si晶片上沉积这种LiCoO2膜。如图4A的XRD分析所示，强的<101>峰表示LiCoO2晶体的强取向显示在适宜的<101>结晶方向上。图4B中所示的SEM横截面进一步显示了具有<101>方向的膜的柱状结构和得到的LiCoO2晶体的晶粒边界。
图5A至5E显示了根据本发明的进一步示例性沉积的LiCoO2晶体的SEM横截面。在每一个实施例中，使用约2kW的靶功率和约250kHz的频率，在Si晶片上进行LiCoO2膜的沉积。在图5A中所示的LiCoO2膜对应在表I中的示例性沉积实施例1。在图5A中所示的LiCoO2膜的沉积中，不使用偏压功率，以及氩气流量约为80sccm并且氧气流量约为0sccm。在400×500mm的全部衬底区域上面都实现了约1.45μm/小时的沉积速率。此外，如在图5A所示的横截面中说明，实现了LiCoO2的<101>取向。
图5A中所示的LiCoO2层的沉积速率很高，可能归因于陶瓷LiCoO2氧化物溅射靶的较高电导率或较低电阻率。使用欧姆计，在靶12表面上的约4cm的距离上测量出10千欧姆的靶电阻。这种高速率可以在宽的区域上，在短时间内以高速率制备电池所需的等于或厚于3微米的LiCoO2层，从而导致很高的生产率和很低的成本。在这种低的靶功率下，通过相同测量技术在相同距离上测量的数量级约为500kΩ或更高的靶电阻不允许这种高溅射效率或高沉积速率。常规的靶材料的电阻可能是高得不可测量。在约4cm的表面上的100kΩ的电阻导致高溅射效率和高沉积效率。此外，因为沉积速率典型地与靶功率几乎成直线比例，所以在6kW的沉积产生约3μm/小时的沉积速率，这样的沉积速率对于Li基薄膜固态电池在400×500mm2的表面面积上的可制造性是很适宜的沉积速率。
图5B中所示的LiCoO2层是在作为表I中的实施例7列举的条件下沉积的。此外，在沉积中没有使用偏压。使用约72sccm的氩气流量和约8sccm的氧气流量。沉积速率显著降低至约0.85μm/小时。此外，尽管可以辨别<101>结晶，但是<101>结晶在图5A中所示的膜的沉积中不是明显显示的。
图5C中所示的LiCoO2膜是根据表I中的实施例3沉积的。在这种沉积中，将100W的偏压功率施加到衬底上。此外，使用72sccm的氩气流量和8sccm的氧气流量。沉积速率约为0.67μm/小时。因此，与图5B中所示的LiCoO2膜相比，偏压的施加进一步降低沉积速率(从图5B中所示的实施例的0.85μm/小时降低至图5C中所示的实施例的0.67μm/小时)。此外，形成的晶体的需要的<101>方向性显得进一步降低。
图5D中所示的LiCoO2膜对应表I中的实施例4。在这种沉积中，增加Ar/O2的比率。如图5D中所示，增加Ar/O2的比率提高结晶性。相对于在图5C中说明的实施例，使用约76sccm的氩气流和约4sccm的氧气流以及保持对衬底的100W偏压，进行在图5D中说明的沉积。LiCoO2的沉积速率从在图5C中说明的0.67μm/小时的速率提高至0.79μm/小时。
在图5E中说明的示例性沉积对应在表I中的实施例5。将衬底温度设定在约200℃，同时将偏压功率保持在约100W。将氩气流量设定在约76sccm，并且将氧气流量设定在约4sccm。得到的LiCoO2层的沉积速率约为0.74μm/小时。
在表I的实施例6中，将氩气流量设定在约74sccm并且将氧气流量设定在约6sccm，从而导致约0.67μm/小时的LiCoO2沉积速率。因此，相对于在图5E中说明的沉积，增加氩气和氧气流量这两者导致更低的沉积速率。
数据清楚地表明沉积原样的LiCoO2结晶膜可以是在如表II所示的几个工艺操作条件下获得的。具体是，对于根据本发明的实施方案的工艺操作条件，获得了在低功率下的非常高的沉积速率，并且同时获得了取向晶体结构。
图6A说明了根据本发明的一些实施方案在薄衬底601上沉积的LiCoO2层602。使用沉积在薄衬底601上的结晶LiCoO2阴极膜602，可以实现更高的锂离子迁移率，所述薄衬底601具有与电池层叠体本身的厚度相当的厚度，而不是具有电池层叠体的厚度的多倍或几十倍的厚度。这种膜可以导致更快的充电和放电速率。衬底601可以由薄金属片(例如铝、钛、不锈钢或其它适合的薄金属片)形成，可以由聚合物或塑料材料形成，或者可以由陶瓷或玻璃材料形成。如图6B中所示，如果衬底601是绝缘材料，则可以在衬底601和LiCoO2层602之间沉积导电层603。
在薄衬底上沉积材料包括在沉积过程中固定并且放置衬底。图7A、7B、7C和7D说明了用于固定薄膜衬底的可重复使用的固定装置700。如图7A中所示，可重复使用的固定装置700包含咬在一起的顶部701和底部702。将薄衬底601放置在顶部701和底部702之间。如图7B中所示，顶部701和底部702使衬底601被施加张力，随后在顶部701靠近底部702时被夹住。通过固定装置700可以容易地固定衬底601，因而可以将衬底601处理并且定位。在一些实施方案中，将衬底601的拐角即区域703除去，使得在顶部701靠近底部702时，因避免了″卷绕″拐角夹紧作用而使衬底601更容易拉伸。
如图7C中所示，可以将掩模712附着在固定装置700上。在一些实施方案中，固定装置700包含导向装置以使固定装置700对准掩模712。在一些实施方案中，可以将掩模712附着在固定装置700上，并且与固定装置700一起移动。可以将掩模712放置在固定装置700中的衬底601上的任何适宜的高度。因此，掩模712可以起着接触或接近式的掩模的作用。在一些实施方案中，掩模712由装配在类似于固定装置700的固定装置中的另一个薄衬底形成。
如图7C和7D中所示，可以将固定装置700和掩模712相对于支架710放置。例如，支架710可以是如图1A和1B所示的处理室的基座、支架或静电吸盘。固定装置700和掩模712可以具有允许相互容易对准以及与支架710容易对准的结构元件。在一些实施方案中，掩模712在处理室中是固有的，并且如图7D中所示，并且在将固定装置700定位在支架710上的过程中与固定装置700对准。
使用如图7A、7B、7C和7D中所示的固定装置700允许在处理室中处理薄膜衬底。在一些实施方案中，薄膜衬底可以约为10μm或更大。此外，一旦装配在固定装置700中，就可以将薄膜衬底601处理并且从处理室移动到处理室。因此，可以使用多处理室系统形成包含一层或多层根据本发明实施方案沉积的LiCoO2层的层叠体。
图8说明了用于处理薄膜衬底的聚集型设备800。例如，聚集型设备800可以包含加载锁(load lock)802和加载锁803，通过所述加载锁装载被装配的薄膜衬底601并且从聚集型设备800中取出得到的装置。室804、805、806、807和808是用于材料的沉积、热处理、蚀刻或其它处理的处理室。室804、805、806、807和808中的一个或多个可以是上述相对于图1A和1B所述的脉冲调制的DC PVD室，并且在这些室中可以沉积根据本发明实施方案沉积的LiCoO2膜。
处理室804、805、806、807和808以及加载锁802和803通过传输室801连接。传输室801包含在处理室804、805、806、807及808与加载锁802及803之间来回移动各个晶片的衬底传输机械手臂。
在常规的薄膜电池的制造中，将陶瓷衬底装载到加载锁803中。可以在室804中沉积薄金属层，随后在室805中进行LiCoO2沉积。然后通过加载锁803取出衬底，以在聚集型设备800外面的空气中进行热处理。然后通过加载锁802将处理后的晶片再次装载到聚集型设备800中。可以在室806中沉积LiPON层。然后再次将所述晶片从聚集型设备800中取出以沉积锂阳极层，或者有时可以改装室807以沉积锂阳极层。在室808中沉积第二金属层以形成充电集电极和阳极集电极。然后将完成的电池结构体从聚集型设备800中通过加载锁802卸载。通过在传输室801中的机械手臂在室间来回移动晶片。
根据本发明制造的电池结构体可以使用装载到固定装置如固定装置700中的薄膜衬底。然后将固定装置700装载到加载锁803中。室804还可以包括导电层的沉积。然后室805包括根据本发明实施方案的LiCoO2层的沉积。然后可以在室806中沉积LiPON层。还可以改装室807以沉积富锂材料如锂金属，并且可以将室808用于沉积集电极的导电层。在这种方法中，没有使用热处理来使LiCoO2层结晶。
薄膜电池工艺的另一个优点是层叠电池结构体的能力。换句话说，装载到聚集型设备800中的衬底可以多次通过处理室804、805、806、807和808，以制造多重层叠的电池结构体。图9A和9B示出了这些电池结构体。
图9A示出了平行结合的层叠体。如图9A中所示，将例如可以是塑料衬底的衬底601装载到加载锁803中。导电层603，例如约2μm的铝、铜、铱或其它材料作为底部的集电极。例如，导电层603可以在室804中进行沉积。然后在导电层603上沉积LiCoO2层602。根据本发明的实施方案，LiCoO2层602可以是约3-10μm，并且可以在室805中进行沉积。然后可以将晶片移动到室806中，在此可以沉积厚度为约.5至约2μm的LiPON层901。在室807中，然后可以在其内沉积阳极层902，例如，高达约10μm的锂金属层。然后在阳极层902上面沉积第二导电层903。然后可以在第一电池层叠体上面沉积第二电池层叠体，所述第一电池层叠体由金属层603、LiCoO2层602、LiPON层901、锂层902和集电导电层903形成。在集电导电层903上面，形成另一个锂层902。在锂层902上面形成另一个LiPON层901。在LiPON层901上面形成另一个LiCoO2层602，最后在LiCoO2层602上面形成另一个金属层603。在一些实施方案中，可以形成另外的层叠体。在一些实施方案中，金属层603和903在用于沉积的掩模方面不同，以形成用于将层电连接的小突起。
如上所述，可以形成任意多个独立的电池层叠体，以形成平行的电池结构。这种电池层叠结构的平行配置可以表示为：集电极/LiCoO2/LiPON/阳极/集电极/阳极/LiPON/LiCoO2/集电极/LiCoO2.../集电极。图9B示出了相应电池结构的备选层叠体：集电极/LiCoO2/LiPON/阳极/集电极/LiCoO2/LiPON/阳极/集电极.../集电极。在这种情况下，因为各个电池层叠体共用阳极，所以形成串联配置的电池层叠结构。
为了形成在图9A和9B中所示的结构，再次将衬底循环(rotate)通过聚集型设备800的室中以沉积多组电池。通常，以这种方式可以形成任意多个电池的层叠体。
在一些实施方案中，可以在铱上沉积化学计量的LiCoO2。图10A至10D说明了用于在已经沉积于Si晶片上的铱层上面沉积Li-Co的退火过程。如上所述，在靶功率为2kW、没有偏压功率、反向时间为1.6μs、脉冲频率为300kHz、Ar流为60sccm并且O2流为20sccm、没有预处理、历时7200秒的情况下完成LiCoO2沉积。结果，沉积出约1.51μm的LiCoO2层。
图10A至10D显示了如上所述沉积的LiCoO2的沉积原样层和退火层的XRD分析。沉积原样层的XRD分析证实了表示结晶LiCoO2的<003>取向的在2θ＝18.85°的弱峰、与需要的<101>晶体方向一致的约在2θ＝38.07°的较尖锐峰和与铱的<111>方向对应的在2θ＝40.57°的峰。然而，<101>LiCoO2峰的位置表明<101>LiCoO2峰是非化学计量的LiCoO2。为了有利于用作电池层，化学计量的LiCoO2提供最好的Li迁移。本领域普通技术人员应该注意到仔细调节沉积参数可以提供适宜取向的化学计量的LiCoO2。
图10B显示了图10A中所示的样品在空气中于300℃退火2小时之后的XRD分析。如图10B中所示，对应<003>LiCoO2的XRD峰增强，表明进入<003>方向内的LiCoO2结晶。此外，LiCoO2的<101>峰稍稍位移至2θ＝38.53°，表明<101>LiCoO2的更接近化学计量的结晶。然而，在这种退火之后，结晶LiCoO2仍然不是化学计量的。本领域普通技术人员应该注意到退火温度等于或小于300℃的情况下，退火越久和/或进一步调节沉积的化学计量可以导致有用取向的化学计量的LiCoO2层。因此，低温材料如聚合物、玻璃或金属可以用作衬底。
图10C说明了来自在空气中进行2小时后续的500℃退火之后的样品的XRD分析。如图10C中所示，更多的LiCoO2结晶成<003>层。此外，<101>LiCoO2峰再次位移至2θ＝39.08°，表明LiCoO2的<012>层的结晶。在这种情况下，<012>LiCoO2晶体是化学计量的，因此允许有效的Li迁移。本领域普通技术人员应该注意到在退火温度等于或小于500℃的情况下，退火越久和/或进一步调节沉积的化学计量可以导致有用取向的化学计量的LiCoO2层。因此，低温材料如聚合物、玻璃或金属可以用作衬底。
图10D说明了在空气中进行2小时后续的700℃退火之后的样品的XRD分析。如图10D中所示，<003>LiCoO2峰消失，但是<012>LiCoO2峰相对仍然与图10C中说明的在500°退火所显示的峰相同。
图10A至10D证实了<101>LiCoO2在铱层上面的低温沉积。后续的500℃退火可以是适宜的，以改变<101>LiCoO2层的化学计量，但是700℃退火看来是不必要的。在退火温度小于500℃的情况下，可以在玻璃、铝箔、塑料或其它低温衬底材料上实现LiCoO2层在导电铱层上的沉积。退火温度小于500℃但大于300℃或延长低温退火时间还可以导致化学计量的结晶LiCoO2的需要的取向。
图11A至11D说明根据本发明一些实施方案的单层电池的形成。如图11A中所示，可以在衬底1101上沉积剥离层1102。此外，可以在剥离层1102上面沉积铱层1103。在一些实施方案中，衬底1101可以是塑料、玻璃、Al箔、Si晶片或任何其它材料。剥离层1102可以是任何剥离层，并且可以是聚合物层如聚酰亚胺、无机层如CaF2或碳，或由于例如氧化、热或光而丧失其粘附性的粘合剂层。剥离层是熟知的。铱层1103可以是约
Figure GSB00000431891300171
或更厚。
如图11B中所示，如上所述，在铱层1103上面沉积LiCoO2层。在一些实施方案中，可以在该步骤进行退火。在一些实施方案中，可以在进行退火步骤之前沉积另外的电池层。在一些实施方案中，有用的结晶取向的化学计量的LiCoO2层可以在无需进一步退火的情况下导致沉积原样的LiCoO2。
图11C说明了LiPON层1105在LiCoO2层上面的沉积、Li层1106在LiPON层1105上面的沉积和电极层1107在Li层1106上面的沉积。在一些实施方案中，在此可以进行如上所述高达500℃的退火步骤。
如图11D中所示，可以从衬底1101上″剥离″所得的单个的层电池，所述单个的层电池由铱层1103、LiCoO2层1104、LiPON层1105、Li层1106和电极层1107形成。这种单个的层电池可以是厚度约为5μm或更大的自支撑电池。在无需衬底1101的情况下，熟知的是这种电池具有大于约1kW-小时/升的储能能力。
作为如图11A至11D中所述的剥离方法的备选方案，可以在退火过程中除去衬底，从而留下单个的层电池。此外，在一些实施方案中，可以使用溶剂、蚀刻或光处理除去衬底1101。此外，可以将单个的层电池以任何方式组合或层叠以提供在特定电压下具有更大储能的装置。
图12A说明了在Al2O3衬底上沉积原样的LiCoO2膜(表I中的实施例32)的XRD分析。观察到宽的<003>结晶LiCoO2峰。在分析中的其余峰(没有在图12A中标记)由Al2O3衬底产生。<003>峰是在根据本发明的实施方案的沉积原样的结晶LiCoO2膜中的层状结构的特征。
图12B说明了在图12A中所示的LiCoO2膜在2小时的700℃退火之后的结晶性。如图12B中所示，<003>峰变得更尖锐且更高，表明更好的结晶性。如图12G至12J中所示，与12C至12F相比，柱状结构随着退火熟化，并且晶粒尺寸随着退火变得更大。图12B也显示了<012>和<006>结晶峰。
图12C至12F显示了与图I中的实施例32对应的沉积原样膜的粒度的SEM照片。图12G至12J显示了如图12B中说明的退火膜的粒度的SEM照片。图12C至12F与图12G至12J的比较说明退火处理产生增加的粒度。
图12K说明了与表I中的实施例31对应的沉积原样结晶膜的形貌的断裂横截面SEM。图12L说明了根据表I中的实施例32生长的膜的类似的横截面SEM。
本领域技术人员应该认识到在本公开中具体论述的实施例的变化和修改。这些变化和修改意在本公开的范围和精神之内。同样，所述范围只受到后附权利要求的限制。
Figure GSB00000431891300191
Figure GSB00000431891300201
表II
Figure GSB00000431891300211

Claims (13)

1.一种电池结构体，所述电池结构体包含：多层的电池层叠体，所述多层电池层叠体中至少一层包括在低温衬底上面沉积的结晶LiCoO2层，其中所述结晶LiCoO2层具有在
Figure FSB00000828520200011
至
Figure FSB00000828520200012
之间的晶粒大小；此外其中所述低温衬底是具有与所述多层电池层叠体的厚度相当的厚度的薄衬底。
2.权利要求1所述的结构体，所述结构体还包含在所述结晶LiCoO2层和所述低温衬底之间沉积的第一导电层。
3.权利要求2所述的结构体，其中所述导电层是铱层。
4.权利要求1所述的结构体，所述结构体还包含在所述LiCoO2层上面沉积的LiPON层。
5.权利要求2所述的结构体，所述结构体还包含在所述LiCoO2层上面沉积的第二导电层。
6.一种层叠电池结构体，其包含：
在薄衬底上沉积的一个或多个电池层叠体，其中每一个电池层叠体包含：
第一导电层，
在所述第一导电层上面作为结晶层沉积的LiCoO2层，其中所述结晶LiCoO2层具有在至
Figure FSB00000828520200014
之间的晶粒大小，
在所述结晶LiCoO2层上面沉积的LiPON层，
在所述LiPON层上面沉积的阳极层；和
在所述一个或多个电池层叠体上面沉积的顶部导电层，其中所述薄衬底具有与一个或多个电池层叠体的厚度相当的厚度。
7.权利要求6所述的层叠电池结构体，其中所述电池层叠体形成平行层叠的电池结构体。
8.权利要求6所述的层叠电池结构体，其中所述电池层叠体形成串联层叠的电池结构体。
9.权利要求6所述的层叠电池结构体，其中所述第一导电层是沉积在所述薄衬底上的金属层。
10.权利要求9所述的层叠电池结构体，其中所述金属层是铱层。
11.权利要求9所述的层叠电池结构体，其中所述薄衬底是低温衬底。
12.权利要求6所述的层叠电池结构体，其中所述第一导电层是金属箔。
13.权利要求12所述的层叠电池结构体，其中所述金属箔由来自铜、金、铝、不锈钢和其它镍或钴基超耐热不锈钢所组成的组中的金属形成。
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