AOT11S65/AOB11S65/AOTF11S65

650V 11A α MOS TM Power Transistor

General Description
The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of

performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply designs.

Features
VDS @ Tj,max 750V
IDM 45A
RDS(ON),max 0.399Ω
Qg,typ 13.2nC
Eoss @ 400V 2.9µJ

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT11S65/AOB11S65 AOTF11S65 AOTF11S65L Units
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 11 11* 11*
ID
Current TC=100°C 8 8* 8* A
C
Pulsed Drain Current IDM 45
Avalanche Current C IAR 2 A
Repetitive avalanche energy C EAR 60 mJ
Single pulsed avalanche energy G EAS 120 mJ
TC=25°C 198 39 31 W
PD
Power Dissipation B Derate above 25oC 1.6 0.31 0.25 W/ oC
MOSFET dv/dt ruggedness 100
H dv/dt V/ns
Peak diode recovery dv/dt 20
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J TL 300 °C
Thermal Characteristics
Parameter Symbol AOT11S65/AOB11S65 AOTF11S65 AOTF11S65L Units
Maximum Junction-to-Ambient A,D RθJA 65 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- -- °C/W
Maximum Junction-to-Case RθJC 0.63 3.25 4 °C/W
* Drain current limited by maximum junction temperature.

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 AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 650 - -
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 700 750 - V
VDS=650V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS=520V, TJ=150°C - 10 -
IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 4 V
VGS=10V, ID=5.5A, TJ=25°C - 0.35 0.399 Ω
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=5.5A, TJ=150°C - 0.98 1.11 Ω
VSD Diode Forward Voltage IS=5.5A,VGS=0V, TJ=25°C - 0.82 - V
IS Maximum Body-Diode Continuous Current - - 11 A
ISM Maximum Body-Diode Pulsed CurrentC - - 45 A
DYNAMIC PARAMETERS
Ciss Input Capacitance - 646 - pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance - 42 - pF
Effective output capacitance, energy
Co(er) - 33 - pF
related H
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) - 117 - pF
related I
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz - 1.1 - pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz - 18 - Ω
SWITCHING PARAMETERS
Qg Total Gate Charge - 13.2 - nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=5.5A - 3.2 - nC
Qgd Gate Drain Charge - 4.3 - nC
tD(on) Turn-On DelayTime - 25 - ns
tr Turn-On Rise Time VGS=10V, VDS=400V, ID=5.5A, - 20 - ns
tD(off) Turn-Off DelayTime RG=25Ω - 77 - ns
tf Turn-Off Fall Time - 19 - ns
trr Body Diode Reverse Recovery Time IF=5.5A,dI/dt=100A/µs,VDS=400V - 278 - ns
Irm Peak Reverse Recovery Current IF=5.5A,dI/dt=100A/µs,VDS=400V - 22 - A
Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V - 4.2 - µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.

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 AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20

10V 7V
20 16 10V
7V
6V
6V
15 12
5.5V

ID (A)
ID (A)

5.5V 8
10 5V

5V 4 VGS=4.5V
5
VGS=4.5V
0
0
0 5 10 15 20
0 5 10 15 20
VDS (Volts) VDS (Volts)
Figure 1: On-Region Characteristics@25°C Figure 2: On-Region Characteristics@125°C

100 1.2
-55°C
VDS=20V

10 0.9
RDS(ON) (Ω )

125°C
VGS=10V
ID(A)

1 0.6

0.1 25°C 0.3

0.01 0.0
2 4 6 8 10 0 5 10 15 20 25
VGS(Volts) ID (A)
Figure 3: Transfer Characteristics Figure 4: On-Resistance vs. Drain Current and
Gate Voltage

3 1.2
Normalized On-Resistance

2.5
VGS=10V
1.1
ID=5.5A
BVDSS (Normalized)

1.5 1

1
0.9
0.5

0 0.8
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Temperature (°C) TJ (oC)
Figure 5: On-Resistance vs. Junction Temperature Figure 6: Break Down vs. Junction Temperature

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 AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E+02 15

1.0E+01
12 VDS=480V
125°C
1.0E+00 ID=5.5A

VGS (Volts)
1.0E-01 25°C
IS (A)

1.0E-02 6

1.0E-03
3
1.0E-04

1.0E-05 0
0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
VSD (Volts) Qg (nC)
Figure 7: Body-Diode Characteristics (Note E) Figure 8: Gate-Charge Characteristics

10000 6

Ciss 5
1000
Capacitance (pF)

Eoss(uJ)

4
100
Coss
3 Eoss
10
2
Crss
1
1

0 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600

VDS (Volts) VDS (Volts)

Figure 9: Capacitance Characteristics Figure 10: Coss stored Energy

100 100

RDS(ON) RDS(ON)
10 limited 10µs
10µs 10 limited
ID (Amps)
ID (Amps)

100µs 100µs
1 DC 1
1ms 1ms
10ms DC 10ms

0.1 0.1s
0.1
1s
TJ(Max)=150°C TJ(Max)=150°C
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 11: Maximum Forward Biased Safe Figure 12: Maximum Forward Biased Safe Operating
Operating Area for AOT(B)11S65 (Note F) Area for AOTF11S65(Note F)

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 AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 150

RDS(ON) 10µs
120
10 limited

EAS(mJ)
100µs
ID (Amps)

90
1 1ms
DC 10ms 60

0.1 0.1s
TJ(Max)=150°C 1s 30
TC=25°C
0.01 0
1 10 100 1000 25 50 75 100 125 150 175
VDS (Volts) TCASE (°C)
Figure 13: Maximum Forward Biased Safe Operating Figure 14: Avalanche energy
Area for AOTF11S65L(Note F)

12

10
Current rating ID(A)

0
0 25 50 75 100 125 150
TCASE (°C)
Figure 15: Current De-rating (Note B)

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 AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=0.63°C/W

0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)11S65 (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=3.25°C/W

0.1

PD
0.01
Ton
Single Pulse
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF11S65 (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=4°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF11S65L (Note F)

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 AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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