FQH44N10 — N-Channel QFET® MOSFET

FQH44N10
N-Channel QFET® MOSFET
100 V, 48 A, 39 mΩ

Description Features
This N-Channel enhancement mode power MOSFET is • 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V,
produced using ON Semiconductor’s proprietary ID = 24 A
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to • Low Gate Charge (Typ. 48 nC)
reduce on-state resistance, and to provide superior • Low Crss (Typ. 85 pF)
switching performance and high avalanche energy
strength. These devices are suitable for switched mode • 100% Avalanche Tested
power supplies, audio amplifier, DC motor control, and • 175C Maximum Junction Temperature Rating
variable switching power applications.

G
G
D TO-247
S
S
Absolute Maximum Ratings T C
o
= 25 C unless otherwise noted.

Symbol Parameter FQH44N10-F133 Unit

VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C) 48 A
- Continuous (TC = 100°C) 34 A
IDM Drain Current - Pulsed (Note 1) 192 A
VGSS Gate-Source Voltage  25 V
EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ
IAR Avalanche Current (Note 1) 48 A
EAR Repetitive Avalanche Energy (Note 1) 18 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD Power Dissipation (TC = 25°C) 180 W
- Derate above 25°C 1.2 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum Lead Temperature for Soldering,
TL 300 °C
1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter FQH44N10-F133 Unit
RJC Thermal Resistance, Junction-to-Case, Max. 0.83 °C/W
RCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W
RJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W

©2008 Semiconductor Components Industries, LLC. Publication Order Number:

September-2017, Rev. 3 FQH44N10-F133/D
 FQH44N10 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQH44N10-F133 FQH44N10 TO-247 Tube N/A N/A 30 units

Electrical Characteristics T C
o
= 25 C unless otherwise noted.

Symbol Parameter Test Conditions Min Typ Max Unit


Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 100 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25°C -- 0.1 -- V/°C
/ TJ Coefficient
IDSS VDS = 100 V, VGS = 0 V -- -- 1 A
Zero Gate Voltage Drain Current
VDS = 80 V, TC = 150°C -- -- 10 A
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 24 A -- 0.03 0.039 
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 24 A -- 31 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1400 1800 pF
Coss Output Capacitance f = 1.0 MHz -- 425 550 pF
Crss Reverse Transfer Capacitance -- 85 110 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 19 45 ns
VDD = 50 V, ID = 43.5 A,
tr Turn-On Rise Time -- 190 390 ns
RG = 25 
td(off) Turn-Off Delay Time -- 90 190 ns
(Note 4)
tf Turn-Off Fall Time -- 100 210 ns
Qg Total Gate Charge VDS = 80 V, ID = 43.5 A, -- 48 62 nC
Qgs Gate-Source Charge VGS = 10 V -- 9.0 -- nC
Qgd Gate-Drain Charge (Note 4) -- 24 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 48 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 43.5 A, -- 98 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s -- 360 -- nC


1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.345 mH, IAS = 48 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 43.5 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

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 FQH44N10 — N-Channel QFET® MOSFET
Typical Characteristics

VGS
2
Top : 15.0 V 10
2
10 10.0 V
8.0 V
7.0 V

ID , Drain Current [A]

6.0 V
ID, Drain Current [A]

5.5 V
5.0 V 1
10 175℃
Bottom : 4.5 V

1
10
25℃
0
10 -55℃
※ Notes :
※ Notes :
1. 250μ s Pulse Test
1. VDS = 40V
2. TC = 25℃
2. 250μ s Pulse Test

0 -1
10 10
10
-1
10
0
10
1
2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.15
2
10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.12

VGS = 10V
RDS(on) [],

1
0.09 10

VGS = 20V
0.06
0
10

0.03 ※ Notes :
175℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

-1
0.00 10
0 30 60 90 120 150 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

4000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
3500 Crss = Cgd
10 VDS = 50V
VGS, Gate-Source Voltage [V]

3000 VDS = 80V

8
Capacitance [pF]

2500
Ciss ※ Notes :
2000 Coss 1. VGS = 0 V
6
2. f = 1 MHz

1500
4

1000 Crss

2
500
※ Note : ID = 43.5A

0 0
10
-1
10
0
10
1 0 10 20 30 40 50

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 FQH44N10 — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

Drain-Source Breakdown Voltage 1.2 3.0

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 μA 0.5
1. VGS = 10 V
2. ID = 21.75 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

50
3
10
Operation in This Area
is Limited by R DS(on)
40

10 s
ID, Drain Current [A]

ID, Drain Current [A]

2
10 100 s
1 ms 30
10 ms
10
1 DC
20

0
10 ※ Notes : 10
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
0 1
10 10
2 25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

0
10
ZθJC(t), Thermal Response [oC/W]

D = 0 .5

※ N o te s :
0 .2 1 . Z θ J C ( t) = 0 .8 3 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
-1 3 . T J M - T C = P D M * Z θ J C ( t)
10 0 .1

0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

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 FQH44N10 — N-Channel QFET® MOSFET
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

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 FQH44N10 — N-Channel QFET® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

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 FQH44N10 — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO-247, Molded, 3-Lead, Jedec Variation AB

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