MDD14N25C N-channel MOSFET 250V

MDD14N25C
N-Channel MOSFET 250V, 10.2A, 0.28Ω

General Description Features

These N-channel MOSFET are produced using advanced  VDS = 250V
MagnaChip’s MOSFET Technology, which provides low on-  ID = 10.2A
state resistance, high switching performance and excellent  RDS(ON) ≤ 0.28Ω @ VGS = 10V
quality.

These devices are suitable device for SMPS, high Speed Applications
switching and general purpose applications.
 Power Supply
 Motor Control
 High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 250 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 10.2 A
Continuous Drain Current o
ID
TC=100 C 6.4 A
Pulsed Drain Current(1) IDM 40.8 A
o
TC=25 C 69.4 W
Power Dissipation o
PD
Derivate above 25 C 0.56 W/ oC
(3)
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns
(1)
Repetitive Avalanche Energy EAR 6.94 mJ
(1)
Avalanche current IAR 10.2 A
Single Pulse Avalanche Energy(4) EAS 550 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(1) RθJA 110 o
C/W
Thermal Resistance, Junction-to-Case(1) RθJC 1.8

Nov. 2011 Version 1.0 1 MagnaChip Semiconductor Ltd.

 MDD14N25C N-channel MOSFET 250V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDD14N25CRH -55~150 C D-pak Reel & Tape Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 250 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 250V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.1 A - 0.22 0.28 Ω
Forward Transconductance gfs VDS = 30V, ID = 5.1A - 8.5 - S
Dynamic Characteristics
Total Gate Charge Qg - 20.0 -
Gate-Source Charge Qgs VDS = 200V, ID = 14.0A, VGS = 10V - 4.5 - nC
Gate-Drain Charge Qgd - 8.9 -
Input Capacitance Ciss - 741 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 15 - pF
Output Capacitance Coss - 142 -
Turn-On Delay Time td(on) - 13 -
Rise Time tr VGS = 10V, VDS = 125V, ID = 14.0A, - 42 -
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 44 -
Fall Time tf - 28 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - - 10.2 A
Source Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 10.2A, VGS = 0V - - 1.4 V
Body Diode Reverse Recovery Time trr - 174 - ns
IF = 14.0A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery Charge Qrr - 1.0 - μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C.
3. ISD ≤10.2A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=8.5mH, IAS=10.2A, VDD=50V, Rg=26Ohm, Starting TJ=25oC

Nov. 2011 Version 1.0 2 MagnaChip Semiconductor Ltd.

 MDD14N25C N-channel MOSFET 250V
35
Vgs=4.0V 0.8
=4.5V
30 =5.0V
=5.5V 0.7
=6.0V
25
=6.5V
ID,Drain Current [A]

=7.0V 0.6

RDS(ON) [Ω ]
20 =7.5V
=8.0V
=10.0V 0.5
15 =15.0V
=20.0V
0.4
VGS=10.0V
10
0.3 VGS=20V
Notes
5 1. 250㎲ Pulse Test
2. TC=25 ℃
0.2
0
0 5 10 15 -5 0 5 10 15 20 25 30 35

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :
1. VGS = 10 V
Drain-Source Breakdown Voltage
1. VGS = 0 V
2.5 2. ID = 5.1 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 -50 0 50 100 150
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.
Temperature Temperature

* Notes ; ※ Notes :
1. VGS = 0 V
1. Vds=30V
2.250s Pulse test
Reverse Drain Current [A]

10
10
150
℃
150 ℃
ID(A)

25
IDR

25℃
℃

-55 ℃

1
1
3 4 5 6 7 8 9 0.2 0.4 0.6 0.8 1.0 1.2
VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Nov. 2011 Version 1.0 3 MagnaChip Semiconductor Ltd.

 MDD14N25C N-channel MOSFET 250V
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 14A 1400 Coss Coss = Cds + Cgd
50V Crss = Cgd
125V
200V 1200
VGS, Gate-Source Voltage [V]

8 Ciss
1000

Capacitance [pF]
6
800

4 600
※ Notes ;
1. VGS = 0 V
400
2 Crss 2. f = 1 MHz

200

0
0
0 2 4 6 8 10 12 14 16 18 20 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
Operation in This Area
is Limited by R DS(on) 10 s 10

100 s
1 1 ms
10 8
10 ms
ID, Drain Current [A]
ID, Drain Current [A]

100 ms
DC
6
0
10

-1
10
2
Single Pulse
TJ=Max rated
TC=25 ℃

0
-2 25 50 75 100 125 150
10
-1 0 1 2
10 10 10 10 TC, Case Temperature [ ℃ ]
VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

7000

single Pulse
10
0 D=0.5 6000 RthJC = 1.8 /W ℃

TC = 25 ℃

0.2 5000
Thermal Response

Power (W)

0.1 4000
Zθ JC(t),

0.05
10
-1 3000
0.02
0.01 2000
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 1000
RΘ JC=1.8 /W
℃

single pulse

10
-2 0
10
-5 -4
10
-3
10
-2
10 10
-1
10
0 1
10
1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Nov. 2011 Version 1.0 4 MagnaChip Semiconductor Ltd.

 MDD14N25C N-channel MOSFET 250V
Physical Dimension

D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified

Nov. 2011 Version 1.0 5 MagnaChip Semiconductor Ltd.

 MDD14N25C N-channel MOSFET 250V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Nov. 2011 Version 1.0 6 MagnaChip Semiconductor Ltd.