JP4581848B2 - 光素子 - Google Patents
光素子 Download PDFInfo
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- JP4581848B2 JP4581848B2 JP2005159517A JP2005159517A JP4581848B2 JP 4581848 B2 JP4581848 B2 JP 4581848B2 JP 2005159517 A JP2005159517 A JP 2005159517A JP 2005159517 A JP2005159517 A JP 2005159517A JP 4581848 B2 JP4581848 B2 JP 4581848B2
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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Description
基板と、
前記基板の上方に形成され、光が出射又は入射する上面を有する柱状部と、
前記基板の上方において少なくとも前記柱状部の周囲を含む領域に形成された第1の保護層と、
前記第1の保護層の上方に形成された樹脂層と、
前記樹脂層の上方に形成された第2の保護層と、
前記柱状部の上面と電気的に接続された電極と、
を含み、
前記第1及び第2の保護層は、前記樹脂層よりも硬い材質からなる。
前記電極は、前記柱状部の上面から前記樹脂層の上方に延出して形成され、かつ前記樹脂層の上方にパッド部を有していてもよい。
前記第1の保護層は、前記柱状部の側面、及び前記柱状部の上面の端部に形成されていてもよい。
前記第2の保護層は、前記樹脂層と前記電極の間に介在していてもよい。
前記第2の保護層は、前記第1の保護層及び前記樹脂層よりも、前記柱状部の上面の内側に至るように形成されていてもよい。
前記第2の保護層は、前記電極の上方に形成されていてもよい。
前記第2の保護層は、前記第1の保護層、前記樹脂層及び前記電極よりも、前記柱状部の上面の内側に至るように形成されていてもよい。
前記樹脂層と前記電極の間に介在して形成された第3の保護層をさらに含み、
前記第3の保護層は、前記樹脂層よりも硬い材質からなるものであってもよい。
前記第1及び第2の保護層の少なくとも一方は、前記柱状部の上面の前記電極よりも、前記柱状部の上面の内側の領域を被覆していてもよい。
前記第1及び第2の保護層のいずれもが、前記柱状部の上面の前記電極よりも、前記柱状部の上面の内側の領域を被覆しており、
前記第1及び第2の保護層の屈折率は異なっていてもよい。
前記第1及び第2の保護層の少なくとも一方は、珪素と、酸素又は窒素との化合物を含むものであってもよい。
図1は、本発明の実施の形態に係る光素子の平面図であり、図2は、図1のII−II線断面図である。
図3〜図11は、本発明の実施の形態に係る光素子の製造方法を示す図である。
図12〜図14は、本発明の実施の形態に係る変形例を示す図である。以下の変形例では、上述した形態と異なる点について説明する。
124…活性層 125…電流狭窄層 126…第2のミラー 128…光学面
130…柱状部 132…上面 140…第1の保護層 150…樹脂層
160…第2の保護層 170…電極 172…パッド部 180…他の電極
200,202,204…光素子 210…第2の保護層 220…電極
222…パッド部 230…第3の保護層 240…第1の保護層
250…第2の保護層
Claims (2)
- 基板と、
前記基板の上方に形成され、上面に光が出射又は入射する光学面領域を有する柱状部と、
前記基板の上方において少なくとも前記柱状部の側面及びその外周部を含む領域に形成された第1の保護層と、
前記第1の保護層の上方に形成された樹脂層と、
前記樹脂層上に形成され外部との電気的接続部であるパッド部と、
前記柱状部の上面から、前記樹脂層上に延出して形成され、前記パッド部と電気的に接続される電極と、
前記樹脂層及び前記電極上に形成された第2の保護層と、
を含み、
前記第1及び第2の保護層は、前記樹脂層よりも硬く、屈折率が相違する材質で、前記光学面全域を被覆していることを特徴とする光素子。 - 請求項1に記載の光素子において、
前記第1及び第2の保護層の少なくとも一方は、珪素と、酸素又は窒素との化合物を含む、光素子。
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JP2005159517A JP4581848B2 (ja) | 2005-05-31 | 2005-05-31 | 光素子 |
US11/379,852 US7342259B2 (en) | 2005-05-31 | 2006-04-24 | Optical element |
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JP2005159517A JP4581848B2 (ja) | 2005-05-31 | 2005-05-31 | 光素子 |
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JP4581848B2 true JP4581848B2 (ja) | 2010-11-17 |
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JP (1) | JP4581848B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008300557A (ja) * | 2007-05-30 | 2008-12-11 | Mitsubishi Electric Corp | 半導体装置 |
JP2009094332A (ja) * | 2007-10-10 | 2009-04-30 | Fuji Xerox Co Ltd | 面発光型半導体レーザ装置およびその製造方法 |
US8570649B2 (en) * | 2009-10-29 | 2013-10-29 | California Institute Of Technology | Dual-mode raster point scanning/light sheet illumination microscope |
JP5527714B2 (ja) * | 2009-11-18 | 2014-06-25 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5585940B2 (ja) | 2010-04-22 | 2014-09-10 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法 |
JP5694075B2 (ja) * | 2011-07-12 | 2015-04-01 | 日本電信電話株式会社 | 半導体レーザ |
JP2018157065A (ja) * | 2017-03-17 | 2018-10-04 | 住友電気工業株式会社 | 面発光半導体レーザ |
JP6862983B2 (ja) * | 2017-03-23 | 2021-04-21 | 住友電気工業株式会社 | 半導体光素子及びその製造方法 |
JP2018207008A (ja) * | 2017-06-07 | 2018-12-27 | 住友電気工業株式会社 | 面発光半導体レーザを作製する方法 |
US11522344B2 (en) | 2018-03-28 | 2022-12-06 | Lumentum Operations Llc | Optimizing a layout of an emitter array |
US10720758B2 (en) * | 2018-03-28 | 2020-07-21 | Lumentum Operations Llc | Emitter array with shared via to an ohmic metal shared between adjacent emitters |
DE102020117238A1 (de) * | 2020-06-30 | 2021-12-30 | First Sensor AG | Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120775A (ja) * | 1989-10-03 | 1991-05-22 | Nippon Telegr & Teleph Corp <Ntt> | 埋め込み構造半導体レーザおよびその製造方法 |
JP2000012962A (ja) * | 1998-06-23 | 2000-01-14 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ及びその作製方法 |
JP2001168462A (ja) * | 1999-12-10 | 2001-06-22 | Hittsu Kenkyusho:Kk | 半導体多層膜反射鏡、およびこれを用いた半導体発光素子 |
JP2001284722A (ja) * | 2000-03-29 | 2001-10-12 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
JP2002335045A (ja) * | 2001-03-08 | 2002-11-22 | Ricoh Co Ltd | 面発光半導体レーザ素子及び光伝送システム |
JP2003051456A (ja) * | 2001-08-07 | 2003-02-21 | Furukawa Electric Co Ltd:The | Al含有化合物半導体層のエピタキシャル成長方法 |
JP2005136177A (ja) * | 2003-10-30 | 2005-05-26 | Toyoda Gosei Co Ltd | Iii−v族窒化物半導体素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528071A (en) * | 1990-01-18 | 1996-06-18 | Russell; Jimmie L. | P-I-N photodiode with transparent conductor n+layer |
JP2004031633A (ja) | 2002-06-26 | 2004-01-29 | Ricoh Co Ltd | 面発光半導体レーザ素子及び光伝送システム |
JP4232034B2 (ja) * | 2004-07-01 | 2009-03-04 | セイコーエプソン株式会社 | 面発光型半導体レーザの製造方法 |
JP4164685B2 (ja) * | 2004-07-06 | 2008-10-15 | セイコーエプソン株式会社 | 光素子及びその製造方法 |
-
2005
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- 2006-04-24 US US11/379,852 patent/US7342259B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120775A (ja) * | 1989-10-03 | 1991-05-22 | Nippon Telegr & Teleph Corp <Ntt> | 埋め込み構造半導体レーザおよびその製造方法 |
JP2000012962A (ja) * | 1998-06-23 | 2000-01-14 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ及びその作製方法 |
JP2001168462A (ja) * | 1999-12-10 | 2001-06-22 | Hittsu Kenkyusho:Kk | 半導体多層膜反射鏡、およびこれを用いた半導体発光素子 |
JP2001284722A (ja) * | 2000-03-29 | 2001-10-12 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
JP2002335045A (ja) * | 2001-03-08 | 2002-11-22 | Ricoh Co Ltd | 面発光半導体レーザ素子及び光伝送システム |
JP2003051456A (ja) * | 2001-08-07 | 2003-02-21 | Furukawa Electric Co Ltd:The | Al含有化合物半導体層のエピタキシャル成長方法 |
JP2005136177A (ja) * | 2003-10-30 | 2005-05-26 | Toyoda Gosei Co Ltd | Iii−v族窒化物半導体素子 |
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JP2006339247A (ja) | 2006-12-14 |
US7342259B2 (en) | 2008-03-11 |
US20060269666A1 (en) | 2006-11-30 |
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