JP3554432B2 - Method for manufacturing plasma display panel - Google Patents
Method for manufacturing plasma display panel Download PDFInfo
- Publication number
- JP3554432B2 JP3554432B2 JP05455796A JP5455796A JP3554432B2 JP 3554432 B2 JP3554432 B2 JP 3554432B2 JP 05455796 A JP05455796 A JP 05455796A JP 5455796 A JP5455796 A JP 5455796A JP 3554432 B2 JP3554432 B2 JP 3554432B2
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- Prior art keywords
- furnace
- glass substrate
- sealing
- glass substrates
- discharge gas
- Prior art date
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- Expired - Fee Related
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- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Description
【0001】
【発明の属する技術分野】
本発明はプラズマディスプレイパネルの製造方法に関するものである。
【0002】
【従来の技術】
プラズマディスプレイパネルの製造方法として種々の方法が提案されているが、そのうち代表的なものとして下記のものがある。
すなわち、まず、表面ガラス基板と背面ガラス基板との各対向面に電極等を設けるとともに表面ガラス基板の外側部に貫通孔を設け、かつ、このガラス基板の表面に前記貫通孔と連通するように給排気用ガラス管であるチップ管を取り付ける。そして、前記両ガラス基板の少なくとも一方の対向面であって前記貫通孔より外側に低融点ガラス等の封着剤を塗布する。
その後、両ガラス基板の電極を対向かつ直交するように重ねてクリップ等拘束治具で両者を固定し、封着炉で封着剤を加熱溶融することにより前記両ガラス基板を封着一体化してパネルとする。
【0003】
つぎに、前記封着一体化したパネルのチップ管に給排気管を接続するとともに、この給排気管を放電ガス用ボンベと真空ポンプとに切換可能に連通し、排気炉に装入して前記パネルを加熱するとともに各パネル内部を真空ポンプで所定真空度に真空排気して脱ガスを行なう。その後、パネル内部に放電ガス、たとえば、ネオン(Ne)、アルゴン(Ar)あるいはキセノン(Xe)、またはこれらの混合ガスを400〜600Torr程度まで封入する。
前記封入作業が終われば、パネルを排気炉から抽出し、前記チップ管を封じ切って所定のプラズマディスプレイパネルとするものである。
【0004】
【発明が解決しようとする課題】
しかしながら、前記従来方法においては、両ガラス基板の封着処理後、パネル内部の真空排気に引続き、放電ガスの封入作業を行なうが、前記パネル内部は、実質的に両ガラス基板の合わせ面で形成される100〜200μmの非常に狭い隙間であり、かつ、この隙間(空間)には100〜200μm未満の隔壁が存在するため、脱ガスのための排気に非常に時間を要して生産性が非常に悪いとともに、排気が不十分となってパネル内部の放電ガス純度が低くなるという課題を有していた。
したがって、本発明の目的は、パネル内部の排気(脱ガス)を短時間で行なえるプラズマディスプレイの製造方法を提供することである。
【0005】
【課題を解決するための手段】
本発明にかかるプラズマディスプレイパネルの製造方法は、前記目的を達成するために、請求項1の発明は、表面ガラス基板と背面ガラス基板とを所定間隔をもってその電極が対向かつ直交するように重ね合わせる工程と、この重ね合わせたガラス基板を炉内に位置させて当該炉内を所定温度下で真空排気する工程と、当該炉内を封着温度まで昇温して両ガラス基板を封着する工程と、ガラス基板封着後に炉内を冷却して両ガラス基板を冷却する工程と、冷却完了後に前記いずれかのガラス基板に取り付けたチップ管から放電ガスを供給して封入する工程と、放電ガスを封入後チップ管を封じ切る工程とからなるものである。
【0006】
【発明の実施の形態】
つぎに、本発明の実施形態を図1,図2により説明する。
まず、従来同様、対向面に電極および隔壁を設けた表面ガラス基板Aと背面ガラス基板Bとを排気炉T内に設置された載置機構1に取り付けて密閉炉T内に位置させる。前記載置機構1は、図2に示すように、4本(図では手前の2本のみが現われている)のスライドガイド2に所定間隔にて複数の背面ガラス基板用セッタ3が固定されており、また、各背面ガラス基板用セッタ3の上方には表面ガラス基板用セッタ4がスライドガイド2に摺動自在に装着され、かつ、各表面ガラス基板用セッタ4は駆動ロッド5に前記背面ガラス基板用セッタ3と同一間隔で固定され、駆動ロッド5とともに上下動可能となっている。一方、前記駆動ロッド5はベローズ真空シール装置6を介して炉本体10の天井部を貫通し、モータ7で回転するボールネジ機構8により上下動するようになっている。
【0007】
また、炉本体10の下部は配管11によって図示しない真空排気装置と切換弁V1を介して接続するとともに、炉内には配管12が炉本体10の下部を貫通して設けてあり、この配管12は放電ガスボンベ、たとえば、ネオン(Ne)、アルゴン(Ar)、あるいはキセノン(Xe)のボンベ13に切換弁V2を介して接続されている。また、前記配管12の炉内側には複数の分岐管12aが設けてある。
【0008】
排気炉Tは前記構成からなるため、排気炉Tの装入扉(図示せず)を開き(図1の状態)、前記背面ガラス基板Bの前記対向面の外周部に結晶性低融点ガラス等の封着剤20を塗布し、この背面ガラス基板Bを対向面を上方にして前記載置機構1の背面ガラス基板用セッタ3に取り付ける。一方、表面ガラス基板Aはその対向面を下方にして表面ガラス基板用セッタ4に装着する。
【0009】
なお、前記背面ガラス基板Bの封着剤20の塗布部分より内方で装入扉側には、従来のものと同様貫通孔が設けられ、この貫通孔を介して前記対向面に連通するチップ管21が前記封着剤20より溶融温度の高い封着剤によりあらかじめ取り付けてあり、また、このチップ管21は背面ガラス基板用セッタ3を貫通している。
【0010】
つぎに、前述のようにして両ガラス基板A,Bを載置機構1に取り付けると、チップ管21を配管12の各分岐管12aに接続し、前記モータ7を駆動して両ガラス基板A,B間に所定の隙間x(0.1〜0.2mm)が形成されるようにセットする。
その後、装入扉を閉じて、図示しないヒータにより炉内を300〜400℃に加熱するとともに、切換弁V1を開として真空排気装置により炉内を排気し、同時に両ガラス基板A,Bの脱ガスを行なう。なお、前記切換弁V2は閉である。この場合、炉の昇温速度は5〜15℃/min、排気は10−6〜10−7Torr程度である。また、前記脱ガスをさらに確実に行なうために、両ガラス基板A,Bを300〜400℃程度の封着剤軟化点付近まで昇温し、その後、一定時間均熱保持してもよい。
【0011】
前記のようにして、炉内を所定真空度とし炉内排気と両ガラス基板A,Bからの脱ガスが完了すると、炉内をさらに加熱して封着剤20の溶融温度である400〜500℃に上昇させ、モータ7を駆動して駆動ロッド5を下降させて表面ガラス基板Aを背面ガラス基板B上に圧着させ、この圧着工程において両ガラス基板A,Bを封着してパネルとする。
前述のようにして、封着工程が完了すると、炉内にN2ガス等の不活性ガスを図示しない供給管から供給し、1〜10℃/minの冷却速度でガラス基板A,Bの冷却を行なう。
【0012】
前記冷却工程完了後、切換弁V1を閉とするとともに切換弁V2を開として配管12、チップ管21から各パネル内に放電ガスを規定圧力(400〜760Torr)封入する。この場合、パネル内は真空となっているため、放電ガスの封入も極めて短時間で行なわれる。
前記パネル内への放電ガスの封入が完了すると、排気炉Tの装入扉を開き、チップ管21をバーナ等で溶融しつつ管径を絞り、封じ止って所定のプラズマディスプレイパネルとし、各パネルを炉外に取り出すものである。
【0013】
なお、図1に示すように、前記配管12に切換弁V3を介して真空排気装置(図示せず)に接続しておき、放電ガスの封入に先立ち、前記封着工程後の冷却期間中あるいは冷却完了後、パネル内をさらに真空排気し、その後、切換弁V2,V3を切換えて放電ガスを供給してもよい。このようにすると、パネル内の封入放電ガスをより純度の高いものとすることができる。
【0014】
なお、前記実施の形態においては、チップ管21を予め背面ガラス基板Bに取り付けて炉内に装入する場合について説明したが、チップ管21は表面ガラス基板Aに設けてもよく、また、チップ管21とガラス基板A,Bとの取り付けは、チップ管21とガラス基板A,Bとの取り付け部に封着剤20を組込んでおき、ガラス基板A,Bの封着工程の加熱時に同時に封着してもよい。
さらに、ガラス基板A,B、封着剤20等を予め封着温度より低い温度で加熱して乾燥、仮焼成してもよい。この場合、アウトガスが減少して炉内の汚染を軽減し、炉内雰囲気の純度を向上させることができるとともに封着の安定性が向上する。
【0015】
前記実施の形態ではバッチ処理で説明したが、マッフル内にガラス基板を位置させ、このマッフルを炉内で連続的あるいは間欠的に搬送して処理するようにしてもよい。
【0016】
【発明の効果】
以上の説明で明らかなように、請求項1の発明によれば、表面ガラス基板と背面ガラス基板とは、封着に先立って所定隙間をもって所定温度下で全体を加熱し、炉内を排気することにより脱ガスを図るため、脱ガス時間が短く、かつ、確実に行なうことができ、生産性をそれだけ向上させることができる。
【図面の簡単な説明】
【図1】本発明に使用する排気炉の断面図。
【図2】図1の載置機構の説明図。
【符号の説明】
1…載置機構、10…炉本体、13…放電ガスボンベ、20…封着剤、21…チップ管、A…表面ガラス基板、B…背面ガラス基板、T…密閉炉。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a plasma display panel.
[0002]
[Prior art]
Various methods have been proposed as a method of manufacturing a plasma display panel, and the following are typical ones.
That is, first, an electrode or the like is provided on each of the opposing surfaces of the front glass substrate and the rear glass substrate, and a through hole is provided on an outer portion of the front glass substrate, and the surface of the glass substrate communicates with the through hole. A tip tube, which is a glass tube for air supply and exhaust, is attached. Then, a sealing agent such as low-melting glass is applied to at least one of the opposing surfaces of the two glass substrates and outside the through hole.
Then, the electrodes of both glass substrates are overlapped so as to be opposed and orthogonal to each other, and both are fixed with a restraining jig such as a clip, and the two glass substrates are sealed and integrated by heating and melting a sealing agent in a sealing furnace. Panel.
[0003]
Next, a supply / exhaust pipe was connected to the chip pipe of the panel integrated with the sealing, and the supply / exhaust pipe was connected to a discharge gas cylinder and a vacuum pump so as to be switchable, and was charged into an exhaust furnace. The panels are heated and the inside of each panel is evacuated to a predetermined vacuum level by a vacuum pump to perform degassing. Thereafter, a discharge gas, for example, neon (Ne), argon (Ar) or xenon (Xe), or a mixed gas thereof is sealed up to about 400 to 600 Torr inside the panel.
When the enclosing operation is completed, the panel is extracted from the exhaust furnace, and the chip tube is sealed to obtain a predetermined plasma display panel.
[0004]
[Problems to be solved by the invention]
However, in the above-described conventional method, after the sealing process of the two glass substrates, the discharge gas is encapsulated after the evacuation of the inside of the panel, but the inside of the panel is formed substantially by the mating surface of the two glass substrates. Since the gap (space) is very narrow and the gap (space) has a partition wall of less than 100 to 200 μm, it takes a very long time to exhaust gas for degassing and the productivity is increased. In addition to being very bad, there is a problem that the exhaust gas is insufficient and the purity of the discharge gas inside the panel is reduced.
Therefore, an object of the present invention is to provide a method of manufacturing a plasma display that can exhaust (degas) the inside of a panel in a short time.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, in the method of manufacturing a plasma display panel according to the present invention, according to the first aspect of the present invention, the front glass substrate and the rear glass substrate are overlapped at predetermined intervals such that their electrodes are opposed and orthogonal to each other. A step of positioning the stacked glass substrates in a furnace and evacuating the furnace at a predetermined temperature under a predetermined temperature, and a step of heating the furnace to a sealing temperature to seal both glass substrates. A step of cooling the inside of the furnace after sealing the glass substrates to cool both glass substrates, a step of supplying a discharge gas from a chip tube attached to any one of the glass substrates after the completion of cooling, and enclosing the discharge gas, And sealing the chip tube after sealing.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, an embodiment of the present invention will be described with reference to FIGS.
First, as in the conventional case, the front glass substrate A and the rear glass substrate B provided with electrodes and partitions on the opposing surfaces are mounted on the mounting mechanism 1 installed in the exhaust furnace T and positioned in the closed furnace T. As shown in FIG. 2, the mounting mechanism 1 includes a plurality of back glass substrate setters 3 fixed at predetermined intervals to four slide guides 2 (only two front guides are shown in the figure). A
[0007]
The lower portion of the
[0008]
Since the exhaust furnace T has the above-described configuration, the charging door (not shown) of the exhaust furnace T is opened (the state of FIG. 1), and the outer peripheral portion of the facing surface of the rear glass substrate B is made of crystalline low melting point glass or the like. Is applied, and the rear glass substrate B is mounted on the rear glass substrate setter 3 of the mounting mechanism 1 with the facing surface facing upward. On the other hand, the front glass substrate A is mounted on the front
[0009]
A through-hole is provided on the loading door side of the rear glass substrate B on the side closer to the loading door than the portion where the
[0010]
Next, when the two glass substrates A and B are attached to the mounting mechanism 1 as described above, the
Thereafter, the charging door is closed, the inside of the furnace is heated to 300 to 400 ° C. by a heater (not shown), the switching valve V1 is opened, and the inside of the furnace is evacuated by the vacuum exhaust device. Perform gas. The switching valve V2 is closed. In this case, the heating rate of the furnace is 5 to 15 ° C./min, and the exhaust is about 10 −6 to 10 −7 Torr. Further, in order to more reliably perform the degassing, the temperature of both glass substrates A and B may be raised to around the softening point of the sealing agent of about 300 to 400 ° C., and thereafter, the glass substrate may be kept at a uniform temperature for a certain time.
[0011]
As described above, when the inside of the furnace is set to a predetermined degree of vacuum and the evacuation of the furnace and the degassing from both glass substrates A and B are completed, the inside of the furnace is further heated to the melting temperature of the
As described above, when the sealing step is completed, an inert gas such as N2 gas is supplied into the furnace from a supply pipe (not shown) to cool the glass substrates A and B at a cooling rate of 1 to 10 ° C./min. Do.
[0012]
After the completion of the cooling step, the switching valve V1 is closed and the switching valve V2 is opened to discharge gas from the
When the filling of the discharge gas into the panel is completed, the charging door of the exhaust furnace T is opened, and the
[0013]
As shown in FIG. 1, the
[0014]
In the above embodiment, the case where the
Further, the glass substrates A and B, the sealing
[0015]
Although a batch process has been described in the above embodiment, a glass substrate may be positioned in a muffle and the muffle may be conveyed continuously or intermittently in a furnace for processing.
[0016]
【The invention's effect】
As is apparent from the above description, according to the first aspect of the present invention, the entire surface glass substrate and the rear glass substrate are heated at a predetermined temperature with a predetermined gap before the sealing, and the inside of the furnace is exhausted. As a result, degassing is performed, so that the degassing time can be shortened and the gas can be reliably discharged, and the productivity can be improved accordingly.
[Brief description of the drawings]
FIG. 1 is a sectional view of an exhaust furnace used in the present invention.
FIG. 2 is an explanatory view of the mounting mechanism of FIG. 1;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Mounting mechanism, 10 ... Furnace main body, 13 ... Discharge gas cylinder, 20 ... Sealing agent, 21 ... Chip tube, A ... Surface glass substrate, B ... Back glass substrate, T ... Closed furnace.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP05455796A JP3554432B2 (en) | 1996-01-11 | 1996-03-12 | Method for manufacturing plasma display panel |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP314996 | 1996-01-11 | ||
JP8-3149 | 1996-01-11 | ||
JP05455796A JP3554432B2 (en) | 1996-01-11 | 1996-03-12 | Method for manufacturing plasma display panel |
Publications (2)
Publication Number | Publication Date |
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JPH09251839A JPH09251839A (en) | 1997-09-22 |
JP3554432B2 true JP3554432B2 (en) | 2004-08-18 |
Family
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JP05455796A Expired - Fee Related JP3554432B2 (en) | 1996-01-11 | 1996-03-12 | Method for manufacturing plasma display panel |
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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KR19990043617A (en) * | 1997-11-29 | 1999-06-15 | 김영남 | Manufacturing Method of Plasma Display Device |
WO1999066525A1 (en) | 1998-06-15 | 1999-12-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel with superior light-emitting characteristics, and method and apparatus for producing the plasma display panel |
JP3465634B2 (en) | 1998-06-29 | 2003-11-10 | 富士通株式会社 | Method for manufacturing plasma display panel |
US6848964B1 (en) | 1998-09-14 | 2005-02-01 | Matsushita Electric Industrial Co., Ltd. | Sealing method and apparatus for manufacturing high-performance gas discharge panel |
WO2000016364A1 (en) * | 1998-09-14 | 2000-03-23 | Matsushita Electric Industrial Co., Ltd. | Sealing method and apparatus for manufacturing high-performance gas discharge panel |
JP4579487B2 (en) * | 1998-09-14 | 2010-11-10 | パナソニック株式会社 | Method for manufacturing gas discharge panel |
KR100309275B1 (en) * | 1998-09-15 | 2001-12-17 | 구자홍 | PDP manufacturing method and PDP gas injection and exhaust machine |
KR100428970B1 (en) * | 1998-12-15 | 2004-06-16 | 삼성에스디아이 주식회사 | Method and machine for manufacturing plasma display device |
WO2000072351A1 (en) * | 1999-05-20 | 2000-11-30 | Matsushita Electric Industrial Co., Ltd. | Method of producing gas discharge panel |
JP4759882B2 (en) * | 2000-08-24 | 2011-08-31 | パナソニック株式会社 | Method for manufacturing plasma display panel |
KR100364743B1 (en) | 2000-11-29 | 2002-12-16 | 엘지전자 주식회사 | Plasma display panel and fabricating process of the same |
JP2002245941A (en) * | 2001-02-13 | 2002-08-30 | Nec Corp | Manufacturing method of plasma display panel |
JP4674415B2 (en) * | 2001-05-30 | 2011-04-20 | パナソニック株式会社 | Vacuum container manufacturing method and image display device manufacturing method |
KR100529071B1 (en) | 2002-11-26 | 2005-11-15 | 삼성에스디아이 주식회사 | Plasma display panel having sealing structure for reducing noise |
JP4570367B2 (en) * | 2004-02-02 | 2010-10-27 | パナソニック株式会社 | Method for manufacturing plasma display panel |
WO2009011468A1 (en) * | 2007-07-13 | 2009-01-22 | World Tech Co., Ltd. | Manufacturing method for plain shape neon sign device without gas injection pipe |
JP2012104228A (en) * | 2010-11-05 | 2012-05-31 | Panasonic Corp | Method for manufacturing image display device |
CN107993910B (en) * | 2017-12-28 | 2024-02-06 | 宜昌华耀科技有限公司 | Ultraviolet tube packaging equipment and packaging technology |
-
1996
- 1996-03-12 JP JP05455796A patent/JP3554432B2/en not_active Expired - Fee Related
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JPH09251839A (en) | 1997-09-22 |
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