JPH09251839A - Manufacture of plasma display panel - Google Patents
Manufacture of plasma display panelInfo
- Publication number
- JPH09251839A JPH09251839A JP5455796A JP5455796A JPH09251839A JP H09251839 A JPH09251839 A JP H09251839A JP 5455796 A JP5455796 A JP 5455796A JP 5455796 A JP5455796 A JP 5455796A JP H09251839 A JPH09251839 A JP H09251839A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- glass substrates
- sealing
- glass substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマディスプレ
イパネルの製造方法に関するものである。The present invention relates to a method for manufacturing a plasma display panel.
【０００２】[0002]
【従来の技術】プラズマディスプレイパネルの製造方法
として種々の方法が提案されているが、そのうち代表的
なものとして下記のものがある。すなわち、まず、表面
ガラス基板と背面ガラス基板との各対向面に電極等を設
けるとともに表面ガラス基板の外側部に貫通孔を設け、
かつ、このガラス基板の表面に前記貫通孔と連通するよ
うに給排気用ガラス管であるチップ管を取り付ける。そ
して、前記両ガラス基板の少なくとも一方の対向面であ
って前記貫通孔より外側に低融点ガラス等の封着剤を塗
布する。その後、両ガラス基板の電極を対向かつ直交す
るように重ねてクリップ等拘束治具で両者を固定し、封
着炉で封着剤を加熱溶融することにより前記両ガラス基
板を封着一体化してパネルとする。2. Description of the Related Art Various methods have been proposed for manufacturing a plasma display panel, of which the following are typical ones. That is, first, an electrode or the like is provided on each of the facing surfaces of the front glass substrate and the back glass substrate, and a through hole is provided on the outer portion of the front glass substrate,
A chip tube, which is a glass tube for air supply and exhaust, is attached to the surface of the glass substrate so as to communicate with the through hole. Then, a sealing agent such as low-melting glass is applied to at least one of the opposing surfaces of the two glass substrates and outside the through hole. After that, the electrodes of both glass substrates are overlapped so as to face each other and are orthogonal to each other, and both are fixed by a restraint jig such as a clip, and the both glass substrates are sealed and integrated by heating and melting the sealing agent in a sealing furnace. The panel.
【０００３】つぎに、前記封着一体化したパネルのチッ
プ管に給排気管を接続するとともに、この給排気管を放
電ガス用ボンベと真空ポンプとに切換可能に連通し、排
気炉に装入して前記パネルを加熱するとともに各パネル
内部を真空ポンプで所定真空度に真空排気して脱ガスを
行なう。その後、パネル内部に放電ガス、たとえば、ネ
オン（Ｎｅ）、アルゴン（Ａｒ）あるいはキセノン（Ｘ
ｅ）、またはこれらの混合ガスを４００〜６００Ｔｏｒ
ｒ程度まで封入する。前記封入作業が終われば、パネル
を排気炉から抽出し、前記チップ管を封じ切って所定の
プラズマディスプレイパネルとするものである。[0003] Next, a supply / exhaust pipe is connected to the chip pipe of the panel integrated with the sealing, and the supply / exhaust pipe is connected to a discharge gas cylinder and a vacuum pump so as to be switchable, and is charged into an exhaust furnace. Then, the panels are heated and the inside of each panel is evacuated to a predetermined degree of vacuum by a vacuum pump to perform degassing. After that, a discharge gas such as neon (Ne), argon (Ar) or xenon (X
e), or mixed gas of these is 400 to 600 Tor
Enclose up to r. When the enclosing work is completed, the panel is extracted from the exhaust furnace and the chip tube is completely sealed to obtain a predetermined plasma display panel.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、前記従
来方法においては、両ガラス基板の封着処理後、パネル
内部の真空排気に引続き、放電ガスの封入作業を行なう
が、前記パネル内部は、実質的に両ガラス基板の合わせ
面で形成される１００〜２００μｍの非常に狭い隙間で
あり、かつ、この隙間（空間）には１００〜２００μｍ
未満の隔壁が存在するため、脱ガスのための排気に非常
に時間を要して生産性が非常に悪いとともに、排気が不
十分となってパネル内部の放電ガス純度が低くなるとい
う課題を有していた。したがって、本発明の第１の目的
は、パネル内部の排気（脱ガス）を短時間で行なえるプ
ラズマディスプレイの製造方法を提供することである。
また、前記従来方法では、チップ管が必要であるととも
にこのチップ管を精度よく表面ガラス基板に取り付けな
ければならない。さらに、表面ガラス基板と背面ガラス
基板とを固定する拘束治具および前記チップ管を真空ポ
ンプ等に接続する給排気管をも必要とする。つまり、前
記方法では多くの部材を必要とするばかりかそれら部材
の取り付け、接続等に多くの時間を必要とする。したが
って、本発明の第２の目的は、パネル内部の排気および
パネル内部への放電ガスの封入を極めて容易に、しかも
短時間で行なうことにより前記課題を解決するプラズマ
ディスプレイの製造方法を提供することである。However, in the above-mentioned conventional method, after the sealing treatment of both glass substrates, the discharge gas is enclosed following the evacuation of the inside of the panel, but the inside of the panel is substantially Is a very narrow gap of 100 to 200 μm formed on the mating surfaces of both glass substrates, and this gap (space) is 100 to 200 μm.
Since there is a partition wall of less than, there is a problem that it takes a very long time to exhaust gas for degassing and productivity is very poor, and exhaust gas is insufficient and the purity of the discharge gas inside the panel becomes low. Was. Therefore, a first object of the present invention is to provide a method of manufacturing a plasma display, which can exhaust (degas) the inside of the panel in a short time.
Further, in the above-mentioned conventional method, a chip tube is required and the chip tube must be attached to the surface glass substrate with high accuracy. Further, a restraint jig for fixing the front glass substrate and the rear glass substrate and a supply / exhaust pipe for connecting the chip pipe to a vacuum pump or the like are also required. That is, in the above method, not only a large number of members are required, but also a lot of time is required for mounting and connecting those members. Therefore, a second object of the present invention is to provide a method of manufacturing a plasma display, which solves the above problems by exhausting the inside of the panel and enclosing the discharge gas inside the panel very easily and in a short time. Is.
【０００５】[0005]
【課題を解決するための手段】本発明にかかるプラズマ
ディスプレイパネルの製造方法は、前記目的を達成する
ために、請求項１の発明では、表面ガラス基板と背面ガ
ラス基板とを所定間隔をもってその電極が対向かつ直交
するように重ね合わせる工程と、この重ね合わせたガラ
ス基板を炉内に位置させて当該炉内を所定温度下で真空
排気する工程と、当該炉内を封着温度まで昇温して両ガ
ラス基板を封着する工程と、ガラス基板封着後に炉内を
冷却して両ガラス基板を冷却する工程と、冷却完了後に
前記いずれかのガラス基板に取り付けたチップ管から放
電ガスを供給して封入する工程とからなるものである。
請求項２の発明では、表面ガラス基板と背面ガラス基板
とを所定間隔をもってその電極が対向かつ直交するよう
に重ね合わせる工程と、この重ね合わせたガラス基板を
炉内に位置させて当該炉内を所定温度下での真空排気に
引続き、不活性雰囲気中で加熱する工程と、当該炉内を
封着温度まで昇温して両ガラス基板を封着する工程と、
ガラス基板封着後に炉内を冷却して両ガラス基板を冷却
する工程と、ガラス基板間の空間を前記いずれからのガ
ラス基板に取り付けたチップ管から真空排気する工程
と、前記空間内に前記チップ管から放電ガスを供給して
封入する工程とからなるものである。請求項３の発明で
は、表面ガラス基板と背面ガラス基板とを所定間隔をも
ってその電極が対向かつ直交するように重ね合わせる工
程と、この重ね合わせたガラス基板を密閉炉内に位置さ
せて炉内空間を真空排気して前記ガラス基板間の空気を
排気する工程と、放電ガスを前記炉内空間に供給するこ
とで前記ガラス基板間に放電ガスを介在させる工程と、
前記炉内を所定温度まで昇温することにより前記ガラス
基板の外周に設けた封着剤により両ガラス基板を封着す
る工程とからなるものである。請求項４の発明では、前
記請求項３において、炉内圧をガラス基板間に封入した
放電ガスの圧力より高くすることにより封着時のガラス
基板への加圧を行なうものである。In order to achieve the above object, the method of manufacturing a plasma display panel according to the present invention is characterized in that, in the invention of claim 1, the surface glass substrate and the rear glass substrate are provided with electrodes at a predetermined interval. Are placed so that they face each other and are orthogonal to each other, a step of placing the stacked glass substrates in the furnace and evacuating the furnace at a predetermined temperature, and raising the temperature of the furnace to the sealing temperature. And sealing both glass substrates together, cooling the inside of the furnace by cooling the glass substrates after sealing the glass substrates, and supplying the discharge gas from the chip tube attached to one of the glass substrates after cooling is completed. And then encapsulating.
In the invention of claim 2, a step of stacking a front glass substrate and a back glass substrate so that their electrodes are opposed and orthogonal to each other at a predetermined interval, and positioning the stacked glass substrates in a furnace, Following vacuum evacuation at a predetermined temperature, a step of heating in an inert atmosphere, a step of raising the temperature in the furnace to a sealing temperature and sealing both glass substrates,
After sealing the glass substrates, cooling the inside of the furnace to cool both glass substrates; evacuating the space between the glass substrates from the chip tube attached to the glass substrate from any of the above; The process comprises supplying a discharge gas from a tube and sealing the discharge gas. According to the third aspect of the present invention, a step of stacking the front glass substrate and the rear glass substrate so that their electrodes face each other and are orthogonal to each other at a predetermined interval, and the stacked glass substrates are positioned in a closed furnace to form a furnace space. A step of evacuating the glass substrate to exhaust air between the glass substrates, and a step of interposing a discharge gas between the glass substrates by supplying a discharge gas into the furnace space,
And heating the inside of the furnace to a predetermined temperature to seal both glass substrates with a sealing agent provided on the outer periphery of the glass substrates. According to a fourth aspect of the invention, in the third aspect, the pressure in the glass substrate at the time of sealing is performed by making the furnace internal pressure higher than the pressure of the discharge gas sealed between the glass substrates.
【０００６】[0006]
【発明の実施の形態】つぎに、本発明の実施の第１形態
について説明する。まず、従来同様、対向面に電極およ
び隔壁を設けた表面ガラス基板Ａと背面ガラス基板Ｂと
を密閉炉Ｔ内に設置された載置機構１に取り付けて密閉
炉Ｔ内に位置させる。前記載置機構１は、図２に示すよ
うに、４本（図では手前の２本のみが現われている）の
スライドガイド２に所定間隔にて複数の背面ガラス基板
用セッタ３が固定されており、また、各背面ガラス基板
用セッタ３の上方には表面ガラス基板用セッタ４がスラ
イドガイド２に摺動自在に装着され、かつ、各表面ガラ
ス基板用セッタ４は駆動ロッド５に前記背面ガラス基板
用セッタ３と同一間隔で固定され、駆動ロッド５ととも
に上下動可能となっている。一方、前記駆動ロッド５は
ベローズ真空シール装置６を介して炉本体１０の天井部
を貫通し、モータ７で回転するボールネジ機構８により
上下動するようになっている。BEST MODE FOR CARRYING OUT THE INVENTION Next, a first embodiment of the present invention will be described. First, as in the conventional case, the front glass substrate A and the rear glass substrate B, which have electrodes and partition walls provided on the opposite surfaces, are attached to the mounting mechanism 1 installed in the closed furnace T and positioned in the closed furnace T. As shown in FIG. 2, the placement mechanism 1 has a plurality of rear glass substrate setters 3 fixed to four slide guides 2 (only the two front ones are shown in the figure) at predetermined intervals. Further, a setter 4 for front surface glass substrate is slidably mounted on the slide guide 2 above each setter 3 for rear surface glass substrate, and each setter 4 for front surface glass substrate is connected to the drive rod 5 by the rear glass. It is fixed at the same interval as the substrate setter 3 and can move up and down together with the drive rod 5. On the other hand, the drive rod 5 penetrates the ceiling portion of the furnace body 10 via a bellows vacuum seal device 6 and is vertically moved by a ball screw mechanism 8 rotated by a motor 7.
【０００７】また、炉本体１０の下部は配管１１によっ
て図示しない真空排気装置と切換弁Ｖ1を介して接続す
るとともに、炉内には配管１２が炉本体１０の下部を貫
通して設けてあり、この配管１２は放電ガスボンベ、た
とえば、ネオン（Ｎｅ）、アルゴン（Ａｒ）、あるいは
キセノン（Ｘｅ）のボンベ１３に切換弁Ｖ2を介して接
続されている。また、前記配管１２の炉内側には複数の
分岐管１２ａが設けてある。The lower part of the furnace body 10 is connected to a vacuum exhaust device (not shown) via a switching valve V 1 by a pipe 11, and a pipe 12 is provided in the furnace so as to penetrate the lower part of the furnace body 10. The pipe 12 is connected to a discharge gas cylinder, for example, a cylinder 13 of neon (Ne), argon (Ar), or xenon (Xe) via a switching valve V 2 . Further, a plurality of branch pipes 12a are provided inside the furnace of the pipe 12.
【０００８】密閉炉Ｔは前記構成からなるため、密閉炉
Ｔの装入扉（図示せず）を開き（図１の状態）、前記背
面ガラス基板Ｂの前記対向面の外周部に結晶性低融点ガ
ラス等の封着剤２０を塗布し、この背面ガラス基板Ｂを
対向面を上方にして前記載置機構１の背面ガラス基板用
セッタ３に取り付ける。一方、表面ガラス基板Ａはその
対向面を下方にして表面ガラス基板用セッタ４に装着す
る。Since the closed furnace T has the above-mentioned structure, the charging door (not shown) of the closed furnace T is opened (the state shown in FIG. 1), and the low crystallinity is formed on the outer peripheral portion of the opposite surface of the rear glass substrate B. A sealing agent 20 such as a melting point glass is applied, and the rear glass substrate B is attached to the rear glass substrate setter 3 of the mounting mechanism 1 with the facing surface facing upward. On the other hand, the front glass substrate A is mounted on the front glass substrate setter 4 with its facing surface facing downward.
【０００９】なお、前記背面ガラス基板Ｂの封着剤２０
の塗布部分より内方で装入扉側には、従来のものと同様
貫通孔が設けられ、この貫通孔を介して前記対向面に連
通するチップ管２１が前記封着剤２０より溶融温度の高
い封着剤によりあらかじめ取り付けてあり、また、この
チップ管２１は背面ガラス基板用セッタ３を貫通してい
る。Incidentally, the sealing agent 20 for the rear glass substrate B
A through hole is provided on the charging door side inward of the coated portion, as in the conventional case, and the chip tube 21 communicating with the facing surface through the through hole has a melting temperature higher than that of the sealing agent 20. The tip tube 21 is attached in advance with a high sealing agent, and the chip tube 21 penetrates the rear glass substrate setter 3.
【００１０】つぎに、前述のようにして両ガラス基板
Ａ，Ｂを載置機構１に取り付けると、チップ管２１を配
管１２の各分岐管１２ａに接続し、前記モータ７を駆動
して両ガラス基板Ａ，Ｂ間に所定の隙間ｘ（０．１〜
０．２ｍｍ）が形成されるようにセットする。その後、
装入扉を閉じて、図示しないヒータにより炉内を３００
〜４００℃に加熱するとともに、切換弁Ｖ1を開として
真空排気装置により炉内を排気し、同時に両ガラス基板
Ａ，Ｂの脱ガスを行なう。なお、前記切換弁Ｖ2は閉で
ある。この場合、炉の昇温速度は５〜１５℃／ｍｉｎ、
排気は１０-6〜１０-7Ｔｏｒｒ程度である。また、前記
脱ガスをさらに確実に行なうために、両ガラス基板Ａ，
Ｂを３００〜４００℃程度の封着剤軟化点付近まで昇温
し、その後、一定時間均熱保持してもよい。Next, when both glass substrates A and B are attached to the mounting mechanism 1 as described above, the chip pipe 21 is connected to each branch pipe 12a of the pipe 12, and the motor 7 is driven to drive both glass substrates. A predetermined gap x (0.1 to 0.1) between the substrates A and B
0.2 mm) is formed. afterwards,
Close the charging door, and use a heater (not shown) to
While heating to ˜400 ° C., the switching valve V 1 is opened and the inside of the furnace is evacuated by the vacuum exhaust device, and at the same time, both glass substrates A and B are degassed. The switching valve V 2 is closed. In this case, the heating rate of the furnace is 5 to 15 ° C./min,
The exhaust gas is about 10 −6 to 10 −7 Torr. In order to perform the degassing more reliably, both glass substrates A,
B may be heated to about 300 to 400 ° C. near the softening point of the sealing agent, and then kept soak for a certain period of time.
【００１１】前記のようにして、炉内を所定真空度とし
炉内排気と両ガラス基板Ａ，Ｂからの脱ガスが完了する
と、炉内をさらに加熱して封着剤２０の溶融温度である
４００〜５００℃に上昇させ、モータ７を駆動して駆動
ロッド５を下降させて表面ガラス基板Ａを背面ガラス基
板Ｂ上に圧着させ、この圧着工程において両ガラス基板
Ａ，Ｂを封着してパネルとする。前述のようにして、封
着工程が完了すると、炉内にＮ2ガス等の不活性ガスを
供給し、１〜１０℃／ｍｉｎの冷却速度でガラス基板
Ａ，Ｂの冷却を行なう。When the inside of the furnace is evacuated to a predetermined degree of vacuum and the degassing from both glass substrates A and B is completed as described above, the inside of the furnace is further heated to the melting temperature of the sealing agent 20. The temperature is raised to 400 to 500 ° C., the motor 7 is driven to lower the drive rod 5, and the front glass substrate A is pressure-bonded onto the rear glass substrate B. In this pressure bonding step, both glass substrates A and B are sealed. The panel. When the sealing step is completed as described above, an inert gas such as N 2 gas is supplied into the furnace to cool the glass substrates A and B at a cooling rate of 1 to 10 ° C./min.
【００１２】前記冷却工程完了後、切換弁Ｖ1を閉とす
るとともに切換弁Ｖ2を開として配管１２、チップ管２
１から各パネル内に放電ガスを規定圧力（４００〜７６
０Ｔｏｒｒ）封入する。この場合、パネル内は真空とな
っているため、放電ガスの封入も極めて短時間で行なわ
れる（図４）。前記パネル内への放電ガスの封入が完了
すると、密閉炉Ｔの装入扉を開き、チップ管２１をバー
ナ等で溶融しつつ管径を絞り、封じ止って所定のプラズ
マディスプレイパネルとし、各パネルを炉外に取り出す
ものである。After the completion of the cooling step, the switching valve V 1 is closed and the switching valve V 2 is opened to open the pipe 12 and the tip pipe 2.
1 to the discharge gas in each panel at a specified pressure (400 to 76
0 Torr) Enclose. In this case, since the inside of the panel is in a vacuum, the discharge gas is enclosed in an extremely short time (FIG. 4). When the charging of the discharge gas into the panel is completed, the charging door of the closed furnace T is opened, the chip tube 21 is melted by a burner or the like to reduce the tube diameter, and sealed to form a predetermined plasma display panel. Is taken out of the furnace.
【００１３】なお、図１に示すように、前記配管１２に
切換弁Ｖ3を介して真空排気装置（図示せず）に接続し
ておき、放電ガスの封入に先立ち、前記封着工程後の冷
却期間中あるいは冷却完了後、パネル内をさらに真空排
気し、その後、切換弁Ｖ2，Ｖ3を切換えて放電ガスを供
給してもよい。このようにすると、パネル内の封入放電
ガスをより純度の高いものとすることができる。As shown in FIG. 1, the pipe 12 is connected to an evacuation device (not shown) via a switching valve V 3 , and before the discharge gas is filled, after the sealing step. During the cooling period or after the cooling is completed, the inside of the panel may be further evacuated to vacuum, and then the switching valves V 2 and V 3 may be switched to supply the discharge gas. By doing so, the enclosed discharge gas in the panel can be made more highly pure.
【００１４】つぎに、実施の第２形態について説明す
る。前記実施の第１形態においては、ガラス基板Ａ，Ｂ
の脱ガス処理と排気処理とを同時に行なう場合を示した
が、前記脱ガス処理と排気処理とを別工程で行なうよう
にしてもよい。この場合、図１に示すように、配管１１
に切換弁Ｖ4を介してＮ2ガス等の不活性ガスボンベ１４
を接続しておき、前述同様、各ガラス基板Ａ，Ｂを密閉
炉Ｔ内に装入し、炉内を真空排気装置により真空排気し
ながらガラス基板Ａ，Ｂを加熱して脱ガスを行なう。そ
の後、切換弁Ｖ1を閉、切換弁Ｖ4を開として炉内にＮ2
ガス等を大気圧近傍まで供給して、前述と同様、ガラス
基板Ａ，Ｂを封着してパネルとする。そして、冷却期間
中あるいは冷却完了後、切換弁Ｖ3を開として真空排気
装置によりパネル内を真空排気し、その後、切換弁
Ｖ2，Ｖ3を切換えて放電ガスをパネル内に封入するもの
である。Next, a second embodiment will be described. In the first embodiment, the glass substrates A and B
Although the case where the degassing process and the exhausting process are performed at the same time is shown, the degassing process and the exhausting process may be performed in separate steps. In this case, as shown in FIG.
To the inert gas cylinder 14 such as N 2 gas via the switching valve V 4.
In the same manner as described above, the glass substrates A and B are charged into the closed furnace T, and the glass substrates A and B are heated while the inside of the furnace is evacuated by a vacuum evacuation device to degas. After that, the switching valve V 1 is closed, the switching valve V 4 is opened, and N 2 is fed into the furnace.
A gas or the like is supplied to the vicinity of the atmospheric pressure, and the glass substrates A and B are sealed to form a panel as described above. During the cooling period or after the cooling is completed, the switching valve V 3 is opened to evacuate the inside of the panel by the vacuum exhaust device, and then the switching valves V 2 and V 3 are switched to fill the discharge gas into the panel. is there.
【００１５】なお、前記各実施の形態においては、チッ
プ管２１を予め背面ガラス基板Ｂに取り付けて炉内に装
入する場合について説明したが、チップ管２１は表面ガ
ラス基板Ａに設けてもよく、また、チップ管２１とガラ
ス基板Ａ，Ｂとの取り付けは、チップ管２１とガラス基
板Ａ，Ｂとの取り付け部に封着剤２０を組込んでおき、
ガラス基板Ａ，Ｂの封着工程の加熱時に同時に封着して
もよい。さらに、ガラス基板Ａ，Ｂ、封着剤２０等を予
め封着温度より低い温度で加熱して乾燥、仮焼成しても
よい。この場合、アウトガスが減少して炉内の汚染を軽
減し、炉内雰囲気の純度を向上させることができるとと
もに封着の安定性が向上する。In each of the above-described embodiments, the case where the tip tube 21 is attached to the rear glass substrate B in advance and charged into the furnace has been described, but the tip tube 21 may be provided on the front glass substrate A. Further, the attachment of the chip tube 21 and the glass substrates A and B to the chip tube 21 and the glass substrates A and B is carried out by incorporating the sealing agent 20 into the attachment portion.
The glass substrates A and B may be simultaneously sealed at the time of heating in the sealing process. Further, the glass substrates A and B, the sealing agent 20 and the like may be heated in advance at a temperature lower than the sealing temperature, dried, and calcined. In this case, outgas is reduced to reduce contamination in the furnace, the purity of the atmosphere in the furnace can be improved, and the stability of sealing is improved.
【００１６】つぎに、実施の第３形態について説明す
る。前記実施の第１形態と同様に、炉内を所定真空度と
し炉内排気と両ガラス基板Ａ，Ｂからの脱ガスが完了す
ると、炉内をさらに加熱して封着剤２０の溶融温度であ
る４００〜５００℃に上昇させ、その間あるいはその後
の均熱中に、切換弁Ｖ1を閉、切換弁Ｖ4を開として放電
ガスボンベ１５からたとえばネオンガス等の放電ガスを
炉内に導入する。そして、放電ガスの炉内導入と両ガラ
ス基板Ａ，Ｂの加熱が完了すると、前述と同様表面ガラ
ス基板Ａを背面ガラス基板Ｂ上に圧着させ、この圧着工
程において両ガラス基板Ａ，Ｂを加圧してパネル化する
と同時に放電ガスを封入する。この場合においては、チ
ップ管２１および配管１２等は不要である。Next, a third embodiment will be described. Similar to the first embodiment, when the inside of the furnace is set to a predetermined degree of vacuum and the exhaust of the inside of the furnace and the degassing from both glass substrates A and B are completed, the inside of the furnace is further heated to the melting temperature of the sealing agent 20. The temperature is raised to a certain temperature of 400 to 500 ° C., and during or after soaking, the switching valve V 1 is closed and the switching valve V 4 is opened to introduce a discharge gas such as neon gas into the furnace from the discharge gas cylinder 15. Then, when the introduction of the discharge gas into the furnace and the heating of both glass substrates A and B are completed, the front surface glass substrate A is pressure-bonded onto the rear glass substrate B in the same manner as described above, and both glass substrates A and B are applied in this pressure bonding step. At the same time, it is pressed into a panel and the discharge gas is enclosed. In this case, the tip pipe 21, the pipe 12 and the like are unnecessary.
【００１７】なお、放電ガスは温度が高いため、最終仕
上圧力（常温時圧力）より高圧、たとえば４５０℃の温
度においては常温時圧力の約２．４倍の圧力とするのが
好ましい（図５）。前記のようにしてパネル内に放電ガ
スを封入すれば、１〜１０℃／ｍｉｎの冷却速度で冷却
する。Since the discharge gas has a high temperature, it is preferable to set the pressure higher than the final finishing pressure (pressure at room temperature), for example, at a temperature of 450 ° C., about 2.4 times the pressure at room temperature (FIG. 5). ). If the discharge gas is enclosed in the panel as described above, the panel is cooled at a cooling rate of 1 to 10 ° C./min.
【００１８】また、前記実施の第３形態において、図３
に示すように両ガラス基板Ａ，Ｂを封着剤２０より高温
で融解する支持材片２２、たとえば混合物組成を若干変
化させた低融点ガラス等で支持し、封着工程（４００〜
５００℃）で支持材片２２を融解させて両ガラス基板
Ａ，Ｂを封着してパネルとした後、炉内圧力をパネル内
の圧力より高い圧力として両ガラス基板Ａ，Ｂを押圧す
ると同時に放電ガスをパネル内に封入してもよい。この
場合、載置機構１における各背面ガラス基板用セッタ３
は単にスライドガイド２に摺動自在に取り付ける必要が
ある。さらに、前記実施の各形態ではバッチ処理で説明
したが、マッフル内にガラス基板を位置させ、このマッ
フルを炉内で連続的あるいは間欠的に搬送して処理する
ようにしてもよい。In addition, in the third embodiment, as shown in FIG.
As shown in FIG. 2, both glass substrates A and B are supported by a support material piece 22 that melts at a higher temperature than the sealing agent 20, for example, a low melting point glass having a slightly changed composition, and the sealing step (400 to
After the support material piece 22 is melted at 500 ° C. and both glass substrates A and B are sealed to form a panel, the furnace pressure is set higher than the pressure in the panel to press both glass substrates A and B at the same time. The discharge gas may be enclosed in the panel. In this case, each back glass substrate setter 3 in the mounting mechanism 1
Need only be slidably attached to the slide guide 2. Further, in each of the above-described embodiments, the batch processing has been described, but the glass substrate may be positioned in the muffle and the muffle may be continuously or intermittently transported in the furnace for processing.
【００１９】[0019]
【発明の効果】以上の説明で明らかなように、請求項
１，２の発明によれば、表面ガラス基板と背面ガラス基
板とは、封着に先立って所定隙間をもって所定温度下で
全体を加熱することにより脱ガスを図るため、脱ガス時
間が短く、かつ、確実に行なうことができ、生産性をそ
れだけ向上させることができる。また、請求項３の発明
によれば、ガラス基板間の排気・放電ガスの封入は、炉
内圧力制御と炉内雰囲気の変更により行ない、かつ、ガ
ラス基板間の排気・放電ガスの封入も狭い間隙を通して
行なうものでないため、排気時間、放電ガス封入時間は
短く生産効率を極めて高くすることができるばかりかチ
ップ管を不要とすることができ、安価であるという効果
を奏する。さらに、請求項４の発明のように、両ガラス
基板の封着を炉内圧とガラス基板間圧力との圧力差によ
り行なうと、圧着力が均一となり、ガラス基板間の隙間
を容易に規定値内とすることができる。また、いずれの
発明においても、処理炉は１炉で済むため、それだけ設
備費も安価である。As is apparent from the above description, according to the first and second aspects of the invention, the front glass substrate and the rear glass substrate are entirely heated at a predetermined temperature with a predetermined gap prior to sealing. By doing so, degassing is achieved, so degassing time can be shortened and reliable, and productivity can be improved accordingly. According to the invention of claim 3, the exhaust / discharge gas is sealed between the glass substrates by controlling the pressure in the furnace and changing the atmosphere in the furnace, and the exhaust / discharge gas is sealed between the glass substrates narrowly. Since it is not carried out through a gap, the exhaust time and the discharge gas charging time are short, and not only the production efficiency can be made extremely high, but also the tip tube is not required, and there is an effect that it is inexpensive. Further, when the both glass substrates are sealed by the pressure difference between the furnace pressure and the pressure between the glass substrates as in the invention of claim 4, the pressure bonding force becomes uniform and the gap between the glass substrates is easily within the specified value. Can be Further, in any of the inventions, since only one processing furnace is required, the equipment cost is correspondingly low.
【図１】 本発明に使用する密閉炉の断面図。FIG. 1 is a sectional view of a closed furnace used in the present invention.
【図２】 図１の載置機構の説明図。2 is an explanatory view of the mounting mechanism of FIG. 1. FIG.
【図３】 ガラス基板の他の封着前の状態を示す図。FIG. 3 is a view showing another state before sealing the glass substrate.
【図４】 本発明の各工程、炉内温度、炉内圧力、パネ
ル内圧力との関係を示すグラフ。FIG. 4 is a graph showing the relationship among each step, furnace temperature, furnace pressure, and panel pressure of the present invention.
【図５】 本発明の各工程、炉内温度、炉内圧力との関
係を示すグラフ。FIG. 5 is a graph showing the relationship between each step of the present invention, furnace temperature, and furnace pressure.
１…載置機構、１０…炉本体、１３，１５…放電ガスボ
ンベ、２０…封着剤、２１…チップ管、２２…支持材
片、Ａ…表面ガラス基板、Ｂ…背面ガラス基板、Ｔ…密
閉炉。DESCRIPTION OF SYMBOLS 1 ... Mounting mechanism, 10 ... Furnace main body, 13, 15 ... Discharge gas cylinder, 20 ... Sealing agent, 21 ... Chip tube, 22 ... Support material piece, A ... Surface glass substrate, B ... Rear glass substrate, T ... Sealing Furnace.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成８年１２月２日[Submission date] December 2, 1996
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項２[Correction target item name] Claim 2
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００５[Correction target item name] 0005
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００５】[0005]
【課題を解決するための手段】本発明にかかるプラズマ
ディスプレイパネルの製造方法は、前記目的を達成する
ために、請求項１の発明では、表面ガラス基板と背面ガ
ラス基板とを所定間隔をもってその電極が対向かつ直交
するように重ね合わせる工程と、この重ね合わせたガラ
ス基板を炉内に位置させて当該炉内を所定温度下で真空
排気する工程と、当該炉内を封着温度まで昇温して両ガ
ラス基板を封着する工程と、ガラス基板封着後に炉内を
冷却して両ガラス基板を冷却する工程と、冷却完了後に
前記いずれかのガラス基板に取り付けたチップ管から放
電ガスを供給して封入する工程とからなるものである。
請求項２の発明では、表面ガラス基板と背面ガラス基板
とを所定間隔をもってその電極が対向かつ直交するよう
に重ね合わせる工程と、この重ね合わせたガラス基板を
炉内に位置させて当該炉内を所定温度下での真空排気に
引続き、不活性雰囲気中で加熱する工程と、当該炉内を
封着温度まで昇温して両ガラス基板を封着する工程と、
ガラス基板封着後に炉内を冷却して両ガラス基板を冷却
する工程と、ガラス基板間の空間を前記いずれかのガラ
ス基板に取り付けたチップ管から真空排気する工程と、
前記空間内に前記チップ管から放電ガスを供給して封入
する工程とからなるものである。請求項３の発明では、
表面ガラス基板と背面ガラス基板とを所定間隔をもって
その電極が対向かつ直交するように重ね合わせる工程
と、この重ね合わせたガラス基板を密閉炉内に位置させ
て炉内空間を真空排気して前記ガラス基板間の空気を排
気する工程と、放電ガスを前記炉内空間に供給すること
で前記ガラス基板間に放電ガスを介在させる工程と、前
記炉内を所定温度まで昇温することにより前記ガラス基
板の外周に設けた封着剤により両ガラス基板を封着する
工程とからなるものである。請求項４の発明では、前記
請求項３において、炉内圧をガラス基板間に封入した放
電ガスの圧力より高くすることにより封着時のガラス基
板への加圧を行なうものである。In order to achieve the above object, the method of manufacturing a plasma display panel according to the present invention is characterized in that, in the invention of claim 1, the surface glass substrate and the rear glass substrate are provided with electrodes at a predetermined interval. Are placed so that they face each other and are orthogonal to each other, a step of placing the stacked glass substrates in the furnace and evacuating the furnace at a predetermined temperature, and raising the temperature of the furnace to the sealing temperature. And sealing both glass substrates together, cooling the inside of the furnace by cooling the glass substrates after sealing the glass substrates, and supplying the discharge gas from the chip tube attached to one of the glass substrates after cooling is completed. And then encapsulating.
In the invention of claim 2, a step of stacking a front glass substrate and a back glass substrate so that their electrodes are opposed and orthogonal to each other at a predetermined interval, and positioning the stacked glass substrates in a furnace, Following vacuum evacuation at a predetermined temperature, a step of heating in an inert atmosphere, a step of raising the temperature in the furnace to a sealing temperature and sealing both glass substrates,
A step of cooling the inside of the furnace to cool both glass substrates after sealing the glass substrates, and a step of evacuating the space between the glass substrates from the chip tube attached to one of the glass substrates,
And a process of supplying a discharge gas from the tip tube to fill the space. In the invention of claim 3,
The step of stacking the front glass substrate and the back glass substrate so that their electrodes are opposed and orthogonal to each other at a predetermined interval, and the stacked glass substrates are positioned in a closed furnace to evacuate the furnace space to evacuate the glass. A step of exhausting air between the substrates; a step of interposing the discharge gas between the glass substrates by supplying a discharge gas into the furnace space; and a step of raising the temperature in the furnace to a predetermined temperature. And a step of sealing both glass substrates with a sealing agent provided on the outer periphery of the. According to a fourth aspect of the present invention, in the third aspect, the pressure in the glass substrate at the time of sealing is performed by making the furnace internal pressure higher than the pressure of the discharge gas sealed between the glass substrates.
Claims (4)
定間隔をもってその電極が対向かつ直交するように重ね
合わせる工程と、この重ね合わせたガラス基板を炉内に
位置させて当該炉内を所定温度下で真空排気する工程
と、当該炉内を封着温度まで昇温して両ガラス基板を封
着する工程と、ガラス基板封着後に炉内を冷却して両ガ
ラス基板を冷却する工程と、冷却完了後に前記いずれか
のガラス基板に取り付けたチップ管から放電ガスを供給
して封入する工程とからなることを特徴とするプラズマ
ディスプレイパネルの製造方法。1. A step of stacking a front glass substrate and a rear glass substrate so that their electrodes are opposed and orthogonal to each other at a predetermined interval, and placing the stacked glass substrates in a furnace to set a predetermined temperature in the furnace. A step of evacuating below, a step of heating the inside of the furnace to a sealing temperature to seal both glass substrates, a step of cooling the inside of the furnace after sealing the glass substrates to cool both glass substrates, A method for manufacturing a plasma display panel, which comprises a step of supplying a discharge gas from a chip tube attached to any one of the glass substrates and sealing the discharge gas after completion of cooling.
定間隔をもってその電極が対向かつ直交するように重ね
合わせる工程と、この重ね合わせたガラス基板を炉内に
位置させて当該炉内を所定温度下での真空排気に引続
き、不活性雰囲気中で加熱する工程と、当該炉内を封着
温度まで昇温して両ガラス基板を封着する工程と、ガラ
ス基板封着後に炉内を冷却して両ガラス基板を冷却する
工程と、ガラス基板間の空間を前記いずれからのガラス
基板に取り付けたチップ管から真空排気する工程と、前
記空間内に前記チップ管から放電ガスを供給して封入す
る工程とからなることを特徴とするプラズマディスプレ
イパネルの製造方法。2. A step of stacking a front glass substrate and a back glass substrate so that their electrodes face each other and are orthogonal to each other at a predetermined interval, and placing the stacked glass substrates in a furnace to set a predetermined temperature in the furnace. Following vacuum evacuation below, heating in an inert atmosphere, heating the furnace to the sealing temperature to seal both glass substrates, and cooling the furnace after sealing the glass substrates. Cooling both glass substrates, evacuating the space between the glass substrates from the chip tube attached to the glass substrate from any of the above, and supplying discharge gas from the chip tube into the space and sealing it. A method of manufacturing a plasma display panel, comprising the steps of:
定間隔をもってその電極が対向かつ直交するように重ね
合わせる工程と、この重ね合わせたガラス基板を密閉炉
内に位置させて炉内空間を真空排気して前記ガラス基板
間の空気を排気する工程と、放電ガスを前記炉内空間に
供給することで前記ガラス基板間に放電ガスを介在させ
る工程と、前記炉内を所定温度まで昇温することにより
前記ガラス基板の外周に設けた封着剤により両ガラス基
板を封着する工程とからなることを特徴とするプラズマ
ディスプレイパネルの製造方法。3. A step of stacking a front glass substrate and a back glass substrate so that their electrodes face each other and are orthogonal to each other at a predetermined interval, and placing the stacked glass substrates in a closed furnace to vacuum the space in the furnace. Evacuating to exhaust the air between the glass substrates, supplying discharge gas into the furnace space to interpose the discharge gas between the glass substrates, and raising the temperature in the furnace to a predetermined temperature. Thus, the method for producing a plasma display panel, comprising the step of sealing both glass substrates with a sealing agent provided on the outer periphery of the glass substrate.
スの圧力より高くすることにより封着時のガラス基板へ
の加圧を行なうことを特徴とする前記請求項３に記載の
プラズマディスプレイパネルの製造方法。4. The plasma display panel according to claim 3, wherein the pressure in the glass substrate at the time of sealing is performed by making the internal pressure of the furnace higher than the pressure of the discharge gas sealed between the glass substrates. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05455796A JP3554432B2 (en) | 1996-01-11 | 1996-03-12 | Method for manufacturing plasma display panel |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP314996 | 1996-01-11 | ||
| JP8-3149 | 1996-01-11 | ||
| JP05455796A JP3554432B2 (en) | 1996-01-11 | 1996-03-12 | Method for manufacturing plasma display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09251839A true JPH09251839A (en) | 1997-09-22 |
| JP3554432B2 JP3554432B2 (en) | 2004-08-18 |
Family
ID=26336663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05455796A Expired - Fee Related JP3554432B2 (en) | 1996-01-11 | 1996-03-12 | Method for manufacturing plasma display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3554432B2 (en) |
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| KR19990043617A (en) * | 1997-11-29 | 1999-06-15 | 김영남 | Manufacturing Method of Plasma Display Device |
| WO2000072351A1 (en) * | 1999-05-20 | 2000-11-30 | Matsushita Electric Industrial Co., Ltd. | Method of producing gas discharge panel |
| KR100309275B1 (en) * | 1998-09-15 | 2001-12-17 | 구자홍 | PDP manufacturing method and PDP gas injection and exhaust machine |
| US6332821B1 (en) * | 1998-12-15 | 2001-12-25 | Samsung Sdi Co., Ltd. | Method for fabricating plasma display device |
| JP2002140987A (en) * | 2000-08-24 | 2002-05-17 | Matsushita Electric Ind Co Ltd | Plasma display panel and its manufacturing method |
| JP2002245941A (en) * | 2001-02-13 | 2002-08-30 | Nec Corp | Manufacturing method of plasma display panel |
| JP2002358884A (en) * | 2001-05-30 | 2002-12-13 | Matsushita Electric Ind Co Ltd | Manufacturing method of vacuum vessel and manufacturing method of image display device |
| JP2003068201A (en) * | 1998-09-14 | 2003-03-07 | Matsushita Electric Ind Co Ltd | Manufacturing method and sealing device for gas discharge panel |
| US6809476B2 (en) | 2000-11-29 | 2004-10-26 | Lg Electronics Inc. | Plasma display panel and method for fabricating the same |
| US6827623B2 (en) | 1998-06-29 | 2004-12-07 | Fujitsu Limited | Manufacturing method of plasma display panels |
| US6848964B1 (en) | 1998-09-14 | 2005-02-01 | Matsushita Electric Industrial Co., Ltd. | Sealing method and apparatus for manufacturing high-performance gas discharge panel |
| JP2005216830A (en) * | 2004-02-02 | 2005-08-11 | Pioneer Electronic Corp | Sealing and evacuating device of plasma display panel, and method of manufacturing plasma display panel and plasma display device |
| US6984159B1 (en) | 1998-06-15 | 2006-01-10 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel with superior light-emitting characteristics, and method and apparatus for producing the plasma display panel |
| KR100707055B1 (en) * | 1998-09-14 | 2007-04-13 | 마츠시타 덴끼 산교 가부시키가이샤 | Gas discharge panel production method and exhaust pipe sealing off apparatus |
| WO2009011468A1 (en) * | 2007-07-13 | 2009-01-22 | World Tech Co., Ltd. | Manufacturing method for plain shape neon sign device without gas injection pipe |
| US7629746B2 (en) | 2002-11-26 | 2009-12-08 | Samsung Sdi Co., Ltd. | Plasma display panel having sealing structure for reducing noise |
| JP2012104228A (en) * | 2010-11-05 | 2012-05-31 | Panasonic Corp | Method for manufacturing image display device |
| CN107993910A (en) * | 2017-12-28 | 2018-05-04 | 宜昌华耀科技有限公司 | A kind of ultraviolet tube sealed in unit and packaging technology |
-
1996
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