JP2022095302A5 - - Google Patents

Description

The present invention relates to a dicing tape that can be used in the manufacturing process of semiconductor devices.

Conventionally, in the manufacture of semiconductor devices, a dicing tape or a dicing die-bonding film in which the dicing tape and a die-bonding film are integrated is sometimes used in order to singulate a semiconductor wafer into semiconductor chips by a dicing process. be. The dicing tape has a form in which an adhesive layer is provided on a base film. A semiconductor wafer is placed on the adhesive layer, and the individualized semiconductor chips are fixed so that they do not scatter when the semiconductor wafer is diced. Used for holding. After that, the semiconductor chip is peeled off from the adhesive layer of the dicing tape and adhered to an adherend such as a lead frame, a wiring board, or another semiconductor chip via an adhesive or adhesive film separately prepared.

A dicing die-bonding film is a die-bonding film (hereinafter sometimes referred to as an "adhesive film" or "adhesive layer") provided releasably on an adhesive layer of a dicing tape. In the manufacture of semiconductor devices, a semiconductor wafer is attached and placed on the die bond film of the dicing die bond film, and the semiconductor wafer is diced together with the die bond film to obtain individual semiconductor chips with the adhesive film. After that, the semiconductor chip is peeled (picked up) from the adhesive layer of the dicing tape together with the die-bonding film as a semiconductor chip with the die-bonding film, and the semiconductor chip is adhered to a lead frame, a wiring board, or another semiconductor chip through the die-bonding film. Stick to the body.

The dicing die-bonding film is preferably used from the viewpoint of improving productivity, but in recent years, as a method of obtaining a semiconductor chip with a die-bonding film using a dicing die-bonding film, a conventional full-cut cutting method using a dicing blade rotating at high speed has been used. (1) a method by DBG (Dicing Before Grinding), (2) a method by Stealth Dicing (registered trademark), etc., assuming that chipping can be suppressed when singulating a semiconductor wafer to be thinned into chips. Proposed.

In the DBG method of (1) above, first, without completely cutting the semiconductor wafer using a dicing blade, dividing grooves of a predetermined depth are formed on the surface of the semiconductor wafer, and then the back surface is ground. is appropriately adjusted to obtain a semiconductor wafer divided body containing a plurality of semiconductor chips or a semiconductor wafer that can be singulated into a plurality of semiconductor chips. After that, the semiconductor wafer divided body or the semiconductor wafer that can be singulated into the semiconductor chip is attached to a dicing die bond film, and the dicing tape is expanded at a low temperature (eg, -30 ° C. or higher and 0 ° C. or lower) (hereinafter referred to as (sometimes referred to as “cool expansion”), the low-temperature embrittled die-bonding film is cleaved along the dividing grooves into sizes corresponding to individual semiconductor chips, or cleaved together with the semiconductor wafer. Finally, the die-bonding film-attached semiconductor chips can be obtained by peeling off from the adhesive layer of the dicing tape by picking up.

In the stealth dicing method of (2) above, first, a semiconductor wafer is attached to a dicing die bond film, and a laser beam is irradiated inside the semiconductor wafer to selectively form a modified region (modified layer) while dicing. form a line. After that, the dicing tape is cool-expanded to develop cracks perpendicular to the semiconductor wafer from the modified region, and the semiconductor wafers are individually cut along the dicing lines along with the low-temperature embrittled die bond film. Finally, the adhesive layer of the dicing tape is peeled off by pickup to obtain individual semiconductor chips with a die-bonding film.
In addition, in the above method (1) using DBG, instead of forming dividing (cleavage) grooves on the surface of the semiconductor wafer with a dicing blade, stealth dicing can be used to selectively provide a modified region inside the semiconductor wafer to separate the semiconductor wafer. It is also possible to obtain a fine semiconductor wafer. This is a method called SDBG (Stealth Dicing Before Griding).

In the pick-up process, after cutting the semiconductor wafer with the die-bonding film, the dicing tape is expanded at around room temperature (hereinafter sometimes referred to as "room-temperature expansion") to separate adjacent semiconductor chips with the die-bonding film. The interval (hereinafter sometimes referred to as "kerf width") is widened, and the outer peripheral portion of the dicing tape (the portion where the semiconductor wafer is not attached) is thermally shrunk to widen the interval (kerf width) between individual semiconductor chips. By fixing the dicing tape while it is unfolded, the cut individual semiconductor chips with the die-bonding film can be peeled off from the adhesive layer of the dicing tape and picked up.

In recent years, with the thinning of semiconductor wafers, chip cracks are more likely to occur during wire bonding in the multi-layer stacking process of semiconductor chips. Proposed. The wire-embedded die-bonding film needs to embed the wire without gaps during die-bonding, and is thicker and has higher fluidity (lower melt viscosity at high temperatures) than the conventional general-purpose die-bonding film described above. Therefore, when such a wire-embedded die-bonding film is laminated on a conventional dicing tape to manufacture a semiconductor chip, the following problems arise.

That is, in the above-described cool-expanding process, when a cutting force (external stress) is applied from the dicing tape to be cool-expanded to the die-bonding film or the semiconductor wafer with the die-bonding film in close contact with the dicing tape, tensile stress at low temperature is applied. In conventional dicing tapes that cannot be said to be sufficiently large, it is difficult to say that the tensile stress is a magnitude with a sufficient margin as an external stress that can sufficiently break the wire-embedded semiconductor wafer with a die-bonding film. A portion of the semiconductor wafer with the embedded die-bonding film that is to be cut may not be cut. In addition, the interval (kerf width) between semiconductor chips is not sufficiently widened, causing re-adhesion of thick cut die-bonding films and collision between semiconductor chips, which may induce pick-up errors in the pick-up process. be.

Furthermore, in the semiconductor chip with the die-bonding film on the adhesive layer of the dicing tape that has undergone the expanding process, the edge portion of the die-bonding film may partially peel off from the adhesive layer of the dicing tape. As the number of layers of wiring circuits formed in advance on the surface of the semiconductor chip increases, the difference in coefficient of thermal expansion between the wiring circuit and the material of the semiconductor chip also causes the semiconductor chip to warp more easily. is likely to be encouraged. If the degree of partial peeling (hereinafter sometimes referred to as "floating") is large, it may cause the semiconductor chip with the die-bonding film to unintentionally fall off from the dicing tape in the subsequent washing process or the like. Also, in the subsequent pick-up process, misalignment of the semiconductor chip or the phenomenon described below may cause pick-up errors. Especially when the adhesive layer of the dicing tape is composed of an active energy ray (for example, ultraviolet) curable adhesive composition, the adhesive strength of the adhesive layer is reduced before picking up the semiconductor chip with the die bond film from the dicing tape. However, if the edge portion of the semiconductor chip with the die-bonding film is largely peeled off from the adhesive layer of the dicing tape, the adhesive layer at the peeled portion will be exposed to oxygen in the air. Due to the contact, the adhesive layer may not be sufficiently cured even if it is irradiated with ultraviolet rays. In such a case, since the adhesive strength of the adhesive layer is not sufficiently reduced, in the pick-up process, the semiconductor chip located on the dicing tape is pushed up from the lower surface side of the dicing tape with a pushing-up jig having a large pushing-up portion area. When a suction collet is brought into contact with the top of the semiconductor chip to pick up the die-bonding film, the edge of the semiconductor chip with the die-bonding film re-adheres to the insufficiently cured adhesive layer, and the semiconductor chip with the die-bonding film is attached to the dicing tape. Phenomenon that cannot be picked up from the pressure-sensitive adhesive layer tends to occur.

Therefore, for die-bonding films, research is being vigorously pursued to control the balance between fracturing and fluidity, and to improve reliability. Even if a die-bonding film with a large thickness and high fluidity such as a die-bonding film is used, the die-bonding film can be cleaved well together with the semiconductor wafer by expanding, and the die-bonding film will not partially peel off from the adhesive layer. There is a strong demand for a performance that is difficult to obtain and finally achieves good pick-up properties.

As a conventional technique for suppressing the problem of breaking at the time of expansion and the occurrence of partial peeling after expansion, Patent Document 1 discloses that the die bond film on the dicing tape is cleaved well in the expanding process and from the dicing tape. For the purpose of suppressing lifting and peeling, it has a laminated structure including a base material and an adhesive layer, and in a tensile test under specific conditions, at least a part of the strain value in the range of 5 to 30% 15 to A dicing tape is disclosed that can exhibit a tensile stress in the range of 32 MPa.

On the other hand, in handling the dicing tape, the dicing tape may adhere to the die-bonding film under heating conditions, and the dicing die-bonding film may adhere to the semiconductor wafer under heating conditions. When pre-cutting as a dicing die bond film, the dicing tape is required to have a certain degree of heat resistance, because it may be locally heat treated to remove the excess dicing tape without cutting it. It is If the dicing tape has low heat resistance, it may adhere to the work table (die) and be difficult to remove. Moreover, if the dicing tape is deformed by heat such as distortion or warping, the thinned semiconductor wafer may be deformed. For this reason, the dicing tape is required to have good cutting properties for the semiconductor wafer with the die-bonding film, good adhesion to the die-bonding film up to the pick-up process, good pick-up properties, and heat resistance.

As a conventional technique for improving the above heat resistance, Patent Document 2 discloses that ethylene - 30 parts by mass or more and 95 parts by mass or less of at least one resin (A) selected from the group consisting of unsaturated carboxylic acid-based copolymers and ionomers of the ethylene/unsaturated carboxylic acid-based copolymers, polyamide and polyurethane At least one resin (B) selected from the group consisting of 5 parts by mass or more and less than 40 parts by mass, and an antistatic agent other than the polyamide (C) 0 parts by mass or more and 30 parts by mass or less (however, Disclosed is a dicing film substrate comprising at least one layer comprising a resin composition (the total of resin (A), resin (B) and antistatic agent (C) being 100 parts by mass).

JP 2019-16787 A JP 2017-98369 A

Regarding the dicing tape of Patent Document 1, a semiconductor wafer segment is attached to a dicing die-bonding film obtained by laminating a dicing tape capable of exhibiting specific tensile stress characteristics and a die-bonding film mainly composed of an acrylic resin and having a thickness of 10 μm. , It has been shown that the die-bonding film can be divided (broken) well by cool expansion. %, and there is room for improvement. In addition, there is no reference to the splitting property of a wire-embedded die-bonding film having a large thickness and high fluidity, the pick-up property of a semiconductor chip, or the heat resistance of a dicing tape, and these points are unknown. At least the polyvinyl chloride base material as the dicing tape shown in the examples cannot be said to have sufficient heat resistance.

Further, regarding the dicing film base material of Patent Document 2, the dicing film base material containing at least one layer made of a specific resin composition in Examples has excellent heat resistance and is capable of dividing (cleavage) a semiconductor wafer. and expandability, and by using it as a dicing film, it is possible to smoothly perform the dicing process and the subsequent expansion process during semiconductor manufacturing, and to manufacture semiconductors without tape residue or deformation. However, we are completely aware of issues such as die-bonding films including wire-embedded types, their breakability due to cool expansion, and the occurrence of partial peeling (floating) of die-bonding films from the adhesive layer of the dicing tape. These points, including pick-up properties of semiconductor chips, are unknown.

As described above, the dicing tape of the prior art has a high fluidity such as a wire-embedded die-bonding film, and when used as a dicing die-bonding film in the manufacturing process of semiconductor chips by being laminated with a die-bonding film having a large thickness, it does not cool. Sufficient from many viewpoints such as splitting of the semiconductor wafer with the die-bonding film during expansion, suppression of partial peeling (floating) of the die-bonding film from the adhesive layer after expansion, pick-up performance and heat resistance of the semiconductor chip. It's hard to say that I'm satisfied, and there is still room for improvement.

The present invention has been made in view of the above problems and circumstances, and as a dicing tape for a semiconductor manufacturing process, a die bond film having high fluidity and a large thickness such as a wire-embedded die bond film is laminated. Even in the case of application, (1) excellent heat resistance, (2) the semiconductor wafer with the die-bonding film can be cut well by cool expansion, and the kerf width can be sufficiently secured by room temperature expansion, (3) To provide a dicing tape capable of satisfactorily picking up individual split die-bonding film-attached semiconductor chips by sufficiently suppressing partial peeling (lifting) of the dicing tape from an adhesive layer in the die-bonding film after splitting. intended to

The inventors of the present invention have made intensive studies to solve the above problems based on the above object, and found that (1) a resin ( A) and a resin film containing a polyamide resin (B) in a specific mass ratio, using a resin film having a predetermined tensile stress physical property value, (2) a pressure-sensitive adhesive composition having a hydroxyl value within a specific range As a main component, an acrylic adhesive polymer having The present inventors have found that the problem can be solved and completed the present invention.

That is, the dicing tape of the present invention is
A base film and a pressure-sensitive adhesive layer containing an active energy ray-curable pressure-sensitive adhesive composition on the base film,
(1) The base film contains a resin (A) made of an ethylene/unsaturated carboxylic acid copolymer ionomer and a polyamide resin (B),
Consists of a resin composition in which the mass ratio (A):(B) of the resin (A) and the resin (B) in the entire substrate film is in the range of 72:28 to 95:5,
The stress at 5% elongation at -15 ° C. stretched the base film in either the MD direction (flow direction during film formation of the base film) or the TD direction (perpendicular to the MD direction). Even in the case, the range is 15.5 MPa or more and 28.5 MPa or less,
(2) The active energy ray-curable adhesive composition comprises an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a poly that undergoes a cross-linking reaction with the hydroxyl group. containing an isocyanate cross-linking agent,
The acrylic adhesive polymer has a main chain glass transition temperature (Tg) of −65° C. or more and −50° C. or less, and a hydroxyl value of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less. ,
In the active energy ray-curable adhesive composition,
The equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate cross-linking agent and the hydroxyl group (OH) of the acrylic adhesive polymer is in the range of 0.02 or more and 0.20 or less,
The residual hydroxyl group concentration after the crosslinking reaction is in the range of 0.18 mmol or more and 0.90 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition,
The active energy ray-reactive carbon-carbon double bond concentration is in the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

In one embodiment, the active energy ray-reactive carbon-carbon double bond concentration ranges from 1.02 mmol to 1.51 mmol per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

In one certain form, the said acrylic adhesive polymer has the weight average molecular weight Mw of the range of 200,000-600,000.

In one certain form, the said acrylic adhesive polymer has an acid value of the range of 0 mgKOH/g or more and 9.0 mgKOH/g or less .

According to the present invention, as a dicing tape for a semiconductor manufacturing process, even when a die-bonding film having high fluidity and a large thickness such as a wire-embedded die-bonding film is laminated and applied, (1) heat resistance (2) A semiconductor wafer with a die-bonding film can be cut well by cool expansion, and a sufficient kerf width can be secured by room-temperature expansion; It is possible to provide a dicing tape in which partial peeling (floating) from the agent layer is sufficiently suppressed, and (4) individual split semiconductor chips with a die-bonding film can be picked up favorably.

1 is a cross-sectional view showing an example of the configuration of a base film of a dicing tape to which the embodiment is applied; FIG. 1 is a cross-sectional view showing an example of the configuration of a dicing tape to which the embodiment is applied; FIG. 1 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which a dicing tape to which the present embodiment is applied is attached to a die-bonding film; FIG. 4 is a flow chart explaining a method for manufacturing a dicing tape. 4 is a flow chart describing a method for manufacturing a semiconductor chip; FIG. 4 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of the dicing die bond film, and a semiconductor wafer processed to be singulated is attached to the center of the die bond film. (a) to (f) are cross-sectional views showing an example of a step of grinding a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation and a step of bonding the semiconductor wafer to a dicing die-bonding film. (a) to (f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a thin film semiconductor wafer having a plurality of modified regions bonded with a dicing die-bonding film. 1 is a schematic cross-sectional view of one mode of a semiconductor device having a stacked structure using a semiconductor chip manufactured using a dicing die-bonding film in which a dicing tape to which the present embodiment is applied is attached to a die-bonding film. FIG. FIG. 11 is a schematic cross-sectional view of another mode of a semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film in which a dicing tape to which the present embodiment is applied is attached to a die-bonding film . (a) to (c) are schematic diagrams for explaining a method for measuring the post-UV irradiation adhesion of the adhesive layer of the dicing tape to the die bond film (adhesive layer). FIG. 2 is a schematic diagram for explaining a method for measuring the shear adhesive strength at −30° C. of the pressure-sensitive adhesive layer of the dicing tape to the die-bonding film (adhesive layer). FIG. 10 is a plan view for explaining a method of measuring a gap (kerf width) between semiconductor chips after expansion; 14 is an enlarged plan view of the central portion of the semiconductor wafer in FIG. 13; FIG.

Preferred embodiments of the present invention will now be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments.

(Structure of dicing tape and dicing die-bonding film)
1(a) to 1(d) are cross-sectional views showing an example of the configuration of a base film 1 of a dicing tape to which the present embodiment is applied. The base film 1 of the dicing tape of the present embodiment may be a single layer of a single resin composition (see (a) 1-A in FIG. 1), or may be composed of multiple layers of the same resin composition. It may be a laminate (see (b) 1-B in FIG. 1), or a laminate consisting of multiple layers of different resin compositions (see (c) 1-C and (d) 1-D in FIG. 1) ). In the case of a laminate comprising a plurality of layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

FIG. 2 is a cross-sectional view showing an example of the configuration of the dicing tape to which this embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a configuration in which the adhesive layer 2 is provided on the first surface of the base film 1 . Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having releasability. It's okay to be there. The base film 1 is composed of a resin composition containing a resin (A) composed of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (B). As the adhesive for forming the adhesive layer 2, for example, an active energy ray-curable acrylic adhesive that cures and shrinks when irradiated with an active energy ray such as ultraviolet (UV) to reduce the adhesive force to the adherend. An adhesive or the like is used.

The dicing tape 10 having such a configuration is used, for example, in the following manner in the semiconductor manufacturing process. On the adhesive layer 2 of the dicing tape 10, a semiconductor wafer having dividing grooves formed on the surface by a blade or a semiconductor wafer having a modified layer formed inside by a laser is attached and held (temporarily fixed), and then cooled. After the semiconductor wafer is cleaved into individual semiconductor chips by expansion, the kerf width between the semiconductor chips is sufficiently expanded by room temperature expansion, and the individual semiconductor chips are separated from the adhesive layer 2 of the dicing tape 10 by a pick-up process. The obtained semiconductor chip is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via an adhesive agent or adhesive film prepared separately.

FIG. 3 is a cross-sectional view showing an example of a so-called dicing die-bonding film, in which a dicing tape 10 to which the present embodiment is applied is bonded and integrated with a die-bonding film (adhesive film) 3 . As shown in FIG. 3, the dicing die-bonding film 20 has a configuration in which a die-bonding film (adhesive film) 3 is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10 .

The dicing die-bonding film 20 having such a configuration is used, for example, in the following manner in the semiconductor manufacturing process. On the die bond film 3 of the dicing die bond film 20, a semiconductor wafer having dividing grooves formed on the surface by a blade or a semiconductor wafer having a modified layer formed inside by a laser is adhered and held (adhered) and cooled. The semiconductor wafer is cleaved together with the die-bonding film 3 by expanding to obtain individual semiconductor chips with the die-bonding film 3 attached. Alternatively, a semiconductor wafer is attached and held (adhered) on the die bond film 3 of the dicing die bond film 20, and in that state, a modified layer is formed inside the semiconductor wafer by laser, and then the semiconductor wafer is cooled by expansion. It is cut together with the die-bonding film 3 to obtain individual semiconductor chips with the die-bonding film 3 attached. Next, after sufficiently expanding the kerf width between the semiconductor chips with the die-bonding film 3 by normal temperature expansion, the individual semiconductor chips with the die-bonding film 3 are separated from the adhesive layer 2 of the dicing tape 10 in a pick-up process. The obtained semiconductor chip with the die-bonding film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die-bonding film (adhesive film) 3 . Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die-bonding film 3 (the surface facing the adhesive layer 2 is The opposite side) may be provided with a base sheet (release liner) having releasability.

<Dicing tape>
(Base film)
The base film 1, which is the first component of the dicing tape 10 of the present invention, will be described below. The base film 1 contains a resin (A) made of an ethylene/unsaturated carboxylic acid copolymer ionomer (hereinafter sometimes simply referred to as "ionomer") and a polyamide resin (B). It is a resin film composed of the composition.

The total amount of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire base film 1 is 5% at -15 ° C. of the base film 1. The stress during elongation is not particularly limited as long as it is within the above range. More preferably 80% by mass, particularly preferably 90% by mass or more.

The dicing tape 10 using the base film 1 having such a configuration is used in the cool expansion process and the normal temperature expansion process of the semiconductor device manufacturing process in the form in which the die bond film 3 is adhered on the adhesive layer 2. It is suitable for That is, by the cool expansion process, the semiconductor wafer with the die-bonding film 3 that has been processed so as to be individualized is broken well along the planned dicing lines, and the individual semiconductor chips with the die-bonding film 3 of a predetermined size are yielded. Good to get. Furthermore, even in the room-temperature expansion process, the expandability necessary for ensuring a sufficient kerf width between semiconductor chips is maintained.

[Resin (A) composed of ionomer of ethylene/unsaturated carboxylic acid copolymer]
In the base film 1 of the present embodiment, the resin (A) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer contains part or all of the carboxyl groups of the ethylene/unsaturated carboxylic acid copolymer. is neutralized with a metal (ion). In the following description, "resin composed of ionomer of ethylene/unsaturated carboxylic acid copolymer" may be referred to as "resin composed of ionomer" or simply "ionomer".

The ethylene/unsaturated carboxylic acid-based copolymer constituting the ionomer is at least a two-component copolymer obtained by copolymerizing ethylene and an unsaturated carboxylic acid, and further a three-component copolymer obtained by copolymerizing a third copolymer component. It may also be a multi-element copolymer having more than one element. The ethylene/unsaturated carboxylic acid copolymer may be used alone, or two or more ethylene/unsaturated carboxylic acid copolymers may be used in combination.

Examples of the unsaturated carboxylic acid constituting the ethylene/unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic acid, and anhydride. Unsaturated carboxylic acids having 4 to 8 carbon atoms such as maleic acid are included. Acrylic acid or methacrylic acid is particularly preferred.

When the ethylene/unsaturated carboxylic acid-based copolymer is a ternary or higher multidimensional copolymer, in addition to the ethylene and unsaturated carboxylic acid that constitute the binary copolymer, the second It may contain three copolymer components. As the third copolymerization component, unsaturated carboxylic acid esters (e.g., methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, , dimethyl maleate, diethyl maleate, etc. (meth)acrylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl moiety), unsaturated hydrocarbons (eg, propylene, butene, 1,3-butadiene, pentene, 1, 3-pentadiene, 1-hexene, etc.), vinyl esters (e.g., vinyl acetate, vinyl propionate, etc.), oxides such as vinyl sulfate and vinyl nitrate, halogen compounds (e.g., vinyl chloride, vinyl fluoride, etc.), vinyl groups Contained primary and secondary amine compounds, carbon monoxide, sulfur dioxide, and the like can be mentioned, and unsaturated carboxylic acid esters are preferred as these copolymerization components.

The ethylene/unsaturated carboxylic acid copolymer may be in the form of a block copolymer, a random copolymer, or a graft copolymer, and may be a binary copolymer or a terpolymer. It's okay. Among them, a binary random copolymer, a ternary random copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable in terms of industrial availability. , more preferably a binary random copolymer or a ternary random copolymer.

Specific examples of the ethylene/unsaturated carboxylic acid copolymer include ethylene/acrylic acid copolymers, ethylene/methacrylic acid copolymers and other binary copolymers, and ethylene/methacrylic acid/2-methyl acrylate. - Terpolymers such as propyl copolymers. In addition, commercial products marketed as ethylene/unsaturated carboxylic acid copolymers may be used, for example, Nucrel series (registered trademark) manufactured by DuPont Mitsui Polychemicals, etc. may be used.

The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the ethylene/unsaturated carboxylic acid copolymer is preferably in the range of 1% by mass or more and 20% by mass or less. , and heat resistance (blocking, fusion), the range is more preferably 5% by mass or more and 15% by mass or less.

In the base film 1 of the present embodiment, the ionomer used as the resin (A) is such that the carboxyl groups contained in the ethylene/unsaturated carboxylic acid copolymer are crosslinked (neutralized) by metal ions at an arbitrary ratio. is preferred. Metal ions used for neutralizing acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions and manganese ions. Among these metal ions, magnesium ions, sodium ions and zinc ions are preferred, and sodium ions and zinc ions are more preferred, in view of the availability of industrialized products.

The degree of neutralization of the ethylene/unsaturated carboxylic acid-based copolymer in the ionomer is preferably in the range of 10 mol% or more and 85 mol% or less, and is in the range of 15 mol% or more and 82 mol % or less. is preferred. By setting the degree of neutralization to 10 mol% or more, the splittability of the semiconductor wafer with the die-bonding film can be further improved, and by setting it to 85 mol% or less, the film formability of the film can be further improved. can be done. The degree of neutralization is the compounding ratio (mol %) of metal ions with respect to the number of moles of acid groups, particularly carboxyl groups, possessed by the ethylene/unsaturated carboxylic acid copolymer.

The ionomer resin (A) has a melting point of about 85 to 100° C., and the melt flow rate (MFR) of the ionomer resin (A) is 0.2 g/10 min or more and 20.0 g/10 min. It is preferably in the range of 10 minutes, more preferably in the range of 0.5 g/10 minutes or more and 20.0 g/10 minutes or less, and in the range of 0.5 g/10 minutes or more and 18.0 g/10 minutes or less. It is even more preferable to have When the melt flow rate is within the above range, the film formability of the substrate film 1 is improved. The MFR is a value measured at 190° C. under a load of 2160 g according to JIS K7210-1999.

The resin composition constituting the base film 1 of the present embodiment further contains a polyamide resin (B) in addition to the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer described above. The mass ratio (A):(B) of the ionomer resin (A) of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) is in the range of 72:28 to 95:5. By configuring the base film 1 with the resin composition mixed in, not only can the heat resistance of the base film 1 be improved, but also the tensile strength when stretched at a low temperature (eg, -15 ° C.) The stress can also be increased, and by setting the tensile stress in an appropriate range, the dicing tape 10 using the base film 1 can be attached with the wire-embedded die bond film 3 in the cool expansion process. It is possible to impart a good breaking force for singulating semiconductor wafers with a good yield, and furthermore, to maintain good extensibility to ensure a sufficient kerf width between semiconductor chips in the normal temperature expansion process. The mass ratio (A):(B) is preferably in the range of 74:26 to 92:8, more preferably in the range of 80:20 to 90:10. The upper limit and lower limit of the numerical range of the present specification can be combined by arbitrarily selecting the relevant numerical values.

[Polyamide resin (B)]
Examples of the polyamide resin (B) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, and ethylenediamine, tetramethylenediamine, and pentamethylene. Polycondensates with diamines such as diamine, hexamethylenediamine, decamethylenediamine, 1,4-cyclohexyldiamine and m-xylylenediamine, cyclic lactam ring-opening polymers such as ε-caprolactam and ω-laurolactam, 6- Polycondensates of aminocarboxylic acids such as aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, and 12-aminododecanoic acid, or copolymers of the above cyclic lactams, dicarboxylic acids and diamines can be mentioned.

A commercial item can also be used for said polyamide resin (B). Specifically, nylon 4 (melting point 268°C), nylon 6 (melting point 225°C), nylon 46 (melting point 240°C), nylon 66 (melting point 265°C), nylon 610 (melting point 222°C), nylon 612 (melting point 215°C) ° C.), nylon 6T (melting point 260° C.), nylon 11 (melting point 185° C.), nylon 12 (melting point 175° C.), copolymer nylon (e.g., nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point 237° C.), nylon 46, and the like. Among these polyamides, nylon 6 and nylon 6/12 are preferable from the viewpoint of film formability and mechanical properties as the base film 1 .

The content of the polyamide resin (B) is the mass ratio (A) of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire base film 1. : (B) is in the range of 72:28 to 95:5. If the mass ratio of the polyamide resin (B) is less than the above range, the effect of improving the heat resistance of the base film 1 and the effect of increasing the tensile stress at low temperatures may be insufficient. On the other hand, when the mass ratio of the polyamide resin (B) exceeds the above range, stable film formation may be difficult depending on the resin composition of the base film 1 . In addition, the flexibility of the base film 1 may be impaired and the expandability in the room temperature expansion process may not be maintained, and when picking up the semiconductor chip with the die-bonding film 3, there is a risk of pick-up failure due to cracks in the semiconductor chip or the like. be. The content of the polyamide resin (B) is the mass ratio (A) of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire base film 1. : (B) is more preferably in the range of 74:26 to 92:8.

When the base film 1 is a laminate composed of multiple layers, the mass ratio of the resin (A) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) is Calculated from the mass ratio of the ionomer resin (A) and the polyamide resin (B) of the ethylene/unsaturated carboxylic acid copolymer in each layer and the mass ratio of each layer in the entire base film 1 (laminate) means the value for the entire base film 1 (laminate).

When the mass ratio of the ionomer resin (A) of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire base film 1 is within the above range, the heat resistance of the base film 1 is improved. It can be increased to about 120 to 140° C., and the base film 1 is singulated in the cool expansion process when it is processed into the shape of a dicing tape 10 and subjected to the manufacturing process of a semiconductor device. Both the processed semiconductor wafer and the die-bonding film 3 attached to the semiconductor wafer can develop tensile stress suitable for breaking along the dicing line with high yield. Furthermore, even in the room-temperature expansion step, it is possible to exhibit expandability capable of ensuring a sufficient kerf width between the cut semiconductor chips.

[others]
If necessary, other resins and various additives may be added to the resin composition constituting the substrate film 1 as long as the effects of the present invention are not impaired. Examples of the other resins include polyolefins such as polyethylene and polypropylene, ethylene/unsaturated carboxylic acid copolymers, and polyether ester amides. Such other resin is, for example, a ratio of 20 parts by mass or less with respect to a total of 100 parts by mass of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B). can be blended with Examples of the above additives include antistatic agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, antiblocking agents, antifungal agents, antibacterial agents, flame retardants, A flame retardant aid, a cross-linking agent, a cross-linking aid, a foaming agent, a foaming aid, an inorganic filler, a fiber reinforcing material, and the like can be mentioned. Such various additives are, for example, 5 parts by mass or less with respect to a total of 100 parts by mass of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B). can be blended with

[Tensile stress of base film]
In the base film 1, the tensile stress at −15° C. at 5% elongation is the MD direction (the flow direction when the base film is formed) and the TD direction (perpendicular to the MD direction). direction), the range is 15.5 MPa or more and 28.5 MPa or less. By setting the tensile stress of the base film 1 at −15° C. at 5% elongation within the above range, the base film 1 is processed into the shape of the dicing tape 10 and subjected to the semiconductor device manufacturing process. In the cool expansion process, the internal stress generated by the omnidirectional tension of the dicing tape 10 causes the semiconductor wafer processed to be singulated and the die bond film 3 attached to the semiconductor wafer to move along the planned dicing line. The external stress can be of sufficient magnitude to allow fracturing with ease. Furthermore, even in the normal temperature expansion process, a sufficient kerf width between the cut semiconductor chips can be ensured. Furthermore, the low-angle adhesion of the dicing tape 10 to the die-bonding film 3 after ultraviolet (UV) irradiation can be appropriately reduced. As a result, in the dicing process, the cutting yield of the semiconductor chips with the die-bonding film 3 can be improved. Furthermore, it is possible to suppress the induction of pick-up errors in the pick-up process. The tensile stress is preferably in the range of 16.0 MPa to 27.4 MPa, more preferably in the range of 17.3 MPa to 24.8 MPa.

[Thickness of base film]
The thickness of the base film 1 is not particularly limited, but considering its use as the dicing tape 10, it is preferably in the range of 70 μm or more and 120 μm or less, for example. More preferably, it is in the range of 80 µm or more and 100 µm or less. If the thickness of the base film 1 is less than 70 μm, the ring frame (wafer ring) may not be sufficiently held when the dicing tape 10 is subjected to the dicing process. Further, if the thickness of the base film 1 exceeds 120 μm, there is a possibility that the warping due to the release of the residual stress during film formation of the base film 1 may increase.

[Configuration of base film]
The structure of the base film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate composed of multiple layers of the same resin composition, or different resins. It may be a laminate comprising multiple layers of the composition. In the case of a laminated body composed of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.
When the base film 1 is a laminate composed of a plurality of layers, for example, it may have a structure in which a plurality of layers formed using the resin composition of the present embodiment are laminated. A layer formed using a resin composition other than the resin composition of the present embodiment may be laminated on a layer formed using the resin composition of the embodiment. However, the mass ratio (A):(B) between the ionomer resin (A) of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (B) in the entire laminate is 72:28 to 95. :5 range.

Layers formed using the above other resin compositions include, for example, linear low density polyethylene (LLDPE), low density polyethylene (LDPE), ethylene-α olefin copolymer, polypropylene, ethylene/unsaturated carboxylic acid Acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid Alkyl ester/carbon monoxide copolymers, or blends consisting of a single substance or a plurality of selected unsaturated carboxylic acid graft products thereof, ionomer (A) of the above ethylene/unsaturated carboxylic acid copolymer, etc. and a layer formed using the resin composition of the above. Among these, from the viewpoint of adhesion and versatility between the resin layer made of a mixture of the resin (A) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B) , ethylene/unsaturated carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer and ionomers of these copolymers are preferred. .

Specific examples of the case where the base film 1 of the present embodiment has a laminated structure include the following base films having a two-layer structure, a three-layer structure, and the like.
As a two-layer structure, for example,
(1) [Resin layer composed of a mixture of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B): (AB-1)]/[This embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (B) in the form of: (AB-1)],
(2) [Resin layer composed of a mixture of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B): (AB-1)]/[This embodiment Resin layer made of a mixture of a resin (A) made of an ethylene/unsaturated carboxylic acid copolymer ionomer and a polyamide resin (B) in the form of: (AB-2)],
(3) [Resin layer composed of resin (A) composed of ionomer of ethylene/unsaturated carboxylic acid copolymer: (A-1)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment Resin layer made of a mixture of a resin (A) made of an ionomer and a polyamide resin (B): (AB-1)],
(4) [Resin layer composed of ethylene/unsaturated carboxylic acid copolymer: (C-1)]/[Resin (A) composed of ionomer of ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a resin layer made of a mixture of a polyamide resin (B): (AB-1)],
and a two-layer (first layer/second layer) structure composed of the same resin layer or different resin layers.
As a three-layer structure, for example,
(5) [Resin layer composed of a mixture of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B): (AB-1)]/[This embodiment Resin layer made of a mixture of a resin (A) made of an ethylene/unsaturated carboxylic acid copolymer ionomer in the form of and a polyamide resin (B): (AB-1)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of a saturated carboxylic acid copolymer and a polyamide resin (B): (AB-1)],
(6) [Resin layer composed of a mixture of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B): (AB-1)]/[This embodiment Resin layer made of a mixture of a resin (A) made of an ethylene/unsaturated carboxylic acid copolymer ionomer in the form of and a polyamide resin (B): (AB-2)]/[Ethylene/unsaturated carboxylic acid copolymer of the present embodiment A resin layer comprising a mixture of a resin (A) comprising an ionomer of a saturated carboxylic acid copolymer and a polyamide resin (B): (AB-1)],
(7) [Resin layer composed of a mixture of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B): (AB-1)]/[ethylene Resin layer made of resin (A) made of unsaturated carboxylic acid copolymer ionomer: (A-1)]/[Resin made of ethylene/unsaturated carboxylic acid copolymer ionomer of the present embodiment ( Resin layer made of a mixture of A) and polyamide resin (B): (AB-1)],
(8) [Resin layer composed of a mixture of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer of the present embodiment and the polyamide resin (B): (AB-1)]/[ethylene Resin layer (C-1) composed of unsaturated carboxylic acid-based copolymer]/[Resin (A) composed of ionomer of ethylene/unsaturated carboxylic acid-based copolymer of the present embodiment and polyamide resin (B) Resin layer made of a mixture: (AB-1)],
A three-layer (first layer/second layer/third layer) structure composed of the same resin layer or different resin layers such as the above is exemplified.

[Method for forming base film]
As a film forming method for the base film 1 of the present embodiment, conventional methods can be adopted. The ionomer resin (A), the polyamide resin (B), and, if necessary, other components are added and the resin composition is melt-kneaded, for example, by T die casting molding method, T die nip molding method, inflation molding method, extrusion lamination It may be processed into a film form by various molding methods such as a method, a calendar molding method, and the like. In the case where the base film 1 is a laminate composed of a plurality of layers, each layer is formed separately by means such as a calendar molding method, an extrusion method, an inflation molding method, etc., and these are thermally laminated or bonded with an appropriate adhesive. A laminate can be produced by laminating by means of Examples of the adhesive include a single substance or a blend of a plurality of selected from the aforementioned various ethylene copolymers or unsaturated carboxylic acid-grafted products thereof. A laminate can also be produced by simultaneously extruding the resin compositions of each layer by a co-extrusion lamination method. The surface of the base film 1 that contacts the pressure-sensitive adhesive layer 2 may be subjected to corona treatment, plasma treatment, or the like for the purpose of improving adhesion to the pressure-sensitive adhesive layer 2, which will be described later. In addition, the surface opposite to the surface of the base film 1 in contact with the adhesive layer 2 is coated with a crimp roll for the purpose of stabilizing winding during film formation of the base film 1 and preventing blocking after film formation. embossing or the like may be performed.

(Adhesive layer)
The adhesive layer 2 containing the active energy ray-curable adhesive composition, which is the second constituent element of the dicing tape 10 of the present invention, will be described below.

[Acrylic adhesive polymer]
The acrylic adhesive polymer contained as a main component in the active energy ray-curable adhesive composition is an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group. The acrylic adhesive polymer accounts for preferably 90 mass % or more, more preferably 95 mass % or more, of the total mass of the active energy ray-curable pressure-sensitive adhesive composition.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group will be described in detail later, but usually a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer are used as the base polymer. to obtain a copolymer (acrylic adhesive polymer having a hydroxyl group), which has an isocyanate group and a carbon-carbon double bond capable of undergoing an addition reaction with the hydroxyl group of the copolymer. It is obtained by a method of subjecting a compound (active energy ray-reactive compound) to an addition reaction.

As described above, the main chain (main skeleton) of the acrylic adhesive polymer having a hydroxyl group is a copolymer containing at least a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer as copolymer components. Consists of a polymer. The copolymer composition of the acrylic adhesive polymer (copolymer) having a hydroxyl group is adjusted so that the glass transition temperature (Tg) of the main chain is in the range of −65° C. or more and −50° C. or less. be. Here, the glass transition temperature (Tg) is a theoretical value calculated from the Fox formula shown in the following general formula (1) based on the composition of the monomer (monomer) component that constitutes the acrylic adhesive polymer. be.
1/Tg= _W1 / _Tg1 + _W2 / _Tg2 +...+ _Wn / _Tgn general formula (1)
[In the above general formula (1), Tg is the glass transition temperature (unit: K) of the acrylic adhesive polymer, and Tg _i (i = 1, 2, ... n) is the homopolymer of the monomer i. is the glass transition temperature (unit: K) at the time of formation, and W _i (i=1, 2, . . . n) represents the mass fraction of monomer i in all monomer components. ]
Glass transition temperatures (Tg) of homopolymers can be found, for example, in the "Polymer Handbook" (edited by J. Brandrup and EH Immergut, Interscience Publishers).

When the glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer (copolymer) having a hydroxyl group is lower than −65° C., the adhesive layer 2 containing the copolymer becomes excessively soft. As a result, there is a risk that the semiconductor chip with the die-bonding film will be difficult to separate from the adhesive layer 2 in the pick-up process after UV irradiation, or that the adhesive residue (contamination) will occur on the surface of the die-bonding film. As a result, the yield of non-defective semiconductor chips decreases. On the other hand, if the glass transition temperature (Tg) exceeds −50° C., the toughness of the pressure-sensitive adhesive layer 2 containing them is reduced, so wettability and conformability to the die-bonding film 3 are deteriorated. There is a possibility that the adhesion may be deteriorated, or the impact force when the semiconductor wafer or the die-bonding film 3 is cleaved at low temperature may not be sufficiently relieved and may easily propagate to the interface between the adhesive layer 2 and the die-bonding film 3. . As a result, the die-bonding film 3 tends to be lifted from the pressure-sensitive adhesive layer 2 in the cool-expanding process, and the yield of non-defective semiconductor chips is reduced. The glass transition temperature (Tg) is preferably in the range of -63°C or higher and -51°C or lower, more preferably in the range of -61°C or higher and -54°C or lower.

Examples of the (meth)acrylic acid alkyl ester monomer include hexyl (meth)acrylate having 6 to 18 carbon atoms, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl ( meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, or monomers having 5 or less carbon atoms, pentyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl ( meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate and the like. Among these, it is preferable to use 2-ethylhexyl acrylate, which is 40% by mass or more and 85% by mass based on the total amount of monomer components constituting the main chain of the acrylic adhesive polymer (copolymer) having a hydroxyl group. It is preferable to include in the following range.

Examples of hydroxyl group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8- Hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate and the like. The purpose of copolymerizing the hydroxyl group monomer is, first, to the acrylic adhesive polymer, an addition reaction point for introducing an active energy ray-reactive carbon-carbon double bond, which will be described later, by an addition reaction. In order to make it (-OH), secondly, in order to make it a cross-linking reaction point for increasing the molecular weight of the acrylic adhesive polymer by reacting with the isocyanate group (-NCO) of the polyisocyanate-based cross-linking agent described later, Third, in order to make it an active point (polar point) for improving the initial adhesion between the adhesive layer 2 and the die bond film 3 after the cross-linking reaction, the active energy ray reactive carbon-carbon double When a bond is introduced by an addition reaction using a hydroxyl group possessed by an acrylic adhesive polymer, as a guideline, the content of the hydroxyl group monomer is 15% with respect to the total amount of copolymer monomer components. It is preferable to adjust the amount in the range of 31% by mass or more and 31% by mass or more. That is, adjusting the content of the hydroxyl group monomer in the copolymer within the above range is a constituent requirement of the pressure-sensitive adhesive composition of the present invention. Equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate-based cross-linking agent and the hydroxyl group (OH) of the acrylic adhesive polymer, the residual hydroxyl group concentration after the cross-linking reaction, and the active energy ray-reactive carbon - It is preferable because it becomes easy to control the carbon double bond concentration within the predetermined range described above.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is, after copolymerizing the acrylic adhesive polymer having a hydroxyl group, the hydroxyl group of the copolymer in the side chain. A compound having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compound) capable of undergoing an addition reaction through addition reaction can be obtained by a method of addition reaction, easiness of reaction tracking (control stability) and technical difficulty, it is the most suitable. Such a compound having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compound) includes, for example, an isocyanate compound having a (meth)acryloyloxy group. Specific examples include 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate and the like.

In the above addition reaction, it is preferable to use a polymerization inhibitor so as to maintain the active energy ray reactivity of the carbon-carbon double bond. As such a polymerization inhibitor, a quinone-based polymerization inhibitor such as hydroquinone monomethyl ether is preferable. Although the amount of the polymerization inhibitor is not particularly limited, it is usually preferably in the range of 0.01 parts by mass or more and 0.1 parts by mass or less with respect to 100 parts by mass of the acrylic adhesive polymer.

When performing the addition reaction, (1) the acrylic adhesive polymer is crosslinked with a polyisocyanate-based crosslinking agent added later to further increase the molecular weight, and (2) the adhesive layer after the crosslinking reaction In order to improve the initial adhesion between 2 and die-bonding film 3, it is necessary to allow a predetermined amount of hydroxyl groups to remain in the pressure-sensitive adhesive composition after the cross-linking reaction. On the other hand, it is also necessary to control the active energy ray-reactive carbon-carbon double bond concentration within a predetermined range. Where it is necessary to take both of these points into consideration, for example, when reacting an isocyanate compound having a (meth)acryloyloxy group with a copolymer having a hydroxyl group in the side chain, the (meth) ) The isocyanate compound having an acryloyloxy group can be added to the hydroxyl group-containing monomer of the acrylic adhesive polymer in an amount in the range of 37 mol% or more and 85 mol% or less. preferable.

In addition to the (meth)acrylic acid alkyl ester monomer and the hydroxyl group-containing monomer, the acrylic adhesive polymer may be used for the purpose of adjusting adhesive strength, glass transition temperature (Tg), etc., if necessary. The copolymerizable monomer component may be copolymerized. Such other copolymerizable monomer components include, for example, carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; maleic anhydride; Acid anhydride group-containing monomers such as itaconic acid, (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol (meth)acrylamide, N-methylolpropane (meth) ) Amide-based monomers such as acrylamide, N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, ( Monomers having functional groups such as amino group-containing monomers such as t-butylaminoethyl meth)acrylate and glycidyl group-containing monomers such as glycidyl (meth)acrylate can be used. Although the content of the monomer having such a functional group is not particularly limited, it is preferably in the range of 0.5% by mass or more and 30% by mass or less based on the total amount of the copolymerizable monomer components.

When such a monomer having a functional group other than a hydroxyl group is copolymerized, the functional group is used to introduce an active energy ray-reactive carbon-carbon double bond into the acrylic adhesive polymer. can also For example, when the acrylic adhesive polymer has a carboxyl group in the side chain, a method of reacting with an active energy ray-reactive compound such as glycidyl (meth)acrylate or 2-(1-aziridinyl)ethyl (meth)acrylate, acrylic When the system adhesive polymer has a glycidyl group in the side chain, the acrylic adhesive polymer is reacted with an active energy ray -reactive compound such as (meth)acrylic acid, etc., to add an active energy ray-reactive carbon-carbon A double bond can also be introduced. However, when a monomer having a functional group other than a hydroxyl group is copolymerized and the functional group is used to introduce an active energy ray-reactive carbon-carbon double bond into the acrylic adhesive polymer, one guideline is As such, the content of the hydroxyl group monomer to be copolymerized at the same time is preferably adjusted in the range of 3% by mass or more and 15% by mass or less with respect to the total amount of the copolymer monomer components. By doing so, the hydroxyl value of the acrylic adhesive polymer, the equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate crosslinking agent described later and the hydroxyl group (OH) of the acrylic adhesive polymer, and This is preferable because it becomes easy to control the residual hydroxyl group concentration after the cross-linking reaction within the predetermined range described above.

Furthermore, the acrylic adhesive polymer having the above functional group contains other comonomer components as necessary for the purpose of cohesive strength, heat resistance, etc., within a range that does not impair the effects of the present invention. You may Specific examples of such other copolymerizable monomer components include cyano group-containing monomers such as (meth)acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene and isobutylene. , styrene, α-methylstyrene, vinyl toluene and other styrene monomers, vinyl acetate, vinyl propionate and other vinyl ester monomers, methyl vinyl ether, ethyl vinyl ether and other vinyl ether monomers, vinyl chloride, chloride Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-( Examples include monomers having a nitrogen atom-containing ring such as meth)acryloylmorpholine. These other comonomer components may be used alone or in combination of two or more.

In the present embodiment, a suitable copolymer having a hydroxyl group obtained by copolymerizing the above-described monomers is specifically a binary copolymer of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate. , a terpolymer of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, a terpolymer of 2-ethylhexyl acrylate, n-butyl acrylate and 2-hydroxyethyl acrylate, Terpolymer of 2-ethylhexyl acrylate, methyl methacrylate and 2-hydroxyethyl acrylate, quaternary copolymer of 2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid Polymers, quaternary copolymers of 2-ethylhexyl acrylate, methyl methacrylate, 2-hydroxyethyl acrylate, and methacrylic acid, etc. may be mentioned, but not limited thereto. Then, 2-methacryloyloxyethyl isocyanate is added to these suitable copolymers as an isocyanate compound having a (meth)acryloyloxy group to have an active energy ray-reactive carbon-carbon double bond and a hydroxyl group. An acrylic adhesive polymer is preferred.

The thus obtained acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups has a hydroxyl value in the range of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less. If the hydroxyl value is less than 12.0 mgKOH/g, the concentration of residual hydroxyl groups in the pressure-sensitive adhesive composition after the cross-linking reaction becomes small, and the initial adhesion of the pressure-sensitive adhesive layer 2 to the die bond film 3 may deteriorate. As a result, the die-bonding film 3 tends to be lifted from the pressure-sensitive adhesive layer 2 in the cool-expanding process, and the yield of non-defective semiconductor chips decreases. On the other hand, when the hydroxyl value exceeds 55.0 mgKOH/g, the concentration of residual hydroxyl groups in the pressure-sensitive adhesive composition after the cross-linking reaction becomes excessively large, and the initial adhesion of the pressure-sensitive adhesive layer 2 to the die bond film 3 becomes unnecessarily large. may become As a result, the semiconductor chip with the die-bonding film becomes difficult to separate from the pressure-sensitive adhesive layer 2 in the pick-up process after ultraviolet irradiation, and the pick-up yield of the semiconductor chip decreases. The hydroxyl value is preferably in the range of 12.7 mgKOH/g or more and 53.2 mgKOH/g or less, more preferably in the range of 17.0 mgKOH/g or more and 39.0 mgKOH/g or less.

Further, the acrylic adhesive polymer having the active energy ray-reactive carbon-carbon double bond and hydroxyl group preferably has an acid value in the range of 0 mgKOH/g or more and 9.0 mgKOH/g or less. When the acid value is within the above range, it is possible to prevent the die-bonding film 3 from floating from the pressure-sensitive adhesive layer 2 in the cool expanding process without impairing the effect of reducing the adhesive strength of the pressure-sensitive adhesive layer 2 due to ultraviolet irradiation. The acid value is preferably in the range of 2.0 mgKOH/g or more and 8.2 mgKOH/g or less, more preferably in the range of 2.5 mgKOH/g or more and 5.5 mgKOH/g or less.

Further, the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups preferably has a weight average molecular weight Mw in the range of 200,000 to 600,000. When the weight-average molecular weight Mw of the acrylic adhesive polymer is less than 200,000, a high-viscosity active energy ray-curable acrylic adhesive of several thousand cP or more and tens of thousands of cP or less is used in consideration of coatability and the like. It is difficult to obtain a solution of the composition, which is undesirable. In addition, the cohesive force of the adhesive layer 2 before the irradiation of the active energy ray becomes small, and when the semiconductor chip with the die bonding film 3 is separated from the adhesive layer 2 after the irradiation with the active energy ray, the semiconductor wafer with the die bonding film 3 is contaminated. There is a risk of On the other hand, when the weight-average molecular weight Mw exceeds 600,000, the wettability and conformability of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 are lowered, and the initial adhesive strength is lowered. Lifting from the pressure-sensitive adhesive layer 2 may occur. Here, the weight average molecular weight Mw means a standard polystyrene conversion value measured by gel permeation chromatography. The weight average molecular weight Mw is preferably in the range of 330,000 to 550,000, more preferably in the range of 350,000 to 400,000.

[Crosslinking agent]
The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment further includes polyisocyanate cross-linking for increasing the molecular weight of the acrylic pressure-sensitive adhesive polymer having the above-described active energy ray-reactive carbon-carbon double bond and hydroxyl group. containing agents. Examples of the polyisocyanate-based cross-linking agent include polyisocyanate compounds having an isocyanurate ring, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and hexamethylene diisocyanate, and adducts obtained by reacting trimethylolpropane and tolylene diisocyanate. Examples include polyisocyanate compounds, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and isophorone diisocyanate. These can be used singly or in combination of two or more. Among these, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and tolylene diisocyanate and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and hexamethylene diisocyanate are preferably used from the viewpoint of versatility.

The polyisocyanate-based cross-linking agent has a glass transition temperature (Tg) of the above-mentioned polymer main chain in the range of −65° C. or more and −50° C. or less, and a hydroxyl value in the range of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less. For an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, the isocyanate group (NCO) possessed by the polyisocyanate cross-linking agent and the hydroxyl group possessed by the acrylic adhesive polymer ( OH) is adjusted so that the equivalent ratio (NCO/OH) is in the range of 0.02 or more and 0.20 or less. By adjusting the added amount of the polyisocyanate-based cross-linking agent in this manner, the residual hydroxyl group concentration after the cross-linking reaction per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is controlled within the range of 0.18 mmol or more and 0.90 mmol or less. can do. In the present invention, "1 g of the active energy ray-curable adhesive composition" means "1 g of the adhesive composition (solid content) excluding the photopolymerization initiator described later", that is, "acrylic adhesive polymer and poly 1 g of a pressure-sensitive adhesive composition (solid content) composed of an isocyanate-based cross-linking agent. In addition, when the pressure-sensitive adhesive composition contains other components described later, the other components are also added to the weight of the pressure-sensitive adhesive composition. The equivalent ratio (NCO/OH) is preferably in the range of 0.04 to 0.19, more preferably in the range of 0.07 to 0.14.

Here, the equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate-based cross-linking agent and the hydroxyl group (OH) of the acrylic adhesive polymer is The total number of moles of isocyanate groups calculated from the content of the polyisocyanate-based cross-linking agent and the average number of isocyanate groups per molecule of the polyisocyanate-based cross-linking agent in the active energy ray-reactive carbon-carbon double It is a theoretically calculated value divided by the total number of moles of hydroxyl groups possessed by the acrylic adhesive polymer after the introduction of bonds. The total number of moles of the hydroxyl groups has, for example, (meth)acryloyloxy groups for introducing active energy ray-reactive carbon-carbon double bonds to the acrylic adhesive polymer having hydroxyl groups, which is the base polymer. When an addition reaction is performed using an isocyanate compound, the total number of moles of hydroxyl groups in the acrylic adhesive polymer, which is the base polymer, is theoretically determined by the cross-linking reaction with the isocyanate groups of the added isocyanate compound having a (meth)acryloyloxy group. It is a value obtained by subtracting the number of moles of hydroxyl groups (=the number of moles of isocyanate groups of the isocyanate compound having a (meth)acryloyloxy group) that is consumed for the purpose.

Similarly, the residual hydroxyl group concentration after the cross-linking reaction per 1 g of the active energy ray-curable adhesive composition is the number of hydroxyl groups possessed by the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups. The value obtained by subtracting the number of moles of hydroxyl groups theoretically consumed by the cross-linking reaction with the isocyanate groups of the added polyisocyanate-based cross-linking agent (= the number of moles of the isocyanate groups of the cross-linking agent) from the total number of moles is the active energy ray. It is converted per 1 g of the curable pressure-sensitive adhesive composition.

If the equivalent ratio (NCO/OH) is less than 0.02, the cohesive force of the adhesive layer 2 is insufficient, and in the pick-up process after UV irradiation, the semiconductor chip with the die bonding film 3 is removed from the adhesive layer 2. There is a risk that it will be difficult to separate from the die-bonding film, a risk that adhesive residue (contamination) will occur on the surface of the die-bonding film, and a risk that the die-bonding film 3 will be difficult to cut. Moreover, especially when the hydroxyl value is large, the residual hydroxyl group concentration after the cross-linking reaction becomes too large, and the initial adhesion between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 becomes unnecessarily large. The semiconductor chip with the film 3 may become difficult to separate from the adhesive layer 2 . As a result, the yield of non-defective semiconductor chips decreases. On the other hand, if the equivalent ratio (NCO/OH) exceeds 0.20, depending on the hydroxyl value, the toughness of the pressure-sensitive adhesive layer 2 after the cross-linking reaction may be too low, that is, the pressure-sensitive adhesive layer 2 may become too hard. , the wettability and conformability of the adhesive layer 2 to the die bond film 3 are deteriorated, the risk of deterioration of the initial adhesion to the die bond film 3, and the impact force when the semiconductor wafer or the die bond film 3 is cut by cool expansion. There is a possibility that the impact force may be easily propagated to the interface between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 due to insufficient relaxation. As a result, the die-bonding film 3 tends to be lifted from the pressure-sensitive adhesive layer 2 in the cool-expanding process, and the yield of non-defective semiconductor chips is reduced.

The equivalent ratio (NCO/OH) between the isocyanate group (NCO) possessed by the polyisocyanate-based cross-linking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer is within the range of 0.02 or more and 0.20 or less. And, the glass transition temperature (Tg) of the polymer main chain is in the range of -65 ° C. or higher and -50 ° C. or lower, and the hydroxyl value is in the range of 12.0 mgKOH / g or higher and 55.0 mgKOH / g or lower. It becomes easy to control the residual hydroxyl group concentration after the cross-linking reaction per 1 g of the active energy ray-curable pressure-sensitive adhesive composition used as a component in the range of 0.18 mmol or more and 0.90 mmol or less. By doing so, the interaction between the hydroxyl group and the silica filler or the like on the surface of the die-bonding film 3 is enhanced, the initial adhesion between the adhesive layer 2 and the die-bonding film 3 is moderately improved, and the adhesive after the cross-linking reaction It is possible to prevent the toughness of the layer 2 itself from lowering more than necessary, and to appropriately maintain the tackiness and impact relaxation properties. As a result, in the cool expansion process, the die-bonding film 3 is prevented from floating from the pressure-sensitive adhesive layer 2, and the yield of non-defective semiconductor chips is improved. The residual hydroxyl group concentration is preferably in the range of 0.29 mmol or more and 0.60 mmol or less, more preferably in the range of 0.30 mmol or more and 0.37 mmol or less.

After forming the pressure-sensitive adhesive layer 2 from the active energy ray-curable pressure-sensitive adhesive composition, the aging conditions for reacting the polyisocyanate-based cross-linking agent and the hydroxyl group-containing acrylic pressure-sensitive adhesive polymer are particularly limited. However, for example, the temperature may be appropriately set within the range of 23° C. or more and 80° C. or less, and the time may be set within the range of 24 hours or more and 168 hours or less.

[Photoinitiator]
The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment contains a photopolymerization initiator that generates radicals upon exposure to active energy rays. The photopolymerization initiator receives irradiation of an active energy ray to the active energy ray-curable acrylic pressure-sensitive adhesive composition to generate radicals, and the carbon-carbon double bond possessed by the active energy ray-curable acrylic pressure-sensitive adhesive polymer. Initiate the cross-linking reaction of the bond.

The photopolymerization initiator is not particularly limited, and conventionally known ones can be used. Examples thereof include alkylphenone-based radical polymerization initiators, acylphosphine oxide-based radical polymerization initiators, oxime ester-based radical polymerization initiators, and the like. Examples of the alkylphenone-based radical polymerization initiator include benzylmethylketal-based radical polymerization initiators, α-hydroxyalkylphenone-based radical polymerization initiators, aminoalkylphenone-based radical polymerization initiators, and the like. Specific examples of the benzyl methyl ketal-based radical polymerization initiator include, for example, 2,2′-dimethoxy-1,2-diphenylethan-1-one (for example, product name Omnirad 651, manufactured by IGM Resins B.V. ) and the like. Specific examples of α-hydroxyalkylphenone-based radical polymerization initiators include, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V.) , 1-hydroxycyclohexylphenyl ketone (trade name Omnirad 184, manufactured by IGM Resins BV), 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1- ON (trade name Omnirad 2959, manufactured by IGM Resins B.V.), 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropane-1- ON (trade name Omnirad 127, manufactured by IGM Resins B.V.) and the like. Specific examples of aminoalkylphenone-based radical polymerization initiators include, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, IGM Resins B.V. company) or 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone (trade name Omnirad 369, IGM Resins B.V.). Examples of acylphosphine oxide-based radical polymerization initiators include, for example, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: Omnirad TPO, manufactured by IGM Resins B.V.), bis(2,4 ,6-trimethylbenzoyl)-phenylphosphine oxide (trade name Omnirad819, manufactured by IGM Resins B.V.), and oxime ester-based radical polymerization initiators such as (2E)-2-(benzoyloxyimino)-1-[ 4-(phenylthio)phenyl]octan-1-one (trade name OmniradOXE-01, manufactured by IGM Resins B.V.) and the like. These photopolymerization initiators may be used alone or in combination of two or more.

The amount of the photopolymerization initiator added is in the range of 0.1 parts by mass or more and 10.0 parts by mass or less with respect to 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. preferable. If the amount of the photopolymerization initiator added is less than 0.1 parts by mass, the photo-radical crosslinking reaction of the acrylic adhesive polymer is not sufficient even if the active energy ray is irradiated because the photoreactivity with respect to the active energy ray is insufficient. does not occur sufficiently, and as a result, the effect of reducing the adhesive strength of the adhesive layer 2 after irradiation with active energy rays is reduced, and there is a risk that pick-up failures of semiconductor chips may increase. On the other hand, when the amount of the photopolymerization initiator added exceeds 10.0 parts by mass, the effect is saturated, which is not preferable from the viewpoint of economy. Moreover, depending on the type of photopolymerization initiator, the pressure-sensitive adhesive layer 2 may turn yellow and have a poor appearance.

As a sensitizer for such a photopolymerization initiator, compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate may be added to the active energy ray-curable acrylic pressure-sensitive adhesive composition.

[others]
The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment may, if necessary, additionally contain an active energy ray-curable compound (e.g., polyfunctional urethane acrylate system oligomers, etc.), tackifiers, fillers, antioxidants, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents, and other additives may be added.

[Active energy ray reactive carbon-carbon double bond concentration]
The active energy ray-curable adhesive composition of the present embodiment has an active energy ray-reactive carbon-carbon double bond concentration of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable adhesive composition. adjusted to fit the range. When the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is less than 0.85 mmol, after the cross-linking reaction per 1 g of the above-described active energy ray-curable pressure-sensitive adhesive composition If the residual hydroxyl group concentration of is high, the adhesive strength of the adhesive layer 2 after ultraviolet irradiation may not be sufficiently reduced, and the semiconductor chip with the die bond film 3 may be difficult to separate from the adhesive layer 2 in the pick-up process. On the other hand, when the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable pressure-sensitive adhesive composition exceeds 1.60 mmol, the cross-linking per 1 g of the above-described active energy ray-curable pressure-sensitive adhesive composition It may become difficult to ensure the residual hydroxyl group concentration after the reaction, and depending on the copolymerization composition of the acrylic adhesive polymer, gelation may occur during polymerization or reaction during synthesis, which may make synthesis difficult. When confirming the carbon-carbon double bond content of the acrylic adhesive polymer, the carbon-carbon double bond content can be calculated by measuring the iodine value of the acrylic adhesive polymer.

When the active energy ray-reactive carbon-carbon double bond concentration is within the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable adhesive composition, the adhesive layer 2 with respect to the die bond film 3 Even when applying the adhesive layer 2 containing an active energy ray-curable adhesive composition that improves the initial adhesion and the toughness of the adhesive layer 2 itself, the adhesive layer 2 after ultraviolet irradiation with respect to the die bond film 3 The adhesive force is sufficiently lowered, and the peeling (pickup property) of the semiconductor chip with the die-bonding film 3 from the adhesive layer 2 is improved. The active energy ray-reactive carbon-carbon double bond concentration is preferably in the range of 1.02 mmol or more and 1.51 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

[Thickness of adhesive layer]
The thickness of the pressure-sensitive adhesive layer 2 of the present embodiment is not particularly limited, but is preferably in the range of 5 μm or more and 50 μm or less, more preferably 6 μm or more and 20 μm or less, and particularly preferably 7 μm or more and 15 μm or less. . If the thickness of the adhesive layer 2 is less than 5 μm, the adhesive force of the dicing tape 10 may be excessively lowered. In this case, the die-bonding film 3 tends to be lifted from the pressure-sensitive adhesive layer 2 in the cool-expanding process, and the yield of non-defective semiconductor chips decreases. Further, when used as a dicing die-bonding film, adhesion failure between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 may occur. On the other hand, if the thickness of the adhesive layer 2 exceeds 50 μm, the internal stress generated when the dicing tape 10 is cool-expanded may be difficult to transmit to the semiconductor wafer with the die-bonding film 3 as external stress. In this case, the cutting yield of the semiconductor chip with the die-bonding film 3 may be lowered in the dicing process. Moreover, from the viewpoint of economy, it is not so preferable for practical use.

(Anchor coat layer)
In the dicing tape 10 of the present embodiment, the base film 1 and the pressure-sensitive adhesive layer 2 are adjusted according to the manufacturing conditions of the dicing tape 10, the usage conditions of the dicing tape 10 after manufacturing, etc., as long as the effects of the present invention are not impaired. An anchor coat layer that matches the composition of the base film 1 may be provided between. By providing the anchor coat layer, the adhesion between the base film 1 and the pressure-sensitive adhesive layer 2 is improved.

(Release liner)
A release liner may be provided on the surface of the pressure-sensitive adhesive layer 2 opposite to the base film 1 (one surface), if necessary. Materials that can be used as the release liner are not particularly limited, and examples thereof include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, papers, and the like. In addition, the surface of the release liner may be subjected to a release treatment with a silicone-based release agent, a long-chain alkyl-based release agent, a fluorine-based release agent, or the like, in order to enhance the release property of the pressure-sensitive adhesive layer 2 . The thickness of the release liner is not particularly limited, but a release liner in the range of 10 μm or more and 200 μm or less can be preferably used.

(Manufacturing method of dicing tape)
FIG. 4 is a flow chart explaining a method for manufacturing the dicing tape 10. As shown in FIG. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution for the adhesive layer 2 (coating solution for forming the adhesive layer), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparing step). The coating solution can be prepared, for example, by uniformly mixing and stirring an acrylic adhesive polymer, a cross-linking agent, and a diluent solvent, which are constituent components of the adhesive layer 2 . As the solvent, for example, general-purpose organic solvents such as toluene and ethyl acetate can be used.

Then, using the coating solution for the adhesive layer 2 prepared in step S102, the coating solution is applied onto the release-treated surface of the release liner and dried to form the adhesive layer 2 having a predetermined thickness (step S103: adhesive layer forming step). The coating method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like can be used. Although the drying conditions are not particularly limited, for example, it is preferable that the drying temperature is in the range of 80° C. or higher and 150° C. or lower, and the drying time is in the range of 0.5 minute or longer and 5 minutes or shorter. Subsequently, the base film 1 is prepared (step S104: base film preparation step). Then, the base film 1 is laminated onto the pressure-sensitive adhesive layer 2 formed on the release liner (step S105: base film laminating step). Finally, the formed pressure-sensitive adhesive layer 2 is aged, for example, in an environment of 40° C. for 72 hours to allow the acrylic pressure-sensitive adhesive polymer and the cross-linking agent to react to cross-link and harden (step S106: thermosetting step). Through the above steps, the dicing tape 10 having the adhesive layer 2 and the release liner on the substrate film 1 in order from the substrate film side can be manufactured. In the present invention, a laminate having a release liner on the pressure-sensitive adhesive layer 2 may also be referred to as the dicing tape 10 .

In addition, as a method of forming the adhesive layer 2 on the base film 1, the coating solution for the adhesive layer 2 is applied on the release liner and dried, and then the substrate is coated on the adhesive layer 2. Although the method of laminating the film 1 is exemplified, a method of directly applying the coating solution for the pressure-sensitive adhesive layer 2 onto the base film 1 and drying it may be used. From the viewpoint of stable production, the former method is preferably used.

Although the details will be described later, the dicing tape 10 has a low-angle adhesive strength (peeling angle of 30°, peeling speed of 600 mm/min) after ultraviolet irradiation of the adhesive layer 2 to the die-bonding film 3 at 23 ° C. is 0.95 N / 25 mm or less. and the adhesive layer 2 to the die-bonding film 3 preferably has a shear adhesive strength of 100.0 N/100 mm ² or more at −30° C. before ultraviolet irradiation (tensile speed of 1,000 mm/min).

The dicing tape 10 of the present embodiment may be in the form of being wound into a roll or in the form of laminating wide sheets. Alternatively, the dicing tape 10 may be in a sheet-like or tape-like form formed by cutting the dicing tape 10 in a predetermined size.

<Dicing die bond film>
The dicing tape 10 of the present embodiment is in the form of a dicing die-bonding film 20 in which a die-bonding film (adhesive layer) 3 is releasably adhered and laminated on an adhesive layer 2 of the dicing tape 10 in a semiconductor manufacturing process. can also be used. The die-bonding film (adhesive layer) 3 is for bonding/connecting the semiconductor chips, which are split and separated by cool expansion, to lead frames and wiring substrates (supporting substrates). Moreover, when semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips. In this case, the semiconductor chip in the first stage is adhered to the semiconductor chip mounting wiring board on which terminals are formed by a die bond film (adhesive layer) 3, and a die bond film (adhesive layer) is further applied on the semiconductor chip in the first stage. ) 3, the second stage semiconductor chip is bonded. The connection terminals of the semiconductor chip in the first stage and the semiconductor chip in the second stage are electrically connected to external connection terminals via wires. It is embedded in the film (adhesive layer) 3, that is, the wire-embedded die-bonding film (adhesive layer) 3 described above. An example of the die-bonding film (adhesive layer) 3 when the dicing tape 10 of the present embodiment is used as the dicing die-bonding film 20 is shown below, but the present invention is not particularly limited to this example.

(die bond film)
The die-bonding film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. A preferred embodiment of the adhesive composition includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin. A thermosetting adhesive composition obtained by adding a curing accelerator, an inorganic filler, a silane coupling agent, etc. to a resin composition containing. The die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesiveness between the semiconductor chip/support substrate and between the semiconductor chip/semiconductor chip, and also has excellent electrode-embedding properties and/or wire-embedding properties. It is preferable because it can be imparted with properties, can be bonded at a low temperature in the die bonding process, can be cured in a short time, and has excellent reliability after being molded with a sealing agent.

A general-purpose die-bonding film in which a wire is not embedded in an adhesive layer and a wire-embedded die-bonding film in which a wire is embedded in an adhesive layer differ from the materials constituting the adhesive composition. The types are mostly the same, but by changing the blending ratio of the materials used and the physical properties and characteristics of each material according to each purpose, it is possible to create general-purpose die-bonding films or wire-embedded die-bonding. Customized for film. Also, when there is no problem in the reliability of the final semiconductor device, the wire-embedded die-bonding film may be used as a general-purpose die-bonding film. That is, the wire-embedded die-bonding film is not limited to wire-embedded applications, but can also be used for bonding semiconductor chips to metal substrates such as lead frames and substrates having irregularities caused by wiring and the like.

(Adhesive composition for general-purpose die-bonding film)
First, an example of the adhesive composition for general-purpose die-bonding films will be described, but the composition is not particularly limited to this example. As an index of fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, shear viscosity characteristics at 80°C can be mentioned. indicates a value in the range of 20,000 Pa·s to 40,000 Pa·s, preferably in the range of 25,000 Pa·s to 35,000 Pa·s. One example of a preferred embodiment of the adhesive composition for general-purpose die-bonding films is a total of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components of the adhesive composition. When the amount is 100 parts by mass as a reference, (a) the glycidyl group-containing (meth)acrylic acid ester copolymer in the range of 52 parts by mass to 90 parts by mass, and the epoxy resin in the range of 5 parts by mass to 25 parts by mass The following range, in the range of 5 parts by mass or more and 23 parts by mass or less of the phenol resin, is adjusted so that the total amount of the resin component is 100 parts by mass, and (b) the epoxy resin and the phenol resin are included as a curing accelerator. 0.1 parts by mass or more and 0.3 parts by mass or less with respect to the total amount of 100 parts by mass, and (c) the inorganic filler containing the glycidyl group-containing (meth) acrylic acid ester copolymer and the epoxy resin and the phenol resin in an amount of 5 parts by mass or more and 20 parts by mass or less per 100 parts by mass of the total amount of the phenol resin.

[Glycidyl Group-Containing (Meth)Acrylic Acid Ester Copolymer]
The glycidyl group-containing (meth)acrylic acid ester copolymer contains, as a copolymer unit, at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate. is preferred. The copolymer unit of glycidyl (meth)acrylate is 0.5% by mass or more and 6.0% by mass in the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer from the viewpoint of ensuring appropriate adhesive strength. It is preferably contained in the following range, more preferably in the range of 2.0% by mass or more and 4.0% by mass or less. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may optionally contain other monomers such as styrene and acrylonitrile as copolymer units from the viewpoint of adjusting the glass transition temperature (Tg). You can

The glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50 ° C. or higher and 30 ° C. or lower, and improves handling property as a die bond film (tackiness from the viewpoint of suppression), it is more preferably in the range of -10°C or higher and 30°C or lower. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, ethyl (meth)acrylate and / or it is preferred to use butyl (meth)acrylate.

The weight average molecular weight Mw of the glycidyl group-containing (meth)acrylate copolymer is preferably in the range of 500,000 to 2,000,000, more preferably in the range of 700,000 to 1,000,000. When the weight-average molecular weight Mw is within the above range, the adhesive strength, heat resistance, and flowability are likely to be appropriate. Here, the weight average molecular weight Mw means a standard polystyrene conversion value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer in the die-bonding film (adhesive layer) 3 is When the total amount of coalescing and the epoxy resin and phenol resin described later is set to 100 parts by mass as a reference, it is preferably in the range of 52% by mass or more and 90% by mass or less, and in the range of 60% by mass or more and 80% by mass or less. It is more preferable to have

[Epoxy resin]
Examples of epoxy resins include, but are not limited to, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol novolak type epoxy resins, and alkylphenols. novolak-type epoxy resin, cresol novolac-type epoxy resin, bisphenol A novolac-type epoxy resin, diglycidyl-etherified biphenol, diglycidyl-etherified naphthalene diol, diglycidyl -etherified phenol, diglycidyl -etherified alcohol, and Bifunctional epoxy resins such as alkyl-substituted products, halides and hydrogenated products thereof, and novolac type epoxy resins are included. Other commonly known epoxy resins may also be used, such as polyfunctional epoxy resins and heterocyclic-containing epoxy resins. These may be used alone or in combination of two or more.

The softening point of the epoxy resin is preferably in the range of 70° C. or higher and 130° C. or lower from the viewpoint of adhesive strength and heat resistance. Moreover, the epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described later.

The content of the epoxy resin in the die-bonding film (adhesive layer) 3 is, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3, the content of the epoxy resin in the adhesive composition. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component, the epoxy resin, and the phenol resin described later is set to 100 parts by mass, the range is 5% by mass or more and 25% by mass or less. and more preferably in the range of 10% by mass or more and 20% by mass or less.

[Phenolic resin: Curing agent for epoxy resin]
Curing agents for epoxy resins are not particularly limited, but include, for example, phenolic resins that can be obtained by reacting a phenolic compound and a xylylene compound, which is a divalent linking group, in the absence of a catalyst or in the presence of an acid catalyst. . Examples of the phenolic resin include novolac type phenolic resin, resol type phenolic resin, and polyoxystyrene such as polyparaoxystyrene. Examples of novolac-type phenolic resins include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. These phenol resins may be used alone or in combination of two or more. Among these phenolic resins, phenolic novolac resins and phenolic aralkyl resins tend to improve the connection reliability of the die-bonding film (adhesive layer) 3, and are preferably used.

The softening point of the phenol resin is preferably in the range of 70° C. or higher and 90° C. or lower from the viewpoint of adhesive strength and heat resistance. Moreover, the hydroxyl group equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenolic resin in the thermosetting resin composition, the phenolic resin should be It is preferable to add hydroxyl groups in an amount that is preferably 0.5 equivalents or more and 2.0 equivalents or less, more preferably 0.8 equivalents or more and 1.2 equivalents or less. Since it depends on the functional group equivalent of each resin, it cannot be generalized. When the total amount of the epoxy resin and the phenol resin is 100 parts by mass as a reference, it is preferably in the range of 5% by mass or more and 23% by mass or less.

[Curing accelerator]
Moreover, a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts can be added to the thermosetting resin composition, if necessary. Specific examples of such curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitium tate and the like, and these may be used alone or in combination of two or more. The amount of the curing accelerator added is preferably in the range of 0.1 parts by mass or more and 0.3 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin.

[Inorganic filler]
Furthermore, from the viewpoint of controlling the fluidity of the die-bonding film (adhesive layer) 3 and improving the elastic modulus, an inorganic filler can be added to the thermosetting resin composition as necessary. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystals crystalline silica, amorphous silica, etc., and these may be used singly or in combination of two or more. Among these, crystalline silica, amorphous silica and the like are preferably used from the viewpoint of versatility. Specifically, for example, Aerosil (registered trademark: ultrafine dry silica) having a nano-sized average particle size is preferably used. The content of the inorganic filler in the die bond film (adhesive layer) 3 is 100 based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenol resin that are the resin components described above. When expressed as parts by mass, it is preferably in the range of 5% by mass or more and 20% by mass or less.

[Silane coupling agent]
Furthermore, a silane coupling agent can be added to the thermosetting resin composition, if necessary, from the viewpoint of improving the adhesive strength to the adherend. Silane coupling agents include, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane, which are can be used alone or in combination of two or more. The amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass or more and 7.0 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin.

[others]
Furthermore, a flame retardant, an ion trapping agent, or the like may be added to the thermosetting resin composition as long as the function as a die-bonding film is not impaired. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, hydrous antimony oxide, zirconium phosphate having a specific structure, magnesium silicate, aluminum silicate, triazole compounds, tetrazole compounds, and bipyridyl compounds. mentioned.

(Adhesive composition for wire-embedded die-bonding film)
Next, an example of the adhesive composition for a wire-embedded die-bonding film will be described, but the composition is not particularly limited to this example. As an index of fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, shear viscosity characteristics at 80°C can be mentioned. The shear viscosity is in the range of 200 Pa·s to 11,000 Pa·s, preferably 2,000 Pa·s to 7,000 Pa·s. As an example of a preferred embodiment of the adhesive composition for the wire-embedded die-bonding film, the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component of the adhesive composition, the epoxy resin, and the phenol resin When the total amount is 100 parts by mass as a reference, (a) the glycidyl group-containing (meth)acrylic acid ester copolymer in the range of 17 parts by mass or more and 51 parts by mass or less, and the epoxy resin in the range of 30 parts by mass or more and 64 parts by mass In the range of 19 parts by mass or more and 53 parts by mass or less, the phenol resin is adjusted so that the total amount of the resin component is 100 parts by mass, and (b) a curing accelerator is added to the epoxy resin and the above 0.01 parts by mass or more and 0.07 parts by mass or less with respect to the total amount of 100 parts by mass with the phenol resin, and (c) the inorganic filler containing the glycidyl group-containing (meth) acrylic acid ester copolymer and the above An adhesive composition containing 10 parts by mass or more and 80 parts by mass or less with respect to 100 parts by mass of the total amount of the epoxy resin and the phenol resin is mentioned.

[Glycidyl Group-Containing (Meth)Acrylic Acid Ester Copolymer]
The glycidyl group-containing (meth)acrylic acid ester copolymer contains, as a copolymer unit, at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate. is preferred. In the case of a wire-embedded die-bonding film, it is necessary to achieve both improved fluidity during die-bonding and securing of adhesive strength after curing. A group-containing (meth)acrylate copolymer (A) and a glycidyl group-containing (meth)acrylate copolymer (B) having a low copolymer unit ratio of glycidyl (meth)acrylate and a high molecular weight are preferably used in combination, and it is preferable that the former component (A) is contained in a certain amount or more.

That is, the glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for a wire-embedded die-bonding film is specifically described as "a copolymer unit of glycidyl (meth)acrylate is a glycidyl group-containing In the total amount of (meth) acrylic acid ester copolymer, it is contained in the range of 5.0% by mass or more and 15.0% by mass or less, the glass transition temperature (Tg) is in the range of -50 ° C. or more and 30 ° C. or less, and the weight A glycidyl group-containing (meth)acrylic acid ester copolymer (A) having an average molecular weight Mw in the range of 100,000 or more and 400,000 or less, and a "glycidyl group-containing (meth)acrylic acid copolymer unit containing a glycidyl group ( In the total amount of meth) acrylic acid ester copolymer, it is contained in the range of 1.0% by mass or more and 7.0% by mass or less, and the glass transition temperature (Tg) is in the range of -50 ° C. or more and 30 ° C. or less, weight average A glycidyl group-containing (meth)acrylic acid ester copolymer (B) having a molecular weight Mw in the range of 500,000 or more and 900,000 or less". Here, the weight average molecular weight Mw means a standard polystyrene conversion value measured by gel permeation chromatography.

The content of the glycidyl group-containing (meth)acrylic acid ester copolymer (A) is 60% by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)). It is preferably in the range of 90% by mass or more. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may optionally contain other monomers such as styrene and acrylonitrile as copolymer units from the viewpoint of adjusting the glass transition temperature (Tg). You can

The glass transition temperature (Tg) of the entire glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50 ° C. or higher and 30 ° C. or lower. from the point of view of suppression of the temperature, it is more preferably in the range of −10° C. or higher and 30° C. or lower. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms is ethyl (meth)acrylate. and/or butyl (meth)acrylate is preferably used.

The content ratio of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)) in the wire-embedded die-bonding film (adhesive layer) 3 is determined by the fluidity during die bonding and From the viewpoint of adhesive strength after curing, 100 parts by mass based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition, and the epoxy resin and phenol resin described later. , the content is preferably in the range of 17% by mass or more and 51% by mass or less, and more preferably in the range of 20% by mass or more and 45% by mass or less.

[Epoxy resin]
The epoxy resin is not particularly limited, but the same epoxy resins as those exemplified above for the adhesive composition for general-purpose die-bonding films can be used. These may be used alone or in combination of two or more. In the case of a wire-embedded die-bonding film, the bonding strength is ensured, and the generation of voids on the bonding surface is suppressed, and the wire is kept in good condition. In order to control the fluidity and elastic modulus, it is preferable to use two or more types of epoxy resins in combination.

Preferred embodiments of the epoxy resin used for the wire-embedded die-bonding film (adhesive layer) 3 include an epoxy resin (C) that is liquid at room temperature and an epoxy resin (D ). The content of the epoxy resin (C), which is liquid at room temperature, is preferably in the range of 15% by mass or more and 75% by mass or less in the total amount of the epoxy resin (total of (C) and (D)). More preferably, it is in the range of not less than 50% by mass and not more than 50% by mass. The epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described later.

The content of the epoxy resin in the die-bonding film (adhesive layer) 3 is, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3, the content of the epoxy resin in the adhesive composition. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component, the epoxy resin, and the phenol resin described later is set to 100 parts by mass, the range is 30% by mass or more and 64% by mass or less. and more preferably in the range of 35% by mass or more and 50% by mass or less.

[Phenolic resin: Curing agent for epoxy resin]
The curing agent for the epoxy resin is not particularly limited, but the same phenolic resins as those exemplified above for the adhesive composition for general-purpose die-bonding films can be used in the same manner. The softening point of the phenol resin is preferably in the range of 70° C. or higher and 115° C. or lower from the viewpoint of adhesive strength and fluidity. Moreover, the hydroxyl group equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenolic resin in the thermosetting resin composition, the phenolic resin should be The amount of hydroxyl groups is preferably 0.5 equivalents or more and 2.0 equivalents or less, more preferably 0.6 equivalents or more and 1.0 equivalents or less from the viewpoint of compatibility with fluidity during die bonding. is preferred. Since it depends on the functional group equivalent of each resin, it cannot be generalized. When the total amount of the epoxy resin and the phenol resin is 100 parts by mass as a reference, it is preferably in the range of 19% by mass or more and 53% by mass or less.

[Curing accelerator]
Moreover, a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts can be added to the thermosetting resin composition, if necessary. As such a curing accelerator, the same curing accelerator as exemplified as the curing accelerator for the adhesive composition for general-purpose die-bonding films can be used in the same manner. The amount of the curing accelerator added is 0.01 parts by mass or more and 0.07 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. A range is preferred.

[Inorganic filler]
Furthermore, the above thermosetting resin composition is used from the viewpoint of improving the handleability of the die bond film (adhesive layer) 3, adjusting the fluidity during die bonding, imparting thixotropic properties, improving the adhesive strength, etc. , an inorganic filler can be added as necessary. As the inorganic filler, the same inorganic fillers as those exemplified as the above-described adhesive composition for general-purpose die-bonding films can be used in the same manner. It is preferably used. The content of the inorganic filler in the die-bonding film (adhesive layer) 3 is, from the viewpoint of fluidity during die-bonding, fractureability during cool expansion, and adhesive strength, glycidyl group-containing (meta), which is the resin component described above. When the total amount of the acrylic acid ester copolymer, the epoxy resin and the phenol resin is 100 parts by mass as a reference, the range is preferably 10% by mass or more and 80% by mass or less, and 15% by mass or more and 50% by mass or less. is more preferred.

The above inorganic filler is a mixture of two or more inorganic fillers with different average particle sizes for the purpose of improving the splitting property of the die-bonding film (adhesive layer) 3 during cool expansion and sufficiently expressing the adhesive strength after curing. preferably. Specifically, it is preferable to use an inorganic filler having an average particle size of 0.1 μm or more and 5 μm or less as the main inorganic filler component accounting for 80% by mass or more of the total mass of the inorganic filler. If it is necessary to suppress foaming of the adhesive layer 3 in the semiconductor chip manufacturing process due to excessively high fluidity of the die bond film (adhesive layer) 3 or to improve the adhesive strength after curing, the average particle size An inorganic filler having a particle size of less than 0.1 μm may be used in combination with the main inorganic filler component in an amount of 20% by mass or less based on the total mass of the inorganic filler.

[Silane coupling agent]
Furthermore, a silane coupling agent can be added to the thermosetting resin composition, if necessary, from the viewpoint of improving the adhesive strength to the adherend. As the silane coupling agent, the same silane coupling agents as exemplified for the adhesive composition for general-purpose die-bonding films can be used in the same manner. The amount of the silane coupling agent added is 0.5 parts by mass or more and 2.0 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the bonding surface. is preferably in the range of

[others]
Furthermore, a flame retardant, an ion trapping agent, or the like may be added to the thermosetting resin composition within a range that does not impair the function of the die-bonding film 3 . As these flame retardants and ion trapping agents, the same flame retardants and ion trapping agents as those exemplified above for the adhesive composition for general-purpose die-bonding films can be used in the same manner.

(Thickness of die bond film (adhesive layer))
The thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but it is necessary to ensure adhesive strength, to properly embed wires for connecting semiconductor chips, or to sufficiently fill the unevenness of the wiring circuit of the substrate. , 5 μm or more and 200 μm or less. If the thickness of the die-bonding film (adhesive layer) 3 is less than 5 μm, the adhesion between the semiconductor chip and the lead frame, wiring substrate, or the like may be insufficient. On the other hand, when the thickness of the die-bonding film (adhesive layer) 3 exceeds 200 μm, it is not economical, and it tends to be insufficient to cope with miniaturization and thinning of semiconductor devices. The thickness of the film-like adhesive is more preferably in the range of 10 μm to 100 μm, particularly preferably in the range of 20 μm to 75 μm, in terms of high adhesiveness and thinning of the semiconductor device.

More specifically, the thickness when used as a general-purpose die-bonding film (adhesive layer) is, for example, preferably in the range of 5 μm or more and less than 30 μm, particularly preferably in the range of 10 μm or more and 25 μm or less. When used as an agent layer), the thickness is, for example, preferably in the range of 30 μm to 100 μm, particularly preferably in the range of 40 μm to 80 μm.

(Manufacturing method of die-bonding film)
The die-bonding film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare a release liner. As the release liner, the same release liner as the release liner placed on the adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die-bonding film (adhesive layer) 3, which is a material for forming the die-bonding film (adhesive layer) 3, is prepared. The coating solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, and a curing accelerator, which are constituent components of the die-bonding film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing an agent, silane coupling, etc., and a dilution solvent. As the solvent, for example, general-purpose organic solvents such as methyl ethyl ketone and cyclohexanone can be used.

Next, a coating solution for the die-bonding film (adhesive layer) 3 is applied onto the release-treated surface of the release liner, which serves as a temporary support, and dried to form a die-bonding film (adhesive layer) having a predetermined thickness. )3. After that, the release-treated surface of another release liner is attached onto the die bond film (adhesive layer) 3 . The coating method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, etc. can be used. As for the drying conditions, for example, the drying temperature is preferably in the range of 60° C. or higher and 200° C. or lower, and the drying time is preferably in the range of 1 minute or longer and 90 minutes or shorter. In the present invention, a laminate having a release liner on both sides or one side of the die-bonding film (adhesive layer) 3 may also be referred to as the die-bonding film (adhesive layer) 3 .

The low angle adhesive strength after ultraviolet irradiation of the adhesive layer 2 of the dicing tape 10 with respect to the die bond film 3 at 23 ° C. is preferably 0.95 N / 25 mm or less, more preferably 0.85 N / It is 25 mm or less, more preferably 0.70 N/25 mm or less. From the viewpoint of improving pick-up performance, the lower the low-angle adhesive strength after ultraviolet irradiation, the better. It is preferably 0.05 N/25 mm or more from the viewpoint that the attached semiconductor chip 30a can be prevented from being peeled off or shifted from the dicing tape 10, and picking up can be performed more satisfactorily. In addition, the shear adhesive strength before ultraviolet irradiation of the adhesive layer 2 of the dicing tape 10 to the die bond film 3 at -30 ° C. From the viewpoint of both suppression of (floating) and improvement of pick-up property, it is preferably 100.0 N/100 mm ² or more, more preferably 105.0 N/100 mm ² or more and 140 N/100 mm ^{2 or} less, still more preferably 107.7 N/ It is in the range of 100 mm ² or more and 123.0 N/100 mm ² or less.

In addition, the low angle adhesive strength after ultraviolet irradiation at 23 ° C. and the shear adhesive strength before ultraviolet irradiation at -30 ° C. of the adhesive layer 2 of the dicing tape 10 with respect to the die bond film 3 are each measured by the test method described in the example. can be measured using In addition, in the pre-ultraviolet irradiation shear adhesive strength measurement test, the failure mode may be cohesive failure of the adhesive layer as long as it does not interfere with pick-up properties.

(Manufacturing method of dicing die-bonding film)
Although the method for producing the dicing die-bonding film 20 is not particularly limited, it can be produced by a conventionally known method. For example, the dicing die-bonding film 20 is obtained by first preparing the dicing tape 10 and the die-bonding film 20 individually, and then peeling off the release liners of the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 of the dicing tape 10. Then, the pressure-sensitive adhesive layer 2 of the dicing tape 10 and the die bond film (adhesive layer) 3 may be bonded together by pressing with a pressing roll such as a hot roll laminator. The bonding temperature is not particularly limited, and is preferably in the range of, for example, 10° C. to 100° C., and the bonding pressure (linear pressure) is, for example, in the range of 0.1 kgf/cm to 100 kgf/cm. Preferably. In the present invention, the dicing die-bonding film 20 may also be referred to as the dicing die-bonding film 20 in some cases as a laminate in which a release liner is provided on the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 . In the dicing die-bonding film 20, the release liner provided on the adhesive layer 2 and the die-bonding film (adhesive layer) 3 may be peeled off when the dicing die-bonding film 20 is provided to a work.

The dicing die-bonding film 20 may be in the form of being wound in a roll or in the form of laminating wide sheets. Alternatively, the dicing tape 10 may be in a sheet-like or tape-like form formed by cutting the dicing tape 10 in a predetermined size.

For example, as disclosed in JP-A-2011-159929, an adhesive layer (die bond film 3) and an adhesive film (dicing It can also be produced in the form of a film roll in which a large number of tapes 10) are formed in the shape of islands. In this case, the dicing tape 10 is formed in a circular shape with a larger diameter than the die-bonding film (adhesive layer) 3, and the die-bonding film (adhesive layer) 3 is formed in a circular shape with a larger diameter than the semiconductor wafer 30. . In order to continuously and satisfactorily peel and remove excess dicing tape 10 without cutting it when pre-cutting is performed in such a film roll form, the dicing tape 10 is locally heated and/or cooled. may be Here, the heating temperature is appropriately selected, but is preferably from 30.degree. C. to 120.degree. The heating time is appropriately selected, but is preferably 0.1 to 10 seconds. Since the dicing tape 10 of the present invention has a certain degree of heat resistance, even if it is subjected to heat treatment at a high temperature of 120° C., it poses no particular problem in handling.

<Method for manufacturing semiconductor chip>
FIG. 5 is a flow chart illustrating a method for manufacturing a semiconductor chip using a dicing die-bonding film 20 in which a die-bonding film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. . In FIG. 6, a ring frame (wafer ring) 40 is formed on the outer edge of the dicing tape 10 of the dicing die-bonding film 20 (the adhesive layer 2 exposed portion), and individual pieces are placed on the die-bonding film (adhesive layer) 3 at the center. FIG. 3 is a schematic diagram showing a state in which semiconductor wafers processed to be curable are attached; Further, FIGS. 7A to 7F show an example of a grinding process of a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation and a bonding process of the semiconductor wafer to a dicing die-bonding film. It is a sectional view. 8A to 8F are cross-sectional views showing an example of manufacturing a semiconductor chip using a thin film semiconductor wafer having a plurality of modified regions bonded with a dicing die-bonding film.

(Manufacturing method of semiconductor chip using dicing die bond film 20>
A method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and any one of the methods described above may be used. Here, a manufacturing method by SDBG (Stealth Dicing Before Griding) is taken as an example. I will list and explain.

First, as shown in FIG. 7A, a semiconductor wafer W having a plurality of integrated circuits (not shown) mounted on a first surface Wa of a semiconductor wafer W mainly composed of silicon is prepared (see FIG. 5). step S201: preparation step). A wafer processing tape (back grind tape) T having an adhesive surface Ta is attached to the first surface Wa side of the semiconductor wafer W. As shown in FIG.

Next, as shown in FIG. 7B, in a state where the semiconductor wafer W is held by the wafer processing tape T, the laser light focused inside the wafer is directed to the opposite side of the wafer processing tape T. That is, the semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer along the grid-like dividing lines X, and the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. is formed (step S202 in FIG. 5: modified region forming step). The modified region 30b is a weakened region for breaking and separating the semiconductor wafer W into semiconductor chip units by a cool expansion process. A method of forming the modified region 30b along the dividing line by irradiating the semiconductor wafer W with laser light is described in, for example, Japanese Patent No. 3408805, Japanese Patent Application Laid-Open No. 2002-192370, and Japanese Patent Application Laid-Open No. 2003-338567. Reference can be made to the disclosed method.

Next, as shown in FIG. 7(c), while the semiconductor wafer W is held by the wafer processing tape T, the semiconductor wafer W is ground from the second surface Wb to a predetermined thickness. It is thinned. Here, the thickness of the semiconductor wafer 30 is adjusted to preferably 100 μm or less, more preferably 10 μm or more and 50 μm or less, from the viewpoint of thinning the semiconductor device. As a result, the thin film semiconductor wafer 30 having therein the modified region 30b that facilitates singulation into a plurality of semiconductor chips 30a by cool expansion in the post-process is obtained (step S203 in FIG. 5: grinding and thinning process). In this grinding and thinning process, the grinding load of the grinding wheel varies depending on the final thickness of the semiconductor wafer 30 after grinding, the number of scanning times of laser light irradiation (input power), the physical properties of the wafer processing tape T, and the like. When the semiconductor wafer 30 is added, a crack grows in the vertical direction starting from the modified region 30b, and the semiconductor wafer 30 is already broken into individual semiconductor chips 30a at this stage. may not be.

Next, as shown in FIGS. 7(d) and 7(e), a thin film semiconductor wafer 30 (the semiconductor wafer 30 is already a semiconductor chip 30a) having therein a plurality of modified regions 30b held by a wafer processing tape T. When the semiconductor chips 30a) are cut into two pieces, the plurality of semiconductor chips 30a) are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (step S204 in FIG. 5: bonding step). In this step, after peeling off the release liner from the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 of the dicing die-bonding film 20 cut into a circle, as shown in FIG. A ring frame (wafer ring) 40 is attached to the outer edge (adhesive layer 2 exposed part) of the dicing tape 10, and the die bond film (adhesive layer) 3 laminated on the upper center part of the adhesive layer 2 of the dicing tape 10 A thin-film semiconductor wafer 30 (a plurality of semiconductor chips 30a when the semiconductor wafer 30 has already been cut into semiconductor chips 30a) that has been processed so as to be singulated is attached. Thereafter, as shown in FIG. 7(f), the wafer processing tape T is peeled off from the thin film semiconductor wafer 30 (a plurality of semiconductor chips 30a if the semiconductor wafer 30 has already been cut into semiconductor chips 30a). The sticking is performed while pressing with a pressing means such as a pressing roll. The bonding temperature is not particularly limited, and for example, it is preferably in the range of 20° C. or higher and 130° C. or lower. is more preferred. The bonding pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. Since the dicing tape 10 of the present invention has a certain degree of heat resistance, there is no particular problem in handling it even if the bonding temperature is high.

Subsequently, after the ring frame 40 is attached on the adhesive layer 2 of the dicing tape 10 in the dicing die-bonding film 20, as shown in FIG. The dicing die bond film 20 with 30 (a plurality of semiconductor chips 30a if the semiconductor wafer 30 has already been cleaved into semiconductor chips 30a) is fixed to a holder 41 of an expanding device. As shown in FIG. 8B, a thin film semiconductor wafer 30 has a plurality of modified regions 30b formed therein along dicing lines X so as to be singulated into a plurality of semiconductor chips 30a. It is

Next, a first expansion step under conditions of relatively low temperature (for example, −30° C. or higher and 0° C. or lower), that is, a cool expansion step is performed as shown in FIG. is separated into a plurality of semiconductor chips 30a, and the die-bonding film (adhesive layer) 3 of the dicing die-bonding film 20 is cut into small pieces of the die-bonding film (adhesive layer) 3a corresponding to the size of the semiconductor chips 30a. Thus, a semiconductor chip 30a with a die-bonding film 3a is obtained (step S205 in FIG. 5: cool expansion step). In this step, a hollow columnar push-up member (not shown) provided in the expanding device is lifted in contact with the dicing tape 10 under the dicing die-bonding film 20, and the semiconductor wafer 30 processed so as to be singulated is obtained. The dicing tape 10 of the bonded dicing die bond film 20 is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30 . The internal stress generated by the omnidirectional tension of the dicing tape 10 due to the cool expansion is transferred as external stress to the semiconductor wafer 30 processed so as to be singulated and the die bond film 3 attached to the semiconductor wafer 30. . Due to this external stress, cracks grow in the vertical direction starting from a plurality of grid-shaped modified regions 30b formed inside the semiconductor wafer 30, and the semiconductor wafer 30 is cleaved into individual semiconductor chips 30a. The embrittled die-bonding film 3 is also cut into small pieces of the die-bonding film 3a having the same size as the semiconductor chip 30a. In addition, when the semiconductor wafer 30 has already been cut into individual semiconductor chips 30a in the grinding and thinning process, only the die bond film 3 that is in close contact with the semiconductor chips 30a and is brittle at a low temperature is exposed to the semiconductor by cool expansion. The semiconductor chip 30a with the die-bonding film 3a is obtained by cutting the die-bonding film 3a into small pieces corresponding to the size of the chip 30a.

The temperature conditions in the cool expansion step are, for example, -30°C or higher and 0°C or lower, preferably -20°C or higher and -5°C or lower, more preferably -15°C or higher and -5°C.
°C or less, particularly preferably -15°C. The expansion speed (the speed at which the hollow columnar push-up member rises) in the cool expansion step is preferably in the range of 0.1 mm/second or more and 1000 mm/second or less, more preferably 10 mm/second or more and 300 mm/second or less. Range. In addition, the expansion amount (push-up height of the hollow columnar push-up member) in the cool expansion step is preferably in the range of 3 mm or more and 16 mm or less.

Here, in the dicing tape 10 of the present invention, first, the base film 1 is composed of a resin composition mainly composed of an ionomer of an ethylene/unsaturated carboxylic acid copolymer containing a specific amount of polyamide resin. Therefore, the internal stress generated by the dicing tape 10 being stretched in all directions by the cool expansion is processed so that it can be singulated. The external stress is efficiently transmitted to the semiconductor wafer 30 and the die-bonding film 3 attached to the semiconductor wafer 30, and as a result, the semiconductor wafer 30 and the die-bonding film 3 are simultaneously cleaved at a high yield. Furthermore, in the dicing tape 10 of the present invention, the adhesive layer 2 is composed of an adhesive composition mainly composed of an acrylic adhesive polymer having a specific glass transition temperature (Tg) and a hydroxyl value, and a polyisocyanate-based By controlling the amount of the cross-linking agent added, the toughness and residual hydroxyl group concentration of the pressure-sensitive adhesive composition after the cross-linking reaction can be set within appropriate ranges. Appropriate impact mitigation and initial adhesive strength are imparted, and as a result, the impact force when the semiconductor wafer 30 and the die bond film 3 processed to be individualized by cool expansion is cut is mitigated by the adhesive layer 2. As a result, the small pieces of the die-bonding film 3a (adhesive layer) holding the semiconductor chip 30a are prevented from floating and peeling from the adhesive layer 2 on the four edges.

After the cool-expanding step, the hollow cylindrical push-up member of the expanding device is lowered to release the expanded state of the dicing tape 10 .

Then, a second expanding step under conditions of relatively high temperature (for example, 10° C. or higher and 30° C. or lower), that is, a room temperature expansion step is performed as shown in FIG. The distance (kerf width) between the semiconductor chips 30a with the agent layer) 3a is widened. In this step, a columnar table (not shown) provided in the expanding device is raised while being in contact with the dicing tape 10 under the dicing die-bonding film 20, and the dicing tape 10 of the dicing die-bonding film 20 is expanded (see FIG. 5 step S206: normal temperature expansion step). By ensuring a sufficient distance (kerf width) between the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a by means of the normal temperature expansion process, the recognition of the semiconductor chips 30a by a CCD camera or the like is enhanced, and the adjacent semiconductor chips 30a can be easily picked up. It is possible to prevent re-bonding of the semiconductor chips 30a with the die bond film (adhesive layer) 3a caused by contact between the semiconductor chips 30a. As a result, in the later-described pick-up process, the pick-up property of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved.

The temperature condition in the normal temperature expansion step is, for example, 10°C or higher, preferably 15°C or higher and 30°C or lower. The expansion speed (the speed at which the cylindrical table rises) in the normal temperature expansion step is, for example, in the range of 0.1 mm/sec to 50 mm/sec, preferably in the range of 0.3 mm/sec to 30 mm/sec. . Further, the expansion amount in the normal temperature expansion step is, for example, in the range of 3 mm or more and 20 mm or less.

After the dicing tape 10 is expanded at room temperature by raising the table, the table vacuum-adsorbs the dicing tape 10 . Then, the table is lowered together with the workpiece while maintaining the adsorption by the table, and the expanded state of the dicing tape 10 is released. In order to suppress the narrowing of the kerf width of the semiconductor chip 30a with the die bond film (adhesive layer) 3a on the dicing tape 10 after the expanded state is canceled, the dicing tape 10 is vacuum-adsorbed to the table. It is preferable that the circumferential portion outside the holding area of the semiconductor chip 30a is heat-shrinked by blowing hot air to eliminate the slack of the dicing tape 10 caused by the expansion, thereby maintaining the tension. After the heat shrinkage, the vacuum suction state by the table is released. The temperature of the hot air may be adjusted according to the physical properties of the substrate film 1, the distance between the hot air outlet and the dicing tape, the air flow rate, etc., but is preferably in the range of 200° C. or higher and 250° C. or lower. Also, the distance between the hot air outlet and the dicing tape is preferably in the range of, for example, 15 mm or more and 25 mm or less. Also, the air volume is preferably in the range of, for example, 35 L/min or more and 45 L/min or less. In addition, when performing the heat shrinking process, while rotating the stage of the expanding device at a rotational speed in the range of, for example, 3°/sec or more and 10°/sec or less, the circumference of the dicing tape 10 outside the semiconductor chip 30a holding area Hot air is blown along the part.

The dicing tape 10 of the present invention uses, as its base film 1, a resin film composed of a resin composition mainly composed of an ionomer of an ethylene/unsaturated carboxylic acid copolymer containing a specific amount of a polyamide resin. Therefore, it has a certain degree of heat resistance. Therefore, even if high-temperature hot air is blown in the heat shrink process, heat wrinkles or the like do not occur, and the circumferential portion of the dicing tape 10 can be thermally shrunk without problems.

Subsequently, by irradiating the dicing tape 10 with active energy rays from the base film 1 side, the adhesive layer 2 is cured and shrunk, and the adhesive strength of the adhesive layer 2 to the die bond film 3a is reduced ( Step S207 in FIG. 5: active energy ray irradiation step). Here, the active energy rays used for the post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β rays, γ rays, and the like. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferred, and ultraviolet rays (UV) are particularly preferred. The light source for irradiating the ultraviolet rays (UV) is not particularly limited, but for example, black light, ultraviolet fluorescent lamp, low pressure mercury lamp, medium pressure mercury lamp, high pressure mercury lamp, ultra high pressure mercury lamp, carbon arc lamp, metal halide lamp, xenon. A lamp or the like can be used. ArF excimer laser, KrF excimer laser, excimer lamp, synchrotron radiation, or the like can also be used. The amount of ultraviolet (UV) irradiation light is not particularly limited, and is preferably in the range of 100 mJ/cm ² or more and 2,000 J/cm ² or less, and in the range of 300 mJ/cm ² or more and 1,000 J/cm ² or less. is more preferable.

Here, as described above, the dicing tape 10 of the present invention improves the adhesion of the pressure-sensitive adhesive layer 2 to the die-bonding film (adhesive layer) 3 at low temperatures. 2, the active energy ray-reactive carbon-carbon double bond concentration is in the range of 0.85 mmol to 1.60 mmol per 1 g of the active energy ray-curable adhesive composition. Therefore, the pressure-sensitive adhesive layer 2 after ultraviolet (UV) irradiation has an increased crosslink density due to a three-dimensional crosslink reaction of carbon-carbon double bonds, that is, a large increase in storage elastic modulus and a glass transition. Since the temperature rises and the volume shrinkage also increases, the adhesive force to the die-bonding film 3a can be sufficiently lowered. As a result, the pick-up property of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved in the pick-up process described later.

Subsequently, the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a, which has been cut and separated by the above-described expanding process, is peeled off from the adhesive layer 2 after the ultraviolet (UV) irradiation of the dicing tape 10. Picking up is performed (Step S208 in FIG. 5: peeling (picking up) step).

As the pick-up method, for example, as shown in FIG. 60, and as shown in FIG. 8(f), the pushed-up semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is sucked by the suction collet 50 of the pick-up device (not shown) to form the dicing tape 10. The method of peeling off from the adhesive layer 2, etc. are mentioned. As a result, a semiconductor chip 30a with a die-bonding film (adhesive layer) 3a is obtained.

The pick-up condition is not particularly limited as long as it is practically permissible, and usually, the push-up speed of the push-up pin (needle) 60 is set within a range of 1 mm/second or more and 100 mm/second or less. Although there are many, when the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm or less, from the viewpoint of suppressing damage to the thin semiconductor chip 30a, it is set within the range of 1 mm/sec to 20 mm/sec. preferably. From the viewpoint of productivity, it is more preferable to be able to set within the range of 5 mm/sec to 20 mm/sec.

Further, the thrust height of the thrust pin that enables pickup without damaging the semiconductor chip 30a is preferably set within the range of 100 μm or more and 600 μm or less, for example, from the same viewpoint as described above. From the viewpoint of reduction, it is more preferable that the thickness can be set within the range of 100 μm or more and 450 μm or less. From the viewpoint of productivity, it is particularly preferable that the thickness can be set within the range of 100 μm or more and 350 μm or less. It can be said that such a dicing tape capable of reducing the thrust height is excellent in pick-up property.

As described above, the pressure-sensitive adhesive layer composed of the base film 1 containing the ionomer of the specific polyamide resin-containing ethylene/unsaturated carboxylic acid copolymer as the main component and the specific active energy ray-curable pressure-sensitive adhesive composition The dicing tape 10 of the present invention comprising 2 is a dicing die-bonding film in which a die-bonding film (adhesive layer) 3 is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. When used as a shape of 20, it has high fluidity like a wire-embedded die-bonding film, and even when a die-bonding film with a large thickness is laminated and applied, it has heat resistance that can withstand heat treatment in each process. , the semiconductor wafer 30 with the die bond film 3 can be cut well by cool expansion, and the kerf width can be sufficiently secured by room temperature expansion, and in the die bond film 3 a after cutting, the adhesive layer of the dicing tape 10 Partial detachment (lifting) from the die-bonding film 3a can be sufficiently suppressed, and the cut individual semiconductor chips 30a with the die-bonding film 3a can be favorably picked up.

The manufacturing method described with reference to FIGS. 8A to 8F is an example (SDBG) of manufacturing the semiconductor chip 30a using the dicing die-bonding film 20, and the dicing tape 10 is used as the dicing die-bonding film 20. The method used is not limited to the above method. In other words , the dicing die-bonding film 20 can be used without being limited to the above method as long as it can be attached to the semiconductor wafer 30 during dicing.

Above all, the dicing tape 10 of the present invention is suitable as a dicing tape for use as a dicing die-bonding film integrated with a wire-embedded die-bonding film in a manufacturing method for obtaining a thin film semiconductor chip such as DBG, stealth dicing, SDBG, and the like. be. Of course, it is also possible to integrate with a general-purpose die-bonding film.

<Method for manufacturing a semiconductor device>
A semiconductor device having a semiconductor chip manufactured using a dicing die-bonding film 20 integrating a dicing tape 10 and a die-bonding film 3 to which the present embodiment is applied will be specifically described below.

A semiconductor device (semiconductor package) is produced by, for example, bonding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a described above to a support member for mounting a semiconductor chip or a semiconductor chip by thermocompression bonding, followed by a wire bonding process and sealing. It can be obtained through processes such as a sealing process using a material.

FIG. 9 shows one example of a semiconductor device having a laminated structure in which a semiconductor chip manufactured using a dicing die-bonding film 20 integrating a dicing tape 10 and a wire-embedded die-bonding film 3 to which the present embodiment is applied is mounted. 1 is a schematic cross-sectional view of an embodiment; FIG. A semiconductor device 70 shown in FIG. 9 includes a semiconductor chip mounting support substrate 4, cured die-bonding films (adhesive layers) 3a1 and 3a2, a first-stage semiconductor chip 30a1, a second-stage semiconductor chip 30a2, and a sealing material 8 . The semiconductor chip mounting support substrate 4, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 9 for the semiconductor chip 30a2.

A plurality of external connection terminals 5 are arranged on one surface of the semiconductor chip mounting support substrate 4 , and a plurality of terminals 6 are arranged on the other surface of the semiconductor chip mounting support substrate 4 . The semiconductor chip mounting support substrate 4 has wires 7 for electrically connecting connection terminals (not shown) of the semiconductor chips 30 a 1 and 30 a 2 and the external connection terminals 5 . The semiconductor chip 30a1 is adhered to the semiconductor chip mounting support substrate 4 by the cured die bond film 3a1 in such a manner as to fill the irregularities resulting from the external connection terminals 5. As shown in FIG. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 with a cured die bond film 3a2. Semiconductor chip 30 a 1 , semiconductor chip 30 a 2 and wires 7 are sealed with sealing material 8 . Thus, the wire-embedded die-bonding film 3a is suitably used for a semiconductor device having a laminated structure in which a plurality of semiconductor chips 30a are stacked.

FIG. 10 shows another mode of a semiconductor device on which a semiconductor chip manufactured using a dicing die-bonding film 20 in which a dicing tape 10 to which the present embodiment is applied and a general-purpose die-bonding film 3 are integrated is mounted. is a schematic cross-sectional view of. A semiconductor device 80 shown in FIG. 10 includes a semiconductor chip mounting support substrate 4 , a cured die bond film 3 a , a semiconductor chip 30 a and a sealing material 8 . The semiconductor chip mounting support substrate 4 is a support member for the semiconductor chip 30a, and includes connection terminals (not shown) of the semiconductor chip 30a and external connections disposed on the main surface of the semiconductor chip mounting support substrate 4. It has a wire 7 for electrical connection with a terminal (not shown). The semiconductor chip 30a is adhered to the semiconductor chip mounting support substrate 4 by the cured die bond film 3a. Semiconductor chip 30 a and wires 7 are sealed with sealing material 8 .

The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these.

1. Preparation of Base Film 1 As materials for preparing base films 1(a) to (s), the following resins were prepared.

(Resin (A) made of ionomer of ethylene/unsaturated carboxylic acid copolymer)
・Resin (IO1)
Terpolymer having a mass ratio of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10, degree of neutralization with Zn ²⁺ ions: 60 mol%, melting point: 86°C, MFR: 1 g/10 minutes (190°C/2.16 kg load), density: 0.96 g/cm ³
・Resin (IO2)
Binary copolymer with a mass ratio of ethylene/methacrylic acid = 85/15, degree of neutralization with Zn ²⁺ ions: 23 mol%, melting point: MFR: 5 g/10 min (190°C/2.16 kg load), melting point: 91°C, density: 0.95 g/cm ³

(Polyamide resin (B))
・Resin (PA1)
Nylon 6, melting point: 225°C, density: 1.13 g/cm ³
・Resin (PA2)
Nylon 6-12, melting point: 215°C, density: 1.06 g/cm ³

(Other resin (C))
・Resin (EMAA1)
Binary copolymer with a mass ratio of ethylene/methacrylic acid = 91/9, melting point: 99°C, MFR: 3 g/10 min (190°C/2.16 kg load), density: 0.93 g/cm ³
・Resin (EMAA2)
Binary copolymer with a mass ratio of ethylene/methacrylic acid = 91/9, melting point: 98°C, MFR: 5 g/10 min (190°C/2.16 kg load), density: 0.93 g/cm ³
・Resin (PP)
Random copolymer polypropylene, melting point 138°C
・Resin (EVA)
Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94 g/cm ³
・Resin (PVC)
Vinyl chloride, melting point 95°C

(Base film 1 (a))
(IO1) was prepared as a resin (A) composed of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, the ionomer resin (A)=(IO1) and the polyamide resin (B)=(PA1) were dry-blended at a mass ratio of (A):(B)=95:5. Next, the dry-blended mixture was introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230° C. to obtain a resin composition for base film 1(a). The obtained resin composition is put into each extruder using a type 1 (same resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240 ° C. to form a three-layer structure of the same resin. A base film 1(a) having a thickness of 90 μm was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=95:5.

(Base film 1 (b))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry-blended at a mass ratio of (A):(B) = 90:10, except that the base film In the same manner as in 1(a), a base film 1(b) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=90:10.

(Base film 1 (c))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry-blended at a mass ratio of (A):(B) = 85:15, except that the base film In the same manner as in 1(a), a base film 1(c) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=85:15.

(Base film 1 (d))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A):(B) = 80:20, except that the base film In the same manner as in 1(a), a base film 1(d) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=80:20.

(Base film 1 (e))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry-blended at a mass ratio of (A):(B) = 74:26. In the same manner as in 1(a), a base film 1(e) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=74:26.

(Base film 1 (f))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A):(B) = 72:28, except that the base film In the same manner as in 1(a), a base film 1(f) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=72:28.

(Base film 1 (g))
(IO1) was prepared as a resin (A) composed of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, as the resins for the first layer and the third layer, the above ionomer resin (A)=(IO1) and the above polyamide resin (B)=(PA1) were used as (A):(B)=72:28. It was dry blended at a mass ratio of Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230 ° C. to obtain the resin composition for the first layer and the third layer of the base film 1 (g). got stuff Also, as the resin for the second layer, the ionomer resin (A)=(IO1) was used alone. Each resin composition and resin are charged into each extruder using a 2-type (2-type resin) 3-layer T-die film molding machine, molded under the conditions of a processing temperature of 240 ° C., and 2 types of resin A base film 1 (g) having a thickness of 90 μm and having a three-layer structure was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=81:19.

(Base film 1 (h))
(IO1) was prepared as the ionomer resin (A), (PA1) as the polyamide resin (B), and (EMAA1) as the other resin (C). First, as the resins for the first layer and the third layer, the above ionomer resin (A)=(IO1) and the above polyamide resin (B)=(PA1) were used as (A):(B)=85:15. It was dry blended at a mass ratio of Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230 ° C. to obtain the resin composition for the first layer and the third layer of the base film 1 (h). got stuff In addition, as the resin for the second layer, (EMAA1) of the other resin (C) was used alone. Each resin composition and resin are charged into each extruder using a two-type (two-type resin) three-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240 ° C., and two types of resin A base film 1 (h) having a thickness of 80 μm and having a three-layer structure was produced. The thickness of each layer was 30 μm/20 μm/30 μm (first layer (surface side contacting adhesive layer 2)/second layer/third layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=85:15. The total content of resin (A) and resin (B) in the entire layer is 75% by mass.

(Base film 1(i))
(IO1) was prepared as a resin (A) composed of an ionomer, (PA1) as a polyamide resin (B), and (EMAA2) as another resin (C). First, as the resins for the first layer and the third layer, the above ionomer resin (A) = (IO1) and the above polyamide resin (B) = (PA1) were used at a ratio of (A):(B) = 90:10. It was dry blended at a mass ratio of Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230 ° C. to obtain the resin composition for the first layer and the third layer of the base film 1 (i). got stuff Further, as the resin for the second layer, (EMAA2) of the other resin (C) was used alone. Each resin composition and resin are charged into each extruder using a 2-type (2-type resin) 3-layer T-die film molding machine, molded under the conditions of a processing temperature of 240 ° C., and 2 types of resin A base film 1(i) having a thickness of 90 μm and having a three-layer structure was produced. The thickness of each layer was 35 μm/20 μm/35 μm for the first layer (the side in contact with the pressure-sensitive adhesive layer 2)/second layer/third layer. The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=90:10. The total content of resin (A) and resin (B) in the entire layer was 78% by mass.

(Base film 1 (j))
(IO1) was prepared as a resin (A) composed of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, as the resins for the first layer and the second layer, the above ionomer resin (A) = (IO1) and the above polyamide resin (B) = (PA1) were used, (A):(B) = 90:10. It was dry blended at a mass ratio of Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230 ° C. to obtain the resin composition for the first layer and the second layer of the base film 1 (j). got stuff Each resin composition is put into each extruder using a one-type (same resin) two-layer T-die film molding machine, and molded under the conditions of a processing temperature of 240 ° C. The thickness of the two-layer structure of the same resin A base film 1(j) having a thickness of 90 μm was produced. The thickness of each layer was set to 1st layer (side in contact with pressure-sensitive adhesive layer 2)/2nd layer=45 μm/45 μm. The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=90:10.

(Base film 1 (k))
(IO1) was prepared as a resin (A) composed of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, as the resin for the first layer, the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A):(B) = 90:10. bottom. Next, the dry-blended mixture was introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230° C. to obtain a resin composition for the first layer of the base film 1(k). . Subsequently, as the resin for the second layer, the ionomer resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dried at a mass ratio of (A):(B) = 80:20. Blended. Next, the dry-blended mixture was introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230° C. to obtain a resin composition for the second layer of the base film 1(k). . Each resin composition is put into each extruder using a 2-type (same resin) 2-layer T-die film molding machine, and molded at a processing temperature of 240 ° C. to form a 2-layer structure of 2 types of resin. A base film 1(k) having a thickness of 100 μm was produced. The thickness of each layer was set to 1st layer (the side in contact with the pressure-sensitive adhesive layer 2)/2nd layer=50 μm/50 μm. The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=90:10.

(Base film 1 (l))
(IO1) was prepared as a resin (A) composed of an ionomer, and (PA1) was prepared as a polyamide resin (B). The ionomer resin (A)=(IO1) and the polyamide resin (B)=(PA1) were dry-blended at a mass ratio of (A):(B)=70:30. Next, the dry-blended mixture was charged into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230° C. to obtain a resin composition for base film 1(l). The resulting resin composition was put into an extruder using a T-die film molding machine, and molded at a processing temperature of 240° C. to produce a base film 1(l) having a single-layer structure and a thickness of 90 μm. bottom.

(Base film 1 (m))
(IO1) was prepared as a resin (A) composed of an ionomer, and (PA2) was prepared as a polyamide resin (B). The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA2) were dry-blended at a mass ratio of (A):(B) = 88:12. In the same manner as in 1(a), a base film 1(m) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=88:12.

(Base film 1 (n))
(IO2) was prepared as a resin (A) composed of an ionomer, and (PA1) was prepared as a polyamide resin (B). The resin (A) = (IO2) made of the ionomer and the polyamide resin (B) = (PA1) were dry-blended at a mass ratio of (A):(B) = 92:8, except that the base film In the same manner as in 1(a), a base film 1(n) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=92:8.

(Base film 1 (o))
(IO1) was prepared as a resin (A) composed of an ionomer. Polyamide resin (B) = (PA1) was not dry-blended, but in the same manner as the base film 1 (a), the thickness of the three-layer structure of the same resin (only resin (A) made of ionomer) A base film 1(o) having a thickness of 90 μm was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer).

(Base film 1 (p))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry-blended at a mass ratio of (A):(B) = 97:3. In the same manner as in 1(a), a base film 1(p) having a thickness of 90 μm and having a three-layer structure made of the same resin was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=97:3.

(Base film 1 (q))
The resin (A) = (IO1) made of the ionomer and the polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A):(B) = 70:30, except that the base film In the same manner as in 1(q), a base film 1(q) having a three-layer structure of the same resin and a thickness of 90 μm was produced. The thickness of each layer was 30 μm/30 μm/30 μm (1st layer (side contacting adhesive layer 2)/2nd layer/3rd layer). The mass ratio of the total amount of the ionomer resin (A) and the total amount of the polyamide resin (B) in the entire layer is the total amount of (A):total amount of (B)=70:30.

(Base film 1 (r))
(PP) and (EVA) were prepared as other resins (C). (PP) is used as the resin for the first and third layers, and (EVA) is used as the resin for the second layer. were put into respective extruders, and molded at a processing temperature of 150° C. to produce a base film 1(r) having a thickness of 80 μm with a two-kind three-layer structure. The thickness of each layer was set to 1st layer (the side in contact with the pressure-sensitive adhesive layer)/2nd layer/3rd layer=8 μm/64 μm/8 μm.

(Base film 1 (s))
As another resin (C), (PVC) was prepared. This resin was put into an extruder using a T-die film molding machine and molded at a processing temperature of 150° C. to produce a base film 1(s) having a single layer structure and a thickness of 90 μm.

[Stress at 5% elongation at -15 ° C. of base film]
For the substrate films 1(a) to (s) produced above, the stress when elongated by 5% was determined in a temperature environment of -15°C. As a test piece, when the extrusion direction at the time of melt molding with a T die is the MD direction, and the direction perpendicular to the MD direction is the TD direction, (1) cut to a size of 70 mm length in the MD direction and 10 mm width in the TD direction and (2) a test piece cut to a size of 70 mm long in the TD direction and 10 mm wide in the MD direction. Subsequently, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Inc., the test piece was placed in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Inc. at -15 ° C. After leaving for 1 minute, the test piece was elongated in the longitudinal direction with a chuck distance of 50 mm and an elongation speed (tensile speed) of 300 mm / min, and stretched 5% with respect to the initial length (chuck distance of 50 mm). The strength (unit: N) was measured. The obtained strength was divided by the cross-sectional area of the tape (unit: mm ² ) to obtain the stress (unit: MPa) at 5% elongation at -15°C.

[Heat resistance of base film]
The heat resistance at 140° C. was evaluated for the substrate films 1(a) to (s) produced above. A test piece having a length of 100 mm in the MD direction and a width of 30 mm in the TD direction was prepared, and a marked line with a length of 60 mm was drawn in the center of the test piece with a marker in the MD direction. Suspend each test piece in a constant temperature bath (adjusted to 140 ° C.) so that the MD direction is up and down, apply a load of 5 g to the lower side of each test piece, and store it in an environment of 140 ° C. for 2 minutes. The marked line length L1 (mm) was measured, and the rate of change relative to the marked line length L0 (=60 mm) before the heating test was calculated.
Rate of change (%) = [(L1-L0)/L0] x 100
The heat resistance of the base film 1 was evaluated according to the following criteria, and the evaluation of B or higher was judged to have good heat resistance.
A: The rate of change was within the range of ±10%.
B: The rate of change exceeded the range of ±10% and was within the range of ±14%.
C: The rate of change exceeded the range of ±14%.

2. Preparation of Adhesive Composition Solution As the adhesive composition for the adhesive layer 2 of the dicing tape 10, solutions of the following active energy ray-curable acrylic adhesive compositions 2 (a) to (r) were prepared. .
As a copolymer monomer component constituting the base polymer (acrylic acid ester copolymer) of these pressure-sensitive adhesive compositions,
- 2-ethylhexyl acrylate (2-EHA, molecular weight: 184.3, Tg: -70°C),
- 2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15 ° C.),
- butyl acrylate (BA, molecular weight: 128.17, Tg: -54 ° C.),
- methyl methacrylate (MMA, molecular weight: 100.12: Tg: 105°C),
- methacrylic acid (MAA, molecular weight: 86.06: Tg: 130°C),
prepared.
Further, as a polyisocyanate-based cross-linking agent, TDI-based polyisocyanate-based cross-linking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, solid content concentration: 45% by mass, isocyanate group content in solution: 8. 05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups: average 2.8 per molecule, molecular weight: 656.64),
· HDI-based polyisocyanate-based cross-linking agent (trade name: Coronate HL, solid content concentration: 75 mass%, isocyanate group content in solution: 12.8 mass%, isocyanate group content in solid content: 17.07 % by mass, calculated number of isocyanate groups: average 2.6/1 molecule, molecular weight: 638.75),
prepared.

(Solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a))
2-Ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA) were prepared as copolymerizable monomer components. 2-EHA/2-HEA/MMA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol) of these copolymerizable monomer components Mix to achieve the copolymerization ratio, and use ethyl acetate as a solvent and azobisisobutyronitrile (AIBN) as an initiator to form a solution of a base polymer having a hydroxyl group (acrylic acid ester copolymer) by solution radical polymerization. Synthesized. The Tg of the resulting base polymer calculated from the Fox equation is -60°C.

Next, for 100 parts by mass of the solid content of this base polymer, an isocyanate group and an active energy ray-reactive carbon-carbon double bond manufactured by Showa Denko KK are added as an active energy ray-reactive compound manufactured by Showa Denko KK. 2-isocyanatoethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1/1 molecule, double bond group: 1/1 molecule) 21.0 parts by mass (135.35 mmol: 74.8 mol% with respect to 2-HEA) and reacted with part of the hydroxyl groups of 2-HEA to obtain a solution of acrylic adhesive polymer (A) having carbon-carbon double bonds in side chains ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 380,000, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, carbon-carbon double bond content: 1.12 mmol /g) were synthesized. In the above reaction, 0.05 part by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor for maintaining the reactivity of carbon-carbon double bonds.

Subsequently, IGM Resins B.I. V. 2.0 parts by mass of an α-hydroxyalkylphenone-based photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B.V. V. 0.4 parts by mass of an acylphosphine oxide-based photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation as a cross-linking agent, and a TDI-based polyisocyanate-based cross-linking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, Solid content concentration: 45% by mass) was blended at a ratio of 2.56 parts by mass (1.15 parts by mass in terms of solid content, 1.75 mmol), diluted with ethyl acetate and stirred to obtain a solid content concentration of 22% by mass. A solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was prepared. Equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate cross-linking agent and the hydroxyl group (OH) of the acrylic adhesive polymer in the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was 0.13, the residual hydroxyl group concentration was 0.32 mmol/g, and the carbon-carbon double bond content was 1.11 mmol/g.

(Solutions of active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(t))
For the acrylic adhesive polymer (A), as shown in Tables 3 to 6, the copolymerization ratio of the copolymerization monomer component, the amount of the active energy ray-reactive compound, and the copolymerization monomer component were changed as appropriate. , acrylic adhesive polymers (B) to (Q) were synthesized respectively. The base polymer Tg, weight average molecular weight Mw, acid value and hydroxyl value of the synthesized acrylic adhesive polymers (B) to (Q) are shown in Tables 3 to 6, respectively. Subsequently, using these acrylic adhesive polymer solutions, 100 parts by mass of the acrylic adhesive polymers (A) to (Q) in terms of solid content were treated with light as shown in Tables 3 to 6, respectively. A polymerization initiator and a polyisocyanate-based cross-linking agent were appropriately blended to prepare solutions of active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(t). Equivalent ratio of the isocyanate group (NCO) possessed by the polyisocyanate cross-linking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer in the active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(t) (NCO/OH), residual hydroxyl group concentration and carbon-carbon double bond content are shown in Tables 3 to 6, respectively.

3. Preparation of Adhesive Composition Solution As the adhesive composition for the die bond film (adhesive layer) 3 of the dicing die bond film 20, solutions of the following adhesive compositions 3(a) to 3(d) were prepared.

(Solution of Adhesive Composition 3(a))
For a wire-embedded die-bonding film, the following adhesive composition solution 3(a) was prepared and prepared. First, as a thermosetting resin, 26 parts by mass of a bisphenol type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd., cresol novolak type epoxy manufactured by Tohto Kasei Co., Ltd. Resin (trade name: YDCN-700-10, epoxy equivalent 210, softening point 80 ° C.) 36 parts by mass, phenolic resin manufactured by Mitsui Chemicals, Inc. as a cross-linking agent (trade name: Milex XLC-LL, hydroxyl equivalent: 175, softening Point: 77 ° C., water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 1 part by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71 ° C., water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 25 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83 ° C. , Water absorption: 1% by mass, Heating mass reduction rate: 3% by mass) 12 parts by mass, Silica filler dispersion manufactured by Admatechs Co., Ltd. as an inorganic filler (trade name: SC2050-HLG, average particle size: 0.50 μm) 15 parts by mass, silica filler dispersion manufactured by Admatechs Co., Ltd. (trade name: SC1030-HJA, average particle size: 0.25 μm) 14 parts by mass, silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle Cyclohexanone as a solvent was added to a resin composition consisting of 1 part by mass of 0.016 μm in diameter, mixed with stirring, and further dispersed for 90 minutes using a bead mill.

Next, in the resin composition, 37 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a low weight average molecular weight Mw as a thermoplastic resin, a glycidyl group-containing (meth)acrylic acid ester copolymer having a high weight average molecular weight Mw Polymer 9 parts by mass, 0.7 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation 0.3 parts by mass of ethoxysilane (trade name: NUC A-189), and 0.03 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Cursol 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator The mixture was stirred and mixed, filtered through a 100-mesh filter, and vacuum deaerated to prepare a solution of adhesive composition 3(a) having a solid concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin and cross-linking agent) is glycidyl group-containing (meth) acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 % by mass: 42.5% by mass: 26.0% by mass. Moreover, the content of the inorganic filler was 20.5% by mass with respect to the total amount of the resin component.

(Solution of Adhesive Composition 3(b))
For a wire-embedded die-bonding film, the following adhesive composition solution 3(b) was prepared and prepared. First, as a thermosetting resin, Toto Kasei Co., Ltd. bisphenol F type epoxy resin (trade name: YDF-8170C, epoxy equivalent: 159, molecular weight: 310, liquid at room temperature) 21 parts by mass , Toto Kasei Co., Ltd. Cresol novolac type epoxy resin (trade name: YDCN-700-10, epoxy equivalent 210, softening point 80 ° C.) 33 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. as a cross-linking agent (trade name: HE200C-10, hydroxyl equivalent : 200, softening point: 71 ° C., water absorption: 1% by mass, heating mass reduction rate: 4% by mass) 46 parts by mass, silica filler dispersion manufactured by Admatechs Co., Ltd. as an inorganic filler (trade name: SC1030-HJA, Cyclohexanone was added as a solvent to 18 parts by mass of a resin composition having an average particle diameter of 0.25 μm, and the mixture was stirred and mixed, and then dispersed for 90 minutes using a bead mill.

Next, 16 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a low weight average molecular weight Mw as a thermoplastic resin and a glycidyl group-containing (meth)acrylic acid ester copolymer having a high weight average molecular weight Mw are added to the resin composition. 64 parts by mass of polymer, 1.3 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation 0.6 parts by mass of ethoxysilane (trade name: NUC A-189), and 0.05 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Cursol 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator After addition, the mixture was stirred and mixed, filtered through a 100-mesh filter, and vacuum degassed to prepare a solution of adhesive composition 3(b) having a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin and cross-linking agent) is glycidyl group-containing (meth) acrylic acid ester copolymer: epoxy resin: phenol resin = 44.4 % by mass: 30.0% by mass: 25.6% by mass. Moreover, the content of the inorganic filler was 10.0% by mass with respect to the total amount of the resin component.

(Solution of Adhesive Composition 3(c))
For a wire-embedded die-bonding film, the following adhesive composition solution 3(c) was prepared and prepared. First, as a thermosetting resin, 11 parts by mass of a bisphenol type epoxy resin manufactured by Printec Co., Ltd. (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature), dicyclopentadiene type epoxy manufactured by DIC Corporation. Resin (trade name: HP-7200H, epoxy equivalent: 280, softening point: 83°C) 40 parts by mass, bisphenol S type epoxy resin manufactured by DIC Corporation (trade name: EXA-1514, epoxy equivalent: 300, softening point: 75°C) 18 Parts by mass, phenolic resin manufactured by Mitsui Chemicals, Inc. as a cross-linking agent (trade name: Milex XLC-LL, hydroxyl equivalent: 175, softening point: 77 ° C., water absorption: 1% by mass, mass reduction rate on heating: 4% by mass) 1 part by mass, phenolic resin manufactured by Air Water Inc. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71 ° C., water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 20 mass Part, phenolic resin manufactured by Air Water Inc. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83 ° C., water absorption: 1% by mass, mass reduction rate on heating: 3% by mass) 10 parts by mass, As an inorganic filler, 24 parts by mass of silica filler dispersion manufactured by Admatechs Co., Ltd. (trade name: SC1030-HJA, average particle size: 0.25 μm), silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size : 0.016 μm)), cyclohexanone was added as a solvent, mixed with stirring, and further dispersed for 90 minutes using a bead mill.

Next, in the resin composition, 30 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer having a low weight average molecular weight Mw as a thermoplastic resin, a glycidyl group-containing (meth)acrylic acid ester copolymer having a high weight average molecular weight Mw Polymer 7.5 parts by mass, 0.57 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent, γ-ureido manufactured by GE Toshiba Corporation 0.29 parts by mass of propyltriethoxysilane (trade name: NUC A-189), and 0.023 of 1-cyanoethyl-2-phenylimidazole (trade name: Cursol 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. Parts by mass were added, stirred and mixed, filtered through a 100-mesh filter, and vacuum degassed to prepare a solution of adhesive composition 3(c) having a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin and cross-linking agent) is glycidyl group-containing (meth) acrylic acid ester copolymer: epoxy resin: phenol resin = 27.3 % by mass: 50.2% by mass: 22.5% by mass. Moreover, the content of the inorganic filler was 18.0% by mass with respect to the total amount of the resin component.

(Solution of Adhesive Composition 3(d))
A solution of the following adhesive composition 3(d) was prepared and prepared for a general-purpose die-bonding film. First, as a thermosetting resin, Toto Kasei Co., Ltd. cresol novolac type epoxy resin (trade name: YDCN-700-10, epoxy equivalent 210, softening point 80 ° C.) 54 parts by mass, Mitsui Chemicals Co., Ltd. as a cross-linking agent Phenol resin (trade name: Milex XLC-LL, hydroxyl equivalent: 175, water absorption: 1.8%) 46 parts by mass, silica manufactured by Nippon Aerosil Co., Ltd. as an inorganic filler (trade name: Aerosil R972, average particle size 0.8%). Cyclohexanone as a solvent was added to a resin composition consisting of 32 parts by mass of 0.16 μm), mixed with stirring, and further dispersed for 90 minutes using a bead mill.

Next, to the resin composition, 74 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, γ-ureidopropyltriethoxysilane (manufactured by GE Toshiba Corporation as a silane coupling agent) ( Product name: NUC A-1160) 5.0 parts by mass, γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by GE Toshiba Corporation 1.7 parts by mass, and Shikoku Kasei Co., Ltd. as a curing accelerator Add 0.1 part by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curesol 2PZ-CN) manufactured by the company, stir and mix, filter through a 100-mesh filter, deaerate under vacuum, and solid content concentration is 20 mass. % of adhesive composition 3(d) was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin and cross-linking agent) is glycidyl group-containing (meth) acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 % by mass: 14.4% by mass: 12.3% by mass. Moreover, the content of the inorganic filler was 8.6% by mass with respect to the total amount of the resin component.

4. Preparation of dicing tape 10 and dicing die-bonding film 20 (Example 1)
The active energy ray-curable acrylic pressure-sensitive adhesive composition (a) was applied to the release-treated surface side of the release liner (thickness: 38 µm, polyethylene terephthalate film) so that the thickness of the pressure-sensitive adhesive layer 2 after drying was 8 µm. After drying the solvent by applying the solution and heating at a temperature of 100 ° C. for 3 minutes, the surface of the first layer side of the base film 1 (a) is attached to the adhesive layer 2, and the dicing tape 10 A raw fabric was produced. Thereafter, the original roll of the dicing tape 10 was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer 2 .

Next, a solution of the adhesive composition 3 (a) for forming the die-bonding film (adhesive layer) 3 is prepared, and the dried die-bonding film ( The solution of the adhesive composition 3(a) is applied so that the adhesive layer) 3 has a thickness of 50 μm, and is first heated at a temperature of 90° C. for 5 minutes and then at a temperature of 140° C. for 5 minutes. The solvent was dried by heating in two stages, and a die-bonding film (adhesive layer) 3 provided with a release liner was produced. A protective film (for example, a polyethylene film or the like) may be attached to the dry surface side of the die bond film (adhesive layer) 3, if necessary.

Subsequently, the die-bonding film (adhesive layer) 3 provided with the release liner prepared above is cut into a circle with a diameter of 335 mm together with the release liner, and the adhesive layer-exposed surface of the die-bonding film (adhesive layer) 3 (peeling The liner-free surface) was attached to two surfaces of the pressure-sensitive adhesive layer of the dicing tape 10 from which the release liner was removed. The bonding conditions were 23° C., 10 mm/sec, and linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 into a circle with a diameter of 370 mm, a circular die bond film (adhesive layer) 3 with a diameter of 335 mm is laminated on the center part of the adhesive layer 2 of the circular dicing tape 10 with a diameter of 370 mm. A dicing die-bonding film 20 (DDF(a)) was produced.

(Examples 2 to 14)
Dicing die bond film 20 (DDF ( b) to DDF(n)) were produced. However, only in Examples 10 and 12, the thickness of the adhesive layer 2 was set to 7 μm and 15 μm, respectively.

(Examples 15-27)
A solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) is added to the solutions of the active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(n) shown in Tables 3 to 5, respectively. A dicing die-bonding film 20 (DDF(o) to DDF(aa)) was produced in the same manner as in Example 2 except for the changes.

(Example 28)
A dicing die-bonding film 20 (DDF(bb)) was produced in the same manner as in Example 2, except that the thickness of the adhesive layer 2 after drying was changed to 6 μm.

(Example 29)
A dicing die-bonding film 20 (DDF (cc)) was produced in the same manner as in Example 2, except that the thickness of the adhesive layer 2 after drying was changed to 20 μm.

(Example 30)
All except that the solution of the adhesive composition 3(a) was changed to the solution of the adhesive composition 3(b) and the thickness of the die-bonding film (adhesive layer) 3 after drying was changed to 30 μm. A dicing die-bonding film 20 (DDF(dd)) was produced in the same manner as in Example 2.

(Example 31)
A dicing die-bonding film 20 (DDF(ee)) was produced in the same manner as in Example 2, except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(c).

(Example 32)
Everything except changing the solution of the adhesive composition 3(a) to the solution of the adhesive composition 3(d) and changing the thickness of the die-bonding film (adhesive layer) 3 after drying to 20 μm. A dicing die-bonding film 20 (DDF(ff)) was produced in the same manner as in Example 2.

(Comparative Examples 1 to 6)
The base film 1 (a) was changed to the base film 1 (o), and the solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2 (a) was added to the active energy ray-curable acrylic adhesive composition shown in Table 6. A dicing die-bonding film 20 (DDF (gg) to DDF (ll)) was prepared in the same manner as in Example 1, except that the solutions of the pressure sensitive adhesive compositions 2 (o) to 2 (t) were used.

(Comparative Examples 7 to 12)
The solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was changed to the solutions of the active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(o) to 2(t) shown in Table 7, respectively. A dicing die-bonding film 20 (DDF (mm) to DDF (rr)) was produced in the same manner as in Example 2 except for the above.

(Comparative Example 13)
A dicing die-bonding film 20 (DDF(ss)) was produced in the same manner as in Example 1, except that the base film 1(a) was changed to the base film 1(o).

(Comparative Example 14)
A dicing die-bonding film 20 (DDF(tt)) was produced in the same manner as in Example 1, except that the base film 1(a) was changed to the base film 1(p).

(Comparative Example 15)
A dicing die-bonding film 20 (DDF(uu)) was produced in the same manner as in Example 1, except that the base film 1(a) was changed to the base film 1(q).

(Comparative Example 16)
A dicing die-bonding film 20 (DDF(vv)) was produced in the same manner as in Comparative Example 1, except that the base film 1(a) was changed to the base film 1(r).

(Comparative Example 17)
A dicing die-bonding film 20 (DDF (ww)) was produced in the same manner as in Comparative Example 1, except that the base film 1(a) was changed to the base film 1(s).

5. Evaluation method of dicing die-bonding film Dicing tapes 10 and dicing die-bonding films 20 (DDF(a) to DDF(ww)) produced in Examples 1 to 32 and Comparative Examples 1 to 17 were measured and evaluated by the following methods. did

5.1 Measurement of shear viscosity of die-bonding film (adhesive layer) 3 at 80° C. For each die-bonding film (adhesive layer) 3 formed from the solutions of adhesive compositions 3(a) to 3(d), The shear viscosity at 80°C was measured by the following method. That is, a laminate was produced by laminating a plurality of die-bonding films (adhesive layer) 3 from which the release liner was removed at 70° C. so that the total thickness would be 200 to 210 μm. Next, the laminate was punched out in the thickness direction into a size of 10 mm×10 mm to obtain a measurement sample. Subsequently, using a dynamic viscoelasticity apparatus ARES (manufactured by Rheometric Scientific F.E. Inc.), a circular aluminum plate jig with a diameter of 8 mm was mounted, and then a measurement sample was set. The shear viscosity was measured while applying a strain of 5% to the measurement sample at 35°C and heating the measurement sample at a heating rate of 5°C/min to determine the value of the shear viscosity at 80°C.

5.2 Measurement of adhesive strength after UV irradiation of adhesive layer 2 of dicing tape 10 to die bond film (adhesive layer) 3 Prepared separately. The dicing tape 10 is cut into a size of 30 mm in width (TD direction of the base film 1) and 300 mm in length (MD direction of the base film 1), and the die bond film 20 is cut into a size of 30 mm in width and 100 mm in length. bottom. The adhesive layer exposed surface (the surface without the release liner) of the die-bonding film (adhesive layer) 3 was placed at a temperature of 23° C. and a humidity In an environment of 50% RH, while pressing with a 2 kg rubber roller, they were neatly overlapped and pasted together. After curing this laminate for 24 hours in an environment of 5°C, a 2 kg rubber roller was applied to the surface of the die bond film (adhesive layer) 3 from which the release liner was removed in an environment of 23°C and 50% RH. Then, an OPP film-based single-sided adhesive tape 11 (trade name: Easy Cut Tape 207H, thickness 70 μm) manufactured by Oji Tac Co., Ltd. was adhered while pressing the adhesive layer side surface to form a backing. This laminate was cut again with a new cutter blade so as to have a width of 25 mm, and a test piece as shown in FIG. 11(a) was obtained. Next, as shown in FIG. 11(b), the surface of the OPP film substrate single-sided adhesive tape 11 side of the test piece was subjected to an angle-variable type adhesive/film peeling analyzer (model: VPA-2S, Kyowa Interface Science Co., Ltd.). A paper double-sided adhesive tape 12 (trade name: No. 5486, thickness: 140 μm) manufactured by Maxell, Ltd. was fixed to the center of a flat plate cross stage for a 2-kg rubber roller while being crimped. Subsequently, from the base film 1 side of the dicing tape 10 of the dicing die-bonding film 20, a metal halide lamp was used to irradiate ultraviolet rays (UV) with a central wavelength of 365 nm (irradiation intensity: 70 mW/cm ² , integrated light amount 150 mJ/cm ² ) After that, the flat plate cross stage to which the test piece was fixed was mounted on an angle-adjustable type adhesion/film peeling analysis device, and in an environment with a temperature of 23 ° C. and a humidity of 50% RH, FIG. ), the dicing tape 10 side is pulled (actually, the flat plate cross stage moves) under the conditions of a peeling angle of 30 ° and a peeling speed of 600 mm / min, and the die bond film (adhesive layer) The low-angle (30° peeling angle) adhesive strength (unit: N/25 mm) of the dicing tape 10 against 3 was measured (average value of test pieces N=3).

5.3 Shear Adhesive Strength of Adhesive Layer 2 of Dicing Tape 10 to Die Bond Film 3 (Adhesive Layer) at −30° C. Dicing tape 10 and die bond film (adhesive layer) 3 were separately prepared. As for the dicing tape 10, 2 kg of PET film base single-sided adhesive tape 14 (trade name: No. 626001, thickness 55 μm) manufactured by Maxell, Ltd. as a backing tape is attached to the side of the base film 1 on the adhesive layer side. After bonding while pressing with a rubber roller, it was cut into a size of 10 mm in width (TD direction of base film 1) and 100 mm in length (MD direction of base film 1). Also, the die bond film 20 was cut into a size of 30 mm in width and 100 mm in length. As the die-bonding film 20, a die-bonding film (adhesive layer) 3 provided with a protective film (polyethylene film) on the dry surface side was used. First, the surface of the die-bonding film 20 from which the release liner has been carefully removed is pressed against the surface of a semiconductor wafer W (silicon mirror wafer, width 40 mm, length 100 mm, thickness 0.725 mm) using a 2 kg rubber roller. After bonding, it was sandwiched between two glass plates and pressure-bonded under a temperature of 40° C. with a load of 2 kg for 1 minute. Next, both ends of the semiconductor wafer W to which the die bond film (adhesive layer) 3 is adhered are attached to the SUS plate 15, and the PET film base single-sided adhesive tape 14 (trade name: No. 626001, thickness 55 μm), and the protective film of the die-bonding film (adhesive layer) 3 was peeled off to obtain an adherend for the shear adhesion test. Next, on the surface of the die-bonding film (adhesive layer) 3 of this adherend, the adhesive layer 2 surface from which the release liner of the dicing tape 10 has been removed is adhered so that a portion of 10 mm in the length direction from the end is in close contact, that is, They were stuck together so that the size of the contact surface was 10 mm × 10 mm (contact area: 100 mm ² ), pressed with a 2 kg rubber roller, and cured for 20 minutes in an environment with a temperature of 23 ° C. and a humidity of 50% RH. A PET film substrate single-sided adhesive tape 14 for fixing is not shown), and a test object as shown in Fig. 1 was obtained. Subsequently, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., the test object was placed in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Co., Ltd. at -30 ° C. , left for 1 minute, pulled in the vertical direction at a rate of 1,000 mm/min, and the adhesive force in the shear direction (unit: N/100 mm ² ) required at that time was measured (average value of test pieces N=3).

5.4 Evaluation of stealth dicing property of dicing die-bonding film 20 5.4.1 Semiconductor wafer cutting property and die-bonding film (adhesive layer) cutting property First, semiconductor wafer (silicon mirror wafer, thickness 750 μm, outer diameter 12 inches) W was prepared, and a commercially available back grind tape was pasted on one side. Then, a stealth dicing laser saw (device name: DFL7361) manufactured by Disco Co., Ltd. was used from the opposite side of the semiconductor wafer W to which the back grinding tape was attached, and the size of the semiconductor chip 30a after cutting was 4.5 mm. A modified region is formed at a predetermined depth position of the semiconductor wafer W by irradiating laser light along the grid-like dividing lines under the following conditions so as to have a size of 7 mm×7.2 mm. 30b was formed.
・Laser irradiation conditions (1) Laser oscillator type: Semiconductor laser excitation Q-switched solid-state laser (2) Wavelength: 1342 nm
(3) Oscillation form: Pulse (4) Frequency: 90kHz
(5) Output: 1.7W
(6) Movement speed of semiconductor wafer mounting table: 700 mm/sec

Next, using a back grinding device (device name: DGP8761) manufactured by DISCO Corporation, the semiconductor wafer W with a thickness of 750 μm in which the modified region 30b is formed and held by the back grinding tape is ground and thinned. Thus, a semiconductor wafer 30 having a thickness of 30 μm was obtained. Subsequently, a cool expansion process was carried out by the following method to evaluate the semiconductor wafer cutting property and the adhesive layer cutting property, which are one of the stealth dicing index items. Specifically, the surface of the semiconductor wafer 30 having a thickness of 30 μm and having the modified region 30b obtained by the above method, opposite to the side to which the back grinding tape was attached, was prepared in each example and comparative example. A lamination device (device name: DFM2800) manufactured by DISCO Corporation is used so that the adhesive layer 3 exposed by peeling the release liner from the dicing die-bonding film 20 is adhered to the semiconductor wafer 30. The dicing die-bonding film 20 is laminated under the conditions of a lamination temperature of 70° C. and a lamination speed of 10 mm/sec. The back grind tape was peeled off. Here, the dicing die-bonding film 20 is divided between the MD direction of the base film 1 and the vertical line direction of the grid-shaped division lines of the semiconductor wafer 30 (the TD direction of the base film 1 and the grid-shaped semiconductor wafer 30). It is affixed to the semiconductor wafer 30 so that the lateral line direction of the line to be divided coincides with the semiconductor wafer 30 .

A laminate (semiconductor wafer 30/adhesive layer 3/adhesive layer 2/base film 1) including the semiconductor wafer 30 after the formation of the modified region 30b held by the ring frame (wafer ring) 40 was manufactured by DISCO Corporation. (device name: DDS2300 Fully Automatic Die Separator). Next, under the following conditions, the semiconductor wafer 30 and the adhesive layer 3 were cut by cool-expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die bond film 20 with the semiconductor wafer 30. . Thus, a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained. In this example, the cool expansion step was performed under the following conditions. The cool expansion step may be performed at .
・Conditions for the cool expansion process Temperature: -15°C, cooling time: 80 seconds,
Expanding speed: 300 mm/sec,
Amount of expansion: 11 mm,
(4) Standby time: 0 seconds

The semiconductor wafer 30 and the adhesive layer 3 after cool expansion are observed from the surface side of the semiconductor wafer 30 using an optical microscope (type: VHX-1000) manufactured by Keyence Corporation at a magnification of 200 times, and are broken. The number of unbroken sides among the planned sides was counted. Then, for each of the semiconductor wafer 30 and the adhesive layer 3, the ratio of the number of cut sides to the total number of sides to be cut is calculated from the total number of sides to be cut and the total number of uncut sides. Calculated as a rate (%). The observation point with the optical microscope was performed on the entire surface of the semiconductor wafer 30 . The splittability of each of the semiconductor wafer 30 and the adhesive layer 3 was evaluated according to the following criteria, and an evaluation of B or higher was judged to have good splittability.
A: The breaking rate was 95% or more and 100% or less.
B: The breaking rate was 90% or more and less than 95%.
C: The breaking rate was less than 90%.

5.4.2 Peeling (floating) of the die-bonding film (adhesive layer) 3 from the adhesive layer 2 of the dicing tape 10
After canceling the above-mentioned cool expansion state, an expansion device manufactured by Disco Co., Ltd. (device name: DDS2300 Fully Automatic Die Separator) was used again, and the normal temperature expansion step was performed in the heat expander unit under the following conditions. .
・Condition temperature of room temperature expansion process: 23 ° C.,
Expanding speed: 30 mm/sec,
Amount of expansion: 9 mm,
(4) Standby time: 15 seconds

Next, while maintaining the expanded state, the dicing tape 10 was sucked by the suction table, and the suction table was lowered together with the workpiece while the suction by the suction table was maintained. Then, a heat shrink process was performed under the following conditions to heat-shrink the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area.
・Conditions of the heat shrink process Hot air temperature: 200°C,
Air volume: 40L/min,
The distance between the hot air outlet and the dicing tape 10: 20 mm,
Stage rotation speed: 7°/s

Subsequently, after the dicing tape 10 is released from the adsorption by the adsorption table, the die bond film (adhesive layer) 3 is peeled off from the adhesive layer 2 of the dicing tape 10 around the four sides of the cut individual semiconductor chips. The state was observed from the surface side of the semiconductor wafer 30 using an optical microscope (type: VHX-1000) manufactured by Keyence Corporation at a magnification of 50 times. Since the state of peeling of the die-bonding film (adhesive layer) 3 was observed to be substantially the same for the semiconductor chips 30a at any position, the number of observed semiconductor chips with the die-bonding film in the evaluation was the central portion of the semiconductor wafer 30. The average peeling state was observed for predetermined 20 pieces positioned at . According to the following criteria, the level of peeling (floating) of the die-bonding film (adhesive layer) 3 in the dicing die-bonding film 20 from the adhesive layer 2 of the dicing tape 10 when expanded is evaluated, and an evaluation of B or higher is considered good. It was judged.
A: No peeling of the die-bonding film from the pressure-sensitive adhesive layer was observed.
B: Detachment of the die-bonding film from the adhesive layer was slightly observed around the four sides of the semiconductor chip, but the percentage of the area where detachment was observed was less than 20% of the total area of the semiconductor chip. .
C: Detachment of the die-bonding film from the adhesive layer was clearly observed around the four sides of the semiconductor chip, and the percentage of the area where detachment was observed was 20% or more of the total area of the semiconductor chip.

5.4.3 Expandability (kerf width) of dicing tape 10 in dicing die-bonding film 20
In order to evaluate the level of peeling (floating) of the die bond film (adhesive layer) 3 from the adhesive layer 2 of the dicing tape 10, in the room temperature expansion process, when the dicing tape 10 was released from the adsorption by the adsorption table At the same time, the distance (kerf width) between the adjacent semiconductor chips 30a in that state is measured from the front surface side of the semiconductor wafer 30 using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation at a magnification of 200. The scalability of the dicing tape 10 in the dicing die-bonding film 20 was evaluated by observing and measuring with.

Specifically, four locations of one cutting cross line portion formed by four adjacent semiconductor chips 30a in the central portion 31 of the semiconductor wafer 30 shown in FIG. 2 locations in MD2, 2 locations in kerf TD1 and kerf TD2 in the TD direction of base film 1, see FIG. (MD direction: kerf MD3 to kerf MD5 three places, TD direction: kerf TD3 to kerf TD6 four places, not shown), two cutting crosses formed by six adjacent semiconductor chips 30a in the right part 33 7 points in the line portion (MD direction: 3 points from kerf MD6 to kerf MD8; TD direction: 4 points from kerf TD7 to kerf TD10, not shown); 7 locations of the two cutting cross line portions (MD direction: 4 locations from kerf MD9 to kerf MD12, TD direction: 3 locations from kerf TD11 to kerf TD13, not shown), and six adjacent semiconductor chips 30a in the lower part 35 7 locations of the two fracture cross line portions formed (MD direction: 4 locations from kerf MD13 to kerf MD16, TD direction: 3 locations from kerf TD14 to kerf TD16, not shown), a total of 32 locations (16 in the MD direction) , and 16 points in the TD direction), the distance between the adjacent semiconductor chips 30a is measured, and the average value of the 16 points in the MD direction is defined as the kerf width in the MD direction, and the average value of the 16 points in the TD direction is defined as the kerf width in the TD direction. Calculated. The expandability of the dicing tape 10 in the dicing die-bonding film 20 was evaluated according to the following criteria, and an evaluation of B or higher was judged to have good expandability.
A: Both the kerf width in the MD direction and the kerf width in the TD direction were 30 μm or more.
B: The value of the kerf width in the MD direction was 30 μm or more, and the value of the kerf width in the TD direction was 25 μm or more and less than 30 μm.
C: Either the kerf width in the MD direction or the kerf width in the TD direction was less than 25 μm.

5.5 Evaluation of pick-up property of dicing tape 10 in dicing die-bonding film 20 Base material of dicing tape 10 holding semiconductor chip 30a with die-bonding film (adhesive layer) 3a cut and separated by the expanding process From the film 1 side, ultraviolet rays (UV) with a center wavelength of 365 nm were irradiated so that the integrated light amount was 150 mJ/cm ² at an irradiation intensity of 70 mW/cm ² to cure the pressure-sensitive adhesive layer 2, thereby obtaining a pick-up evaluation sample. and

Subsequently, a pick-up test was performed using a device having a pick-up mechanism (device name: die bonder DB-830P) manufactured by Fasford Technology Co., Ltd. (former Hitachi High-Technologies Corporation). The size of the pick-up collet was 4.5×7.1 mm, the number of push-up pins was 12, and the pick-up conditions were as follows: push-up speed of the push-up pin was 10 mm/sec, and the push-up height of the push-up pin was 200 μm. bottom. The number of pick-up trie samples was 50 (chips) at a predetermined position, and the pick-up property of the dicing tape 10 on the dicing die-bonding film 20 was evaluated according to the following criteria. .
A: 50 chips were continuously picked up, and the number of chips that did not crack or pick up incorrectly (the number of successfully picked up chips) was 48 or more and 50 or less.
B: 50 chips were continuously picked up, and the number of chips in which chip cracking or pickup errors did not occur (the number of successful pickups) was 45 or more and less than 48.
C: 50 chips were continuously picked up, and the number of chips in which chip cracking or pickup errors did not occur (number of successfully picked up chips) was less than 45.

6. Evaluation Results Regarding each evaluation result for the dicing tapes 10 and dicing die-bonding films 20 (DDF(a)-DDF(ww)) produced in Examples 1-32 and Comparative Examples 1-17, the dicing tapes 10 and the dicing die-bonding films 20 were evaluated. Tables 1 to 9 show the composition and the composition of the base film 1 used.

As shown in Tables 1 to 6, the adhesive layer 2 containing the base films 1 (a) to (n) and the adhesive compositions 2 (a) to 2 (n) that satisfy the requirements of the present invention is provided. The dicing die-bonding films 20 (DDF(a) to DDF(ff)) of Examples 1 to 32 produced using the dicing tape 10 prepared using the dicing tape 10 obtained in this manner exhibited stealth dicing properties and pick-up properties when subjected to the manufacturing process of semiconductor devices. It was confirmed that favorable results were obtained in any evaluation. Moreover, the evaluation of heat resistance was also good.

When the examples are compared in detail, the dicing die bond films 20 of Examples 2 to 4, Examples 7 and 8, Examples 10 to 14, Examples 20, 22, 23, and Examples 30 to 32 are subjected to stealth dicing. It was found that both the evaluation of the durability and the pick-up property are compatible at a high level and are particularly excellent. As is clear from the evaluation results of the dicing die-bonding films 20 of Examples 3 to 6, it was found that the higher the content of the polyamide resin (B) in the base film 1, the better the heat resistance.

For the dicing die-bonding films 20 of Examples 1 and 9, the stress at 5% elongation at −15° C. in the TD direction of the base film 1 is slightly small at 15.8 MPa and 16.0 MPa, respectively. The splittability of No. 3 was slightly inferior. In addition, the expandability of the dicing tape 10 was slightly inferior. Further, for the dicing die-bonding film 20 of Example 16, the equivalent ratio (NCO/OH ) is 0.02, which is the lower limit of the range, so the cohesive force of the pressure-sensitive adhesive layer 2 is slightly reduced, and the die-bonding film 3 is slightly inferior in splittability. In addition, the low-angle adhesive strength after UV irradiation was slightly high, and the pick-up property was slightly inferior. Further, similarly for the dicing die bond film 20 of Example 26, since the equivalent ratio (NCO/OH) in the adhesive composition is slightly small, the cohesive force of the adhesive layer 2 is slightly small, and the die bond film 3 is broken. was slightly inferior. In addition, since the active energy ray-reactive carbon-carbon double bond concentration of the pressure-sensitive adhesive composition is 0.85 mmol/g, which is the lower limit of the range, the low-angle adhesive strength after UV irradiation is slightly large. Combined with the influence of the weight-average molecular weight Mw of the adhesive polymer, the die-bonding film 3 was slightly lifted, and the pick-up property was slightly inferior.

Further, for the dicing die-bonding films 20 of Examples 5 and 6, the mass ratio (A):(B) of the ionomer resin (A) and the polyamide resin (B) in the entire base film 1 was Since the content ratio of the polyamide resin (B) was slightly high, 74:26 and 72:28, the low angle adhesive strength after UV irradiation was slightly high due to the rigidity of the base film 1, and the pick-up property was slightly inferior. In addition, for the dicing die bond film 20 of Example 17, the residual hydroxyl group concentration after the cross-linking reaction in the adhesive composition is the upper limit value of the range of 0.90 mmol / g, so UV for the die bond film 3 at -30 ° C. The pre-irradiation pressure-sensitive adhesive layer 2 had a slightly high shear adhesive strength and a slightly inferior pick-up property. Further, for the dicing die bond film 20 of Example 18, the active energy ray-reactive carbon-carbon double bond concentration of the pressure-sensitive adhesive composition is 0.85 mmol / g, which is the lower limit of the range, so after UV irradiation The low-angle adhesive strength was slightly large, and the pick-up property was slightly inferior. Furthermore, with regard to the dicing die-bonding film 20 of Example 21, while the glass transition temperature of the main chain of the acrylic adhesive polymer in the adhesive composition was slightly high, acrylic acid, which is a copolymerization component of the acrylic adhesive polymer, It is presumed that butyl (BA) has a strong interaction with the die bond film 3, but although the die bond film 3 does not float, shearing of the adhesive layer 2 before UV irradiation with respect to the die bond film 3 at -30 ° C. The adhesive strength was slightly high, the low-angle adhesive strength after UV irradiation was also slightly high, and the pick-up property was slightly inferior.

Further, for the dicing die-bonding films 20 of Examples 15 and 19, the equivalent ratio of the isocyanate group (NCO) possessed by the polyisocyanate-based cross-linking agent in the adhesive composition to the hydroxyl group (OH) possessed by the acrylic adhesive polymer Since (NCO/OH) is 0.20, which is the upper limit of the range, the adhesive layer 2 is slightly hard, and the shear adhesive strength of the adhesive layer 2 before UV irradiation to the die-bonding film at -30 ° C. is slightly small, and the die-bonding A slight floating of the film 3 was observed. As a result, the pick-up property of the dicing die-bonding film 20 of Example 15 was slightly inferior. Furthermore, with regard to the dicing die-bonding film 20 of Example 19, although the die-bonding film 3 was slightly lifted, the active energy ray-reactive carbon-carbon double bond concentration of the pressure-sensitive adhesive composition was 1.51 mmol/g. As a result, the pick-up property barely secured A level (the number of successful pick-ups was 48). Further, for the dicing die bond film 20 of Example 24, the residual hydroxyl group concentration after the cross-linking reaction in the adhesive composition is the lower limit value of the range of 0.18 mmol / g, so that the die bond film 3 at -30 ° C. The shear adhesive strength of the pressure-sensitive adhesive layer 2 before UV irradiation was slightly low, and the die-bonding film 3 was slightly lifted, resulting in slightly inferior pick-up properties. Furthermore, in the dicing die-bonding film 20 of Example 25, since the weight average molecular weight Mw of the acrylic adhesive polymer is slightly large, the shear adhesive strength of the pre-UV irradiation adhesive layer 2 to the die-bonding film at -30°C is slightly small. , the die-bonding film 3 was slightly lifted, and due to this effect, the pick-up property was slightly inferior. Further, with respect to the dicing die bond film 20 of Example 27, since the glass transition temperature of the base polymer of the acrylic adhesive polymer in the adhesive composition is slightly high, the adhesive layer 2 before UV irradiation for the die bond film at -30 ° C. The shear adhesive strength of the die-bonding film 3 was slightly low, and the die-bonding film 3 was slightly lifted, resulting in a slightly inferior pick-up property. Furthermore, with regard to the dicing die bond film 20 of Example 28, since the thickness of the adhesive layer 2 is slightly thin, the shear adhesive strength of the adhesive layer 2 before UV irradiation to the die bond film 3 at -30 ° C. is slightly small, and the die bond Film 3 slightly floated, and due to this effect, pick-up properties were slightly inferior. Furthermore, with regard to the dicing die bond film 20 of Example 29, the thickness of the adhesive layer 2 is slightly thick, so the expandability of the dicing tape 10 is slightly inferior, and the low angle adhesive force after UV irradiation is also slightly large. The pickup performance was slightly inferior.

On the other hand, as shown in Table 7, it contained a base film 1 (o) that did not meet the requirements of the present invention, and PSA compositions 2 (o) to 2 (t) that did not meet the requirements of the present invention. The dicing die-bonding films 20 (DDF(gg) to DDF(ll)) of Comparative Examples 1 to 6 produced using the dicing tape 10 having the pressure-sensitive adhesive layer 2 all had insufficient heat resistance. It was confirmed that the results were inferior to those of the dicing die-bonding films 20 (DDF(a) to DDF(ff)) of Examples 1 to 32 in the evaluation of any of the four dicing properties and the evaluation of pick-up properties. Similarly, as shown in Table 9, the adhesive containing base films 1 (r) and 1 (s) that do not satisfy the requirements of the present invention, and the adhesive composition 2 (o) that does not satisfy the requirements of the present invention The dicing die-bonding films 20 (DDF(vv), DDF(ww)) of Comparative Examples 16 and 17 produced using the dicing tape 10 provided with the agent layer 2 also have insufficient heat resistance and stealth dicing property of 4 It was confirmed that the evaluation of any of the items and the evaluation of pick-up properties were inferior to the dicing die-bonding films 20 (DDF(a)-DDF(ff)) of Examples 1-32.

Further, as shown in Table 8, the base film 1 (b) that satisfies the requirements of the present invention is used, but the adhesive compositions 2 (o) to (t) that do not satisfy the requirements of the present invention are contained. For the dicing die-bonding films 20 (DDF (mm) to DDF (rr)) of Comparative Examples 7 to 12 produced using the dicing tape 10 having the adhesive layer 2, heat resistance, cutting property of the semiconductor wafer 30, The die bond film 3 had good splittability and the dicing tape 10 had good expandability. It was confirmed that the results were inferior to those of DDF(a) to DDF(ff)).

Further, as shown in Table 9, the adhesive layer 2 containing the adhesive composition 2 (a) that satisfies the requirements of the present invention is used, but the base film 1 (o) that does not satisfy the requirements of the present invention ) to (q) for the dicing die-bonding films 20 (DDF(ss) to DDF(uu)) of Comparative Examples 13 to 15 prepared using the dicing tape 10 having the adhesive layer containing and stealth dicing property evaluation, and pick-up property evaluation, it was confirmed that the results were inferior to those of the dicing die bond films 20 (DDF (a) to DDF (ff)) of Examples 1 to 32. rice field.

Specifically, Comparative Example 1 using the base film 1(o) which does not contain the polyamide resin (B) and is composed only of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer. The dicing die-bonding films 20 of ∼ 6 and Comparative Example 13 all have insufficient heat resistance, and the stress at -15 ° C. of the base film 1 at 5% elongation in the TD direction is as small as 12.5 MPa. , is lower than 15.5 MPa, which is the lower limit of the range, so that the die-bonding film 3 and the dicing tape 10 are significantly inferior in the splitting property and the expandability of the dicing tape 10. Further, for the dicing die-bonding films 20 of Comparative Examples 1 and 4, the equivalent ratio (NCO/OH) in the pressure-sensitive adhesive composition was 0.47 and 0.33, respectively, and the upper limit of the range was 0.20. Therefore, the pressure-sensitive adhesive layer 2 becomes hard, and the shear adhesive strength of the pressure-sensitive adhesive layer 2 before UV irradiation to the die bond film 3 at -30 ° C. is small, and the die bond film 3 is seen to float. was significantly inferior. On the other hand, for the dicing die-bonding film 20 of Comparative Example 3, the equivalent ratio (NCO/OH) in the adhesive composition is below 0.01, which is the lower limit of the range of 0.02, so the aggregation of the adhesive layer 2 The force was reduced, the low-angle adhesive strength after UV irradiation was large, and the pick-up property was significantly inferior. Furthermore, with respect to the dicing die bond film 20 of Comparative Example 2, the residual hydroxyl group concentration after the cross-linking reaction in the adhesive composition exceeds the upper limit of the range of 1.21 mmol / g. Since the active energy ray-reactive carbon-carbon double bond concentration was 0.80 mmol/g, which was lower than the lower limit of the range, the low-angle adhesive strength after UV irradiation increased, and the pick-up property was significantly inferior. Furthermore, with respect to the dicing die bond film 20 of Comparative Example 5, the residual hydroxyl group concentration after the crosslinking reaction in the adhesive composition exceeds the upper limit of the range of 0.95 mmol / g, so the active energy ray of the adhesive composition The reactive carbon-carbon double bond concentration is 0.58 mmol / g, which is significantly below the lower limit of the range. The low-angle adhesive strength after irradiation increased, and the pick-up property was significantly inferior. Regarding the dicing die bond film 20 of Comparative Example 6, the glass transition temperature of the main chain of the acrylic adhesive polymer in the adhesive composition exceeds the upper limit of the range of 40 ° C., so the adhesive layer 2 becomes hard and -30 The shear adhesive strength of the pressure-sensitive adhesive layer 2 before UV irradiation to the die-bonding film 3 at °C was small, and the die-bonding film 3 was observed to float, resulting in significantly inferior pick-up properties.

In addition, for the dicing die-bonding films 20 of Comparative Examples 7-12 each having the pressure-sensitive adhesive layer 2 containing the same pressure-sensitive adhesive composition as that of Comparative Examples 1-6, the evaluation results of the die-bonding film 3 floating and pick-up properties are the same as above. were equivalent.

Further, Comparative Example 13, which is outside the scope of the present invention, in which the base film 1 does not contain the polyamide resin (B) and is composed only of the resin (A) composed of the ionomer of the ethylene/unsaturated carboxylic acid copolymer. , and the mass ratio (A):(B) of the ionomer resin (A) and the polyamide resin (B) in the entire base film 1 is 97:3, and the content ratio of the polyamide resin (B) is small. The dicing die bond film 20 of Comparative Example 14, which is outside the range of, has insufficient heat resistance, and the stress at -15 ° C. of the base film 1 at 5% elongation in the TD direction is 12.5 MPa, respectively. Since it is as small as 15.0 MPa and does not reach the lower limit of 15.5 MPa, the die-bonding film 3 has insufficient splittability and the dicing tape 10 has insufficient expandability, resulting in significantly inferior pick-up performance. Furthermore, the mass ratio (A):(B) of the ionomer resin (A) and the polyamide resin (B) in the entire base film 1 is 70:30, which is a large content ratio of the polyamide resin (B). Regarding the dicing die bond film 20 of Comparative Example 15, which is outside the scope of the invention, the heat resistance was good, but due to the rigidity of the base film 1, the low angle adhesive strength after UV irradiation increased, resulting in poor pick-up performance. was significantly inferior.

In addition, for the dicing die bond film 20 (DDF (vv)) of Comparative Example 16 exemplified as a conventional dicing die bond film, the base film 1 having a three-layer structure of PP/EVA/PP was stretched 5% at -15 ° C. is 10.8 MPa in the MD direction and 10.3 MPa in the TD direction, which is extremely small and does not reach the lower limit of 15.5 MPa. In addition, since the equivalent ratio (NCO/OH) in the adhesive composition exceeds 0.20, which is the upper limit of the range, which is 0.47, the adhesive layer 2 becomes hard, and -30 ° C. The shear adhesive strength of the pressure-sensitive adhesive layer 2 before UV irradiation to the die-bonding film 3 in No. 1 was small, and the die-bonding film 3 was observed to float. As a result, the pick-up property was significantly inferior. Further, with respect to the dicing die bond film 20 (DDF (ww)) of Comparative Example 16, which is exemplified as a conventional dicing die bond film, the stress at -15 ° C. of the base film 1 having a PVC single layer structure at 5% elongation is 45.6 MPa in the MD direction and 42.8 MPa in the TD direction, which is extremely large and exceeds the upper limit of the range of 28.5 MPa, so the dicing tape 10 has insufficient expandability. Equivalent ratio (NCO/OH) is 0.47 and exceeds 0.20, which is the upper limit of the range, so the adhesive layer 2 becomes hard, and the adhesive before UV irradiation for the die bond film 3 at -30 ° C. The shear adhesive strength of layer 2 was small, and die-bonding film 3 was observed to float, resulting in significantly poor pick-up performance.

1... base film,
2 ... Adhesive layer,
3, 3a1, 3a2... die bond film (adhesive layer, adhesive film),
4: a support substrate for mounting a semiconductor chip,
5... External connection terminal,
6 terminals,
7 wire,
8 ... sealing material,
9 ... supporting member,
10... dicing tape,
11... OPP film substrate single-sided adhesive tape (backing tape),
12... Paper double-sided adhesive tape (fixing tape),
13... flat plate cross stage,
14 PET film substrate single-sided adhesive tape (backing tape, fixing tape),
15... SUS plate,
20... Dicing die bond film,
W, 30... semiconductor wafer,
30a, 30a1, 30a2 ... semiconductor chips,
30b ... modified region,
31... Semiconductor wafer central part 32... Semiconductor wafer left part 33... Semiconductor wafer right part 34... Semiconductor wafer upper part 35... Semiconductor wafer lower part 40... Ring frame (wafer ring),
41 ... holder,
50... Adsorption collet,
60... push-up pin (needle)
70, 80 semiconductor device

Claims (4)

A dicing tape comprising a base film and a pressure-sensitive adhesive layer containing an active energy ray-curable pressure-sensitive adhesive composition on the base film,
(1) The base film contains a resin (A) made of an ethylene/unsaturated carboxylic acid copolymer ionomer and a polyamide resin (B),
Consists of a resin composition in which the mass ratio (A):(B) of the resin (A) and the resin (B) in the entire substrate film is in the range of 72:28 to 95:5,
The stress at 5% elongation at -15 ° C. stretched the base film in either the MD direction (flow direction during film formation of the base film) or the TD direction (perpendicular to the MD direction). Even in the case, the range is 15.5 MPa or more and 28.5 MPa or less,
(2) The active energy ray-curable adhesive composition comprises an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a poly that undergoes a cross-linking reaction with the hydroxyl group. containing an isocyanate cross-linking agent,
The acrylic adhesive polymer has a main chain glass transition temperature (Tg) of −65° C. or more and −50° C. or less, and a hydroxyl value of 12.0 mgKOH/g or more and 55.0 mgKOH/g or less. ,
In the active energy ray-curable adhesive composition,
The equivalent ratio (NCO/OH) between the isocyanate group (NCO) of the polyisocyanate-based cross-linking agent and the hydroxyl group (OH) of the acrylic adhesive polymer is in the range of 0.02 or more and 0.20 or less,
The residual hydroxyl group concentration after the crosslinking reaction is in the range of 0.18 mmol or more and 0.90 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition,
The active energy ray-reactive carbon-carbon double bond concentration is in the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.
A dicing tape characterized by: 2. The dicing tape according to claim 1, wherein the active energy ray-reactive carbon-carbon double bond concentration is in the range of 1.02 mmol or more and 1.51 mmol or less per 1 g of the active energy ray-curable adhesive composition. 3. The dicing tape according to claim 1, wherein the acrylic adhesive polymer has a weight average molecular weight Mw of 200,000 or more and 600,000 or less. The dicing tape according to any one of claims 1 to 3, wherein the acrylic adhesive polymer has an acid value in the range of 0 mgKOH/g to 9.0 mgKOH/g .