JP2023132842A - Dicing tape, and method for manufacturing semiconductor device using dicing tape - Google Patents

Abstract

To provide a dicing tape and a dicing bond film which are excellent in cutting properties and pickup properties, in a semiconductor manufacturing process.SOLUTION: A dicing tape 10 is composed of: a base material film 1 having an average value of Young's modulus in an MD direction and an elastic modulus in 5% elongation in a TD direction at 0°C of 165-260 MPa; and an adhesive layer 2 which contains 2.4-7.0 pts.mass of a polyisocyanate crosslinking agent with respect to 100 pts.mass of an acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond and a hydroxyl value of 12.0-40.5 mgKOH/g, has an equivalent ratio (-NCO/-OH) of the isocyanate group contained in the polyisocyanate-based crosslinking agent to the hydroxyl group contained in the acrylic adhesive polymer of 0.14-1.32, adhesive force to a stainless steel plate at 23°C after irradiation with ultraviolet light in the presence of oxygen of 3.50 N/25 mm or less, and adhesive force thereto after irradiation with ultraviolet light in the absence of oxygen of 0.25-0.70 N/25 mm.SELECTED DRAWING: Figure 2

Description

The present invention relates to a dicing tape and a dicing die bond film that can be used in a semiconductor device manufacturing process, and a method for manufacturing a semiconductor device using the dicing tape.

In the manufacture of semiconductor devices, dicing tapes and dicing die bond films in which the dicing tapes and die bond films are integrated are used.

Dicing tape has a form in which an adhesive layer is provided on a base film, and is used to fix and hold semiconductor chips separated into individual pieces by dicing during dicing of semiconductor wafers so that they do not scatter. The individualized semiconductor chips are then peeled off from the adhesive layer of the dicing tape and fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip via a separately prepared adhesive or adhesive film. be done.

A dicing die bond film is a film in which a die bond film (hereinafter sometimes referred to as an "adhesive film" or "adhesive layer") is removably provided on an adhesive layer of a dicing tape. In the manufacture of semiconductor devices, a dicing die-bonding film is used to obtain individual semiconductor chips with dicing die-bonding films by placing and adhering semiconductor wafers, which may or may not be diced, onto the die-bonding film. The semiconductor chip with the die-bond film is then peeled off (picked up) from the adhesive layer of the dicing tape together with the die-bond film by pushing it up from the bottom side of the dicing tape using a push-up jig (for example, a push-up pin). It is then fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip.

The above-mentioned dicing die-bonding film is preferably used from the viewpoint of improving productivity, but in recent years, as a method for obtaining semiconductor chips with a die-bonding film using the dicing die-bonding film, a conventional full-cut cutting method using a dicing blade rotating at high speed has been used. As an alternative to this method, a method called SDBG (Stealth Dicing Before Griding) has been proposed as a method that can suppress chipping when thinning semiconductor wafers are diced into chips.

In this method, first, a semiconductor wafer is attached to a backgrind tape, and a laser beam is irradiated into the inside of the semiconductor wafer along the line scheduled for dicing of the semiconductor wafer. A modified region is selectively formed at a predetermined depth from the surface of the wafer, and then back grinding is performed to a predetermined thickness while adjusting the grinding amount appropriately, and the grinding load of the grinding wheel is applied to the back grind tape. to separate into multiple semiconductor chips. After that, the plurality of individualized semiconductor chips on the backgrind tape are pasted on a dicing die bond film, transferred from the backgrind tape to the dicing die bond film, and diced at low temperature (for example, -30°C to 0°C). By expanding the tape (hereinafter sometimes referred to as "cool expansion"), the die bond film, which has become brittle at low temperatures, is cut according to the shape of each semiconductor chip. Finally, it is peeled off from the adhesive layer of the dicing tape by a pickup to obtain a semiconductor chip with a die bond film.

In the above pick-up process, after cutting the semiconductor wafer with the die-bond film, the dicing tape is expanded at around room temperature (hereinafter sometimes referred to as "room-temperature expansion") to separate the adjacent semiconductor chips with the die-bond film. Heat shrink (hereinafter referred to as "kerf width") is used to remove slack in the circumferential portion of the dicing tape outside the semiconductor chip holding area that occurs when the expanded state is released after expanding the interval (hereinafter sometimes referred to as "kerf width"). After maintaining the above-mentioned kerf width by applying tension to the dicing tape (sometimes referred to as "heat shrinking"), the cut semiconductor chips with the die-bonding film are bonded to the adhesive of the dicing tape. It can be peeled off from the layer and picked up.

Patent Document 1 discloses that the adhesive layer contains an acrylic polymer, the acrylic polymer contains a C9 to C11 alkyl (meth)acrylate structural unit and a hydroxyl group-containing (meth)acrylate structural unit, and the C9 to C11 alkyl ( Dicing tapes containing 40 mol% to 85 mol% of meth)acrylate constitutional units are disclosed. The dicing tape of Patent Document 1 weakens the polarity of the acrylic polymer by using C9 to C11 alkyl (meth)acrylate, suppresses the affinity of the adhesive layer to the die bond film, and allows the dicing tape to be removed even with a small push-up amount in the pickup process. The die-bonding film can be peeled off well.

Japanese Patent Application Publication No. 2020-194879

By the way, in recent years, as semiconductor wafers have become thinner, chip cracking has become more likely to occur during wire bonding in the multi-stage stacking process of semiconductor chips.As a countermeasure to this problem, a wire-embedded die bond film that also has a spacer function has been developed. Proposed. Wire-embedded die bond films require wires to be embedded without gaps during die bonding, and are thicker and less fluid than conventional general-purpose die bond films for fixing semiconductor chips to lead frames and wiring boards. Because such wire-embedded die-bond films tend to have high properties (low melt viscosity at high temperatures), when such wire-embedded die-bond films are laminated onto conventional dicing tape and used in the manufacture of semiconductor chips, wire-embedded die-bond films tend to have high However, the semiconductor chips may not be neatly cut along the size of the individualized semiconductor chips. As one of the countermeasures, we have applied a dicing tape that uses a base material that has higher tensile stress at low temperatures than conventional dicing tape, and cool-expanded the dicing tape to the die bond film that is in close contact with the dicing tape. One possible method is to apply sufficient cleaving force (external stress). However, this method has the following new problem.

That is, in the above-mentioned cool-expanding process, when the cutting force (external stress) is applied from the cool-expanded dicing tape to the die bond film that is in close contact with the dicing tape, the tensile stress of the dicing tape at low temperatures is insufficient. If so, the die bond film, even if it is the wire-embedded die bond film described above that is difficult to break, can be cut neatly along the size of the semiconductor chips that have been separated into pieces. However, on the other hand, in addition to the impact when the die-bond film is cut, stress in the direction away from the die-bond film due to the expansion immediately after the cut is concentrated in the dicing tape portion between the semiconductor chips, which increases the distance between the semiconductor chips. At the same time, in the die-bonding film corresponding to the size of the diced semiconductor chip, the edge portion (fourth circumferential portion) of the die-bonding film may partially peel off from the adhesive layer of the dicing tape. The more the wiring circuits preformed on the surface of the semiconductor chip become multi-layered, the more likely the semiconductor chip will warp due to the difference in thermal expansion coefficient between the wiring circuits and the material of the semiconductor chip. Partial peeling of the dicing tape from the adhesive layer tends to be facilitated.

When the adhesive layer of the dicing tape is composed of an active energy ray (e.g. ultraviolet ray) curable adhesive composition, the adhesive force of the adhesive layer is reduced before picking up the semiconductor chip with the die bond film from the dicing tape. For this purpose, the adhesive layer is cured by irradiation with ultraviolet rays. However, as mentioned above, if the edge part of the die bond film of a semiconductor chip with a die bond film is peeled off from the adhesive layer of the dicing tape, the adhesive layer in the peeled part comes into contact with oxygen in the air. Even when irradiated with ultraviolet rays, a reaction between the growing polymer radicals and oxygen occurs, stopping the growth of the polymerization chain, and inhibiting the polymerization of the active energy ray-curable adhesive composition. It may not harden. In such cases, the adhesive strength of the adhesive layer does not decrease sufficiently, so in the pick-up process, the semiconductor chip with the die-bonding film on the dicing tape is placed on the push-up jig, and the pick-up suction is applied from above. When the collet was brought into contact with and landed on the surface of the semiconductor chip, the edges of the die bond film of the semiconductor chip with die bond film, which had peeled off from the adhesive layer of the dicing tape, became adhesive layers that had not been sufficiently cured by ultraviolet irradiation. Even when the jig is pushed up from the bottom side of the dicing tape and the suction/lifting is performed using a suction collet, the semiconductor chip with the die bond film is strongly re-adhered to the extent that it cannot be easily peeled off from the adhesive layer 2. Chip pickup is inhibited.

On the other hand, it is possible to eliminate the above-mentioned partial peeling by strengthening the adhesive force of the adhesive layer to the die-bond film, but in this case, it is necessary to peel the die-bond film from the adhesive layer after UV irradiation during pickup. This is not a good idea because the force required for this increases and the pick-up performance tends to decrease.

In the above pickup process, when the die bond film of the semiconductor chip with die bond film is peeled off from the adhesive layer of the dicing tape after UV irradiation by pushing up the jig from the bottom side of the dicing tape, as the amount of pushing up of the jig increases, Peeling starts from the edge of the die-bond film, and then progresses from the edge to the center, but usually the force required to peel off the edge first, in other words, the force required to trigger the peeling. is the largest.

From this point of view, peeling of the edge portion of the die-bonding film already formed in the above-mentioned expanding process before the pick-up process may seem to be advantageous for the progress of peeling in the pick-up process. However, as mentioned above, due to the effect of curing failure due to oxygen damage peculiar to adhesive layers made of conventional active energy ray-curable adhesive compositions, dicing When a pick-up collet was brought into contact with and landed on the surface of the semiconductor chip with the die-bond film on the tape, the semiconductor chip with the die-bond film had peeled off from the adhesive layer of the dicing tape. If the edges of the die-bond film are not sufficiently cured by ultraviolet irradiation, the semiconductor chip with the die-bond film can be removed from the adhesive layer by pushing up a jig from the bottom side of the dicing tape and by suction/lifting with a suction collet. This is disadvantageous because it is strongly re-adhered to the extent that it cannot be easily peeled off.

Here, if the adhesive layer is made of an active energy ray-curable adhesive composition that is far less susceptible to oxygen damage than a conventional adhesive layer composed of an active energy ray-curable adhesive composition, If it is possible to find an adhesive layer that can be used in the expansion process before the pick-up process, if the edge part of the die-bond film of a semiconductor chip with a die-bond film is intentionally peeled from the adhesive layer, the effect of re-adhesion will be reduced. In other words, by pushing up the jig from the bottom side of the dicing tape and sucking and lifting it with a suction collet, the semiconductor chip with die bond film is re-adhered to a level where it can be easily peeled off from the adhesive layer 2 after UV irradiation. The force required for peeling off the edge portion of the cut die-bonding film can be reduced, and the force required to peel off the edge portion of the cut die-bonding film is smaller than that required in the past, and good pick-up performance may be obtained. However, at present, there are no dicing tapes that have an adhesive layer made of an active energy ray-curable adhesive composition that is less susceptible to polymerization inhibition by oxygen; There was room for consideration in the development of a dicing tape that would make it possible to take advantage of the peeling of the edge portion of the die-bonding film.

The present invention solves the above-mentioned conventional problems, and has the following objects: (1) The die-bond film is cut well by cool expansion, and the edge portions (four sides) of the cut die-bond film are (2) At the time of pick-up, the edge portion of the die bond film that has been peeled off from the adhesive layer becomes adhesive after irradiation with ultraviolet rays of the dicing tape. The phenomenon of re-adhering to the agent layer to the extent that it cannot be easily peeled off even by pushing up a jig from the underside of the dicing tape or by suction/lifting with a suction collet is greatly suppressed, improving the pick-up performance of semiconductor chips with die-bonding films. Our objective is to provide excellent dicing tapes and dicing die bond films. Another object of the present invention is to provide a method for manufacturing a semiconductor device using the dicing tape.

The present invention
A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has an elastic modulus at 5% elongation Y _MD in the MD direction (flow direction during film formation of the base film) at 0°C, and an elastic modulus in the TD direction (direction perpendicular to the MD direction) at 0°C. When the elastic modulus at 5% elongation is Y _TD , the average value of the elastic modulus at 5% elongation (Y _MD + Y _TD )/2 has a value in the range of 165 MPa or more and 260 MPa or less,
The active energy ray-curable adhesive composition comprises an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate crosslinker that undergoes a crosslinking reaction with the hydroxyl group. Contains an agent,
The acrylic adhesive polymer has a hydroxyl value in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g, and the polyisocyanate crosslinking agent is added to 2.0 parts by mass based on 100 parts by mass of the acrylic adhesive polymer. The equivalent ratio (-NCO/ -OH) is adjusted within the range of 0.14 or more and 1.32 or less,
The adhesive layer of the dicing tape has an adhesive strength A after irradiation with ultraviolet light under aerobic conditions to a stainless steel plate (SUS304/BA plate) at 23° C. (integrated amount of ultraviolet light: 150 mJ/m ² , peeling angle: 90°, peeling speed: 300mm/min) is in the range of 3.50N/25mm or less, and the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment on a stainless steel plate (SUS304/BA plate) at 23°C (integrated amount of ultraviolet light: 150 mJ/m ² , peeling angle: 90°, peeling speed: 300 mm/min) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less.

In one embodiment, the base film is composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA). It is a resin film.

In one embodiment, the active energy ray-curable pressure-sensitive adhesive composition includes at least an α-aminoalkylphenone photoinitiator (a), an α-aminoalkylphenone photoinitiator, and an α-aminoalkylphenone photoinitiator as the photoinitiator. Contains three types of photopolymerization initiators: an alkylphenone photopolymerization initiator (b) and an acylphosphine oxide photopolymerization initiator (c).

In one embodiment, the α-aminoalkylphenone photopolymerization initiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photopolymerization initiator The content of each of the polymerization initiators (c) is 0.8 parts by mass or more and 5.0 parts by mass of the α-aminoalkylphenone photopolymerization initiator (a) based on 100 parts by mass of the acrylic adhesive polymer. 0.2 parts or more and 5.0 parts or less of an alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and acylphosphine oxide light The polymerization initiator (c) is in a range of 0.2 parts by mass or more and 2.0 parts by mass or less.

In one embodiment, the ratio A/B of the adhesive strength A after irradiation with UV rays under oxygen to the adhesive strength B after irradiated with UV rays under anaerobic conditions is in the range of 3.00 or more and 5.00 or less.

In one embodiment, the dicing tape is a sheet-like laminate in which a die bond film and a plurality of individualized semiconductor chips are sequentially laminated on the adhesive layer at -30°C to 0°C. It is used to expand (stretch) the die bond film at a temperature and cut the die bond film according to the shape of the individualized semiconductor chips.

In one embodiment, the dicing tape is formed by expanding the dicing tape to which the sheet-like laminate is attached at a temperature in a range of -30°C or more and 0°C or less, and forming the semiconductor into individual pieces. When the die-bonding film is cut to match the shape of the chip, the edge portions (fourth periphery portions) of the die-bonding film are peeled off from the adhesive layer.

In one embodiment, the die bond film cut to fit the shape of the individualized semiconductor chip has an area ratio of an edge portion (four peripheral portions) of the die bond film peeled from the adhesive layer. The area is in the range of 10% or more and 45% or less with respect to the entire area of the cut die-bonding film.

The present invention also provides a dicing die bond film, in which a die bond film is removably provided on the adhesive layer of the dicing tape.

In one embodiment, the die-bonding film is characterized in that the resin component includes a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, and a phenol resin.

In one embodiment, the die bond film is a wire-embedded die bond film.

In one embodiment, the wire-embedded die-bonding film has a shear viscosity at 80° C. of from 200 Pa·s to 11,000 Pa·s.

The present invention also provides a method for manufacturing a semiconductor device using the dicing tape.

According to the present invention, (1) the die-bond film is cut well by cool expansion, and the cut die-bond film is in a state where its edge portions (four peripheral portions) are peeled off from the adhesive layer of the dicing tape. (2) At the time of pick-up, the edge portion of the die-bonding film that has been peeled off from the adhesive layer is applied to the adhesive layer of the dicing tape after being irradiated with ultraviolet rays by pushing up a jig from the bottom side of the dicing tape and A dicing tape with excellent pick-up properties is provided, in which the phenomenon of re-sticking so strongly that it cannot be easily peeled off even by suction and lifting with a suction collet is greatly suppressed. Further, a method for manufacturing a semiconductor device using the dicing tape is provided.

1 is a cross-sectional view showing an example of the structure of a base film of a dicing tape to which this embodiment is applied. FIG. 1 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. 1 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film. FIG. 1 is a schematic diagram of an adhesive/film peeling analyzer of a flexible peeling angle type for measuring the adhesive force of a dicing tape, viewed from directly above. It is a flow chart explaining a manufacturing method of a dicing tape. It is a flowchart explaining the manufacturing method of a semiconductor chip. FIG. 2 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of a dicing die bond film, and a semiconductor wafer separated into pieces is attached to the center of the die bond film. (a) to (f) are cross sections showing an example of the process of grinding a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation and the process of bonding a plurality of cut semiconductor wafers to a dicing die bond film. It is a diagram. (a) to (f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a plurality of cut thin film semiconductor wafers to which dicing die-bonding films are bonded. FIG. 2 is an enlarged cross-sectional view showing an example of a state in which the edge portions (four peripheral portions) of the cut die-bonding film are partially peeled off from the adhesive layer of the dicing tape. FIG. 2 is an enlarged plan view of a state in which the edge portions (four peripheral portions) of the cut die-bonding film are partially peeled off from the adhesive layer of the dicing tape, as observed from the back side (base film side) of the semiconductor chip. 1 is a schematic cross-sectional view of one embodiment of a semiconductor device with a stacked structure using semiconductor chips manufactured using a dicing die bond film to which this embodiment is applied. FIG. 3 is a schematic cross-sectional view of another embodiment of a semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film to which this embodiment is applied.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments.

<Configuration of dicing tape and dicing die bond film>
FIGS. 1A to 1D are cross-sectional views showing an example of the structure of a base film 1 of a dicing tape to which this embodiment is applied. The base film 1 of the dicing tape of this embodiment may be a single layer of a single resin composition (see (a) 1-A in FIG. 1), or may be composed of multiple layers of the same resin composition. It may be a laminate (see (b) 1-B in FIG. 1), or a laminate consisting of multiple layers of different resin compositions (see (c) 1-C and (d) 1-D in FIG. 1). ). In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

FIG. 2 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a configuration in which an adhesive layer 2 is provided on the first surface of a base film 1. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having releasability. You can leave it there. The base film 1 has an elastic modulus at 5% elongation of Y MD in the MD direction (the flow direction during film formation of the base film) at 0°C, and an elastic modulus of Y _MD in the TD direction (direction perpendicular to the MD direction) at 0°C. When the elastic modulus at 5% elongation is Y _TD , the resin film is composed of a resin film having an average value (Y _MD +Y _TD )/2 of each elastic modulus at 5% elongation in a range of 165 MPa or more and 260 MPa or less. The adhesive forming the adhesive layer 2 is, for example, an active energy ray-curable acrylic adhesive that hardens and shrinks when irradiated with active energy rays such as ultraviolet rays (UV), reducing its adhesion to the adherend. Adhesives etc. are used.

The dicing tape 10 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. A plurality of pieces are formed on the adhesive layer 2 of the dicing tape 10 by back-grinding a semiconductor wafer on which dividing grooves are formed on the surface using a blade or a semiconductor wafer on which a modified layer is formed inside using a laser. The diced semiconductor chips are pasted and held (temporarily fixed) via a die bond film (adhesive layer), and the die bond film is cut into pieces according to the shape of each chip by cool expansion. The kerf width between the semiconductor chips is sufficiently expanded through room temperature expansion and heat shrinking steps, and each semiconductor chip with a die bond film is peeled off from the adhesive layer 2 of the dicing tape 10 through a pick-up step. The obtained semiconductor chip with a die-bonding film is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip.

FIG. 3 is a cross-sectional view showing an example of a so-called dicing die bond film, which is a structure in which the dicing tape 10 to which this embodiment is applied is bonded and integrated with a die bond film (adhesive film) 3. As shown in FIG. 3, the dicing die bond film 20 has a structure in which a die bond film (adhesive film) 3 is releasably adhered and laminated on the adhesive layer 2 of the dicing tape 10.

The dicing die bond film 20 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. On the die bond film 3 of the dicing die bond film 20, a plurality of wafers are obtained by back-grinding a semiconductor wafer on which dividing grooves are formed on the surface with a blade or a semiconductor wafer on which a modified layer is formed inside with a laser. The diced semiconductor chips are pasted and held (glued), and the die bond film 3, which has been made brittle at low temperatures by cool expansion, is cut according to the shape of the individual diced semiconductor chips, and the die bond film 3 is cut into pieces according to the shape of each chip. to obtain a semiconductor chip. Next, after the kerf width between the die-bonding film-attached semiconductor chips is sufficiently expanded by room-temperature expansion and heat-shrinking steps, the individual die-bonding film-attached semiconductor chips are peeled off from the adhesive layer 2 of the dicing tape 10 by a pickup step. The obtained semiconductor chip with the die bond film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die bond film (adhesive film) 3. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die-bonding film 3 (the surface facing the adhesive layer 2) The opposite surface) may be provided with a base sheet (release liner) having releasability, and may be peeled off as appropriate during use.

<Dicing tape>
(Base film)
The base film 1, which is the first component of the dicing tape 10 of the present invention, will be explained below.

[Elastic modulus of base film at 5% elongation at 0°C]
The above-mentioned base film 1 has an elastic modulus at 5% elongation in the MD direction (flow direction during film formation of the base film) at 0°C as Y _MD and in the TD direction (direction perpendicular to the MD direction) at 0°C. The resin film has an average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation of 165 MPa or more and 260 MPa or less, where Y _TD is the elastic modulus at 5% elongation. The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is preferably in the range of 190 MPa or more and 240 MPa or less.

If the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is less than 165 MPa, even if the dicing tape 10 is expanded, the difference in the direction away from the cut die bond film Since stress is less likely to act on the cut die-bonding film, there is a risk that the cut die-bonding film will not be partially peeled from the adhesive layer 2 of the dicing tape 10 at its edge portions (four peripheral portions). Furthermore, at low temperatures, even if external stress is applied to the dicing tape 10 by expanding, it will not be sufficiently transmitted to the die bond film 3, so especially when using a wire-embedded die bond film, there is a risk that the die bond film 3 will not be cut properly during the cool expansion process. There is. Furthermore, if the value of (Y _MD + Y _TD )/2 is too small, the dicing tape 10 may become soft and difficult to handle, or a sufficient kerf width may not be secured. As a result, the effect of improving the pick-up property is not seen or the pick-up property is lowered compared to the conventional method.

On the other hand, if the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 exceeds 260 MPa, it may be difficult to expand the dicing tape 10. Even if it were possible to expand, the die bond film 3 would peel off excessively from the adhesive layer 2 during expansion, and sufficient external stress would be applied to the die bond film 3 through the adhesive layer 2 almost uniformly over the entire die bond film 3. There is a risk that the die-bonding film 3 may not be cut cleanly, that a sufficient kerf width may not be secured, or that the kerf width may vary. In addition, in the pick-up process, when the excessively peeled die-bonding film re-adheres to the adhesive layer 2, the re-adhesive area becomes excessively large. Even if the dicing tape 10 is made of a strong adhesive composition, in order to peel it off by pushing up the dicing tape 10 from the lower surface side with a jig, there is a risk that a large amount of energy will be required depending on the large re-adhesion area. As a result, the pick-up performance of the semiconductor chip with the die-bonding film deteriorates.

Since the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is in the range of 165 MPa or more and 260 MPa or less, the dicing tape 10 can be used in the cool expand process as described below. A sufficient external stress can be applied to the die-bonding film 3 to break the die-bonding film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition, and the dicing tape 10 Apply stress in the direction away from the die bond film 3 to the adhesive layer 2 necessary to intentionally form an appropriate peeling state between the edge portion of the cut die bond film and the adhesive layer 2. be able to. In addition, in this case, since the stress applied to the die bond film 3 and the adhesive layer 2 is moderately suppressed, the cut die bond film does not peel off excessively from the adhesive layer 2, and the kerf width is sufficiently It is also possible to avoid damage caused by collision between semiconductor chips and displacement from a fixed position on the adhesive layer 2. In this case, if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, the pick-up properties of the semiconductor chip with the die-bonding film can be made better than before. can.

The elastic modulus Y _MD at 5% elongation in the MD direction and the elastic modulus Y _TD at 5% elongation in the TD direction at 0° C. of the base film 1 in the present invention are measured by the following method. Specifically, first, a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was used as a sample for MD direction measurement (number of samples N = 5), and a sample for TD direction measurement (number of samples N = 5). N=5), and test pieces each having a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared. Next, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were fixed with chucks so that the initial distance between the chucks was 20 mm, and the test piece was After being placed at 0° C. for 1 minute in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Co., Ltd., a tensile test was performed at a speed of 100 mm/min to obtain a tensile load-elongation curve. Then, from the obtained tensile load-extension curve, the origin (extension start point) and the tensile load value ( Calculate the slope of the straight line connecting the points in unit: N, and use the following formula.

Elastic modulus Y at 5% elongation (unit: MPa) = (inclination) x [(initial distance between chucks) / (cross-sectional area of test piece)]

From this, the elastic modulus Y at 5% elongation of the base film 1 is determined.
Measurement is performed with the number of samples N=5 in each direction, and the average value is defined as the elastic modulus at 5% elongation _YMD in the MD direction and the elastic modulus at 5% elongation _YTD in the TD direction. The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 in the present invention is a value calculated using each of the above values.

[Resin composition constituting the base film]
As long as the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is within the above range, Although not particularly limited, from the viewpoint of achieving both expandability and heat shrinkability, a resin composition containing a thermoplastic crosslinked resin is preferable. Specifically, the resin composition contains, for example, a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer (hereinafter sometimes simply referred to as "ionomer"). Examples include resin compositions containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer, and a polyamide resin (PA). A resin film formed using these resin compositions can be suitably used as the base film 1. Among these resin compositions, the dicing tape 10 using the above-mentioned base film needs to be particularly compatible with the application of a wire-embedded die-bonding film. A thermoplastic crosslinked resin (IO) and a polyamide resin (PA) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer (hereinafter sometimes simply referred to as "ionomer") that make it possible to provide the dicing tape 10 A resin composition containing the following is suitable.

The total amount of the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1 is as follows: As long as the average value of the elastic modulus at 5% elongation (Y _MD + Y _TD )/2 is within the above range, it is not particularly limited, but 65 mass with respect to the total amount of the resin composition constituting the entire base film 1. % or more and 100% by mass or less. More preferably 75% by mass or more and 100% by mass or less, particularly preferably 85% by mass or more and 100% by mass or less.

The dicing tape 10 using the base film 1 having such a structure has the die bond film 3 adhered to the adhesive layer 2 and is stretched at low temperature to give the die bond film 3 an appropriate breaking force ( Since it is possible to apply external stress), it is suitable for use in the cool expansion process of the manufacturing process of semiconductor devices, and furthermore in the room temperature expansion process. That is, the cool expansion process is suitable for properly cleaving the die-bonding film 3 according to the shape of each individual semiconductor chip that has already been diced, and obtaining individual die-bonding film-attached semiconductor chips of a predetermined size with a high yield. . By cool expanding the dicing tape 10 that continues immediately after the die bond film 3 is cut, it is possible to apply appropriate stress to the adhesive layer 2 of the dicing tape 10 in a direction away from each cut die bond film. Therefore, in each cut die-bonding film, it is possible to moderately and intentionally form a state in which the edge portion (four peripheral portions) is partially peeled off from the adhesive layer 2 of the dicing tape 10. suitable. Furthermore, even in the room temperature expansion process, the expandability necessary to ensure a sufficient kerf width between semiconductor chips is maintained.

[Resin composition containing thermoplastic crosslinked resin (IO) consisting of ionomer of ethylene/unsaturated carboxylic acid copolymer and polyamide resin (PA)]
As described above, the base film 1 in the present invention is a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA). A preferred embodiment is a resin film composed of: The thermoplastic crosslinked resin (IO) and polyamide resin (PA) made of the ionomer of these ethylene/unsaturated carboxylic acid copolymers will be explained below.

[Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid copolymer]
In the base film 1 of this embodiment, the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer is a part of the carboxyl group of the ethylene/unsaturated carboxylic acid copolymer. , or a resin completely neutralized (crosslinked) with metals (ions). In the following description, the "thermoplastic crosslinked resin made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer" may be referred to as a "resin made of an ionomer" or simply "ionomer."

The ethylene/unsaturated carboxylic acid copolymer constituting the ionomer is at least a binary copolymer of ethylene and an unsaturated carboxylic acid, and a triple copolymer of a third copolymer component. It may be a multicomponent copolymer of more than the original. The ethylene/unsaturated carboxylic acid copolymer may be used alone, or two or more ethylene/unsaturated carboxylic acid copolymers may be used in combination.

Examples of the unsaturated carboxylic acids constituting the ethylene/unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic anhydride, Examples include unsaturated carboxylic acids having 4 to 8 carbon atoms such as maleic acid. In particular, acrylic acid or methacrylic acid is preferred.

When the ethylene/unsaturated carboxylic acid copolymer is a ternary or higher copolymer, in addition to the ethylene and unsaturated carboxylic acid constituting the binary copolymer, there is also a third component that forms the multicomponent copolymer. It may also contain a copolymer component of 3. The third copolymerization component includes unsaturated carboxylic acid esters (for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate). , (meth)acrylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl moiety such as dimethyl maleate and diethyl maleate), unsaturated hydrocarbons (e.g. propylene, butene, 1,3-butadiene, pentene, 1, 3-pentadiene, 1-hexene, etc.), vinyl esters (e.g., vinyl acetate, vinyl propionate, etc.), oxides such as vinyl sulfuric acid and vinyl nitric acid, halogen compounds (e.g., vinyl chloride, vinyl fluoride, etc.), vinyl groups Examples include primary and secondary amine compounds, carbon monoxide, sulfur dioxide, etc., and unsaturated carboxylic acid esters are preferable as these copolymerization components.

The form of the above-mentioned ethylene/unsaturated carboxylic acid copolymer may be a block copolymer, random copolymer, or graft copolymer, and may be a binary copolymer or a ternary copolymer. But that's fine. Among these, preferred are binary random copolymers, ternary random copolymers, graft copolymers of binary random copolymers, and graft copolymers of ternary random copolymers because they are industrially available. , a binary random copolymer, or a ternary random copolymer are more preferred, and from the viewpoint of expandability, a ternary random copolymer that is less likely to neck during expansion is particularly preferred.

Specific examples of the above-mentioned ethylene/unsaturated carboxylic acid copolymers include binary copolymers such as ethylene/acrylic acid copolymers, ethylene/methacrylic acid copolymers, and ethylene/methacrylic acid/2-methyl acrylate. - Terpolymer copolymers such as propyl copolymers can be mentioned. Furthermore, commercially available ethylene/unsaturated carboxylic acid copolymers may be used; for example, the Nucrel series (registered trademark) manufactured by DuPont Mitsui Polychemicals Co., Ltd. can be used.

The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the above-mentioned ethylene/unsaturated carboxylic acid copolymer is preferably in the range of 1% by mass or more and 20% by mass or less. , and from the viewpoint of heat resistance (blocking, fusion), it is more preferably in the range of 5% by mass or more and 15% by mass or less.

In the base film 1 of the present embodiment, the ionomer used as the resin (IO) has carboxyl groups contained in the ethylene/unsaturated carboxylic acid copolymer crosslinked (neutralized) with metal ions at an arbitrary ratio. Preferably. Examples of metal ions used to neutralize acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, magnesium ions, sodium ions, and zinc ions are preferred, and sodium ions and zinc ions are more preferred from the viewpoint of easy availability of industrialized products.

The degree of neutralization of the ethylene/unsaturated carboxylic acid copolymer in the above ionomer is preferably in the range of 20 mol% or more and 85 mol% or less, and preferably in the range of 50 mol% or more and 82% mol% or less. More preferably, it is in the range of 65 mol% or more and 80 mol% or less. By setting the degree of neutralization to 20 mol% or more, the breakability of the die bond film 3 can be further improved, and the heat shrinkability of the dicing tape 10 in the heat shrink process described below can also be improved. By controlling the content to 85 mol% or less, the film formability of the film can be improved. Note that the degree of neutralization is the blending ratio (mol %) of metal ions to the number of moles of acid groups, particularly carboxyl groups, possessed by the ethylene/unsaturated carboxylic acid copolymer.

The resin (IO) made of the above ionomer has a melting point of about 85 to 100°C, but the melt flow rate (MFR) of the resin (IO) made of the ionomer is 0.2 g/10 minutes or more and 20.0 g/10 min. It is preferably in the range of 10 minutes or less, more preferably in the range of 0.5 g/10 minutes or more and 20.0 g/10 minutes or less, and in the range of 0.5 g/10 minutes or more and 18.0 g/10 minutes or less. It is more preferable that When the melt flow rate is within the above range, the film formability as the base film 1 will be good. Note that MFR is a value measured at 190° C. and a load of 2160 g by a method based on JIS K7210-1999.

The resin composition constituting the base film 1 of this embodiment may contain a polyamide resin (PA) in addition to the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer described above. preferable. The mass ratio (IO):(PA) of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) shall be in the range of 72:28 to 95:5. is preferred. By configuring the base film 1 with the resin composition mixed so as to have the above mass ratio, the average value of the elastic modulus at 5% elongation at 0°C of the base film 1 (Y _MD + Y _TD )/2 It becomes easy to adjust to the above range. The mass ratio (IO):(PA) is more preferably in the range of 74:26 to 92:8, even more preferably in the range of 80:20 to 90:10. The upper and lower limits of the numerical ranges in this specification can be arbitrarily selected and combined.

[Polyamide resin (PA)]
Examples of the polyamide resin (PA) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, and ethylenediamine, tetramethylenediamine, and pentamethylene. Diamines, polycondensates with diamines such as hexamethylene diamine, decamethylene diamine, 1,4-cyclohexyl diamine, m-xylylene diamine, cyclic lactam ring-opening polymers such as ε-caprolactam and ω-laurolactam, 6- Examples include polycondensates of aminocarboxylic acids such as aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, and 12-aminododecanoic acid, or copolymers of the above-mentioned cyclic lactams, dicarboxylic acids, and diamines.

A commercially available product can also be used as the polyamide resin (PA). Specifically, nylon 4 (melting point 268°C), nylon 6 (melting point 225°C), nylon 46 (melting point 240°C), nylon 66 (melting point 265°C), nylon 610 (melting point 222°C), nylon 612 (melting point 215°C). ), nylon 6T (melting point 260°C), nylon 11 (melting point 185°C), nylon 12 (melting point 175°C), copolymer nylon (e.g. nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point: 237° C.), nylon 46, etc. Among these polyamides, nylon 6 and nylon 6/12 are preferred from the viewpoint of film formability and mechanical properties as the base film 1.

As described above, the content of the polyamide resin (PA) is determined by the weight of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1. The ratio (IO):(PA) is preferably in the range of 72:28 to 95:5. When the mass ratio of the polyamide resin (PA) is less than the above range, especially when the degree of neutralization by metal ions of the ionomer of the ethylene/unsaturated carboxylic acid copolymer is low, the base film 1 (dicing tape 10) The effect of increasing the Young's modulus at low temperatures is insufficient, and even if stretched at low temperatures, it is not possible to apply an appropriate cleaving force (external stress) to the die-bond film 3, so the die-bond film 3 cannot be cut cleanly. There is a risk. In addition, even if the base film 1 (dicing tape 10) is expanded, stress in the direction away from the cut die-bond film is difficult to act on, so that the edges (fourth peripheral parts) of the cut die-bond film are There is a possibility that the state in which the dicing tape 10 is partially peeled from the adhesive layer 2 may not be formed.

On the other hand, if the mass ratio of the polyamide resin (PA) exceeds the above range, stable film formation may be difficult depending on the resin composition of the base film 1. Further, the elastic modulus of the base film 1 at 5% elongation at low temperature increases excessively, and there is a possibility that expanding the dicing tape 10 becomes difficult. Furthermore, even if it were possible to expand, the die bond film 3 would peel off excessively from the adhesive layer 2 during expansion, making it difficult to apply sufficient external stress to the die bond film 3 through the adhesive layer 2. There is a risk that the die-bonding film 3 may not be cut cleanly, that a sufficient kerf width may not be secured, or that the kerf width may vary. Furthermore, the flexibility of the base film 1 may be impaired, and the expandability of the dicing tape 10 during the room temperature expansion process may not be maintained, and when picking up a semiconductor chip with a die-bonding film, there may be pickup failures due to cracks in the semiconductor chip, etc. There is a possibility that this may occur. The content of the polyamide resin (PA) is determined by the mass ratio (IO) of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1. :(PA) is more preferably in the range of 74:26 to 92:8, and even more preferably in the range of 80:20 to 90:10.

In addition, when the base film 1 is a laminate consisting of multiple layers, the mass ratio of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) is as follows: Calculated from the mass ratio of the resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in each layer, and the mass ratio of each layer in the entire base film 1 (laminate). means the value for the entire base film 1 (laminate).

If the mass ratio of the resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1 is within the above range, the temperature of the base film 1 at 0°C It becomes easy to adjust the average value (Y _MD +Y _TD )/2 of the elastic modulus at 5% elongation in the range of 165 MPa or more and 260 MPa or less. As a result, the dicing tape 10 has sufficient external strength to break the die bond film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition, which will be described later, in the cool expand process. It is possible to apply stress to the die-bonding film 3, and to form an appropriate peeling state between the edge portion of the cut die-bonding film and the adhesive layer 2 of the dicing tape 10. A necessary stress in the direction away from the die-bonding film 3 can be applied. In addition, in this case, the stress applied to the die bond film 3 and the adhesive layer 2 is moderately suppressed, so the cut die bond film does not peel off excessively from the adhesive layer 2, and the kerf width is sufficiently It is also possible to avoid damage caused by collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2. In this case, if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, the pick-up property of the semiconductor chip with the die-bonding film will be improved compared to the conventional method. can be taken as a thing.

〔others〕
Other resins and various additives may be added to the resin composition constituting the base film 1 as necessary, as long as the effects of the present invention are not impaired. Examples of the other resins include polyolefins such as polyethylene and polypropylene, ethylene/unsaturated carboxylic acid copolymers, and polyether esteramides. Such other resins may be used in a proportion of, for example, 20 parts by mass based on a total of 100 parts by mass of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA). Can be blended. In addition, examples of the above-mentioned additives include antistatic agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, antiblocking agents, antifungal agents, antibacterial agents, flame retardants, Examples include flame retardant aids, crosslinking agents, crosslinking aids, foaming agents, foaming aids, inorganic fillers, and fiber reinforcing materials. Such various additives may be added at a ratio of, for example, 5 parts by mass to a total of 100 parts by mass of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA). Can be blended.

[Thickness of base film]
The thickness of the base film 1 is not particularly limited, but considering its use as the dicing tape 10, it is preferably in the range of, for example, 70 μm or more and 120 μm or less. More preferably, it is in the range of 70 μm or more and 110 μm or less. If the thickness of the base film 1 is less than 70 μm, there is a risk that the ring frame (wafer ring) may not be held sufficiently when the dicing tape 10 is subjected to a dicing process. Furthermore, if the thickness of the base film 1 is greater than 120 μm, there is a risk that the base film 1 will warp more due to release of residual stress during film formation.

[Layer structure of base film]
The layer structure of the base film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate consisting of multiple layers of the same resin composition, or a laminate consisting of multiple layers of the same resin composition, or It may be a laminate consisting of multiple layers of resin compositions. In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

When the base film 1 is a laminate consisting of a plurality of layers, for example, it may have a structure in which a plurality of layers formed using the resin composition of the present embodiment are laminated; A layer formed using the resin composition of this embodiment may be laminated with a layer formed using a resin composition other than the resin composition of this embodiment.

Layers formed using other resin compositions include, for example, linear low density polyethylene (LLDPE), low density polyethylene (LDPE), ethylene-α olefin copolymer, polypropylene, ethylene/unsaturated carbon Acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid Alkyl ester/carbon monoxide copolymers or unsaturated carboxylic acid graft products thereof, a single substance or a blend of any plurality thereof, ionomers (IO) of the above ethylene/unsaturated carboxylic acid copolymers, etc. Examples include a layer formed using a resin composition. Among these, from the viewpoint of adhesion and versatility with the resin layer made of a mixture of a resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA), , ethylene/unsaturated carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer and ionomer of these copolymers, ethylene -α-olefin copolymers and the like are preferred.

Examples of the case where the base film 1 of this embodiment has a laminated structure include base films having the following two-layer structure, three-layer structure, and the like.

For example, as a two-layer structure,
(1) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer consisting of a mixture of a resin (IO1) consisting of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA1)],
(2) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer made of a mixture of a resin (IO2) made of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA2)],
(3) [First resin layer made of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer]/[made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment a second resin layer made of a mixture of resin (IO1) and polyamide resin (PA1)],
(4) [Resin first resin layer made of ethylene/unsaturated carboxylic acid copolymer]/[Resin (IO1) made of ionomer of ethylene/unsaturated carboxylic acid copolymer of this embodiment and polyamide resin A second resin layer consisting of a mixture of (PA1)],
A two-layer structure ([first resin layer]/[second resin layer]) consisting of the same resin layer or different resin layers may be mentioned.

For example, the three-layer structure is as follows:
(5) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer made of a mixture of a resin (IO1) made of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA1)]/[Ethylene-unsaturated carboxylic acid copolymer of this embodiment] a third resin layer made of a mixture of a resin made of an ionomer (IO1) and a polyamide resin (PA1)],
(6) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer made of a mixture of a resin (IO2) made of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA2)]/[Ethylene-unsaturated carboxylic acid copolymer of this embodiment] a third resin layer made of a mixture of a resin made of an ionomer (IO1) and a polyamide resin (PA1)],
(7) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[ethylene/unsaturated carboxylic acid [Second resin layer made of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of this embodiment]/[Resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1) a third resin layer consisting of a mixture of],
(8) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[ethylene/unsaturated carboxylic acid [Second resin layer made of an ionomer of the ethylene/unsaturated carboxylic acid copolymer of this embodiment]/[Third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1) ],
(9) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene-α olefin copolymer Second resin layer consisting of a combination]/[Third resin layer consisting of a mixture of a resin (IO1) consisting of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)],
A three-layer structure ([first resin layer]/[second resin layer]/[third resin layer]) consisting of the same resin layer or different resin layers may be mentioned.

[Method for forming base film]
As a method for forming the base film 1 of this embodiment, a conventional method can be adopted. A resin composition obtained by melting and kneading ionomer resin (IO) and polyamide resin (PA), with other components added as necessary, can be processed, for example, by T-die casting, T-die nip molding, inflation molding, or extrusion lamination. It may be processed into a film by various molding methods such as molding method and calendar molding method. In addition, when the base film 1 is a laminate consisting of multiple layers, each layer is formed separately by a method such as a calendar molding method, an extrusion method, or an inflation molding method, and then they are thermally laminated or bonded with an adhesive as appropriate. A laminate can be manufactured by laminating the materials by the following method. Examples of the adhesive include a single substance or a blend of any plurality of the above-mentioned ethylene copolymers or unsaturated carboxylic acid grafts thereof. Alternatively, a laminate can also be manufactured by simultaneously extruding the resin compositions of each layer by a coextrusion lamination method. Note that the surface of the base film 1 that is in contact with the adhesive layer 2 may be subjected to corona treatment, plasma treatment, or the like for the purpose of improving adhesion to the adhesive layer 2, which will be described later. In addition, the surface of the base film 1 opposite to the side in contact with the adhesive layer 2 is coated with a shibo roll for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation. An embossing process or the like may be performed.

(Adhesive layer)
The adhesive layer 2 containing the active energy ray-curable adhesive composition, which is the second component of the dicing tape 10 of the present invention, will be described below.

As described above, the adhesive layer 2 includes an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate crosslinking agent that crosslinks with the hydroxyl group. An active energy ray-curable adhesive composition containing: In the active energy ray-curable adhesive composition, 2 parts of a polyisocyanate crosslinking agent is added to 100 parts by mass of an acrylic adhesive polymer having a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. The equivalent ratio (-NCO) of the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer is included in the range of .4 parts by mass or more and 7.0 parts by mass. /-OH) is adjusted within the range of 0.14 or more and 1.32 or less. The adhesive layer 2 of the dicing tape 10 has an adhesive force A of 3.50 N/25 mm or less after irradiation with ultraviolet rays under aerobic conditions to a stainless steel plate (SUS304/BA plate) at 23° C. and 0.25 N/25 mm. It has an adhesive force B after irradiation with ultraviolet rays in the absence of oxygen to a stainless steel plate (SUS304/BA plate) in the range of 0.70 N/25 mm or less.

[Acrylic adhesive polymer]
The acrylic adhesive polymer contained as a main component in the active energy ray-curable adhesive composition is an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, and has an active energy ray-curable adhesive composition of 12.0 mgKOH/g. It has a hydroxyl value in the range of 40.5 mgKOH/g. The acrylic adhesive polymer preferably accounts for 90% by mass or more and 100% by mass or less, and 95% by mass or more and 100% by mass or less of the total mass of the active energy ray-curable adhesive composition. It is more preferable.

The above-mentioned active energy ray-reactive acrylic adhesive polymer having a carbon-carbon double bond and a hydroxyl group is usually made of a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer as a base polymer, although the details will be described later. A copolymer (adhesive acrylic polymer having hydroxyl groups) is obtained by copolymerizing with, and the copolymer has an isocyanate group and a carbon-carbon double bond that can undergo an addition reaction with the hydroxyl group. It is obtained by an addition reaction of a compound (active energy ray-reactive compound).

As mentioned above, the main chain (main skeleton) of the acrylic adhesive polymer having a hydroxyl group is a copolymer containing at least an alkyl (meth)acrylate monomer and a hydroxyl group-containing monomer as a copolymer component. Composed of polymers. The glass transition temperature (Tg) of the main chain of the hydroxyl group-containing acrylic adhesive polymer is not particularly limited, but is preferably in the range of -65°C or more and -45°C or less. Here, the glass transition temperature (Tg) is a theoretical value calculated from the Fox formula shown in the following general formula (1) based on the composition of the monomer components constituting the acrylic adhesive polymer. be.

1/Tg=W ₁ /Tg ₁ +W ₂ /Tg ₂ +...+W _n /Tg _n General formula (1)

[In the above general formula (1), Tg is the glass transition temperature (unit: K) of the acrylic adhesive polymer, and Tg _i (i=1, 2,...n) is the homopolymer of monomer i. It is the glass transition temperature (unit: K) at the time of formation, and W _i (i=1, 2, . . . n) represents the mass fraction of monomer i in all monomer components. ]

The glass transition temperature (Tg) of a homopolymer can be found, for example, in "Polymer Handbook" (edited by J. Brandrup and E.H. Immergut, Interscience Publishers).

If the glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer (copolymer) having hydroxyl groups is less than -65°C, especially if the amount of the crosslinking agent described below is small, the copolymer When the adhesive layer 2 containing the dicing tape 10 becomes excessively soft and is cool-expanded, the cut die-bonding film may be partially peeled off from the adhesive layer 2 of the dicing tape 10 at its edges (around the four sides). There is a possibility that the state that has occurred may not be formed. Furthermore, in the pick-up process after irradiation with ultraviolet rays, there is a risk that the semiconductor chip with the die-bonding film will be difficult to peel off from the adhesive layer 2, and that adhesive residue (contamination) may occur on the surface of the die-bonding film 3. As a result, the yield of non-defective semiconductor chips with die-bonding films decreases.

On the other hand, if the glass transition temperature (Tg) exceeds -45°C, especially if the amount of the crosslinking agent (described later) is large, the adhesive layer 2 containing these will become excessively hard, resulting in poor wettability to the die-bonding film 3. - Since the followability deteriorates and the initial adhesion to the die bond film 3 deteriorates, the die bond film 3 is excessively peeled off from the adhesive layer 2 in the cool expand process, and the die bond film 3 is not bonded to the die bond film 3 through the adhesive layer 2. There is a possibility that the die-bonding film 3 cannot be cut cleanly because sufficient external stress cannot be applied, or that a sufficient kerf width cannot be secured, or that the kerf width may vary. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. The glass transition temperature (Tg) is preferably in the range of -63°C to -51°C, more preferably in the range of -61°C to -54°C.

Examples of the (meth)acrylic acid alkyl ester monomer include hexyl (meth)acrylate having 6 to 18 carbon atoms, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, Nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl ( meth)acrylate, hexadecyl(meth)acrylate, heptadecyl(meth)acrylate, octadecyl(meth)acrylate, or monomers having 5 or less carbon atoms, pentyl(meth)acrylate, n-butyl(meth)acrylate, isobutyl( Examples include meth)acrylate, ethyl(meth)acrylate, methyl(meth)acrylate, and the like. Among these, it is preferable to use 2-ethylhexyl acrylate, which accounts for 40% by mass or more and 85% by mass based on the total amount of monomer components constituting the main chain of the acrylic adhesive polymer (copolymer) having hydroxyl groups. It is preferable to include it in the following range.

In addition, examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, and 8-hydroxypropyl (meth)acrylate. Examples include hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate, and the like. The purpose of copolymerizing the above-mentioned hydroxyl group monomer is, firstly, to provide an addition reaction point for introducing active energy ray-reactive carbon-carbon double bonds, which will be described later, into the above-mentioned acrylic adhesive polymer by an addition reaction. (-OH), secondly, the acrylic adhesive polymer is made to have a high molecular weight by reacting the hydroxyl group with the isocyanate group (-NCO) of a polyisocyanate crosslinking agent described below, and then In order to provide crosslinking reaction points for imparting cohesive force and appropriate hardness to the adhesive layer 2 of When introducing the hydroxyl group monomer by addition reaction, the content of the hydroxyl group monomer is, for example, 16.4% by mass or more and 34.4% by mass based on the total amount of the copolymer monomer components. It is preferable to adjust it within the following range. That is, adjusting the content of the hydroxyl monomer in the above copolymer within the above range is necessary to reduce the hydroxyl value of the acrylic adhesive polymer and the below-mentioned requirements for the adhesive composition of the present invention. The equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer (-NCO/-OH) can be easily controlled within the above-mentioned predetermined range. Therefore, it is suitable.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is produced by copolymerizing the acrylic adhesive polymer having a hydroxyl group, and then the copolymer has a hydroxyl group in a side chain. It is easy to follow the reaction (stability of control) by adding a compound having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compound) that can be subjected to an addition reaction. It is the most suitable from the viewpoint of technical difficulty. Examples of such compounds having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compounds) include isocyanate compounds having a (meth)acryloyloxy group. Specific examples include 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, and the like.

The above addition reaction is preferably carried out in the presence of an organometallic catalyst to promote the reaction. As such an organometallic catalyst, it is preferable to use at least one selected from an organic compound containing zirconium, an organic compound containing titanium, and an organic compound containing tin. The amount of the organometallic catalyst is not particularly limited, but is preferably in the range of 0.01 parts by mass or more and 5 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer.

Further, in the above addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained. As such a polymerization inhibitor, a quinone-based polymerization inhibitor such as hydroquinone monomethyl ether is preferable. The amount of the polymerization inhibitor is not particularly limited, but it is usually preferably in the range of 0.01 parts by mass or more and 0.1 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer.

When carrying out the above addition reaction, the acrylic adhesive polymer is crosslinked with a polyisocyanate crosslinking agent added later to further increase the molecular weight and give the adhesive layer 2 a cohesive force and appropriate strength before irradiation with active energy rays. In order to impart a certain degree of hardness, it is necessary to ensure that a desired amount of hydroxyl groups remain in the adhesive composition, while at the same time keeping the active energy ray-reactive carbon-carbon double bond concentration within the desired range. It also needs to be controlled. It is necessary to take both of these points into consideration. For example, when reacting an isocyanate compound having a (meth)acryloyloxy group with a copolymer having a hydroxyl group in its side chain, one guideline is to ) The isocyanate compound having an acryloyloxy group is preferably added to the hydroxyl group-containing monomer of the acrylic adhesive polymer in an amount ranging from 37 mol% to 84 mol%. .

In addition to the above-mentioned (meth)acrylic acid alkyl ester monomer and hydroxyl group-containing monomer, the above-mentioned acrylic adhesive polymer may contain other substances as necessary for the purpose of adjusting adhesive strength, glass transition temperature (Tg), etc. The copolymerized monomer components may be copolymerized. Examples of such other comonomer components include carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid, maleic anhydride, and anhydrous Acid anhydride group-containing monomers such as itaconic acid, (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol (meth)acrylamide, N-methylolpropane (meth)acrylamide, ) Acrylamide, amide monomers such as N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, ( Examples include monomers having a functional group, such as amino group-containing monomers such as t-butylaminoethyl meth)acrylate, and glycidyl group-containing monomers such as glycidyl (meth)acrylate. The content of the monomer having such a functional group is not particularly limited, but is preferably in the range of 0.5% by mass or more and 30% by mass or less based on the total amount of copolymerizable monomer components.

When such a monomer having a functional group other than a hydroxyl group is copolymerized, active energy ray-reactive carbon-carbon double bonds can be introduced into the acrylic adhesive polymer using the functional group. You can also do it. For example, when an acrylic adhesive polymer has a carboxyl group in its side chain, a method of reacting it with an active energy ray-reactive compound such as glycidyl (meth)acrylate or 2-(1-aziridinyl)ethyl (meth)acrylate, When the acrylic adhesive polymer has a glycidyl group in its side chain, active energy ray-reactive carbon-carbon dioxide can be added to the acrylic adhesive polymer by a method of reacting with an active energy-reactive compound such as (meth)acrylic acid. Double bonds can also be introduced. However, when copolymerizing a monomer with a functional group other than a hydroxyl group and using the functional group to introduce an active energy ray-reactive carbon-carbon double bond into an acrylic adhesive polymer, one guideline is As such, the content of the hydroxyl monomer copolymerized at the same time can be adjusted, for example, in the range of 2.5% by mass or more and 8.4% by mass or less based on the total amount of the copolymer monomer components. preferable. By doing so, the hydroxyl value of the acrylic adhesive polymer, the equivalent ratio (-NCO/ --OH) can be easily controlled within the above-mentioned predetermined range, which is preferable.

Furthermore, the acrylic adhesive polymer having the above-mentioned functional group may contain other comonomer components as necessary for the purpose of cohesive force, heat resistance, etc., within a range that does not impair the effects of the present invention. You may. Specifically, such other comonomer components include, for example, cyano group-containing monomers such as (meth)acrylonitrile, and olefin monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene. , styrene monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, and chloride. Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate, ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- Vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-( Examples include monomers having a nitrogen atom-containing ring such as meth)acryloylmorpholine. These other comonomer components may be used alone or in combination of two or more.

In this embodiment, a suitable copolymer having a hydroxyl group obtained by copolymerizing the above-mentioned monomers is specifically a binary copolymer of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate. , a terpolymer of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, a terpolymer of 2-ethylhexyl acrylate, n-butyl acrylate, and 2-hydroxyethyl acrylate, Ternary copolymer of 2-ethylhexyl acrylate, methyl methacrylate, and 2-hydroxyethyl acrylate, quaternary copolymer of 2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid Examples include polymers, quaternary copolymers of 2-ethylhexyl acrylate, methyl methacrylate, 2-hydroxyethyl acrylate, and methacrylic acid, but are not particularly limited thereto. Then, 2-methacryloyloxyethyl isocyanate is added to these suitable copolymers as an isocyanate compound having a (meth)acryloyloxy group to form an active energy ray-reactive carbon-carbon double bond and a hydroxyl group. Preferably, it is an acrylic adhesive polymer.

The acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups thus obtained has a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. When the above-mentioned hydroxyl value is less than 12.0 mgKOH/g, if the hydroxyl value is excessively small, crosslinking after addition of the polyisocyanate crosslinking agent will be insufficient, and the cohesive strength of the adhesive layer 2 before active energy ray irradiation will result. As a result, there is a risk that adhesive residue may be generated on the die bonding film 3 during pick-up, and there is a risk that adhesive residue may be generated on the ring frame when the dicing tape 10 is peeled off from the SUS ring frame after a series of steps are completed. In addition, since it is not possible to impart appropriate hardness to the adhesive layer 2 before irradiation with active energy rays, the dicing tape 10 There is a possibility that a state in which the adhesive layer 2 is partially peeled off may not be formed. As a result, the effect of improving the pick-up property is not seen or the pick-up property is lowered compared to the conventional method.

On the other hand, when the hydroxyl value exceeds 40.5 mgKOH/g, especially when the amount of polyisocyanate crosslinking agent added is small, the concentration of residual hydroxyl groups after the crosslinking reaction in the active energy ray-curable adhesive composition becomes excessively large. , there is a risk that the initial adhesion of the adhesive layer 2 to the die-bonding film 3 may become greater than necessary. In this case, when cool-expanding, there is a risk that the cut die bond film will not be partially peeled from the adhesive layer 2 of the dicing tape 10 at its edge portions (four peripheral portions), and In the pick-up process after irradiation with active energy rays, there is a possibility that the semiconductor chip with the die-bond film will be difficult to peel off from the adhesive layer 2 in the close contact area where the adhesive layer 2 and the die-bond film 3 did not peel off due to the expansion in the previous process. be. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. The hydroxyl value is preferably in the range of 12.5 mgKOH/g or more and 40.1 mgKOH/g or less, more preferably in the range of 12.7 mgKOH/g or more and 30.1 mgKOH/g or less.

When the hydroxyl value is in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g, the pressure-sensitive adhesive layer 2 can have cohesive strength and appropriate hardness in combination with the addition of a specific amount of polyisocyanate crosslinking agent, which will be described later. Since the adhesive layer 2 can be given strength and polarity, the initial adhesion of the adhesive layer 2 to the die-bonding film 3 can be appropriately maintained, while the adhesive force of the adhesive layer 2 can be reduced by irradiation with active energy rays. In the cool-expanding step, the cut edge portions of the die-bonding film 3 can be appropriately peeled from the adhesive layer 2 without hindering the process.

Further, the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups is not particularly limited, but preferably has an acid value in the range of 0 mgKOH/g to 9.0 mgKOH/g. . When the acid value is within the above range, the initial adhesion of the adhesive layer 2 to the die-bonding film 3 is appropriately maintained, while the effect of reducing the adhesive force of the adhesive layer 2 due to active energy ray irradiation is not hindered. In the cool expansion process, it becomes easy to form an appropriate peeling state from the adhesive layer 2 on the cut edge portions of the die-bonding film 3. The acid value is more preferably in the range of 2.0 mgKOH/g or more and 8.2 mgKOH/g or less, and even more preferably in the range of 2.5 mgKOH/g or more and 5.6 mgKOH/g or less.

Further, the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group preferably has a weight average molecular weight Mw in the range of 200,000 to 2,000,000. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography. When the weight average molecular weight Mw of the acrylic adhesive polymer is less than 200,000, taking into consideration coating properties, etc., an active energy ray-curable acrylic adhesive composition with a high viscosity of several thousand cP to tens of thousands of cP is used. It is difficult to obtain a solution of the substance, which is undesirable. In addition, the cohesive force of the adhesive layer 2 before active energy ray irradiation becomes small, and when the semiconductor chip with die bond film 3 attached is detached from the adhesive layer 2 after active energy ray irradiation, the die bond film of the semiconductor wafer with die bond film There is a risk of contaminating the surface. Further, when the dicing tape 10 is peeled off from the SUS ring frame after a series of steps are completed, there is a possibility that adhesive residue may be left on the ring frame.

On the other hand, when the weight average molecular weight Mw exceeds 2 million, it is difficult to mass-produce an active energy ray-curable acrylic adhesive polymer. It may gel, which is not preferable. In addition, if the amount of polyisocyanate crosslinking agent added is large, the wettability and followability of the adhesive layer 2 to the die bond film 3 before irradiation with active energy rays will decrease, and the initial adhesion will decrease, so in the cool expand process. , the die bond film 3 may peel off excessively from the adhesive layer 2, and sufficient external stress cannot be applied to the die bond film 3 via the adhesive layer 2, and the die bond film 3 may not be cut cleanly. , there is a risk that a sufficient kerf width cannot be secured or that the kerf width varies. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. The weight average molecular weight Mw is preferably in the range of 300,000 to 1,000,000.

[Crosslinking agent]
The active energy ray-curable adhesive composition of the present embodiment is produced by increasing the molecular weight of the above-mentioned acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group by crosslinking, and then irradiating it with active energy rays. In order to impart cohesive force and appropriate hardness to the previous adhesive layer 2, a polyisocyanate-based crosslinking agent is further contained. Examples of the polyisocyanate crosslinking agent include a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound obtained by reacting trimethylolpropane with hexamethylene diisocyanate, and an adduct obtained by reacting trimethylolpropane with tolylene diisocyanate. Examples include polyisocyanate compounds, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and isophorone diisocyanate. These can be used alone or in combination of two or more. Among these, from the viewpoint of versatility, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and tolylene diisocyanate and/or adduct polyisocyanate compounds obtained by reacting trimethylolpropane and hexamethylene diisocyanate are preferably used.

Adduct polyisocyanate compounds made by reacting trimethylolpropane and tolylene diisocyanate include Coronate L-45E, Coronate L-55E, and Coronate L (all trade names) manufactured by Tosoh Corporation and Takenate manufactured by Mitsui Chemicals Co., Ltd. Commercially available products such as D101E (trade name) can also be used. In addition, as adduct polyisocyanate compounds made by reacting trimethylolpropane and hexamethylene diisocyanate, commercially available products such as Coronate HL (trade name) manufactured by Tosoh Corporation and Takenate D160N (trade name) manufactured by Mitsui Chemicals, Inc. It can also be used.

The polyisocyanate crosslinking agent is an acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups and having a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. Contained in the range of 2.4 parts by mass or more and 7.0 parts by mass based on 100 parts by mass, the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer. The equivalent ratio (-NCO/-OH) is adjusted to be in the range of 0.14 or more and 1.32 or less.

When the above equivalent ratio (-NCO/-OH) is less than 0.14, especially when the hydroxyl value of the acrylic adhesive polymer is small, appropriate hardness is imparted to the adhesive layer 2 before irradiation with active energy rays. Therefore, when cool-expanding the die-bonding film, there is a risk that the cut die-bonding film may not be partially peeled from the adhesive layer 2 of the dicing tape 10 at its edge portions (four peripheral portions). . As a result, the effect of improving the pick-up property is not seen or the pick-up property is lowered compared to the conventional method.
In addition, especially if the hydroxyl value of the acrylic adhesive polymer is high, when cool-expanded, the cut die-bond film may have some parts from the adhesive layer 2 of the dicing tape 10 on its edge portions (surrounding portions on all sides). There is a risk that a peeled state will not be formed, and the concentration of residual hydroxyl groups after the crosslinking reaction in the active energy ray-curable adhesive composition will become excessively high, and the initial adhesion of the adhesive layer 2 to the die bond film 3 may be higher than necessary. There is a risk that it will become larger. As a result, in the pick-up process after active energy ray irradiation, the semiconductor chip with the die-bond film is difficult to peel off from the adhesive layer 2 in the close contact area where the adhesive layer 2 and the die-bond film 3 did not separate due to the expansion in the previous process. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases.

On the other hand, if the equivalent ratio (-NCO/-OH) exceeds 1.32, the adhesive layer 2 before irradiation with active energy rays becomes excessively hard, resulting in die bonding of the adhesive layer 2 before irradiation with active energy rays. Since the wettability and conformability to the film 3 are reduced and the initial adhesion is reduced, the die bond film 3 is excessively peeled off from the adhesive layer 2 in the cool expand process, and the adhesive layer 2 is not attached to the die bond film 3. There is a possibility that the die-bonding film 3 cannot be cut cleanly because sufficient external stress cannot be applied through the kerf, or that a sufficient kerf width cannot be secured, or that the kerf width may vary. In addition, as the rigidity of the adhesive layer 2 increases, the bending elastic modulus of the dicing tape 10 increases, and even when the dicing tape 10 is pushed up with a pushing up jig in the pick-up process, the curvature of the dicing tape 10 is small, and the die bond film There is a possibility that peeling of the four side edges of the attached semiconductor chip from the adhesive layer 2 will be difficult to promote. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. In addition, the adhesive force of the adhesive layer 2 to the SUS ring frame may be insufficient, and the dicing tape 10 may peel off from the SUS ring frame during expansion of the dicing tape 10, which may prevent the expansion process from being performed normally. There is.

In this way, the adhesive layer 2 containing the active energy ray-curable adhesive composition in which the added amount of the polyisocyanate crosslinking agent and the equivalent ratio (-NCO/-OH) have been adjusted has a In a low-temperature environment, hardness that can transmit a moderate impact to the interface between the edge portion of the die-bond film and the adhesive layer 2 immediately below it at the moment the die-bond film 3 is cut, and stress in the direction away from the die-bond film 3. In addition to having a cohesive force that can transmit the following, it can also have a suitable initial adhesion force to the die bond film 3. Therefore, by subjecting the dicing tape 10 in which the adhesive layer 2 is laminated to the base film 1 described above to the cool expand process, the die bond film 3 can be cut cleanly, and the die bond film 3 can be cut cleanly. , it is possible to appropriately and intentionally form a state in which the dicing tape 10 is partially peeled off from the adhesive layer 2 at its edge portions (four peripheral portions). The equivalent ratio (-NCO/-OH) is preferably in the range of 0.30 or more and 0.90 or less.

Here, the equivalent ratio (NCO/OH) between the isocyanate group (NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer in the active energy ray-curable adhesive composition is The total number of moles of isocyanate groups calculated from the content of the polyisocyanate crosslinking agent and the average number of isocyanate groups per molecule of the polyisocyanate crosslinking agent is This is a theoretically calculated value divided by the total number of moles of hydroxyl groups that the acrylic adhesive polymer has after bonding has been introduced. The total number of moles of hydroxyl groups is, for example, a base polymer containing (meth)acryloyloxy groups in order to introduce an active energy ray-reactive carbon-carbon double bond into an acrylic adhesive polymer having hydroxyl groups. When an addition reaction is carried out using an isocyanate compound, it is theoretically calculated from the total number of moles of hydroxyl groups in the acrylic adhesive polymer, which is the base polymer, that the isocyanate compound having an added (meth)acryloyloxy group undergoes a crosslinking reaction with the isocyanate group. It is the value obtained by subtracting the number of moles of hydroxyl groups consumed (=the number of moles of isocyanate groups of the isocyanate compound having a (meth)acryloyloxy group).

In addition, in the active energy ray curable adhesive composition in which the added amount of the polyisocyanate crosslinking agent and the above equivalent ratio (-NCO/-OH) are adjusted to the above range, the active energy ray curable adhesive composition The concentration of residual hydroxyl groups per 1 g after the crosslinking reaction is preferably in the range of 0 mmol or more and 0.60 mmol or less. More preferably, it is in the range of 0.02 mmol or more and 0.40 mmol or less. Here, the concentration of residual hydroxyl groups after crosslinking reaction per 1 g of active energy ray-curable adhesive composition refers to the total concentration of hydroxyl groups possessed by the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups. Active energy ray curing is calculated by subtracting the number of moles of hydroxyl groups theoretically consumed by the crosslinking reaction with the isocyanate groups of the added polyisocyanate crosslinking agent (= the number of moles of isocyanate groups of the crosslinking agent) from the number of moles. The value is calculated per 1 g of adhesive composition.

When the concentration of residual hydroxyl groups after the crosslinking reaction per 1 g of the active energy ray-curable adhesive composition is within the above range, the initial adhesive strength of the adhesive layer 2 to the die bond film 3 and the adhesive strength to the SUS ring frame can be made moderate. Therefore, by subjecting the dicing tape 10 in which the above-mentioned adhesive layer 2 is laminated to the above-mentioned base film 1 to a cool-expanding process, the dicing tape is applied to the edge portions (four periphery portions) of the cut die bond film. It becomes easy to appropriately and intentionally form a state in which the adhesive layer 2 of No. 10 is partially peeled off.

After forming the adhesive layer 2 with the active energy ray-curable adhesive composition, the aging conditions for reacting the polyisocyanate crosslinking agent with the hydroxyl group-containing acrylic adhesive polymer are particularly limited. However, for example, the temperature may be set as appropriate in the range of 23° C. or more and 80° C. or less, and the time may be set as appropriate in the range of 24 hours or more and 168 hours or less.

[Photopolymerization initiator]
The active energy ray-curable adhesive composition of this embodiment includes a photopolymerization initiator that generates radicals upon irradiation with active energy rays. The photopolymerization initiator senses the irradiation of active energy rays to the active energy ray curable acrylic adhesive composition, generates radicals, and activates the carbon-carbon double bond possessed by the active energy ray curable acrylic adhesive polymer. Initiate the bond cross-linking reaction.

The photopolymerization initiator is not particularly limited, and conventionally known ones can be used. Specifically, for example, an alkylphenone photopolymerization initiator, an acylphosphine oxide photopolymerization initiator, an oxime ester photopolymerization initiator, etc. can be used. Examples of alkylphenone photopolymerization initiators include α-hydroxyalkylphenone radical polymerization initiators, α-hydroxyacetophenone radical polymerization initiators, α-aminoalkylphenone radical polymerization initiators, and benzyl methyl ketal radical polymerization initiators. etc.

The above photopolymerization initiators may be used alone or in combination of two or more types as long as the effects of the present invention are achieved, but in the active energy ray-curable adhesive composition of this embodiment, these photopolymerization initiators Among the polymerization initiators, α-aminoalkylphenone photopolymerization is used as a photopolymerization initiator from the viewpoint of effectively reducing both the adhesive strength A after UV irradiation under oxygen conditions and the adhesive strength B after UV irradiation under anoxic conditions. Photopolymerization of at least three types of systems: an initiator (a), an alkylphenone photoinitiator other than an α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photoinitiator (c) Preferably, an initiator is included.

In the present invention, "adhesive strength A after irradiation with ultraviolet light under oxygen" refers to the adhesive strength A after peeling off the release liner of the dicing tape 10 and with the two sides of the adhesive layer exposed to the air (under oxygen). It refers to the adhesive strength measured when the two surfaces of the adhesive layer are directly irradiated with ultraviolet rays as energy rays and then attached to an adherend (SUS304/BA board). This is because when picking up a semiconductor chip with a die-bond film, "the part of the adhesive layer 2 where the die-bond film 3 that was broken during expansion is peeled off" is exposed to the air and is irradiated with ultraviolet rays. Therefore, the adhesion force of the dicing tape 10 to the die bond film 3 is calculated as follows: This is assumed based on a model, and represents the ease with which the re-fixed portion is peeled off during the pick-up process. The smaller the adhesive force value is, the weaker the re-fixing force is, and the easier it is to peel off the die-bonding film-attached semiconductor chip from the adhesive layer 2 of the dicing tape 10.

In addition, "adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment" means that the release liner of the dicing tape 10 is peeled off, the second side of the adhesive layer is attached to the adherend (SUS304/BA board), and the second side of the adhesive layer is It means the adhesive force measured after irradiating the adhesive layer 2 with ultraviolet rays as sexual energy rays through the base film 1 of the dicing tape 10 in a state where it is not exposed to the air (under oxygen-free conditions). This means that when picking up a semiconductor chip with a die-bond film, "the part of the adhesive layer 2 where the die-bond film 3 that was cut during expansion was in close contact without peeling off" is not exposed to the air. This model assumes the adhesive force of the dicing tape 10 to the die bond film 3 when the adhesive layer 2 is irradiated with ultraviolet rays without being exposed to the air. , which represents the ease with which the adhered portions other than the re-adhered portions are peeled off during the pick-up process. The smaller the value of the adhesive force, the easier it becomes to peel off the semiconductor chip with the die bond film from the adhesive layer 2 of the dicing tape 10. Details of these adhesive force measurement methods will be described later.

Specifically, the α-aminoalkylphenone photopolymerization initiator (a) is, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, manufactured by IGM Resins B.V.) or 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone (trade name: Omnirad 369, manufactured by IGM Resins B.V.), 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (trade name: Omnirad379EG, manufactured by IGM Resins B.V.), etc. can be mentioned. These may be used alone or in combination of two or more.

Among these, as the α-aminoalkylphenone photopolymerization initiator (a), 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone or 2-dimethylamino-2 -(4-Methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one is preferably used.

The α-aminoalkylphenone photopolymerization initiator (a) is particularly effective in reducing the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen conditions. However, on the other hand, the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in an oxygen-free environment tends to increase as the content of the photopolymerization initiator (a) increases. Used in combination with an alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator and an acylphosphine oxide photopolymerization initiator (c), which is effective in reducing adhesive strength B after irradiation with lower UV rays. It is preferable that the content of the photopolymerization initiator (a) is also kept within the range described below.

As the alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator, as mentioned above, α-hydroxyalkylphenone radical polymerization initiator, α-hydroxyacetophenone radical polymerization initiator and benzyl methyl ketal radical polymerization initiators. These may be used alone or in combination of two or more.

Specific examples of the α-hydroxyalkylphenone photopolymerization initiator include 1-hydroxycyclohexylphenyl ketone (trade name: Omnirad 184, manufactured by IGM Resins B.V.).

Specifically, the α-hydroxyacetophenone photopolymerization initiator includes, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad1173, manufactured by IGM Resins B.V.) , 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one (trade name: Omnirad2959, manufactured by IGM Resins B.V.), 2-hydroxy- Examples include 1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one (trade name: Omnirad127, manufactured by IGM Resins B.V.). .

Specifically, the benzyl methyl ketal photopolymerization initiator includes, for example, 2,2'-dimethoxy-1,2-diphenylethan-1-one (for example, Omnirad 651 (trade name), manufactured by IGM Resins B.V. ) etc.

Among these, examples of alkylphenone photopolymerization initiators (b) other than α-aminoalkylphenone photopolymerization initiators include 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-1-{4-[4-(2 -hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one or 2,2'-dimethoxy-1,2-diphenylethan-1-one is preferably used.

The alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator is particularly effective in reducing the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in the absence of oxygen. In addition, although the reduction effect of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions is inferior to that of the above α-aminoalkylphenone photopolymerization initiator (a), there is a certain level of reduction depending on the content. You can get the effect. Therefore, when used in combination with the above α-aminoalkylphenone photopolymerization initiator (a), the effect of reducing the adhesive strength after irradiation with ultraviolet rays under oxygen conditions can be further improved, while the adhesive strength after irradiation with ultraviolet rays under anaerobic conditions can be improved. It becomes easy to reduce the force B.

Specifically, the above acylphosphine oxide photopolymerization initiator (c) includes, for example, 2,4,-trimethylbenzoyl-diphenylphosphine oxide (trade name: OmniradTPO, manufactured by IGM Resins B.V.); Bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.), 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: OmniradTPO, (manufactured by IGM Resins B.V.), etc. These may be used alone or in combination of two or more.

Among these, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide is preferably used as the acylphosphine oxide photopolymerization initiator (c).

The above acylphosphine oxide photopolymerization initiator (c) has an absorption edge extending to a wavelength of 400 nm or more, so the curing speed is fast, especially after irradiation of the adhesive layer 2 with ultraviolet rays in the absence of oxygen. This is effective in further reducing the adhesive force B. In addition, although the reduction effect of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions is inferior to that of the above α-aminoalkylphenone photopolymerization initiator (a), it can be reduced to a certain degree depending on the content. You can get the effect. Therefore, by using the above α-aminoalkylphenone photopolymerization initiator (a) and an alkylphenone photopolymerization initiator other than the above α-aminoalkylphenone photopolymerization initiator (b), it is possible to It becomes easy to further improve the effect of reducing the adhesive force B after irradiation with ultraviolet rays in an oxygen-free environment while further improving the effect of reducing the adhesive force A after irradiation in an auxiliary manner.

The above α-aminoalkylphenone photoinitiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photoinitiator (c) Specific examples of suitable photoinitiator combinations include at least three types of photoinitiators:
(1) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 1-hydroxycyclohexyl phenyl ketone/photopolymerization initiator (c): three types of combinations of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
(2) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one/Photoinitiator (c): Bis( A combination of three types of 2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
(3) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 1-hydroxycyclohexyl phenyl ketone and 2,2'-dimethoxy-1,2-diphenylethan-1-one/photoinitiator (c): bis(2,4,6-trimethylbenzoyl)-phenyl A combination of four types of phosphine oxide,
(4) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 1-hydroxycyclohexyl phenyl ketone and 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one/photopolymerization initiation Agent (c): a combination of four types of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
(5) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 2-hydroxy-1-{4-[4-2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one and 2,2'-dimethoxy-1,2- Diphenylethan-1-one/photopolymerization initiator (c): four types of combinations of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
etc.

As described above, the active energy ray-curable adhesive composition of the present embodiment includes an α-aminoalkylphenone photopolymerization initiator (a) and an alkylphenone type other than the α-aminoalkylphenone photopolymerization initiator. It is preferable to include at least three types of photopolymerization initiators, a photopolymerization initiator (b) and an acylphosphine oxide photopolymerization initiator (c); in this case, each photopolymerization initiator is (1) When the adhesive layer 2 is irradiated with ultraviolet rays in an oxygen-free condition, the acrylic having an active energy ray-reactive carbon-carbon double bond contained in the adhesive composition Not only does the curing of the adhesive polymer proceed sufficiently within a predetermined period of time, but also (2) even when the adhesive layer 2 is irradiated with ultraviolet rays in an aerobic environment, there is no effect of oxygen inhibition. Significantly suppresses the decrease in curing speed caused by oxidation, and allows the curing of the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds contained in the adhesive composition to a desired level within a predetermined time. This makes it easier. As a result, (1) the bonding surface of the die-bonding film (adhesive layer) 3 in the adhesive layer 2 (the surface that remains in close contact with no peeling even after the expanding process), when irradiated with ultraviolet rays, It becomes easy to give the adhesive layer 2 an adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment within a desired range, which will be described later. Furthermore, (2) the peeled portions of the cut die-bonding film 3 in the adhesive layer 2 formed by the expanding process will be removed when irradiated with ultraviolet rays, as seen in the conventional dicing tape 10. , because the polymerization of the acrylic adhesive polymer with active energy ray-reactive carbon-carbon double bonds is inhibited by oxygen contained in the surrounding air, the adhesive strength does not decrease sufficiently and remains at a high value. It becomes easy to give the adhesive layer 2 a desired range of adhesive strength A after irradiation with ultraviolet rays under aerobic conditions, which will be described later, while avoiding the above-mentioned effects.

As a result, in the pickup process, when the adsorption collet is brought into contact with the top of the semiconductor chip after UV irradiation to the adhesive layer 2 in order to pick up the semiconductor chip with the die-bonding film, the adhesive layer 2 is removed from the adhesive layer 2 due to the expansion in the previous process. It is possible to significantly suppress the influence caused by the edge portion of the die-bonding film of a semiconductor chip with a die-bonding film that has been partially peeled off firmly re-adhering to the adhesive layer 2, which is insufficiently cured due to oxygen inhibition. That is, the re-adhesion force can be weakened to a level where the dicing tape 10 can be easily peeled off by pushing up the jig from the lower surface side, and the adhesive layer 2 and the die bond film of the semiconductor chip with the die bond film can be peeled off. Since suitable adhesion strength B can be imparted even to the surface that is in close contact with the die-bonding film after irradiation with ultraviolet rays in the absence of oxygen, it becomes possible to pick up the semiconductor chip with the die-bonding film from the adhesive layer 2 favorably from then on.

The amount of the photopolymerization initiator added (if two or more types are used in combination, the total amount) is 1.2 parts per 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. It is preferably in a range of 12.0 parts by mass or more and 12.0 parts by mass or less. If the amount of photopolymerization initiator added is less than 1.2 parts by mass, the photoreactivity to active energy rays is insufficient, so even if irradiated with active energy rays, the photoradical crosslinking reaction of the acrylic adhesive polymer will not occur. As a result, the effect of reducing the adhesive force in the adhesive layer 2 after irradiation with ultraviolet rays becomes small both in the presence of oxygen and in the absence of oxygen, and there is a possibility that pick-up failures of semiconductor chips may increase. On the other hand, if the amount of the photopolymerization initiator added exceeds 12.0 parts by mass, the effect is saturated, which is also unfavorable from the economic point of view. Further, depending on the type of photopolymerization initiator, the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in an oxygen-free environment may become larger than a desired value, which may increase the pickup failure of the semiconductor chip with the die-bonding film.

In an embodiment including certain preferred three types of photopolymerization initiators, an α-aminoalkylphenone photoinitiator (a), an alkylphenone photopolymerization initiator other than the α-aminoalkylphenone photoinitiator The amount of each of the agent (b) and the acylphosphine oxide photopolymerization initiator (c) is determined based on 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. The phenone photoinitiator (a) is in the range of 0.8 parts by mass or more and 5.0 parts by mass or less, and the alkylphenone photoinitiator (b) other than the above α-aminoalkylphenone photoinitiator is: The above acylphosphine oxide photopolymerization initiator (c) may be adjusted in a range of 0.2 parts by mass or more and 5.0 parts by mass or less, and 0.2 parts by mass or more and 2.0 parts by mass or less. preferable.

If the amount of the α-aminoalkylphenone photopolymerization initiator (a) added is less than 0.8 parts by mass, the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under aerobic conditions does not decrease to the desired value. There is a risk. On the other hand, when the amount of the α-aminoalkylphenone photopolymerization initiator (a) added exceeds 5.0 parts by mass, the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in an oxygen-free environment becomes lower than the desired value. There is also a risk that it will become larger. Moreover, there is a possibility that the storage stability of the dousing tape 10 will be deteriorated. When the amount of the alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator is less than 0.2 parts by mass, the adhesive layer 2 is There is a possibility that the adhesive strength may not decrease to the desired value after irradiation with ultraviolet rays. If the amount of the alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator exceeds 5.0 parts by mass, the effect will be saturated, and from an economical point of view. Undesirable. Moreover, there is a possibility that the storage stability of the dousing tape 10 will be deteriorated. When the amount of the acylphosphine oxide photopolymerization initiator (c) added is less than 0.2 parts by mass, the adhesive strength of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen and anoxic conditions reaches the desired value. There is a possibility that the temperature may not decrease to below. If the amount of the acylphosphine oxide photopolymerization initiator (c) added exceeds 2.0 parts by mass, the effect will be saturated and this is not preferred from the economic point of view. Furthermore, depending on the amount of the other photopolymerization initiators (a) and (b) added, the storage stability of the dossing tape 10 may deteriorate.

The above α-aminoalkylphenone photoinitiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photoinitiator (c) When the amount of each added is adjusted within the above range, as described above, the adhesive layer 2 will be irradiated with ultraviolet rays in both oxygen and non-oxygen conditions, thereby increasing its adhesive strength. can be lowered to a desired level, and the semiconductor chip with the die-bonding film can be favorably picked up from the adhesive layer 2 in the pick-up process.

In addition, as a sensitizer for the photopolymerization initiator, compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate may be added to the active energy ray-curable acrylic adhesive composition within a range that does not impair the effects of the present invention. It can be added to things.

[others]
The active energy ray curable adhesive composition of the present embodiment may optionally contain an active energy ray curable compound (for example, a polyfunctional urethane acrylic compound) within a range that does not impair the effects of the present invention. Additives such as oligomers, etc.), tackifiers, fillers, anti-aging agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, and leveling agents may be added.

[Active energy ray-reactive carbon-carbon double bond concentration]
The active energy ray-curable adhesive composition of the present embodiment is not particularly limited, but has an active energy ray-reactive carbon-carbon double bond concentration of 0.85 meq or more per 1 g of the active energy ray-curable adhesive composition. It is preferable to adjust it to a range of 1.50 meq or less. When the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable adhesive composition is less than 0.85 meq, after the crosslinking reaction per 1 g of the above-mentioned active energy ray-curable adhesive composition. When the residual hydroxyl group concentration of the adhesive layer 2 is high, the adhesive strength of the adhesive layer 2 after UV irradiation, especially the adhesive strength A after UV irradiation under aerobic conditions, does not decrease sufficiently, and the semiconductor chip with the die bond film is removed from the adhesive layer in the pick-up process. There is a possibility that it will be difficult to peel off from 2.

On the other hand, if the active energy ray-reactive carbon-carbon double bond concentration per gram of the active energy ray-curable adhesive composition exceeds 1.50 meq, the effect gradually saturates, which is preferable from an economical point of view. do not have. Furthermore, depending on the copolymerization composition of the acrylic adhesive polymer, it may easily gel during polymerization or reaction during synthesis, making synthesis difficult. Note that when confirming the carbon-carbon double bond content of the acrylic adhesive polymer, the carbon-carbon double bond content can be calculated by measuring the iodine value of the acrylic adhesive polymer.

As described above, when the active energy ray-reactive carbon-carbon double bond concentration is within the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray-curable adhesive composition, the adhesive layer 2 By being irradiated with ultraviolet rays both under oxygen and non-oxygen conditions, it becomes easy to reduce the adhesive strength to the desired level, and in the pick-up process, the semiconductor chip with the die-bonding film is removed from the adhesive layer 2 in good condition. Easy to pick up. The active energy ray-reactive carbon-carbon double bond concentration is more preferably in the range of 0.88 meq or more and 1.46 meq or less per 1 g of the active energy ray-curable adhesive composition.

[Adhesive strength of adhesive layer]
The adhesive force A of the adhesive layer 2 of the dicing tape 10 at 23° C. to a stainless steel plate (SUS304/BA plate) after irradiation with ultraviolet rays under aerobic conditions is in the range of 3.50 N/25 mm or less. Here, the adhesive strength A after irradiation with ultraviolet light under aerobic conditions is, as described above, for the adhesive layer portion exposed to the air after the edge portion of the cut die bond film (adhesive layer) 3 is peeled off. This is the adhesive strength of the adhesive layer 2 after UV irradiation, taking into consideration that the adhesive strength reduction effect due to UV irradiation cannot be sufficiently obtained due to polymerization inhibition by oxygen in the surrounding air. The smaller the adhesive strength A after irradiation with ultraviolet rays in the presence of oxygen is, the better, but it is difficult to completely prevent polymerization inhibition due to oxygen, and while there is a limit to reducing the adhesive strength, semiconductor chips with die-bonding films In the series of steps to obtain the adhesive strength of the dicing tape 10 after irradiation with ultraviolet rays under aerobic conditions, properties other than the adhesive strength A to the die bond film (adhesive layer) 3 of the dicing tape 10 need to be taken into consideration. In the agent layer, the lower limit is preferably kept at 1.25 N/25 mm. In addition, if the adhesive force A after irradiation with ultraviolet rays under aerobic conditions exceeds 3.50 N/25 mm, in the pick-up process, after irradiating the adhesive layer 2 with ultraviolet rays, the dicing tape 10 is placed on the push-up jig. A semiconductor chip with a die-bond film that was peeled off from the adhesive layer 2 of the dicing tape 10 when a pickup collet was brought into contact with and landed on the surface of the semiconductor chip from above. If the edges of the die-bonding film are not sufficiently cured, the semiconductor chip with the die-bonding film may be stuck to the adhesive layer 2 even by pushing up the jig from the bottom side of the dicing tape 10 and suctioning and lifting it with a suction collet. The dicing tape 10 is strongly re-adhered to the extent that it cannot be easily peeled off, and even if the dicing tape 10 is pushed up using a pushing up jig from the bottom side, it is difficult to create a trigger for it to come off from the edge, making it difficult to pick up the semiconductor chip with the die bond film. may be inhibited. Furthermore, if you try to forcefully pick up the semiconductor chip by increasing the push-up height (up-up amount) of the push-up jig, the risk of damaging the semiconductor chip increases. The adhesive strength A after UV irradiation under oxygen is preferably in the range of 1.30 N/25 mm or more and 3.00 N/25 mm or less, more preferably in the range of 1.35 N/25 mm or more and 2.75 N/25 mm or less. .

If the adhesive force A after irradiation with ultraviolet rays under aerobic conditions is in the range of 3.50 N/25 mm or less, in the pick-up process, after irradiating the adhesive layer 2 with ultraviolet rays, the dicing tape 10 is placed on the push-up jig. The semiconductor chip with the die bond film that had peeled off from the adhesive layer 2 of the dicing tape 10 when the suction collet for pickup was brought into contact and landed on the surface of the semiconductor chip from above. The phenomenon in which the edge portion of the die-bonding film is firmly re-adhered to the adhesive layer 2 which is insufficiently cured by ultraviolet irradiation is greatly suppressed.In other words, the semiconductor with the die-bonding film is The re-adhering force is weakened to a level where the chips can be easily peeled off from the adhesive layer 2, and when the dicing tape 10 is pushed up from the bottom side using a pushing up jig, it is easy to create a trigger for the chip to be detached from the edge portion. Pick-up of a semiconductor chip with a die-bonding film is not hindered. Furthermore, the risk of damage to the semiconductor chip during pickup is also reduced. As a result, in the pickup step, it becomes possible to favorably pick up the semiconductor chip with the die bond film from the adhesive layer 2 after irradiation with ultraviolet rays.

As described above, in the actual pick-up process, the edge portion of the die bond film of the semiconductor chip with die bond film that had been peeled off from the adhesive layer 2 of the dicing tape 10 was irradiated with ultraviolet rays while being exposed to the air. The reason why the re-adhering force is weaker than before when re-adhering to the adhesive layer 2 is presumed to be due to the following reason. That is, first, (1) the surface of the adhesive layer 2 whose adhesive force A after irradiation with ultraviolet light under oxygen conditions has been reduced to a level of 3.50 N/25 mm or less is cured to a desired level by irradiation with ultraviolet light; Appropriate hardness is provided. The adhesive layer 2 of this embodiment has a higher die-bonding property than the adhesive layer 2 before ultraviolet irradiation or the conventional adhesive layer after ultraviolet irradiation, which is insufficiently cured due to polymerization inhibition due to oxygen. The wettability and conformability to the film 3 are significantly suppressed. On the other hand, (2) when actually picking up a semiconductor chip with a die-bond film, the edge part of the die-bond film of the semiconductor chip with a die-bond film that has been peeled off from the adhesive layer 2 of the dicing tape 10 is attached to the semiconductor chip of the suction collet. The time from when the tape is re-adhered to the adhesive layer 2 after UV irradiation due to contact and landing until it is pushed up by a jig from the lower surface side of the dicing tape 10 is extremely short. Then, the peeled die bond film (adhesive Even if the surfaces of the edge portions of the dicing tape 10 come into contact again, the jig immediately starts pushing up the semiconductor chip with the die-bonding film from the bottom side of the dicing tape 10, before the two layers have fully blended together, and the jig starts pushing up the semiconductor chip with the die-bonding film from the bottom side of the dicing tape 10, leading to the pick-up. It will be transferred to In other words, when the two layers are reattached, it is possible to avoid maintaining the adhesive force between the two layers at a high value as in the conventional case.
Therefore, if the edge portion of the die-bond film of the semiconductor chip with die-bond film is moderately peeled off from the adhesive layer 2 due to the expanding process, the cut die-bond film (adhesive layer) and the pressure-sensitive adhesive layer do not peel off during the expansion process. It is thought that the force required to peel off the edge portion of the semiconductor chip with the die-bond film has become smaller.

The adhesive strength A after irradiation with ultraviolet light under oxygen conditions in the present invention is measured by the method described below. First, a dicing tape 10 and a stainless steel plate (SUS304/BA plate) are prepared separately. The dicing tape 10 is cut to a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated using a metal halide lamp from the second side of the adhesive layer of the dicing tape 10 from which the release liner has been peeled off (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) After that, the dicing tape 10 was applied to the stainless steel plate (SUS304/BA plate) from the edge of the two adhesive layers using a rubber roller weighing 2 kg in an environment of a temperature of 23°C and a humidity of 50% RH. A rubber roller is moved back and forth once at a speed of about 5 mm/sec to neatly press and bond the pieces together to obtain a test piece for measurement. After standing still for 20 minutes, the adhesive force of the test piece was measured using an adhesive/film peeling analyzer of a flexible peeling angle type shown in FIG. First, a test piece for measurement in which a dicing tape 10 is bonded to a stainless steel plate 4 is fixed and mounted on a flat plate cross stage 5 for an adhesive/film peeling analyzer using a special jig, and the end of the dicing tape 10 is It is fixed to a load cell 7 equipped with a gripping jig (not shown). Next, in an environment with a temperature of 23° C. and a humidity of 50% RH, as shown in FIG. While moving in the opposite direction (direction of arrow V1) to the load cell 7 at a stage speed V1 of 300 mm/min, the flat plate cross stage 5 is also moved on the rotating stage 8 at a peeling speed V2 of 300 mm/min synchronized with the stage speed V1 at a peeling angle of 90°. (direction of arrow V2). Thereby, the dicing tape 10 can be peeled off from the stainless steel plate 4 fixed and attached to the flat plate cross stage at a peeling speed of 300 mm/min while maintaining the peeling angle at 90°. The load cell 7 senses the load when the adhesive layer 2 and the base film 1 are peeled off from the stainless steel plate 4, and the adhesive strength is measured. By the above method, the adhesive strength (unit: N/25 mm) of the dicing tape 10 to the stainless steel plate (SUS304/BA plate) 4 at a peeling angle of 90° is measured. The measurement is performed on three test pieces, and the average value of the three test pieces is taken as the adhesive strength A of the dicing tape 10 after irradiation with ultraviolet light under aerobic conditions.

Further, the adhesive strength B of the adhesive layer 2 of the dicing tape 10 at 23° C. after irradiation with ultraviolet rays in an oxygen-free environment with respect to a stainless steel plate (SUS304/BA plate) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less. be. Here, the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment is defined as the adhesion strength B of the adhesive layer 2 and the adherend (die bond film 3) on the bonded surface (adhesive without peeling), without taking into account the effect of oxygen inhibition caused by surrounding oxygen. This is the adhesion force that represents the adhesion force after UV irradiation on From the viewpoint of improving the pick-up property, the adhesive force B after ultraviolet irradiation is preferably as small as possible within the above range, but if it is less than 0.25 N/25 mm, the semiconductor chip with the die-bonding film is used in the pre-pick-up stage. In this case, the dicing tape 10 may unintentionally fall off from its fixed position on the adhesive layer 2 or be misaligned. In addition, if the adhesive force B after irradiation with ultraviolet rays in an oxygen-free environment is greater than 0.70 N/25 mm, even if the dicing tape 10 is pushed up using a pushing up jig from the lower surface side in the pick-up process, the edge of the die bond film 3a Following the peeling of a portion, the peeling of the die bond film 3a from the adhesive layer 2 towards the center may be difficult to progress, and the pickup itself may be difficult. Furthermore, if the push-up height (up-up amount) of the push-up jig is increased to forcefully pick up the semiconductor chip, there is a risk that the semiconductor chip may be damaged. The adhesive force B after irradiation with ultraviolet rays under anoxic conditions is preferably in the range of 0.30 N/25 mm or more and 0.65 N/25 mm or less, more preferably in the range of 0.35 N/25 mm or more and 0.60 N/25 mm or less. .

If the adhesive force B after irradiation in an oxygen-free environment is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less, the dicing tape 10 is pushed up using a pushing up jig from the lower surface side in the pick-up process. In this case, on the contact surface between the die-bond film and the adhesive layer 2 of the semiconductor chip with the die-bond film, peeling of the die-bond film from the adhesive layer 2 tends to progress from the outer periphery of the contact surface toward the center, causing pickup. The properties become better. Furthermore, the risk of damage to the semiconductor chip during pickup is also reduced.

The adhesive strength B after irradiation with ultraviolet rays in the absence of oxygen in the present invention is measured by the method described below. First, a dicing tape 10 and a stainless steel plate (SUS304/BA plate) are prepared separately. The dicing tape 10 is cut to a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, a stainless steel plate (SUS304/BA plate) was heated at a temperature of 23° C. and a humidity of 50% RH using a rubber roller weighing 2 kg from the end of the adhesive layer 2 of the dicing tape 10 from which the release liner had been peeled off. In the environment, move the rubber roller back and forth once at a speed of about 5 mm/sec to neatly press and bond them together. After standing still for 20 minutes, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) and use it as a test piece for measurement. The test piece was diced onto a stainless steel plate (SUS304/BA plate) using the adhesive/film peeling analyzer of the flexible peeling angle type shown in Fig. 4 in the same way as the measurement of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions described above. The adhesive strength (unit: N/25 mm) of the tape 10 is measured at a peeling angle of 90°. The measurement is performed on three test pieces, and the average value of the three test pieces is taken as the adhesive strength B of the dicing tape 10 after irradiation with ultraviolet rays under anoxic conditions.

Determine the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under oxygen to the adhesive force B after irradiation with ultraviolet rays under oxygen under conditions of the adhesive layer 2 of the dicing tape 10, and evaluate the influence of polymerization inhibition by oxygen on the adhesive layer. I can do it. It is expressed as

In the dicing tape 10 of the present embodiment, the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under oxygen conditions to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is not particularly limited as long as the effects of the present invention are not impaired. , preferably in the range of 3.00 or more and 5.00 or less. When the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under oxygen conditions to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is within the above range, the adhesive layer 2 formed by the expanding process of the dicing tape 10 Regarding the part where the edge of the cut die bond film (adhesive layer) 3 has peeled off (floated), when it is irradiated with ultraviolet rays, the adhesive strength is sufficient due to polymerization inhibition due to oxygen contained in the surrounding air. This makes it easier to avoid maintaining the adhesive strength at a high value without decreasing the adhesive strength, that is, the re-adhesion strength can be increased to a level where it can be more easily peeled off by pushing up the jig from the bottom side of the dicing tape 10. It can be made weaker. As a result, when pushing up the dicing tape 10 from the bottom side using a push-up jig, it becomes easier to create a trigger for peeling from the edge part, and the force required to peel off the edge part of the semiconductor chip with the die bond film is reduced. Since it can be made smaller, it becomes possible to better pick up the semiconductor chip with the die bond film from the adhesive layer 2 after irradiation with ultraviolet rays.

[Thickness of adhesive layer]
The thickness of the adhesive layer 2 of this embodiment is not particularly limited, but is preferably in the range of 3 μm or more and 30 μm or less, more preferably 5 μm or more and 20 μm or less, and particularly preferably 8 μm or more and 15 μm or less. . When the thickness of the adhesive layer 2 is less than 3 μm, especially when the amount of polyisocyanate crosslinking agent added is large, the adhesive strength of the dicing tape 10 may be excessively reduced. In this case, the adhesion to the SUS ring frame may be insufficient, and the dicing tape 10 may peel off from the SUS ring frame during the cool expansion process, making it impossible to perform the normal expansion process. Moreover, when used as a dicing die bond film, poor adhesion between the adhesive layer 2 and the die bond film 3 may occur. On the other hand, if the thickness of the adhesive layer 2 exceeds 30 μm, especially if the amount of polyisocyanate crosslinking agent added is large, the die bond film 3 may be excessively removed from the adhesive layer 2 when the dicing tape 10 is cool expanded. There is a risk that the die-bond film 3 will not be able to be cut cleanly because the adhesive layer 2 will not be able to provide sufficient external force to the die-bond film 3, or that the kerf width will not be sufficiently secured. There is a risk of variation. In that case, there is a risk that pick-up failures of the semiconductor chip with the die-bonding film will increase. Moreover, from the viewpoint of economic efficiency, this is not very preferable in practice.

(Anchor coat layer)
In the dicing tape 10 of this embodiment, the base film 1 and the pressure-sensitive adhesive layer 2 are adjusted according to the manufacturing conditions of the dicing tape 10, the usage conditions of the dicing tape 10 after manufacturing, etc., within a range that does not impair the effects of the present invention. An anchor coat layer matching the composition of the base film 1 may be provided between the base film 1 and the base film 1. Providing the anchor coat layer improves the adhesion between the base film 1 and the adhesive layer 2.

(Release liner)
Further, a release liner may be provided on the opposite surface side (one surface side) of the adhesive layer 2 from the base film 1, if necessary. There are no particular restrictions on what can be used as the release liner, but examples include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, and papers. Further, the surface of the release liner may be subjected to a release treatment using a silicone-based release agent, a long-chain alkyl-based release agent, a fluorine-based release agent, or the like in order to improve the releasability of the adhesive layer 2. The thickness of the release liner is not particularly limited, but one in the range of 10 μm or more and 200 μm or less can be suitably used.

(Method for manufacturing dicing tape)
FIG. 4 is a flowchart illustrating a method for manufacturing the dicing tape 10. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution for the adhesive layer 2 (adhesive layer forming coating solution), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparation step). The coating solution can be prepared, for example, by uniformly mixing and stirring the acrylic adhesive polymer, which is a constituent component of the adhesive layer 2, a crosslinking agent, and a diluent solvent. As the solvent, for example, general-purpose organic solvents such as toluene and ethyl acetate can be used.

Then, using the coating solution for the adhesive layer 2 prepared in step S102, the coating solution is applied onto the release-treated surface of the release liner and dried to form the adhesive layer 2 with a predetermined thickness (step S103: Adhesive layer forming step). The coating method is not particularly limited, and can be coated using, for example, a die coater, comma coater (registered trademark), gravure coater, roll coater, reverse coater, or the like. Further, the drying conditions are not particularly limited, but for example, it is preferable that the drying temperature be within the range of 80° C. or more and 150° C. or less, and the drying time be within the range of 0.5 minutes or more and 5 minutes or less. Subsequently, the base film 1 is prepared (step S104: base film preparation step). Then, the base film 1 is pasted onto the adhesive layer 2 formed on the release liner (step S105: base film pasting step). Finally, the formed adhesive layer 2 is aged for 72 hours in an environment of, for example, 40° C. to cause the acrylic adhesive polymer to react with the crosslinking agent, thereby crosslinking and curing it (step S106: thermosetting step). Through the above steps, it is possible to manufacture a dicing tape 10 having the adhesive layer 2 and the release liner on the base film 1 in this order from the base film side. Note that, in the present invention, a laminate including a release liner on the adhesive layer 2 may also be referred to as the dicing tape 10.

In addition, as a method for forming the adhesive layer 2 on the base film 1, a coating solution for the adhesive layer 2 is applied onto the release liner and dried, and then the base material is coated on the adhesive layer 2. Although the method of bonding the film 1 is illustrated, a method of directly applying a coating solution for the adhesive layer 2 onto the base film 1 and drying it may also be used. From the viewpoint of stable production, the former method is preferably used.

The dicing tape 10 of this embodiment may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

<Dicing die bond film>
According to the second aspect of the present invention, the dicing tape 10 of the present embodiment has a die-bonding film (adhesive layer) 3 removably attached to the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. It can also be used in the form of a laminated dicing die bond film 20. The die bond film (adhesive layer) 3 is for adhering and connecting the separated semiconductor chips to a lead frame or a wiring board (supporting board). Furthermore, when semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips. In this case, the first-stage semiconductor chip is bonded to the semiconductor chip mounting wiring board on which terminals are formed by a die-bonding film (adhesive layer) 3, and a further die-bonding film (adhesive layer) is placed on top of the first-stage semiconductor chip. ) 3, the second stage semiconductor chip is bonded. The connection terminals of the first-stage semiconductor chip and the second-stage semiconductor chip are electrically connected to external connection terminals via wires, but the wires for the first-stage semiconductor chip are die-bonded during crimping (die bonding). It is embedded in the film (adhesive layer) 3, that is, the wire-embedded die bond film (adhesive layer) 3 described above. An example of the die bond film (adhesive layer) 3 in the case where the dicing tape 10 of this embodiment is used as the dicing die bond film 20 will be shown below, but it is not particularly limited to this example.

(Die bond film)
The die bond film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. A preferred embodiment of the adhesive composition includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin. Examples of thermosetting adhesive compositions include a resin composition containing the following, to which a curing accelerator, an inorganic filler, a silane coupling agent, etc. are added. The die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesion between a semiconductor chip and a support substrate, and between a semiconductor chip and a semiconductor chip, and also has excellent adhesion properties for electrode embedding and/or wire embedding. It is preferable because it has the following characteristics: it can be bonded at a low temperature in the die bonding process, it can be cured in a short time, and it has excellent reliability after being molded with a sealant.

A general-purpose die bond film is used in a form where the wire is not embedded in the adhesive layer, and a wire-embedded die bond film is used in a form where the wire is embedded in the adhesive layer. The types are often almost the same, but by changing the blending ratio of the materials used and the physical properties/characteristics of individual materials, etc., depending on the purpose, it is possible to make Customized for film. Furthermore, if there is no problem with the reliability of the final semiconductor device, a wire-embedded die bond film may be used as a general-purpose die bond film. That is, the wire-embedded die-bonding film is not limited to wire-embedding applications, but can also be used for bonding semiconductor chips to substrates with unevenness caused by wiring, metal substrates such as lead frames, and the like.

(Adhesive composition for general purpose die bond film)
First, an example of an adhesive composition for a general-purpose die-bonding film will be described, but the invention is not particularly limited to this example. As an indicator of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a general-purpose die bond film, the shear viscosity at 80°C is generally used. indicates a value in the range of 20,000 Pa·s or more and 40,000 Pa·s or less, preferably 25,000 Pa·s or more and 35,000 Pa·s or less. A preferred embodiment of the adhesive composition for general-purpose die-bonding films includes the sum of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components of the adhesive composition. When the amount is based on 100 parts by mass, (a) the above glycidyl group-containing (meth)acrylic acid ester copolymer in a range of 52 parts by mass to 90 parts by mass, and the above epoxy resin in a range of 5 parts by mass to 25 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the phenol resin in the following range, in the range of 5 parts by mass or more and 23 parts by mass or less of the phenolic resin, adjusted so that the total amount of the resin component is 100 parts by mass; and (c) an inorganic filler in the range of 0.1 part by mass or more and 0.3 parts by mass or less based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy resin. and the above-mentioned phenol resin, in an amount of 5 parts by mass or more and 20 parts by mass or less, based on 100 parts by mass of the total amount of the above-mentioned phenol resin.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]
The glycidyl group-containing (meth)acrylic ester copolymer includes at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate as a copolymer unit. is preferred. From the viewpoint of ensuring appropriate adhesive strength, the above-mentioned glycidyl (meth)acrylate copolymer unit is 0.5% by mass or more and 6.0% by mass in the total amount of the glycidyl group-containing (meth)acrylate ester copolymer. It is preferably included in the following range, and more preferably in a range of 2.0% by mass or more and 4.0% by mass or less. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers such as styrene or acrylonitrile as a copolymer unit, if necessary, from the viewpoint of adjusting the glass transition temperature (Tg). You can stay there.

The glass transition temperature (Tg) of the above-mentioned glycidyl group-containing (meth)acrylic ester copolymer is preferably in the range of -50°C or higher and 30°C or lower, improving handleability as a die-bonding film (improving tackiness). From the viewpoint of (suppression), the temperature is more preferably in the range of -10°C or more and 30°C or less. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, ethyl (meth)acrylate and It is preferred to use/or butyl (meth)acrylate.

The weight average molecular weight Mw of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of 500,000 to 2,000,000, more preferably in the range of 700,000 to 1,000,000. When the weight average molecular weight Mw is within the above range, it is easy to obtain appropriate adhesive strength, heat resistance, and flowability. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic ester copolymer in the die-bonding film (adhesive layer) 3 is the content of the glycidyl group-containing (meth)acrylic ester copolymer that is a resin component in the adhesive composition. When the total amount of the combined epoxy resin and phenol resin, which will be described later, is the standard 100 parts by mass, it is preferably in the range of 52 mass% or more and 90 mass% or less, and in the range of 60 mass% or more and 80 mass% or less. It is more preferable that there be.

[Epoxy resin]
Epoxy resins are not particularly limited, but include, for example, bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak epoxy resin, alkylphenol Novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, diglycidylyetherized biphenol, diglycidylyetherized naphthalene diol, diglycidylyetherized phenol, diglycidyl ether of alcohols Bifunctional epoxy resins such as compounds, alkyl substituted products, halides, and hydrogenated products thereof, novolac type epoxy resins, and the like. Other commonly known epoxy resins such as polyfunctional epoxy resins and heterocycle-containing epoxy resins may also be used. These may be used alone or in combination of two or more.

The softening point of the epoxy resin is preferably in the range of 70° C. or higher and 130° C. or lower from the viewpoint of adhesive strength and heat resistance. Further, the epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described below.

The content ratio of the epoxy resin in the die-bonding film (adhesive layer) 3 is determined from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and the phenol resin described below is 100 parts by mass as a standard, the range is 5% by mass or more and 25% by mass or less. It is preferable that it is, and it is more preferable that it is the range of 10 mass % or more and 20 mass % or less.

[Phenol resin: hardening agent for epoxy resin]
Curing agents for epoxy resins are not particularly limited, but include, for example, phenol resins that can be obtained by reacting a phenol compound with a xylylene compound, which is a divalent linking group, without a catalyst or in the presence of an acid catalyst. . Examples of the above-mentioned phenolic resins include novolac type phenolic resins, resol type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene. Examples of the novolak type phenolic resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. These phenolic resins may be used alone or in combination of two or more. Among these phenolic resins, phenol novolac resins and phenol aralkyl resins tend to improve the connection reliability of the die bond film (adhesive layer) 3, and are therefore preferably used.

The softening point of the phenol resin is preferably in the range of 70° C. or higher and 90° C. or lower from the viewpoint of adhesive strength and heat resistance. Further, the hydroxyl equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the above thermosetting resin composition, the phenol resin is It is preferable to blend the hydroxyl group in an amount that is preferably in the range of 0.5 equivalent or more and 2.0 equivalent or less, more preferably 0.8 equivalent or more and 1.2 equivalent or less. It depends on the functional group equivalent of each resin, so it cannot be stated unconditionally, but for example, the content ratio of phenol resin is the same as that of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition. When the total amount of the epoxy resin and the phenol resin is a standard 100 parts by mass, it is preferably in the range of 5% by mass or more and 23% by mass or less.

[Curing accelerator]
Furthermore, a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition, if necessary. Specific examples of such curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimeryl. Examples include tate, which may be used alone or in combination of two or more. The amount of the curing accelerator added is preferably in the range of 0.1 parts by mass or more and 0.3 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin.

[Inorganic filler]
Furthermore, an inorganic filler can be added to the thermosetting resin composition as necessary from the viewpoint of controlling the fluidity of the die-bonding film (adhesive layer) 3 and improving the elastic modulus. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, and crystals. Examples include crystalline silica and amorphous silica, and these may be used alone or in combination of two or more. Among these, crystalline silica, amorphous silica, etc. are preferably used from the viewpoint of versatility. Specifically, for example, Aerosil (registered trademark: ultrafine particle dry silica) having a nano-sized average particle diameter is preferably used. The content ratio of the inorganic filler in the die-bonding film (adhesive layer) 3 is 100% based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are the resin components mentioned above. When expressed as parts by mass, it is preferably in the range of 5% by mass or more and 20% by mass or less.

[Silane coupling agent]
Furthermore, a silane coupling agent may be added to the thermosetting resin composition, if necessary, from the viewpoint of improving adhesive strength to an adherend. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. can also be used alone or in combination of two or more. The amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass or more and 7.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin.

[others]
Furthermore, a flame retardant, an ion trapping agent, etc. may be added to the thermosetting resin composition within a range that does not impair its function as a die-bonding film. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, hydrated antimony oxide, zirconium phosphate with a specific structure, magnesium silicate, aluminum silicate, triazole compounds, tetrazole compounds, and bipyridyl compounds. Can be mentioned.

(Adhesive composition for wire-embedded die bond film)
Next, an example of an adhesive composition for a wire-embedded die-bonding film will be described, but the invention is not particularly limited to this example. As an index of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a wire-embedded die bond film, generally The shear viscosity shows a value in the range of 200 Pa·s or more and 11,000 Pa·s or less, preferably 2,000 Pa·s or more and 7,000 Pa·s or less. A preferred embodiment of the adhesive composition for wire-embedded die-bonding films includes the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component of the adhesive composition, the epoxy resin, and the phenol resin. (a) The glycidyl group-containing (meth)acrylic acid ester copolymer is in the range of 17 parts by mass or more and 51 parts by mass, and the epoxy resin is in the range of 30 parts by mass or more and 64 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the phenol resin in a range of 19 parts by mass or more and 53 parts by mass or less, adjusted so that the total amount of the resin component is 100 parts by mass; and (c) an inorganic filler in the range of 0.01 part by mass or more and 0.07 parts by mass or less based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy resin. and the above-mentioned phenolic resin in an amount of 10 parts by mass or more and 80 parts by mass or less, based on 100 parts by mass of the total amount of the phenol resin.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]
The glycidyl group-containing (meth)acrylic acid ester copolymer contains at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate as a copolymer unit. is preferred. In the case of wire-embedded die bonding films, it is necessary to improve fluidity during die bonding and ensure adhesive strength after curing. A group-containing (meth)acrylic ester copolymer (A) and a glycidyl group-containing (meth)acrylic ester copolymer (B) having a low copolymer unit ratio of glycidyl (meth)acrylate and a high molecular weight. A combination of these is preferred, and it is preferred that a certain amount or more of the former component (A) is included in the combination.

Specifically, the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for a wire-embedded die-bonding film is prepared by adding a glycidyl group-containing copolymer unit of glycidyl (meth)acrylate to a glycidyl group-containing It is contained in the total amount of (meth)acrylic acid ester copolymer in the range of 5.0% by mass or more and 15.0% by mass or less, the glass transition temperature (Tg) is in the range of -50°C or more and 30°C or less, and the weight A glycidyl group-containing (meth)acrylic acid ester copolymer (A) having an average molecular weight Mw in the range of 100,000 to 400,000, and a glycidyl group-containing (meth)acrylate copolymer unit It is contained in the total amount of meth)acrylic acid ester copolymer in the range of 1.0% by mass or more and 7.0% by mass or less, the glass transition temperature (Tg) is in the range of -50°C or more and 30°C or less, and the weight average It is preferable to use a mixture with a glycidyl group-containing (meth)acrylic acid ester copolymer (B) having a molecular weight Mw of 500,000 to 900,000. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography.

The content of the glycidyl group-containing (meth)acrylic ester copolymer (A) is 60% by mass in the total amount of the glycidyl group-containing (meth)acrylic ester copolymer (total of (A) and (B)). The content is preferably in the range of 90% by mass or less. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers such as styrene or acrylonitrile as a copolymer unit, if necessary, from the viewpoint of adjusting the glass transition temperature (Tg). You can stay there.

The glass transition temperature (Tg) of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer as a whole is preferably in the range of -50°C or higher and 30°C or lower, which improves handleability as a die-bonding film (tackiness). From the viewpoint of (suppression of), the temperature is more preferably in the range of -10°C or more and 30°C or less. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, as the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms, ethyl (meth)acrylate is used. It is preferred to use and/or butyl (meth)acrylate.

The content ratio of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)) in the wire-embedded die bonding film (adhesive layer) 3 is determined by the fluidity and From the viewpoint of adhesive strength after curing, 100 parts by mass based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition, and the epoxy resin and phenol resin described below. In this case, it is preferably in the range of 17% by mass or more and 51% by mass or less, and more preferably in the range of 20% by mass or more and 45% by mass or less.

[Epoxy resin]
The epoxy resin is not particularly limited, but the same ones as exemplified as the epoxy resin for the above-mentioned general-purpose die bond film adhesive composition can be used. These may be used alone or in combination of two or more types, but in the case of a wire-embedded die bond film, it is possible to ensure adhesive strength, suppress the generation of voids on the bonding surface, and improve the bonding properties of the wire. Since it is necessary to provide good embeddability, it is preferable to use two or more types of epoxy resins in combination in order to control the fluidity and elastic modulus.

Preferred embodiments of the epoxy resin used for the wire-embedded die bond film (adhesive layer) 3 include an epoxy resin (C) that is liquid at room temperature and an epoxy resin (D) that has a softening point of 98°C or lower, preferably 85°C or lower. ). The content of the above-mentioned epoxy resin (C) which is liquid at room temperature is preferably in the range of 15% by mass or more and 75% by mass or less based on the total amount of epoxy resin (total of (C) and (D)), and 30% by mass or less. More preferably, the content is in the range of 50% by mass or more. The epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described below.

The content ratio of the epoxy resin in the die-bonding film (adhesive layer) 3 is determined from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and the phenol resin described below is the standard 100 parts by mass, the range is 30% by mass or more and 64% by mass or less. It is preferable that it is, and it is more preferable that it is the range of 35 mass % or more and 50 mass % or less.

[Phenol resin: hardening agent for epoxy resin]
The curing agent for the epoxy resin is not particularly limited, but the same curing agent as exemplified as the phenol resin for the above-mentioned general-purpose die bond film adhesive composition can be used in the same manner. The softening point of the phenol resin is preferably in the range of 70° C. or higher and 115° C. or lower from the viewpoint of adhesive strength and fluidity. Further, the hydroxyl equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the above thermosetting resin composition, the phenol resin is The hydroxyl group is preferably blended in an amount of 0.5 equivalent or more and 2.0 equivalent or less, more preferably 0.6 equivalent or more and 1.0 equivalent or less from the viewpoint of achieving both fluidity during die bonding. is preferable. It depends on the functional group equivalent of each resin, so it cannot be stated unconditionally, but for example, the content ratio of phenol resin is the same as that of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition. When the total amount of the epoxy resin and the phenol resin is a standard 100 parts by mass, it is preferably in the range of 19% by mass or more and 53% by mass or less.

[Curing accelerator]
Furthermore, a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition, if necessary. As such a curing accelerator, the same one as exemplified as the curing accelerator for the above-mentioned general-purpose die bond film adhesive composition can be used. The amount of the curing accelerator added is 0.01 parts by mass or more and 0.07 parts by mass or less, based on the total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. Preferably, the range is within the range.

[Inorganic filler]
Furthermore, the thermosetting resin composition may be used from the viewpoints of improving the handling of the die bonding film (adhesive layer) 3, adjusting fluidity during die bonding, imparting thixotropic properties, and improving adhesive strength. , an inorganic filler can be added if necessary. As the inorganic filler, the same ones as those exemplified as the inorganic filler for the adhesive composition for general-purpose die-bonding films mentioned above can be used in the same way, but among these, from the viewpoint of versatility, silica filler is preferable. Suitably used. The content ratio of the inorganic filler in the die bonding film (adhesive layer) 3 is determined from the viewpoint of fluidity during die bonding, breakability during cool expansion, and adhesive strength. When the total amount of the acrylic ester copolymer, epoxy resin, and phenol resin is the standard 100 parts by mass, the range is preferably 10% by mass or more and 80% by mass or less, and 15% by mass or more and 50% by mass or less. The range is more preferable.

The above inorganic filler is a mixture of two or more types of inorganic fillers with different average particle diameters in order to improve the breakability of the die bond film (adhesive layer) 3 during cool expansion and to sufficiently develop adhesive strength after curing. It is preferable to do so. Specifically, it is preferable to use an inorganic filler having an average particle diameter in the range of 0.1 μm or more and 5 μm or less as the main inorganic filler component accounting for 80% by mass or more based on the total mass of the inorganic filler. If it is necessary to suppress foaming of the die bond film 3 during the semiconductor chip manufacturing process due to excessively high fluidity of the die bond film (adhesive layer) 3 or to improve adhesive strength after curing, the average particle size may be An inorganic filler having a diameter of less than 0.1 μm may be used in combination with the above-mentioned main inorganic filler component in an amount of 20% by mass based on the total mass of the inorganic filler.

[Silane coupling agent]
Furthermore, a silane coupling agent may be added to the thermosetting resin composition, if necessary, from the viewpoint of improving adhesive strength to an adherend. As the silane coupling agent, the same one as exemplified as the silane coupling agent for the above-mentioned general-purpose die bond film adhesive composition can be used. The amount of the silane coupling agent added is 0.5 parts by mass or more and 2.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. It is preferable that it is in the range of .

[others]
Furthermore, a flame retardant, an ion trapping agent, etc. may be added to the thermosetting resin composition within a range that does not impair the function of the die-bonding film 3. As these flame retardants and ion trapping agents, the same ones as those exemplified as the flame retardants and ion trapping agents for the above-mentioned general-purpose die-bonding film adhesive composition can be used.

(Thickness of die bond film (adhesive layer))
The thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but is in order to ensure adhesive strength, to properly embed wires for connecting semiconductor chips, or to sufficiently fill irregularities such as wiring circuits on the board. , preferably in the range of 5 μm or more and 200 μm or less. If the thickness of the die-bonding film (adhesive layer) 3 is less than 5 μm, the adhesive force between the semiconductor chip and the lead frame, wiring board, etc. may be insufficient. On the other hand, if the thickness of the die-bonding film (adhesive layer) 3 is larger than 200 μm, it will not be economical, and it will likely be insufficient to cope with the miniaturization and thinning of semiconductor devices. In addition, in terms of high adhesiveness and the ability to reduce the thickness of the semiconductor device, the thickness of the film adhesive is more preferably in the range of 10 μm or more and 100 μm or less, particularly preferably in the range of 20 μm or more and 75 μm or less.

More specifically, the thickness when used as a general-purpose die bond film (adhesive layer) is, for example, preferably in the range of 5 μm or more and less than 30 μm, particularly in the range of 10 μm or more and 25 μm or less. The thickness when used as an agent layer is, for example, preferably in the range of 30 μm or more and 100 μm or less, particularly preferably in the range of 40 μm or more and 80 μm or less.

(Manufacturing method of die bond film)
The die-bonding film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare the release liner. Note that the same release liner as the release liner disposed on the adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die bond film (adhesive layer) 3, which is a forming material of the die bond film (adhesive layer) 3, is prepared. The coating solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, and a curing accelerator, which are the constituent components of the die-bonding film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing a silane coupling agent, silane coupling, etc., and a diluting solvent. As the solvent, for example, general-purpose organic solvents such as methyl ethyl ketone and cyclohexanone can be used.

Next, a coating solution for the die bond film (adhesive layer) 3 is applied onto the release-treated surface of the release liner serving as a temporary support, dried, and a predetermined thickness of the die bond film (adhesive layer) is applied. ) form 3. Thereafter, the release-treated surface of another release liner is bonded onto the die-bonding film (adhesive layer) 3. The coating method is not particularly limited, and can be coated using, for example, a die coater, comma coater (registered trademark), gravure coater, roll coater, reverse coater, or the like. As for the drying conditions, for example, it is preferable that the drying temperature is in the range of 60° C. or more and 200° C. or less, and the drying time is in the range of 1 minute or more and 90 minutes or less. In the present invention, a laminate in which a release liner is provided on both sides or one side of the die bond film (adhesive layer) 3 may also be referred to as the die bond film (adhesive layer) 3.

(Method for manufacturing dicing die bond film)
The method for manufacturing the dicing die-bonding film 20 is not particularly limited, but it can be manufactured by a conventionally known method. For example, the dicing die bond film 20 is prepared by first preparing the dicing tape 10 and die bond film 3 separately, and then peeling off the release liner of the adhesive layer 2 of the dicing tape 10 and the release liner of the die bond film (adhesive layer) 3. Then, the adhesive layer 2 of the dicing tape 10 and the die-bonding film (adhesive layer) 3 may be bonded together by pressing, for example, with a pressure roll such as a hot roll laminator. The bonding temperature is not particularly limited, and is preferably in the range of 10°C or more and 100°C or less, and the bonding pressure (linear pressure) is, for example, in the range of 0.1 kgf/cm or more and 100 kgf/cm or less. It is preferable that there be. In the present invention, the dicing die bond film 20 may also be referred to as a laminate in which a release liner is provided on the adhesive layer 2 and the die bond film (adhesive layer) 3. In the dicing die bond film 20, the release liner provided on the adhesive layer 2 and the die bond film (adhesive layer) 3 may be peeled off when the dicing die bond film 20 is used for a work.

The dicing die-bonding film 20 may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

For example, as disclosed in Japanese Unexamined Patent Application Publication No. 2011-159929, an adhesive layer (die bond film 3) pre-cut into the shape of a wafer constituting a semiconductor element on a release base material (release liner) and an adhesive film (dicing It is also possible to manufacture a large number of tapes 10) in the form of a film roll formed into island shapes. In this case, the dicing tape 10 is formed into a circle with a larger diameter than the die bond film (adhesive layer) 3, and the die bond film (adhesive layer) 3 is formed into a circle with a larger diameter than the semiconductor wafer 30. . When pre-cutting is performed in such a film roll form, the dicing tape 10 is locally heated and/or cooled in order to peel off and remove the excess dicing tape 10 continuously and well without cutting. may be done. Here, the heating temperature is appropriately selected, but is preferably in the range of 30° C. or higher and 120° C. or lower. The heating time is selected as appropriate, but is preferably in the range of 0.1 seconds or more and 10 seconds or less. Since the dicing tape 10 of the present invention has a certain heat resistance, even if it is subjected to heat treatment at a high temperature of 120° C., there will be no particular problem in its handling.

<Method for manufacturing semiconductor chips>
FIG. 6 illustrates a method for manufacturing a semiconductor chip with a die bond film using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. It is a flowchart. Further, in FIG. 7, a ring frame (wafer ring) 40 is placed on the outer edge of the dicing tape 10 (exposed part of the adhesive layer 2) of the dicing die bond film 20, and individual pieces are placed on the die bond film (adhesive layer) 3 in the center. FIG. 2 is a schematic diagram showing a state in which a printed semiconductor wafer (a plurality of semiconductor chips) is attached. Furthermore, FIGS. 8A to 8F show the grinding process of a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation, and the dicing die bond film of a plurality of cut semiconductor wafers (a plurality of semiconductor chips). 20 is a cross-sectional view showing an example of a bonding process to 20. FIG. 9(a) to (f) show the process from expanding to picking up to obtain individual semiconductor chips with die bond fill from a plurality of cut thin film semiconductor wafers bonded and held on the dicing die bond film 20. FIG. 2 is a cross-sectional view showing an example of a manufacturing method including a series of steps.

(Method for manufacturing semiconductor chips using dicing die bond film 20)
The method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and may be any conventionally known method. Here, a manufacturing method using SDBG (Stealth Dicing Before Griding) will be exemplified and explained. do.

First, as shown in FIG. 8A, a semiconductor wafer W having a plurality of integrated circuits (not shown) mounted on a first surface Wa of a semiconductor wafer W whose main component is silicon, for example, is prepared (FIG. 6A). step S201: preparation step). Then, a wafer processing tape (backgrind tape) T having an adhesive surface Ta is bonded to the first surface Wa side of the semiconductor wafer W.

Next, as shown in FIG. 8(b), while the semiconductor wafer W is held on the wafer processing tape T, the laser beam, which is focused inside the wafer, is directed to the side opposite to the wafer processing tape T. In other words, the semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer along the lattice-shaped dicing line X, and a modified region 30b is formed in the semiconductor wafer W due to ablation caused by multiphoton absorption. is formed (step S202 in FIG. 6: modified region forming step). The modified region 30b is a weakened region for cutting and separating the semiconductor wafer W into semiconductor chips by a grinding process. A method of forming the modified region 30b along the planned dicing line by irradiating a laser beam on a semiconductor wafer W is described in, for example, Japanese Patent No. 3408805, Japanese Patent Application Publication No. 2002-192370, Japanese Patent Application Publication No. 2003-338567, etc. Reference may be made to the disclosed method.

Next, as shown in FIG. 8(c), with the semiconductor wafer W held on the wafer processing tape T, the semiconductor wafer W is ground by grinding from the second surface Wb until it reaches a predetermined thickness. The film is made thinner. Here, the thickness of the semiconductor wafer 30 to be thinned is preferably adjusted to 100 μm, more preferably 10 μm or more and 50 μm or less, from the viewpoint of making the semiconductor device thinner. In the main grinding/thinning step, when the thinned semiconductor wafer 30 is subjected to the grinding load of the grinding wheel, cracks occur in the vertical direction starting from the modified region 30b formed in FIG. 7(b). The semiconductor chips 30a grow and are cut into a plurality of semiconductor chips 30a on a wafer processing tape T along a cutting line 30c corresponding to the planned dicing line X.

Next, as shown in FIGS. 8(d) and 8(e), the plurality of semiconductor chips 30a held on the wafer processing tape T are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (see FIG. 6 step S204: bonding process). In this step, after peeling off the release liner from the adhesive layer 2 and the die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circular shape, the dicing tape 10 of the dicing die bond film 20 is removed as shown in FIG. A ring frame (wafer ring) 40 is attached to the outer edge (exposed part of the adhesive layer 2), and a die bond film (adhesive layer) 3 is laminated on the upper center of the adhesive layer 2 of the dicing tape 10. A plurality of semiconductor chips 30a held by a wafer processing tape T are attached to the wafer processing tape T. Thereafter, as shown in FIG. 8(f), the wafer processing tape T is peeled off from the plurality of thin film semiconductor chips 30a. The pasting is performed while being pressed by a pressing means such as a pressure roll. The bonding temperature is not particularly limited, and, for example, is preferably in the range of 20° C. or higher and 130° C. or lower, and from the viewpoint of reducing warpage of the semiconductor chip 30a, is preferably in the range of 40° C. or higher and 100° C. or lower. More preferred. The pasting pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. Since the dicing tape 10 of the present invention has a certain heat resistance, even if the application temperature is high, there is no particular problem in its handling.

Subsequently, after the ring frame 40 is pasted on the adhesive layer 2 of the dicing tape 10 in the dicing die bond film 20, as shown in FIG. 9(a), the dicing die bond film 20 with the plurality of semiconductor chips 30a is is fixed to the holder 41 of the expanding device. As shown in FIG. 9(b), the thin film semiconductor wafer 30 (semiconductor chips 30a) cut along the cutting line 30c is cut on the lower surface of the thin film semiconductor wafer 30 (semiconductor chips 30a) so that it can be separated into pieces as a plurality of semiconductor chips 30a with die-bonding films. A die bond film 3 that will be cut along the dicing line X in the next step is attached to the side.

Next, a first expanding process under relatively low temperature conditions (for example, -30°C to 0°C), that is, a cool expanding process, is performed as shown in FIG. 9(c), and the dicing die bond film 20 The die bond film (adhesive layer) 3 is cut into small pieces of the die bond film (adhesive layer) 3a corresponding to the size of the semiconductor chip 30a, and the semiconductor chip 30a with the die bond film 3a is obtained (step S205 in FIG. 6). : cool expansion process). In this step, a hollow cylindrical push-up member (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 20 and raised, and the semiconductor wafer 30 (semiconductor The dicing tape 10 of the dicing die-bonding film 20 to which the chips 30a) are bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30. Internal stress generated by pulling the dicing tape 10 in all directions due to cool expansion is transmitted as external stress to the die bond film 3 attached to the diced semiconductor wafer 30 (semiconductor chips 30a). Due to this external stress, the die bond film 3, which has become brittle at low temperature, is cut into small pieces of the die bond film 3a having the same size as the semiconductor chip 30a, thereby obtaining the semiconductor chip 30a with the die bond film 3a.

The temperature conditions in the cool expansion step are, for example, -30°C or more and 0°C or less, preferably -20°C or more and -5°C or less, and more preferably -15°C or more and -5°C or less. The temperature is particularly preferably -15°C. The expansion speed (the speed at which the hollow cylindrical push-up member rises) in the cool expansion step is preferably in the range of 0.1 mm/sec to 1000 mm/sec, more preferably 10 mm/sec to 300 mm/sec. range. Further, the amount of expansion (the height of the hollow cylindrical push-up member) in the cool expansion step is preferably in the range of 3 mm or more and 16 mm or less.

Here, in the dicing tape 10 of the present invention, first, the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is adjusted to an appropriate range of 165 MPa or more and 260 MPa or less. Therefore, the internal stress generated by cool expansion in all directions of the dicing tape 10 is absorbed by the die bond film that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition. 3 as external stress, and as a result, the die bond film 3 is cut cleanly and with a high yield. Further, in the dicing tape 10 of the present invention, the adhesive layer 2 is composed of an adhesive composition mainly composed of an acrylic adhesive polymer having a specific hydroxyl value and a specific amount of a polyisocyanate crosslinking agent, and The equivalent ratio (-NCO)/(-OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent and the hydroxyl value (-OH) of the acrylic adhesive polymer is controlled to 0.14 or more and 1.32 or less. Therefore, the adhesive layer 2 after the crosslinking reaction has a hardness that can transmit an appropriate impact to the interface between the edge part of the die bond film and the adhesive layer 2 immediately below it at the moment the die bond film 3 is cut. , and a cohesive force capable of transmitting stress in a direction away from the die-bonding film 3, and a suitable initial adhesion force to the die-bonding film 3 is also imparted. As a result, in the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a that has been cut by cool expansion, the edge portion (four peripheral portions) of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is moderately separated from the adhesive layer 2 of the dicing tape 10. This facilitates peeling, and a state in which the dicing tape 10 is partially peeled off from the adhesive layer 2 is properly formed. In addition, in this case, the stress applied to the die bond film 3 and the adhesive layer 2 and the initial adhesion force to the die bond film 3 are moderately suppressed, so the cut die bond film peels off excessively from the adhesive layer 2. Without this, a sufficient kerf width can be ensured, and damage caused by collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2 can be avoided.

In addition, in FIG. 9(c), for convenience, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is shown in such a way that it is in close contact with the adhesive layer 2 of the dicing tape 10. Although shown in the figure, in reality, as shown in the enlarged cross-sectional view of FIG. The central portion of the die bonding film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10.

After the cool expansion step, the hollow cylindrical push-up member of the expanding device is lowered, and the expanded state of the dicing tape 10 is released.

Next, a second expanding process under conditions of relatively high temperature (for example, 10°C to 30°C), that is, a room temperature expanding process, is performed as shown in FIG. 9(d), and the die bond film (adhesive The distance (kerf width) between semiconductor chips 30a with layer 3a is increased. In this step, a cylindrical table (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 20 and raised, and the dicing tape 10 of the dicing die-bonding film 20 is expanded (see FIG. 6 step S206: room temperature expansion step). By ensuring a sufficient distance (kerf width) between the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a through the room-temperature expansion process, the recognition of the semiconductor chips 30a by a CCD camera, etc. is improved, and the adjacent semiconductor chips 30a are easily recognized when picked up. It is possible to prevent the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a from being re-adhered to each other, which occurs when the semiconductor chips 30a come into contact with each other. As a result, the pick-up performance of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved in the pick-up process described later.

In addition, in FIG. 9(d), for convenience, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is in close contact with the adhesive layer 2 of the dicing tape 10. Although shown in the figure, in reality, as shown in the enlarged cross-sectional view of FIG. The central portion of the die bonding film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10. During normal temperature expansion, the adhesive strength of the part where the die bond film 3a (adhesive layer) and the adhesive layer 2 are in close contact is higher due to the higher environmental temperature than during cool expansion, and the adhesive strength of the dicing tape 10 is higher. It is possible to perform expansion while suppressing generated tensile stress. Therefore, although peeling may progress slightly from the peeled state of the die bond film 3a after cool expansion as shown in FIG. 9(c) due to the room temperature expansion step, peeling does not progress excessively.

The temperature conditions in the room temperature expansion step are, for example, 10°C or higher, preferably 15°C or higher and 30°C or lower. The expansion speed (the speed at which the cylindrical table rises) in the room temperature expansion step is, for example, in the range of 0.1 mm/sec to 50 mm/sec, preferably in the range of 0.3 mm/sec to 30 mm/sec. . Further, the amount of expansion in the room temperature expansion step is, for example, in the range of 3 mm or more and 20 mm or less.

After the dicing tape 10 is expanded at room temperature by raising the table, the table vacuum-chucks the dicing tape 10. Then, the table is lowered together with the workpiece while the suction by the table is maintained, and the expanded state of the dicing tape 10 is released. In order to suppress narrowing of the kerf width of the semiconductor chip 30a with the die bonding film (adhesive layer) 3a on the dicing tape 10 after the expanded state is released, it is necessary to It is preferable to heat shrink the circumferential portion outside the semiconductor chip 30a holding area by blowing hot air to eliminate slack in the dicing tape 10 caused by expansion, thereby maintaining the dicing tape 10 in a tensioned state. After the heat shrinkage, the vacuum suction state by the table is released. The temperature of the hot air may be adjusted depending on the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape 10, the air volume, etc., but is preferably in the range of 200° C. or more and 250° C. or less, for example. Further, the distance between the hot air outlet and the dicing tape 10 is preferably in a range of, for example, 15 mm or more and 25 mm or less. Further, the air volume is preferably in a range of, for example, 35 L/min or more and 45 L/min or less. Note that when performing the heat shrink process, the stage of the expanding device is rotated at a rotation speed in a range of, for example, 3°/second to 10°/second, and the circumference of the dicing tape 10 outside the semiconductor chip 30a holding area is rotated. Blow hot air along the area.

The dicing tape 10 of the present invention is made of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA) as its base film 1. Since the resin film is suitably used, the thermoplastic cross-linked resin (IO) made of an ionomer cross-linked with metal ions has a sufficiently large restoring force during heating against distortion after expansion. It has high shrinkage. Therefore, in the heat shrink process, when high-temperature hot air is blown onto the slack portion (circumferential portion) of the dicing tape 10 caused by expansion, the circumferential portion of the dicing tape 10 is heat-shrinked without any problem and the slack is eliminated. Therefore, the kerf width expanded by normal temperature expansion can be maintained by the tension of the dicing tape 10.

FIG. 11 shows a state in which the edge portion of the small die bond film 3a is partially peeled off from the adhesive layer 2 of the dicing tape 10 after the above-mentioned cool expansion process to shrink process. FIG. The area of the edge portion of the small piece of die-bonding film 3a peeled from the adhesive layer 2 is not particularly limited as long as it does not impair the effects of the present invention. In state 9 (corresponding to part 9 in FIG. 10) of one small piece of die-bonding film 3a held on the adhesive layer 2 observed from the adhesive layer 2 (film side), the small piece of die-bonding film 3a peeled off from the adhesive layer 2. A small piece of die-bond film that has been peeled off from the adhesive layer 2, where the area of the edge portion (hatched area) is S1 and the area of the part (white part) of the small piece of die-bond film 3a that is in close contact with the adhesive layer 2 is S2. It is preferable that the ratio of the area S1 of the edge portion of the die bond film 3a is in the range of 10% or more and 45% or less with respect to the area (=S1+S2) of the entire small die bond film 3a. More preferably, it is in the range of 15% or more and 40% or less.

When the ratio of the area S1 is less than 10%, in the total force required to peel the semiconductor chip 30a with the die-bonding film 3a from the adhesive layer 2, the effect of reducing the adhesive force A after irradiation with ultraviolet rays under oxygen conditions, that is, There is a possibility that the effect of reducing the force required for peeling off the edge portion of the semiconductor chip 30a with the die bond film 3a may not be sufficiently reflected. As a result, when the dicing tape 10 is pushed up using a push-up jig from the lower surface side during pick-up, which will be described later, it is difficult to create a trigger for peeling from the edge portion. There is a possibility that the effect of improving the pick-up property is hardly recognized or the effect is only slight.

When the ratio of the area S1 exceeds 45%, that is, when the die bond film 3 is excessively peeled off from the adhesive layer 2 during the cool expansion process, sufficient external stress is applied to the die bond film 3 through the adhesive layer 2. There is a possibility that the die bond film 3 cannot be cut cleanly, that a sufficient kerf width cannot be secured, or that the kerf width varies. Furthermore, there is a risk that the semiconductor chip 30a with the die bond film 3a may be unintentionally displaced or detached in subsequent manufacturing steps. Furthermore, in the pick-up process described below, when the excessively peeled die-bonding film is re-adhered to the adhesive layer 2, the re-adhesion area becomes excessively large, so that the adhesive layer 2 has an active energy that satisfies the requirements of the present invention. Even if it is composed of a line-curable adhesive composition, there is a risk that a large amount of energy will be required in order to peel it off by pushing up the dicing tape 10 from the lower surface side with a jig, corresponding to the increase in the large re-adhesion area. be. As a result, the pickup yield of the semiconductor chip 30a with the die bond film 3a is reduced.

In other words, the above-mentioned area S1 means that the edge portion of the die-bonding film 3a peeled off by expansion and the adhesive layer 2 exposed to the air and irradiated with ultraviolet rays under an aerobic condition are dicing in the next pick-up process. This is the area where the tape 10 is instantaneously re-fixed by the contact and landing of the suction collet before it is pushed up using a pushing up jig from the lower surface side of the tape 10. Therefore, when the ratio of the area S1 is in the range of 10% to 40%, die bond This facilitates the most effective reduction of the force required to peel off the edge portion of the semiconductor chip 30a with the film 3a attached. On the other hand, in the area S2 of the die-bonding film 3a that is in close contact with the adhesive layer 2 of the die-bonding film 3a where the ratio of the small pieces to the entire area of the die-bonding film 3a is in the range of 55% to 90%, the area of the adhesive layer 2 is Since the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment is adjusted to 0.25 N/25 mm or more and 0.70 N/25 mm or less, the adhesive layer 2 is applied to the center of the die-bonding film 3a following peeling of the edge portion. Peeling of the die-bonding film 3a from the surface is likely to progress. In the next pick-up process, the total energy required to peel the semiconductor chip 30a with the die-bonding film 3a from the adhesive layer 2 is the sum of the peeling force reduction effects in the area S1 and the area S2 described above. Therefore, in the dicing tape 10 of this embodiment, the total energy can be easily reduced compared to the conventional one in the balance between the ratio of the area S1 and the area S2.

The method for determining the ratio of the area S1 and the area S2 is not particularly limited, and can be determined by a conventionally known method. For example, an image obtained by microscopically observing the edge portion of the cut small piece die-bonding film 3a partially peeled off from the adhesive layer 2 of the dicing tape 10 from the back side of the semiconductor chip (base film side), You can use image processing software or the like to binarize the area corresponding to the area S1 and the area S2 and calculate the ratio of each area, or you can print the image on paper etc. and separate each area. Examples include a method of cutting out along the shape, measuring the mass, and calculating the area ratio of each part from the mass ratio.

Next, by irradiating the dicing tape 10 with active energy rays from the base film 1 side, the adhesive layer 2 is cured and shrunk, and the adhesive force of the adhesive layer 2 to the die bond film 3a is reduced ( Step S207 in FIG. 6: active energy ray irradiation step). Here, the active energy rays used for the above-mentioned post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β rays, γ rays, and the like. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferred, and ultraviolet rays (UV) are particularly preferably used. The light source for irradiating the ultraviolet rays (UV) is not particularly limited, but includes, for example, a black light, an ultraviolet fluorescent lamp, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a carbon arc lamp, a metal halide lamp, and a xenon lamp. A lamp etc. can be used. Furthermore, ArF excimer laser, KrF excimer laser, excimer lamp, synchrotron radiation, etc. can also be used. The amount of ultraviolet (UV) irradiation is not particularly limited, and is preferably in the range of 100 mJ/cm ² or more and 2,000 J/cm ² or less, and preferably in the range of 150 mJ/cm ² or more and 1,000 J/cm ² or less. It is more preferable that

Here, as described above, the dicing tape 10 of the present invention contains an active energy ray-curable adhesive composition containing an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond. When the adhesive layer 2 is irradiated with ultraviolet rays such that the cumulative amount of light is 150 mJ/cm ² under oxygen and anoxia, Adhesion strength after UV irradiation in the absence of oxygen to stainless steel plate (SUS304/BA plate) at 23°C in a range where adhesive strength A (peel angle: 90°, peeling speed: 300 mm/min) is 3.50 N/25 mm or less after UV irradiation The curing state of the adhesive layer 2 due to the crosslinking reaction is adjusted so that B (peel angle: 90°, peel speed: 300 mm/min) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less. Therefore, the force required to peel off the semiconductor chip 30a with the die-bonding film 3a from the adhesive layer 2 can be made smaller than in the past. As a result, in the pick-up process described later, the pick-up performance of the semiconductor chip 30a with the die-bonding film 3a is improved. In this case, the active energy ray-reactive carbon-carbon double bond concentration is preferably adjusted to a value within the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray-curable adhesive composition. It is.

Subsequently, a so-called pick-up process is performed in which each of the diced semiconductor chips 30a with die-bonding film (adhesive layer) 3a is peeled off from the adhesive layer 2 of the dicing tape 10 after being irradiated with ultraviolet (UV) light (see FIG. 6). Step S208: Peeling (pickup) step).

As shown in FIG. 9E, for example, as shown in FIG. 9E, the semiconductor chip 30a with the die bond film (adhesive layer) 3a, on which the suction collet 50 is brought into contact and landed, is placed on the dicing tape 10. By pushing up the second surface of the base film 1 with a push-up pin (needle) 60, peeling from the edge of the semiconductor chip 30a with the die-bonding film 3a is promoted, and as shown in FIG. Examples include a method of peeling off the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a from the adhesive layer 2 of the dicing tape 10 by suctioning and lifting it with a suction collet 50 of a pickup device (not shown). It will be done. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3a is obtained.

The pickup conditions are not particularly limited as long as they are within a practically acceptable range, and the thrusting speed of the thrusting pin (needle) 60 is usually set within a range of 1 mm/sec to 100 mm/sec. However, if the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm, the speed should be set within the range of 1 mm/sec to 20 mm/sec from the viewpoint of suppressing damage to the thin film semiconductor chip 30a. It is preferable. From the viewpoint of productivity, it is more preferable that the speed can be set within a range of 5 mm/sec or more and 20 mm/sec or less.

In addition, from the same viewpoint as above, it is preferable that the push-up height of the push-up pins at which the semiconductor chip 30a can be picked up without being damaged can be set within a range of 100 μm or more and 600 μm or less. From the viewpoint of reduction, it is more preferable that the thickness can be set within a range of 100 μm or more and 450 μm or less. From the viewpoint of productivity, it is particularly preferable that the thickness can be set within the range of 100 μm or more and 350 μm or less. It can be said that a dicing tape that can reduce the push-up height has excellent pick-up properties.

As explained above, the dicing tape 10 of the present invention, which is composed of the base film 1 and the adhesive layer 2, is applied to the die bond film (adhesive layer 2) on the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. When used in the form of a dicing die-bond film 20 in which the agent layer) 3 is laminated in close contact with each other in a peelable manner, a die-bond film with high fluidity and thickness such as a wire-embedded die-bond film is laminated and applied. Even in this case, the die bond film 3 is cut well by cool expansion, and the edge portion of the cut die bond film 3a is appropriately peeled from the adhesive layer 2 of the dicing tape 10. The peeled edge portion of the die-bonding film 3a of each cut semiconductor chip 30a with the die-bonding film 3a is applied to the adhesive layer 2 after UV irradiation by pushing up a jig from the lower surface of the dicing tape and suctioning it by a suction collet. - The phenomenon of strong re-adhesion to the extent that it cannot be easily peeled off even by lifting is significantly suppressed, and the semiconductor chip 30a with the die bond film 3a can be favorably picked up from the adhesive layer 2 of the dicing tape 10 after being irradiated with ultraviolet rays.

The manufacturing method explained in FIGS. 9(a) to 9(f) is an example (SDBG) of the manufacturing method of the semiconductor chip 30a using the dicing die bond film 20, and the dicing tape 10 is used in the form of the dicing die bond film 20. The methods used are not limited to those described above. That is, the dicing die bond film 20 of this embodiment can be used without being limited to the above method as long as it can be attached to the semiconductor wafer 30 during dicing.

Among them, the dicing tape 10 of the present invention is suitable as a dicing tape for use as a dicing die bond film 20 by integrating with a wire-embedded die bond film in a manufacturing method for obtaining a thin film semiconductor chip such as DBG, stealth dicing, SDBG, etc. It is. Of course, it is also possible to use it integrated with a general-purpose die bond film.

<Method for manufacturing semiconductor devices>
A semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that is an integrated dicing tape 10 and a die bond film 3 to which this embodiment is applied will be specifically described below.

The semiconductor device (semiconductor package) is manufactured by, for example, bonding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a described above to a support member for mounting a semiconductor chip or a semiconductor chip by heat-pressing, and then a wire bonding process and a sealing process. It can be obtained through a process such as a sealing process using a material.

FIG. 12 shows an example of a semiconductor device with a laminated structure mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a wire-embedded die bond film 3 to which this embodiment is applied. FIG. 3 is a schematic cross-sectional view of an embodiment. The semiconductor device 70 shown in FIG. 12 includes a semiconductor chip mounting support substrate 71, cured die bond films (adhesive layers) 3a1 and 3a2, a first-stage semiconductor chip 30a1, a second-stage semiconductor chip 30a2, A sealing material 75 is provided. The semiconductor chip mounting support substrate 71, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 76 for the semiconductor chip 30a2.

A plurality of external connection terminals 72 are arranged on one surface of the semiconductor chip mounting support substrate 71, and a plurality of terminals 73 are arranged on the other surface of the semiconductor chip mounting support substrate 71. The semiconductor chip mounting support substrate 71 has wires 74 for electrically connecting connection terminals (not shown) of the semiconductor chips 30a1 and 30a2 and external connection terminals 72. The semiconductor chip 30a1 is bonded to the semiconductor chip mounting support substrate 71 by a cured die bond film 3a1 in such a manner that the unevenness caused by the external connection terminals 72 is embedded. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 by a hardened die bond film 3a2. The semiconductor chip 30a1, the semiconductor chip 30a2, and the wire 74 are sealed with a sealant 75. In this way, the wire-embedded die-bonding film 3a is suitably used in a semiconductor device having a laminated structure in which a plurality of semiconductor chips 30a are stacked.

Further, FIG. 13 shows one aspect of another semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a general-purpose die bond film 3 to which this embodiment is applied. FIG. A semiconductor device 80 shown in FIG. 13 includes a semiconductor chip mounting support substrate 81, a cured die bond film 3a, a semiconductor chip 30a, and a sealing material 85. The semiconductor chip mounting support substrate 81 is a support member for the semiconductor chip 30a, and has connection terminals (not shown) of the semiconductor chip 30a and external connection terminals (not shown) arranged on the main surface of the semiconductor chip mounting support substrate 81. (not shown) has a wire 84 for electrical connection. The semiconductor chip 30a is bonded to a semiconductor chip mounting support substrate 81 using a hardened die bond film 3a. The semiconductor chip 30a and the wire 7 are sealed with a sealing material 85.

The present invention will be explained in more detail with reference to the following examples, but the present invention is not limited thereto.

1. Production of Base Film 1 The following resins were prepared as materials for producing base films 1(a) to 1(k).

(Thermoplastic crosslinked resin (A) consisting of an ionomer of ethylene/unsaturated carboxylic acid copolymer)
・Resin (IO1)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 60 mol%, melting point: 86°C, MFR: 1 g/ 10 minutes (190℃/2.16kg load), density: 0.96g/ ^cm3
・Resin (IO2)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 70 mol%, melting point: 87°C, MFR: 1 g/ 10 minutes (190℃/2.16kg load), density: 0.96g/ ^cm3

(Polyamide resin (B))
・Resin (PA1)
Nylon 6, melting point: 225°C, density: 1.13g/ ^cm3

(Other resins (C))
・Resin (TPO)
Thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer)
・Resin (POPE)
Polyolefin-polyether block copolymer (polymer type antistatic agent), melting point: 115°C, MFR: 15g/10 minutes (190°C/2.16kg load)
・Resin (PP)
Random copolymerized polypropylene, melting point 138°C
・Resin (EVA)
Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94g/cm ³

(Base film 1(a))
(IO1) was prepared as a thermoplastic crosslinked resin (A) consisting of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, the thermoplastic crosslinked resin (A) made of the ionomer (IO1) and the polyamide resin (B) (PA1) were dry blended at a mass ratio of (A):(B) = 95:5. Next, the dry blended mixture was charged into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for base film 1(a). The obtained resin composition was put into each extruder using a 3-layer T-die film molding machine of 1 type (same resin) and molded at a processing temperature of 240°C to form 3 layers of the same resin composition. A base film 1(a) having a thickness of 90 μm was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 95:5.

(Base film 1(b))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 90:10. In the same manner as the base film 1(a), a 90 μm thick base film 1(b) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 90:10.

(Base film 1(c))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 85:15. In the same manner as the base film 1(a), a 90 μm thick base film 1(c) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 85:15.

(Base film 1(d))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 80:20. In the same manner as the base film 1(a), a 90 μm thick base film 1(d) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 80:20.

(Base film 1(e))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 72:28. In the same manner as the base film 1(a), a 90 μm thick base film 1(e) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 72:28.

(Base film 1(f))
The thermoplastic crosslinked resin (A) consisting of the above ionomer (IO1), the polyamide resin (B) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) and polyolefin-polyether block copolymer (POPE) were prepared. First, as resins for the first layer and the second layer, the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) are used (A): (B) = Dry blending was performed at a mass ratio of 90:10. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and second layers of the base film 1 (g). I got something. In addition, as the resin for the third layer, thermoplastic crosslinked resin (A) made of ionomer = (IO1), polyamide resin (B) = (PA1), thermoplastic polyolefin elastomer (TPO), and polyolefin-polyether block copolymer. The polymers (POPE) were dry blended at a mass ratio of 76:8:8:8. Next, the dry blended mixture was charged into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for the third layer of the base film 1(f). . The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1(f) having a three-layer structure and having a thickness of 80 μm was produced using the composition. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=30 μm/30 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 90:10. Further, the total content of resin (A) and resin (B) in the entire layer was 95% by mass.

(Base film 1 (g))
The thermoplastic crosslinked resin (A) consisting of the above ionomer (IO1), the polyamide resin (B) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) was prepared. First, as resins for the first layer and the third layer, the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) are used, (A): (B) = Dry blending was performed at a mass ratio of 85:15. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and third layers of the base film 1 (g). I got something. Further, as the resin for the second layer, the above thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) = (TPO) was used alone. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1 (g) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 85:15. Further, the total content of resin (A) and resin (B) in the entire layer was 67% by mass.

(Base film 1 (h))
(IO1) and (IO2) were prepared as the thermoplastic crosslinked resin (A) consisting of the above ionomer, and (PA1) was prepared as the polyamide resin (B). First, as resins for the first layer and the third layer, the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) are used, (A): (B) = Dry blending was performed at a mass ratio of 90:10. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and third layers of the base film 1 (h). I got something. Further, as the resin for the second layer, (IO2) was used alone as the thermoplastic crosslinked resin (A) consisting of the above-mentioned ionomer. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1 (g) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 93:7.

(Base film 1(i))
(IO1) was prepared as a resin (A) consisting of an ionomer. A three-layer structure made of the same resin composition (only resin (A) consisting of ionomer) was prepared in the same manner as base film 1(a) except that amide resin (B) = (PA1) was not dry blended. A base film 1(i) with a thickness of 90 μm was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm.

(Base film 1(j))
The base film 1 (g ), a base film 1 (j) with a thickness of 90 μm and having a three-layer structure made of two types of resin compositions was produced. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 90:10. Further, the total content of resin (A) and resin (B) in the entire layer was 44% by mass.

(Base film 1(k))
(PP) and (EVA) were also prepared as other resins (C). (PP) was used as the resin for the first and third layers, and (EVA) was used as the resin for the second layer. Two types (two types of resin) of each resin were used in a three-layer T-die film molding machine. The samples were put into respective extruders and molded at a processing temperature of 150° C. to produce a base film 1(k) having a three-layer structure of two types of resin compositions and having a thickness of 80 μm. The thickness of each layer was 1st layer (side in contact with the adhesive layer)/2nd layer/3rd layer=8 μm/64 μm/8 μm.

[Elastic modulus of base film at 5% elongation]
The elastic modulus Y _MD at 5% elongation in the MD direction and the elastic modulus Y _TD at 5% elongation in the TD direction of the base film 1 at 0° C. were measured by the following method. First, a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was used as a sample for MD direction measurement (number of samples N = 5), and a test piece was used as a sample for TD direction measurement (number of samples N = 5). Test pieces each having a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared. Next, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were fixed with chucks so that the initial distance between the chucks was 20 mm, and the test piece was After being placed at 0° C. for 1 minute in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Inc., a tensile test was conducted at a speed of 100 mm/min, and the tensile load-elongation curve was measured. Then, from the obtained tensile load-elongation curve, the origin (extension start point) and the tensile load value on the curve corresponding to the 1.0 mm elongation from the origin (5% elongation with respect to the initial distance between chucks 20 mm) ( The slope of the straight line connecting the points (unit: N) was calculated, and the elastic modulus Y at 5% elongation (unit: MPa) was determined using the above-mentioned formula. Measurements were performed in each direction using N=5 samples, and the average values were defined as the elastic modulus at 5% elongation _YMD in the MD direction and the elastic modulus at 5% elongation _YTD in the TD direction. Using these values, the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 formed above was calculated.

The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0°C of the base films 1(a) to 1(k) used as the base film 1 of the dicing tape 10 of Examples and Comparative Examples is , as shown in Tables 1 to 9, respectively.

2. Preparation of adhesive composition solution
Solutions of the following active energy ray-curable acrylic adhesive compositions 2(a) to 2(u) were prepared as adhesive compositions for the adhesive layer 2 of the dicing tape 10.
In addition, as a copolymerization monomer component constituting the base polymer (acrylic acid ester copolymer) of these adhesive compositions,
・2-ethylhexyl acrylate (2-EHA, molecular weight: 184.3, Tg: -70°C),
・2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15°C),
・Methacrylic acid (MAA, molecular weight: 86.06: Tg: 228°C),
prepared.

In addition, as a polyisocyanate crosslinking agent, a TDI type polyisocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, solid content concentration: 45% by mass, isocyanate group content in solution: 8. 05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups: average 2.8 pieces/1 molecule, theoretical molecular weight: 656.64),
・HDI-based polyisocyanate crosslinking agent (trade name: Coronate HL, solid content concentration: 75% by mass, isocyanate group content in solution: 12.8% by mass, isocyanate group content in solid content: 17.07 Mass %, calculated number of isocyanate groups: average 2.6/1 molecule, theoretical molecular weight: 638.75),
prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(a))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MMA=81.5 parts by mass/17.5 parts by mass/1.0 parts by mass (=442.21 mmol/150.71 mmol/11.62 mmol). A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was prepared by solution radical polymerization using ethyl acetate as a solvent and azobisisobutyronitrile (AIBN) as an initiator. Synthesized. The Tg of the obtained base polymer calculated from the Fox equation is -61°C.

Next, to 100 parts by mass of the solid content of this base polymer, an active energy ray-reactive compound manufactured by Showa Denko K.K. was added with an isocyanate group and an active energy ray-reactive carbon-carbon double bond (manufactured by Showa Denko K.K.). 2-Isocyanate ethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 piece/1 molecule, double bond group: 1 piece/1 molecule) 19.2 parts by mass (123.75 mmol: 82.11 mol% based on 2-HEA) and reacted with a part of the hydroxyl groups of 2-HEA to form a solution of acrylic adhesive polymer (A) having a carbon-carbon double bond in the side chain ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 330,000, solid content hydroxyl value: 12.7 mgKOH/g, solid content acid value: 5.5 mgKOH/g, carbon-carbon double bond content: 1.04 meq /g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, IGM Resins B. V. 4.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B. V. 0.8 parts by mass of a benzyl methyl ketal photopolymerization initiator (trade name: Omnirad 651) manufactured by IGM Resins B. V. 1.0 parts by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad 379EG) manufactured by IGM Resins B. V. 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation, and an HDI-based polyisocyanate crosslinking agent (trade name: Coronate HL, solid content manufactured by Tosoh Corporation) as a crosslinking agent. Concentration: 75% by mass) was blended at a ratio of 5.5 parts by mass (4.1 parts by mass in terms of solid content, 7.65 mmol), diluted with ethyl acetate, and stirred to obtain an active product with a solid concentration of 22% by mass. A solution of energy ray curable acrylic adhesive composition 2(a) was prepared. As shown in Table 1, in active energy ray-curable acrylic adhesive composition 2(a), the isocyanate group (NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer are The equivalent ratio (NCO/OH) was 0.74, the residual hydroxyl group concentration was 0.06 mmol/g, and the carbon-carbon double bond concentration was 1.00 meq/g.

(Solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u))
For the acrylic adhesive polymer (A), the copolymerization ratio of the copolymerization monomer components, the blending amount of the active energy ray-reactive compound, and the copolymerization monomer components were adjusted as shown in Tables 4, 5, and 9, respectively. By changing the method, solutions of acrylic adhesive polymers (B) to (G) were synthesized. The base polymer Tg, weight average molecular weight Mw, acid value, and hydroxyl value of the synthesized acrylic adhesive polymers (B) to (G) are as shown in Tables 4, 5, and 9, respectively. Next, using these acrylic adhesive polymer solutions, the solutions shown in Tables 3 to 6, 8, and 9 were prepared based on 100 parts by mass of the acrylic adhesive polymers (A) to (G) in terms of solid content. Solutions of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u) were prepared by appropriately blending a photopolymerization initiator and a polyisocyanate crosslinking agent as described above. Equivalent ratio of the isocyanate group (NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer in active energy ray-curable acrylic adhesive compositions 2(b) to 2(u) (NCO/OH), residual hydroxyl group concentration, and carbon-carbon double bond group concentration are as shown in Tables 3 to 6, 8, and 9, respectively.

3. Preparation of Solutions of Adhesive Compositions Solutions of the following adhesive compositions 3(a) to 3(d) were prepared as adhesive compositions for the die bond film (adhesive layer) 3 of the dicing die bond film 20.

(Solution of adhesive composition 3(a))
A solution of the following adhesive composition solution 3(a) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 26 parts by mass of bisphenol type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd., and cresol novolac type epoxy resin manufactured by Toto Kasei Co., Ltd. 36 parts by mass of resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C), phenol resin manufactured by Mitsui Chemicals, Inc. (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, softening) as a crosslinking agent point: 77°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 1 part by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 25 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C) , water absorption rate: 1% by mass, heating mass reduction rate: 3% by mass) 12 parts by mass, silica filler dispersion manufactured by Admatex Co., Ltd. (trade name: SC2050-HLG, average particle size: 0.50 μm) as an inorganic filler 15 parts by mass, 14 parts by mass of silica filler dispersion (trade name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatex Co., Ltd., silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle Cyclohexanone was added as a solvent to a resin composition consisting of 1 part by mass (diameter: 0.016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content) was added to the resin composition as a thermoplastic resin. : 8% by mass, weight average molecular weight Mw: 230,000, Tg: -7°C) 37 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (product name: HTR-860P-) 3CSP, glycidyl (meth)acrylate content: 3% by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 9 parts by mass, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation as a silane coupling agent. (Product name: NUC A-1160) 0.7 parts by mass, GE Toshiba Corporation's γ-ureidopropyltriethoxysilane (Product name: NUC A-189) 0.3 parts by mass, and Shikoku Kasei as a curing accelerator. Add 0.03 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazole 2PZ-CN) manufactured by Co., Ltd., stir and mix, filter through a 100 mesh filter, and vacuum degas to give a solid content concentration of 20. A solution of adhesive composition 3(a) in % by weight was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 Mass %: 42.5 mass %: 26.0 mass %. Further, the content of the inorganic filler was 20.5% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(b))
A solution of the following adhesive composition solution 3(b) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 21 parts of bisphenol F type epoxy resin (trade name: YDF-8170C, epoxy equivalent: 159, molecular weight: 310, liquid at room temperature) manufactured by Toto Kasei Co., Ltd., and cresol manufactured by Toto Kasei Co., Ltd. 33 parts by mass of novolac type epoxy resin (product name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C), phenol resin manufactured by Air Water Co., Ltd. (product name: HE200C-10, hydroxyl equivalent: 200, Softening point: 71°C, Water absorption: 1% by mass, Heating mass reduction rate: 4% by mass) 46 parts by mass, Silica filler dispersion manufactured by Admatex Co., Ltd. (trade name: SC1030-HJA, average) as an inorganic filler Cyclohexanone was added as a solvent to a resin composition consisting of 18 parts by mass (particle size: 0.25 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content) was added to the resin composition as a thermoplastic resin. : 8% by mass, weight average molecular weight Mw: 230,000, Tg: -7°C) 16 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (product name: HTR-860P-) 3CSP, glycidyl (meth)acrylate content: 3% by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 64 parts by mass, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation as a silane coupling agent. (Product name: NUC A-1160) 1.3 parts by mass, 0.6 parts by mass of γ-ureidopropyltriethoxysilane (Product name: NUC A-189) manufactured by GE Toshiba Corporation, and Shikoku Kasei as a curing accelerator. Add 0.05 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazol 2PZ-CN) manufactured by Co., Ltd., stir and mix, filter through a 100 mesh filter, and vacuum degas to give a solid content concentration of 20. A solution of adhesive composition 3(b) in % by weight was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 44.4 Mass %: 30.0 mass %: 25.6 mass %. Further, the content of the inorganic filler was 10.0% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(c))
A solution of the following adhesive composition solution 3(c) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 11 parts by mass of bisphenol-type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Corporation, and dicyclopentadiene-type epoxy resin manufactured by DIC Corporation. Resin (product name: HP-7200H, epoxy equivalent weight 280, softening point 83°C) 40 parts by mass, bisphenol S type epoxy resin manufactured by DIC Corporation (product name: EXA-1514, epoxy equivalent weight 300, softening point 75°C) 18 Parts by mass, phenolic resin manufactured by Mitsui Chemicals Co., Ltd. as a crosslinking agent (product name: Mirex XLC-LL, hydroxyl equivalent: 175, softening point: 77°C, water absorption: 1% by mass, heating mass reduction rate: 4% by mass) 1 part by mass, 20 mass of phenolic resin manufactured by Air Water Co., Ltd. (product name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 10 parts by mass of phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C, water absorption: 1% by mass, heating mass reduction rate: 3% by mass), As inorganic fillers, 24 parts by mass of silica filler dispersion (product name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatex Co., Ltd., silica (product name: Aerosil R972, average particle size) manufactured by Nippon Aerosil Co., Ltd. Cyclohexanone was added as a solvent to a resin composition consisting of 0.8 parts by mass (0.016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content) was added to the resin composition as a thermoplastic resin. : 8% by mass, weight average molecular weight Mw: 230,000, Tg: -7°C) 30 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (product name: HTR-860P-) 3CSP, glycidyl (meth)acrylate content: 3% by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 7.5 parts by mass, γ-ureidopropyl tritriate manufactured by GE Toshiba Corporation as a silane coupling agent. 0.57 parts by mass of ethoxysilane (product name: NUC A-1160), 0.29 parts by mass of γ-ureidopropyltriethoxysilane (product name: NUC A-189) manufactured by GE Toshiba Corporation, and as a curing accelerator. Add 0.023 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazol 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd., stir and mix, filter through a 100 mesh filter, and vacuum degas to remove solid content. A solution of adhesive composition 3(c) with a concentration of 20% by mass was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 27.3 Mass %: 50.2 mass %: 22.5 mass %. Further, the content of the inorganic filler was 18.0% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(d))
A solution of the following adhesive composition 3(d) was prepared for use in a general-purpose die bond film. First, 54 parts by mass of a cresol novolac type epoxy resin (trade name: YDCN-700-10, epoxy equivalent weight 210, softening point 80°C) manufactured by Toto Kasei Co., Ltd. as a thermosetting resin, and a crosslinking agent manufactured by Mitsui Chemicals Co., Ltd. 46 parts by mass of phenol resin (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, water absorption rate: 1.8%), silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size 0.5%) as an inorganic filler. Cyclohexanone was added as a solvent to a resin composition consisting of 32 parts by mass of 016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-3CSP, glycidyl (meth)acrylate content: 3) was added to the resin composition as a thermoplastic resin. % by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 274 parts by mass, γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent5. 0 parts by mass, 1.7 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by GE Toshiba Corporation, and 1-cyanoethyl-2-phenyl manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. Add 0.1 part by mass of imidazole (trade name: Curazole 2PZ-CN), stir and mix, filter through a 100 mesh filter, and vacuum deaerate to obtain adhesive composition 3(d) with a solid content concentration of 20% by mass. A solution was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 Mass %: 14.4 mass %: 12.3 mass %. Further, the content of the inorganic filler was 8.6% by mass based on the total amount of resin components.

4. Production of dicing tape 10 and dicing die bond film 20 (Example 1)
The active energy ray-curable acrylic adhesive composition (a) was applied on the release-treated side of the release liner (thickness: 38 μm, polyethylene terephthalate film) so that the thickness of the adhesive layer 2 after drying was 8 μm. After drying the solvent by applying the solution and heating at a temperature of 100° C. for 3 minutes, the surface of the first layer side of the base film 1 (a) is bonded onto the adhesive layer 2, and the dicing tape 10 The original fabric was prepared. Thereafter, the original fabric of the dicing tape 10 was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer 2.

Next, a solution of the adhesive composition 3(a) for forming the die bond film (adhesive layer) 3 is prepared, and the dried die bond film ( A solution of the above adhesive composition 3(a) was applied so that the thickness of the adhesive layer) 3 was 50 μm, and then the solution was heated at a temperature of 90°C for 5 minutes, and then at a temperature of 140°C for 5 minutes. The solvent was dried by heating in two stages to produce a die bond film (adhesive layer) 3 provided with a release liner. Note that, if necessary, a protective film (for example, a polyethylene film, etc.) may be attached to the dry side of the die-bonding film (adhesive layer) 3.

Subsequently, the die bond film (adhesive layer) 3 provided with the release liner prepared above was cut into a circular shape with a diameter of 335 mm together with the release liner, and the adhesive layer exposed surface (release The liner-free surface) was attached to the two adhesive layer surfaces of the dicing tape 10 from which the release liner had been peeled off. The bonding conditions were 23° C., 10 mm/sec, and a linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 into a circle with a diameter of 370 mm, a circular die-bonding film (adhesive layer) 3 with a diameter of 335 mm is laminated on the upper center of the adhesive layer 2 of the circular dicing sheet 10 with a diameter of 370 mm. A dicing die bond film 20 (DDF(a)) was prepared.

(Examples 2 to 8)
A dicing die bond film 20 (DDF ( b) to DDF (h)) were produced.

(Examples 9 to 23)
A solution of active energy ray-curable acrylic adhesive composition 2(a) was added to a solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(p) shown in Tables 3 to 6, respectively. Dicing die bond films 20 (DDF(i) to DDF(w)) were produced in the same manner as in Example 2 except for the changes.

(Example 24)
All steps were carried out except that the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(b) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 30 μm. A dicing die bond film 20 (DDF(x)) was produced in the same manner as in Example 2.

(Example 25)
A dicing die bond film 20 (DDF(y)) was produced in the same manner as in Example 2 except that the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(c).

(Example 26)
All steps were carried out except that the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(d) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 20 μm. A dicing die bond film 20 (DDF(z)) was produced in the same manner as in Example 2.

(Comparative example 1)
Substrate film 1(a) was changed to substrate film 1(i), and the solution of active energy ray-curable acrylic adhesive composition 2(a) was added to the active energy ray-curable acrylic adhesive shown in Table 8. Dicing was carried out in the same manner as in Example 1 except that the solution of adhesive composition 2(q) was changed and the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(c). A die bond film 20 (DDF (aa)) was produced.

(Comparative example 2)
All comparative examples except that the base film 1(a) was changed to the base film 1(j) and the solution of adhesive resin composition 3(c) was changed to the solution of adhesive composition 3(a). A dicing die bond film 20 (DDF (bb)) was produced in the same manner as in Example 1.

(Comparative example 3)
A dicing die bond film 20 (DDF (cc)) was produced in the same manner as Comparative Example 2 except that the base film 1 (a) was changed to the base film 1 (k).

(Comparative example 4)
Comparative Example 1 except that the solution of active energy ray curable acrylic adhesive composition 2 (q) was changed to the solution of active energy ray curable acrylic adhesive composition 2 (r) shown in Table 8. A dicing die bond film 20 (DDF(dd)) was produced in the same manner as above.

(Comparative Examples 5 to 7)
The solution of active energy ray-curable acrylic adhesive composition 2(a) was changed to the solutions of active energy ray-curable acrylic adhesive compositions 2(s) to 2(u) shown in Table 9, respectively. Dicing die bond films 20 (DDF(ee) to DDF(gg)) were produced in the same manner as in Example 2 except for the above.

5. Measurement of the adhesive strength of the dicing tape after UV irradiation and the shear viscosity of the die bond film The adhesive strength of the dicing tape 10 after UV irradiation and the shear viscosity of the die bond film 3 produced in Examples 1 to 26 and Comparative Examples 1 to 7 are as follows. Measured using the method shown.

5.1 Measurement of the adhesive strength of the adhesive layer 2 of the dicing tape 10 after irradiation with oxygen-free ultraviolet rays and the adhesive strength of the adhesive layer 2 of the dicing tape 10 against the die-bonding film (adhesive layer) 3 after irradiation with anoxic ultraviolet rays Above examples For the dicing tapes 10 prepared in Examples 1 to 26 and Comparative Examples 1 to 7, the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen conditions and the adhesive strength B after irradiation with ultraviolet rays under anaerobic conditions were measured by the following method.

5.1.1 Adhesion strength A after irradiation with ultraviolet light under aerobic conditions
First, the dicing tape 10 was cut into a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated using a metal halide lamp from the second side of the adhesive layer of the dicing tape 10 from which the release liner has been peeled off (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) After that, the dicing tape 10 was applied to the stainless steel plate (SUS304/BA plate) from the edge of the two adhesive layers using a rubber roller weighing 2 kg in an environment of a temperature of 23°C and a humidity of 50% RH. A rubber roller was moved back and forth once at a speed of about 5 mm/sec to neatly press and bond the pieces together to obtain a test piece for measurement. After standing still for 20 minutes, the test piece was examined using a stainless steel plate (SUS304/BA plate) in an environment with a temperature of 23°C and a humidity of 50% RH, using an adhesive/film peeling analyzer of the flexible peeling angle type shown in Figure 4. ) The adhesive strength (unit: N/25 mm) of the dicing tape 10 at a peeling angle of 90° was measured. The peeling speed was 300 mm/min. The measurement was performed on three test pieces, and the average value of the three test pieces was taken as the adhesive strength A of the dicing tape 10 after irradiation with ultraviolet rays under aerobic conditions.

5.1.2 Adhesive strength B after UV irradiation in anoxic environment
First, the dicing tape 10 was cut into a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, a stainless steel plate (SUS304/BA plate) was heated at a temperature of 23° C. and a humidity of 50% RH using a rubber roller weighing 2 kg from the end of the adhesive layer 2 of the dicing tape 10 from which the release liner had been peeled off. A rubber roller was moved back and forth at a speed of about 5 mm/sec in an environment to neatly press and bond the pieces together. After standing still for 20 minutes, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) This was used as a test piece for measurement. The test piece was diced onto a stainless steel plate (SUS304/BA plate) using the adhesive/film peeling analyzer of the flexible peeling angle type shown in Fig. 4 in the same way as the measurement of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions described above. The adhesive strength (unit: N/25 mm) of the tape 10 was measured at a peeling angle of 90°. The peeling speed was 300 mm/min. The measurement was performed on three test pieces, and the average value of the three test pieces was taken as the adhesive strength B of the dicing tape 10 after irradiation with ultraviolet rays under anoxic conditions.

Furthermore, the ratio A/B of the adhesive force A of the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays under oxidation to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions was calculated using the measured value of the adhesive force.

5.2 Measurement of shear viscosity at 80°C of die bond film (adhesive layer) 3 For each die bond film (adhesive layer) 3 film formed from the solution of adhesive compositions 3(a) to 3(d), The shear viscosity at 80°C was measured by the method below.
A laminate was prepared by laminating a plurality of die bond films (adhesive layer) 3 from which the release liner had been removed at 70° C. so that the total thickness was 200 to 210 μm. Next, the laminate was punched out in the thickness direction into a size of 10 mm x 10 mm to obtain a measurement sample. Subsequently, using a dynamic viscoelasticity device ARES (manufactured by Rheometric Scientific F.E.), a circular aluminum plate jig with a diameter of 8 mm was attached, and then a measurement sample was set. While applying 5% strain to the measurement sample at 35°C, the shear viscosity was measured while raising the temperature of the measurement sample at a heating rate of 5°C/min, and the shear viscosity value at 80°C was determined.

Tables 1 to 9 show the respective structures and measurement results of the dicing tapes 10 and dicing die bond films 20 produced in Examples 1 to 26 and Comparative Examples 1 to 7.

6. Mounting evaluation of dicing tape The dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7 were tested in the following manner in the form of dicing die bond films 20 (DDF(a) to DDF(gg)). We conducted an evaluation.

6.1 Cutting property of die bond film (adhesive layer) First, a semiconductor wafer (silicon mirror wafer, thickness 750 μm, outer diameter 12 inches) W was prepared, and a commercially available backgrind tape was attached to one side. Next, a stealth dicing laser saw (equipment name: DFL7361) manufactured by DISCO Co., Ltd. was used to cut the semiconductor wafer W from the side opposite to the side to which the backgrind tape was attached, until the size of the semiconductor chips 30a after cutting was 4. A modified region is formed at a predetermined depth position on the semiconductor wafer W by irradiating laser light along the lattice-shaped dicing line under the following conditions so that the size is 6 mm x 7.2 mm. 30b was formed.

・Laser irradiation conditions (1) Laser oscillator type: semiconductor laser excitation Q-switch solid-state laser
(2) Wavelength: 1342nm
(3) Oscillation format: pulse
(4) Frequency: 90kHz
(5) Output: 1.7W
(6) Moving speed of semiconductor wafer mounting table: 700 mm/sec

Next, using a back grinding device (device name: DGP8761) manufactured by DISCO Co., Ltd., the semiconductor wafer W having a thickness of 750 μm and having the modified region 30b held on the back grinding tape is ground and thinned. As a result, semiconductor chips 30a having a thickness of 30 μm were obtained. Subsequently, the cutability of the die bond film (adhesive layer) was evaluated by performing a cool expand process using the following method. Specifically, the surface of the semiconductor chip 30a having a thickness of 30 μm opposite to the side to which the back grinding tape was attached was exposed by peeling off the release liner from the dicing die bond film 20 produced in each example and comparative example. The dicing die bond film 20 is laminated onto the semiconductor chip 30a using a laminating device manufactured by DISCO Co., Ltd. (device name: DFM2800) so that the die bond film 3 is in close contact with the semiconductor chip 30a at a lamination temperature of 70° C. and a lamination speed of 10 mm/sec. At the same time, a ring frame (wafer ring) 40 was attached to the exposed portion of the adhesive layer 2 at the outer edge of the dicing tape 10, and then the back grind tape was peeled off. Here, the dicing die-bonding film 20 is arranged in the MD direction of the base film 1 and in the vertical line direction of the lattice-like dividing line of the semiconductor chip 30a (TD direction of the base film 1 and the lattice-like dividing line of the semiconductor chip 30a). It is attached to the semiconductor chip 30a so that the horizontal line direction of the lines coincides with each other.

A laminate (semiconductor wafer 30/die bond film 3/adhesive layer 2/base film 1) containing the semiconductor chip 30a held on the ring frame (wafer ring) 40 is expanded using an expanding device manufactured by DISCO Co., Ltd. (device name: DDS2300 Fully Automatic Die Separator). Next, the die bond film 3 was cut by cool expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die bond film 20 with the semiconductor chip 30a under the following conditions. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained. In this example, the cool expansion process was carried out under the following conditions, but the expansion conditions ("expanding speed", "expanding amount", etc.) were adjusted as appropriate depending on the physical properties of the base film 1, temperature conditions, etc. A cool expansion process may be performed.

・Cool expansion process conditions Temperature: -15℃, Cooling time: 80 seconds,
Expanding speed: 300mm/sec,
Expand amount: 11mm,
(4) Standby time: 0 seconds

The cool-expanded die-bonding film (adhesive layer) 3 was observed from the surface side of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation at a magnification of 200 times, and was then cut. The number of uncut sides among the planned sides was measured. Then, from the total number of sides scheduled to be cut and the total number of uncut sides, the ratio of the number of cut sides to the total number of sides scheduled to be cut was calculated as a cutting rate (%). The observation using the optical microscope was performed on all the semiconductor chips 30a with the die-bonding film 3a. The breakability of the die-bonded film (adhesive layer) 3 was evaluated according to the following criteria, and an evaluation of B or higher was judged as having good breakability.

A: The fracture rate was 95% or more and 100% or less.
B: The fracture rate was 90% or more and less than 95%.
C: The fracture rate was 85% or more and less than 90%.
D: Fracture rate was less than 85%.

6.2 Checking the presence or absence of peeling of the edge portion of the die bond film and calculating the ratio of the area S1 of the edge portion of the die bond film peeled from the adhesive layer After releasing the above cool expand state, use Expand Expand manufactured by DISCO Co., Ltd. again. Using an apparatus (equipment name: DDS2300 Fully Automatic Die Separator), a room temperature expansion process was carried out in its heat expander unit under the following conditions.

・Condition temperature of room temperature expansion process: 23℃,
Expanding speed: 30mm/sec,
Expand amount: 9mm,
(4) Waiting time: 15 seconds

Next, while maintaining the expanded state, the dicing tape 10 was suctioned by a suction table, and the suction table was lowered together with the workpiece while maintaining the suction by the suction table. Then, a heat shrink process was performed under the following conditions to heat shrink the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area.

・Conditions for heat shrink process Hot air temperature: 200℃,
Air volume: 40L/min,
Distance between hot air outlet and dicing tape 10: 20 mm,
Stage rotation speed: 7°/sec

Subsequently, after the dicing tape 10 is released from suction by the suction table, the die bond film (adhesive layer) 3 is peeled off from the adhesive layer 2 of the dicing tape 10 around the four sides of each cut semiconductor chip. The state was observed from the back side (base film 1 side) of the semiconductor chip 30a using an optical microscope (model: VHX-1000, manufactured by Keyence Corporation) at a magnification of 50 times. Since the state of peeling of the die bond film (adhesive layer) 3 was observed to be almost the same on the semiconductor chip 30a at any position, the presence or absence of peeling was confirmed by checking the peeling state of the die bond film (adhesive layer) 3 at a predetermined 20 mm located at the center of the semiconductor wafer 30. The test was performed on semiconductor chips 30a with die bond films 3a. Further, the ratio of the area S1 was calculated by the following method. First, any three semiconductor chips 30a with die-bonding films 3a are selected from among the 20 semiconductor chips 30a with die-bonding films 3a, and the images observed on each are processed using the image processing software "ImageJ" (https://imagej.Nih.gov/ij/ The portion corresponding to the area S1 and the portion corresponding to the area S2 were binarized using the software (available from ). Using the binarized image processing image, the ratio of the area S1 of the edge portion of the small piece of die-bonding film 3a peeled from the adhesive layer 2 to the area of the entire small piece of die-bonding film 3a (=S1+S2) was determined for three measurements. It was calculated as an average value.

6.3 Pick-up property Irradiation intensity was 70 mW/cm ² from the base film 1 side of the dicing tape 10 holding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a that was cut and separated into pieces by the above expanding process. An evaluation sample was prepared by curing the adhesive layer 2 by irradiating ultraviolet rays (UV) with a center wavelength of 367 nm so that the cumulative light amount was 150 mJ/cm ² .

Subsequently, a pick-up test was conducted on the semiconductor chip 30a with the die bond film 3a using a device (device name: die bonder DB-830P) having a pick-up mechanism manufactured by Fasford Technology Co., Ltd. (formerly Hitachi High-Technologies Co., Ltd.). . The size of the pickup collet is 4.5 x 7.1 mm, the number of push-up pins is 12, and the pickup conditions are: the push-up speed of the push-up pin is 5 mm/sec, the push-up height of the push-up pin is 300 μm, They were 200 μm and 150 μm. The number of samples for the pick-up try was set at 20 pieces (chips) at predetermined positions, which were picked up continuously and the number of pieces picked up successfully was counted. The pick-up performance of the semiconductor chip 30a with the die-bonding film 3a at each push-up height was evaluated according to the following criteria.

A: 20 chips were picked up continuously, and the number of chips without chip cracking or pick-up errors (number of successfully picked up chips) was 19 or more and 20 or less (success rate of 95% or more and 100% or less).
B: 20 chips were picked up continuously, and the number of chips without chip cracking or pick-up errors (number of successfully picked up chips) was 17 or more and less than 19 (success rate of 85% or more and less than 95%).
C: 20 chips were picked up continuously, and the number of chips without chip cracking or pickup errors (number of successfully picked up chips) was less than 17 (success rate of less than 85%).

As for the overall evaluation of the above-mentioned pickup test, the smaller the amount of push-up height of the push-up pins for which the evaluation of the number of semiconductor chips 30a with die-bonding film 3a that was successfully picked up is A or B, the more the dicing tape 10 is used. It was judged that the pickup property was better.

6.3. Evaluation Results Tables 10 to 18 show the results of packaging evaluation in the form of dicing die bond films 20 (DDF(a) to DDF(gg)) for each dicing tape 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7. Shown below.

As shown in Tables 10 to 16, the adhesive layer 2 includes base films 1(a) to 1(h) and adhesive compositions 2(a) to 2(p) that meet the requirements of the present invention. The dicing die bond films 20 of Examples 1 to 26 (DDF Regarding (a) to DDF(z)), when used in the manufacturing process of semiconductor devices, the die bond film 3 is cut well by cool expansion, and the cut die bond film 3a has its edge portions (four periphery part) is moderately peeled from the adhesive layer 2 of the dicing tape 10, and the adhesive force A after irradiation with ultraviolet light under oxygen conditions is significantly reduced, so that when picking up, the adhesive layer 2 is peeled off from the adhesive layer 2 of the dicing tape 10. The phenomenon in which the edge portion of the peeled die-bonding film 3 is strongly re-adhered to the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays is greatly suppressed, and the adhesive of the semiconductor chip 30a with the dicing die-bonding film 3a due to push-up is suppressed. It was confirmed that peeling from layer 2 progressed smoothly from the edge portion, and favorable results were obtained in the evaluation of pick-up properties.

When comparing Examples in detail, the dicing die bond films of Examples 2 to 4, Example 6, Example 8, Examples 10, 11, Examples 14 to 16, Examples 21, 22, and Examples 24 to 26 Regarding No. 20, it was found that both the breakability and the pick-up performance of the die-bonding film 3 were compatible at a high level in the evaluation, and that it was particularly excellent. That is, the breakage rate of the die-bonding film 3 in the cool expansion process was extremely good, and the yield rate in the pick-up test in which the push-up height of the push-up pin was small was also very good.

The dicing die bond films 20 of Examples 1 and 7 have the average elasticity (Y _MD + Y _TD ) of the base films 1 (a) and 1 (g) at 5% elongation in the MD direction and the TD direction at 0°C. /2 is close to the lower limit of the range of the present invention, so the breakability and pick-up properties of the die bond film 3 are slightly inferior compared to the dicing die bond films 20 of Examples 2 to 4, Example 6, and Example 8. was. On the other hand, in the dicing die-bonding film 20 of Example 5, the average value (Y _MD + Y _TD )/2 of the elasticity at 5% elongation in the MD direction and the TD direction at 0°C of the base film 1 (e) is the same as that of the present invention. Since it was close to the upper limit of the range, the pick-up properties were slightly inferior compared to the dicing die bond films 20 of Examples 2 to 4, Example 6, and Example 8.

In the dicing die bond films 20 of Examples 9 and 18, the hydroxyl value of the acrylic adhesive polymer (A) of the adhesive composition 2(a) is close to the lower limit of the range of the present invention, and the polyisocyanate Since the amount of the crosslinking agent added is also at the lower limit of the range of the present invention, compared to the dicing die bond films 20 of Examples 2, 10, and 11, the die bond of small pieces peeled off from the adhesive layer 2 during cool expansion is The ratio of the area S1 of the edge portion (hatched area) of the film 3a was rather small, that is, the contribution of the effect of reducing the adhesive force after irradiation with ultraviolet light under oxygen conditions was small, and the pick-up property was slightly inferior.

In the dicing die bond films 20 of Examples 12, 17, and 19, the hydroxyl value of the acrylic adhesive polymer (A) of the adhesive composition 2(a) is close to the lower limit of the range of the present invention, Further, the amount of the polyisocyanate crosslinking agent added is also close to or at the upper limit of the range of the present invention, and the amount of the polyisocyanate crosslinking agent added in adhesive composition 2(a) and the amount of the polyisocyanate crosslinking agent The equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) possessed by the acrylic adhesive polymer to the hydroxyl group (-OH) possessed by the acrylic adhesive polymer (-NCO/-OH) is also close to the upper limit of the scope of the present invention. Compared to the dicing die bond films 20 of Nos. 10 and 11, the area S1 of the edge portion (shaded area) of the small piece of die bond film 3a peeled off from the adhesive layer 2 during cool expansion is slightly larger, and after irradiation with ultraviolet rays under aerobic conditions. The effect of reducing the adhesive force was gradually suppressed due to the increase in the re-adhering area, and the pick-up property was slightly inferior. Furthermore, the dicing die bond films 20 of Examples 12 and 19 had slightly inferior cutting properties of the die bond films 3.

In the dicing die-bonding film 20 of Example 13, the hydroxyl value of the acrylic adhesive polymer (A) of the adhesive composition 2(a) is close to the lower limit of the range of the present invention, and the polyisocyanate crosslinking agent has a hydroxyl value close to the lower limit of the range of the present invention. The amount added is also at the lower limit of the range of the present invention, and compared to the dicing die bond film 20 of Example 2 and Examples 14 to 17, the edge portion of the die bond film 3a of the small piece peeled off from the adhesive layer 2 during cool expansion. The ratio of the area S1 (shaded area) was a little small, that is, the contribution of the effect of reducing the adhesive strength after irradiation with ultraviolet rays under oxygen conditions was small, and the pick-up property was a little inferior.

The dicing die bond films 20 of Examples 20 and 23 had adhesive strength after irradiation with ultraviolet rays under oxygen conditions close to the upper limit of the range of the present invention, and compared with the dicing die bond films 20 of Examples 2, 21, and 22, The pickup performance was slightly poor.

On the other hand, as shown in Tables 17 and 18, the properties of the base film 1 and the adhesive composition, and the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen conditions and the adhesive strength B after irradiation with ultraviolet rays under anaerobic conditions. Regarding the dicing die bond films 20 (DDF(aa) to DDF(gg)) of Comparative Examples 1 to 7 produced using the dicing tape 10 that does not satisfy at least one of the requirements, the cutting of the die bond film 3 in the cool expand process It was confirmed that the results were inferior to the dicing die bond films 20 (DDF(a) to DDF(z)) of Examples 1 to 26 in any of the evaluation items of the properties and the pick-up properties in the pick-up process.

Specifically, for the dicing die bond film 20 (DDF (aa)) of Comparative Example 1, the average elasticity at 5% elongation in the MD direction and TD direction at 0°C of the base film 1 (i) of the dicing tape 10 Value (Y _MD + Y _TD )/2, the amount of polyisocyanate crosslinking agent added in adhesive composition 2 (q), the isocyanate group (-NCO) possessed by the polyisocyanate crosslinker, and the hydroxyl group possessed by the acrylic adhesive polymer. Since the equivalent ratio (-NCO/-OH) with (-OH) is below the lower limit of the range of the present invention, the breakability of the die-bonding film 3 made of the adhesive composition 3(c) in the cool expand process is poor. Even in the cut die-bonding film 3a, no peeling from the adhesive layer 2 was formed at the edge portion (no peeling was observed), and the die-bonding film 3 made of adhesive composition 3(c) was used. Compared to the dicing die bond film 20 (DDF(y)) of Example 25, the die bond film 3 made of the adhesive composition 3(c) had inferior results in both evaluations of breakability and pick-up property. confirmed.

Similarly, for the dicing die bond films 20 (DDF (bb)) and (DDF (cc)) of Comparative Examples 2 and 3, the base films 1 (j) and 1 (l) of the dicing tape 10 were heated at 0°C. Average value of elasticity at 5% elongation in MD direction and TD direction (Y _MD + Y _TD )/2, amount of polyisocyanate crosslinking agent added in adhesive composition 2 (q), and isocyanate contained in the polyisocyanate crosslinking agent Since the equivalent ratio (-NCO/-OH) between the group (-NCO) and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer is below the lower limit of the range of the present invention, adhesive composition 3 in the cool expand step The breakability of the die-bonding film 3 made of (a) is poor, and even in the cut die-bonding film 3a, no peeling from the adhesive layer 2 is formed at the edge portion (no peeling is observed), for example, In comparison with the dicing die bond films 20 (DDF(a) to DDF(q)) and (DDF(t) to DDF(w)) of Examples 1 to 17 and 20 to 23, adhesive composition 3(a) It was confirmed that the die-bonding film 3 consisting of the following was inferior in both evaluation of breakability and pick-up performance.

Furthermore, regarding the dicing die bond film 20 (DDF(dd)) of Comparative Example 4, the adhesive composition 2(a) of the dicing tape 10 satisfies the requirements of the present invention, but the adhesive composition 2(a) of the base film 1(i) is The average value (Y _MD + Y _TD )/2 of the elasticity at 5% elongation in the MD direction and TD direction at °C is below the lower limit of the range of the present invention, and the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under aerobic conditions is Since the upper limit of the range of the present invention is exceeded, the breakability of the die bond film 3 made of the adhesive composition 3(a) in the cool expand process is poor, and in the cut die bond film 3a, the four corners of the die bond film 3 are Although a peeled state was slightly formed, the adhesive strength A after irradiation with ultraviolet rays under oxygen conditions was large, and for example, adhesive composition 3 It was confirmed that the die-bonding film 3 made of (a) had poor results in both evaluations of breakability and pick-up performance.

Furthermore, regarding the dicing die bond film 20 (DDF(ee)) of Comparative Example 5, the base film 1(b) of the dicing tape 10 satisfies the requirements of the present invention, but the The amount of the isocyanate crosslinking agent added and the equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer are within the scope of the present invention. Although the cuttability of the die-bond film 3 made of adhesive composition 3(a) in the cool-expanding process was good, the die-bond film 3a that had been cut had an adhesive layer on its edge portion. 2 was not formed (no peeling was observed), and, for example, compared to the dicing die bond film 20 (DDF(i)) of Example 9, the pick-up property evaluation was slightly inferior. This was confirmed.

Furthermore, regarding the dicing die bond film 20 (DDF(ff)) of Comparative Example 6, the various properties of the base film 1(b) and the adhesive composition 2(t) of the dicing tape 10 satisfy the requirements of the present invention. but,
Since the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen exceeds the upper limit of the range of the present invention, the breakability of the die bond film 3 made of the adhesive composition 3(a) in the cool expand process is good. In the cut die-bonding film 3a, although a state was formed in which the edge portion (fourth circumferential portion) was moderately peeled from the adhesive layer 2 of the dicing tape 10, the adhesive strength A was large after irradiation with ultraviolet rays under oxygen conditions. For example, compared with the dicing die bond film 20 (DDF(p)) of Example 16, it was confirmed that the results were inferior in the evaluation of pick-up properties.

Furthermore, regarding the dicing die bond film 20 (DDF (gg)) of Comparative Example 7, the adhesive strength A of the base film 1 (b) and the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays under oxygen conditions and the adhesive strength A under oxygen-free conditions Although the requirements of the present invention of adhesive strength B after UV irradiation are met, the amount of the polyisocyanate crosslinking agent added in adhesive composition 2(u), the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent, and the acrylic adhesive Since the equivalent ratio (-NCO/-OH) of the hydroxyl group (-OH) of the adhesive polymer exceeds the upper limit of the scope of the present invention, the die-bonding film 3 made of the adhesive composition 3(a) is Although the die-bonding film 3a was cut without any problems, the cut die-bonding film 3a was peeled off excessively and irregularly from the adhesive layer 2 of the dicing tape 10 from its edge portions (four peripheral portions) toward the center. As a result, during pickup, the area of the die-bonding film 3a peeled off from the adhesive layer re-adhered to the adhesive layer 2 after the dicing tape 10 is irradiated with ultraviolet rays becomes too large. It was confirmed that the pick-up performance was inferior in comparison to dicing die bond film 20 (DDF(l)). Further, after the expanding process, cracks in the adhesive layer 2 and peeling off from the base film 1 were observed in some parts.

1...Base film,
2...adhesive layer,
3, 3a1, 3a2...die bond film (adhesive layer, adhesive film),
4...Stainless steel plate (SUS304/BA plate),
5... Flat plate cross stage,
6...actuator,
7...Load cell,
8...Rotating stage,
9...Semiconductor chip with die bond film,
10...Dicing tape,
11...OPP film base single-sided adhesive tape (backing tape),
12...Paper double-sided adhesive tape (fixing tape),
13... Flat plate cross stage,
14...PET film base single-sided adhesive tape (backing tape, fixing tape),
15...SUS board,
20...Dicing die bond film,
W, 30... semiconductor wafer,
30a, 30a1, 30a2...semiconductor chip,
30b... Modified region (broken region in FIGS. 7(c) to (f), FIGS. 8(a) and (b)),
30c... Semiconductor wafer cutting line 31... Semiconductor wafer center part 32... Semiconductor wafer left part 33... Semiconductor wafer right part 34... Semiconductor wafer upper part 35... Semiconductor wafer lower part 40... Ring frame (wafer ring),
41... Holder,
50...Adsorption collet,
60... Push-up pin (needle)
70, 80...Semiconductor devices 71, 81...Semiconductor chip mounting support substrate 72...External connection terminals,
73...terminal,
74, 84...Wire 75, 85...Sealing material 76...Supporting member

The present invention relates to a dicing tape that can be used in a semiconductor device manufacturing process and a method for manufacturing a semiconductor device using the dicing tape.

In the manufacture of semiconductor devices, dicing tapes and dicing die bond films in which the dicing tapes and die bond films are integrated are used.

Dicing tape has a form in which an adhesive layer is provided on a base film, and is used to fix and hold semiconductor chips separated into individual pieces by dicing during dicing of semiconductor wafers so that they do not scatter. The individualized semiconductor chips are then peeled off from the adhesive layer of the dicing tape and fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip via a separately prepared adhesive or adhesive film. be done.

A dicing die bond film is a film in which a die bond film (hereinafter sometimes referred to as an "adhesive film" or "adhesive layer") is removably provided on an adhesive layer of a dicing tape. In the manufacture of semiconductor devices, a dicing die-bonding film is used to obtain individual semiconductor chips with dicing die-bonding films by placing and adhering semiconductor wafers, which may or may not be diced, onto the die-bonding film. The semiconductor chip with the die-bond film is then peeled off (picked up) from the adhesive layer of the dicing tape together with the die-bond film by pushing it up from the bottom side of the dicing tape using a push-up jig (for example, a push-up pin). It is then fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip.

The above-mentioned dicing die-bonding film is preferably used from the viewpoint of improving productivity, but in recent years, as a method for obtaining semiconductor chips with a die-bonding film using a dicing die-bonding film, a conventional full-cut cutting method using a dicing blade rotating at high speed has been used. As an alternative to this method, a method called SDBG (Stealth Dicing Before Griding) has been proposed as a method that can suppress chipping when dividing thinning semiconductor wafers into chips.

In this method, first, a semiconductor wafer is attached to a backgrind tape, and a laser beam is irradiated into the inside of the semiconductor wafer along the line scheduled for dicing of the semiconductor wafer. A modified region is selectively formed at a predetermined depth from the surface of the wafer, and then back grinding is performed to a predetermined thickness while adjusting the grinding amount appropriately, and the grinding load of the grinding wheel is applied to the back grind tape. to separate into multiple semiconductor chips. After that, the plurality of individualized semiconductor chips on the backgrind tape are attached to a dicing die bond film, transferred from the backgrind tape to the dicing die bond film, and diced at low temperature (for example, -30°C to 0°C). By expanding the tape (hereinafter sometimes referred to as "cool expansion"), the die bond film, which has become brittle at low temperatures, is cut according to the shape of each semiconductor chip. Finally, it is peeled off from the adhesive layer of the dicing tape by a pickup to obtain a semiconductor chip with a die bond film.

In the above pick-up process, after cutting the semiconductor wafer with the die-bond film, the dicing tape is expanded at around room temperature (hereinafter sometimes referred to as "room-temperature expansion") to separate the adjacent semiconductor chips with the die-bond film. Heat shrink (hereinafter referred to as "kerf width") is used to remove slack in the circumferential portion of the dicing tape outside the semiconductor chip holding area that occurs when the expanded state is released after expanding the gap (hereinafter sometimes referred to as "kerf width"). After maintaining the above-mentioned kerf width by applying tension to the dicing tape (sometimes referred to as "heat shrinking"), the individual diced semiconductor chips with the die-bonding film are bonded to the adhesive of the dicing tape. It can be peeled off from the layer and picked up.

Patent Document 1 discloses that the adhesive layer contains an acrylic polymer, the acrylic polymer contains a C9 to C11 alkyl (meth)acrylate structural unit and a hydroxyl group-containing (meth)acrylate structural unit, and the C9 to C11 alkyl ( Dicing tapes containing 40 mol% to 85 mol% of meth)acrylate constitutional units are disclosed. The dicing tape of Patent Document 1 weakens the polarity of the acrylic polymer by using C9 to C11 alkyl (meth)acrylate, suppresses the affinity of the adhesive layer to the die bond film, and allows the dicing tape to be removed even with a small push-up amount in the pickup process. The die-bonding film can be peeled off well.

Japanese Patent Application Publication No. 2020-194879

By the way, in recent years, as semiconductor wafers have become thinner, chip cracking has become more likely to occur during wire bonding in the multi-stage stacking process of semiconductor chips.As a countermeasure to this problem, a wire-embedded die bonding film that also has a spacer function has been developed. Proposed. Wire-embedded die bond films require wires to be embedded without gaps during die bonding, and are thicker and less fluid than conventional general-purpose die bond films for fixing semiconductor chips to lead frames and wiring boards. Because such wire-embedded die-bond films tend to have high properties (low melt viscosity at high temperatures), when such wire-embedded die-bond films are laminated onto conventional dicing tape and used in semiconductor chip manufacturing, wire-embedded die-bond films tend to have high However, the semiconductor chips may not be neatly cut along the size of the individualized semiconductor chips. As one of the countermeasures, we have applied a dicing tape that uses a base material that has higher tensile stress at low temperatures than conventional dicing tape, and cool-expanded the dicing tape to the die bond film that is in close contact with the dicing tape. One possible method is to apply sufficient cleaving force (external stress). However, this method has the following new problem.

That is, in the above-mentioned cool-expanding process, when the cutting force (external stress) is applied from the cool-expanded dicing tape to the die bond film that is in close contact with the dicing tape, the tensile stress of the dicing tape at low temperatures is insufficient. If so, the die bond film, even if it is the wire-embedded die bond film described above that is difficult to break, can be cut neatly along the size of the semiconductor chips that have been separated into pieces. However, on the other hand, in addition to the impact when the die-bond film is cut, stress in the direction away from the die-bond film due to the expansion immediately after the cut is concentrated in the dicing tape portion between the semiconductor chips, which increases the distance between the semiconductor chips. At the same time, in the die-bonding film corresponding to the size of the diced semiconductor chip, the edge portion (fourth circumferential portion) of the die-bonding film may partially peel off from the adhesive layer of the dicing tape. The more the wiring circuits preformed on the surface of the semiconductor chip become multi-layered, the more likely the semiconductor chip will warp due to the difference in thermal expansion coefficient between the wiring circuits and the material of the semiconductor chip. Partial peeling of the dicing tape from the adhesive layer tends to be facilitated.

When the adhesive layer of the dicing tape is composed of an active energy ray (e.g. ultraviolet) curable adhesive composition, the adhesive force of the adhesive layer is reduced before picking up the semiconductor chip with the die bond film from the dicing tape. For this purpose, the adhesive layer is cured by irradiation with ultraviolet rays. However, as mentioned above, if the edge part of the die bond film of a semiconductor chip with a die bond film is peeled off from the adhesive layer of the dicing tape, the adhesive layer in the peeled part comes into contact with oxygen in the air. Even when irradiated with ultraviolet rays, a reaction between the growing polymer radicals and oxygen occurs, stopping the growth of the polymerization chain, and inhibiting the polymerization of the active energy ray-curable adhesive composition. It may not harden. In such cases, the adhesive strength of the adhesive layer is not sufficiently reduced, so in the pick-up process, the semiconductor chip with the die-bonding film on the dicing tape is placed on the push-up jig, and the pick-up suction is applied from above. When the collet was brought into contact with and landed on the surface of the semiconductor chip, the edge portion of the die bond film of the semiconductor chip with die bond film, which had peeled off from the adhesive layer of the dicing tape, became an adhesive layer that had not been sufficiently cured by ultraviolet irradiation. Even when the jig is pushed up from the bottom side of the dicing tape and the suction/lifting is performed using a suction collet, the semiconductor chip with the die-bond film is strongly re-adhered to the extent that it cannot be easily peeled off from the adhesive layer 2. Chip pickup is inhibited.

On the other hand, it is possible to eliminate the above-mentioned partial peeling by strengthening the adhesive force of the adhesive layer to the die-bond film, but in this case, it is necessary to peel the die-bond film from the adhesive layer after UV irradiation during pickup. This is not a good idea because the force required for this increases and the pick-up performance tends to decrease.

In the above pickup process, when the die bond film of the semiconductor chip with die bond film is peeled off from the adhesive layer of the dicing tape after UV irradiation by pushing up the jig from the bottom side of the dicing tape, as the amount of pushing up of the jig increases, Peeling starts from the edge of the die-bond film, and then progresses from the edge to the center, but usually the force required to peel off the edge first, in other words, the force required to trigger the peeling. is the largest.

From this point of view, peeling of the edge portion of the die-bonding film already formed in the above-mentioned expanding process before the pick-up process may seem to be advantageous for the progress of peeling in the pick-up process. However, as mentioned above, due to the effect of curing failure due to oxygen damage peculiar to adhesive layers made of conventional active energy ray-curable adhesive compositions, dicing When a pickup collet was brought into contact with and landed on the surface of the semiconductor chip with the die-bond film on the tape, the semiconductor chip with the die-bond film had peeled off from the adhesive layer of the dicing tape. If the edges of the die-bond film are not sufficiently cured by ultraviolet irradiation, the semiconductor chip with the die-bond film can be removed from the adhesive layer by pushing up a jig from the bottom side of the dicing tape and by suction/lifting with a suction collet. This is disadvantageous because it is strongly re-adhered to the extent that it cannot be easily peeled off.

Here, if the adhesive layer is made of an active energy ray-curable adhesive composition that is far less susceptible to oxygen damage than a conventional adhesive layer composed of an active energy ray-curable adhesive composition, If it is possible to find an adhesive layer that can prevent the adhesive layer from peeling off from the adhesive layer at the edge of the die-bond film of a semiconductor chip with a die-bond film during the expansion process before the pick-up process, the effect of re-adhesion can be avoided. In other words, by pushing up the jig from the bottom side of the dicing tape and suctioning and lifting it with a suction collet, the semiconductor chip with die bond film is re-adhered to a level where it can be easily peeled off from the adhesive layer 2 after UV irradiation. The force required for peeling off the edge portion of the cut die-bonding film is smaller than that required in the past, and good pick-up performance may be obtained. However, at present, there are no dicing tapes that have a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive composition that is not susceptible to polymerization inhibition caused by oxygen. There was room for consideration in the development of a dicing tape that would make it possible to take advantage of the peeling of the edge portion of the die-bonding film.

The present invention solves the above-mentioned conventional problems, and has the following objects: (1) The die-bond film is cut well by cool expansion, and the edge portions (four sides) of the cut die-bond film are (2) At the time of pick-up, the edge portion of the die bond film that has been peeled off from the adhesive layer becomes adhesive after irradiation with ultraviolet rays of the dicing tape. The phenomenon of re-adhering to the agent layer to the extent that it cannot be easily peeled off even by pushing up a jig from the underside of the dicing tape or by suction/lifting with a suction collet is greatly suppressed, improving the pick-up performance of semiconductor chips with die-bonding films. Our objective is to provide excellent dicing tapes and dicing die bond films. Another object of the present invention is to provide a method for manufacturing a semiconductor device using the dicing tape.

The present invention
A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has an elastic modulus at 5% elongation Y _MD in the MD direction (flow direction during film formation of the base film) at 0°C, and an elastic modulus in the TD direction (direction perpendicular to the MD direction) at 0°C. When the elastic modulus at 5% elongation is Y _TD , the average value of the elastic modulus at 5% elongation (Y _MD + Y _TD )/2 has a value in the range of 165 MPa or more and 260 MPa or less,
The active energy ray-curable adhesive composition comprises an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate crosslinker that undergoes a crosslinking reaction with the hydroxyl group. Contains an agent,
The acrylic adhesive polymer has a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g, and the polyisocyanate crosslinking agent is 2 parts by mass based on 100 parts by mass of the acrylic adhesive polymer. The equivalent ratio (-NCO) of the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer is included in the range of .4 parts by mass or more and 7.0 parts by mass. /-OH) is adjusted within the range of 0.14 or more and 1.32 or less,
The adhesive layer of the dicing tape has an adhesive strength A after irradiation with ultraviolet light under aerobic conditions to a stainless steel plate (SUS304/BA plate) at 23° C. (integrated amount of ultraviolet light: 150 mJ/m ² , peeling angle: 90°, peeling speed: 300mm/min) is in the range of 3.50N/25mm or less, and the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment on a stainless steel plate (SUS304/BA plate) at 23°C (integrated amount of ultraviolet light: 150 mJ/m ² , peeling angle: 90°, peeling speed: 300 mm/min) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less.

In one embodiment, the base film is composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA). It is a resin film.

In one embodiment, the active energy ray-curable pressure-sensitive adhesive composition includes at least an α-aminoalkylphenone photoinitiator (a), an α-aminoalkylphenone photoinitiator, and an α-aminoalkylphenone photoinitiator as the photoinitiator. Contains three types of photopolymerization initiators: an alkylphenone photopolymerization initiator (b) and an acylphosphine oxide photopolymerization initiator (c).

In one embodiment, the α-aminoalkylphenone photopolymerization initiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photopolymerization initiator The content of each of the polymerization initiators (c) is 0.8 parts by mass or more and 5.0 parts by mass of the α-aminoalkylphenone photopolymerization initiator (a) based on 100 parts by mass of the acrylic adhesive polymer. 0.2 parts or more and 5.0 parts or less of an alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and acylphosphine oxide light The polymerization initiator (c) is in a range of 0.2 parts by mass or more and 2.0 parts by mass or less.

In one embodiment, the ratio A/B of the adhesive strength A after irradiation with UV rays under oxygen to the adhesive strength B after irradiated with UV rays under anaerobic conditions is in the range of 3.00 or more and 5.00 or less.

In one embodiment, the dicing tape is a sheet-like laminate in which a die bond film and a plurality of individualized semiconductor chips are sequentially laminated on the adhesive layer at -30°C to 0°C. It is used to expand (stretch) the die bond film at a temperature and cut the die bond film according to the shape of the individualized semiconductor chips.

In one embodiment, the dicing tape is formed by expanding the dicing tape to which the sheet-like laminate is attached at a temperature in a range of -30°C or more and 0°C or less, and forming the semiconductor into individual pieces. When the die-bonding film is cut to match the shape of the chip, the edge portions (fourth periphery portions) of the die-bonding film are peeled off from the adhesive layer.

In one embodiment, the die bond film cut to fit the shape of the individualized semiconductor chip has an area ratio of an edge portion (four peripheral portions) of the die bond film peeled from the adhesive layer. The area is in the range of 10% or more and 45% or less with respect to the entire area of the cut die-bonding film .

The present invention also provides a method for manufacturing a semiconductor device using the dicing tape.

According to the present invention, (1) the die-bond film is cut well by cool expansion, and the cut die-bond film is in a state where its edge portions (four peripheral portions) are peeled off from the adhesive layer of the dicing tape. (2) At the time of pick-up, the edge portion of the die-bonding film that has been peeled off from the adhesive layer is applied to the adhesive layer of the dicing tape after being irradiated with ultraviolet rays by pushing up a jig from the bottom side of the dicing tape and A dicing tape with excellent pick-up properties is provided, in which the phenomenon of re-sticking so strongly that it cannot be easily peeled off even by suction and lifting with a suction collet is greatly suppressed. Further, a method for manufacturing a semiconductor device using the dicing tape is provided.

1 is a cross-sectional view showing an example of the structure of a base film of a dicing tape to which this embodiment is applied. FIG. 1 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. FIG. 2 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film. FIG. 2 is a schematic diagram of an adhesive/film peeling analyzer of a flexible peeling angle type, viewed from directly above, for measuring the adhesive force of a dicing tape. It is a flow chart explaining a manufacturing method of a dicing tape. It is a flowchart explaining the manufacturing method of a semiconductor chip. FIG. 2 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of a dicing die bond film, and a semiconductor wafer separated into pieces is attached to the center of the die bond film. (a) to (f) are cross sections showing an example of the process of grinding a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation and the process of bonding a plurality of cut semiconductor wafers to a dicing die bond film. It is a diagram. (a) to (f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a plurality of cut thin film semiconductor wafers to which dicing die-bonding films are bonded. FIG. 3 is an enlarged cross-sectional view showing an example of a state in which the edge portions (four peripheral portions) of the cut die-bonding film are partially peeled off from the adhesive layer of the dicing tape. FIG. 3 is an enlarged plan view of a state in which the edge portions (four peripheral portions) of the cut die-bonding film are partially peeled off from the adhesive layer of the dicing tape, as observed from the back side (base film side) of the semiconductor chip. FIG. 2 is a schematic cross-sectional view of one embodiment of a semiconductor device with a stacked structure using a semiconductor chip manufactured using a dicing die bond film in which a dicing tape to which the present embodiment is applied is bonded to a die bond film. FIG. 7 is a schematic cross-sectional view of another embodiment of a semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments.

<Configuration of dicing tape and dicing die bond film>
FIGS. 1A to 1D are cross-sectional views showing an example of the structure of a base film 1 of a dicing tape to which this embodiment is applied. The base film 1 of the dicing tape of this embodiment may be a single layer of a single resin composition (see (a) 1-A in FIG. 1), or may be composed of multiple layers of the same resin composition. It may be a laminate (see (b) 1-B in FIG. 1), or a laminate consisting of multiple layers of different resin compositions (see (c) 1-C and (d) 1-D in FIG. 1). ). In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

FIG. 2 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a configuration in which an adhesive layer 2 is provided on the first surface of a base film 1. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having releasability. You can leave it there. The base film 1 has an elastic modulus at 5% elongation of Y MD in the MD direction (the flow direction during film formation of the base film) at 0°C, and an elastic modulus of Y _MD in the TD direction (direction perpendicular to the MD direction) at 0°C. When the elastic modulus at 5% elongation is Y _TD , the resin film is composed of a resin film having an average value (Y _MD +Y _TD )/2 of each elastic modulus at 5% elongation in a range of 165 MPa or more and 260 MPa or less. The adhesive forming the adhesive layer 2 is, for example, an active energy ray-curable acrylic adhesive that hardens and shrinks when irradiated with active energy rays such as ultraviolet rays (UV), reducing its adhesion to the adherend. Adhesive etc. are used.

The dicing tape 10 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. A plurality of pieces are formed on the adhesive layer 2 of the dicing tape 10 by back-grinding a semiconductor wafer on which dividing grooves are formed on the surface using a blade or a semiconductor wafer on which a modified layer is formed inside using a laser. The diced semiconductor chips are pasted and held (temporarily fixed) via a die bond film (adhesive layer), and the die bond film is cut into pieces according to the shape of each chip by cool expansion. The kerf width between the semiconductor chips is sufficiently expanded through room temperature expansion and heat shrinking steps, and each semiconductor chip with a die bond film is peeled off from the adhesive layer 2 of the dicing tape 10 through a pick-up step. The obtained semiconductor chip with a die-bonding film is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip.

FIG. 3 is a cross-sectional view showing an example of a so-called dicing die bond film, which is a structure in which the dicing tape 10 to which this embodiment is applied is bonded and integrated with a die bond film (adhesive film) 3. As shown in FIG. 3, the dicing die bond film 20 has a structure in which a die bond film (adhesive film) 3 is releasably adhered and laminated on the adhesive layer 2 of the dicing tape 10.

The dicing die bond film 20 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. On the die bond film 3 of the dicing die bond film 20, a plurality of wafers are obtained by back-grinding a semiconductor wafer on which dividing grooves are formed on the surface with a blade or a semiconductor wafer on which a modified layer is formed inside with a laser. The diced semiconductor chips are pasted and held (glued), and the die bond film 3, which has been made brittle at low temperatures by cool expansion, is cut according to the shape of the individual diced semiconductor chips, and the die bond film 3 is cut into pieces according to the shape of each chip. to obtain a semiconductor chip. Next, after the kerf width between the die-bonding film-attached semiconductor chips is sufficiently expanded by room-temperature expansion and heat-shrinking steps, the individual die-bonding film-attached semiconductor chips are peeled off from the adhesive layer 2 of the dicing tape 10 by a pickup step. The obtained semiconductor chip with the die bond film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die bond film (adhesive film) 3. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die-bonding film 3 (the surface facing the adhesive layer 2) The opposite surface) may be provided with a base sheet (release liner) having releasability, and may be peeled off as appropriate during use.

<Dicing tape>
(Base film)
The base film 1, which is the first component of the dicing tape 10 of the present invention, will be explained below.

[Elastic modulus of base film at 5% elongation at 0°C]
The above-mentioned base film 1 has an elastic modulus at 5% elongation in the MD direction (flow direction during film formation of the base film) at 0°C as Y _MD and in the TD direction (direction perpendicular to the MD direction) at 0°C. The resin film has an average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation of 165 MPa or more and 260 MPa or less, where Y _TD is the elastic modulus at 5% elongation. The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is preferably in the range of 190 MPa or more and 240 MPa or less.

If the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is less than 165 MPa, even if the dicing tape 10 is expanded, the difference in the direction away from the cut die bond film Since stress is less likely to act on the cut die-bonding film, there is a risk that the cut die-bonding film will not be partially peeled from the adhesive layer 2 of the dicing tape 10 at its edge portions (four peripheral portions). Furthermore, at low temperatures, even if external stress is applied to the dicing tape 10 by expanding, it will not be sufficiently transmitted to the die bond film 3, so especially when using a wire-embedded die bond film, there is a risk that the die bond film 3 will not be cut properly during the cool expansion process. There is. Furthermore, if the value of (Y _MD + Y _TD )/2 is too small, the dicing tape 10 may become soft and difficult to handle, or a sufficient kerf width may not be secured. As a result, the effect of improving the pick-up property is not seen or the pick-up property is lowered compared to the conventional method.

On the other hand, if the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 exceeds 260 MPa, it may be difficult to expand the dicing tape 10. Even if it were possible to expand, the die bond film 3 would peel off excessively from the adhesive layer 2 during expansion, and sufficient external stress would be applied to the die bond film 3 through the adhesive layer 2 almost uniformly over the entire die bond film 3. There is a risk that the die-bonding film 3 may not be cut cleanly, that a sufficient kerf width may not be secured, or that the kerf width may vary. In addition, in the pick-up process, when the excessively peeled die-bonding film re-adheres to the adhesive layer 2, the re-adhesive area becomes excessively large. Even if the dicing tape 10 is made of a strong adhesive composition, in order to peel it off by pushing up the dicing tape 10 from the lower surface side with a jig, there is a risk that a large amount of energy will be required depending on the large re-adhesion area. As a result, the pick-up performance of the semiconductor chip with the die-bonding film deteriorates.

Since the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is in the range of 165 MPa or more and 260 MPa or less, the dicing tape 10 can be used in the cool expand process as described below. A sufficient external stress can be applied to the die-bonding film 3 to break the die-bonding film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition, and the dicing tape 10 Apply stress in the direction away from the die bond film 3 to the adhesive layer 2 necessary to intentionally form an appropriate peeling state between the edge portion of the cut die bond film and the adhesive layer 2. be able to. In addition, in this case, the stress applied to the die bond film 3 and the adhesive layer 2 is moderately suppressed, so the cut die bond film does not peel off excessively from the adhesive layer 2, and the kerf width is sufficiently It is also possible to avoid damage caused by collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2. In this case, if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, the pick-up properties of the semiconductor chip with a die-bonding film can be made better than before. can.

The elastic modulus Y _MD at 5% elongation in the MD direction and the elastic modulus Y _TD at 5% elongation in the TD direction at 0° C. of the base film 1 in the present invention are measured by the following method. Specifically, first, a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was used as a sample for MD direction measurement (number of samples N = 5), and a sample for TD direction measurement (number of samples N = 5). N=5), and test pieces each having a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared. Next, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were fixed with chucks so that the initial distance between the chucks was 20 mm, and the test piece was After being placed at 0°C for 1 minute in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Co., Ltd., a tensile test was performed at a speed of 100 mm/min to obtain a tensile load-elongation curve. Then, from the obtained tensile load-elongation curve, the origin (extension start point) and the tensile load value on the curve corresponding to the 1.0 mm elongation from the origin (5% elongation with respect to the initial distance between chucks 20 mm) ( Calculate the slope of the straight line connecting the points in unit: N, and use the following formula.

Elastic modulus Y at 5% elongation (unit: MPa) = (inclination) x [(initial distance between chucks)/(cross-sectional area of test piece)]

From this, the elastic modulus Y at 5% elongation of the base film 1 is determined.
Measurement is performed with the number of samples N=5 in each direction, and the average value is defined as the elastic modulus at 5% elongation _YMD in the MD direction and the elastic modulus at 5% elongation _YTD in the TD direction. The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 in the present invention is a value calculated using each of the above values.

[Resin composition constituting the base film]
As long as the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is within the above range, Although not particularly limited, from the viewpoint of achieving both expandability and heat shrinkability, a resin composition containing a thermoplastic crosslinked resin is preferable. Specifically, the resin composition contains, for example, a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer (hereinafter sometimes simply referred to as "ionomer"). Examples include resin compositions containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer, and a polyamide resin (PA). A resin film formed using these resin compositions can be suitably used as the base film 1. Among these resin compositions, the dicing tape 10 using the above-mentioned base film needs to be particularly compatible with the application of a wire-embedded die-bonding film. A thermoplastic crosslinked resin (IO) and a polyamide resin (PA) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer (hereinafter sometimes simply referred to as "ionomer") that enable the provision of the dicing tape 10 A resin composition containing the following is suitable.

The total amount of the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1 is as follows: As long as the average value of the elastic modulus at 5% elongation (Y _MD + Y _TD )/2 is within the above range, it is not particularly limited, but 65 mass with respect to the total amount of the resin composition constituting the entire base film 1. % or more and 100% by mass or less. More preferably 75% by mass or more and 100% by mass or less, particularly preferably 85% by mass or more and 100% by mass or less.

The dicing tape 10 using the base film 1 having such a structure has the die bond film 3 adhered to the adhesive layer 2 and is stretched at low temperature to give the die bond film 3 an appropriate breaking force ( Since it is possible to apply external stress), it is suitable for use in the cool expansion process of the semiconductor device manufacturing process, and furthermore in the room temperature expansion process. That is, the cool expansion process is suitable for properly cleaving the die bond film 3 according to the shape of each individual semiconductor chip that has already been diced, and obtaining individual die bond film-attached semiconductor chips of a predetermined size with a high yield. . By cool expanding the continuous dicing tape 10 immediately after cutting the die-bonding film 3, it is possible to apply appropriate stress to the adhesive layer 2 of the dicing tape 10 in the direction away from each cut die-bonding film. Therefore, in each cut die-bonding film, it is possible to moderately and intentionally form a state in which the edge portion (four peripheral portions) is partially peeled off from the adhesive layer 2 of the dicing tape 10. suitable. Furthermore, even in the room-temperature expansion process, the expandability necessary to ensure a sufficient kerf width between semiconductor chips is maintained.

[Resin composition containing thermoplastic crosslinked resin (IO) consisting of ionomer of ethylene/unsaturated carboxylic acid copolymer and polyamide resin (PA)]
As described above, the base film 1 in the present invention is a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA). A preferred embodiment is a resin film composed of: The thermoplastic crosslinked resin (IO) and polyamide resin (PA) made of the ionomer of these ethylene/unsaturated carboxylic acid copolymers will be explained below.

[Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid copolymer]
In the base film 1 of this embodiment, the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer is a part of the carboxyl group of the ethylene/unsaturated carboxylic acid copolymer. , or a resin completely neutralized (crosslinked) with metals (ions). In the following description, the "thermoplastic crosslinked resin made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer" may be referred to as a "resin made of an ionomer" or simply "ionomer."

The ethylene/unsaturated carboxylic acid copolymer constituting the above-mentioned ionomer is at least a binary copolymer of ethylene and an unsaturated carboxylic acid, and a triple copolymer of a third copolymer component. It may be a multicomponent copolymer of more than the original. The ethylene/unsaturated carboxylic acid copolymer may be used alone, or two or more ethylene/unsaturated carboxylic acid copolymers may be used in combination.

Examples of the unsaturated carboxylic acids constituting the above-mentioned ethylene/unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic anhydride, Examples include unsaturated carboxylic acids having 4 to 8 carbon atoms such as maleic acid. In particular, acrylic acid or methacrylic acid is preferred.

When the ethylene/unsaturated carboxylic acid copolymer is a ternary or higher copolymer, in addition to the ethylene and unsaturated carboxylic acid constituting the binary copolymer, there is also a third component that forms the multicomponent copolymer. 3 may also be included. The third copolymerization component includes unsaturated carboxylic acid esters (for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate). , (meth)acrylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl moiety such as dimethyl maleate and diethyl maleate), unsaturated hydrocarbons (e.g. propylene, butene, 1,3-butadiene, pentene, 1, 3-pentadiene, 1-hexene, etc.), vinyl esters (e.g., vinyl acetate, vinyl propionate, etc.), oxides such as vinyl sulfuric acid and vinyl nitric acid, halogen compounds (e.g., vinyl chloride, vinyl fluoride, etc.), vinyl groups Examples include primary and secondary amine compounds, carbon monoxide, sulfur dioxide, etc., and unsaturated carboxylic acid esters are preferable as these copolymerization components.

The form of the above-mentioned ethylene/unsaturated carboxylic acid copolymer may be a block copolymer, random copolymer, or graft copolymer, and may be a binary copolymer or a ternary copolymer. But that's fine. Among these, preferred are binary random copolymers, ternary random copolymers, graft copolymers of binary random copolymers, and graft copolymers of ternary random copolymers because they are industrially available. , a binary random copolymer, or a ternary random copolymer are more preferred, and from the viewpoint of expandability, a ternary random copolymer that is less likely to neck during expansion is particularly preferred.

Specific examples of the above-mentioned ethylene/unsaturated carboxylic acid copolymers include binary copolymers such as ethylene/acrylic acid copolymers, ethylene/methacrylic acid copolymers, and ethylene/methacrylic acid/2-methyl acrylate. - Terpolymer copolymers such as propyl copolymers can be mentioned. Furthermore, commercially available ethylene/unsaturated carboxylic acid copolymers may be used, such as the Nucrel series (registered trademark) manufactured by DuPont Mitsui Polychemicals.

The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the above-mentioned ethylene/unsaturated carboxylic acid copolymer is preferably in the range of 1% by mass or more and 20% by mass or less. , and from the viewpoint of heat resistance (blocking, fusion), it is more preferably in the range of 5% by mass or more and 15% by mass or less.

In the base film 1 of the present embodiment, the ionomer used as the resin (IO) has carboxyl groups contained in the ethylene/unsaturated carboxylic acid copolymer crosslinked (neutralized) with metal ions at an arbitrary ratio. Preferably. Examples of metal ions used to neutralize acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, magnesium ions, sodium ions, and zinc ions are preferred, and sodium ions and zinc ions are more preferred from the viewpoint of easy availability of industrialized products.

The degree of neutralization of the ethylene/unsaturated carboxylic acid copolymer in the above ionomer is preferably in the range of 20 mol% or more and 85 mol% or less, and preferably in the range of 50 mol% or more and 82 mol % or less. is more preferable, and particularly preferably in a range of 65 mol% or more and 80 mol% or less. By setting the degree of neutralization to 20 mol% or more, the breakability of the die bond film 3 can be further improved, and the heat shrinkability of the dicing tape 10 in the heat shrink process described below can also be improved. By setting the content to 85 mol% or less, the film formability of the film can be improved. Note that the degree of neutralization is the blending ratio (mol %) of metal ions to the number of moles of acid groups, particularly carboxyl groups, possessed by the ethylene/unsaturated carboxylic acid copolymer.

The resin (IO) made of the above ionomer has a melting point of about 85 to 100°C, but the melt flow rate (MFR) of the resin (IO) made of the ionomer is 0.2 g/10 minutes or more and 20.0 g/10 min. It is preferably in the range of 10 minutes or less, more preferably in the range of 0.5 g/10 minutes or more and 20.0 g/10 minutes or less, and in the range of 0.5 g/10 minutes or more and 18.0 g/10 minutes or less. It is more preferable that When the melt flow rate is within the above range, the film formability as the base film 1 will be good. Note that MFR is a value measured at 190° C. and a load of 2160 g by a method based on JIS K7210-1999.

The resin composition constituting the base film 1 of this embodiment may contain a polyamide resin (PA) in addition to the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer described above. preferable. The mass ratio (IO):(PA) of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) shall be in the range of 72:28 to 95:5. is preferred. By configuring the base film 1 with the resin composition mixed so as to have the above mass ratio, the average value of the elastic modulus at 5% elongation at 0°C of the base film 1 (Y _MD + Y _TD )/2 It becomes easy to adjust to the above range. The mass ratio (IO):(PA) is more preferably in the range of 74:26 to 92:8, even more preferably in the range of 80:20 to 90:10. The upper and lower limits of the numerical ranges in this specification can be arbitrarily selected and combined.

[Polyamide resin (PA)]
Examples of the polyamide resin (PA) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, and ethylenediamine, tetramethylenediamine, and pentamethylene. Diamines, polycondensates with diamines such as hexamethylene diamine, decamethylene diamine, 1,4-cyclohexyl diamine, m-xylylene diamine, cyclic lactam ring-opening polymers such as ε-caprolactam and ω-laurolactam, 6- Examples include polycondensates of aminocarboxylic acids such as aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, and 12-aminododecanoic acid, and copolymers of the above-mentioned cyclic lactams, dicarboxylic acids, and diamines.

A commercially available product can also be used as the polyamide resin (PA). Specifically, nylon 4 (melting point 268°C), nylon 6 (melting point 225°C), nylon 46 (melting point 240°C), nylon 66 (melting point 265°C), nylon 610 (melting point 222°C), nylon 612 (melting point 215°C). ), nylon 6T (melting point 260°C), nylon 11 (melting point 185°C), nylon 12 (melting point 175°C), copolymer nylon (e.g. nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point: 237° C.), nylon 46, etc. Among these polyamides, nylon 6 and nylon 6/12 are preferred from the viewpoint of film formability and mechanical properties as the base film 1.

As described above, the content of the polyamide resin (PA) is determined by the weight of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1. The ratio (IO):(PA) is preferably in the range of 72:28 to 95:5. When the mass ratio of the polyamide resin (PA) is less than the above range, especially when the degree of neutralization by metal ions of the ionomer of the ethylene/unsaturated carboxylic acid copolymer is low, the base film 1 (dicing tape 10) The effect of increasing the Young's modulus at low temperatures is insufficient, and even if stretched at low temperatures, it is not possible to apply an appropriate cleaving force (external stress) to the die-bond film 3, so the die-bond film 3 cannot be cut cleanly. There is a risk. In addition, even if the base film 1 (dicing tape 10) is expanded, stress in the direction away from the cut die-bond film is difficult to act on, so that the edges (fourth peripheral parts) of the cut die-bond film are There is a possibility that the state in which the dicing tape 10 is partially peeled from the adhesive layer 2 may not be formed.

On the other hand, if the mass ratio of the polyamide resin (PA) exceeds the above range, stable film formation may be difficult depending on the resin composition of the base film 1. Further, the elastic modulus of the base film 1 at 5% elongation at low temperature increases excessively, and there is a possibility that expanding the dicing tape 10 becomes difficult. Furthermore, even if it were possible to expand, the die bond film 3 would peel off excessively from the adhesive layer 2 during expansion, making it difficult to apply sufficient external stress to the die bond film 3 through the adhesive layer 2. There is a risk that the die-bonding film 3 may not be cut cleanly, that a sufficient kerf width may not be secured, or that the kerf width may vary. Furthermore, the flexibility of the base film 1 may be impaired, and the expandability of the dicing tape 10 during the room temperature expansion process may not be maintained, and when picking up a semiconductor chip with a die-bonding film, there may be pickup failures due to cracks in the semiconductor chip, etc. There is a possibility that this may occur. The content of the polyamide resin (PA) is determined by the mass ratio (IO) of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1. :(PA) is more preferably in the range of 74:26 to 92:8, and even more preferably in the range of 80:20 to 90:10.

In addition, when the base film 1 is a laminate consisting of multiple layers, the mass ratio of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) is as follows: Calculated from the mass ratio of the resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in each layer, and the mass ratio of each layer in the entire base film 1 (laminate). means the value for the entire base film 1 (laminate).

If the mass ratio of the resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1 is within the above range, the temperature of the base film 1 at 0°C It becomes easy to adjust the average value (Y _MD +Y _TD )/2 of the elastic modulus at 5% elongation in the range of 165 MPa or more and 260 MPa or less. As a result, the dicing tape 10 has sufficient external strength to break the die bonding film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition, which will be described later, in the cool-expanding process. It is possible to apply stress to the die-bonding film 3 and to form an appropriate peeling state between the edge portion of the cut die-bonding film and the adhesive layer 2 with respect to the adhesive layer 2 of the dicing tape 10. A necessary stress in the direction away from the die-bonding film 3 can be applied. In addition, in this case, since the stress applied to the die bond film 3 and the adhesive layer 2 is moderately suppressed, the cut die bond film does not peel off excessively from the adhesive layer 2, and the kerf width is sufficiently It is also possible to avoid damage caused by collision between semiconductor chips and displacement from a fixed position on the adhesive layer 2. In this case, if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, the pick-up properties of the semiconductor chip with the die-bonding film will be improved compared to the conventional method. can be taken as a thing.

〔others〕
Other resins and various additives may be added to the resin composition constituting the base film 1 as necessary, within a range that does not impair the effects of the present invention. Examples of the other resins include polyolefins such as polyethylene and polypropylene, ethylene/unsaturated carboxylic acid copolymers, and polyether esteramides. Such other resins may be used in an amount of, for example, 20 parts by mass based on a total of 100 parts by mass of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA). Can be blended. In addition, examples of the above-mentioned additives include antistatic agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, antiblocking agents, antifungal agents, antibacterial agents, flame retardants, Examples include flame retardant aids, crosslinking agents, crosslinking aids, foaming agents, foaming aids, inorganic fillers, and fiber reinforcing materials. Such various additives may be added at a ratio of, for example, 5 parts by mass to a total of 100 parts by mass of the resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid copolymer and the polyamide resin (PA). Can be blended.

[Thickness of base film]
The thickness of the base film 1 is not particularly limited, but considering its use as the dicing tape 10, it is preferably in the range of, for example, 70 μm or more and 120 μm or less. More preferably, it is in the range of 70 μm or more and 110 μm or less. If the thickness of the base film 1 is less than 70 μm, there is a risk that the ring frame (wafer ring) may not be held sufficiently when the dicing tape 10 is subjected to a dicing process. Furthermore, if the thickness of the base film 1 is greater than 120 μm, there is a risk that the base film 1 will warp more due to release of residual stress during film formation.

[Layer structure of base film]
The layer structure of the base film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate consisting of multiple layers of the same resin composition, or a laminate consisting of multiple layers of the same resin composition, or It may be a laminate consisting of multiple layers of resin compositions. In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

When the base film 1 is a laminate consisting of a plurality of layers, for example, it may have a structure in which a plurality of layers formed using the resin composition of the present embodiment are laminated; A layer formed using the resin composition of this embodiment may be laminated with a layer formed using a resin composition other than the resin composition of this embodiment.

Layers formed using other resin compositions include, for example, linear low density polyethylene (LLDPE), low density polyethylene (LDPE), ethylene-α olefin copolymer, polypropylene, ethylene/unsaturated carbon Acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid Alkyl ester/carbon monoxide copolymers or unsaturated carboxylic acid graft products thereof, a single substance or a blend of any plurality thereof, ionomers (IO) of the above ethylene/unsaturated carboxylic acid copolymers, etc. Examples include a layer formed using a resin composition. Among these, from the viewpoint of adhesion and versatility with the resin layer made of a mixture of a resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA), , ethylene/unsaturated carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer and ionomer of these copolymers, ethylene -α-olefin copolymers and the like are preferred.

As an example of the case where the base film 1 of this embodiment has a laminated structure, specifically, the base film has the following two-layer structure or three-layer structure.

For example, as a two-layer structure,
(1) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer consisting of a mixture of a resin (IO1) consisting of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA1)],
(2) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer made of a mixture of a resin (IO2) made of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA2)],
(3) [First resin layer made of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer]/[made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment a second resin layer made of a mixture of resin (IO1) and polyamide resin (PA1)],
(4) [ First resin layer made of ethylene/unsaturated carboxylic acid copolymer]/[Resin (IO1) made of ionomer of ethylene/unsaturated carboxylic acid copolymer of this embodiment and polyamide second resin layer consisting of a mixture of resin (PA1)],
A two-layer structure ([first resin layer]/[second resin layer]) consisting of the same resin layer or different resin layers may be mentioned.

For example, as a three-layer structure,
(5) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer made of a mixture of a resin (IO1) made of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA1)]/[Ethylene-unsaturated carboxylic acid copolymer of this embodiment] a third resin layer made of a mixture of a resin made of an ionomer (IO1) and a polyamide resin (PA1)],
(6) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene of this embodiment・Second resin layer made of a mixture of a resin (IO2) made of an ionomer of an unsaturated carboxylic acid copolymer and a polyamide resin (PA2)]/[Ethylene-unsaturated carboxylic acid copolymer of this embodiment] a third resin layer made of a mixture of a resin made of an ionomer (IO1) and a polyamide resin (PA1)],
(7) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[ethylene/unsaturated carboxylic acid [Second resin layer made of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of this embodiment]/[Resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1) a third resin layer consisting of a mixture of],
(8) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[ethylene/unsaturated carboxylic acid [Second resin layer made of an ionomer of the ethylene/unsaturated carboxylic acid copolymer of this embodiment]/[Third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1) ],
(9) [First resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of this embodiment and a polyamide resin (PA1)]/[Ethylene-α olefin copolymer Second resin layer consisting of a combination]/[Third resin layer consisting of a mixture of a resin (IO1) consisting of an ionomer of an ethylene/unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)],
A three-layer structure ([first resin layer]/[second resin layer]/[third resin layer]) consisting of the same resin layer or different resin layers may be mentioned.

[Method for forming base film]
As a method for forming the base film 1 of this embodiment, a conventional method can be adopted. A resin composition obtained by melting and kneading ionomer resin (IO) and polyamide resin (PA), with other components added as necessary, can be processed, for example, by T-die casting, T-die nip molding, inflation molding, or extrusion lamination. It may be processed into a film by various molding methods such as molding method and calendar molding method. In addition, when the base film 1 is a laminate consisting of multiple layers, each layer is formed separately by a method such as a calendar molding method, an extrusion method, or an inflation molding method, and then they are thermally laminated or bonded with an adhesive as appropriate. A laminate can be manufactured by laminating the materials by the following method. Examples of the adhesive include a single substance or a blend of any plurality of the above-mentioned ethylene copolymers or unsaturated carboxylic acid grafts thereof. Alternatively, a laminate can also be manufactured by simultaneously extruding the resin compositions of each layer by a coextrusion lamination method. Note that the surface of the base film 1 that is in contact with the adhesive layer 2 may be subjected to corona treatment, plasma treatment, or the like for the purpose of improving adhesion to the adhesive layer 2, which will be described later. In addition, the surface of the base film 1 opposite to the side in contact with the adhesive layer 2 is coated with a shibo roll for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation. An embossing process or the like may be performed.

(Adhesive layer)
The adhesive layer 2 containing the active energy ray-curable adhesive composition, which is the second component of the dicing tape 10 of the present invention, will be described below.

As described above, the adhesive layer 2 includes an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate crosslinking agent that crosslinks with the hydroxyl group. An active energy ray-curable adhesive composition containing: In the active energy ray-curable adhesive composition, a polyisocyanate crosslinking agent is added to 100 parts by mass of an acrylic adhesive polymer having a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. The equivalent ratio (-- NCO/-OH) is adjusted within the range of 0.14 or more and 1.32 or less. The adhesive layer 2 of the dicing tape 10 has an adhesive force A of 3.50 N/25 mm or less after irradiation with ultraviolet rays under aerobic conditions to a stainless steel plate (SUS304/BA plate) at 23° C. and 0.25 N/25 mm. It has an adhesive force B after irradiation with ultraviolet rays in the absence of oxygen to a stainless steel plate (SUS304/BA plate) in the range of 0.70 N/25 mm or less.

[Acrylic adhesive polymer]
The acrylic adhesive polymer contained as a main component in the active energy ray-curable adhesive composition is an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, and has an active energy ray-curable adhesive composition of 12.0 mgKOH/g. It has a hydroxyl value in the range of 40.5 mgKOH/g. The acrylic adhesive polymer preferably accounts for 90% by mass or more and 100% by mass or less, and 95% by mass or more and 100% by mass or less of the total mass of the active energy ray-curable adhesive composition. It is more preferable.

The above-mentioned active energy ray-reactive acrylic adhesive polymer having a carbon-carbon double bond and a hydroxyl group is usually made of a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer as a base polymer, although the details will be described later. A copolymer (adhesive acrylic polymer having hydroxyl groups) is obtained by copolymerizing with, and the copolymer has an isocyanate group and a carbon-carbon double bond that can undergo an addition reaction with the hydroxyl group. It is obtained by an addition reaction of a compound (active energy ray-reactive compound).

As mentioned above, the main chain (main skeleton) of the acrylic adhesive polymer having a hydroxyl group is a copolymer containing at least an alkyl (meth)acrylate monomer and a hydroxyl group-containing monomer as a copolymer component. Composed of polymers. The glass transition temperature (Tg) of the main chain of the hydroxyl group-containing acrylic adhesive polymer is not particularly limited, but is preferably in the range of -65°C or more and -45°C or less. Here, the glass transition temperature (Tg) is a theoretical value calculated from the Fox formula shown in the following general formula (1) based on the composition of the monomer components constituting the acrylic adhesive polymer. be.

1/Tg=W ₁ /Tg ₁ +W ₂ /Tg ₂ +...+W _n /Tg _n General formula (1)

[In the above general formula (1), Tg is the glass transition temperature (unit: K) of the acrylic adhesive polymer, and Tg _i (i=1, 2,...n) is the homopolymer of monomer i. It is the glass transition temperature (unit: K) at the time of formation, and W _i (i=1, 2, . . . n) represents the mass fraction of monomer i in all monomer components. ]

The glass transition temperature (Tg) of a homopolymer can be found, for example, in "Polymer Handbook" (edited by J. Brandrup and E.H. Immergut, Interscience Publishers).

If the glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer (copolymer) having hydroxyl groups is less than -65°C, especially if the amount of the crosslinking agent described below is small, the copolymer When the adhesive layer 2 containing the dicing tape 10 becomes excessively soft and is cool-expanded, the cut die-bonding film may be partially peeled off from the adhesive layer 2 of the dicing tape 10 at its edges (around the four sides). There is a possibility that the condition that has been created may not be formed. Furthermore, in the pick-up process after irradiation with ultraviolet rays, there is a risk that the semiconductor chip with the die-bonding film will be difficult to peel off from the adhesive layer 2, and that adhesive residue (contamination) may occur on the surface of the die-bonding film 3. As a result, the yield of non-defective semiconductor chips with die-bonding films decreases.

On the other hand, if the glass transition temperature (Tg) exceeds -45°C, especially if the amount of the crosslinking agent (described later) is large, the adhesive layer 2 containing these will become excessively hard, resulting in poor wettability to the die-bonding film 3. - Since the followability deteriorates and the initial adhesion to the die bond film 3 deteriorates, the die bond film 3 is excessively peeled off from the adhesive layer 2 in the cool expand process, and the die bond film 3 is not bonded to the die bond film 3 through the adhesive layer 2. There is a possibility that the die-bonding film 3 cannot be cut cleanly because sufficient external stress cannot be applied, or that a sufficient kerf width cannot be secured, or that the kerf width may vary. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. The glass transition temperature (Tg) is preferably in the range of -63°C to -51°C, more preferably in the range of -61°C to -54°C.

Examples of the (meth)acrylic acid alkyl ester monomer include hexyl (meth)acrylate having 6 to 18 carbon atoms, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, Nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl ( meth)acrylate, hexadecyl(meth)acrylate, heptadecyl(meth)acrylate, octadecyl(meth)acrylate, or monomers having 5 or less carbon atoms, pentyl(meth)acrylate, n-butyl(meth)acrylate, isobutyl( Examples include meth)acrylate, ethyl(meth)acrylate, methyl(meth)acrylate, and the like. Among these, it is preferable to use 2-ethylhexyl acrylate, which accounts for 40% by mass or more and 85% by mass based on the total amount of monomer components constituting the main chain of the acrylic adhesive polymer (copolymer) having hydroxyl groups. It is preferable to include it in the following range.

In addition, examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, and 8-hydroxypropyl (meth)acrylate. Examples include hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate, and the like. The purpose of copolymerizing the above-mentioned hydroxyl group monomer is, firstly, to provide an addition reaction point for introducing active energy ray-reactive carbon-carbon double bonds, which will be described later, into the above-mentioned acrylic adhesive polymer by an addition reaction. (-OH), secondly, the acrylic adhesive polymer is made to have a high molecular weight by reacting the hydroxyl group with the isocyanate group (-NCO) of a polyisocyanate crosslinking agent described below, and then In order to provide crosslinking reaction points for imparting cohesive force and appropriate hardness to the adhesive layer 2 of When introducing the hydroxyl group monomer by addition reaction, the content of the hydroxyl group monomer is, for example, 16.4% by mass or more and 34.4% by mass based on the total amount of the copolymer monomer components. It is preferable to adjust it within the following range. That is, adjusting the content of the hydroxyl monomer in the above copolymer within the above range is necessary to reduce the hydroxyl value of the acrylic adhesive polymer and the below-mentioned requirements for the adhesive composition of the present invention. The equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer (-NCO/-OH) can be easily controlled within the above-mentioned predetermined range. Therefore, it is suitable.

The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is produced by copolymerizing the acrylic adhesive polymer having a hydroxyl group, and then the copolymer has a hydroxyl group in a side chain. It is easy to follow the reaction (stability of control) by adding a compound having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compound) that can be subjected to an addition reaction. It is the most suitable from the viewpoint of technical difficulty. Examples of such compounds having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compounds) include isocyanate compounds having a (meth)acryloyloxy group. Specific examples include 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, and the like.

The above addition reaction is preferably carried out in the presence of an organometallic catalyst to promote the reaction. As such an organometallic catalyst, it is preferable to use at least one selected from an organic compound containing zirconium, an organic compound containing titanium, and an organic compound containing tin. The amount of the organometallic catalyst is not particularly limited, but is preferably in the range of 0.01 parts by mass or more and 5 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer.

Further, in the above addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained. As such a polymerization inhibitor, a quinone-based polymerization inhibitor such as hydroquinone monomethyl ether is preferable. The amount of the polymerization inhibitor is not particularly limited, but it is usually preferably in the range of 0.01 parts by mass or more and 0.1 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer.

When carrying out the above addition reaction, the acrylic adhesive polymer is crosslinked with a polyisocyanate crosslinking agent added later to further increase the molecular weight and give the adhesive layer 2 a cohesive force and appropriate strength before irradiation with active energy rays. In order to impart a certain degree of hardness, it is necessary to ensure that a desired amount of hydroxyl groups remain in the adhesive composition, while at the same time keeping the active energy ray-reactive carbon-carbon double bond concentration within the desired range. It also needs to be controlled. It is necessary to take both of these points into consideration. For example, when reacting an isocyanate compound having a (meth)acryloyloxy group with a copolymer having a hydroxyl group in its side chain, one guideline is to ) The isocyanate compound having an acryloyloxy group is preferably added to the hydroxyl group-containing monomer of the acrylic adhesive polymer in an amount ranging from 37 mol% to 84 mol%. .

In addition to the above-mentioned (meth)acrylic acid alkyl ester monomer and hydroxyl group-containing monomer, the above-mentioned acrylic adhesive polymer may contain other substances as necessary for the purpose of adjusting adhesive strength, glass transition temperature (Tg), etc. The copolymerized monomer components may be copolymerized. Examples of such other comonomer components include carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid, maleic anhydride, and anhydrous Acid anhydride group-containing monomers such as itaconic acid, (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol (meth)acrylamide, N-methylolpropane (meth)acrylamide, ) Acrylamide, amide monomers such as N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, ( Examples include monomers having a functional group, such as amino group-containing monomers such as t-butylaminoethyl meth)acrylate, and glycidyl group-containing monomers such as glycidyl (meth)acrylate. The content of the monomer having such a functional group is not particularly limited, but is preferably in the range of 0.5% by mass or more and 30% by mass or less based on the total amount of copolymerizable monomer components.

When such a monomer having a functional group other than a hydroxyl group is copolymerized, the active energy ray-reactive carbon-carbon double bond can be introduced into the acrylic adhesive polymer using the functional group. You can also do it. For example, when an acrylic adhesive polymer has a carboxyl group in its side chain, a method of reacting it with an active energy ray-reactive compound such as glycidyl (meth)acrylate or 2-(1-aziridinyl)ethyl (meth)acrylate, When the adhesive polymer has a glycidyl group in its side chain, the active energy ray- reactive carbon-carbon is added to the acrylic adhesive polymer by a method of reacting with an active energy ray-reactive compound such as (meth)acrylic acid. Double bonds can also be introduced. However, when copolymerizing a monomer with a functional group other than a hydroxyl group and using the functional group to introduce an active energy ray-reactive carbon-carbon double bond into an acrylic adhesive polymer, one guideline is As such, the content of the hydroxyl monomer copolymerized at the same time can be adjusted, for example, in the range of 2.5% by mass or more and 8.4% by mass or less based on the total amount of the copolymer monomer components. preferable. By doing so, the hydroxyl value of the acrylic adhesive polymer, the equivalent ratio (-NCO/- --OH) can be easily controlled within the above-mentioned predetermined range, which is preferable.

Furthermore, the acrylic adhesive polymer having the above-mentioned functional groups may contain other comonomer components as necessary for the purpose of cohesive force, heat resistance, etc., within a range that does not impair the effects of the present invention. You may. Specifically, such other comonomer components include, for example, cyano group-containing monomers such as (meth)acrylonitrile, and olefin monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene. , styrene monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, and chloride. Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate, ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- Vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-( Examples include monomers having a nitrogen atom-containing ring such as meth)acryloylmorpholine. These other comonomer components may be used alone or in combination of two or more.

In this embodiment, a suitable copolymer having a hydroxyl group obtained by copolymerizing the above-mentioned monomers is specifically a binary copolymer of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate. , a terpolymer of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, a terpolymer of 2-ethylhexyl acrylate, n-butyl acrylate, and 2-hydroxyethyl acrylate, Ternary copolymer of 2-ethylhexyl acrylate, methyl methacrylate, and 2-hydroxyethyl acrylate, quaternary copolymer of 2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid Examples include polymers, quaternary copolymers of 2-ethylhexyl acrylate, methyl methacrylate, 2-hydroxyethyl acrylate, and methacrylic acid, but are not particularly limited thereto. Then, 2-methacryloyloxyethyl isocyanate is added as an isocyanate compound having a (meth)acryloyloxy group to these suitable copolymers to form an active energy ray-reactive carbon-carbon double bond and a hydroxyl group. Preferably, it is an acrylic adhesive polymer.

The acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups thus obtained has a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. When the above-mentioned hydroxyl value is less than 12.0 mgKOH/g, if the hydroxyl value is excessively small, crosslinking after addition of the polyisocyanate crosslinking agent will be insufficient, and the cohesive strength of the adhesive layer 2 before active energy ray irradiation will result. As a result, there is a risk that adhesive residue may be generated on the die bonding film 3 during pick-up, and there is a risk that adhesive residue may be generated on the ring frame when the dicing tape 10 is peeled off from the SUS ring frame after a series of steps are completed. In addition, since it is not possible to impart appropriate hardness to the adhesive layer 2 before irradiation with active energy rays, the dicing tape 10 There is a possibility that a state in which the adhesive layer 2 is partially peeled off may not be formed. As a result, the effect of improving the pick-up property is not seen or the pick-up property is lowered compared to the conventional method.

On the other hand, when the hydroxyl value exceeds 40.5 mgKOH/g, especially when the amount of polyisocyanate crosslinking agent added is small, the concentration of residual hydroxyl groups after the crosslinking reaction in the active energy ray-curable adhesive composition becomes excessively large. , there is a risk that the initial adhesion of the adhesive layer 2 to the die-bonding film 3 may become greater than necessary. In this case, when cool-expanding, there is a risk that the cut die bond film will not be partially peeled from the adhesive layer 2 of the dicing tape 10 at its edge portions (four peripheral portions), and In the pick-up process after irradiation with active energy rays, there is a risk that the semiconductor chip with the die-bond film will be difficult to peel off from the adhesive layer 2 in the close contact area where the adhesive layer 2 and the die-bond film 3 did not peel off due to the expansion in the previous process. be. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. The above hydroxyl value is preferably in the range of 12.5 mgKOH/g or more and 40.1 mgKOH/g or less, more preferably in the range of 12.7 mgKOH/g or more and 30.1 mgKOH/g or less.

When the hydroxyl value is in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g, the pressure-sensitive adhesive layer 2 can have cohesive strength and appropriate hardness in combination with the addition of a specific amount of polyisocyanate crosslinking agent, which will be described later. Since the adhesive layer 2 can be given strength and polarity, the initial adhesion of the adhesive layer 2 to the die-bonding film 3 can be appropriately maintained, while the adhesive force of the adhesive layer 2 can be reduced by irradiation with active energy rays. In the cool-expanding step, the cut edge portions of the die-bonding film 3 can be appropriately peeled from the adhesive layer 2 without hindering the process.

Further, the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups is not particularly limited, but preferably has an acid value in the range of 0 mgKOH/g to 9.0 mgKOH/g. . When the acid value is within the above range, the initial adhesion of the adhesive layer 2 to the die-bonding film 3 can be appropriately maintained, while the effect of reducing the adhesive force of the adhesive layer 2 due to active energy ray irradiation is not hindered. In the cool expansion process, it becomes easy to form an appropriate peeling state from the adhesive layer 2 on the cut edge portions of the die-bonding film 3. The acid value is more preferably in the range of 2.0 mgKOH/g or more and 8.2 mgKOH/g or less, and even more preferably in the range of 2.5 mgKOH/g or more and 5.6 mgKOH/g or less.

Further, the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group preferably has a weight average molecular weight Mw in the range of 200,000 to 2,000,000. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography. When the weight average molecular weight Mw of the acrylic adhesive polymer is less than 200,000, taking into consideration coating properties, etc., an active energy ray-curable acrylic adhesive composition with a high viscosity of several thousand cP to tens of thousands of cP is used. It is difficult to obtain a solution of the substance, which is undesirable. In addition, the cohesive force of the adhesive layer 2 before active energy ray irradiation becomes small, and when the semiconductor chip with die bond film 3 attached is detached from the adhesive layer 2 after active energy ray irradiation, the die bond film of the semiconductor wafer with die bond film There is a risk of contaminating the surface. Further, when the dicing tape 10 is peeled off from the SUS ring frame after a series of steps are completed, there is a possibility that adhesive residue may be left on the ring frame.

On the other hand, when the weight average molecular weight Mw exceeds 2 million, it is difficult to mass-produce an active energy ray-curable acrylic adhesive polymer. It may gel, which is not preferable. In addition, if the amount of polyisocyanate crosslinking agent added is large, the wettability and followability of the adhesive layer 2 to the die bond film 3 before irradiation with active energy rays will decrease, and the initial adhesion will decrease, so in the cool expand process. , the die bond film 3 may peel off excessively from the adhesive layer 2, and sufficient external stress cannot be applied to the die bond film 3 via the adhesive layer 2, and the die bond film 3 may not be cut cleanly. , there is a risk that a sufficient kerf width cannot be secured or that the kerf width varies. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. The weight average molecular weight Mw is preferably in the range of 300,000 to 1,000,000.

[Crosslinking agent]
The active energy ray-curable adhesive composition of the present embodiment is produced by increasing the molecular weight of the above-mentioned acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group by crosslinking, and then irradiating the active energy ray-curable adhesive composition. In order to impart cohesive force and appropriate hardness to the previous adhesive layer 2, a polyisocyanate-based crosslinking agent is further contained. Examples of the polyisocyanate crosslinking agent include a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound obtained by reacting trimethylolpropane with hexamethylene diisocyanate, and an adduct obtained by reacting trimethylolpropane with tolylene diisocyanate. Examples include polyisocyanate compounds, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and isophorone diisocyanate. These can be used alone or in combination of two or more. Among these, from the viewpoint of versatility, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and tolylene diisocyanate and/or adduct polyisocyanate compounds obtained by reacting trimethylolpropane and hexamethylene diisocyanate are preferably used.

Adduct polyisocyanate compounds made by reacting trimethylolpropane and tolylene diisocyanate include Coronate L-45E, Coronate L-55E, and Coronate L (all trade names) manufactured by Tosoh Corporation and Takenate manufactured by Mitsui Chemicals Co., Ltd. Commercially available products such as D101E (trade name) can also be used. In addition, as adduct polyisocyanate compounds made by reacting trimethylolpropane and hexamethylene diisocyanate, commercially available products such as Coronate HL (trade name) manufactured by Tosoh Corporation and Takenate D160N (trade name) manufactured by Mitsui Chemicals, Inc. It can also be used.

The polyisocyanate crosslinking agent is an acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups and having a hydroxyl value in the range of 12.0 mgKOH/g to 40.5 mgKOH/g. Contained in the range of 2.4 parts by mass or more and 7.0 parts by mass based on 100 parts by mass, the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer. The equivalent ratio (-NCO/-OH) is adjusted to be in the range of 0.14 or more and 1.32 or less.

When the above equivalent ratio (-NCO/-OH) is less than 0.14, especially when the hydroxyl value of the acrylic adhesive polymer is small, appropriate hardness is imparted to the adhesive layer 2 before irradiation with active energy rays. Therefore, when cool-expanding the die-bonding film, there is a risk that the cut die-bonding film may not be partially peeled from the adhesive layer 2 of the dicing tape 10 at its edge portions (four peripheral portions). . As a result, the effect of improving the pick-up property is not seen or the pick-up property is lowered compared to the conventional method.
In addition, especially if the hydroxyl value of the acrylic adhesive polymer is high, when cool-expanded, the cut die-bond film may have some parts from the adhesive layer 2 of the dicing tape 10 on its edge portions (surrounding portions on all sides). There is a risk that a peeled state will not be formed, and the concentration of residual hydroxyl groups after the crosslinking reaction in the active energy ray-curable adhesive composition will become excessively high, and the initial adhesion of the adhesive layer 2 to the die bond film 3 may be higher than necessary. There is a risk that it will become larger. As a result, in the pick-up process after active energy ray irradiation, the semiconductor chip with the die-bond film is difficult to peel off from the adhesive layer 2 in the close contact area where the adhesive layer 2 and the die-bond film 3 did not separate due to the expansion in the previous process. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases.

On the other hand, when the above equivalent ratio (-NCO/-OH) exceeds 1.32, the adhesive layer 2 before active energy ray irradiation becomes excessively hard, resulting in die bonding of the adhesive layer 2 before active energy ray irradiation. Since the wettability and conformability to the film 3 are reduced and the initial adhesion is reduced, the die bond film 3 is excessively peeled off from the adhesive layer 2 in the cool expand process, and the adhesive layer 2 is not attached to the die bond film 3. There is a possibility that the die-bonding film 3 cannot be cut cleanly because a sufficient external stress cannot be applied through the die-bonding film 3, that a sufficient kerf width cannot be secured, or that the kerf width varies. In addition, as the rigidity of the adhesive layer 2 increases, the bending elastic modulus of the dicing tape 10 increases, and even if the dicing tape 10 is pushed up with a pushing up jig in the pick-up process, the curvature of the dicing tape 10 is small, and the die bond film There is a possibility that peeling of the four edges of the attached semiconductor chip from the adhesive layer 2 will be difficult to promote. As a result, the pick-up yield of semiconductor chips with die-bonding films decreases. In addition, the adhesive force of the adhesive layer 2 to the SUS ring frame may be insufficient, and the dicing tape 10 may peel off from the SUS ring frame during expansion of the dicing tape 10, which may prevent the expansion process from being performed normally. There is.

In this way, the adhesive layer 2 containing the active energy ray-curable adhesive composition in which the added amount of the polyisocyanate crosslinking agent and the equivalent ratio (-NCO/-OH) have been adjusted has a In a low-temperature environment, hardness that can transmit a moderate impact to the interface between the edge portion of the die-bond film and the adhesive layer 2 immediately below it at the moment the die-bond film 3 is cut, and stress in the direction away from the die-bond film 3. In addition to having a cohesive force that can transmit the following, it can also have a suitable initial adhesion force to the die bond film 3. Therefore, by subjecting the dicing tape 10 in which the adhesive layer 2 is laminated to the base film 1 described above to the cool expand process, the die bond film 3 can be cut cleanly, and the die bond film 3 can be cut cleanly. , it is possible to appropriately and intentionally form a state in which the dicing tape 10 is partially peeled off from the adhesive layer 2 at its edge portions (four peripheral portions). The equivalent ratio (-NCO/-OH) is preferably in the range of 0.30 or more and 0.90 or less.

Here, the equivalent ratio (NCO/OH) between the isocyanate group (NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer in the active energy ray-curable adhesive composition is The total number of moles of isocyanate groups calculated from the content of the polyisocyanate crosslinking agent and the average number of isocyanate groups per molecule of the polyisocyanate crosslinking agent is the active energy ray-reactive carbon-carbon double This is a theoretically calculated value divided by the total number of moles of hydroxyl groups that the acrylic adhesive polymer has after bonding has been introduced. The total number of moles of hydroxyl groups is, for example, a base polymer containing (meth)acryloyloxy groups in order to introduce an active energy ray-reactive carbon-carbon double bond into an acrylic adhesive polymer having hydroxyl groups. When an addition reaction is carried out using an isocyanate compound, the total number of moles of hydroxyl groups in the acrylic adhesive polymer, which is the base polymer, is calculated by a crosslinking reaction between the isocyanate compound having an added (meth)acryloyloxy group and the isocyanate group. It is the value obtained by subtracting the number of moles of hydroxyl groups consumed (=the number of moles of isocyanate groups of the isocyanate compound having a (meth)acryloyloxy group).

In addition, in the active energy ray curable adhesive composition in which the added amount of the polyisocyanate crosslinking agent and the above equivalent ratio (-NCO/-OH) are adjusted to the above range, the active energy ray curable adhesive composition The concentration of residual hydroxyl groups per gram after the crosslinking reaction is preferably in the range of 0 mmol or more and 0.60 mmol or less. More preferably, it is in the range of 0.02 mmol or more and 0.40 mmol or less. Here, the concentration of residual hydroxyl groups after crosslinking reaction per 1 g of active energy ray-curable adhesive composition refers to the total concentration of hydroxyl groups possessed by the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds and hydroxyl groups. Active energy ray curing is calculated by subtracting the number of moles of hydroxyl groups theoretically consumed by the crosslinking reaction with the isocyanate groups of the added polyisocyanate crosslinking agent (= the number of moles of isocyanate groups of the crosslinking agent) from the number of moles. The value is calculated per 1 g of adhesive composition.

When the concentration of residual hydroxyl groups after the crosslinking reaction per 1 g of the active energy ray-curable adhesive composition is within the above range, the initial adhesive strength of the adhesive layer 2 to the die bond film 3 and the adhesive strength to the SUS ring frame can be made moderate. Therefore, by subjecting the dicing tape 10 in which the above-mentioned adhesive layer 2 is laminated to the above-mentioned base film 1 to a cool-expanding process, the dicing tape is applied to the edge portions (four periphery portions) of the cut die bond film. It becomes easy to appropriately and intentionally form a state in which the adhesive layer 2 of No. 10 is partially peeled off.

After forming the adhesive layer 2 with the active energy ray-curable adhesive composition, the aging conditions for reacting the polyisocyanate crosslinking agent with the hydroxyl group-containing acrylic adhesive polymer are particularly limited. However, for example, the temperature may be set as appropriate in the range of 23° C. or more and 80° C. or less, and the time may be set as appropriate in the range of 24 hours or more and 168 hours or less.

[Photopolymerization initiator]
The active energy ray-curable adhesive composition of this embodiment includes a photopolymerization initiator that generates radicals upon irradiation with active energy rays. The photopolymerization initiator senses the irradiation of active energy rays to the active energy ray curable acrylic adhesive composition, generates radicals, and activates the carbon-carbon double bond possessed by the active energy ray curable acrylic adhesive polymer. Initiate the bond cross-linking reaction.

The photopolymerization initiator is not particularly limited, and conventionally known ones can be used. Specifically, for example, an alkylphenone photopolymerization initiator, an acylphosphine oxide photopolymerization initiator, an oxime ester photopolymerization initiator, etc. can be used. Examples of alkylphenone photopolymerization initiators include α-hydroxyalkylphenone radical polymerization initiators, α-hydroxyacetophenone radical polymerization initiators, α-aminoalkylphenone radical polymerization initiators, and benzyl methyl ketal radical polymerization initiators. etc.

The above photopolymerization initiators may be used alone or in combination of two or more types as long as the effects of the present invention are achieved, but in the active energy ray-curable adhesive composition of this embodiment, these photopolymerization initiators Among the polymerization initiators, α-aminoalkylphenone photopolymerization is used as a photopolymerization initiator from the viewpoint of effectively reducing both the adhesive strength A after UV irradiation under oxygen conditions and the adhesive strength B after UV irradiation under anoxic conditions. Photopolymerization of at least three types of systems: an initiator (a), an alkylphenone photoinitiator other than an α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photoinitiator (c) Preferably, an initiator is included.

In the present invention, "adhesive strength A after irradiation with ultraviolet light under aerobic conditions" refers to the adhesive force A after peeling off the release liner of the dicing tape 10 and with the two sides of the adhesive layer exposed to the air (under aerobic conditions). It refers to the adhesive strength measured when the two surfaces of the adhesive layer are directly irradiated with ultraviolet rays as energy rays and then attached to an adherend (SUS304/BA board). This is because when picking up a semiconductor chip with a die-bond film, "the part of the adhesive layer 2 where the die-bond film 3 that was cut during expansion is peeled off" is exposed to the air and is irradiated with ultraviolet rays. Therefore, the adhesive force of the dicing tape 10 to the die bond film 3 when the die bond film 3 is re-adhered to the adhesive layer 2 after being exposed to the air and irradiated with ultraviolet rays is This is assumed based on a model, and represents the ease with which the re-fixed portion is peeled off during the pick-up process. The smaller the adhesive force value is, the weaker the re-fixing force is, and the easier it is to peel off the die-bonding film-attached semiconductor chip from the adhesive layer 2 of the dicing tape 10.

In addition, "adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment" means that the release liner of the dicing tape 10 is peeled off, the second side of the adhesive layer is attached to the adherend (SUS304/BA board), and the second side of the adhesive layer is It means the adhesive force measured after irradiating the adhesive layer 2 with ultraviolet rays as sexual energy rays through the base film 1 of the dicing tape 10 in a state where it is not exposed to the air (under oxygen-free conditions). This means that when picking up a semiconductor chip with a die-bond film, "the part of the adhesive layer 2 where the die-bond film 3 that was cut during expansion was in close contact without peeling off" is not exposed to the air. This model assumes the adhesive force of the dicing tape 10 to the die bond film 3 when the adhesive layer 2 is irradiated with ultraviolet rays without being exposed to the air. , which represents the ease with which the adhered portions other than the re-adhered portions are peeled off during the pick-up process. The smaller the value of the adhesive force, the easier it becomes to peel off the semiconductor chip with the die bond film from the adhesive layer 2 of the dicing tape 10. Details of these adhesive force measurement methods will be described later.

Specifically, the α-aminoalkylphenone photopolymerization initiator (a) is, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, manufactured by IGM Resins B.V.) or 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone (trade name: Omnirad 369, manufactured by IGM Resins B.V.), 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (trade name: Omnirad379EG, manufactured by IGM Resins B.V.), etc. can be mentioned. These may be used alone or in combination of two or more.

Among these, as the α-aminoalkylphenone photopolymerization initiator (a), 2-benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone or 2-dimethylamino-2 -(4-Methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one is preferably used.

The α-aminoalkylphenone photopolymerization initiator (a) is particularly effective in reducing the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen conditions. However, on the other hand, the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in an oxygen-free environment tends to increase as the content of the photopolymerization initiator (a) increases. Used in combination with an alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator and an acylphosphine oxide photopolymerization initiator (c), which is effective in reducing adhesive strength B after irradiation with lower UV rays. It is preferable that the content of the photopolymerization initiator (a) is also kept within the range described below.

As the alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator, as mentioned above, α-hydroxyalkylphenone radical polymerization initiator, α-hydroxyacetophenone radical polymerization initiator, etc. and benzyl methyl ketal radical polymerization initiators. These may be used alone or in combination of two or more.

Specific examples of the α-hydroxyalkylphenone photopolymerization initiator include 1-hydroxycyclohexylphenyl ketone (trade name: Omnirad 184, manufactured by IGM Resins B.V.).

Specifically, the α-hydroxyacetophenone photopolymerization initiator includes, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad1173, manufactured by IGM Resins B.V.) , 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one (trade name: Omnirad2959, manufactured by IGM Resins B.V.), 2-hydroxy- Examples include 1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one (trade name: Omnirad127, manufactured by IGM Resins B.V.), etc. .

Specifically, the benzyl methyl ketal photopolymerization initiator includes, for example, 2,2'-dimethoxy-1,2-diphenylethan-1-one (for example, Omnirad 651, manufactured by IGM Resins B.V.) ) etc.

Among these, examples of alkylphenone photopolymerization initiators (b) other than α-aminoalkylphenone photopolymerization initiators include 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-1-{4-[4-(2 -hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one or 2,2'-dimethoxy-1,2-diphenylethan-1-one is preferably used.

The alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator is particularly effective in reducing the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in the absence of oxygen. In addition, although the reduction effect of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions is inferior to that of the above α-aminoalkylphenone photopolymerization initiator (a), there is a certain level of reduction depending on the content. You can get the effect. Therefore, when used in combination with the above α-aminoalkylphenone photopolymerization initiator (a), the effect of reducing the adhesive strength after irradiation with ultraviolet rays under oxygen conditions can be further improved, while the adhesive strength after irradiation with ultraviolet rays under anaerobic conditions can be improved. It becomes easy to reduce the force B.

Specifically, the above acylphosphine oxide photopolymerization initiator (c) includes, for example, 2,4,6 -trimethylbenzoyl-diphenylphosphine oxide (trade name: OmniradTPO, manufactured by IGM Resins B.V.) , bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide (product name: Omnirad 819, manufactured by IGM Resins B.V.), 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (product name: OmniradTPO) , manufactured by IGM Resins B.V.), and the like. These may be used alone or in combination of two or more.

Among these, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide is preferably used as the acylphosphine oxide photopolymerization initiator (c).

The above acylphosphine oxide photopolymerization initiator (c) has an absorption edge extending to a wavelength of 400 nm or more, so the curing speed is fast, especially after irradiation of the adhesive layer 2 with ultraviolet rays in the absence of oxygen. This is effective in further reducing the adhesive force B. In addition, although the reduction effect of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions is inferior to that of the above α-aminoalkylphenone photopolymerization initiator (a), it can be reduced to a certain degree depending on the content. You can get the effect. Therefore, by using the above α-aminoalkylphenone photopolymerization initiator (a) and an alkylphenone photopolymerization initiator other than the above α-aminoalkylphenone photopolymerization initiator (b), it is possible to It becomes easy to further improve the effect of reducing the adhesive force B after irradiation with ultraviolet rays in an oxygen-free environment while further improving the effect of reducing the adhesive force A after irradiation in an auxiliary manner.

The above α-aminoalkylphenone photoinitiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photoinitiator (c) Specific examples of suitable photoinitiator combinations include at least three types of photoinitiators:
(1) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 1-hydroxycyclohexyl phenyl ketone/photopolymerization initiator (c): three types of combinations of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
(2) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one/Photoinitiator (c): Bis( A combination of three types of 2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
(3) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 1-hydroxycyclohexyl phenyl ketone and 2,2'-dimethoxy-1,2-diphenylethan-1-one/photoinitiator (c): bis(2,4,6-trimethylbenzoyl)-phenyl A combination of four types of phosphine oxide,
(4) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 1-hydroxycyclohexyl phenyl ketone and 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one/photopolymerization initiation Agent (c): a combination of four types of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
(5) Photoinitiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one/photoinitiator (b): 2-hydroxy-1-{4-[4-2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one and 2,2'-dimethoxy-1,2- Diphenylethane-1-one/photopolymerization initiator (c): four types of combinations of bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,
etc.

As described above, the active energy ray-curable adhesive composition of the present embodiment includes an α-aminoalkylphenone photopolymerization initiator (a) and an alkylphenone type other than the α-aminoalkylphenone photopolymerization initiator. It is preferable to include at least three types of photopolymerization initiators, a photopolymerization initiator (b) and an acylphosphine oxide photopolymerization initiator (c); in this case, each photopolymerization initiator is (1) When the adhesive layer 2 is irradiated with ultraviolet rays in an oxygen-free condition, the acrylic having an active energy ray-reactive carbon-carbon double bond contained in the adhesive composition Not only does the curing of the adhesive polymer proceed sufficiently within a predetermined period of time, but also (2) even when the adhesive layer 2 is irradiated with ultraviolet rays in an aerobic environment, there is no effect of oxygen inhibition. Significantly suppresses the decrease in curing speed caused by oxidation, and allows the curing of the acrylic adhesive polymer having active energy ray-reactive carbon-carbon double bonds contained in the adhesive composition to a desired level within a predetermined time. This makes it easier. As a result, (1) the bonding surface of the die-bonding film (adhesive layer) 3 in the adhesive layer 2 (the surface that remains in close contact with no peeling even after the expanding process), when irradiated with ultraviolet rays, It becomes easy to give the adhesive layer 2 an adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment within a desired range, which will be described later. Furthermore, (2) the peeled portions of the cut die-bonding film 3 in the adhesive layer 2 formed by the expanding process will be removed when irradiated with ultraviolet rays, as seen in the conventional dicing tape 10. , because the polymerization of the acrylic adhesive polymer with active energy ray-reactive carbon-carbon double bonds is inhibited by oxygen contained in the surrounding air, the adhesive strength does not decrease sufficiently and remains at a high value. It becomes easy to give the adhesive layer 2 a desired range of adhesive strength A after irradiation with ultraviolet rays under aerobic conditions, which will be described later, while avoiding the above-mentioned effects.

As a result, in the pickup process, when the adsorption collet is brought into contact with the top of the semiconductor chip after UV irradiation to the adhesive layer 2 in order to pick up the semiconductor chip with the die-bonding film, the adhesive layer 2 is removed from the adhesive layer 2 due to the expansion in the previous process. It is possible to significantly suppress the influence caused by the edge portion of the die-bonding film of a semiconductor chip with a die-bonding film that has been partially peeled off firmly re-adhering to the adhesive layer 2, which is insufficiently cured due to oxygen inhibition. That is, the re-adhesion force can be weakened to a level where the dicing tape 10 can be easily peeled off by pushing up the jig from the lower surface side, and the adhesive layer 2 and the die bond film of the semiconductor chip with the die bond film can be peeled off. Since suitable adhesion strength B can be imparted even to the surface that is in close contact with the die-bonding film after irradiation with ultraviolet rays in the absence of oxygen, it becomes possible to pick up the semiconductor chip with the die-bonding film from the adhesive layer 2 favorably from then on.

The amount of the photopolymerization initiator added ( if two or more types are used in combination, the total amount) is 1. It is preferably in the range of 2 parts by mass or more and 12.0 parts by mass or less. If the amount of photopolymerization initiator added is less than 1.2 parts by mass, the photoreactivity to active energy rays is insufficient, so even if irradiated with active energy rays, the photoradical crosslinking reaction of the acrylic adhesive polymer will not occur. As a result, the effect of reducing the adhesive force in the adhesive layer 2 after irradiation with ultraviolet rays becomes small both in the presence of oxygen and in the absence of oxygen, and there is a possibility that pick-up failures of semiconductor chips may increase. On the other hand, if the amount of the photopolymerization initiator added exceeds 12.0 parts by mass, the effect is saturated, which is also unfavorable from the economic point of view. Further, depending on the type of photopolymerization initiator, the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in an oxygen-free environment may become larger than a desired value, which may increase the pickup failure of the semiconductor chip with the die-bonding film.

In an embodiment including certain preferred three types of photopolymerization initiators, an α-aminoalkylphenone photoinitiator (a), an alkylphenone photopolymerization initiator other than the α-aminoalkylphenone photoinitiator The amount of each of the agent (b) and the acylphosphine oxide photopolymerization initiator (c) is determined based on 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. The phenone photoinitiator (a) is in the range of 0.8 parts by mass or more and 5.0 parts by mass or less, and the alkylphenone photoinitiator (b) other than the above α-aminoalkylphenone photoinitiator is: The above acylphosphine oxide photopolymerization initiator (c) may be adjusted in a range of 0.2 parts by mass or more and 5.0 parts by mass or less, and 0.2 parts by mass or more and 2.0 parts by mass or less. preferable.

If the amount of the α-aminoalkylphenone photopolymerization initiator (a) added is less than 0.8 parts by mass, the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under aerobic conditions does not decrease to the desired value. There is a risk. On the other hand, when the amount of the α-aminoalkylphenone photopolymerization initiator (a) added exceeds 5.0 parts by mass, the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet rays in the absence of oxygen is lower than the desired value. There is also a risk that it will become larger. Moreover, there is a possibility that the storage stability of the dousing tape 10 will be deteriorated. When the amount of the alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator is less than 0.2 parts by mass, the adhesive layer 2 is There is a possibility that the adhesive strength may not decrease to the desired value after irradiation with ultraviolet rays. If the amount of the alkylphenone photopolymerization initiator (b) other than the above α-aminoalkylphenone photopolymerization initiator exceeds 5.0 parts by mass, the effect will be saturated, and from an economical point of view. Undesirable. Moreover, there is a possibility that the storage stability of the dousing tape 10 will be deteriorated. When the amount of the acylphosphine oxide photopolymerization initiator (c) added is less than 0.2 parts by mass, the adhesive strength of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen and anoxic conditions reaches the desired value. There is a possibility that the temperature may not decrease to below. If the amount of the acylphosphine oxide photopolymerization initiator (c) added exceeds 2.0 parts by mass, the effect will be saturated and this is not preferred from the economic point of view. Furthermore, depending on the amount of the other photopolymerization initiators (a) and (b) added, the storage stability of the dossing tape 10 may deteriorate.

The above α-aminoalkylphenone photoinitiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photoinitiator (c) When the amount of each added is adjusted within the above range, as described above, the adhesive layer 2 will be irradiated with ultraviolet rays in both oxygen and non-oxygen conditions, thereby increasing its adhesive strength. can be lowered to a desired level, and the semiconductor chip with the die-bonding film can be favorably picked up from the adhesive layer 2 in the pick-up process.

In addition, as a sensitizer for the photopolymerization initiator, compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate may be added to the active energy ray-curable acrylic adhesive composition within a range that does not impair the effects of the present invention. It can be added to things.

[others]
The active energy ray curable adhesive composition of the present embodiment may optionally contain an active energy ray curable compound (for example, a polyfunctional urethane acrylate) , as long as the effects of the present invention are not impaired. Additives such as tackifiers, fillers, anti-aging agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, and leveling agents may also be added.

[Active energy ray-reactive carbon-carbon double bond concentration]
The active energy ray-curable adhesive composition of the present embodiment is not particularly limited, but has an active energy ray-reactive carbon-carbon double bond concentration of 0.85 meq or more per 1 g of the active energy ray-curable adhesive composition. It is preferable to adjust it to a range of 1.50 meq or less. When the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable adhesive composition is less than 0.85 meq, after the crosslinking reaction per 1 g of the above-mentioned active energy ray-curable adhesive composition. When the residual hydroxyl group concentration of the adhesive layer 2 is high, the adhesive strength of the adhesive layer 2 after UV irradiation, especially the adhesive strength A after UV irradiation under aerobic conditions, does not decrease sufficiently, and the semiconductor chip with the die bond film is removed from the adhesive layer in the pick-up process. There is a possibility that it will be difficult to peel off from 2.

On the other hand, if the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable adhesive composition exceeds 1.50 meq, the effect gradually saturates, which is preferable from an economical point of view. do not have. Furthermore, depending on the copolymerization composition of the acrylic adhesive polymer, it may easily gel during polymerization or reaction during synthesis, making synthesis difficult. Note that when confirming the carbon-carbon double bond content of the acrylic adhesive polymer, the carbon-carbon double bond content can be calculated by measuring the iodine value of the acrylic adhesive polymer.

As mentioned above, when the active energy ray-reactive carbon-carbon double bond concentration is within the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray-curable adhesive composition, the adhesive layer 2 By irradiating ultraviolet rays both under oxygen and non-oxygen conditions, it becomes easy to reduce the adhesive strength to the desired level, and in the pick-up process, the semiconductor chip with the die bond film is removed from the adhesive layer 2 in good condition. Easy to pick up. The active energy ray-reactive carbon-carbon double bond concentration is more preferably in the range of 0.88 meq or more and 1.46 meq or less per 1 g of the active energy ray-curable adhesive composition.

[Adhesive strength of adhesive layer]
The adhesive force A of the adhesive layer 2 of the dicing tape 10 at 23° C. to a stainless steel plate (SUS304/BA plate) after irradiation with ultraviolet rays under aerobic conditions is in the range of 3.50 N/25 mm or less. Here, the adhesive strength A after irradiation with ultraviolet light under aerobic conditions is, as described above, for the adhesive layer portion exposed to the air after the edge portion of the cut die bond film (adhesive layer) 3 is peeled off. This is the adhesive strength of the adhesive layer 2 after UV irradiation, taking into consideration that the adhesive strength reduction effect due to UV irradiation cannot be sufficiently obtained due to polymerization inhibition by oxygen in the surrounding air. The smaller the adhesive strength A after irradiation with ultraviolet rays in the presence of oxygen is, the better, but it is difficult to completely prevent polymerization inhibition due to oxygen, and while there is a limit to reducing the adhesive strength, semiconductor chips with die-bonding films In the series of steps to obtain the adhesive strength of the dicing tape 10 after irradiation with ultraviolet rays under aerobic conditions, properties other than the adhesive strength A to the die bond film (adhesive layer) 3 of the dicing tape 10 need to be taken into consideration. In the agent layer, the lower limit is preferably kept at 1.25 N/25 mm. In addition, if the adhesive force A after irradiation with ultraviolet rays under aerobic conditions exceeds 3.50 N/25 mm, in the pick-up process, after irradiating the adhesive layer 2 with ultraviolet rays, the dicing tape 10 is placed on the push-up jig. A semiconductor chip with a die-bond film that was peeled off from the adhesive layer 2 of the dicing tape 10 when a pickup collet was brought into contact with and landed on the surface of the semiconductor chip from above. If the edges of the die-bonding film are not sufficiently cured, the semiconductor chip with the die-bonding film may be stuck to the adhesive layer 2 even by pushing up the jig from the bottom side of the dicing tape 10 and suctioning and lifting it with a suction collet. The dicing tape 10 is strongly re-adhered to the extent that it cannot be easily peeled off, and even if the dicing tape 10 is pushed up using a pushing up jig from the bottom side, it is difficult to create a trigger for it to come off from the edge, making it difficult to pick up the semiconductor chip with the die bond film. may be inhibited. Furthermore, if you try to forcefully pick up the semiconductor chip by increasing the push-up height (the amount of push-up) of the push-up jig, the risk of damaging the semiconductor chip increases. The adhesive strength A after UV irradiation under oxygen is preferably in the range of 1.30 N/25 mm or more and 3.00 N/25 mm or less, more preferably in the range of 1.35 N/25 mm or more and 2.75 N/25 mm or less. .

If the adhesive force A after irradiation with ultraviolet rays under aerobic conditions is within the range of 3.50 N/25 mm or less, in the pick-up process, after irradiating the adhesive layer 2 with ultraviolet rays, the adhesive layer 2 is placed on the dicing tape 10 located on the push-up jig. The semiconductor chip with the die-bond film that had peeled off from the adhesive layer 2 of the dicing tape 10 when the suction collet for pickup was brought into contact and landed on the surface of the semiconductor chip from above. The phenomenon in which the edge portion of the die-bonding film is firmly re-adhered to the adhesive layer 2 which is insufficiently cured by ultraviolet irradiation is greatly suppressed. In other words, the semiconductor with the die-bonding film is The re-adhering force is weakened to a level where the chips can be easily peeled off from the adhesive layer 2, and when the dicing tape 10 is pushed up from the bottom side using a pushing up jig, it is easy to create a trigger for the chip to be detached from the edge portion. Pick-up of a semiconductor chip with a die-bonding film is not hindered. Furthermore, the risk of damage to the semiconductor chip during pickup is also reduced. As a result, in the pickup step, it becomes possible to favorably pick up the semiconductor chip with the die bond film from the adhesive layer 2 after irradiation with ultraviolet rays.

As described above, in the actual pick-up process, the edge portion of the die bond film of the semiconductor chip with die bond film that had been peeled off from the adhesive layer 2 of the dicing tape 10 was irradiated with ultraviolet rays while being exposed to the air. The reason why the re-adhering force is weaker than before when re-adhering to the adhesive layer 2 is presumed to be due to the following reason. That is, first, (1) the surface of the adhesive layer 2 whose adhesive force A after irradiation with ultraviolet light under oxygen conditions has been reduced to a level of 3.50 N/25 mm or less is cured to a desired level by irradiation with ultraviolet light; Appropriate hardness is provided. The adhesive layer 2 of this embodiment has a higher die-bonding property than the adhesive layer 2 before ultraviolet irradiation or the conventional adhesive layer after ultraviolet irradiation, which is insufficiently cured due to polymerization inhibition due to oxygen. The wettability and conformability to the film 3 are significantly suppressed. On the other hand, (2) when actually picking up a semiconductor chip with a die-bond film, the edge part of the die-bond film of the semiconductor chip with a die-bond film that has been peeled off from the adhesive layer 2 of the dicing tape 10 is attached to the semiconductor chip of the suction collet. The time from when the tape is re-adhered to the adhesive layer 2 after UV irradiation due to contact and landing until it is pushed up by a jig from the lower surface side of the dicing tape 10 is extremely short. Then, the peeled die bond film (adhesive Even if the surfaces of the edge portions of the dicing tape 10 come into contact again, the jig immediately starts pushing up the semiconductor chip with the die-bonding film from the bottom side of the dicing tape 10, before the two layers have fully blended together, and the jig starts pushing up the semiconductor chip with the die-bonding film from the bottom side of the dicing tape 10, leading to the pick-up. It will be transferred to In other words, when the two layers are reattached, it is possible to avoid maintaining the adhesive force between the two layers at a high value as in the conventional case.
Therefore, if the edge portion of the die-bond film of the semiconductor chip with die-bond film is moderately peeled off from the adhesive layer 2 due to the expanding process, the cut die-bond film (adhesive layer) and the pressure-sensitive adhesive layer do not peel off during the expansion process. It is thought that the force required to peel off the edge portion of the semiconductor chip with the die-bond film has become smaller.

The adhesive strength A after irradiation with ultraviolet light under oxygen conditions in the present invention is measured by the method described below. First, a dicing tape 10 and a stainless steel plate (SUS304/BA plate) are prepared separately. The dicing tape 10 is cut to a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated using a metal halide lamp from the second side of the adhesive layer of the dicing tape 10 from which the release liner has been peeled off (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) After that, the dicing tape 10 was applied to the stainless steel plate (SUS304/BA plate) from the edge of the two adhesive layers using a rubber roller weighing 2 kg in an environment of a temperature of 23°C and a humidity of 50% RH. A rubber roller is moved back and forth once at a speed of about 5 mm/sec to neatly press and bond the pieces together to form a test piece for measurement. After standing still for 20 minutes, the adhesive force of the test piece was measured using an adhesive/film peeling analyzer of a flexible peeling angle type shown in FIG. First, a test piece for measurement in which a dicing tape 10 is bonded to a stainless steel plate 4 is fixed and mounted on a flat plate cross stage 5 for an adhesive/film peeling analyzer using a special jig, and the end of the dicing tape 10 is It is fixed to a load cell 7 equipped with a gripping jig (not shown). Next, in an environment with a temperature of 23° C. and a humidity of 50% RH, as shown in FIG. While moving in the opposite direction (direction of arrow V1) to the load cell 7 at a stage speed V1 of 300 mm/min, the flat plate cross stage 5 is also moved on the rotating stage 8 at a peeling speed V2 of 300 mm/min synchronized with the stage speed V1 at a peeling angle of 90°. (direction of arrow V2). Thereby, the dicing tape 10 can be peeled off from the stainless steel plate 4 fixed and attached to the flat plate cross stage at a peeling speed of 300 mm/min while maintaining the peeling angle at 90°. The load cell 7 senses the load when the adhesive layer 2 and the base film 1 are peeled off from the stainless steel plate 4, and the adhesive strength is measured. By the above method, the adhesive strength (unit: N/25 mm) of the dicing tape 10 to the stainless steel plate (SUS304/BA plate) 4 at a peeling angle of 90° is measured. The measurement is performed on three test pieces, and the average value of the three test pieces is taken as the adhesive strength A of the dicing tape 10 after irradiation with ultraviolet light under aerobic conditions.

Further, the adhesive strength B of the adhesive layer 2 of the dicing tape 10 at 23° C. to a stainless steel plate (SUS304/BA plate) after irradiation with ultraviolet rays in an oxygen-free environment is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less. be. Here, the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment is defined as the adhesion strength B of the bonded surface between the adhesive layer 2 and the adherend (die bond film 3) (adhesive without peeling), without taking into account the effect of oxygen inhibition by surrounding oxygen. This is the adhesion force that represents the adhesion force after UV irradiation on From the viewpoint of improving the pick-up property, the adhesive force B after ultraviolet irradiation is preferably as small as possible within the above range, but if it is less than 0.25 N/25 mm, the semiconductor chip with the die-bonding film is used in the pre-pick-up stage. In this case, the dicing tape 10 may unintentionally fall off from its fixed position on the adhesive layer 2 or become misaligned. In addition, if the adhesive force B after irradiation with ultraviolet rays in an oxygen-free environment is larger than 0.70 N/25 mm, even if the dicing tape 10 is pushed up from the lower surface side using a pushing up jig in the pick-up process, the edges of the die-bonding film 3a Following peeling of the portion, peeling of the die bond film 3a from the adhesive layer 2 toward the center may be difficult to progress, and pickup itself may be difficult. Furthermore, if you try to forcefully pick up the semiconductor chip by increasing the push-up height (up-up amount) of the push-up jig, there is a risk that the semiconductor chip will be damaged. The adhesive force B after irradiation with ultraviolet rays in an oxygen-free environment is preferably in the range of 0.30 N/25 mm or more and 0.65 N/25 mm or less, more preferably in the range of 0.35 N/25 mm or more and 0.60 N/25 mm or less. .

If the adhesive force B after irradiation with ultraviolet rays in an oxygen-free environment is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less, the dicing tape 10 is pushed up using a pushing up jig from the lower surface side in the pick-up process. At this time, on the contact surface between the die bond film and the adhesive layer 2 of the semiconductor chip with the die bond film, peeling of the die bond film from the adhesive layer 2 tends to progress from the outer periphery of the contact surface toward the center. Pick-up properties are improved. Furthermore, the risk of damage to the semiconductor chip during pickup is also reduced.

In the present invention, the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment is measured by the method described below. First, a dicing tape 10 and a stainless steel plate (SUS304/BA plate) are prepared separately. The dicing tape 10 is cut to a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, a stainless steel plate (SUS304/BA plate) was heated at a temperature of 23° C. and a humidity of 50% RH using a rubber roller weighing 2 kg from the end of the adhesive layer 2 of the dicing tape 10 from which the release liner had been peeled off. The rubber roller is moved back and forth at a speed of approximately 5 mm/sec in an environment to neatly press and bond the materials together. After standing still for 20 minutes, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) and use it as a test piece for measurement. The test piece was diced onto a stainless steel plate (SUS304/BA plate) using the adhesive/film peeling analyzer of the flexible peeling angle type shown in Fig. 4 in the same way as the measurement of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions described above. The adhesive strength (unit: N/25 mm) of the tape 10 is measured at a peeling angle of 90°. The measurement is performed on three test pieces, and the average value of the three test pieces is taken as the adhesive strength B of the dicing tape 10 after irradiation with ultraviolet rays under anoxic conditions.

Determine the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under oxygen to the adhesive force B after irradiation with ultraviolet rays under oxidation to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions of the adhesive layer 2 of the dicing tape 10, and evaluate the influence of polymerization inhibition by oxygen on the adhesive layer. I can do it. It is expressed as

In the dicing tape 10 of the present embodiment, the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under oxygen conditions to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is not particularly limited as long as the effects of the present invention are not impaired. , preferably in the range of 3.00 or more and 5.00 or less. When the ratio A/B of the adhesive force A after irradiation with ultraviolet rays under oxidation to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions is within the above range, the adhesive layer 2 formed by the expanding process of the dicing tape 10 Regarding the part where the edge of the cut die bond film (adhesive layer) 3 has peeled off (floated), when it is irradiated with ultraviolet rays, the adhesive strength is sufficient due to polymerization inhibition due to oxygen contained in the surrounding air. This makes it easier to avoid maintaining the adhesive strength at a high value without decreasing the adhesive strength, that is, the re-adhesion strength can be increased to a level where it can be more easily peeled off by pushing up the jig from the bottom side of the dicing tape 10. It can be made weaker. As a result, when pushing up the dicing tape 10 from the bottom side using a push-up jig, it becomes easier to create a trigger for peeling from the edge part, and the force required to peel off the edge part of the semiconductor chip with the die bond film is reduced. Since it can be made smaller, it becomes possible to better pick up the semiconductor chip with the die bond film from the adhesive layer 2 after irradiation with ultraviolet rays.

[Thickness of adhesive layer]
The thickness of the adhesive layer 2 of this embodiment is not particularly limited, but is preferably in the range of 3 μm or more and 30 μm or less, more preferably 5 μm or more and 20 μm or less, and particularly preferably 8 μm or more and 15 μm or less. . When the thickness of the adhesive layer 2 is less than 3 μm, especially when the amount of polyisocyanate crosslinking agent added is large, the adhesive strength of the dicing tape 10 may be excessively reduced. In this case, the adhesion to the SUS ring frame may be insufficient, and the dicing tape 10 may peel off from the SUS ring frame during the cool expansion process, making it impossible to perform the normal expansion process. Moreover, when used as a dicing die bond film, poor adhesion between the adhesive layer 2 and the die bond film 3 may occur. On the other hand, when the thickness of the adhesive layer 2 exceeds 30 μm, especially when the amount of polyisocyanate crosslinking agent added is large, when the dicing tape 10 is cool-expanded, the die bond film 3 is excessively removed from the adhesive layer 2. If the adhesive layer 2 peels off, sufficient external stress cannot be applied to the die-bond film 3 through the adhesive layer 2, and the die-bond film 3 may not be cut cleanly, or the kerf width may not be secured sufficiently, or the kerf may peel off. The width may vary. In that case, there is a risk that pick-up failures of the semiconductor chip with the die-bonding film will increase. Moreover, from the viewpoint of economic efficiency, this is not very preferable in practice.

(Anchor coat layer)
In the dicing tape 10 according to the present embodiment, the base film 1 and the adhesive layer 2 are adjusted according to the manufacturing conditions of the dicing tape 10, the usage conditions of the dicing tape 10 after manufacturing, etc., within a range that does not impair the effects of the present invention. An anchor coat layer matching the composition of the base film 1 may be provided between the base film 1 and the base film 1. Providing the anchor coat layer improves the adhesion between the base film 1 and the adhesive layer 2.

(Release liner)
Further, a release liner may be provided on the opposite surface side (one surface side) of the adhesive layer 2 from the base film 1, if necessary. There are no particular restrictions on what can be used as the release liner, but examples include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, and papers. Further, the surface of the release liner may be subjected to a release treatment using a silicone release agent, a long chain alkyl release agent, a fluorine release agent, or the like in order to improve the releasability of the adhesive layer 2. The thickness of the release liner is not particularly limited, but one in the range of 10 μm or more and 200 μm or less can be suitably used.

(Method for manufacturing dicing tape)
FIG. 5 is a flowchart illustrating a method for manufacturing the dicing tape 10. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution for the adhesive layer 2 (adhesive layer forming coating solution), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparation step). The coating solution can be prepared, for example, by uniformly mixing and stirring the acrylic adhesive polymer, which is a constituent component of the adhesive layer 2, a crosslinking agent, and a diluent solvent. As the solvent, for example, general-purpose organic solvents such as toluene and ethyl acetate can be used.

Then, using the coating solution for the adhesive layer 2 prepared in step S102, the coating solution is applied onto the release-treated surface of the release liner and dried to form the adhesive layer 2 with a predetermined thickness (step S103: Adhesive layer forming step). The coating method is not particularly limited, and can be coated using, for example, a die coater, comma coater (registered trademark), gravure coater, roll coater, reverse coater, or the like. Further, the drying conditions are not particularly limited, but for example, it is preferable that the drying temperature be within the range of 80° C. or more and 150° C. or less, and the drying time be within the range of 0.5 minutes or more and 5 minutes or less. Subsequently, the base film 1 is prepared (step S104: base film preparation step). Then, the base film 1 is pasted onto the adhesive layer 2 formed on the release liner (step S105: base film pasting step). Finally, the formed adhesive layer 2 is aged for 72 hours in an environment of, for example, 40° C. to cause the acrylic adhesive polymer to react with the crosslinking agent, thereby crosslinking and curing it (step S106: thermosetting step). Through the above steps, it is possible to manufacture a dicing tape 10 having the adhesive layer 2 and the release liner on the base film 1 in this order from the base film side. Note that, in the present invention, a laminate including a release liner on the adhesive layer 2 may also be referred to as the dicing tape 10.

Note that as a method for forming the adhesive layer 2 on the base film 1, a coating solution for the adhesive layer 2 is applied onto the release liner and dried, and then the base film 2 is formed on the adhesive layer 2. Although the method of bonding the film 1 is illustrated, a method of directly applying a coating solution for the adhesive layer 2 onto the base film 1 and drying it may also be used. From the viewpoint of stable production, the former method is preferably used.

The dicing tape 10 of this embodiment may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

<Dicing die bond film>
The dicing tape 10 of the present embodiment is used in the semiconductor manufacturing process in the form of a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10. You can also use The die bond film (adhesive layer) 3 is for adhering and connecting the diced semiconductor chips to a lead frame or a wiring board (supporting board). Furthermore, when semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips. In this case, the first-stage semiconductor chip is bonded to the semiconductor chip mounting wiring board on which terminals are formed by a die-bonding film (adhesive layer) 3, and a further die-bonding film (adhesive layer) is placed on top of the first-stage semiconductor chip. ) 3, the second stage semiconductor chip is bonded. The connection terminals of the first-stage semiconductor chip and the second-stage semiconductor chip are electrically connected to external connection terminals via wires, but the wires for the first-stage semiconductor chip are die-bonded during crimping (die bonding). It is embedded in the film (adhesive layer) 3, that is, the wire-embedded die bond film (adhesive layer) 3 described above. An example of the die bond film (adhesive layer) 3 in the case where the dicing tape 10 of this embodiment is used as the dicing die bond film 20 will be shown below, but it is not particularly limited to this example.

(Die bond film)
The die-bonding film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. A preferred embodiment of the adhesive composition includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin. Examples of thermosetting adhesive compositions include a resin composition containing the following, to which a curing accelerator, an inorganic filler, a silane coupling agent, etc. are added. The die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesion between a semiconductor chip and a support substrate, and between a semiconductor chip and a semiconductor chip, and also has excellent adhesion properties for electrode embedding and/or wire embedding. It is preferable because it has the following characteristics: it can be bonded at a low temperature in the die bonding process, it can be cured in a short time, and it has excellent reliability after being molded with a sealant.

A general-purpose die-bond film used in a form in which the wire is not embedded in the adhesive layer and a wire-embedded die-bond film used in a form in which the wire is embedded in the adhesive layer are The types are often almost the same, but by changing the blending ratio of the materials used and the physical properties/characteristics of individual materials depending on the purpose, it can be used for general purpose die bonding film or for wire-embedded die bonding. Customized for film. Furthermore, if there is no problem with the reliability of the final semiconductor device, a wire-embedded die bond film may be used as a general-purpose die bond film. That is, the wire-embedded die-bonding film is not limited to wire-embedding applications, but can also be used for bonding semiconductor chips to substrates with unevenness caused by wiring, metal substrates such as lead frames, and the like.

(Adhesive composition for general purpose die bond film)
First, an example of an adhesive composition for a general-purpose die-bonding film will be described, but the invention is not particularly limited to this example. As an indicator of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a general-purpose die bond film, the shear viscosity at 80°C is generally used. indicates a value in the range of 20,000 Pa·s or more and 40,000 Pa·s or less, preferably 25,000 Pa·s or more and 35,000 Pa·s or less. A preferred embodiment of the adhesive composition for general-purpose die-bonding films includes the sum of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components of the adhesive composition. When the amount is based on 100 parts by mass, (a) the above glycidyl group-containing (meth)acrylic acid ester copolymer in a range of 52 parts by mass to 90 parts by mass, and the above epoxy resin in a range of 5 parts by mass to 25 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the phenol resin in the following range, in the range of 5 parts by mass or more and 23 parts by mass or less of the phenolic resin, adjusted so that the total amount of the resin component is 100 parts by mass; and (c) an inorganic filler in the range of 0.1 part by mass or more and 0.3 parts by mass or less based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy resin. and the above-mentioned phenol resin, in an amount of 5 parts by mass or more and 20 parts by mass or less, based on 100 parts by mass of the total amount of the above-mentioned phenol resin.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]
The glycidyl group-containing (meth)acrylic acid ester copolymer contains at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate as a copolymer unit. is preferred. From the viewpoint of ensuring appropriate adhesive strength, the above-mentioned glycidyl (meth)acrylate copolymer unit is 0.5% by mass or more and 6.0% by mass in the total amount of the glycidyl group-containing (meth)acrylic ester copolymer. It is preferably included in the following range, and more preferably in a range of 2.0% by mass or more and 4.0% by mass or less. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers such as styrene or acrylonitrile as a copolymer unit, if necessary, from the viewpoint of adjusting the glass transition temperature (Tg). You can stay there.

The glass transition temperature (Tg) of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50°C or higher and 30°C or lower, improving handleability as a die-bonding film (improving tackiness). From the viewpoint of (suppression), the temperature is more preferably in the range of -10°C or more and 30°C or less. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, ethyl (meth)acrylate and It is preferred to use/or butyl (meth)acrylate.

The weight average molecular weight Mw of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of 500,000 to 2,000,000, more preferably in the range of 700,000 to 1,000,000. When the weight average molecular weight Mw is within the above range, it is easy to obtain appropriate adhesive strength, heat resistance, and flowability. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth)acrylic ester copolymer in the die-bonding film (adhesive layer) 3 is the content of the glycidyl group-containing (meth)acrylic ester copolymer that is a resin component in the adhesive composition. When the total amount of the combined epoxy resin and phenol resin, which will be described later, is the standard 100 parts by mass, it is preferably in the range of 52 mass% or more and 90 mass% or less, and in the range of 60 mass% or more and 80 mass% or less. It is more preferable that there be.

[Epoxy resin]
Epoxy resins are not particularly limited, but include, for example, bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak epoxy resin, alkylphenol Novolak type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalene diol, diglycidyl etherified product of phenols, diglycidyl etherified product of alcohols, and Bifunctional epoxy resins such as alkyl substituted products, halides, and hydrogenated products of these, novolac type epoxy resins, and the like can be mentioned. Other commonly known epoxy resins such as polyfunctional epoxy resins and heterocycle-containing epoxy resins may also be used. These may be used alone or in combination of two or more.

The softening point of the epoxy resin is preferably in the range of 70° C. or higher and 130° C. or lower from the viewpoint of adhesive strength and heat resistance. Further, the epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described below.

The content ratio of the epoxy resin in the die-bonding film (adhesive layer) 3 is determined from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and the phenol resin described below is 100 parts by mass as a standard, the range is 5% by mass or more and 25% by mass or less. The content is preferably in the range of 10% by mass or more and 20% by mass or less.

[Phenol resin: hardening agent for epoxy resin]
Examples of curing agents for epoxy resins include, but are not limited to, phenol resins that can be obtained by reacting a phenol compound with a xylylene compound, which is a divalent linking group, without a catalyst or in the presence of an acid catalyst. . Examples of the phenolic resin include novolac type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenolic resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. These phenolic resins may be used alone or in combination of two or more. Among these phenolic resins, phenol novolak resins and phenol aralkyl resins tend to improve the connection reliability of the die bond film (adhesive layer) 3, and are therefore preferably used.

The softening point of the phenol resin is preferably in the range of 70° C. or higher and 90° C. or lower from the viewpoint of adhesive strength and heat resistance. Further, the hydroxyl equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the above thermosetting resin composition, the phenol resin is It is preferable to blend the hydroxyl group in an amount that is preferably in the range of 0.5 equivalent or more and 2.0 equivalent or less, more preferably 0.8 equivalent or more and 1.2 equivalent or less. It depends on the functional group equivalent of each resin, so it cannot be stated unconditionally, but for example, the content ratio of phenol resin is the same as that of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition. When the total amount of the epoxy resin and the phenol resin is a standard 100 parts by mass, it is preferably in the range of 5% by mass or more and 23% by mass or less.

[Curing accelerator]
Furthermore, a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition, if necessary. Specific examples of such curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimeryl. Examples include tate, and these may be used alone or in combination of two or more. The amount of the curing accelerator added is preferably in the range of 0.1 part by mass or more and 0.3 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin.

[Inorganic filler]
Furthermore, an inorganic filler can be added to the thermosetting resin composition as necessary from the viewpoint of controlling the fluidity of the die-bonding film (adhesive layer) 3 and improving the elastic modulus. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, and crystals. Examples include crystalline silica and amorphous silica, and these may be used alone or in combination of two or more. Among these, crystalline silica, amorphous silica, etc. are preferably used from the viewpoint of versatility. Specifically, for example, Aerosil (registered trademark: ultrafine particle dry silica) having a nano-sized average particle diameter is preferably used. The content ratio of the inorganic filler in the die-bonding film (adhesive layer) 3 is 100% based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenol resin, which are the resin components mentioned above. When expressed as parts by mass, it is preferably in the range of 5% by mass or more and 20% by mass or less.

[Silane coupling agent]
Furthermore, a silane coupling agent may be added to the thermosetting resin composition, if necessary, from the viewpoint of improving adhesive strength to an adherend. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. can also be used alone or in combination of two or more. The amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass or more and 7.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin.

[others]
Furthermore, a flame retardant, an ion trapping agent, etc. may be added to the thermosetting resin composition within a range that does not impair its function as a die-bonding film. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, hydrated antimony oxide, zirconium phosphate with a specific structure, magnesium silicate, aluminum silicate, triazole compounds, tetrazole compounds, and bipyridyl compounds. Can be mentioned.

(Adhesive composition for wire-embedded die bond film)
Next, an example of an adhesive composition for a wire-embedded die-bonding film will be described, but the invention is not particularly limited to this example. As an index of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a wire-embedded die bond film, generally The shear viscosity shows a value in the range of 200 Pa·s or more and 11,000 Pa·s or less, preferably 2,000 Pa·s or more and 7,000 Pa·s or less. A preferred embodiment of the adhesive composition for wire-embedded die-bonding films includes the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component of the adhesive composition, the epoxy resin, and the phenol resin. (a) The glycidyl group-containing (meth)acrylic acid ester copolymer is in the range of 17 parts by mass to 51 parts by mass, and the epoxy resin is in the range of 30 parts by mass to 64 parts by mass, based on the total amount of 100 parts by mass. (b) contains the above phenol resin in a range of 19 parts by mass or more and 53 parts by mass or less, adjusted so that the total amount of the resin component is 100 parts by mass, and (b) contains a curing accelerator in the above epoxy resin and the above The above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer and the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer contain an inorganic filler in an amount of 0.01 part by mass or more and 0.07 parts by mass or less based on 100 parts by mass of the total amount with the phenol resin. An example of an adhesive composition may include an amount of 10 parts by mass or more and 80 parts by mass or less based on 100 parts by mass of the total amount of the epoxy resin and the phenol resin.

[Glycidyl group-containing (meth)acrylic acid ester copolymer]
The glycidyl group-containing (meth)acrylic acid ester copolymer contains at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate as a copolymer unit. is preferred. In the case of wire-embedded die bonding films, it is necessary to improve fluidity during die bonding and ensure adhesive strength after curing. A group-containing (meth)acrylic ester copolymer (A) and a glycidyl group-containing (meth)acrylic ester copolymer (B) having a low copolymer unit ratio of glycidyl (meth)acrylate and a high molecular weight. A combination of these is preferred, and it is preferred that a certain amount or more of the former component (A) is included in the combination.

Specifically, the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for a wire-embedded die-bonding film is prepared by adding a glycidyl group-containing copolymer unit of glycidyl (meth)acrylate to a copolymer unit containing a glycidyl group. It is contained in the total amount of (meth)acrylic acid ester copolymer in the range of 5.0% by mass or more and 15.0% by mass or less, the glass transition temperature (Tg) is in the range of -50°C or more and 30°C or less, and the weight A glycidyl group-containing (meth)acrylic acid ester copolymer (A) having an average molecular weight Mw in the range of 100,000 to 400,000, and a glycidyl group-containing (meth)acrylate copolymer unit It is contained in the total amount of meth)acrylic acid ester copolymer in the range of 1.0% by mass or more and 7.0% by mass or less, the glass transition temperature (Tg) is in the range of -50°C or more and 30°C or less, and the weight average It is preferable to use a mixture with a glycidyl group-containing (meth)acrylic acid ester copolymer (B) having a molecular weight Mw of 500,000 to 900,000. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography.

The content of the glycidyl group-containing (meth)acrylic ester copolymer (A) is 60% by mass in the total amount of the glycidyl group-containing (meth)acrylic ester copolymer (total of (A) and (B)). The content is preferably in the range of 90% by mass or less. In addition, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers such as styrene or acrylonitrile as a copolymer unit, if necessary, from the viewpoint of adjusting the glass transition temperature (Tg). You can stay there.

The glass transition temperature (Tg) of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer as a whole is preferably in the range of -50°C or higher and 30°C or lower, which improves handleability as a die-bonding film (tackiness). From the viewpoint of (suppression of), the temperature is more preferably in the range of -10°C or more and 30°C or less. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, as the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms, ethyl (meth)acrylate is used. It is preferred to use and/or butyl (meth)acrylate.

The content ratio of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)) in the wire-embedded die bonding film (adhesive layer) 3 is determined by the fluidity and From the viewpoint of adhesive strength after curing, 100 parts by mass based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition, and the epoxy resin and phenol resin described below. In this case, it is preferably in the range of 17% by mass or more and 51% by mass or less, and more preferably in the range of 20% by mass or more and 45% by mass or less.

[Epoxy resin]
The epoxy resin is not particularly limited, but the same ones as exemplified as the epoxy resin for the above-mentioned general-purpose die bond film adhesive composition can be used. These may be used alone or in combination of two or more types, but in the case of a wire-embedded die bond film, it is possible to ensure adhesive strength, suppress the generation of voids on the bonding surface, and improve the bonding properties of the wire. Since it is necessary to provide good embeddability, it is preferable to use two or more types of epoxy resins in combination in order to control the fluidity and elastic modulus.

Preferred embodiments of the epoxy resin used for the wire-embedded die bond film (adhesive layer) 3 include an epoxy resin (C) that is liquid at room temperature and an epoxy resin (D) that has a softening point of 98°C or lower, preferably 85°C or lower. ). The content of the above-mentioned epoxy resin (C) which is liquid at room temperature is preferably in the range of 15% by mass or more and 75% by mass or less based on the total amount of epoxy resin (total of (C) and (D)), and 30% by mass or less. More preferably, the content is in the range of 50% by mass or more. The epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described below.

The content ratio of the epoxy resin in the die-bonding film (adhesive layer) 3 is determined from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3. When the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer as a resin component, the epoxy resin, and the phenol resin described below is the standard 100 parts by mass, the range is 30% by mass or more and 64% by mass or less. It is preferable that it is, and it is more preferable that it is the range of 35 mass % or more and 50 mass % or less.

[Phenol resin: hardening agent for epoxy resin]
The curing agent for the epoxy resin is not particularly limited, but the same curing agent as exemplified as the phenol resin for the above-mentioned general-purpose die bond film adhesive composition can be used in the same manner. The softening point of the phenol resin is preferably in the range of 70° C. or higher and 115° C. or lower from the viewpoint of adhesive strength and fluidity. Further, the hydroxyl equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the above thermosetting resin composition, the phenol resin is The hydroxyl group is preferably blended in an amount of 0.5 equivalent or more and 2.0 equivalent or less, more preferably 0.6 equivalent or more and 1.0 equivalent or less from the viewpoint of achieving both fluidity during die bonding. is preferable. It depends on the functional group equivalent of each resin, so it cannot be stated unconditionally, but for example, the content ratio of phenol resin is the same as that of the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition. When the total amount of the epoxy resin and the phenol resin is a standard 100 parts by mass, it is preferably in the range of 19% by mass or more and 53% by mass or less.

[Curing accelerator]
Furthermore, a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition, if necessary. As such a curing accelerator, the same one as exemplified as the curing accelerator for the above-mentioned general-purpose die bond film adhesive composition can be used. The amount of the curing accelerator added is 0.01 parts by mass or more and 0.07 parts by mass or less , based on the total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. Preferably, the range is within the range.

[Inorganic filler]
Furthermore, the thermosetting resin composition may be used from the viewpoints of improving the handling properties of the die bonding film (adhesive layer) 3, adjusting fluidity during die bonding, imparting thixotropic properties, and improving adhesive strength. , an inorganic filler can be added if necessary. As the inorganic filler, the same ones as those exemplified as the inorganic filler for the general-purpose die bond film adhesive composition mentioned above can be used in the same way, but among these, from the viewpoint of versatility, silica filler is preferable. Suitably used. The content ratio of the inorganic filler in the die bonding film (adhesive layer) 3 is determined from the viewpoint of fluidity during die bonding, breakability during cool expansion, and adhesive strength. When the total amount of the acrylic ester copolymer, epoxy resin, and phenol resin is the standard 100 parts by mass, the range is preferably 10% by mass or more and 80% by mass or less, and 15% by mass or more and 50% by mass or less. The range is more preferable.

The above inorganic filler is a mixture of two or more types of inorganic fillers with different average particle diameters in order to improve the breakability of the die bond film (adhesive layer) 3 during cool expansion and to sufficiently develop adhesive strength after curing. It is preferable to do so. Specifically, it is preferable to use an inorganic filler having an average particle diameter in the range of 0.1 μm or more and 5 μm or less as the main inorganic filler component accounting for 80% by mass or more based on the total mass of the inorganic filler. If it is necessary to suppress foaming of the die bond film 3 during the semiconductor chip manufacturing process due to excessively high fluidity of the die bond film (adhesive layer) 3 or to improve adhesive strength after curing, the average particle size may be An inorganic filler having a diameter of less than 0.1 μm may be used in combination with the above-mentioned main inorganic filler component in an amount of 20% by mass based on the total mass of the inorganic filler.

[Silane coupling agent]
Furthermore, a silane coupling agent may be added to the thermosetting resin composition, if necessary, from the viewpoint of improving adhesive strength to an adherend. As the silane coupling agent, the same one as exemplified as the silane coupling agent for the above-mentioned general-purpose die bond film adhesive composition can be used. The amount of the silane coupling agent added is 0.5 parts by mass or more and 2.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. It is preferable that it is in the range of .

[others]
Furthermore, a flame retardant, an ion trapping agent, etc. may be added to the thermosetting resin composition within a range that does not impair the function of the die-bonding film 3. As these flame retardants and ion trapping agents, the same ones as those exemplified as the flame retardants and ion trapping agents for the above-mentioned general-purpose die-bonding film adhesive composition can be used.

(Thickness of die bond film (adhesive layer))
The thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but is in order to ensure adhesive strength, to properly embed wires for connecting semiconductor chips, or to sufficiently fill irregularities such as wiring circuits on the board. , preferably in the range of 5 μm or more and 200 μm or less. If the thickness of the die-bonding film (adhesive layer) 3 is less than 5 μm, the adhesive force between the semiconductor chip and the lead frame, wiring board, etc. may be insufficient. On the other hand, if the thickness of the die-bonding film (adhesive layer) 3 is larger than 200 μm, it will not be economical, and it will likely be insufficient to cope with the miniaturization and thinning of semiconductor devices. In addition, in terms of high adhesiveness and the ability to reduce the thickness of the semiconductor device, the thickness of the film adhesive is more preferably in the range of 10 μm or more and 100 μm or less, particularly preferably in the range of 20 μm or more and 75 μm or less.

More specifically, the thickness when used as a general-purpose die bond film (adhesive layer) is preferably in the range of 5 μm or more and less than 30 μm, particularly preferably in the range of 10 μm or more and 25 μm or less. When used as an agent layer, the thickness is, for example, preferably in the range of 30 μm or more and 100 μm or less, particularly preferably in the range of 40 μm or more and 80 μm or less.

(Method for manufacturing die bond film)
The die-bonding film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare the release liner. Note that the same release liner as the release liner disposed on the adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die bond film (adhesive layer) 3, which is a forming material of the die bond film (adhesive layer) 3, is prepared. The coating solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, and a curing accelerator, which are the constituent components of the die-bonding film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing a silane coupling agent, silane coupling, etc., and a diluting solvent. As the solvent, for example, general-purpose organic solvents such as methyl ethyl ketone and cyclohexanone can be used.

Next, a coating solution for the die bond film (adhesive layer) 3 is applied onto the release-treated surface of the release liner serving as a temporary support, dried, and a predetermined thickness of the die bond film (adhesive layer) is applied. ) form 3. Thereafter, the release-treated surface of another release liner is bonded onto the die-bonding film (adhesive layer) 3. The coating method is not particularly limited, and can be coated using, for example, a die coater, comma coater (registered trademark), gravure coater, roll coater, reverse coater, or the like. As for the drying conditions, for example, it is preferable that the drying temperature is in the range of 60° C. or more and 200° C. or less, and the drying time is in the range of 1 minute or more and 90 minutes or less. In the present invention, a laminate in which a release liner is provided on both sides or one side of the die bond film (adhesive layer) 3 may also be referred to as the die bond film (adhesive layer) 3.

(Method for manufacturing dicing die bond film)
The method for manufacturing the dicing die-bonding film 20 is not particularly limited, but it can be manufactured by a conventionally known method. For example, the dicing die bond film 20 is prepared by first preparing the dicing tape 10 and die bond film 3 separately, and then peeling off the release liner of the adhesive layer 2 of the dicing tape 10 and the release liner of the die bond film (adhesive layer) 3. Then, the adhesive layer 2 of the dicing tape 10 and the die-bonding film (adhesive layer) 3 may be bonded together by pressing, for example, with a pressure roll such as a hot roll laminator. The bonding temperature is not particularly limited, and is preferably in the range of 10°C or more and 100°C or less, and the bonding pressure (linear pressure) is, for example, in the range of 0.1 kgf/cm or more and 100 kgf/cm or less. It is preferable that there be. In the present invention, the dicing die bond film 20 may also be referred to as a laminate in which a release liner is provided on the adhesive layer 2 and the die bond film (adhesive layer) 3. In the dicing die bond film 20, the release liner provided on the adhesive layer 2 and the die bond film (adhesive layer) 3 may be peeled off when the dicing die bond film 20 is used for a work.

The dicing die-bonding film 20 may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

For example, as disclosed in Japanese Unexamined Patent Application Publication No. 2011-159929, an adhesive layer (die bond film 3) pre-cut into the shape of a wafer constituting a semiconductor element on a release base material (release liner) and an adhesive film (dicing It is also possible to manufacture a large number of tapes 10) in the form of film rolls formed into island shapes. In this case, the dicing tape 10 is formed into a circle with a larger diameter than the die bond film (adhesive layer) 3, and the die bond film (adhesive layer) 3 is formed into a circle with a larger diameter than the semiconductor wafer 30. . When pre-cutting is performed in such a film roll form, the dicing tape 10 is locally heated and/or cooled in order to peel off and remove the excess dicing tape 10 continuously and well without cutting. may be done. Here, the heating temperature is selected as appropriate, but is preferably in the range of 30° C. or higher and 120° C. or lower. The heating time is selected as appropriate, but is preferably in the range of 0.1 seconds or more and 10 seconds or less. Since the dicing tape 10 of the present invention has a certain heat resistance, even if it is subjected to heat treatment at a high temperature of 120° C., there will be no particular problem in its handling.

<Method for manufacturing semiconductor chips>
FIG. 6 illustrates a method for manufacturing a semiconductor chip with a die bond film using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. It is a flowchart. Further, in FIG. 7, a ring frame (wafer ring) 40 is placed on the outer edge of the dicing tape 10 (exposed part of the adhesive layer 2) of the dicing die bond film 20, and individual pieces are placed on the die bond film (adhesive layer) 3 in the center. FIG. 2 is a schematic diagram showing a state in which a semiconductor wafer (a plurality of semiconductor chips) is attached. Furthermore, FIGS. 8A to 8F show the grinding process of a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation, and the dicing die bond film of a plurality of cut semiconductor wafers (a plurality of semiconductor chips). 20 is a cross-sectional view showing an example of a bonding process to 20. FIG. 9(a) to (f) show the process from expanding to picking up to obtain individual semiconductor chips with die bond fill from a plurality of cut thin film semiconductor wafers bonded and held on the dicing die bond film 20. FIG. 2 is a cross-sectional view showing an example of a manufacturing method including a series of steps.

(Method for manufacturing semiconductor chips using dicing die bond film 20)
The method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and may be any conventionally known method. Here, a manufacturing method using SDBG (Stealth Dicing Before Griding) will be exemplified and explained. do.

First, as shown in FIG. 8A, a semiconductor wafer W having a plurality of integrated circuits (not shown) mounted on a first surface Wa of a semiconductor wafer W whose main component is silicon, for example, is prepared (FIG. 6A). step S201: preparation step). Then, a wafer processing tape (backgrind tape) T having an adhesive surface Ta is bonded to the first surface Wa side of the semiconductor wafer W.

Next, as shown in FIG. 8(b), while the semiconductor wafer W is held on the wafer processing tape T, the laser beam, which is focused inside the wafer, is directed to the side opposite to the wafer processing tape T. In other words, the semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer along the lattice-shaped dicing line X, and a modified region 30b is formed in the semiconductor wafer W due to ablation caused by multiphoton absorption. is formed (step S202 in FIG. 6: modified region forming step). The modified region 30b is a weakened region for cutting and separating the semiconductor wafer W into semiconductor chips by a grinding process. A method of forming the modified region 30b along the planned dicing line by irradiating a laser beam on a semiconductor wafer W is described in, for example, Japanese Patent No. 3408805, Japanese Patent Application Publication No. 2002-192370, Japanese Patent Application Publication No. 2003-338567, etc. Reference may be made to the disclosed method.

Next, as shown in FIG. 8(c), with the semiconductor wafer W held on the wafer processing tape T, the semiconductor wafer W is ground from the second surface Wb until it reaches a predetermined thickness. The film is made thinner. Here, the thickness of the semiconductor wafer 30 to be thinned is preferably adjusted to 100 μm, more preferably 10 μm or more and 50 μm or less, from the viewpoint of making the semiconductor device thinner. In the main grinding/thinning process, when the thinned semiconductor wafer 30 is subjected to the grinding load of the grinding wheel, cracks occur in the vertical direction starting from the modified region 30b formed in FIG. 8 (b). The semiconductor chips 30a are grown and cut into a plurality of semiconductor chips 30a on a wafer processing tape T along a cutting line 30c corresponding to the planned dicing line X.

Next, as shown in FIGS. 8(d) and 8(e), the plurality of semiconductor chips 30a held on the wafer processing tape T are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (see FIG. 6 step S204: bonding process). In this step, after peeling off the release liner from the adhesive layer 2 and die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circular shape, the dicing tape 10 of the dicing die bond film 20 is removed as shown in FIG. A ring frame (wafer ring) 40 is attached to the outer edge (exposed part of the adhesive layer 2), and a die bond film (adhesive layer) 3 is laminated on the upper center of the adhesive layer 2 of the dicing tape 10. A plurality of semiconductor chips 30a held by a wafer processing tape T are attached to the wafer processing tape T. Thereafter, as shown in FIG. 8(f), the wafer processing tape T is peeled off from the plurality of thin film semiconductor chips 30a. The pasting is performed while being pressed by a pressing means such as a pressure roll. The bonding temperature is not particularly limited, and is preferably in the range of 20°C or more and 130°C or less, and from the viewpoint of reducing warpage of the semiconductor chip 30a, it is preferably in the range of 40°C or more and 100°C or less. More preferred. The pasting pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. Since the dicing tape 10 of the present invention has a certain level of heat resistance, even if the application temperature is high, there is no particular problem in its handling.

Subsequently, after the ring frame 40 is pasted on the adhesive layer 2 of the dicing tape 10 in the dicing die bond film 20, as shown in FIG. 9(a), the dicing die bond film 20 with the plurality of semiconductor chips 30a is is fixed to the holder 41 of the expanding device. As shown in FIG. 9(b), the thin film semiconductor wafer 30 (semiconductor chips 30a) cut along the cutting line 30c is cut on the lower surface of the thin film semiconductor wafer 30 (semiconductor chips 30a) so that it can be separated into pieces as a plurality of semiconductor chips 30a with die-bonding films. A die bond film 3 that will be cut along the dicing line X in the next step is attached to the side.

Next, a first expanding process under relatively low temperature conditions (for example, -30°C to 0°C), that is, a cool expanding process, is performed as shown in FIG. 9(c), and the dicing die bond film 20 The die bond film (adhesive layer) 3 is cut into small pieces of the die bond film (adhesive layer) 3a corresponding to the size of the semiconductor chip 30a, and the semiconductor chip 30a with the die bond film 3a is obtained (step S205 in FIG. 6). : cool expansion process). In this step, a hollow cylindrical push-up member (not shown) provided in the expanding device is raised by contacting the dicing tape 10 on the lower side of the dicing die bond film 20, and the semiconductor wafer 30 (semiconductor The dicing tape 10 of the dicing die-bonding film 20 to which the chips 30a) are bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30. Internal stress generated by pulling the dicing tape 10 in all directions due to cool expansion is transmitted as external stress to the die bond film 3 attached to the diced semiconductor wafer 30 (semiconductor chips 30a). Due to this external stress, the die bond film 3 which has become brittle at low temperature is cut into small pieces of the die bond film 3a having the same size as the semiconductor chip 30a, thereby obtaining the semiconductor chip 30a with the die bond film 3a.

The temperature conditions in the above cool expansion step are, for example, -30°C or more and 0°C or less, preferably -20°C or more and -5°C or less, and more preferably -15°C or more and -5°C or less. The temperature is particularly preferably -15°C. The expansion speed (the speed at which the hollow cylindrical push-up member rises) in the cool expansion step is preferably in the range of 0.1 mm/sec to 1000 mm/sec, more preferably 10 mm/sec to 300 mm/sec. range. Further, the amount of expansion (the height of the hollow cylindrical push-up member) in the cool expansion step is preferably in the range of 3 mm or more and 16 mm or less.

Here, in the dicing tape 10 of the present invention, first, the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 is adjusted to an appropriate range of 165 MPa or more and 260 MPa or less. Therefore, the internal stress generated by cool expansion in all directions of the dicing tape 10 is absorbed by the die bond film that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition. 3 as external stress, and as a result, the die bond film 3 is cut cleanly and with a high yield. Further, in the dicing tape 10 of the present invention, the adhesive layer 2 is composed of an adhesive composition mainly composed of an acrylic adhesive polymer having a specific hydroxyl value and a specific amount of a polyisocyanate crosslinking agent, and The equivalent ratio (-NCO)/(-OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent and the hydroxyl value (-OH) of the acrylic adhesive polymer is controlled to 0.14 or more and 1.32 or less. Therefore, the adhesive layer 2 after the crosslinking reaction has a hardness that can transmit an appropriate impact to the interface between the edge part of the die bond film and the adhesive layer 2 immediately below it at the moment the die bond film 3 is cut. , and a cohesive force capable of transmitting stress in a direction away from the die-bonding film 3, and a suitable initial adhesion force to the die-bonding film 3 is also imparted. As a result, in the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a that has been cut by cool expansion, the edge portion (four peripheral portions) of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is moderately separated from the adhesive layer 2 of the dicing tape 10. This facilitates peeling, and a state in which the dicing tape 10 is partially peeled off from the adhesive layer 2 is properly formed. In addition, in this case, the stress applied to the die bond film 3 and the adhesive layer 2 and the initial adhesion force to the die bond film 3 are moderately suppressed, so the cut die bond film peels off excessively from the adhesive layer 2. Without this, a sufficient kerf width can be ensured, and damage caused by collision between semiconductor chips and displacement from the fixed position on the adhesive layer 2 can be avoided.

In FIG. 9(c), for convenience, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is shown in such a way that it is in close contact with the adhesive layer 2 of the dicing tape 10. Although shown in the figure, in reality, as shown in the enlarged cross-sectional view of FIG. The central portion of the die bonding film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10.

After the cool-expanding process, the hollow cylindrical push-up member of the expanding device is lowered, and the expanded state of the dicing tape 10 is released.

Next, a second expanding process under conditions of relatively high temperature (for example, 10°C to 30°C), that is, a room temperature expanding process, is performed as shown in FIG. 9(d), and the die bond film (adhesive The distance (kerf width) between semiconductor chips 30a with layer 3a is increased. In this step, a cylindrical table (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 20 and raised, and the dicing tape 10 of the dicing die-bonding film 20 is expanded (see FIG. 6 step S206: room temperature expansion step). By ensuring a sufficient distance (kerf width) between the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a through the room temperature expansion process, the recognition of the semiconductor chips 30a by a CCD camera, etc. is improved, and the distance between the semiconductor chips 30a with the die bond film (adhesive layer) 3a is increased. It is possible to prevent the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a from being re-adhered to each other due to contact between the semiconductor chips 30a. As a result, the pick-up performance of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved in the pick-up process described later.

In addition, in FIG. 9(d), for convenience, the edge portion of the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a is in close contact with the adhesive layer 2 of the dicing tape 10. Although shown in the figure, in reality, as shown in the enlarged cross-sectional view of FIG. The central portion of the die bonding film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10. During normal temperature expansion, the adhesive strength of the part where the die bond film 3a (adhesive layer) and the adhesive layer 2 are in close contact is higher due to the higher environmental temperature than during cool expansion, and the adhesive strength of the dicing tape 10 is higher. It is possible to perform expansion while suppressing generated tensile stress. Therefore, although peeling may progress slightly from the peeled state of the die bond film 3a after cool expansion as shown in FIG. 9(c) due to the room temperature expansion step, peeling does not progress excessively.

The temperature conditions in the normal temperature expansion step are, for example, 10°C or higher, preferably 15°C or higher and 30°C or lower. The expansion speed (speed at which the cylindrical table rises) in the room temperature expansion step is, for example, in the range of 0.1 mm/sec to 50 mm/sec, preferably in the range of 0.3 mm/sec to 30 mm/sec. . Further, the amount of expansion in the room temperature expansion step is, for example, in the range of 3 mm or more and 20 mm or less.

After the dicing tape 10 is expanded at room temperature by raising the table, the table vacuum-chucks the dicing tape 10. Then, the table is lowered together with the workpiece while the suction by the table is maintained, and the expanded state of the dicing tape 10 is released. In order to suppress the narrowing of the kerf width of the semiconductor chip 30a with the die bond film (adhesive layer) 3a on the dicing tape 10 after the expanded state is released, it is necessary to It is preferable to heat shrink the circumferential portion outside the semiconductor chip 30a holding area by blowing hot air to eliminate slack in the dicing tape 10 caused by expansion, thereby maintaining the dicing tape 10 in a tensioned state. After the heat shrinkage, the vacuum suction state by the table is released. The temperature of the hot air may be adjusted depending on the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape 10, the air volume, etc., but is preferably in the range of 200° C. or more and 250° C. or less, for example. Further, the distance between the hot air outlet and the dicing tape 10 is preferably in a range of, for example, 15 mm or more and 25 mm or less. Further, the air volume is preferably in a range of, for example, 35 L/min or more and 45 L/min or less. Note that when performing the heat shrink process, the stage of the expanding device is rotated at a rotational speed in the range of, for example, 3°/second to 10°/second, and the circumference of the dicing tape 10 outside the semiconductor chip 30a holding area is rotated. Blow hot air along the section.

The dicing tape 10 of the present invention is made of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA) as its base film 1. Since the resin film is suitably used, the thermoplastic cross-linked resin (IO) made of an ionomer cross-linked with metal ions has a sufficiently large restoring force during heating against distortion after expansion. It has high shrinkage. Therefore, in the heat shrink process, when high-temperature hot air is blown onto the slack portion (circumferential portion) of the dicing tape 10 caused by expansion, the circumferential portion of the dicing tape 10 is heat-shrinked without any problem and the slack is eliminated. Therefore, the kerf width expanded by normal temperature expansion can be maintained by the tension of the dicing tape 10.

FIG. 11 shows a state in which the edge portion of the small die bond film 3a is partially peeled off from the adhesive layer 2 of the dicing tape 10 after the above-mentioned cool expansion process to shrink process. FIG. The area of the edge portion of the small piece of die-bonding film 3a peeled from the adhesive layer 2 is not particularly limited as long as it does not impair the effects of the present invention. In state 9 (corresponding to part 9 in FIG. 10) of one small piece of die-bonding film 3a held on the adhesive layer 2 observed from the adhesive layer 2 (film side), the small piece of die-bonding film 3a peeled off from the adhesive layer 2. A small piece of die-bond film that has been peeled off from the adhesive layer 2, where the area of the edge portion (hatched area) is S1 and the area of the part (white part) of the small piece of die-bond film 3a that is in close contact with the adhesive layer 2 is S2. It is preferable that the ratio of the area S1 of the edge portion of the die bond film 3a is in the range of 10% or more and 45% or less with respect to the area (=S1+S2) of the entire small die bond film 3a. More preferably, it is in the range of 15% or more and 40% or less.

When the ratio of the area S1 is less than 10%, in the total force required to peel the semiconductor chip 30a with the die-bonding film 3a from the adhesive layer 2, the effect of reducing the adhesive force A after irradiation with ultraviolet rays under oxygen conditions, that is, There is a possibility that the effect of reducing the force required for peeling off the edge portion of the semiconductor chip 30a with the die bond film 3a may not be sufficiently reflected. As a result, when the dicing tape 10 is pushed up using a push-up jig from the lower surface side during pick-up, which will be described later, it is difficult to create a trigger for peeling from the edge portion. There is a possibility that the effect of improving the pick-up property is hardly recognized or the effect is only slight.

When the ratio of the area S1 exceeds 45%, that is, when the die bond film 3 is excessively peeled off from the adhesive layer 2 during the cool expansion process, sufficient external stress is applied to the die bond film 3 through the adhesive layer 2. There is a risk that the die-bonding film 3 may not be cut cleanly, that a sufficient kerf width may not be secured, or that the kerf width may vary. In addition, there is a risk that the semiconductor chip 30a with the die bond film 3a will be unintentionally displaced or detached in the subsequent manufacturing process. Furthermore, in the pick-up process described below, when the excessively peeled die-bonding film is re-adhered to the adhesive layer 2, the re-adhesion area becomes excessively large, so that the adhesive layer 2 has an active energy that satisfies the requirements of the present invention. Even if the adhesive composition is made of a line-curable adhesive composition, there is a risk that a large amount of energy will be required in order to peel it off by pushing up the dicing tape 10 from the lower surface side with a jig due to the large re-adhesion area. be. As a result, the pickup yield of the semiconductor chip 30a with the die bond film 3a is reduced.

In other words, the above-mentioned area S1 means that the edge portion of the die-bonding film 3a peeled off by expansion and the adhesive layer 2 exposed to the air and irradiated with ultraviolet rays under an aerobic condition are dicing in the next pick-up process. This is the area where the tape 10 is instantaneously re-fixed by the contact and landing of the suction collet before it is pushed up using a pushing up jig from the lower surface side of the tape 10. Therefore, when the ratio of the area S1 is in the range of 10% to 40%, die bond This facilitates the most effective reduction of the force required to peel off the edge portion of the semiconductor chip 30a with the film 3a attached. On the other hand, in the area S2 of the die-bonding film 3a that is in close contact with the adhesive layer 2 of the die-bonding film 3a where the ratio of the small pieces to the entire area of the die-bonding film 3a is in the range of 55% to 90%, the area of the adhesive layer 2 is Since the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment is adjusted to 0.25 N/25 mm or more and 0.70 N/25 mm or less, the adhesive layer 2 is applied to the center of the die-bonding film 3a following peeling of the edge portion. Peeling of the die-bonding film 3a from the surface is likely to progress. In the next pick-up process, the total energy required to peel the semiconductor chip 30a with the die-bonding film 3a from the adhesive layer 2 is the sum of the peeling force reduction effects in the area S1 and the area S2 described above. Therefore, in the dicing tape 10 of this embodiment, the total energy can be easily reduced compared to the conventional one in the balance between the ratio of the area S1 and the area S2.

The method for determining the ratio of the area S1 and the area S2 is not particularly limited, and can be determined by a conventionally known method. For example, an image obtained by microscopically observing the edge portion of the cut small piece die-bonding film 3a partially peeled off from the adhesive layer 2 of the dicing tape 10 from the back side of the semiconductor chip (base film side), You can use image processing software or the like to binarize the area corresponding to the area S1 and the area S2 and calculate the ratio of each area, or you can print the image on paper etc. and separate each area. Examples include a method of cutting out along the shape, measuring the mass, and calculating the area ratio of each part from the mass ratio.

Next, by irradiating the dicing tape 10 with active energy rays from the base film 1 side, the adhesive layer 2 is cured and shrunk, and the adhesive force of the adhesive layer 2 to the die bond film 3a is reduced ( Step S207 in FIG. 6: active energy ray irradiation step). Here, the active energy rays used for the above-mentioned post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β rays, γ rays, and the like. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferred, and ultraviolet rays (UV) are particularly preferably used. The light source for irradiating the ultraviolet rays (UV) is not particularly limited, but includes, for example, a black light, an ultraviolet fluorescent lamp, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a carbon arc lamp, a metal halide lamp, and a xenon lamp. A lamp etc. can be used. Furthermore, ArF excimer laser, KrF excimer laser, excimer lamp, synchrotron radiation, etc. can also be used. The amount of ultraviolet (UV) irradiation is not particularly limited, and is preferably in the range of 100 mJ/cm ² or more and 2,000 J/cm ² or less, and preferably in the range of 150 mJ/cm ² or more and 1,000 J/cm ² or less. It is more preferable that

Here, as described above, the dicing tape 10 of the present invention contains an active energy ray-curable adhesive composition containing an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond. When the adhesive layer 2 is irradiated with ultraviolet rays such that the cumulative amount of light is 150 mJ/cm ² under oxygen and anoxia, Adhesion strength after UV irradiation in the absence of oxygen to stainless steel plate (SUS304/BA plate) at 23°C in a range where adhesive strength A (peel angle: 90°, peeling speed: 300 mm/min) is 3.50 N/25 mm or less after UV irradiation The curing state of the adhesive layer 2 due to the crosslinking reaction is adjusted so that B (peel angle: 90°, peel speed: 300 mm/min) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less. Therefore, the force required to peel off the semiconductor chip 30a with the die-bonding film 3a from the adhesive layer 2 can be made smaller than in the past. As a result, in the pick-up process described later, the pick-up performance of the semiconductor chip 30a with the die-bonding film 3a is improved. In this case, the active energy ray-reactive carbon-carbon double bond concentration is preferably adjusted to a value within the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray-curable adhesive composition. It is.

Subsequently, a so-called pick-up process is performed in which each of the diced semiconductor chips 30a with die-bonding film (adhesive layer) 3a is peeled off from the adhesive layer 2 of the dicing tape 10 after being irradiated with ultraviolet (UV) light (see FIG. 6). Step S208: Peeling (pickup) step).

As shown in FIG. 9E, for example, as shown in FIG. 9E, the semiconductor chip 30a with the die bond film (adhesive layer) 3a, on which the suction collet 50 is brought into contact and landed, is placed on the dicing tape 10. By pushing up the second surface of the base film 1 with a push-up pin (needle) 60, peeling from the edge of the semiconductor chip 30a with the die-bonding film 3a is promoted, and as shown in FIG. Examples include a method of peeling off the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a from the adhesive layer 2 of the dicing tape 10 by suctioning and lifting it with a suction collet 50 of a pickup device (not shown). It will be done. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3a is obtained.

The pickup conditions are not particularly limited as long as they are within a practically acceptable range, and the thrusting speed of the thrusting pin (needle) 60 is usually set within a range of 1 mm/sec to 100 mm/sec. However, if the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm, the speed should be set within the range of 1 mm/sec to 20 mm/sec from the viewpoint of suppressing damage to the thin film semiconductor chip 30a. It is preferable. From the viewpoint of productivity, it is more preferable that the speed can be set within a range of 5 mm/sec or more and 20 mm/sec or less.

In addition, from the same viewpoint as above, it is preferable that the push-up height of the push-up pins at which the semiconductor chip 30a can be picked up without being damaged can be set within a range of 100 μm or more and 600 μm or less. From the viewpoint of reduction, it is more preferable that the thickness can be set within a range of 100 μm or more and 450 μm or less. From the viewpoint of productivity, it is particularly preferable that the thickness can be set within the range of 100 μm or more and 350 μm or less. It can be said that a dicing tape that can reduce the push-up height has excellent pick-up properties.

As explained above, the dicing tape 10 of the present invention, which is composed of the base film 1 and the adhesive layer 2, is applied to the die bond film (adhesive layer 2) on the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. When used in the form of a dicing die-bond film 20 in which the agent layer) 3 is laminated in close contact with each other in a peelable manner, a die-bond film with high fluidity and thickness such as a wire-embedded die-bond film is laminated and applied. Even in this case, the die bond film 3 is cut well by cool expansion, and the edge portion of the cut die bond film 3a is appropriately peeled from the adhesive layer 2 of the dicing tape 10. The peeled edge portion of the die-bonding film 3a of each cut semiconductor chip 30a with the die-bonding film 3a is applied to the adhesive layer 2 after UV irradiation by pushing up a jig from the lower surface of the dicing tape and suctioning it by a suction collet. - The phenomenon of strong re-adhesion to the extent that it cannot be easily peeled off even by lifting is significantly suppressed, and the semiconductor chip 30a with the die bond film 3a can be favorably picked up from the adhesive layer 2 of the dicing tape 10 after being irradiated with ultraviolet rays.

The manufacturing method explained in FIGS. 9(a) to 9(f) is an example (SDBG) of the manufacturing method of the semiconductor chip 30a using the dicing die bond film 20, and the dicing tape 10 is used in the form of the dicing die bond film 20. The methods used are not limited to those described above. That is , the dicing die bond film 20 can be used without being limited to the above method as long as it can be attached to the semiconductor wafer 30 during dicing.

Among these, the dicing tape 10 of the present invention is suitable as a dicing tape for use as a dicing die bond film 20 by integrating with a wire-embedded die bond film in a manufacturing method for obtaining a thin film semiconductor chip such as DBG, stealth dicing, SDBG, etc. It is. Of course, it is also possible to use it integrated with a general-purpose die bond film.

<Method for manufacturing semiconductor devices>
A semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that is an integrated dicing tape 10 and a die bond film 3 to which this embodiment is applied will be specifically described below.

The semiconductor device (semiconductor package) is manufactured by, for example, bonding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a described above to a support member for mounting a semiconductor chip or a semiconductor chip by heat-pressing, and then a wire bonding process and a sealing process. It can be obtained through a process such as a sealing process using a material.

FIG. 12 shows an example of a semiconductor device with a laminated structure mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a wire-embedded die bond film 3 to which this embodiment is applied. It is a schematic cross-sectional view of an aspect. The semiconductor device 70 shown in FIG. 12 includes a semiconductor chip mounting support substrate 71, cured die bond films (adhesive layers) 3a1 and 3a2, a first-stage semiconductor chip 30a1, a second-stage semiconductor chip 30a2, A sealing material 75 is provided. The semiconductor chip mounting support substrate 71, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 76 for the semiconductor chip 30a2.

A plurality of external connection terminals 72 are arranged on one surface of the semiconductor chip mounting support substrate 71, and a plurality of terminals 73 are arranged on the other surface of the semiconductor chip mounting support substrate 71. The semiconductor chip mounting support substrate 71 has wires 74 for electrically connecting connection terminals (not shown) of the semiconductor chips 30a1 and 30a2 and external connection terminals 72. The semiconductor chip 30a1 is bonded to the semiconductor chip mounting support substrate 71 using a hardened die bond film 3a1 in such a manner that the unevenness caused by the external connection terminals 72 is embedded. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 by a hardened die bond film 3a2. The semiconductor chip 30a1, the semiconductor chip 30a2, and the wire 74 are sealed with a sealant 75. In this way, the wire-embedded die bond film 3a is suitably used in a semiconductor device having a laminated structure in which a plurality of semiconductor chips 30a are stacked.

Further, FIG. 13 shows one aspect of another semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a general-purpose die bond film 3 to which this embodiment is applied. FIG. A semiconductor device 80 shown in FIG. 13 includes a semiconductor chip mounting support substrate 81, a cured die bond film 3a, a semiconductor chip 30a, and a sealing material 85. The semiconductor chip mounting support substrate 81 is a support member for the semiconductor chip 30a, and connects connection terminals (not shown) of the semiconductor chip 30a and external connections arranged on the main surface of the semiconductor chip mounting support substrate 81. It has a wire 84 for electrically connecting it to a terminal (not shown). The semiconductor chip 30a is bonded to a semiconductor chip mounting support substrate 81 using a hardened die bond film 3a. The semiconductor chip 30a and the wire 7 are sealed with a sealing material 85.

The present invention will be explained in more detail with reference to the following examples, but the present invention is not limited thereto.

1. Production of Base Film 1 The following resins were prepared as materials for producing base films 1(a) to 1(k).

(Thermoplastic crosslinked resin (A) consisting of an ionomer of ethylene/unsaturated carboxylic acid copolymer)
・Resin (IO1)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 60 mol%, melting point: 86°C, MFR: 1 g/ 10 minutes (190℃/2.16kg load), density: 0.96g/ ^cm3
・Resin (IO2)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 70 mol%, melting point: 87°C, MFR: 1 g/ 10 minutes (190℃/2.16kg load), density: 0.96g/ ^cm3

(Polyamide resin (B))
・Resin (PA1)
Nylon 6, melting point: 225°C, density: 1.13g/ ^cm3

(Other resins (C))
・Resin (TPO)
Thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer)
・Resin (POPE)
Polyolefin-polyether block copolymer (polymer type antistatic agent), melting point: 115°C, MFR: 15g/10 minutes (190°C/2.16kg load)
・Resin (PP)
Random copolymerized polypropylene, melting point 138°C
・Resin (EVA)
Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94g/cm ³

(Base film 1(a))
(IO1) was prepared as a thermoplastic crosslinked resin (A) consisting of an ionomer, and (PA1) was prepared as a polyamide resin (B). First, the thermoplastic crosslinked resin (A) made of the ionomer (IO1) and the polyamide resin (B) (PA1) were dry blended at a mass ratio of (A):(B) = 95:5. Next, the dry blended mixture was charged into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for base film 1(a). The obtained resin composition was put into each extruder using a 3-layer T-die film molding machine of 1 type (same resin) and molded at a processing temperature of 240°C to form 3 layers of the same resin composition. A base film 1(a) having a thickness of 90 μm was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 95:5.

(Base film 1(b))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 90:10. In the same manner as the base film 1(a), a 90 μm thick base film 1(b) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 90:10.

(Base film 1(c))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 85:15. In the same manner as the base film 1(a), a 90 μm thick base film 1(c) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 85:15.

(Base film 1(d))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 80:20. In the same manner as the base film 1(a), a 90 μm thick base film 1(d) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 80:20.

(Base film 1(e))
Except that the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) were dry blended at a mass ratio of (A): (B) = 72:28. In the same manner as the base film 1(a), a 90 μm thick base film 1(e) having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 72:28.

(Base film 1(f))
The thermoplastic crosslinked resin (A) consisting of the above ionomer (IO1), the polyamide resin (B) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) and polyolefin-polyether block copolymer (POPE) were prepared. First, as resins for the first layer and the second layer, the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) are used (A): (B) = Dry blending was performed at a mass ratio of 90:10. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and second layers of the base film 1 (g). I got something. In addition, as the resin for the third layer, thermoplastic crosslinked resin (A) made of ionomer = (IO1), polyamide resin (B) = (PA1), thermoplastic polyolefin elastomer (TPO), and polyolefin-polyether block copolymer. The polymers (POPE) were dry blended at a mass ratio of 76:8:8:8. Next, the dry blended mixture was charged into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for the third layer of the base film 1(f). . The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1(f) having a three-layer structure and having a thickness of 80 μm was produced using the composition. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=30 μm/30 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 90:10. Further, the total content of resin (A) and resin (B) in the entire layer was 95% by mass.

(Base film 1 (g))
The thermoplastic crosslinked resin (A) consisting of the above ionomer (IO1), the polyamide resin (B) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) was prepared. First, as resins for the first layer and the third layer, the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) are used, (A): (B) = Dry blending was performed at a mass ratio of 85:15. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and third layers of the base film 1 (g). I got something. Further, as the resin for the second layer, the above thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) = (TPO) was used alone. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1 (g) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 85:15. Further, the total content of resin (A) and resin (B) in the entire layer was 67% by mass.

(Base film 1 (h))
(IO1) and (IO2) were prepared as the thermoplastic crosslinked resin (A) consisting of the above ionomer, and (PA1) was prepared as the polyamide resin (B). First, as resins for the first layer and the third layer, the thermoplastic crosslinked resin (A) = (IO1) consisting of the above ionomer and the above polyamide resin (B) = (PA1) are used, (A): (B) = Dry blending was performed at a mass ratio of 90:10. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin composition for the first and third layers of the base film 1 (h). I got something. Further, as the resin for the second layer, (IO2) was used alone as the thermoplastic crosslinked resin (A) consisting of the above-mentioned ionomer. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1 (g) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 93:7.

(Base film 1(i))
(IO1) was prepared as a resin (A) consisting of an ionomer. A three-layer structure made of the same resin composition (only the resin (A) consisting of an ionomer) was prepared in the same manner as the base film 1(a) except that the polyamide resin (B) = (PA1) was not dry blended. A base film 1(i) having a thickness of 90 μm was prepared. The thickness of each layer was 1st layer (side in contact with adhesive layer 2)/2nd layer/3rd layer=20 μm/50 μm/20 μm.

(Base film 1(j))
The base film 1 (g ), a base film 1 (j) with a thickness of 90 μm and having a three-layer structure made of two types of resin compositions was produced. The mass ratio of the total amount of thermoplastic crosslinked resin (A) consisting of an ionomer and the total amount of polyamide resin (B) in the entire layer is: total amount of (A): total amount of (B) = 90:10. Further, the total content of resin (A) and resin (B) in the entire layer was 44% by mass.

(Base film 1(k))
(PP) and (EVA) were also prepared as other resins (C). (PP) was used as the resin for the first and third layers, and (EVA) was used as the resin for the second layer. Two types (two types of resin) of each resin were used in a three-layer T-die film molding machine. The samples were put into respective extruders and molded at a processing temperature of 150° C. to produce a base film 1(k) having a three-layer structure of two types of resin compositions and having a thickness of 80 μm. The thickness of each layer was 1st layer (side in contact with the adhesive layer)/2nd layer/3rd layer=8 μm/64 μm/8 μm.

[Elastic modulus of base film at 5% elongation]
The elastic modulus Y _MD at 5% elongation in the MD direction and the elastic modulus Y _TD at 5% elongation in the TD direction of the base film 1 at 0° C. were measured by the following method. First, a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was used as a sample for MD direction measurement (number of samples N = 5), and a test piece was used as a sample for TD direction measurement (number of samples N = 5). Test pieces each having a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared. Next, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were fixed with chucks so that the initial distance between the chucks was 20 mm, and the test piece was After being placed at 0° C. for 1 minute in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Inc., a tensile test was conducted at a speed of 100 mm/min, and the tensile load-elongation curve was measured. Then, from the obtained tensile load-elongation curve, the origin (extension start point) and the tensile load value on the curve corresponding to the 1.0 mm elongation from the origin (5% elongation with respect to the initial distance between chucks 20 mm) ( The slope of the straight line connecting the points (unit: N) was calculated, and the elastic modulus Y at 5% elongation (unit: MPa) was determined using the above-mentioned formula. Measurements were performed in each direction with the number of samples N=5, and the average values were defined as the elastic modulus at 5% elongation _YMD in the MD direction and the elastic modulus at 5% elongation _YTD in the TD direction. Using these values, the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base film 1 formed above was calculated.

The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation at 0° C. of the base films 1(a) to 1(k) used as the base film 1 of the dicing tape 10 of Examples and Comparative Examples is , as shown in Tables 1 to 9, respectively.

2. Preparation of adhesive composition solution
Solutions of the following active energy ray-curable acrylic adhesive compositions 2(a) to 2(u) were prepared as adhesive compositions for the adhesive layer 2 of the dicing tape 10.
In addition, as a copolymerization monomer component constituting the base polymer (acrylic acid ester copolymer) of these adhesive compositions,
・2-ethylhexyl acrylate (2-EHA, molecular weight: 184.3, Tg: -70°C),
・2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15°C),
・Methacrylic acid (MAA, molecular weight: 86.06: Tg: 228°C),
prepared.

In addition, as a polyisocyanate crosslinking agent, a TDI type polyisocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, solid content concentration: 45% by mass, isocyanate group content in solution: 8. 05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups: average 2.8 pieces/1 molecule, theoretical molecular weight: 656.64),
・HDI-based polyisocyanate crosslinking agent (trade name: Coronate HL, solid content concentration: 75% by mass, isocyanate group content in solution: 12.8% by mass, isocyanate group content in solid content: 17.07 Mass%, calculated number of isocyanate groups: average 2.6/1 molecule, theoretical molecular weight: 638.75),
prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(a))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MMA=81.5 parts by mass/17.5 parts by mass/1.0 parts by mass (=442.21 mmol/150.71 mmol/11.62 mmol). A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was prepared by solution radical polymerization using ethyl acetate as a solvent and azobisisobutyronitrile (AIBN) as an initiator. Synthesized. The Tg of the obtained base polymer calculated from the Fox equation is -61°C.

Next, with respect to 100 parts by mass of the solid content of this base polymer, an active energy ray-reactive compound manufactured by Showa Denko K.K., an isocyanate group and an active energy ray-reactive carbon-carbon double bond manufactured by Showa Denko K.K. 2-Isocyanate ethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 piece/1 molecule, double bond group: 1 piece/1 molecule) 19.2 parts by mass (123.75 mmol: 82.11 mol% based on 2-HEA) and reacted with some of the hydroxyl groups of 2-HEA to form a solution of acrylic adhesive polymer (A) having carbon-carbon double bonds in the side chains ( Solid concentration: 50% by mass, weight average molecular weight Mw: 330,000, solid hydroxyl value: 12.7 mgKOH/g, solid acid value: 5.5 mgKOH/g, carbon-carbon double bond content: 1.04 meq /g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, IGM Resins B. V. 4.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B. V. 0.8 parts by mass of a benzyl methyl ketal photopolymerization initiator (trade name: Omnirad 651) manufactured by IGM Resins B. V. 1.0 parts by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad 379EG) manufactured by IGM Resins B. V. 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation, and an HDI-based polyisocyanate crosslinking agent (trade name: Coronate HL, solid content manufactured by Tosoh Corporation) as a crosslinking agent. Concentration: 75% by mass) was blended at a ratio of 5.5 parts by mass (4.1 parts by mass in terms of solid content, 7.65 mmol), diluted with ethyl acetate, and stirred to obtain an active product with a solid concentration of 22% by mass. A solution of energy ray curable acrylic adhesive composition 2(a) was prepared. As shown in Table 1, in active energy ray-curable acrylic adhesive composition 2(a), the isocyanate group (NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer are The equivalent ratio (NCO/OH) was 0.74, the residual hydroxyl group concentration was 0.06 mmol/g, and the carbon-carbon double bond concentration was 1.00 meq/g.

(Solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u))
For the acrylic adhesive polymer (A), the copolymerization ratio of the copolymerization monomer components, the blending amount of the active energy ray-reactive compound, and the copolymerization monomer components were adjusted as shown in Tables 4, 5, and 9, respectively. By changing the method, solutions of acrylic adhesive polymers (B) to (G) were synthesized. The base polymer Tg, weight average molecular weight Mw, acid value, and hydroxyl value of the synthesized acrylic adhesive polymers (B) to (G) are as shown in Tables 4, 5, and 9, respectively. Next, using these acrylic adhesive polymer solutions, the solutions shown in Tables 3 to 6, 8, and 9 were prepared based on 100 parts by mass of the acrylic adhesive polymers (A) to (G) in terms of solid content. Solutions of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u) were prepared by appropriately blending a photopolymerization initiator and a polyisocyanate crosslinking agent as described above. Equivalent ratio of the isocyanate group (NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (OH) possessed by the acrylic adhesive polymer in active energy ray-curable acrylic adhesive compositions 2(b) to 2(u) (NCO/OH), residual hydroxyl group concentration, and carbon-carbon double bond concentration are as shown in Tables 3 to 6, 8, and 9, respectively.

3. Preparation of Solutions of Adhesive Compositions Solutions of adhesive compositions 3(a) to 3(d) below were prepared as adhesive compositions for the die bond film (adhesive layer) 3 of the dicing die bond film 20.

(Solution of adhesive composition 3(a))
A solution of the following adhesive composition solution 3(a) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 26 parts by mass of bisphenol type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd., and cresol novolac type epoxy resin manufactured by Toto Kasei Co., Ltd. 36 parts by mass of resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C), phenol resin manufactured by Mitsui Chemicals, Inc. (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, softening) as a crosslinking agent point: 77°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 1 part by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 25 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C) , water absorption rate: 1% by mass, heating mass reduction rate: 3% by mass) 12 parts by mass, silica filler dispersion manufactured by Admatex Co., Ltd. (trade name: SC2050-HLG, average particle size: 0.50 μm) as an inorganic filler 15 parts by mass, 14 parts by mass of silica filler dispersion (trade name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatex Co., Ltd., silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle Cyclohexanone was added as a solvent to a resin composition consisting of 1 part by mass (diameter: 0.016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, 37 parts by mass of a glycidyl group-containing (meth)acrylic ester copolymer with a low weight average molecular weight Mw and a glycidyl group-containing (meth)acrylic ester copolymer with a high weight average molecular weight Mw were added to the resin composition as a thermoplastic resin. 9 parts by mass of polymer, 0.7 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation, and γ-ureidopropyl triethoxysilane manufactured by GE Toshiba Corporation as a silane coupling agent. 0.3 parts by mass of ethoxysilane (product name: NUC A-189), and 0.03 parts by mass of 1-cyanoethyl-2-phenylimidazole (product name: Curazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. The mixture was stirred and mixed, filtered through a 100-mesh filter, and vacuum degassed to prepare a solution of adhesive composition 3(a) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 Mass %: 42.5 mass %: 26.0 mass %. Further, the content of the inorganic filler was 20.5% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(b))
A solution of the following adhesive composition solution 3(b) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 21 parts by mass of bisphenol F type epoxy resin manufactured by Toto Kasei Co., Ltd. (product name: YDF-8170C, epoxy equivalent: 159, molecular weight: 310, liquid at room temperature), and cresol manufactured by Toto Kasei Co., Ltd. 33 parts by mass of novolac type epoxy resin (product name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C), phenol resin manufactured by Air Water Co., Ltd. (product name: HE200C-10, hydroxyl equivalent: 200, Softening point: 71°C, Water absorption: 1% by mass, Heating mass reduction rate: 4% by mass) 46 parts by mass, Silica filler dispersion manufactured by Admatex Co., Ltd. (trade name: SC1030-HJA, average) as an inorganic filler Cyclohexanone was added as a solvent to a resin composition consisting of 18 parts by mass (particle size: 0.25 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, 16 parts by mass of a glycidyl group-containing (meth)acrylic ester copolymer with a low weight average molecular weight Mw and a glycidyl group-containing (meth)acrylic ester copolymer with a high weight average molecular weight Mw were added to the resin composition as a thermoplastic resin. 64 parts by mass of polymer, 1.3 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent, γ-ureidopropyl triethoxysilane manufactured by GE Toshiba Corporation 0.6 parts by mass of ethoxysilane (product name: NUC A-189), and 0.05 parts by mass of 1-cyanoethyl-2-phenylimidazole (product name: Curazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. The mixture was stirred and mixed, filtered through a 100 mesh filter, and then vacuum degassed to prepare a solution of adhesive composition 3(b) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 44.4 Mass %: 30.0 mass %: 25.6 mass %. Further, the content of the inorganic filler was 10.0% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(c))
A solution of the following adhesive composition solution 3(c) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 11 parts by mass of bisphenol-type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Corporation, and dicyclopentadiene-type epoxy resin manufactured by DIC Corporation. Resin (product name: HP-7200H, epoxy equivalent weight 280, softening point 83°C) 40 parts by mass, bisphenol S type epoxy resin manufactured by DIC Corporation (product name: EXA-1514, epoxy equivalent weight 300, softening point 75°C) 18 Parts by mass, phenolic resin manufactured by Mitsui Chemicals Co., Ltd. as a crosslinking agent (product name: Mirex XLC-LL, hydroxyl equivalent: 175, softening point: 77°C, water absorption: 1% by mass, heating mass reduction rate: 4% by mass) 1 part by mass, 20 mass of phenolic resin manufactured by Air Water Co., Ltd. (product name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 10 parts by mass of phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C, water absorption: 1% by mass, heating mass reduction rate: 3% by mass), As inorganic fillers, 24 parts by mass of silica filler dispersion (product name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatex Co., Ltd., silica (product name: Aerosil R972, average particle size) manufactured by Nippon Aerosil Co., Ltd. Cyclohexanone was added as a solvent to a resin composition consisting of 0.8 parts by mass (0.016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, 30 parts by mass of a glycidyl group-containing (meth)acrylic ester copolymer with a low weight average molecular weight Mw and a glycidyl group-containing (meth)acrylic ester copolymer with a high weight average molecular weight Mw were added to the resin composition as a thermoplastic resin. 7.5 parts by mass of polymer, 0.57 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent, γ-ureido manufactured by GE Toshiba Corporation 0.29 parts by mass of propyltriethoxysilane (trade name: NUC A-189), and 0.023 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. Parts by mass were added, stirred and mixed, filtered through a 100 mesh filter, and then vacuum degassed to prepare a solution of adhesive composition 3(c) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 27.3 Mass %: 50.2 mass %: 22.5 mass %. Further, the content of the inorganic filler was 18.0% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(d))
A solution of the following adhesive composition 3(d) was prepared for use in a general-purpose die bond film. First, 54 parts by mass of a cresol novolac type epoxy resin (trade name: YDCN-700-10, epoxy equivalent weight 210, softening point 80°C) manufactured by Toto Kasei Co., Ltd. as a thermosetting resin, and a crosslinking agent manufactured by Mitsui Chemicals Co., Ltd. 46 parts by mass of phenol resin (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, water absorption rate: 1.8%), silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size 0.5%) as an inorganic filler. Cyclohexanone was added as a solvent to a resin composition consisting of 32 parts by mass of 016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, 74 parts by mass of glycidyl group-containing (meth)acrylic acid ester copolymer 2 was added to the resin composition as a thermoplastic resin, and γ-ureidopropyltriethoxysilane (manufactured by GE Toshiba Corporation) was added as a silane coupling agent. (Product name: NUC A-1160) 5.0 parts by mass, 1.7 parts by mass of γ-ureidopropyltriethoxysilane (Product name: NUC A-189) manufactured by GE Toshiba Corporation, and Shikoku Kasei Co., Ltd. as a curing accelerator. Add 0.1 part by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazole 2PZ-CN) manufactured by the company, stir and mix, filter through a 100 mesh filter, and vacuum degas to obtain a solid content concentration of 20 mass. A solution of % adhesive composition 3(d) was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 Mass %: 14.4 mass %: 12.3 mass %. Further, the content of the inorganic filler was 8.6% by mass based on the total amount of resin components.

4. Production of dicing tape 10 and dicing die bond film 20 (Example 1)
The active energy ray-curable acrylic adhesive composition (a) was applied on the release-treated side of the release liner (thickness: 38 μm, polyethylene terephthalate film) so that the thickness of the adhesive layer 2 after drying was 8 μm. After drying the solvent by applying the solution and heating at a temperature of 100° C. for 3 minutes, the surface of the first layer side of the base film 1 (a) is bonded onto the adhesive layer 2, and the dicing tape 10 The original fabric was prepared. Thereafter, the original fabric of the dicing tape 10 was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer 2.

Next, a solution of the adhesive composition 3(a) for forming the die bond film (adhesive layer) 3 is prepared, and the dried die bond film ( A solution of the above adhesive composition 3(a) was applied so that the thickness of the adhesive layer) 3 was 50 μm, and then the solution was heated at a temperature of 90°C for 5 minutes, and then at a temperature of 140°C for 5 minutes. The solvent was dried by heating in two stages to produce a die bond film (adhesive layer) 3 provided with a release liner. Note that, if necessary, a protective film (for example, a polyethylene film, etc.) may be attached to the dry side of the die-bonding film (adhesive layer) 3.

Subsequently, the die bond film (adhesive layer) 3 provided with the release liner prepared above was cut into a circular shape with a diameter of 335 mm together with the release liner, and the adhesive layer exposed surface (release The liner-free surface) was attached to the two adhesive layer surfaces of the dicing tape 10 from which the release liner had been peeled off. The bonding conditions were 23° C., 10 mm/sec, and a linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 into a circle with a diameter of 370 mm, a circular die bonding film (adhesive layer) 3 with a diameter of 335 mm is laminated on the upper center of the adhesive layer 2 of the circular dicing tape 10 with a diameter of 370 mm. A dicing die bond film 20 (DDF(a)) was prepared.

(Examples 2 to 8)
A dicing die bond film 20 (DDF ( b) to DDF (h)) were produced.

(Examples 9 to 23)
A solution of active energy ray-curable acrylic adhesive composition 2(a) was added to a solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(p) shown in Tables 3 to 6, respectively. Dicing die bond films 20 (DDF(i) to DDF(w)) were produced in the same manner as in Example 2 except for the changes.

(Example 24)
All steps were carried out except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(b) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 30 μm. A dicing die bond film 20 (DDF(x)) was produced in the same manner as in Example 2.

(Example 25)
A dicing die bond film 20 (DDF(y)) was produced in the same manner as in Example 2 except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(c).

(Example 26)
All steps were carried out except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(d) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 20 μm. A dicing die bond film 20 (DDF(z)) was produced in the same manner as in Example 2.

(Comparative example 1)
Substrate film 1(a) was changed to substrate film 1(i), and the solution of active energy ray-curable acrylic adhesive composition 2(a) was added to the active energy ray-curable acrylic adhesive shown in Table 8. Dicing was carried out in the same manner as in Example 1 except that the solution of adhesive composition 2(q) was changed and the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(c). A die bond film 20 (DDF (aa)) was produced.

(Comparative example 2)
All comparative examples except that the base film 1(a) was changed to the base film 1(j) and the solution of adhesive composition 3(c) was changed to the solution of adhesive composition 3(a). A dicing die bond film 20 (DDF (bb)) was produced in the same manner as in Example 1.

(Comparative example 3)
Dicing die bond film 20 (DDF (cc)) was produced in the same manner as Comparative Example 2 except that base film 1 (a) was changed to base film 1 (k).

(Comparative example 4)
Comparative Example 1 except that the solution of active energy ray curable acrylic adhesive composition 2 (q) was changed to the solution of active energy ray curable acrylic adhesive composition 2 (r) shown in Table 8. A dicing die bond film 20 (DDF(dd)) was produced in the same manner as above.

(Comparative Examples 5 to 7)
The solution of active energy ray-curable acrylic adhesive composition 2(a) was changed to the solutions of active energy ray-curable acrylic adhesive compositions 2(s) to 2(u) shown in Table 9, respectively. Dicing die bond films 20 (DDF(ee) to DDF(gg)) were produced in the same manner as in Example 2 except for the above.

5. Measurement of the adhesive strength of the dicing tape after UV irradiation and the shear viscosity of the die bond film The adhesive strength of the dicing tape 10 after UV irradiation and the shear viscosity of the die bond film 3 produced in Examples 1 to 26 and Comparative Examples 1 to 7 are as follows. Measured using the method shown.

5.1 Measurement of the adhesive strength of the adhesive layer 2 of the dicing tape 10 after irradiation with aerobic ultraviolet rays and the adhesive strength of the adhesive layer 2 of the dicing tape 10 after irradiation with anoxic ultraviolet rays to the die bond film (adhesive layer) 3 Above examples For the dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7, the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen conditions and the adhesive strength B after irradiation with ultraviolet rays under anaerobic conditions were measured by the following method.

5.1.1 Adhesion strength A after irradiation with ultraviolet rays under aerobic conditions
First, the dicing tape 10 was cut into a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated using a metal halide lamp from the second side of the adhesive layer of the dicing tape 10 from which the release liner has been peeled off (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) After that, the dicing tape 10 was applied to the stainless steel plate (SUS304/BA plate) from the edge of the two adhesive layers using a rubber roller weighing 2 kg in an environment of a temperature of 23°C and a humidity of 50% RH. A rubber roller was moved back and forth once at a speed of about 5 mm/sec to neatly press and bond the pieces together to obtain a test piece for measurement. After standing still for 20 minutes, the test piece was examined using a stainless steel plate (SUS304/BA plate) in an environment with a temperature of 23°C and a humidity of 50% RH, using an adhesive/film peeling analyzer of the flexible peeling angle type shown in Figure 4. ) The adhesive strength (unit: N/25 mm) of the dicing tape 10 at a peel angle of 90° was measured. The peeling speed was 300 mm/min. The measurement was performed on three test pieces, and the average value of the three test pieces was taken as the adhesive strength A of the dicing tape 10 after irradiation with ultraviolet rays under aerobic conditions.

5.1.2 Adhesive strength B after UV irradiation in anoxic environment
First, the dicing tape 10 was cut into a size of 25 mm in width (in the TD direction of the base film 1) and 120 mm in length (in the MD direction of the base film 1). Next, a stainless steel plate (SUS304/BA plate) was heated at a temperature of 23° C. and a humidity of 50% RH using a rubber roller weighing 2 kg from the end of the adhesive layer 2 of the dicing tape 10 from which the release liner had been peeled off. A rubber roller was moved back and forth at a speed of about 5 mm/sec in an environment to neatly press and bond the pieces together. After standing still for 20 minutes, ultraviolet rays (UV) with a center wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW/cm ² , cumulative light amount: 150 mJ/cm ² ) This was used as a test piece for measurement. The test piece was diced onto a stainless steel plate (SUS304/BA plate) using the adhesive/film peeling analyzer of the flexible peeling angle type shown in Fig. 4 in the same way as the measurement of the adhesive force A after irradiation with ultraviolet rays under aerobic conditions described above. The adhesive strength (unit: N/25 mm) of the tape 10 was measured at a peeling angle of 90°. The peeling speed was 300 mm/min. The measurement was performed on three test pieces, and the average value of the three test pieces was taken as the adhesive strength B of the dicing tape 10 after irradiation with ultraviolet rays under anoxic conditions.

Furthermore, the ratio A/B of the adhesive force A of the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays under oxidation to the adhesive force B after irradiation with ultraviolet rays under anaerobic conditions was calculated using the measured value of the adhesive force.

5.2 Measurement of shear viscosity at 80°C of die bond film (adhesive layer) 3 For each die bond film (adhesive layer) 3 formed from solutions of adhesive compositions 3(a) to 3(d), The shear viscosity at 80°C was measured by the method below.
A laminate was prepared by laminating a plurality of die bond films (adhesive layer) 3 from which the release liner had been removed at 70° C. so that the total thickness was 200 to 210 μm. Next, the laminate was punched out in the thickness direction into a size of 10 mm x 10 mm to obtain a measurement sample. Subsequently, using a dynamic viscoelasticity device ARES (manufactured by Rheometric Scientific F.E.), a circular aluminum plate jig with a diameter of 8 mm was attached, and then a measurement sample was set. While applying 5% strain to the measurement sample at 35°C, the shear viscosity was measured while raising the temperature of the measurement sample at a heating rate of 5°C/min, and the shear viscosity value at 80°C was determined.

Tables 1 to 9 show the respective structures and measurement results of the dicing tapes 10 and dicing die bond films 20 produced in Examples 1 to 26 and Comparative Examples 1 to 7.

6. Mounting evaluation of dicing tape The dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7 were tested in the following manner in the form of dicing die bond films 20 (DDF(a) to DDF(gg)). We conducted an evaluation.

6.1 Cutting property of die bond film (adhesive layer) First, a semiconductor wafer (silicon mirror wafer, thickness 750 μm, outer diameter 12 inches) W was prepared, and a commercially available backgrind tape was attached to one side. Next, a stealth dicing laser saw (equipment name: DFL7361) manufactured by DISCO Co., Ltd. was used to cut the semiconductor wafer W from the side opposite to the side to which the backgrind tape was attached, until the size of the semiconductor chips 30a after cutting was 4. A modified region is formed at a predetermined depth position on the semiconductor wafer W by irradiating laser light along the lattice-shaped dicing line under the following conditions so that the size is 6 mm x 7.2 mm. 30b was formed.

・Laser irradiation conditions (1) Laser oscillator type: semiconductor laser excitation Q-switch solid-state laser
(2) Wavelength: 1342nm
(3) Oscillation format: pulse
(4) Frequency: 90kHz
(5) Output: 1.7W
(6) Moving speed of semiconductor wafer mounting table: 700 mm/sec

Next, using a back grinding device (device name: DGP8761) manufactured by DISCO Co., Ltd., the semiconductor wafer W having a thickness of 750 μm and having the modified region 30b held on the back grinding tape is ground and thinned. As a result, semiconductor chips 30a having a thickness of 30 μm were obtained. Subsequently, the cutability of the die bond film (adhesive layer) was evaluated by performing a cool expand process using the following method. Specifically, the surface of the semiconductor chip 30a having a thickness of 30 μm opposite to the side to which the back grinding tape was attached was exposed by peeling off the release liner from the dicing die bond film 20 produced in each example and comparative example. The dicing die bond film 20 is laminated onto the semiconductor chip 30a using a laminating device manufactured by DISCO Co., Ltd. (device name: DFM2800) so that the die bond film 3 is in close contact with the semiconductor chip 30a at a lamination temperature of 70° C. and a lamination speed of 10 mm/sec. At the same time, a ring frame (wafer ring) 40 was attached to the exposed portion of the adhesive layer 2 at the outer edge of the dicing tape 10, and then the back grind tape was peeled off. Here, the dicing die-bonding film 20 is arranged in the MD direction of the base film 1 and in the vertical line direction of the lattice-like dividing line of the semiconductor chip 30a (TD direction of the base film 1 and the lattice-like dividing line of the semiconductor chip 30a). It is attached to the semiconductor chip 30a so that the horizontal line direction of the lines coincides with each other.

A laminate (semiconductor wafer 30/die bond film 3/adhesive layer 2/base film 1) containing the semiconductor chip 30a held on the ring frame (wafer ring) 40 is expanded using an expanding device manufactured by DISCO Co., Ltd. (device name: DDS2300 Fully Automatic Die Separator). Next, the die bond film 3 was cut by cool expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die bond film 20 with the semiconductor chip 30a under the following conditions. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained. In this example, the cool expansion process was carried out under the following conditions, but the expansion conditions ("expanding speed", "expanding amount", etc.) were adjusted as appropriate depending on the physical properties of the base film 1, temperature conditions, etc. A cool expansion process may be performed.

・Cool expansion process conditions Temperature: -15℃, Cooling time: 80 seconds,
Expanding speed: 300mm/sec,
Expand amount: 11mm,
(4) Standby time: 0 seconds

The cool-expanded die-bonding film (adhesive layer) 3 was observed from the surface side of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation at a magnification of 200 times, and was then cut. The number of uncut sides among the planned sides was measured. Then, from the total number of sides scheduled to be cut and the total number of uncut sides, the ratio of the number of cut sides to the total number of sides scheduled to be cut was calculated as a cutting rate (%). The observation using the optical microscope was performed on all the semiconductor chips 30a with the die-bonding film 3a. The breakability of the die-bonded film (adhesive layer) 3 was evaluated according to the following criteria, and an evaluation of B or higher was judged as having good breakability.

A: The fracture rate was 95% or more and 100% or less.
B: The fracture rate was 90% or more and less than 95%.
C: The fracture rate was 85% or more and less than 90%.
D: Fracture rate was less than 85%.

6.2 Checking the presence or absence of peeling of the edge portion of the die bond film and calculating the ratio of the area S1 of the edge portion of the die bond film peeled from the adhesive layer After releasing the above cool expand state, use Expand Expand manufactured by DISCO Co., Ltd. again. Using an apparatus (equipment name: DDS2300 Fully Automatic Die Separator), a room temperature expansion process was carried out in its heat expander unit under the following conditions.

・Condition temperature of room temperature expansion process: 23℃,
Expanding speed: 30mm/sec,
Expand amount: 9mm,
(4) Waiting time: 15 seconds

Next, while maintaining the expanded state, the dicing tape 10 was suctioned by a suction table, and the suction table was lowered together with the work while the suction table maintained suction. Then, a heat shrink process was performed under the following conditions to heat shrink the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area.

・Conditions for heat shrink process Hot air temperature: 200℃,
Air volume: 40L/min,
Distance between hot air outlet and dicing tape 10: 20 mm,
Stage rotation speed: 7°/sec

Subsequently, after the dicing tape 10 is released from suction by the suction table, the die bond film (adhesive layer) 3 is peeled off from the adhesive layer 2 of the dicing tape 10 around the four sides of each cut semiconductor chip. The state was observed from the back side (base film 1 side) of the semiconductor chip 30a using an optical microscope (model: VHX-1000, manufactured by Keyence Corporation) at a magnification of 50 times. Since the state of peeling of the die bond film (adhesive layer) 3 was observed to be almost the same on the semiconductor chip 30a at any position, the presence or absence of peeling was confirmed by checking the peeling state of the die bond film (adhesive layer) 3 at a predetermined 20 mm located at the center of the semiconductor wafer 30. The test was performed on semiconductor chips 30a with die bond films 3a. Further, the ratio of the area S1 was calculated by the following method. First, any three semiconductor chips 30a with die-bonding films 3a are selected from among the 20 semiconductor chips 30a with die-bonding films 3a, and the images observed on each are processed using the image processing software "ImageJ" (https://imagej.Nih.gov/ij/ The portion corresponding to the area S1 and the portion corresponding to the area S2 were binarized using the software (available from ). Using the binarized image processing image, the ratio of the area S1 of the edge portion of the small piece of die-bonding film 3a peeled from the adhesive layer 2 to the area of the entire small piece of die-bonding film 3a (=S1+S2) was determined for three measurements. It was calculated as an average value.

6.3 Pick-up property Irradiation intensity was 70 mW/cm 2 from the base film 1 side of the dicing tape 10 holding the semiconductor chip 30a with the die-bonding film (adhesive layer) ^3a that had been cut and separated into pieces by the above-mentioned expanding process. An evaluation sample was prepared by curing the adhesive layer 2 by irradiating the adhesive layer 2 with ultraviolet rays (UV) having a center wavelength of 367 nm so that the cumulative light amount was 150 mJ/cm ² .

Subsequently, a pick-up test was conducted on the semiconductor chip 30a with the die bond film 3a using a device (device name: die bonder DB-830P) having a pick-up mechanism manufactured by Fasford Technology Co., Ltd. (formerly Hitachi High-Technologies Co., Ltd.). . The size of the pickup collet is 4.5 x 7.1 mm, the number of push-up pins is 12, and the pick-up conditions are: the push-up speed of the push-up pin is 5 mm/sec, the push-up height of the push-up pin is 300 μm, They were 200 μm and 150 μm. The number of samples for the pick-up try was set at 20 pieces (chips) at predetermined positions, which were picked up continuously and the number of pieces picked up successfully was counted. The pick-up performance of the semiconductor chip 30a with the die-bonding film 3a at each push-up height was evaluated according to the following criteria.

A: 20 chips were picked up continuously, and the number of chips without chip cracking or pick-up errors (number of successfully picked up chips) was 19 or more and 20 or less (success rate of 95% or more and 100% or less).
B: 20 chips were picked up continuously, and the number of chips without chip cracking or pick-up errors (number of successfully picked up chips) was 17 or more and less than 19 (success rate of 85% or more and less than 95%).
C: 20 chips were picked up continuously, and the number of chips without chip cracking or pickup errors (number of successfully picked up chips) was less than 17 (success rate of less than 85%).

As for the overall evaluation of the above-mentioned pickup test, the smaller the amount of push-up height of the push-up pins for which the evaluation of the number of semiconductor chips 30a with die-bonding film 3a that was successfully picked up is A or B, the more the dicing tape 10 is used. It was judged that the pickup property was better.

6.3. Evaluation Results Tables 10 to 18 show the results of packaging evaluation in the form of dicing die bond films 20 (DDF(a) to DDF(gg)) for each dicing tape 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7. Shown below.

As shown in Tables 10 to 16, the adhesive layer 2 includes base films 1(a) to 1(h) and adhesive compositions 2(a) to 2(p) that meet the requirements of the present invention. , and the dicing die bond film 20 of Examples 1 to 26 (DDF Regarding (a) to DDF(z)), when used in the manufacturing process of semiconductor devices, the die bond film 3 is cut well by cool expansion, and the cut die bond film 3a has its edge portions (four periphery part) is moderately peeled off from the adhesive layer 2 of the dicing tape 10, and the adhesive force A after irradiation with ultraviolet light under aerobic conditions is significantly reduced. The phenomenon in which the edge portion of the peeled die-bonding film 3 is strongly re-adhered to the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays is greatly suppressed, and the adhesive of the semiconductor chip 30a with the dicing die-bonding film 3a due to push-up is suppressed. It was confirmed that peeling from layer 2 progressed smoothly from the edge portion, and favorable results were obtained in the evaluation of pick-up properties.

When comparing Examples in detail, the dicing die bond films of Examples 2 to 4, Example 6, Example 8, Examples 10, 11, Examples 14 to 16, Examples 21, 22, and Examples 24 to 26 Regarding No. 20, it was found that both the breakability and the pick-up performance of the die-bonding film 3 were compatible at a high level in the evaluation, and that it was particularly excellent. That is, the breakage rate of the die-bonding film 3 in the cool expansion process was extremely good, and the yield rate in the pick-up test in which the push-up height of the push-up pin was small was also very good.

The dicing die bond films 20 of Examples 1 and 7 have an average value of the elastic modulus at 5% elongation in the MD direction and TD direction at 0°C of the base films 1(a) and 1(g) (Y _MD + Y _TD )/2 is close to the lower limit of the range of the present invention, so the breakability and pick-up properties of the die bond film 3 are slightly lower than those of the dicing die bond films 20 of Examples 2 to 4, Example 6, and Example 8. It was inferior. On the other hand, in the dicing die bond film 20 of Example 5, the average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation in the MD direction and the TD direction at 0°C of the base film 1 (e) is the same as that of the present invention. Since it was close to the upper limit of the range, the pick-up properties were slightly inferior compared to the dicing die bond films 20 of Examples 2 to 4, Example 6, and Example 8.

In the dicing die bond films 20 of Examples 9 and 18, the hydroxyl value of the acrylic adhesive polymer (A) of the adhesive composition 2(a) is close to the lower limit of the range of the present invention, and the polyisocyanate Since the amount of the crosslinking agent added is also at the lower limit of the range of the present invention, compared to the dicing die bond films 20 of Examples 2, 10, and 11, the die bond of small pieces peeled off from the adhesive layer 2 during cool expansion is The ratio of the area S1 of the edge portion (hatched area) of the film 3a was rather small, that is, the contribution of the effect of reducing the adhesive force after irradiation with ultraviolet light under oxygen conditions was small, and the pick-up property was slightly inferior.

In the dicing die bond films 20 of Examples 12, 17, and 19, the hydroxyl value of the acrylic adhesive polymer (A) of the adhesive composition 2(a) is close to the lower limit of the range of the present invention, Further, the amount of the polyisocyanate crosslinking agent added is also close to or at the upper limit of the range of the present invention, and the amount of the polyisocyanate crosslinking agent added in adhesive composition 2(a) and the amount of the polyisocyanate crosslinking agent The equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) possessed by the acrylic adhesive polymer to the hydroxyl group (-OH) possessed by the acrylic adhesive polymer (-NCO/-OH) is also close to the upper limit of the scope of the present invention. Compared to the dicing die bond films 20 of Nos. 10 and 11, the area S1 of the edge portion (shaded area) of the small piece of die bond film 3a peeled off from the adhesive layer 2 during cool expansion is slightly larger, and after irradiation with ultraviolet rays under aerobic conditions. The effect of reducing the adhesive force was gradually suppressed due to the increase in the re-adhering area, and the pick-up property was slightly inferior. Furthermore, the dicing die bond films 20 of Examples 12 and 19 had slightly inferior cutting properties of the die bond films 3.

In the dicing die-bonding film 20 of Example 13, the hydroxyl value of the acrylic adhesive polymer (A) of the adhesive composition 2(a) is close to the lower limit of the range of the present invention, and the polyisocyanate crosslinking agent has a hydroxyl value close to the lower limit of the range of the present invention. The amount added is also at the lower limit of the range of the present invention, and compared to the dicing die bond film 20 of Example 2 and Examples 14 to 17, the edge portion of the die bond film 3a of the small piece peeled off from the adhesive layer 2 during cool expansion. The ratio of the area S1 (shaded area) was a little small, that is, the contribution of the effect of reducing the adhesive strength after irradiation with ultraviolet rays under oxygen conditions was small, and the pick-up property was a little inferior.

The dicing die bond films 20 of Examples 20 and 23 had adhesive strength after irradiation with ultraviolet rays under oxygen conditions close to the upper limit of the range of the present invention, and compared with the dicing die bond films 20 of Examples 2, 21, and 22, The pickup performance was slightly poor.

On the other hand, as shown in Tables 17 and 18, the properties of the base film 1 and the adhesive composition, and the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen conditions and the adhesive strength B after irradiation with ultraviolet rays under anaerobic conditions. Regarding the dicing die bond films 20 (DDF(aa) to DDF(gg)) of Comparative Examples 1 to 7 produced using the dicing tape 10 that does not satisfy at least one of the requirements, the cutting of the die bond film 3 in the cool expand process It was confirmed that the results were inferior to the dicing die bond films 20 (DDF(a) to DDF(z)) of Examples 1 to 26 in any of the evaluation items of the properties and the pick-up properties in the pick-up process.

Specifically, for the dicing die bond film 20 (DDF(aa)) of Comparative Example 1, the elastic modulus of the base film 1(i) of the dicing tape 10 at 5% elongation in the MD direction and TD direction at 0°C was Average value (Y _MD + Y _TD )/2, the amount of polyisocyanate crosslinking agent added in adhesive composition 2 (q), and the isocyanate group (-NCO) possessed by the polyisocyanate crosslinker and the acrylic adhesive polymer. Since the equivalent ratio (-NCO/-OH) with hydroxyl groups (-OH) is below the lower limit of the range of the present invention, the breakability of the die-bonding film 3 made of the adhesive composition 3(c) in the cool expand process is poor. Even in the cut die-bonding film 3a, no peeling from the adhesive layer 2 was formed at the edge portion (no peeling was observed), and the die-bonding film 3 made of the adhesive composition 3(c) was not used. Compared to the dicing die-bond film 20 (DDF(y)) of Example 25, the die-bond film 3 made of adhesive composition 3(c) had inferior results in both evaluation of breakability and pick-up property. was confirmed.

Similarly, for the dicing die bond films 20 (DDF (bb)) and (DDF (cc)) of Comparative Examples 2 and 3, the base films 1 (j) and 1 (l) of the dicing tape 10 were heated at 0°C. The average value of the elastic modulus at 5% elongation in the MD direction and the TD direction (Y _MD + Y _TD )/2, the amount of polyisocyanate crosslinking agent added in adhesive composition 2 (q), and the amount of the polyisocyanate crosslinking agent Since the equivalent ratio (-NCO/-OH) between isocyanate groups (-NCO) and hydroxyl groups (-OH) possessed by the acrylic adhesive polymer is below the lower limit of the range of the present invention, the adhesive composition in the cool expand process The die-bonding film 3 made of 3(a) has poor cutting properties, and even in the cut die-bonding film 3a, no peeling from the adhesive layer 2 is formed at the edge portion (no peeling is observed). In comparison with the dicing die bond films 20 (DDF(a) to DDF(q)) and (DDF(t) to DDF(w)) of Examples 1 to 17 and 20 to 23, It was confirmed that the die-bonding film 3 composed of the following was inferior in both evaluations of breakability and pick-up performance.

Furthermore, regarding the dicing die bond film 20 (DDF(dd)) of Comparative Example 4, the adhesive composition 2(a) of the dicing tape 10 satisfies the requirements of the present invention, but the adhesive composition 2(a) of the base film 1(i) is The average value (Y _MD + Y _TD )/2 of the elastic modulus at 5% elongation in the MD direction and TD direction at °C is below the lower limit of the range of the present invention, and the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen exceeds the upper limit of the range of the present invention, the die-bonding film 3 made of the adhesive composition 3(a) has poor cutting properties in the cool-expanding process, and the cut die-bonding film 3a has adhesive layers 2 on its four corners. Although a slight peeling state was formed, the adhesive strength A after irradiation with ultraviolet rays under oxygen conditions was large, and compared with, for example, the dicing die bond film 20 (DDF (g)) of Example 7, the adhesive composition It was confirmed that the die-bonding film 3 made of No. 3(a) had poor results in both evaluations of breakability and pick-up performance.

Furthermore, regarding the dicing die bond film 20 (DDF(ee)) of Comparative Example 5, the base film 1(b) of the dicing tape 10 satisfies the requirements of the present invention, but the The amount of the isocyanate crosslinking agent added and the equivalent ratio (-NCO/-OH) of the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent and the hydroxyl group (-OH) possessed by the acrylic adhesive polymer are within the scope of the present invention. Although the cuttability of the die-bond film 3 made of adhesive composition 3(a) in the cool-expanding process was good, the die-bond film 3a that had been cut had an adhesive layer on its edge portion. 2 was not formed (no peeling was observed), and, for example, compared to the dicing die bond film 20 (DDF(i)) of Example 9, the pick-up property evaluation was slightly inferior. This was confirmed.

Furthermore, regarding the dicing die bond film 20 (DDF(ff)) of Comparative Example 6, the various properties of the base film 1(b) and the adhesive composition 2(t) of the dicing tape 10 satisfy the requirements of the present invention. but,
Since the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet rays under oxygen exceeds the upper limit of the range of the present invention, the breakability of the die bond film 3 made of the adhesive composition 3(a) in the cool expand process is good. In the cut die-bonding film 3a, although a state was formed in which the edge portion (fourth circumferential portion) was moderately peeled from the adhesive layer 2 of the dicing tape 10, the adhesive strength A was large after irradiation with ultraviolet rays under oxygen conditions. For example, compared with the dicing die bond film 20 (DDF(p)) of Example 16, it was confirmed that the results were inferior in the evaluation of pick-up properties.

Furthermore, regarding the dicing die bond film 20 (DDF (gg)) of Comparative Example 7, the adhesive strength A of the base film 1 (b) and the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet rays under oxygen conditions and the adhesive strength A under oxygen-free conditions Although the requirements of the present invention of adhesive strength B after UV irradiation are met, the amount of the polyisocyanate crosslinking agent added in adhesive composition 2(u), the isocyanate group (-NCO) possessed by the polyisocyanate crosslinking agent, and the acrylic adhesive Since the equivalent ratio (-NCO/-OH) of the hydroxyl group (-OH) of the adhesive polymer exceeds the upper limit of the scope of the present invention, the die-bonding film 3 made of the adhesive composition 3(a) is Although the die-bonding film 3a was cut without any problems, the cut die-bonding film 3a was peeled off excessively and irregularly from the adhesive layer 2 of the dicing tape 10 from its edge portions (four peripheral portions) toward the center. As a result, during pickup, the area of the die-bonding film 3a peeled off from the adhesive layer re-adhered to the adhesive layer 2 after the dicing tape 10 is irradiated with ultraviolet rays becomes too large. It was confirmed that the pick-up performance was inferior in comparison to dicing die bond film 20 (DDF(l)). Further, after the expanding process, cracks in the adhesive layer 2 and peeling off from the base film 1 were observed in some parts.

1...Base film,
2...adhesive layer,
3, 3a1, 3a2...die bond film (adhesive layer, adhesive film),
4...Stainless steel plate (SUS304/BA plate),
5... Flat plate cross stage,
6...actuator,
7...Load cell,
8...Rotating stage,
9...Semiconductor chip with die bond film,
10...Dicing tape ,
20 ...Dicing die bond film,
W, 30... semiconductor wafer,
30a, 30a1, 30a2...semiconductor chip,
30b... Modified region (broken region in FIGS. 7(c) to (f), FIGS. 8(a) and (b)),
30c... Semiconductor wafer cutting line 31... Semiconductor wafer center part 32... Semiconductor wafer left part 33... Semiconductor wafer right part 34... Semiconductor wafer upper part 35... Semiconductor wafer lower part 40... Ring frame (wafer ring),
41... Holder,
50...Adsorption collet,
60... Push-up pin (needle)
70, 80...Semiconductor devices 71, 81...Semiconductor chip mounting support substrate 72...External connection terminals,
73...terminal,
74, 84...Wire 75, 85...Sealing material 76...Supporting member

Claims (13)

A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has an elastic modulus at 5% elongation Y _MD in the MD direction (flow direction during film formation of the base film) at 0°C, and an elastic modulus in the TD direction (direction perpendicular to the MD direction) at 0°C. When the elastic modulus at 5% elongation is Y _TD , the average value of the elastic modulus at 5% elongation (Y _MD + Y _TD )/2 has a value in the range of 165 MPa or more and 260 MPa or less,
The active energy ray-curable adhesive composition comprises an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate crosslinker that undergoes a crosslinking reaction with the hydroxyl group. Contains an agent,
The acrylic adhesive polymer has a hydroxyl value in the range of 12.0 mgKOH/g or more and 40.5 mgKOH/g, and the polyisocyanate crosslinking agent is added to 2.0 parts by mass based on 100 parts by mass of the acrylic adhesive polymer. The equivalent ratio (-NCO/ -OH) is adjusted within the range of 0.14 or more and 1.32 or less,
The adhesive layer of the dicing tape has an adhesive strength A after irradiation with ultraviolet light under aerobic conditions to a stainless steel plate (SUS304/BA plate) at 23° C. (integrated amount of ultraviolet light: 150 mJ/m ² , peeling angle: 90°, peeling speed: 300mm/min) is in the range of 3.50N/25mm or less, and the adhesive strength B after irradiation with ultraviolet rays in an oxygen-free environment on a stainless steel plate (SUS304/BA plate) at 23°C (integrated amount of ultraviolet light: 150 mJ/m ² , peeling angle: 90°, peeling speed: 300 mm/min) is in the range of 0.25 N/25 mm or more and 0.70 N/25 mm or less,
dicing tape. According to claim 1, the base film is a resin film made of a resin composition containing a resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid copolymer and a polyamide resin (PA). Dicing tape as described. The active energy ray-curable adhesive composition includes, as the photopolymerization initiator, at least an α-aminoalkylphenone photopolymerization initiator (a) and an alkylphenone other than the α-aminoalkylphenone photopolymerization initiator. The dicing tape according to claim 1 or 2, comprising three types of photopolymerization initiators: a photopolymerization initiator (b) and an acylphosphine oxide photopolymerization initiator (c). The above α-aminoalkylphenone photopolymerization initiator (a), an alkylphenone photoinitiator other than the α-aminoalkylphenone photoinitiator (b), and an acylphosphine oxide photopolymerization initiator (c) The content of each of α-aminoalkylphenone photopolymerization initiator (a) is in the range of 0.8 parts by mass or more and 5.0 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer, α -A range of an alkylphenone photoinitiator (b) other than the aminoalkylphenone photoinitiator from 0.2 parts by mass to 5.0 parts by mass, and an acylphosphine oxide photoinitiator (c) The dicing tape according to claim 3, wherein the amount is in the range of 0.2 parts by mass or more and 2.0 parts by mass or less. According to any one of claims 1 to 4, the ratio A/B of the adhesive strength A after irradiation with ultraviolet rays under oxidation to the adhesive strength B after irradiation with ultraviolet rays under anaerobic conditions is in the range of 3.00 or more and 5.00 or less. The dinning tape mentioned. The dicing tape is made by expanding (stretching) a sheet-like laminate in which a die bond film and a plurality of individualized semiconductor chips are sequentially laminated on the adhesive layer at a temperature of -30°C to 0°C. The dicing tape according to any one of claims 1 to 5, which is used to cut the die-bonding film according to the shape of the diced semiconductor chip. The dicing tape is produced by expanding (stretching) the dicing tape to which the sheet-like laminate is attached at a temperature in the range of -30°C or higher and 0°C or lower to match the shape of the individualized semiconductor chips. The dicing tape according to any one of claims 1 to 6, wherein when the die-bonding film is cut, edge portions (four peripheral portions) of the die-bonding film are peeled off from the adhesive layer. The die-bond film that has been cut to fit the shape of the individualized semiconductor chips has a ratio of the area of the edge portion (four peripheral portions) of the die-bond film that has been peeled off from the adhesive layer to the entire cut die-bond film. The dicing tape according to any one of claims 1 to 7, which has an area of 10% or more and 45% or less with respect to the area of the dicing tape. A dicing die bond film, wherein the die bond film is releasably provided on the adhesive layer of the dicing tape according to any one of claims 1 to 8. The dicing die bond film according to claim 9, wherein the die bond film contains a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, and a phenol resin as resin components. The dicing die bond film according to claim 9 or 10, wherein the die bond film is a wire-embedded die bond film. The dicing die bond film according to claim 11, wherein the wire-embedded die bond film has a shear viscosity at 80° C. in a range of 200 Pa·s or more and 11,000 Pa·s or less. A method for manufacturing a semiconductor device, using the dicing tape according to any one of claims 1 to 8.