JP5916295B2 - Wafer processing tape and method of manufacturing semiconductor device using wafer processing tape - Google Patents

Description

  The present invention relates to a wafer processing tape, and more particularly to a wafer processing tape including a dicing die bonding film having two functions of a dicing tape and a die bonding film. The present invention also relates to a method of manufacturing a semiconductor device using the wafer processing tape.

  Recently, as a wafer processing tape, a dicing tape for fixing the wafer when cutting and separating (dicing) the wafer into individual chips, and bonding the cut chips to a lead frame, a package substrate, or the like, or In the stacked package, a dicing die bonding film having both functions of a die bonding film (also referred to as a die attach film) for stacking and bonding chips to each other has been developed.

  Such a dicing / die bonding film is pre-cut in consideration of workability such as attachment to a wafer and attachment to a ring frame during dicing.

  Examples of the pre-cut dicing / die bonding film are shown in FIGS. FIGS. 5, 6 </ b> A, and 6 </ b> B are a schematic view, a plan view, and a cross-sectional view of a wafer processing tape 30 provided with a dicing die bonding film 35, respectively. The wafer processing tape 30 includes a release film 31, an adhesive layer 32, and an adhesive tape 33. The adhesive layer 32 is processed into a circle corresponding to the shape of the wafer, and has a circular label shape. The adhesive tape 33 is obtained by removing the peripheral area of the circular portion corresponding to the shape of the ring frame for dicing. As shown in the drawing, the adhesive tape 33 includes a circular label portion 33a and a peripheral portion 33b surrounding the outside. Have. The adhesive layer 32 and the circular label portion 33a of the pressure-sensitive adhesive tape 33 are laminated with their centers aligned, and the circular label portion 33a of the pressure-sensitive adhesive tape 33 covers the adhesive layer 32 and is released from the periphery thereof. It is in contact with the film 31. The dicing / die bonding film 35 is constituted by a laminated structure including the adhesive layer 32 and the circular label portion 33 a of the adhesive tape 33.

  When dicing the wafer, the release film 31 is peeled off from the laminated adhesive layer 32 and the adhesive tape 33, and the back surface of the wafer W is pasted on the adhesive layer 32 as shown in FIG. A dicing ring frame R is adhesively fixed to the outer peripheral portion of the circular label portion 33a of the tape 33. In this state, the wafer W is diced, and then the adhesive tape 33 is subjected to a curing process such as ultraviolet irradiation to pick up a chip. At this time, since the adhesive film 33 has a reduced adhesive force due to the curing process, the adhesive film 33 is easily peeled off from the adhesive layer 32, and the chip is picked up with the adhesive layer 32 attached to the back surface. The adhesive layer 32 attached to the back surface of the chip then functions as a die bonding film when the chip is bonded to a lead frame, a package substrate, or another chip.

  By the way, as shown in FIGS. 5 and 6, the wafer processing tape 30 as described above has a thicker portion where the adhesive layer 32 and the circular label portion 33 a of the adhesive tape 33 are laminated than the other portions. . For this reason, when a long wafer processing tape 30 is rolled as a product using a cylindrical winding core, the adhesive layer 32 and the circular label portion 33a of the adhesive tape 33 are adhered to the laminated portion. A phenomenon in which the step between the adhesive tape 33 formed by removing the tape 33 and the release film 31 overlaps and the step is transferred to the surface of the flexible adhesive layer 32, that is, a transfer mark as shown in FIG. (Also referred to as label marks, wrinkles or winding marks) occurs. Such transfer marks are particularly noticeable when the adhesive layer 32 is formed of a soft resin or has a thickness, or when the number of windings of the wafer processing tape 30 is large. When the transfer mark is generated, air is caught between the adhesive layer and the wafer and does not come into close contact with each other. As a result, adhesion failure may occur, and the semiconductor product may be defective.

  In order to suppress the generation of the transfer mark, it is conceivable to reduce the winding pressure of the wafer processing tape. However, in this method, the winding of the product is generated, and for example, it is difficult to set the tape on the tape mounter. There is a risk that trouble may occur during actual use of the wafer processing tape.

  Moreover, in patent document 1, in order to suppress generation | occurrence | production of the label traces as described above, the total film thickness of the adhesive layer and the adhesive tape, An adhesive sheet provided with a support layer having an equivalent or greater film thickness is disclosed. The adhesive sheet of Patent Document 1 is provided with a support layer, so that the winding pressure applied to the adhesive sheet is dispersed or collected in the support layer to suppress the generation of transfer marks.

  However, in the above adhesive sheet, since the support layer is formed on the peeling substrate other than the adhesive layer and the pressure-sensitive adhesive tape that are required when manufacturing a semiconductor device, the width of the support layer is reduced. There has been a problem that the width of the support layer is narrow with respect to the outer diameter of the adhesive layer and the pressure-sensitive adhesive tape, and the effect of suppressing the label mark is not sufficient. Also, since the support layer is generally not sticky and does not adhere well to the release substrate (PET film), it floats from the release substrate at the narrowest part of the support layer, and is diced to the wafer. When bonding the bonding film, the above-mentioned floating portion is caught by the apparatus, and the wafer is damaged.

  Therefore, a long base film, a pressure-sensitive adhesive film comprising a pressure-sensitive adhesive layer provided in a long film shape on the base film, and a long film shape provided on the pressure-sensitive adhesive layer There has been proposed a wafer processing tape that includes an adhesive layer and the pressure-sensitive adhesive layer includes a radiation polymerizable compound and a photoinitiator (Patent Document 2).

  According to this wafer processing tape, since the pressure-sensitive adhesive layer contains a radiation polymerizable compound and a photoinitiator, by irradiating light of a wavelength at which the photoinitiator reacts to a desired position of the pressure-sensitive adhesive layer, A part of the pressure-sensitive adhesive layer cured at a desired position, size and shape and a part of the pressure-sensitive adhesive layer which is not cured can be formed. Therefore, by exposing the pressure-sensitive adhesive layer at a position corresponding to the ring frame, the portion corresponding to the ring frame of the pressure-sensitive adhesive layer is cured, the adhesiveness is lowered, and the adhesive layer at the position corresponding to the portion is formed. Since it can peel, it is not necessary to pre-cut the adhesive layer and the pressure-sensitive adhesive film into a predetermined shape. As a result, when the wafer processing tape is wound as a product in a roll shape, transfer marks can be prevented from being generated in the adhesive layer.

JP 2007-2173 A JP 2010-219086 A

  However, in the wafer processing tape described in Patent Document 2, the adhesive layer and the pressure-sensitive adhesive layer can be easily peeled off after UV curing at the position where the ring frame is bonded. In the portion of the adhesive layer corresponding to the position where the wafer is bonded, the chip and the adhesive layer can be sufficiently retained during dicing before UV curing. There is a problem in that it is difficult to design the peeling force so that the peeling force can be easily peeled off and the chip can be well picked up.

  Therefore, an object of the present invention is to sufficiently suppress the generation of transfer marks on the adhesive layer without winding deviation when the wafer processing tape having the adhesive layer and the pressure-sensitive adhesive tape is wound into a roll shape. An object of the present invention is to provide a wafer processing tape that can easily solve problems such as peeling of a ring frame and a pickup failure. Another object of the present invention is to provide a method for manufacturing a semiconductor device using such a wafer processing tape.

  In order to achieve the above object, a wafer processing tape according to the present invention is formed in a long film shape, and when the wafer is diced, an adhesive tape for holding the wafer and the diced chips; An adhesive layer provided in the form of a long film on the adhesive tape, a long release film provided on the adhesive layer, and a long film provided on the release film And an adhesive layer.

  In the wafer processing tape according to the present invention, it is preferable that the peeling force between the pressure-sensitive adhesive layer and the release film is larger than the peeling force between the adhesive layer and the release film.

  In the wafer processing tape according to the present invention, the adhesive tape is not pre-cut into a shape corresponding to the ring frame, and the adhesive layer is not pre-cut into a shape corresponding to the wafer.

  The wafer processing tape according to the present invention is preferably a pressure-sensitive type in which the pressure-sensitive adhesive layer can be peeled off by applying a force from the outside.

  Further, as the wafer processing tape according to the present invention, the pressure-sensitive adhesive tape has a first pressure-sensitive adhesive layer, and the first pressure-sensitive adhesive layer is a radiation curable type that is cured by irradiation with radiation. preferable.

  In addition, as a method of manufacturing a semiconductor device using the wafer processing tape described above, when the wafer is bonded, at least a portion of the adhesive layer corresponding to a region including a position where the wafer of the adhesive layer is bonded is included. It is preferable to include a step of peeling the layer and the release film from the adhesive layer.

  According to the wafer processing tape of the present invention, since the pressure-sensitive adhesive tape and the adhesive layer are long bodies that are not pre-cut, there is no step on the surface of the wafer processing tape. In addition, there is no transfer mark in which the shape of the stepped portion is transferred to the adhesive layer. Also, since there is no step on the surface of the wafer processing tape and no transfer marks are generated, the wafer processing tape can be wound with an appropriate winding pressure, and is provided on the release film on the back surface of the adhesive tape. Since the adhesive layer is wound with adhesion, there is no misalignment. Furthermore, since the adhesive layer provided on the release film on which the ring frame is to be bonded and the adhesive layer of the adhesive tape that fixes the adhesive layer are provided separately, By optimizing the agent, peeling of the ring frame, adhesive residue on the ring frame, and pickup failure can be solved easily.

It is sectional drawing which shows typically the tape for wafer processing which concerns on this embodiment. It is explanatory drawing which illustrates typically the method to manufacture a semiconductor device using the wafer processing tape which concerns on this embodiment. It is explanatory drawing which illustrates typically the method to manufacture a semiconductor device using the wafer processing tape which concerns on this embodiment. It is explanatory drawing which illustrates typically the method to manufacture a semiconductor device using the wafer processing tape which concerns on this embodiment. It is a schematic diagram of the conventional wafer processing tape. (A) is a schematic plan view of a conventional tape for wafer processing, and (B) is a schematic cross-sectional view. It is a cross-sectional schematic diagram which shows the state by which the wafer and the dicing ring frame were bonded together on the wafer processing tape. It is a schematic diagram for demonstrating the malfunction of the conventional tape for wafer processing.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic sectional view of a wafer processing tape 1 according to this embodiment. 2 to 4 are views for explaining a method of manufacturing a semiconductor device using the wafer processing tape 1 according to this embodiment.

  As shown in FIG. 1, a wafer processing tape 1 according to an embodiment includes a base film 2 and a pressure-sensitive adhesive tape 4 including a first pressure-sensitive adhesive layer 3 provided on the base film 2, and a first pressure-sensitive adhesive layer. 3, an adhesive layer 5 provided on the adhesive layer 3, a release film 6 provided on the adhesive layer 5, and a second pressure-sensitive adhesive layer 7 provided on the release film 6. In addition, the 2nd adhesive layer 7 in this Embodiment is equivalent to the adhesive layer said to a claim. The adhesive layer 5 is not pre-cut into a shape corresponding to the wafer, and the adhesive tape 4 is not pre-cut into a shape corresponding to the ring frame. In the present embodiment, the pressure-sensitive adhesive tape 4 and the adhesive layer 5 are laminated in a long film shape on the long base film 2, and the wafer processing tape 1 is a portion having a different thickness, that is, There are no steps.

  Hereinafter, each component of the wafer processing tape 1 according to the present embodiment will be described in detail.

(Adhesive tape 4)
As the adhesive tape 4, a base film 2 provided with the first adhesive layer 3 can be suitably used. The adhesive tape 4 has a sufficient adhesive force so that the wafer and the diced chip do not peel together with the adhesive layer 5 when dicing the wafer, and the adhesive layer can be easily picked up when the chip is picked up after dicing. 5 has a low adhesive strength so that it can be peeled off. Therefore, it is preferable that the first pressure-sensitive adhesive layer 3 of the pressure-sensitive adhesive tape 4 contains a radiation polymerizable compound and a photoinitiator.

  As the base film 2 of the pressure-sensitive adhesive tape 4, a known film can be used without any particular limitation. However, when the first pressure-sensitive adhesive layer 3 contains a radiation-curable radiation-polymerizable compound, radiation transmission is possible. It is preferable to use those having properties.

  For example, as the material, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic Α-olefin homopolymer or copolymer such as acid methyl copolymer, ethylene-acrylic acid copolymer, ionomer or a mixture thereof, polyurethane, styrene-ethylene-butene or pentene copolymer, polyamide-polyol Listed are thermoplastic elastomers such as copolymers, and mixtures thereof. Moreover, the base film 2 may be a mixture of two or more materials selected from these groups, and may be a single layer or a multilayer.

  In order to increase the gap between the diced chips, it is preferable that necking (occurrence of partial elongation due to poor propagation of force that occurs when the base film 2 is stretched radially) is as small as possible, polyurethane, Examples thereof include a styrene-ethylene-butene or pentene copolymer having a limited molecular weight and styrene content, and it is effective to use a cross-linked substrate film 2 to prevent elongation or deflection during dicing. is there.

  Furthermore, in order to improve the adhesiveness with the pressure-sensitive adhesive layer, the surface of the base film 2 may be appropriately subjected to a treatment such as a corona treatment or a primer layer. The thickness of the base film 2 is not particularly limited, and may be set as appropriate. However, 30 to 300 μm is usually appropriate from the viewpoint of the strength and elongation characteristics and the radiation transmittance.

  Resin used for the 1st adhesive layer 3 of the adhesive tape 4 is not specifically limited, The well-known chlorinated polypropylene resin used for an adhesive, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin, etc. Can be used.

  The resin of the first pressure-sensitive adhesive layer 3 preferably contains a radiation-polymerizable compound, and in addition, it is preferable to prepare it by appropriately blending an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent, and the like. Thereby, it can be hardened with radiation and can be easily peeled off from the adhesive layer 5. The thickness of the 1st adhesive layer 3 is not specifically limited, Although you may set suitably, 5-30 micrometers is preferable. Moreover, the 1st adhesive layer 3 may be comprised by the single layer, and may be comprised by the multiple layer.

  Examples of the radiation polymerizable compound include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 Hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are applicable.

  In addition to the above acrylate compounds, urethane acrylate oligomers can also be used. The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene). A terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) with an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl) Acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) Obtained by the reaction. The pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins.

  Moreover, it is preferable that the resin of the 1st adhesive layer 3 contains a photoinitiator. As photoinitiators, for example, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, Α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -Acetphenone compounds such as phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalene Sulfonyl black Aromatic sulfonyl chloride compounds such as Lido; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer.

(Adhesive layer 5)
The adhesive layer 5 is an adhesive used to fix the chip to a substrate, a lead frame, or the like when it is picked up after the wafer or the like is bonded and then picked up and then peeled off from the adhesive tape 4 and attached to the chip. It is used as Therefore, the adhesive layer 5 has releasability that allows the adhesive layer 5 to be peeled off from the pressure-sensitive adhesive tape 4 while the adhesive layer 5 remains attached to the chip when the chip is picked up. In order to bond and fix the chip to a substrate, a lead frame or the like, it has sufficient adhesion reliability.

  The adhesive layer 5 is obtained by forming a film of an adhesive in advance. For example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyester resin, or polyesterimide used for the adhesive is used. Using resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polyacrylamide resin, melamine resin, etc. and mixtures thereof Although it can comprise, it is preferable that an acrylic copolymer and an epoxy resin are included. Furthermore, it is preferable to contain an inorganic filler. Moreover, in order to reinforce the adhesive force with respect to a chip | tip or a lead frame, it is desirable to add a silane coupling agent or a titanium coupling agent to the said material and its mixture as an additive. The thickness of the adhesive layer 5 is not particularly limited, but is usually preferably about 5 to 100 μm. The adhesive layer 5 may be composed of a single layer or a plurality of layers.

  The epoxy resin is not particularly limited as long as it cures and exhibits an adhesive action, but an epoxy resin having two or more functional groups, preferably having a molecular weight of less than 5000, more preferably less than 3000 can be used. Further, an epoxy resin having a weight average molecular weight of preferably 500 or more, more preferably 800 or more can be used.

  For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy Resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products, halides, hydrogenated products, etc. And a novolak-type epoxy resin. Moreover, what is generally known, such as a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin, can also be applied. These can be used alone or in combination of two or more. Furthermore, components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.

  As the acrylic copolymer, for example, an epoxy group-containing acrylic copolymer can be used. The epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive strength, 0.5% by weight or more is preferable, and gelation can be suppressed if it is 6% by weight or less.

  The amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in the present invention, the epoxy group-containing acrylic copolymer refers to a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by weight based on the obtained copolymer. . The remainder can be a mixture of alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, alkyl methacrylate, and styrene or acrylonitrile. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. There is no restriction | limiting in particular in a polymerization method, For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods.

  There are no particular restrictions on the inorganic filler. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitriding Examples thereof include boron, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more. In order to improve thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. Silica is preferable from the viewpoint of balance of properties.

  The average particle size of the filler is preferably 0.002 to 2 μm, more preferably 0.008 to 0.5 μm, and still more preferably 0.01 to 0.05 μm. If the average particle size of the filler is less than 0.002 μm, the wettability to the adherend tends to decrease, and the adhesion tends to decrease. If the average particle size exceeds 2 μm, the reinforcing effect due to the addition of the filler decreases and the heat resistance decreases. Tend to. Here, the average particle diameter means an average value obtained from the particle diameters of 100 fillers measured by a transmission electron microscope (TEM), a scanning electron microscope (SEM), or the like.

(Release film 6)
As the release film 6, a known film such as a polyethylene terephthalate (PET) type, a polyethylene type, or a film subjected to a release treatment can be used. The thickness of the release film 6 is not particularly limited and may be appropriately set, but is preferably 25 to 50 μm.

(Second adhesive layer 7)
The second pressure-sensitive adhesive layer 7 is a ring for improving the handleability such as transporting the wafer with the wafer processing tape 1 bonded thereto or fixing it to a wafer processing apparatus such as a dicing apparatus in the wafer processing step. It is for pasting a frame. In addition, when the wafer processing tape 1 is wound up in a roll shape, the wafer processing tape 1 adheres to the back surface of the adhesive tape 4 to prevent the wafer processing tape 1 from being wound.

  The resin used for the second pressure-sensitive adhesive layer 7 is not particularly limited, and a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, or the like used for the pressure-sensitive adhesive is used. The resin used for the first pressure-sensitive adhesive layer 3 can be used. Moreover, the thickness of the 2nd adhesive layer 7 is not specifically limited, Although you may set suitably, 5-30 micrometers is preferable. Moreover, the 2nd adhesive layer 7 may be comprised by the single layer, and may be comprised by the multiple layer.

  The second pressure-sensitive adhesive layer 7 is preferably a pressure-sensitive type that can be peeled off by applying a force from the outside.

  Moreover, it is preferable that the peeling force between the second pressure-sensitive adhesive layer 7 and the release film 6 is larger than the peeling force between the adhesive layer 5 and the release film 6. Thus, when the wafer is bonded to the adhesive layer 5, the second adhesive layer 7 and the release film 6 corresponding to the region including the position where the wafer of the adhesive layer 5 is bonded are bonded to the adhesive layer 5. It can be easily peeled off from the layer 5. In order to make the peel force between the second pressure-sensitive adhesive layer 7 and the release film 6 greater than the peel force between the adhesive layer 5 and the release film 6, the adhesive layer 5 of the release film 6. A mold release treatment may be performed only on the side, or a surface treatment such as a corona treatment may be performed on the second pressure-sensitive adhesive layer 7 side of the release film 6 to improve the adhesion.

  The wafer processing tape 1 according to the present embodiment can be manufactured, for example, as follows. A pressure-sensitive adhesive tape 4 is obtained by applying a pressure-sensitive adhesive varnish constituting the first pressure-sensitive adhesive layer 3 on the long base film 2 and drying it by heating. Moreover, the adhesive varnish which comprises the 2nd adhesive layer 7 is apply | coated on the elongate release film 6, and it heat-drys, and obtains a 1st laminated body. The adhesive varnish which comprises the adhesive bond layer 5 is apply | coated to the release film 6 side of the obtained 1st laminated body, and it heat-drys to obtain a 2nd laminated body. The adhesive layer 5 of the second laminate and the first pressure-sensitive adhesive layer 3 of the pressure-sensitive adhesive tape 4 are bonded together so that the wafer processing tape 1 is obtained and wound around a cylindrical core.

<Method for Manufacturing Semiconductor Device>
Next, a method of using the wafer processing tape 1 according to the present embodiment, that is, a method of manufacturing a semiconductor device using the wafer processing tape 1 will be described with reference to FIGS.

(Bonding process)
First, as shown in FIG. 2A, along the inner periphery of the ring frame bonding position where the ring frame is bonded from the second pressure-sensitive adhesive layer 7 side of the wafer processing tape 1, the adhesive layer The cutter blade 8 whose height is adjusted so that the depth of cut into 5 is within 50% of the thickness of the adhesive layer 5 is cut in an annular shape.

  Thereafter, as shown in FIG. 2 (B), an adhesive tape piece 9 is bonded to the inner end surface of the cut, that is, a part of the peripheral surface of the circular shaped portion, and this adhesive tape piece 9 is placed inside the circular shaped portion. By pulling up, a trigger for peeling is created between the release film 6 and the adhesive layer 5, and the second pressure-sensitive adhesive layer 7 and the circular portion of the release film 6 are removed. This circular shape portion is a portion corresponding to a region including a position where the wafer of the adhesive layer 5 is bonded, and includes a position where the wafer of the adhesive layer 5 is bonded by removing this circular shape portion. The area will be exposed. In addition, when the peeling force between the 2nd adhesive layer 7 and the release film 6 is smaller than the peeling force between the adhesive layer 5 and the release film 6, only the 2nd adhesive layer 7 will peel, When the release film 6 remains on the adhesive layer 5 side, the adhesive tape piece 9 is again bonded to the cut inner end surface of the release film 6 and pulled up to pull up the circular shape of the release film 6. The part can be removed.

  Next, as shown in FIG. 2C, the ring frame 11 and the wafer 12 are arranged at predetermined positions on the stage 10, and the inner peripheral surface of the ring frame 11, the second adhesive layer 7, and the release film 6. And the wafer 12 is aligned so that it is located within the circular portion of the adhesive layer 5 exposed by removing the second pressure-sensitive adhesive layer 7 and the release film 6. The ring frame 11 and the wafer 12 are bonded to the wafer processing tape 1.

  Next, as shown in FIG. 3A, the wafer processing tape 1 is cut in an annular shape with a cutter blade 13 from the base film 2 side of the adhesive tape 4 toward the vicinity of the outer periphery of the ring frame 11. The wafer processing tape 1 can be bonded to the wafer 12 and the ring frame 11 by removing the outer portion of the cut as shown in FIG. 3B (see FIG. 3C). In addition, the above-mentioned bonding method is an example and is not limited to this.

(Dicing process)
Next, as shown in FIG. 4A, the wafer 12 is cut and divided into a plurality of chips 14, and the adhesive layer 5 is also divided.

  In addition, when the 1st adhesive layer 3 is a radiation curing type, a radiation is irradiated from the downward direction of the tape 1 for wafer processing. Thereby, the adhesive force of the 1st adhesive layer 3 falls and it becomes possible to peel the adhesive bond layer 5 easily.

(Expanding process)
As shown in FIG. 4B, the wafer processing tape 1 holding the plurality of divided chips 14 is placed on the stage 15 of the expanding apparatus. Then, as shown in FIG. 4C, an expanding process is performed in which the adhesive tape 4 is stretched in the circumferential direction and the radial direction of the wafer 12. Specifically, a hollow cylindrical push-up member 16 is raised from the lower surface side of the pressure-sensitive adhesive tape 4 with respect to the pressure-sensitive adhesive tape 4 in a state where the plurality of diced chips 14 and the adhesive layer 5 are held. 4 is stretched in the circumferential direction and radial direction of the wafer 12. The expanding step widens the distance between the chips 14 to improve the recognition of the chips 14 by a CCD camera or the like, and prevents re-adhesion of the chips 14 caused by the adjacent chips 14 coming into contact with each other at the time of pickup. Can do.

(Pickup process)
After performing the expanding process, the picking-up process which picks up the chip | tip 14 is implemented with the adhesive tape 4 being in the expanded state. Specifically, the chip 14 is pushed up from the lower side of the adhesive tape 4 with a pin, and the chip 14 is picked up by an adsorption jig from the upper surface side of the adhesive tape 4, thereby picking up the separated chip 14 together with the adhesive film. To do.

(Die bonding process)
After performing the pickup process, the die bonding process is performed. Specifically, the semiconductor device is manufactured by bonding the chip 14 to a lead frame, a package substrate, or the like by the adhesive layer 5 picked up together with the chip 14 in the pickup process.

<Example>
Next, examples of the present invention will be described, but the present invention is not limited to these examples.

(Production of adhesive tape)
In 400 g of toluene as a solvent, 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, 1.5 g of methacrylic acid, and a mixed solution of benzoyl peroxide as a polymerization initiator are appropriately adjusted in a dropping amount, and reacted. The temperature and reaction time were adjusted to obtain a solution of a compound having a functional group.

  Next, 2.5 g of 2-hydroxyethyl methacrylate synthesized separately from methacrylic acid and ethylene glycol as a compound having a radiation curable carbon-carbon double bond and a functional group, and hydroquinone as a polymerization inhibitor are appropriately added to the solution of this compound. The addition amount was adjusted and added, and the reaction temperature and reaction time were adjusted to obtain a solution of the compound (A) having a radiation curable carbon-carbon double bond.

  Subsequently, 1 part by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) is added as a curing agent to 100 parts by mass of the compound (A) in the compound (A) solution, and a photopolymerization initiator. (Product name: Irgacure 184, manufactured by Ciba Geigy Japan, Inc.) 0.5 parts by mass and 150 parts by mass of ethyl acetate as a solvent are added to the compound (A) solution and mixed to prepare a radiation curable adhesive composition. Prepared.

  Subsequently, the prepared pressure-sensitive adhesive layer composition was applied to an ethylene-vinyl acetate copolymer base film having a thickness of 100 μm so as to have a dry film thickness of 20 μm, and dried at 110 ° C. for 3 minutes. 1A was produced.

  In addition, 0.2 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) was added as a curing agent to 100 parts by mass of the compound (A) in the compound (A) solution, and photopolymerization started. A radiation curable pressure-sensitive adhesive composition comprising 0.5 parts by mass of an agent (manufactured by Ciba Geigy Japan, Inc., trade name: Irgacure 184) and 150 parts by mass of ethyl acetate as a solvent added to the compound (A) solution and mixed. Was prepared.

  Subsequently, the prepared pressure-sensitive adhesive layer composition was applied to an ethylene-vinyl acetate copolymer base film having a thickness of 100 μm so as to have a dry film thickness of 20 μm, and dried at 110 ° C. for 3 minutes. 1B was produced.

(Formation of second adhesive layer)
100 parts by mass of acrylic resin (mass average molecular weight 600,000, glass transition temperature-20 ° C.) and 10 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) as a curing agent Got. This pressure-sensitive adhesive composition was applied to a release film (38 μm polyethylene terephthalate film) so as to have a dry thickness of 10 μm, and dried at 110 ° C. for 2 minutes to obtain a laminate 2A.

(Formation of adhesive layer)
50 parts by mass of a cresol novolac type epoxy resin (epoxy equivalent 197, weight average molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 1.5 parts by mass of γ-mercaptopropyltrimethoxysilane as a silane coupling agent, γ-ureidopropyltri Cyclohexanone was added to a composition comprising 3 parts by mass of ethoxysilane and 30 parts by mass of silica filler having an average particle size of 16 nm, and the mixture was stirred and mixed, and further kneaded for 90 minutes using a bead mill.

  100 parts by mass of acrylic resin (mass average molecular weight 800,000, glass transition temperature -17 ° C.), 5 parts by mass of dipentaerythritol hexaacrylate as a hexafunctional acrylate monomer, and 0.5 parts by mass of adduct of hexamethylene diisocyanate as a curing agent Then, 2.5 parts by mass of Curazole 2PZ (trade name: 2-phenylimidazole, manufactured by Shikoku Kasei Co., Ltd.) was added, stirred and mixed, and vacuum degassed to obtain an adhesive composition.

  The above adhesive composition is applied to the release film side of the laminate 2A so that the dry thickness is 50 μm, and is heated and dried at 110 ° C. for 2 minutes to be in a B-stage state (intermediate curing state of thermosetting resin) Was formed into a laminate 3A and stored refrigerated. In addition, the adhesive composition was applied to a release film (38 μm polyethylene terephthalate film) to a dry thickness of 50 μm, and dried by heating at 110 ° C. for 2 minutes to obtain a B stage state (a thermosetting resin). A cured intermediate state) film was formed into a laminate 3B, which was refrigerated and stored.

Example 1
When the laminate 3A is obtained, by subjecting the release film to surface treatment, the peel force between the second pressure-sensitive adhesive layer and the release film is 1 (N / 25 mm), and the release film and the adhesive layer It was adjusted so that the peeling force between them was 0.3 (N / 25 mm). The laminated body 3A that has been refrigerated is returned to room temperature, and the pressure-sensitive adhesive film 1A is bonded at room temperature so that the first pressure-sensitive adhesive layer is in contact with the adhesive layer. A wound body 4A was produced by winding with a winding tension of 10 N, and Example 1 was obtained.

(Example 2)
A wound body 4B was produced in the same manner as in Example 1 except that the winding tension on the core was 40 N, and Example 2 was obtained.

(Example 3)
When obtaining the laminate 3A, the peel force between the second pressure-sensitive adhesive layer and the release film is 0.2 (N / 25 mm), and the peel force between the release film and the adhesive layer is 1.0. (N / 25 mm) was adjusted, and the other wound body 4C was prepared in the same manner as in Example 1 to obtain Example 3.

Example 4
When obtaining the laminate 3A, the peel force between the second pressure-sensitive adhesive and the release film is 0.2 (N / 25 mm), and the peel force between the release film and the adhesive layer is 0.3 ( N / 25 mm), and the other wound body 4D similar to that of Example 1 was manufactured as Example 4.

(Example 5)
When obtaining the laminate 3A, the peel force between the second pressure-sensitive adhesive and the release film is 0.9 (N / 25 mm), and the peel force between the release film and the adhesive layer is 1.0 ( N / 25 mm), and the other wound body 4E similar to that of Example 1 was manufactured as Example 5.

(Comparative Example 1)
The laminated body 3B that had been refrigerated was returned to room temperature, and the adhesive layer was adjusted so that the depth of cut into the release film was 10 μm or less, and circular precut processing with a diameter of 220 mm was performed. Thereafter, unnecessary portions of the adhesive layer were removed, and the pressure-sensitive adhesive tape 1A was laminated at room temperature so that the first pressure-sensitive adhesive layer was in contact with the adhesive layer. The adhesive tape 1A was pre-cut with a diameter of 280 mm concentrically with the adhesive layer by adjusting the depth of cut into the release film to 10 μm or less to obtain a circular label. A wound body 4F was produced by winding 400 round labels on an ABS core having an inner diameter of 3 inches at a winding tension of 10 N, and used as Comparative Example 1.

(Comparative Example 2)
A wound body 4G was produced as Comparative Example 2 in the same manner as in Comparative Example 1, except that the winding tension around the core was 40N.

(Comparative Example 3)
The laminated body 3B that has been refrigerated is returned to room temperature, and the pressure-sensitive adhesive film 1A is laminated at room temperature so that the first pressure-sensitive adhesive layer is in contact with the adhesive layer, and is wound on an ABS core having an inner diameter of 3 inches with a winding tension of 10N. A wound body 4H was produced by winding up 100 m to obtain Comparative Example 3.

(Comparative Example 4)
A wound body 4I was produced as Comparative Example 4 in the same manner as in Comparative Example 3, except that the winding tension around the core was 40N.

(Comparative Example 5)
The laminated body 3B that has been refrigerated is returned to room temperature, and the pressure-sensitive adhesive film 1B is laminated at room temperature so that the first pressure-sensitive adhesive layer is in contact with the adhesive layer, and is wound on an ABS core having an inner diameter of 3 inches with a winding tension of 40N. A wound body 4J was produced by winding 100 m to obtain Comparative Example 5.

(Peeling force measurement method)
A method for measuring the peeling force between the adhesive layer and the release film will be described. In order to prevent elongation of the adhesive layer during the peel force measurement test, a support tape having an adhesive force larger than the peel force between the second adhesive layer and the adhesive layer on the adhesive layer side (Sekisui Chemical Co., Ltd.) (Orientated pad tape for packing) is pasted on a flat glass plate using a manual laminating roller (2 kg). And the tape for wafer processing with which the support tape was bonded is cut out to the size of 25 mm x 100 mm, and an adhesive tape is peeled off. The second adhesive layer side surface is fixed to the aluminum plate with double-sided tape, the end of the adhesive layer is partially peeled off from the release film and fixed to the measuring jig, and the support tape is bonded. The peel strength when the agent layer was peeled at an angle of 90 degrees at a pulling speed of 50 mm / min was measured.

  Next, the measuring method of the peeling force between the said 2nd adhesive and a release film is demonstrated. A support tape is bonded to the adhesive layer side in the same manner as described above. Then, the wafer processing tape is cut into a size of 25 mm × 100 mm, and the adhesive tape is peeled off. The first adhesive layer side surface is fixed to the aluminum plate with double-sided tape, the end of the release film is partly peeled off from the second adhesive layer and fixed to the measuring jig, the release film and the support tape The peel strength was measured when the adhesive layer was peeled off at an angle of 90 degrees at a pulling speed of 50 mm / min.

<Evaluation test>
(Transfer marks)
The wound bodies according to Examples 1 to 5 and Comparative Examples 1 to 5 were stored under refrigeration at 5 ° C. for 2 weeks, then returned to room temperature and visually confirmed whether or not there was a transfer mark on the sheet while unwinding. did. The case where there was no transfer mark was marked with ◯, and the case where there was a transfer mark was marked with x. Each evaluation result is shown in Table 1 for Examples 1 to 5, and Table 2 for Comparative Examples 1 to 5.

(Winding misalignment)
The wound bodies according to Examples 1 to 5 and Comparative Examples 1 to 5 were stored under refrigeration at 5 ° C. for 2 weeks, then returned to room temperature, the support was inserted into the core, and the core was vertically set to support. It was left to stand for 1 minute in the state which supported the winding body only with the body, and it was confirmed whether winding deviation generate | occur | produced. A film with a deviation of less than 2 mm from the end of the core was evaluated as ◯, and a film with a deviation of 2 mm or more was evaluated as x. Each evaluation result is shown in Table 1 for Examples 1 to 5, and Table 2 for Comparative Examples 1 to 5.

(Wafer bonding)
About Examples 1-5, by the method of the above-mentioned paragraph [0052]-paragraph [0055], it tried bonding to the tape for wafer processing of a wafer and a ring frame, and a 2nd adhesive layer and a release film were used. The adhesive layer can be peeled from the region including the position where the wafer is bonded, and the wafer and the ring frame can be bonded. The release film cannot be removed together with the second pressure-sensitive adhesive layer and remains on the adhesive layer side. However, it is possible to remove the release film by sticking and pulling the adhesive tape piece on the inner edge of the release film, and when the wafer and ring frame can be pasted without problems. Δ, when the wafer and the ring frame could not be bonded, it was marked as x. In Comparative Examples 1 and 2, the release film was peeled off, and the wafer and the ring frame were tried to be bonded to the adhesive layer and the pre-cut portion of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape 1A, and were able to be bonded. The case was marked with ◯, and the case where it could not be marked with x. For Comparative Examples 3 to 5, the wafer processing tape was cut to a length of 300 mm, the release film was peeled off, and an annular cut was made at the position where the wafer of the adhesive layer was bonded, and then the adhesive layer The wafer is bonded to the wafer bonding position, and the wafer is bonded by irradiating ultraviolet rays with a metal halide lamp (30 mW / cm ² ) so that the integrated irradiation amount becomes 200 mJ / cm ² using the bonded wafer as a mask. The adhesive force of the adhesive layer of the adhesive tape 1A or the adhesive tape 1B of the non-existing part is weakened, the outer part of the above-mentioned annular cut formed in the adhesive layer is peeled off from the adhesive layer, and the exposed adhesive layer When the ring frame was pasted, the case where the wafer and the ring frame could be pasted was marked with ◯, and the case where it was not possible was marked with x. Each evaluation result is shown in Table 1 for Examples 1 to 5, and Table 2 for Comparative Examples 1 to 5.

(Ring frame glue remaining)
For Examples 1 to 5, the second pressure-sensitive adhesive layer was bonded to a SUS ring frame used for dicing with a pressure of 1 N / mm, left at room temperature for 24 hours, and then the film was peeled in the direction of 180 degrees. The ring frame was visually observed. For Comparative Examples 1 and 2, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape 1A was bonded to the ring frame made of SUS with a pressure of 1 N / mm, left at room temperature for 24 hours, and then peeled off in the direction of 180 degrees. The frame was visually observed. For Comparative Examples 3 to 5, the pressure-sensitive adhesive tape 1A after irradiating the ring frame made of SUS with ultraviolet rays with a metal halide lamp (30 mW / cm ² ) at a pressure of 1 N / mm so that the integrated irradiation amount becomes 200 mJ / cm ² The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape 1B was bonded and allowed to stand at room temperature for 24 hours, and then the film was peeled in the direction of 180 ° and the ring frame was visually observed. The case where there was no adhesive residue was marked with ◯, and the case where there was a residue was marked with x. Each evaluation result is shown in Table 1 for Examples 1 to 5, and Table 2 for Comparative Examples 1 to 5. For Comparative Example 4, when the presence or absence of adhesive residue was evaluated by pasting the ring frame to the adhesive layer instead of the pressure-sensitive adhesive layer in the same manner as described above, there may be adhesive residue on the ring frame. confirmed.

(Pickup property)
After bonding a silicon wafer having a thickness of 20 μm to the wafer processing tapes according to Examples 1 to 5 and Comparative Examples 1 to 5 by the above-described method, the silicon wafer and the adhesive layer were combined with a dicing apparatus (manufactured by Disco Corporation, Product name: DFD6340) was used for dicing to 10 mm square. Thereafter, the first pressure-sensitive adhesive layer was irradiated with ultraviolet rays with a metal halide lamp (30 mW / cm ² ) so that the integrated irradiation amount was 200 mJ / cm ² . After that, the wafer processing tape was expanded, and a pick-up test was conducted with a die bonder device (product name: CAP-300, manufactured by Canon Machinery Co., Ltd.) on the 20 chips in the center of the silicon wafer. When there was a thing, it was set as x. Each evaluation result is shown in Table 1 for Examples 1 to 5, and Table 2 for Comparative Examples 1 to 5.

  Since Examples 1-5 and Comparative Examples 3-5 are long bodies in which the pressure-sensitive adhesive tape and the adhesive layer are not pre-cut, even if the winding tension to the core is 40 N, the surface of the wafer processing tape is Since there was no step, no transfer mark was generated in which the shape of the step portion was transferred to the adhesive layer even when the roll was wound and stored. In Examples 1 and 3 to 5, the winding tension was 10 N, but no winding deviation occurred because the second pressure-sensitive adhesive layer was wound on the back surface of the pressure-sensitive adhesive tape. In Comparative Example 3, since the second pressure-sensitive adhesive layer was not provided, winding deviation occurred when the winding tension was 10N.

  On the other hand, in Comparative Examples 1 and 2, since the pressure-sensitive adhesive tape and the adhesive layer are pre-cut, in Comparative Example 2 in which the winding tension to the core is 40 N so that winding deviation does not occur, In Comparative Example 1 in which the winding tension around the core was 10 N so that no transfer marks were generated, no transfer marks were generated, but winding deviation occurred.

  In Examples 1 to 5, since the second pressure-sensitive adhesive layer for bonding the ring frame and the first pressure-sensitive adhesive layer for fixing the adhesive layer for bonding the wafer are provided separately, the wafer and the ring The frame could be bonded well, the pick-up property was good, and there was no adhesive residue on the ring frame. Further, in Examples 1 and 2, since the peeling force between the second pressure-sensitive adhesive layer and the release film is larger than the peeling force between the adhesive layer and the release film, the wafer and the ring frame are pasted. In the process to combine, the 2nd adhesive layer and release film corresponding to the part containing a wafer bonding plan position were able to be peeled at a stretch. In Examples 3 to 5, since the peel force between the second pressure-sensitive adhesive layer and the release film is smaller than the peel force between the adhesive layer and the release film, only the second pressure-sensitive adhesive layer peels off. However, although the release film remained on the adhesive layer side, the wafer and the ring frame could be bonded without problems by removing the release film separately.

  On the other hand, in Comparative Examples 3 and 4, since the adhesive layer of the adhesive tape 1A was irradiated with ultraviolet rays to remove the adhesive layer where the ring frame was bonded, the adhesive strength was weakened. Could not be bonded well. In Comparative Example 5, the ring frame can be satisfactorily bonded even if the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape 1A is irradiated with ultraviolet rays to reduce the adhesive strength in order to remove the adhesive layer at the portion where the ring frame is bonded. Thus, since the adhesive force of the pressure-sensitive adhesive layer was adjusted to be high, the ring frame could be satisfactorily bonded, but the pick-up property deteriorated.

  From the above, according to the wafer processing tape according to the present embodiment, since the pressure-sensitive adhesive tape and the adhesive layer are long bodies that are not pre-cut, there is no step on the surface of the wafer processing tape. When wound up, there is no transfer mark in which the shape of the stepped portion is transferred to the adhesive layer. In addition, since there is no step on the surface of the wafer processing tape and no transfer marks are generated, it can be wound with an appropriate film winding pressure, and the adhesive is provided on the release film on the back surface of the adhesive tape. Since the layers are adhered and wound, there is no misalignment. Furthermore, since the 2nd adhesive layer to which a ring frame will be bonded and the 1st adhesive layer which fixes an adhesive bond layer are provided separately, by optimizing each adhesive Ring frame peeling, adhesive residue on the ring frame, and pickup failure can be solved easily.

1: Wafer processing tape 2: Base film 3: First adhesive layer 4: Adhesive tape 5: Adhesive layer 6: Release film 7: Second adhesive layer 11: Ring frame 12: Wafer 14: Chip

Claims (5)

An adhesive tape that is formed into a long film and holds the wafer and the diced chips when the wafer is diced;
An adhesive layer provided in the form of a long film on the adhesive tape;
A long release film provided on the adhesive layer;
Having a pressure-sensitive adhesive layer provided in the form of a long film on the release film;
The adhesive tape is not pre-cut into a shape corresponding to a ring frame, and the adhesive layer is not pre-cut into a shape corresponding to a wafer.   The wafer processing tape according to claim 1, wherein a peeling force between the pressure-sensitive adhesive layer and the release film is larger than a peeling force between the adhesive layer and the release film. . 3. The wafer processing tape according to claim 1, wherein the pressure-sensitive adhesive layer is a pressure-sensitive type that can be peeled off by applying a force from the outside . The said adhesive tape has a 1st adhesive layer, The radiation curing type which the said 1st adhesive layer hardens | cures by irradiating a radiation , Any of Claims 1-3 characterized by the above-mentioned. The wafer processing tape according to claim 1. It is a manufacturing method of the semiconductor device which manufactures a semiconductor device using the tape for wafer processing according to any one of claims 1 to 4, Comprising: When bonding a wafer, at least of the above-mentioned adhesive layer A method for manufacturing a semiconductor device, comprising a step of peeling a part of the pressure-sensitive adhesive layer and the release film corresponding to a region including a position for bonding a wafer from the adhesive layer.

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