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Ronald D. Schrimpf
Person information
- affiliation: Vanderbilt University, Nashville, TN, USA
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2020 – today
- 2024
- [c6]En Xia Zhang
, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood:
Charge Trapping in Irradiated 3D Devices and ICs (Invited). IRPS 2024: 10 - 2023
- [c5]Sajal Islam
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC 2023: 1-2 - 2021
- [c4]Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf:
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON 2021: 1-4
2010 – 2019
- 2018
- [j15]Alexandre Simionovski, Gilson I. Wirth
A TCAD evaluation of a single Bulk-BICS with integrative memory cell. Microelectron. J. 80: 62-68 (2018) - 2015
- [c3]Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs. IRPS 2015: 2 - [c2]A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. IRPS 2015: 2 - 2014
- [j14]Aditya Kalavagunta
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs. Microelectron. Reliab. 54(3): 570-574 (2014) - [j13]Cher Xuan Zhang, En-xia Zhang
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54(11): 2355-2359 (2014) - 2013
- [j12]Nihaar N. Mahatme, Indranil Chatterjee
An efficient technique to select logic nodes for single event transient pulse-width reduction. Microelectron. Reliab. 53(1): 114-117 (2013) - 2012
- [j11]Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectron. Reliab. 52(11): 2521-2526 (2012) - 2011
- [j10]Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Microelectron. Reliab. 51(2): 212-216 (2011) - [j9]Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf
The sensitivity of radiation-induced leakage to STI topology and sidewall doping. Microelectron. Reliab. 51(5): 889-894 (2011) - [j8]R. Arinero, En-xia Zhang
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51(12): 2093-2096 (2011)
2000 – 2009
- 2009
- [c1]Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf:
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. ESSCIRC 2009: 76-83 - 2008
- [j7]Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella
Total ionizing dose effects in shallow trench isolation oxides. Microelectron. Reliab. 48(7): 1000-1007 (2008) - 2007
- [j6]Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
Hydrogen in MOSFETs - A primary agent of reliability issues. Microelectron. Reliab. 47(6): 903-911 (2007) - [j5]Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf
Effects of device aging on microelectronics radiation response and reliability. Microelectron. Reliab. 47(7): 1075-1085 (2007) - 2006
- [j4]A. M. Albadri, Ronald D. Schrimpf
Single event burnout in power diodes: Mechanisms and models. Microelectron. Reliab. 46(2-4): 317-325 (2006) - 2005
- [j3]P. C. Adell, Ronald D. Schrimpf
Single event transient effects in a voltage reference. Microelectron. Reliab. 45(2): 355-359 (2005) - 2001
- [j2]Loren J. Wise, Ronald D. Schrimpf
A generalized model for the lifetime of microelectronic components, applied to storage conditions. Microelectron. Reliab. 41(2): 317-322 (2001) - [j1]D. Greg Walker
Thermal modeling of single event burnout failure in semiconductor power devices. Microelectron. Reliab. 41(4): 571-578 (2001)
Coauthor Index
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