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"High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors."

R. Arinero et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.05.019

access: closed

type: Journal Article

metadata version: 2024-10-06

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  - https://dblp.org/rec/journals/mr/ArineroZRSFCHMTS11
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné:
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51(12): 2093-2096 (2011)

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