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43rd ESSCIRC 2017: Leuven, Belgium
- 43rd IEEE European Solid State Circuits Conference, ESSCIRC 2017, Leuven, Belgium, September 11-14, 2017. IEEE 2017, ISBN 978-1-5090-5025-3
- Sven Mattisson:
Overview of 5G requirements and future wireless networks. 1-6 - Lorenzo Pedala, Cagri Gurleyuk, Sining Pan, Fabio Sebastiano
, Kofi A. A. Makinwa:
A frequency-locked loop based on an oxide electrothermal filter in standard CMOS. 7-10 - Simone Del Cesta, Andrea Ria
A compact programmable differential voltage reference with unbuffered 4 mA output current capability and ±0.4 % untrimmed spread. 11-14 - Hui Wang
A 420 fW self-regulated 3T voltage reference generator achieving 0.47%/V line regulation from 0.4-to-1.2 V. 15-18 - Qing Dong, Inhee Lee, Kaiyuan Yang
A 1.02nW PMOS-only, trim-free current reference with 282ppm/°C from -40°C to 120°C and 1.6% within-wafer inaccuracy. 19-22 - Moustafa A. Khatib
A noise-efficient, in-pixel readout for FET-based THz detectors with direct incremental A/D conversion. 23-26 - Danilo Montanari, Danilo Manstretta, Rinaldo Castello, Gerardo Castellano:
A 0.7-2 GHz auxiliary receiver with enhanced compression for SAW-less FDD. 27-30 - Robin Ying, Matthew Morton, Alyosha C. Molnar:
A HBT-based 300 MHz-12 GHz blocker-tolerant mixer-first receiver. 31-34 - Po-Han Peter Wang
A 400 MHz 4.5 nW -63.8 dBm sensitivity wake-up receiver employing an active pseudo-balun envelope detector. 35-38 - Erik Ryman, Anders Emrich, Lars J. Svensson, Per Larsson-Edefors:
A 3-GHz reconfigurable 2/3-level 96/48-channel cross-correlator for synthetic aperture radiometry. 39-42 - Naoya Onizawa, Kazumichi Matsumiya
Accuracy/energy-flexible stochastic configurable 2D Gabor filter with instant-on capability. 43-46 - Joao Pedro Cerqueira, Mingoo Seok:
A 0.17-mm2 3.19-nJ/transform 256-point fast fourier transform core based on spatiotemporally fine-grained active leakage suppression. 47-50 - Arvind Singh, Monodeep Kar, Sanu Mathew, Anand Rajan, Vivek De, Saibal Mukhopadhyay:
Improved power side channel attack resistance of a 128-bit AES engine with random fast voltage dithering. 51-54 - Hyung-Gi Kim, Dong-Woo Jee:
A <25 μW CMOS monolithic photoplethysmographic sensor with distributed 1b delta-sigma light-to-digital convertor. 55-58 - Henna Ruokamo, Lauri Hallman
An 80 × 25 pixel CMOS single-photon range image sensor with a flexible on-chip time gating topology for solid state 3D scanning. 59-62 - Henning Schütz, Stefan Gambach, Hans Kaim, Albrecht Rothermel:
Pixel array with 5×5 spatial highpass filter for a retinal implant. 63-66 - Juan A. Leñero-Bardallo, José María Guerrero-Rodríguez
A sun sensor implemented with an asynchronous luminance vision sensor. 67-70 - Harijot Singh Bindra, Chris E. Lokin
A 30fJ/comparison dynamic bias comparator. 71-74 - Samar Elsaegh, Hans Zappe, Yiannos Manoli, Hagen Klauk, Ute Zschieschang:
A 1.6μW tunable organic transimpedance amplifier for photodetector applications based on gain-boosted common-gate input stage and voltage-controlled resistor with ±0.5% nonlinearity. 75-78 - Denis Djekic, Georg E. Fantner
A transimpedance amplifier using a widely tunable PVT-independent pseudo-resistor for high-performance current sensing applications. 79-82 - Adriano Sambucco, Emiliano A. Puia:
Push-pull amplifier with constant transconductance for a current sense application. 83-86 - Yizhe Hu
A 30-GHz class-F23 oscillator in 28nm CMOS using harmonic extraction and achieving 120 kHz 1/f3 corner. 87-90 - Fabio Boscolo, Fabio Padovan, Fabio Quadrelli
A 21GHz 20.5%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset. 91-94 - Josip Mikulic, Gregor Schatzberger, Adrijan Baric:
A 1-MHz on-chip relaxation oscillator with comparator delay cancelation. 95-98 - Hui Wang
A 1.6%/V 124.2 pW 9.3 Hz relaxation oscillator featuring a 49.7 pW voltage and current reference generator. 99-102 - Niels Van Thienen, Patrick Reynaert
A 120GHz in-band full-duplex PMF transceiver with tunable electrical-balance duplexer in 40nm CMOS. 103-106 - Thibaut Gurne, Maarten Strackx, Maarten Tytgat, Jan Cools, Patrick Reynaert
A 20Gbps 1.2GHz full-duplex integrated AFE in 28nm CMOS for copper access. 107-110 - Saurabh Agarwal, Mark Ingels, Marianna Pantouvaki, Michiel Steyaert
Highly integrated wavelength-locked Si photonic ring transmitter using direct monitoring of drop-port OMA. 111-114 - Marcel A. Kossel, Christian Menolfi, Pier Andrea Francese
DDR4 transmitter with AC-boost equalization and wide-band voltage regulators for thin-oxide protection in 14-nm SOI CMOS technology. 115-118 - Yifeng Cai, Yiannos Manoli:
A piezoelectric energy harvester interface circuit with adaptive conjugate impedance matching, self-startup and 71% broader bandwidth. 119-122 - Giuseppe E. Biccario, Massimo de Vittorio, Stefano D'Amico:
A 2.4μW input power electronic interface circuit for piezoelectric MEMS harvesters. 123-126 - Preet Garcha, Dina El-Damak
A 25 mV-startup cold start system with on-chip magnetics for thermal energy harvesting. 127-130 - Rohan Sehgal
A 13mW 64dB SNDR 280MS/s pipelined ADC using linearized open-loop class-AB amplifiers. 131-134 - Takashi Oshima
A 0.11mm2 164dB-FOM 0.18μm CMOS pipelined ADC with novel passive amplification. 135-138 - Francesco Conzatti, Lukas Dörrer, Patrick Torta, Claus Kropf, Dirk Patzold, Jacinto San Pablo Garcia, Venerando Rallos, Norbert Schembera:
A CT ΔΣ ADC with 9/50MHz BW achieving 73/71dB DR designed for robust blocker tolerance in 14nm FinFET. 139-142 - Hechen Wang
A 14-Bit, 1-ps resolution, two-step ring and 2D Vernier TDC in 130nm CMOS technology. 143-146 - Minuk Heo, Sunghyun Bae, Jayeol Lee, Cheonsu Kim, Minjae Lee:
Quantizer-less proportional path fractional-N digital PLL with a low-power high-gain time amplifier and background multi-point spur calibration. 147-150 - Abdel Martinez Alonso
A 7GS/s direct digital frequency synthesizer with a two-times interleaved RDAC in 65nm CMOS. 151-154 - Guenole Lallement, Fady Abouzeid
A 2.7pJ/cycle 16MHz SoC with 4.3nW power-off ARM Cortex-M0+ core in 28nm FD-SOI. 153-162 - Hans Reyserhove
Design margin elimination in a near-threshold timing error masking-aware 32-bit ARM Cortex M0 in 40nm CMOS. 155-158 - Seongjong Kim, Joao Pedro Cerqueira, Mingoo Seok:
Near-Vt adaptive microprocessor and power-management-unit system based on direct error regulation. 163-166 - Athanasios Ramkaj
A 36.4dB SNDR @ 5GHz 1.25GS/s 7b 3.56mW single-channel SAR ADC in 28nm bulk CMOS. 167-170 - Pierluigi Cenci, Muhammed Bolatkale, Robert Rutten, Gerard Lassche, Kofi A. A. Makinwa, Lucien J. Breems:
A 28 nm 2 GS/s 5-b single-channel SAR ADC with gm-boosted StrongARM comparator. 171-174 - Guanhua Wang, Kexu Sun, Qing Zhang, Salam Elahmadi, Ping Gui:
A 43.6-dB SNDR 1-GS/s single-channel SAR ADC using coarse and fine comparators with background comparator offset calibration. 175-178 - Mattias Palm, Daniele Mastantuono, Roland Strandberg, Lars Sundström
A 12b, 1 GSps TI pipelined-SAR converter with 65 dB SFDR through buffer linearization and gain mismatch correction in 28nm FD-SOI. 179-180 - Danny Luu, Lukas Kull, Thomas Toifl, Christian Menolfi, Matthias Braendli
Background calibration using noisy reference ADC for a 12 b 600 MS/s 2 × TI SAR ADC in 14nm CMOS FinFET. 183-186 - Paolo Scaramuzza, Carlo Rubino, Marc Tiebout, Michele Caruso, Markus Ortner, Andrea Neviani, Andrea Bevilacqua
Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems. 187-190 - Stefan Shopov, Ozan D. Gurbuz, Gabriel M. Rebeiz, Sorin P. Voinigescu:
A 13.2-dBm, 138-GHz I/Q RF-DAC with 64-QAM and OFDM free-space constellation formation. 191-194 - Phillip M. Nadeau, Rabia Tugce Yazicigil
Single-BAW multi-channel transmitter with low power and fast start-up time. 195-198 - J. Fuhrmann, J. Moreira, P. Osmann, Andreas Springer
A 15-bit 28nm CMOS fully-integrated 1.6W digital power amplifier for LTE IoT. 199-202 - Khaled Khalaf, Kristof Vaesen, Steven Brebels, Giovanni Mangraviti
A 60GHz 8-way phased array front-end with TR switching and calibration-free beamsteering in 28nm CMOS. 203-206 - Kaushik Dasgupta, Saeid Daneshgar, Chintan Thakkar, Kunal Datta, James E. Jaussi, Bryan Casper:
A 25 Gb/s 60 GHz digital power amplifier in 28nm CMOS. 207-210 - Eunchul Kang, Qing Ding, Maysam Shabanimotlagh, Pieter Kruizinga, Zu-yao Chang, Emile Noothout, Hendrik J. Vos, Johan G. Bosch, Martin D. Verweij, Nico de Jong, Michiel A. P. Pertijs:
A reconfigurable 24 × 40 element transceiver ASIC for compact 3D medical ultrasound probes. 211-214 - Philipp Schönle, Giovanni Rovere, Florian Glaser, Jonathan Bosser, Noé Brun, X. Han, Thomas Burger, Schekeb Fateh, Q. Wang, Luca Benini
A multi-sensor and parallel processing SoC for wearable and implantable telemetry systems. 215-218 - Sirma Orguc, Harneet Singh Khurana, Hae-Seung Lee, Anantha P. Chandrakasan:
0.3 V ultra-low power sensor interface for EMG. 219-222 - Kwantae Kim
A 24 μW 38.51 mΩrms resolution bio-impedance sensor with dual path instrumentation amplifier. 223-226 - Yu Wu, Dai Jiang
A CMOS current driver with built-in common-mode signal reduction capability for EIT. 227-230 - Maoqiang Liu, Arthur H. M. van Roermund, Pieter Harpe:
A 10b 20MS/s SAR ADC with a low-power and area-efficient DAC-compensated reference. 231-234 - Harijot Singh Bindra, Anne-Johan Annema, Simon M. Louwsma, Ed J. M. van Tuijl, Bram Nauta
An energy reduced sampling technique applied to a 10b 1MS/s SAR ADC. 235-238 - Guan-Cheng Wang, Yan Zhu, Chi-Hang Chan, Seng-Pan U, Rui Paulo Martins
A missing-code-detection gain error calibration achieving 63dB SNR for an 11-bit ADC. 239-242 - Cheng-Hsueh Tsai, Giovanni Mangraviti
A 54-64.8 GHz subharmonically injection-locked frequency synthesizer with transmitter EVM between -26.5 dB and -28.8 dB in 28 nm CMOS. 243-246 - Christian Elgaard, Lars Sundström
A 491.52 MHz 840 uW crystal oscillator in 28 nm FD-SOI CMOS for 5G applications. 247-250 - Staffan Ek, Tony Påhlsson, Anders Carlsson, Andreas Axholt, Anna-Karin Stenman, Henrik Sjöland
A 16-20 GHz LO system with 115 fs jitter for 24-30 GHz 5G in 28 nm FD-SOI CMOS. 251-254 - Changhyeon Kim, Kyeongryeol Bong, Injoon Hong, Kyuho Jason Lee, Sungpill Choi, Hoi-Jun Yoo:
An ultra-low-power and mixed-mode event-driven face detection SoC for always-on mobile applications. 255-258 - Chixiao Chen, Hongwei Ding, Huwan Peng, Haozhe Zhu
OCEAN: An on-chip incremental-learning enhanced processor with gated recurrent neural network accelerators. 259-262 - Mingu Kang, Sujan K. Gonugondla
A 19.4 nJ/decision 364K decisions/s in-memory random forest classifier in 6T SRAM array. 263-266 - Majid Zamani, Dai Jiang
A highly accurate spike sorting processor with reconfigurable embedded frames for unsupervised and adaptive analysis of neural signals. 267-270 - Ahmed Fahmy, Jun Liu, Pavan Terdal, Ryan Madler, Rizwan Bashirullah, Nima Maghari:
A synthesizable time-based LDO using digital standard cells and analog pass transistor. 271-274 - Ramnarayanan Muthukaruppan, Tarun Mahajan, Harish Kumar Krishnamurthy, Sumedha Mangal, Am Dhanashekar, Rupak Ghayal, Vivek De:
A digitally controlled linear regulator for per-core wide-range DVFS of atom™ cores in 14nm tri-gate CMOS featuring non-linear control, adaptive gain and code roaming. 275-278 - Anthony Quelen, Franck Badets
A sub-100nW power supply unit embedding untrimmed timing and voltage references for duty-cycled μW-range load in FDSOI 28nm. 279-282 - Dennis Oland Larsen, Martin Vinter, Ivan H. H. Jørgensen:
Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control. 283-286 - Yen-Ting Lin, Wen-Hau Yang, Yu-Sheng Ma, Yan-Jiun Lai, Hung-Wei Chen, Ke-Horng Chen
Unsymmetrical parallel switched-capacitor (UP-SC) regulator with fast searching optimum ratio technique. 287-290 - Nunzio Greco, Alessandro Parisi, Pierpaolo Lombardo, Giuseppe Palmisano, Nunzio Spina, Egidio Ragonese
A 100-mW fully integrated DC-DC converter with double galvanic isolation. 291-294 - Hung-Hsien Wu, Liang-Yun Chen, Chia-Ling Wei
Wide-input-voltage-range and high-efficiency energy harvester with a 155-mV startup voltage for solar power. 295-298 - Jialue Wang, Yang Jiang, Johan Dijkhuis, Guido Dolmans, Hao Gao, Peter G. M. Baltus:
A 900 MHz RF energy harvesting system in 40 nm CMOS technology with efficiency peaking at 47% and higher than 30% over a 22dB wide input power range. 299-302 - Philipp Salz, A. Frisch, Wolfgang Penth, J. Noack, T. Kalla, Rolf Sautter, Michael Kugel, Otto A. Torreiter, G. Sapp, Mike Lee, Eric Fluhr, A. Rozenfeld, Jürgen Pille, Dieter F. Wendel:
A system of array families and synthesized soft arrays for the POWER9™ processor in 14nm SOI FinFET technology. 303-307 - Robert Giterman
An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications. 308-311 - Thomas Haine, Quoc-Khoi Nguyen, François Stas, Ludovic Moreau, Denis Flandre
An 80-MHz 0.4V ULV SRAM macro in 28nm FDSOI achieving 28-fJ/bit access energy with a ULP bitcell and on-chip adaptive back bias generation. 312-315 - Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
1.56GHz/0.9V energy-efficient reconfigurable CAM/SRAM using 6T-CMOS bitcell. 316-319 - Marco Pasotti, Marcella Carissimi, Chantal Auricchio, Donatella Brambilla, Emanuela Calvetti, Laura Capecchi, Luigi Croce, Daniele Gallinari, Cristina Mazzaglia, Vikas Rana, Riccardo Zurla
A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications. 320-323 - Mark Ingels, Davide Dermit, Yao Liu, Hans Cappelle, Jan Craninckx
A 2×14bit digital transmitter with memoryless current unit cells and integrated AM/PM calibration. 324-327 - Atsushi Shirane, Shusuke Kawai, Hiromitsu Aoyama, Rui Ito, Toshiya Mitomo, Hiroyuki Kobayashi, Hiroshi Yoshida, Hideaki Majima, Ryuichi Fujimoto, Hiroshi Tsurumi:
A low voltage 0.8V RF receiver in 28nm CMOS for 5GHz WLAN. 328-331 - Kyoohyun Lim, Sang-Hoon Lee, Byeongmoo Moon, Hwahyeong Shin, Kisub Kang, Yongha Lee, Seungbeom Kim, Jinhyeok Lee, Hyungsuk Lee, Hyunchul Shim, Cheolhoon Sung, Geumyoung Park, Garam Lee, Minjung Kim, Seokyoung Park, Hyosun Jung, Jong-Ryul Lee:
A 65nm CMOS 2×2 MIMO multi-band LTE RF transceiver for small cell base stations. 332-335 - Tong Zhang, Yongdong Chen, Chenxi Huang, Jacques Christophe Rudell:
A low-noise reconfigurable full-duplex front-end with self-interference cancellation and harmonic-rejection power amplifier for low power radio applications. 336-339 - Benjamin Weber
A SAW-less RF-SoC for cellular IoT supporting EC-GSM-IoT -121.7 dBm sensitivity through EGPRS2A 592 kbps throughput. 340-343 - Juan C. Castellanos
A 92.2% peak-efficiency self-resonant hybrid switched-capacitor LED driver in 0.18μm CMOS. 344-347 - Juergen Wittmann, Tobias Funk, Thoralf Rosahl, Bernhard Wicht:
A 12-48 V wide-vin 9-15 MHz soft-switching controlled resonant DCDC converter. 348-351 - Yu-Sheng Ma, Wen-Hau Yang, Yen-Ting Lin, Hsin Chen, Li-Chi Lin, Ke-Horng Chen
A low quiescent current and cross regulation single-inductor dual-output converter with stacking MOSFET driving technique. 352-355 - Mohammad Amayreh, Yiannos Manoli, Matthias Keller:
A 1.85 fA/√Hz fully integrated read-out interface for sub-pA current sensing applications. 356-359 - Sebastien Leroy, Stefan Rigert, Arnaud Laville, Andrea Ajbl, Gael F. Close:
Integrated hall-based magnetic platform for position sensing. 360-363 - Hui Wang
A 5.5 nW battery-powered wireless ion sensing system. 364-367 - Alexander Sun, Enrique Alvarez-Fontecilla, A. G. Venkatesh, Eliah Aronoff Spencer, Drew A. Hall
A 64×64 high-density redox amplified coulostatic discharge-based biosensor array in 180nm CMOS. 368-371 - Christopher Sutardja, Jan M. Rabaey:
Isolator-less near-field RFID reader for sub-cranial powering/data link of mm-sized implants. 372-375 - Hasan Gul, Jac Romme, Paul Mateman, Johan Dijkhuis, Xiongchuan Huang, Cui Zhou, Benjamin Busze, Gert-Jan van Schaik, Elbert Bechthum, Ming Ding, Arjan Breeschoten, Yao-Hong Liu
A 8mW-RX/113mW-TX, Sub-GHz SoC with time-dithered PA ramping for LPWAN applications. 376-379 - Bo Zhao, Yong Lian
A low-power compact IEEE 802.15.6 compatible human body communication transceiver with digital sigma-delta IIR mask shaping. 380-383
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