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"An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process ..."

Robert Giterman et al. (2017)

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DOI: 10.1109/ESSCIRC.2017.8094587

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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  - conf/esscirc/GitermanFGMBT17
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Robert Giterman, Alexander Fish, Narkis Geuli, Elad Mentovich, Andreas Burg, Adam Teman:
An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications. ESSCIRC 2017: 308-311

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