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Joo-Sun Choi
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2010 – 2019
- 2017
- [c22]Sang-uhn Cha, Seongil O, Hyunsung Shin, Sangjoon Hwang, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi, Gyo-Young Jin, Young Hoon Son, Hyunyoon Cho, Jung Ho Ahn
, Nam Sung Kim:
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices. HPCA 2017: 61-72 - 2015
- [j13]Tae-Young Oh, Hoeju Chung, Jun-Young Park, Ki-Won Lee, Seung-Hoon Oh, Su-Yeon Doo, Hyoung-Joo Kim, ChangYong Lee, Hye-Ran Kim, Jong-Ho Lee, Jin-Il Lee, Kyung-Soo Ha, Young-Ryeol Choi, Young-Chul Cho, Yong-Cheol Bae, Taeseong Jang, Chulsung Park, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi:
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation. IEEE J. Solid State Circuits 50(1): 178-190 (2015) - [c21]Yarui Peng
Design, packaging, and architectural policy co-optimization for DC power integrity in 3D DRAM. DAC 2015: 91:1-91:6 - [c20]Jongmi Lee, Youngwoo Ji, Seungnam Choi, Young-Chul Cho, Seong-Jin Jang, Joo-Sun Choi, Byungsub Kim, Hong-June Park, Jae-Yoon Sim:
5.7 A 29nW bandgap reference circuit. ISSCC 2015: 1-3 - [c19]Won-Joo Yun, Indal Song, Hanki Jeoung, Hundai Choi, Seok-Ho Lee, Jun-Bae Kim, Chi-Wook Kim, Jung-Hwan Choi, Seong-Jin Jang, Joo-Sun Choi:
17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs. ISSCC 2015: 1-3 - 2014
- [j12]Joung-Yeal Kim, Su-Jin Park, Kee-Won Kwon, Bai-Sun Kong, Joo-Sun Choi, Young-Hyun Jun:
CMOS Charge Pump With No Reversion Loss and Enhanced Drivability. IEEE Trans. Very Large Scale Integr. Syst. 22(6): 1441-1445 (2014) - [c18]Tae-Young Oh, Hoeju Chung, Young-Chul Cho, Jang-Woo Ryu, Kiwon Lee, Changyoung Lee, Jin-Il Lee, Hyoung-Joo Kim, Min-Soo Jang, Gong-Heum Han, Kihan Kim, Daesik Moon, Seung-Jun Bae, Joon-Young Park, Kyung-Soo Ha, Jaewoong Lee, Su-Yeon Doo, Jung-Bum Shin, Chang-Ho Shin, Kiseok Oh, Doo-Hee Hwang, Taeseong Jang, Chulsung Park, Kwang-Il Park, Jung-Bae Lee, Joo-Sun Choi:
25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation. ISSCC 2014: 430-431 - [c17]Reum Oh, Byunghyun Lee, Sang-Woong Shin, Wonil Bae, Hundai Choi, Indal Song, Yun-Sang Lee, Jung-Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Joo-Sun Choi:
Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. VLSIC 2014: 1-2 - 2013
- [j11]Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Seok-Hun Hyun, Hanki Jeoung, Ki Won Lee, Jun-Seok Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Byungchul Kim, Jung-Hwan Choi, Seong-Jin Jang, Chi-Wook Kim, Jung-Bae Lee, Joo-Sun Choi:
A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. IEEE J. Solid State Circuits 48(1): 168-177 (2013) - [c16]Ji-Hwan Seol, Young-Ju Kim, Sang-Hye Chung, Kyung-Soo Ha, Seung-Jun Bae, Jung-Bae Lee, Joo-Sun Choi, Lee-Sup Kim:
An 8Gb/s 0.65mW/Gb/s forwarded-clock receiver using an ILO with dual feedback loop and quadrature injection scheme. ISSCC 2013: 410-411 - [c15]Seung Mo Jung, Jong Hyun Seok, Ho Jin Yoo, Do Hyung Kim, You Keun Han, Woo-Seop Kim, Joo-Sun Choi, Jun Dong Cho
Noise immunity improvement in the RESET signal of DDR3 SDRAM memory module. SoCC 2013: 343-348 - 2012
- [j10]Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Joo-Sun Choi, Young-Hyun Jun:
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. IEEE J. Solid State Circuits 47(1): 107-116 (2012) - [c14]Joo-Sun Choi, Daisaburo Takashima:
Session 2 overview: High-bandwidth DRAM & PRAM: Memory subcommittee. ISSCC 2012: 36-37 - [c13]Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byungchul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh:
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme. ISSCC 2012: 38-40 - [c12]Yong-Cheol Bae, Joon-Young Park, Sang Jae Rhee, Seung-Bum Ko, Yonggwon Jeong, Kwang-Sook Noh, Young Hoon Son, Jaeyoun Youn, Yonggyu Chu, Hyunyoon Cho, Mijo Kim, Daesik Yim, Hyo-Chang Kim, Sang-Hoon Jung, Hye-In Choi, Sungmin Yim, Jung-Bae Lee, Joo-Sun Choi, Kyungseok Oh:
A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. ISSCC 2012: 44-46 - [c11]Young-Sik Kim, Seon-Kyoo Lee
An 8GB/s quad-skew-cancelling parallel transceiver in 90nm CMOS for high-speed DRAM interface. ISSCC 2012: 136-138 - 2011
- [j9]Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Satoru Yamada, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim:
An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs. IEICE Trans. Electron. 94-C(10): 1690-1697 (2011) - [j8]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. IEEE J. Solid State Circuits 46(1): 107-118 (2011) - [c10]Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun:
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. ISSCC 2011: 496-498 - [c9]Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. ISSCC 2011: 498-500 - 2010
- [j7]Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun:
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. IEEE J. Solid State Circuits 45(1): 111-119 (2010) - [j6]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Joo-Sun Choi, Kinam Kim:
Correction on "A 5-Gb/s/pin Transceiver for DDR Memory Interface With a Crosstalk Suppression Scheme" [Aug 09 2222-2232]. IEEE J. Solid State Circuits 45(2): 497 (2010) - [c8]Jun-Hyun Bae, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Jae-Yoon Sim, Hong-June Park:
A crosstalk-and-ISI equalizing receiver in 2-drop single-ended SSTL memory channel. CICC 2010: 1-4 - [c7]Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim:
A highly reliable multi-cell antifuse scheme using DRAM cell capacitors. ESSCIRC 2010: 482-485 - [c6]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction. ISSCC 2010: 434-435 - [c5]Pascal Urard, Ken Takeuchi, Kerry Bernstein, Hideto Hidaka, Michael Phan, Joo-Sun Choi, Bob Payne, Vladimir Stojanovic, Kees van Berkel, Takayasu Sakurai:
Silicon 3D-integration technology and systems. ISSCC 2010: 510-511
2000 – 2009
- 2009
- [j5]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Joo-Sun Choi, Kinam Kim:
A 5-Gb/s/pin Transceiver for DDR Memory Interface With a Crosstalk Suppression Scheme. IEEE J. Solid State Circuits 44(8): 2222-2232 (2009) - [j4]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 0.13-µm CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN. IEEE J. Solid State Circuits 44(11): 3146-3162 (2009) - [c4]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 6Gb/s/pin pseudo-differential signaling using common-mode noise rejection techniques without reference signal for DRAM interfaces. ISSCC 2009: 138-139 - 2008
- [j3]Seung-Jun Bae, Kwang-Il Park, Jeong-Don Ihm, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Yoon-Sik Park, Min-Sang Park, Hong-Kyong Lee, Sam-Young Bang, Gil-Shin Moon, Seokwon Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion. IEEE J. Solid State Circuits 43(1): 121-131 (2008) - [c3]Youn-Sik Park, Sung-Wook Lee, Bai-Sun Kong, Kwang-Il Park, Jeong-Don Ihm, Joo-Sun Choi, Young-Hyun Jun:
PVT-invariant single-to-differential data converter with minimum skew and duty-ratio distortion. ISCAS 2008: 1902-1905 - [c2]Seung-Jun Bae, Young-Soo Sohn, Kwang-Il Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jingook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. ISSCC 2008: 278-279 - 2007
- [j2]Kyu-Hyoun Kim
An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme. IEEE J. Solid State Circuits 42(1): 193-200 (2007) - 2006
- [c1]Kyu-Hyoun Kim
An 8Gb/s/pin 9.6ns Row-Cycle 288Mb Deca-Data Rate SDRAM with an I/O Error-Detection Scheme. ISSCC 2006: 527-536
1990 – 1999
- 1996
- [j1]Bai-Sun Kong, Joo-Sun Choi, Seog-Jun Lee, Kwyro Lee:
Charge recycling differential logic (CRDL) for low power application. IEEE J. Solid State Circuits 31(9): 1267-1276 (1996)
Coauthor Index
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