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Hye-In Choi

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2020 – today

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2024
[c5]
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  dblp key:
  - conf/isscc/ChoiHKHWKCLLJJHYLYLOLLKKPHNCLLSLRSPLB24
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  - https://dblp.org/rec/conf/isscc/ChoiHKHWKCLLJJHYLYLOLLKKPHNCLLSLRSPLB24
IkJoon Choi, Seunghwan Hong, Kihyun Kim, Jeongsik Hwang, Seunghan Woo, Young-Sang Kim, Cheongryong Cho, Eun-Young Lee, Hun-Jae Lee, Min-Su Jung, Hee-Yun Jung, Ju-Seong Hwang, Junsub Yoon, Wonmook Lim, Hyeong-Jin Yoo, Won-Ki Lee, Jung-Kyun Oh, Dong-Su Lee, Jong-Eun Lee, Jun-Hyung Kim, Young-Kwan Kim, Su-Jin Park, Byung-Kyu Ho, Byongwook Na, Hye-In Choi, Chung-Ki Lee, Soo-Jung Lee, Hyunsung Shin, Young-Kyu Lee, Jang-Woo Ryu, Sangwoong Shin, Sungchul Park, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, SangJoon Hwang:
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5^th-Generation 10nm DRAM Process. ISSCC 2024: 234-236
2021
[j1]
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Chang-Kyo Lee, Hyung-Joon Chi, Jin-Seok Heo, Junghwan Park, Jin-Hun Jang, Dongkeon Lee, Jaehoon Jung, Dong-Hun Lee, Dae-Hyun Kim, Kihan Kim, Sang-Yun Kim, Dukha Park, Youngil Lim, Geuntae Park, Seungjun Lee, Seungki Hong, Dae-Hyun Kwon, Isak Hwang, Byongwook Na, Kyungryun Kim, Seouk-Kyu Choi, Hye-In Choi, Hangi-Jung, Wonil Bae, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee:
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques. IEEE J. Solid State Circuits 56(1): 212-224 (2021)
[c4]
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Yong-Hun Kim, Hyung-Jin Kim, Jaemin Choi, Min-Su Ahn, Dongkeon Lee, Seung-Hyun Cho, Dong-Yeon Park, Young-Jae Park, Min-Soo Jang, Yong-Jun Kim, Jinyong Choi, Sung-Woo Yoon, Jae-Woo Jung, Jae-Koo Park, Jae-Woo Lee, Dae-Hyun Kwon, Hyung-Seok Cha, Si-Hyeong Cho, Seong-Hoon Kim, Jihwa You, Kyoung-Ho Kim, Dae-Hyun Kim, Byung-Cheol Kim, Young-Kwan Kim, Jun-Ho Kim, Seouk-Kyu Choi, Chanyoung Kim, Byongwook Na, Hye-In Choi, Reum Oh, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee:
25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3^rd-Generation 10nm DRAM. ISSCC 2021: 346-348
2020
[c3]
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Chi-Sung Oh, Ki Chul Chun, Young-Yong Byun, Yong-Ki Kim, So-Young Kim, Yesin Ryu, Jaewon Park, Sinho Kim, Sang-uhn Cha, Dong-Hak Shin, Jungyu Lee, Jong-Pil Son, Byung-Kyu Ho, Seong-Jin Cho, Beomyong Kil, Sungoh Ahn, Baekmin Lim, Yong-Sik Park, Kijun Lee, Myung-Kyu Lee, Seungduk Baek, Junyong Noh, Jae-Wook Lee, Seungseob Lee, Sooyoung Kim, Bo-Tak Lim, Seouk-Kyu Choi, Jin-Guk Kim, Hye-In Choi, Hyuk-Jun Kwon, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Kwang-Il Park, Jung-Bae Lee:
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme. ISSCC 2020: 330-332
[c2]
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Hyung-Joon Chi, Chang-Kyo Lee, Junghwan Park, Jin-Seok Heo, Jaehoon Jung, Dongkeon Lee, Dae-Hyun Kim, Dukha Park, Kihan Kim, Sang-Yun Kim, Jinsol Park, Hyunyoon Cho, Sukhyun Lim, YeonKyu Choi, Youngil Lim, Daesik Moon, Geuntae Park, Jin-Hun Jang, Kyungho Lee, Isak Hwang, Cheol Kim, Younghoon Son, Gil-Young Kang, Kiwon Park, Seungjun Lee, Su-Yeon Doo, Chang-Ho Shin, Byongwook Na, Ji-Suk Kwon, Kyung Ryun Kim, Hye-In Choi, Seouk-Kyu Choi, Soobong Chang, Wonil Bae, Hyuck-Joon Kwon, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee:
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. ISSCC 2020: 382-384

2010 – 2019

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2012
[c1]
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  - conf/isscc/BaePRKJNSYCCKYKJCYLCO12
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Yong-Cheol Bae, Joon-Young Park, Sang Jae Rhee, Seung-Bum Ko, Yonggwon Jeong, Kwang-Sook Noh, Young Hoon Son, Jaeyoun Youn, Yonggyu Chu, Hyunyoon Cho, Mijo Kim, Daesik Yim, Hyo-Chang Kim, Sang-Hoon Jung, Hye-In Choi, Sungmin Yim, Jung-Bae Lee, Joo-Sun Choi, Kyungseok Oh:
A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. ISSCC 2012: 44-46

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