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Dae-Hyun Kim 0003
Person information
- affiliation: Samsung Electronics, Hwaseong, Korea
- affiliation (PhD): Georgia Institute of Technology, Atlanta, GA, USA
Other persons with the same name
- Daehyun Kim (aka: Dae Hyun Kim, Dae-Hyun Kim) — disambiguation page
- Dae Hyun Kim 0004 (aka: Dae-Hyun Kim 0004, Daehyun Kim 0004) — Washington State University (WSU), School of Electrical Engineering and Computer Science, Pullman, WA, USA (and 1 more)
- Daehyun Kim 0005 (aka: Dae Hyun Kim 0005) — KAIST, Korea (and 1 more)
- Daehyun Kim 0006 (aka: Dae Hyun Kim 0006) — University of Illinois at Urbana-Champaign, Department of Aerospace Engineering, IL, USA
- Daehyun Kim 0001 — Intel Corporation, Santa Clara, CA, USA
- Daehyun Kim 0002 — Georgia Institute of Technology, GA, USA
- Daehyun Kim 0007 — UCLA, Department of Economics Los Angeles, CA, USA
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2020 – today
- 2022
- [c14]Dae-Hyun Kim, Byungkyu Song, Hyun-A. Ahn, Woongjoon Ko, Sung-Geun Do, Seokjin Cho, Kihan Kim, Seung-Hoon Oh, Hye-Yoon Joo, Geuntae Park, Jin-Hun Jang, Yong-Hun Kim, Donghun Lee, Jaehoon Jung, Yongmin Kwon, Youngjae Kim, Jaewoo Jung, Seongil O, Seoulmin Lee, Jaeseong Lim, Junho Son, Jisu Min, Haebin Do, Jaejun Yoon, Isak Hwang, Jinsol Park, Hong Shim, Seryeong Yoon, Dongyeong Choi, Jihoon Lee, Soohan Woo, Eunki Hong, Junha Choi, Jae-Sung Kim, Sangkeun Han, Jong-Min Bang, Bokgue Park, Jang-Hoo Kim, Seouk-Kyu Choi, Gong-Heum Han, Yoo-Chang Sung, Wonil Bae, Jeong-Don Lim, Seungjae Lee, Changsik Yoo, Sang Joon Hwang, Jooyoung Lee:
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. ISSCC 2022: 448-450 - 2021
- [j12]Chang-Kyo Lee, Hyung-Joon Chi, Jin-Seok Heo, Junghwan Park, Jin-Hun Jang, Dongkeon Lee, Jaehoon Jung, Dong-Hun Lee, Dae-Hyun Kim, Kihan Kim, Sang-Yun Kim, Dukha Park, Youngil Lim, Geuntae Park, Seungjun Lee, Seungki Hong, Dae-Hyun Kwon, Isak Hwang, Byongwook Na, Kyungryun Kim, Seouk-Kyu Choi, Hye-In Choi, Hangi-Jung, Wonil Bae, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee:
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques. IEEE J. Solid State Circuits 56(1): 212-224 (2021) - [c13]Yong-Hun Kim, Hyung-Jin Kim, Jaemin Choi, Min-Su Ahn, Dongkeon Lee, Seung-Hyun Cho, Dong-Yeon Park, Young-Jae Park, Min-Soo Jang, Yong-Jun Kim, Jinyong Choi, Sung-Woo Yoon, Jae-Woo Jung, Jae-Koo Park, Jae-Woo Lee, Dae-Hyun Kwon, Hyung-Seok Cha, Si-Hyeong Cho, Seong-Hoon Kim, Jihwa You, Kyoung-Ho Kim, Dae-Hyun Kim, Byung-Cheol Kim, Young-Kwan Kim, Jun-Ho Kim, Seouk-Kyu Choi, Chanyoung Kim, Byongwook Na, Hye-In Choi, Reum Oh, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee:
25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3rd-Generation 10nm DRAM. ISSCC 2021: 346-348 - 2020
- [c12]Hyung-Joon Chi, Chang-Kyo Lee, Junghwan Park, Jin-Seok Heo, Jaehoon Jung, Dongkeon Lee, Dae-Hyun Kim, Dukha Park, Kihan Kim, Sang-Yun Kim, Jinsol Park, Hyunyoon Cho, Sukhyun Lim, YeonKyu Choi, Youngil Lim, Daesik Moon, Geuntae Park, Jin-Hun Jang, Kyungho Lee, Isak Hwang, Cheol Kim, Younghoon Son, Gil-Young Kang, Kiwon Park, Seungjun Lee, Su-Yeon Doo, Chang-Ho Shin, Byongwook Na, Ji-Suk Kwon, Kyung Ryun Kim, Hye-In Choi, Seouk-Kyu Choi, Soobong Chang, Wonil Bae, Hyuck-Joon Kwon, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee:
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. ISSCC 2020: 382-384
2010 – 2019
- 2019
- [j11]Dae-Hyun Kim, Shu-Han Hsu, Linda Milor:
Optimization of Experimental Designs for System- Level Accelerated Life Test in a Memory System Degraded by Time-Dependent Dielectric Breakdown. IEEE Trans. Very Large Scale Integr. Syst. 27(7): 1640-1651 (2019) - [c11]Youngsok Kim, Joonsung Kim, Dongju Chae, Daehyun Kim, Jangwoo Kim:
μLayer: Low Latency On-Device Inference Using Cooperative Single-Layer Acceleration and Processor-Friendly Quantization. EuroSys 2019: 45:1-45:15 - 2018
- [c10]Amirali Boroumand, Saugata Ghose, Youngsok Kim, Rachata Ausavarungnirun, Eric Shiu, Rahul Thakur, Daehyun Kim, Aki Kuusela, Allan Knies, Parthasarathy Ranganathan, Onur Mutlu:
Google Workloads for Consumer Devices: Mitigating Data Movement Bottlenecks. ASPLOS 2018: 316-331 - [c9]Kexin Yang, Rui Zhang, Taizhi Liu, Dae Hyun Kim, Linda Milor:
Optimal Accelerated Test Regions for Time- Dependent Dielectric Breakdown Lifetime Parameters Estimation in FinFET Technology. DCIS 2018: 1-6 - 2017
- [b1]Dae-Hyun Kim:
Design methodologies for scalable and reliable memory systems. Georgia Institute of Technology, Atlanta, GA, USA, 2017 - [j10]Dae-Hyun Kim, Linda Milor:
Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life test. Microelectron. Reliab. 76-77: 47-52 (2017) - [j9]Kexin Yang, Taizhi Liu, Rui Zhang, Dae Hyun Kim, Linda Milor:
Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits. Microelectron. Reliab. 76-77: 81-86 (2017) - [j8]Dae-Hyun Kim, Linda Milor:
An ECC-Assisted Postpackage Repair Methodology in Main Memory Systems. IEEE Trans. Very Large Scale Integr. Syst. 25(7): 2045-2058 (2017) - [c8]Dae-Hyun Kim, Linda Milor:
A methodology for estimating memory lifetime using a system-level accelerated life test and error-correcting codes. VTS 2017: 1-6 - 2016
- [j7]Woongrae Kim, Chang-Chih Chen, Dae Hyun Kim, Linda Milor:
Built-In Self-Test Methodology With Statistical Analysis for Electrical Diagnosis of Wearout in a Static Random Access Memory Array. IEEE Trans. Very Large Scale Integr. Syst. 24(7): 2521-2534 (2016) - [c7]Dae Hyun Kim, Linda S. Milor:
ECC-ASPIRIN: An ECC-assisted post-package repair scheme for aging errors in DRAMs. VTS 2016: 1-6 - 2015
- [j6]Dae-Hyun Kim, Prashant J. Nair, Moinuddin K. Qureshi:
Architectural Support for Mitigating Row Hammering in DRAM Memories. IEEE Comput. Archit. Lett. 14(1): 9-12 (2015) - [j5]Dae Hyun Kim, Soonyoung Cha, Linda S. Milor:
AVERT: An elaborate model for simulating variable retention time in DRAMs. Microelectron. Reliab. 55(9-10): 1313-1319 (2015) - [j4]Soonyoung Cha, Dae Hyun Kim, Taizhi Liu, Linda S. Milor:
The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system. Microelectron. Reliab. 55(9-10): 1404-1411 (2015) - [j3]Dae Hyun Kim, Soonyoung Cha, Linda S. Milor:
Built-in self-test for bias temperature instability, hot-carrier injection, and gate oxide breakdown in embedded DRAMs. Microelectron. Reliab. 55(9-10): 2113-2118 (2015) - [c6]Moinuddin K. Qureshi, Dae-Hyun Kim, Samira Manabi Khan, Prashant J. Nair, Onur Mutlu:
AVATAR: A Variable-Retention-Time (VRT) Aware Refresh for DRAM Systems. DSN 2015: 427-437 - 2013
- [c5]Prashant J. Nair, Dae-Hyun Kim, Moinuddin K. Qureshi:
ArchShield: architectural framework for assisting DRAM scaling by tolerating high error rates. ISCA 2013: 72-83 - 2011
- [j2]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. IEEE J. Solid State Circuits 46(1): 107-118 (2011) - [c4]Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim, Sang-Hyup Kwak, Ho-Seok Seol, Chang-Ho Shin, Min-Sang Park, Gong-Heom Han, Byeong-Cheol Kim, Yong-Ki Cho, Hye-Ran Kim, Su-Yeon Doo, Young-Sik Kim, Dong-Seok Kang, Young-Ryeol Choi, Sam-Young Bang, Sun-Young Park, Yong-Jae Shin, Gil-Shin Moon, Cheol-Goo Park, Woo-Seop Kim, Hyang-Ja Yang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. ISSCC 2011: 498-500 - 2010
- [c3]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction. ISSCC 2010: 434-435
2000 – 2009
- 2008
- [j1]Seung-Jun Bae, Kwang-Il Park, Jeong-Don Ihm, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Yoon-Sik Park, Min-Sang Park, Hong-Kyong Lee, Sam-Young Bang, Gil-Shin Moon, Seokwon Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Sunghoon Kim, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim, Soo-In Cho:
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion. IEEE J. Solid State Circuits 43(1): 121-131 (2008) - [c2]Seung-Jun Bae, Young-Soo Sohn, Kwang-Il Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jingook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim, Hye-Ran Kim, Yong-Jae Shin, Cheol-Goo Park, Gil-Shin Moon, Ki-Woong Yeom, Kang-Young Kim, Jae-Young Lee, Hyang-Ja Yang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. ISSCC 2008: 278-279 - 2007
- [c1]Jeong-Don Ihm, Seung-Jun Bae, Kwang-Il Park, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Ho-Kyung Lee, Min-Sang Park, Sam-Young Bang, Mi-Jin Lee, Gil-Shin Moon, Young-Wook Jang, Suk-Won Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Su-Jin Park, Ok-Joo Park, Se-Mi Yang, Jin-Yong Choi, Young-Wook Kim, Hyun-Kyu Lee, Sunghoon Kim, Seong-Jin Jang, Young-Hyun Jun, Soo-In Cho:
An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion. ISSCC 2007: 492-617
Coauthor Index
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