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Dukha Park
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2020 – today
- 2021
- [j4]Chang-Kyo Lee
, Hyung-Joon Chi, Jin-Seok Heo, Junghwan Park, Jin-Hun Jang, Dongkeon Lee, Jaehoon Jung, Dong-Hun Lee, Dae-Hyun Kim
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques. IEEE J. Solid State Circuits 56(1): 212-224 (2021) - 2020
- [j3]Kyung-Soo Ha
A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM With Various High-Speed and Low-Power Techniques. IEEE J. Solid State Circuits 55(1): 157-166 (2020) - [c3]Hyung-Joon Chi, Chang-Kyo Lee, Junghwan Park, Jin-Seok Heo, Jaehoon Jung, Dongkeon Lee, Dae-Hyun Kim
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. ISSCC 2020: 382-384
2010 – 2019
- 2019
- [c2]Kyung-Soo Ha, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Jin-Hun Jang, Hyong-Ryol Hwang, Hyung-Joon Chi, Junghwan Park, Seungjun Shin, Dukha Park, Sang-Yun Kim, Sukhyun Lim, Kiwon Park, YeonKyu Choi, Young-Hwa Kim, Younghoon Son, Hyunyoon Cho, Byongwook Na, Hyo-Joo Ahn, Seungseob Lee, Seouk-Kyu Choi, Youn-Sik Park, Seok-Hun Hyun, Soobong Chang, Hyuck-Joon Kwon, Jung-Hwan Choi, Tae-Young Oh, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power. ISSCC 2019: 378-380 - 2010
- [j2]Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun:
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. IEEE J. Solid State Circuits 45(1): 111-119 (2010) - [j1]Ki-Whan Song, Jinyoung Kim, Jae-Man Yoon, Sua Kim, Huijung Kim, Hyun-Woo Chung, Hyungi Kim, Kanguk Kim, Hwan-Wook Park, Hyun Chul Kang, Nam-Kyun Tak, Dukha Park, Woo-Seop Kim, Yeong-Taek Lee, Yong Chul Oh, Gyo-Young Jin, Jei-Hwan Yoo, Donggun Park, Kyungseok Oh, Changhyun Kim, Young-Hyun Jun:
A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. IEEE J. Solid State Circuits 45(4): 880-888 (2010)
2000 – 2009
- 2006
- [c1]Kyu-Hyoun Kim
An 8Gb/s/pin 9.6ns Row-Cycle 288Mb Deca-Data Rate SDRAM with an I/O Error-Detection Scheme. ISSCC 2006: 527-536
Coauthor Index
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