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Dionyz Pogany
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- affiliation: TU Wien, Faculty of Electrical Engineering and Information Technology, Vienna, Austria
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2020 – today
- 2023
- [c3]D. Wieland, S. Ofner
, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. IRPS 2023: 1-6
2010 – 2019
- 2018
- [j34]Clemens Ostermaier, Peter Lagger, M. Reiner, Dionyz Pogany:
Review of bias-temperature instabilities at the III-N/dielectric interface. Microelectron. Reliab. 82: 62-83 (2018) - 2017
- [j33]Clément Fleury
TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. Microelectron. Reliab. 76-77: 698-702 (2017) - 2016
- [j32]Matteo Meneghini
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - 2015
- [j31]Matteo Rigato, Clément Fleury
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectron. Reliab. 55(9-10): 1471-1475 (2015) - [j30]Clément Fleury
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55(9-10): 1687-1691 (2015) - [c2]Mattia Capriotti, Clément Fleury
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63 - [c1]Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier:
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. IRPS 2015: 6 - 2013
- [j29]Clément Fleury
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013) - 2012
- [j28]J. Rhayem, B. Besbes, Raul Blecic, Sergey Bychikhin, Georg Haberfehlner
Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices. Microelectron. J. 43(9): 618-623 (2012) - [j27]Guido Notermans, Sergey Bychikhin, Dionyz Pogany, David Johnsson, Dejan M. Maksimovic:
HMM-TLP correlation for system-efficient ESD design. Microelectron. Reliab. 52(6): 1012-1019 (2012) - [j26]Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52(9-10): 1812-1815 (2012) - [j25]Paul Marko, Matteo Meneghini
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(9-10): 2194-2199 (2012) - 2011
- [j24]Dionyz Pogany, Sergey Bychikhin, Michael Heer, W. Mamanee, Erich Gornik
Application of transient interferometric mapping method for ESD and latch-up analysis. Microelectron. Reliab. 51(9-11): 1592-1596 (2011) - [j23]Helmut Köck
Improved thermal management of low voltage power devices with optimized bond wire positions. Microelectron. Reliab. 51(9-11): 1913-1918 (2011) - 2010
- [j22]A. Podgaynaya, Ralf Rudolf, B. Elattari, Dionyz Pogany, Erich Gornik
Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization. Microelectron. Reliab. 50(9-11): 1347-1351 (2010) - [j21]Sergey Bychikhin, Georg Haberfehlner
Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. Microelectron. Reliab. 50(9-11): 1427-1430 (2010)
2000 – 2009
- 2009
- [j20]Helmut Köck
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. Microelectron. Reliab. 49(9-11): 1132-1136 (2009) - [j19]Georg Haberfehlner
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. Microelectron. Reliab. 49(9-11): 1346-1351 (2009) - [j18]Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. Microelectron. Reliab. 49(12): 1455-1464 (2009) - 2008
- [j17]Michael Heer, P. Grombach, A. Heid, Dionyz Pogany:
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. Microelectron. Reliab. 48(8-9): 1525-1528 (2008) - 2007
- [j16]Karol Cico, Ján Kuzmík, Dagmar Gregusová
Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. Microelectron. Reliab. 47(4-5): 790-793 (2007) - [j15]Michael Heer, Sergey Bychikhin, W. Mamanee, Dionyz Pogany, A. Heid, P. Grombach, M. Klaussner, Winfried Soppa, Bernd Ramler:
Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. Microelectron. Reliab. 47(9-11): 1450-1455 (2007) - [j14]Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Backside interferometric methods for localization of ESD-induced leakage current and metal shorts. Microelectron. Reliab. 47(9-11): 1539-1544 (2007) - [j13]Sergey Bychikhin, T. Swietlik, Tadeusz Suski
Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping. Microelectron. Reliab. 47(9-11): 1649-1652 (2007) - 2006
- [j12]Michael Heer, Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. Microelectron. Reliab. 46(9-11): 1591-1596 (2006) - 2005
- [j11]Michael Heer, Viktor Dubec, M. Blaho, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Automated setup for thermal imaging and electrical degradation study of power DMOS devices. Microelectron. Reliab. 45(9-11): 1688-1693 (2005) - [j10]Martin Litzenberger, Christoph Furböck, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices. IEEE Trans. Instrum. Meas. 54(6): 2438-2445 (2005) - 2004
- [j9]Sergey Bychikhin, Viktor Dubec, Dionyz Pogany, Erich Gornik
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress. Microelectron. Reliab. 44(9-11): 1687-1692 (2004) - [j8]Viktor Dubec, Sergey Bychikhin, M. Blaho, Michael Heer, Dionyz Pogany, Marie Denison, Nils Jensen, Matthias Stecher, Gerhard Groos, Erich Gornik
Multiple-time-instant 2D thermal mapping during a single ESD event. Microelectron. Reliab. 44(9-11): 1793-1798 (2004) - 2003
- [j7]M. Blaho, Dionyz Pogany, Erich Gornik
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. Microelectron. Reliab. 43(4): 545-548 (2003) - [j6]Viktor Dubec, Sergey Bychikhin, M. Blaho, Dionyz Pogany, Erich Gornik
A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress. Microelectron. Reliab. 43(9-11): 1557-1561 (2003) - 2002
- [j5]Wolfgang Stadler, Kai Esmark, Harald Gossner
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. 42(9-11): 1267-1274 (2002) - [j4]M. Blaho, Dionyz Pogany, L. Zullino, A. Andreini, Erich Gornik
Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions. Microelectron. Reliab. 42(9-11): 1281-1286 (2002) - [j3]Dionyz Pogany, Ján Kuzmík, J. Darmo
Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Microelectron. Reliab. 42(9-11): 1673-1677 (2002) - 2001
- [j2]Martin Litzenberger, R. Pichler, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. Microelectron. Reliab. 41(9-10): 1385-1390 (2001) - [j1]Sergey Bychikhin, Martin Litzenberger, R. Pichler, Dionyz Pogany, Erich Gornik
Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures. Microelectron. Reliab. 41(9-10): 1501-1506 (2001)
Coauthor Index
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