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Kai Esmark
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2000 – 2009
- 2009
- [j14]Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner
, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix
Reliability aspects of gate oxide under ESD pulse stress. Microelectron. Reliab. 49(12): 1407-1416 (2009) - [j13]David Alvarez, Kiran V. Chatty, Christian Russ, Michel J. Abou-Khalil, Junjun Li, Robert Gauthier, Kai Esmark, Ralph Halbach, Christopher Seguin:
Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. Microelectron. Reliab. 49(12): 1417-1423 (2009) - [j12]Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. Microelectron. Reliab. 49(12): 1455-1464 (2009) - [j11]Tilo Brodbeck, Kai Esmark, Wolfgang Stadler:
CDM tests on interface test chips for the verification of ESD protection concepts. Microelectron. Reliab. 49(12): 1470-1475 (2009) - 2007
- [j10]Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Domanski, Mauro Ciappa, Wolfgang Fichtner:
SCR operation mode of diode strings for ESD protection. Microelectron. Reliab. 47(7): 1044-1053 (2007) - 2005
- [j9]Wolfgang Stadler, Kai Esmark, K. Reynders, M. Zubeidat, Michael Graf, Wolfgang Wilkening, J. Willemen, Ning Qu, S. Mettler, M. Etherton:
Test circuits for fast and reliable assessment of CDM robustness of I/O stages. Microelectron. Reliab. 45(2): 269-277 (2005) - [j8]S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser
Transient latch-up: experimental analysis and device simulation. Microelectron. Reliab. 45(2): 297-304 (2005) - [j7]Martin Streibl, Franz Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner
High abstraction level permutational ESD concept analysis. Microelectron. Reliab. 45(2): 313-321 (2005) - 2003
- [j6]Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. Microelectron. Reliab. 43(7): 1001-1010 (2003) - 2002
- [j5]Wolfgang Stadler, Kai Esmark, Harald Gossner
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. 42(9-11): 1267-1274 (2002) - [j4]Franz Zängl, Harald Gossner
Case study of a technology transfer causing ESD problems. Microelectron. Reliab. 42(9-11): 1275-1280 (2002) - 2001
- [j3]Harald Gossner
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. Microelectron. Reliab. 41(3): 385-393 (2001) - [j2]Martin Litzenberger, R. Pichler, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. Microelectron. Reliab. 41(9-10): 1385-1390 (2001) - [j1]Kai Esmark, Wolfgang Stadler, M. Wendel, Harald Gossner
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. Microelectron. Reliab. 41(11): 1761-1770 (2001)
Coauthor Index
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