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Eldad Bahat-Treidel
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2020 – today
- 2023
- [c4]Manuel Fregolent
, Alberto Marcuzzi, Carlo De Santi
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS 2023: 1-5 - 2021
- [c3]Oliver Hilt
GaN-channel HEMTs with AlN buffer for high-voltage switching. DRC 2021: 1-2 - 2020
- [c2]Eldad Bahat-Treidel
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC 2020: 1-2
2010 – 2019
- 2016
- [j7]Matteo Meneghini
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - [j6]Eldad Bahat-Treidel, Oliver Hilt
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64: 556-559 (2016) - 2015
- [c1]Mattia Capriotti, Clément Fleury
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63 - 2014
- [j5]Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl:
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54(9-10): 2191-2195 (2014) - 2012
- [j4]Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012) - 2011
- [j3]Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51(2): 217-223 (2011) - [j2]Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51(9-11): 1710-1716 (2011)
2000 – 2009
- 2009
- [j1]Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49(9-11): 1211-1215 (2009)
Coauthor Index
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