PD - 91581A

IRG4PC50S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package
C

Standard Speed IGBT

VCES = 600V
G E

VCE(on) typ. = 1.28V

@VGE = 15V, IC = 41A

n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.

Max.
600 70 41 140 140 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm)

Units
V A

V mJ W

Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight

Typ.
0.24 6.0 (0.21)

Max.
0.64 40

Units
C/W g (oz)

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2/7/2000

IRG4PC50S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ

VCE(ON) VGE(th) VGE(th)/TJ gfe ICES

IGES

Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage T 18 Temperature Coeff. of Breakdown Voltage 0.75 1.28 Collector-to-Emitter Saturation Voltage 1.62 1.28 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -9.3 Forward Transconductance U 17 34 Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current

Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA 1.36 IC = 41A VGE = 15V IC = 80A See Fig.2, 5 V IC = 41A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 41A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 180 24 61 33 30 650 400 0.72 8.27 8.99 31 31 1080 620 15 13 4100 250 48 Max. Units Conditions 280 IC = 41A 37 nC VCC = 400V See Fig. 8 92 VGE = 15V TJ = 25C ns 980 IC = 41A, VCC = 480V 600 VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 9, 10, 14 13 TJ = 150C, IC = 41A, VCC = 480V ns VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 11, 14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0,

(See fig. 13a)

T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4PC50S
100 F o r b o th :

T ria n g u la r wa v e :
I

80

D uty cy c le: 50% T J = 125 C T s ink = 90 C Ga te drive as s pec ified

Load Current ( A )

P o w e r D i ss i p a tio n = 4 0 W

C la m p v o lta g e : 8 0 % o f ra te d

60 S q u are wa ve: 6 0 % o f ra te d vo lt a g e 40
I

20 Id e a l di o de s

0 0.1 1 10

A
100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000

1000

100

I C , Collector-to-Emitter Current (A)

I C , Collector-to-Emitter Current (A)

100

TJ = 150 o C 

10

10

TJ =  150 o C

TJ = 25 o C  V = 15V  20s PULSE WIDTH

GE 1 10

TJ = 25 oC  V = 50V  5s PULSE WIDTH

CC 5 6 7 8 9 10

1 0.1

VCE , Collector-to-Emitter Voltage (V)

VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRG4PC50S
80 L IM IT E D B Y P A C K A G E

V G E = 15 V

2.2

VCE , Collector-to-Emitter Voltage(V)

M axim um D C C ollector C urrent (A)

V = 15V  80 us PULSE WIDTH

GE

2.0

 I C = 82 A

60

1.8

1.6

40

1.4

 I C = 41 A  I C =20.5 A

20

1.2

1.0

0 25 50 75 100 125 150

0.8 -60 -40 -20

20

40

60

80 100 120 140 160

T C , C ase Tem perature ( C)

TJ , Junction Temperature ( C)

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature

Thermal Response (Z thJC )

0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE)

0.01

0.001 0.00001


Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01


P DM t1 t2 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC50S
8000

VGE , Gate-to-Emitter Voltage (V)

C, Capacitance (pF)

6000


VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc

20


VCC = 400V I C = 41A

16

Cies 
4000

12

2000

C oes Cres 

0 1 10 100

0 0 40 80 120 160 200

VCE , Collector-to-Emitter Voltage (V)

QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage

10.0

Total Switching Losses (mJ)

9.5

Total Switching Losses (mJ)

V CC = 480V V GE = 15V TJ = 25 C I C = 41A

100


5.0 RG = Ohm VGE = 15V VCC = 480V

 IC = 82 A  IC = 41 A

10

 IC = 20.5 A

9.0

8.5 0 10 20 30 40 50

1 -60 -40 -20

20

40

60

80 100 120 140 160

R ( (Ohm) ) R Gate Resistance Resistance G , Gate G

TJ , Junction Temperature ( C )

Fig. 9 - Typical Switching Losses vs. Gate Resistance

Fig. 10 - Typical Switching Losses vs. Junction Temperature

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IRG4PC50S
40

30

20

I C , Collector-to-Emitter Current (A)

Total Switching Losses (mJ)


RG TJ VCC VGE

5.0 = Ohm = 150 C = 480V = 15V

1000


VGE = 20V T J = 125 oC

100

10

10

0 0 20 40 60 80

SAFE OPERATING AREA

1 100 1 10 100 1000

I C , Collector-to-emitter Current (A)

VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

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IRG4PC50S
L 50V 1 00 0V VC *
0 - 480V

D .U .T.
RL = 480V 4 X I C@25C

480F 960V R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive

Load Test Circuit

Fig. 13b - Pulsed Collector

Current Test Circuit

IC L D river* 50V 1000V Q R S

* Driver same type as D.U.T., VC = 480V

D .U .T. VC

Fig. 14a - Switching Loss

Test Circuit

90 %
S

10 % 90 %

VC

t d (o ff)

Fig. 14b - Switching Loss

Waveforms

1 0% IC 5% t d (o n )

tr Eon E ts = (E o n +E o ff )

tf t=5 s E o ff

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IRG4PC50S

Case Outline and Dimensions TO-247AC

3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7)
-D-

1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-

5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4

N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C .

2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1

2X

5 .5 0 (.2 17 ) 4 .5 0 (.1 77 )

3
-C-

LEAD 1234-

A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R

14 .80 (.583 ) 14 .20 (.559 )

4.30 (.1 70) 3.70 (.1 45)

0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )

2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 )

L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER

3X

1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M

C A S

2X

3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00

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