Advanced Power Electronics Corp.: AP15N03H/J

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

! ! ! ! Low Gate Charge BV
DSS
30V
! ! ! ! Simple Drive Requirement R
DS(ON)
80m"
! ! ! ! Fast Switching I
D
15A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25# A
I
D
@T
C
=100# A
I
DM
A
P
D
@T
C
=25# W
W/#
T
STG
#
T
J
#
Symbol Value Unit
Rthj-case Thermal Resistance J unction-case Max. 4.8 #/W
Rthj-amb Thermal Resistance J unction-ambient Max. 110 #/W
Data & specifications subject to change without notice 200227032
Thermal Data
Parameter
Pulsed Drain Current
1
50
Operating J unction Temperature Range -55 to 150
Linear Derating Factor 0.22
Storage Temperature Range
Total Power Dissipation 28
-55 to 150
Continuous Drain Current, V
GS
@ 10V 15
Continuous Drain Current, V
GS
@ 10V 9
Drain-Source Voltage 30
Gate-Source Voltage
AP15N03H/J
Parameter Rating
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03J ) is available for low-profile applications.
20
G
D
S
TO-251(J)
G
D
S
TO-252(H)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA 30 - - V
$BV
DSS
/$T
j
Breakdown Voltage Temperature Coefficient Reference to 25#, I
D
=1mA - 0.037 - V/#
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=10V, I
D
=8A - - 80 m"
V
GS
=4.5V, I
D
=6A - - 100 m"
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250uA 1 - 3 V
g
fs
Forward Transconductance V
DS
=10V, I
D
=18A - 16 - S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V ` - 1
uA
Drain-Source Leakage Current (T
j
=150
o
C) V
DS
=24V, V
GS
=0V - - 25 uA
I
GSS Gate-Source Leakage V
GS
= - - nA
Q
g
Total Gate Charge
2
I
D
=8A - 4.6 nC
Q
gs
Gate-Source Charge V
DS
=24V - 1.1 nC
Q
gd
Gate-Drain ("Miller") Charge V
GS
=5V - 3 nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V - 4.9 - ns
t
r
Rise Time I
D
=8A - 22.5 - ns
t
d(off)
Turn-off Delay Time R
G
=3.4",V
GS
=10V - 12.2 - ns
t
f
Fall Time R
D
=1.9" - 3.3 -
ns
C
iss
Input Capacitance V
GS
=0V - 160 - pF
C
oss
Output Capacitance V
DS
=25V - 107 - pF
C
rss
Reverse Transfer Capacitance f=1.0MHz - 32 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode ) V
D
=V
G
=0V , V
S
=1.3V - - 15 A
I
SM
Pulsed Source Current ( Body Diode )
1
- - 50 A
V
SD
Forward On Voltage
2
T
j
=25#, I
S
=15A, V
GS
=0V - - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP15N03H/J
100 20V
AP15N03H/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
50
60
70
80
90
2 3 4 5 6 7 8 9 10 11
V
GS
(V)
R
D
S
(
O
N
)

(
m
" "" "
)
I
D
=8A
T
C
=25
o
C
0
10
20
30
40
0 1 2 3 4 5 6 7
V
DS
, Drain-to-Source Voltage (V)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
T
C
=150
o
C
V
G
=4.0V
V
G
=6.0V
V
G
=8.0V
V
G
=10V
0
10
20
30
40
50
0 1 2 3 4 5 6 7
V
DS
, Drain-to-Source Voltage (V)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
T
C
=25
o
C
V
G
=4.0V
V
G
=6.0V
V
G
=8.0V
V
G
=10V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
T
j
, Junction Temperature (
o
C)
N
o
r
m
a
l
i
z
e
d

R
D
S
(
O
N
)
V
G
=10V
I
D
=8A
AP15N03H/J
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
0
10
20
30
40
0 50 100 150
T
c ,
Case Temperature (
o
C)
P
D

(
W
)
0
5
10
15
20
25 50 75 100 125 150
T
c
, Case Temperature (
o
C)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
1
10
100
1 10 100
V
DS
(V)
I
D

(
A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
N
o
r
m
a
l
i
z
e
d

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

(
R
t
h
j
c
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
AP15N03H/J
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
1
2
3
-50 0 50 100 150
T
j
, Junction Temperature(
o
C)
V
G
S
(
t
h
)

(
V
)
0.1
1
10
100
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
SD
(V)
I
S

(
A
)
T
j
=25
o
C
T
j
=150
o
C
0
2
4
6
8
10
12
14
16
0 1 2 3 4 5 6 7 8 9 10
Q
G
, Total Gate Charge (nC)
V
G
S

,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
V
DS
=16V
V
DS
=20V
V
DS
=24V
I
D
=8A
10
100
1000
1 6 11 16 21 26 31
V
DS
(V)
C

(
p
F
)
f=1.0MHz
Ciss
Coss
Crss
AP15N03H/J
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
t
d(on)
t
r t
d(off) t
f
V
DS
V
GS
10%
90%
Q
V
G
5V
Q
GS
Q
GD
Q
G
Charge
0.5x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10V
D
G
S
V
DS
V
GS
R
G
R
D
0.8 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~3 mA

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Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

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