QM3018M6

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The QM3018M6 is the highest performance trench

N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID
which provide excellent RDSON and gate charge
30V 3mΩ 163A
for most of the synchronous buck converter
applications .
Applications
The QM3018M6 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with z High Frequency Point-of-Load Synchronous
full function reliability approved. Buck Converter
z Networking DC-DC Power System
Features z Power Tool Application

z Advanced high cell density Trench technology PRPAK56 Pin Configuration

z Super Low Gate Charge
z Excellent CdV/dt effect decline D
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings

S SS G
Rating
Symbol Parameter 10s Steady State Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1,7
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 163 A
1,7
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 103 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 33.5 21 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 27 17 A
2
IDM Pulsed Drain Current 325 A
3
EAS Single Pulse Avalanche Energy 378 mJ
IAS Avalanche Current 70.2 A
4
PD@TC=25℃ Total Power Dissipation 119 W
4
PD@TA=25℃ Total Power Dissipation 5 2 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W
RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 1.05 ℃/W

Rev A.03 D102111

1
 QM3018M6
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.022 --- V/℃
VGS=10V , ID=30A --- 2.4 3
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=15A 3.2 4
VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -6.1 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 60 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.9 1.8 Ω
Qg Total Gate Charge (4.5V) --- 56 78
Qgs Gate-Source Charge VDS=15V , VGS=10V , ID=15A --- 18 25 nC
Qgd Gate-Drain Charge --- 21 29
Td(on) Turn-On Delay Time --- 22 44
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω, --- 43.6 78
ns
Td(off) Turn-Off Delay Time ID=15A --- 100 200
Tf Fall Time --- 33.6 67.2
Ciss Input Capacitance --- 5935 8309
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 725 1015 pF
Crss Reverse Transfer Capacitance --- 538 753

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A 69 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 163 A
2,6
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 325 A
2
VSD Diode Forward Voltage VGS=0V , IS=A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time --- 25 --- nS
Qrr Reverse Recovery Charge IF=15A , dI/dt=100A/µs , TJ=25℃ --- 14 --- nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=70.2A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 85A.

2
 QM3018M6
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
4.00
ID=12A

3.75

3.50

RDSON (mΩ)
3.25

3.00

2.75
4 6 8 10
VGS (V)

Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source

12

10
IS Source Current(A)

6
TJ=150℃ TJ=25℃

0
0.2 0.4 0.6 0.8 1
VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

2.0
1.5
Normalized On Resistance
Normalized VGS(th)

1.5
1

1.0
0.5

0 0.5
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature ( ℃) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ

3
 QM3018M6
N-Ch 30V Fast Switching MOSFETs
100000

10000 Ciss
Capacitance (pF)

1000 Coss

Crss

100

F=1.0MHz
10
1 5 9 13 17 21 25
VDS , Drain to Source Voltage(V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.3

0.1 0.1

0.05 PDM
TON
T
0.02 D = TON/T

0.01 SINGLE PULSE TJpeak = TC + PDM x RθJC

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform