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    MDD 1051 RH

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    9826sleepy

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    © All Rights Reserved
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    MDD 1051 RH

    Uploaded by

    9826sleepy
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    mdd1051rh (1)

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    MDD 1051 RH

    Uploaded by

    9826sleepy

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    © All Rights Reserved
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    MDD1051– Single N-Channel Trench MOSFET 150V

    MDD1051
    Single N-channel Trench MOSFET 150V, 28A, 46mΩ

    General Description Features


    The MDD1051 uses advanced MagnaChip’s MOSFET  VDS = 150V
    Technology, which provides high performance in on-state
     ID = 28A @VGS = 10V
    resistance, fast switching performance and excellent
    quality. MDD1051 is suitable device for Synchronous  RDS(ON)
    Rectification For Server and general purpose applications. < 46.0 mΩ @VGS = 10V
     100% UIL Tested
     100% Rg Tested

    Absolute Maximum Ratings (Ta = 25oC)


    Characteristics Symbol Rating Unit

    Drain-Source Voltage VDSS 150 V

    Gate-Source Voltage VGSS ±20 V


    o
    TC=25 C (Silicon Limited) 28
    Continuous Drain Current (1) ID
    o
    TC=100 C 18 A

    Pulsed Drain Current IDM 110


    o
    TC=25 C 70
    Power Dissipation PD W
    TC=100oC 28

    Single Pulse Avalanche Energy (2) EAS 40.5 mJ


    o
    Junction and Storage Temperature Range TJ, Tstg -55~150 C

    Thermal Characteristics
    Characteristics Symbol Rating Unit
    (1)
    Thermal Resistance, Junction-to-Ambient RθJA 50 o
    C/W
    Thermal Resistance, Junction-to-Case RθJC 1.8

    June. 2014. Version 1.0 1 MagnaChip Semiconductor Ltd.


    MDD1051– Single N-Channel Trench MOSFET 150V
    Ordering Information
    Part Number Temp. Range Package Packing RoHS Status
    MDD1051RH -55~150oC D-PAK Tape & Reel Halogen Free

    Electrical Characteristics (TJ =25oC)


    Characteristics Symbol Test Condition Min Typ Max Unit

    Static Characteristics
    Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 150 - -
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.2 2.2 3.2
    Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1.0
    μA
    Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
    Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 37.0 46.0 mΩ
    Forward Transconductance gfs VDS = 10V, ID = 20A - 30 - S
    Dynamic Characteristics
    Total Gate Charge Qg - 19.6 -
    VDS = 75V, ID = 20A,
    Gate-Source Charge Qgs - 5.2 - nC
    VGS = 10V
    Gate-Drain Charge Qgd - 5.2 -
    Input Capacitance Ciss - 1270 -
    VDS = 40V, VGS = 0V,
    Reverse Transfer Capacitance Crss - 40 - pF
    f = 1.0MHz
    Output Capacitance Coss - 405 -
    Turn-On Delay Time td(on) - 15 -
    Rise Time tr VGS = 10V, VDS = 75V, - 10 -
    ns
    Turn-Off Delay Time td(off) ID = 20A , RG = 3.0Ω - 20 -
    Fall Time tf - 5 -
    Gate Resistance Rg f=1 MHz - 1.8 - Ω
    Drain-Source Body Diode Characteristics
    Source-Drain Diode Forward Voltage VSD IS = 20A, VGS = 0V - 0.9 1.3 V
    Body Diode Reverse Recovery Time trr - 73 ns
    IF = 20A, dl/dt = 100A/μs
    Body Diode Reverse Recovery Charge Qrr - 245 nC

    Note :

    1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
    2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 9.0A, VGS = 10V.

    June. 2014. Version 1.0 2 MagnaChip Semiconductor Ltd.


    MDD1051– Single N-Channel Trench MOSFET 150V
    Package Dimension

    2 Leads, DPAK (TO-252)

    Dimensions are in millimeters unless otherwise specified

    June. 2014. Version 1.0 3 MagnaChip Semiconductor Ltd.


    MDD1051– Single N-Channel Trench MOSFET 150V

    DISCLAIMER:

    The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
    generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
    expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
    applications do so at their own risk and agree to fully defend and indemnify Seller.

    MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
    for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
    Semiconductor Ltd.

    June. 2014. Version 1.0 4 MagnaChip Semiconductor Ltd.

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