General Description Product Summary: Bvdss Rdson ID
General Description Product Summary: Bvdss Rdson ID
General Description Product Summary: Bvdss Rdson ID
Thermal Data
1
QM3004M3
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
QM3004M3
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
100
75
ID Drain Current (A)
VGS=10V
VGS=7V
VGS=5V
50
VGS=4.5V
VGS=3V
25
0
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)
10
8
VGS , Gate to Source Voltage (V)
IS -Source Current(A)
8
6 VDS=15V
TJ=150℃ TJ=25℃
6 VDS=24V
4
4
2 2
0
0
0 0.3 0.6 0.9
0 6 12 18 24 30
VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC)
1.8 1.8
Normalized On Resistance
1.4 1.4
Normalized VGS(th)
1 1.0
0.6 0.6
0.2 0.2
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)
3
QM3004M3
N-Ch 30V Fast Switching MOSFETs
10000 1000
F=1.0MHz
1000
100us
ID (A)
10
Coss
100 10ms
Crss 100ms
1
DC
TC=25℃
Single Pulse
10 0
1 5 9 13 17 21 25 0.1 1 10 100
VDS , Drain to Source Voltage (V) VDS (V)
DUTY=0.5
0.3
0.1
0.1
0.05
PDM
0.02 TON
0.01 T
D = TON/T
SINGLE PULSE TJpeak = TC + PDM x RθJC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance