KR20020018676A - 도금용 공통 전극선 - Google Patents
도금용 공통 전극선 Download PDFInfo
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- KR20020018676A KR20020018676A KR1020017015362A KR20017015362A KR20020018676A KR 20020018676 A KR20020018676 A KR 20020018676A KR 1020017015362 A KR1020017015362 A KR 1020017015362A KR 20017015362 A KR20017015362 A KR 20017015362A KR 20020018676 A KR20020018676 A KR 20020018676A
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- common electrode
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- 238000007747 plating Methods 0.000 title claims abstract description 129
- 239000004020 conductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
- H05K3/242—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus characterised by using temporary conductors on the printed circuit for electrically connecting areas which are to be electroplated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0228—Cutting, sawing, milling or shearing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1572—Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49158—Manufacturing circuit on or in base with molding of insulated base
- Y10T29/4916—Simultaneous circuit manufacturing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating Methods And Accessories (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Claims (16)
- 주기판에 복수개의 회로 기판의 도체 패턴을 일괄해서 형성하고, 도금용 공통 전극선을 통하여 상기 복수개의 회로 기판의 도체 패턴을 동시에 도금하는 주기판의 도금용 공통 전극선에서,상기 복수개의 회로 기판의 도체 패턴에 각각 접속되는 상기 도금용 공통 전극선이,상기 주기판의 표리 양면에 스루홀을 통하여 접속 형성되고, 또한 표리 양면 어느 쪽에나 상기 복수개의 회로 기판으로 분할하기 위한 절단선을 지나서 인접하는 회로 기판으로부터 배선되어 있는도금용 공통 전극선.
- 제1항에서,상기 주기판의 표면 및/또는 이면에 형성되고, 상기 회로 기판의 스루홀 끼리 접속시키는 상기 도금용 공통 전극선이,상기 절단선을 지나서 인접하는 회로 기판으로부터 배선되어 있는도금용 공통 전극선.
- 제1항 또는 제2항에서,상기 도금용 공통 전극선이, 상기 절단선을 따라 구불구불하게 형성되어 있는 도금용 공통 전극선.
- 제1항 내지 제3항 중 어느 한 항에서,서로 인접하는 2개의 회로 기판에, 합계 n개의 스루홀이 형성되어 있는 경우에,1번째부터 n번째까지의 스루홀을 임의로 조합하여 각각 접속시키는 상기 도금용 공통 전극선을, 상기 절단선을 지나서 인접하는 회로 기판을 통하여 배선하는 동시에, 이 중 적어도 하나의 도금용 공통 전극선을 기판 이면에 형성한도금용 공통 전극선.
- 제4항에서,하나의 회로 기판에 홀수번째의 스루홀이 형성되고, 다른 회로 기판에 짝수번째의 스루홀이 형성되어 있는 경우에,홀수번째의 스루홀과 짝수번째의 스루홀을 접속시키는 상기 도금용 공통 전극선을 기판 표면에 형성하고, 짝수번째의 스루홀과 홀수번째의 스루홀을 접속시키는 상기 도금용 전극선을 기판 이면에 형성한도금용 공통 전극선.
- 제1항 내지 제5항 중 어느 한 항에서,상기 도금용 공통 전극선이, 분기되어 형성된 다른 도금용 공통 전극선을 가지는 도금용 공통 전극선.
- 제1항 내지 제5항 중 어느 한 항에서,상기 도금용 공통 전극선이, 상기 스루홀로부터 분기되어 형성된 다른 도금용 공통 전극선을 가지는 도금용 공통 전극선.
- 제6항 또는 제7항에서,상기 다른 도금용 공통 전극선이, 상기 절단선을 지나서 구불구불하게 형성되어 있는 도금용 공통 전극선.
- 제6항 내지 제8항 중 어느 한 항에서,상기 다른 도금용 공통 전극선이, 상기 도금용 공통 전극선의 형성면과 반대측 면에 형성되어 있는 도금용 공통 전극선.
- 제6항 내지 제9항 중 어느 한 항에서,상기 다른 도금용 공통 전극선이, 상기 스루홀을 통하여 상기 회로 기판의 표리면에 형성한 상기 도체 패턴과 접속되어 있는 도금용 공통 전극선.
- 제6항 내지 제10항 중 어느 한 항에서,상기 다른 도금용 공통 전극선이, 상기 절단선을 사이에 끼고 배치된 스루홀을 접속시키고 있는 도금용 공통 전극선.
- 제6항 내지 제11항 중 어느 한 항에서,서로 인접하는 2개의 회로 기판에서의 스루홀을 교대로 연속하여 접속하기 위한 상기 도금용 공통 전극선을 본선으로서 상기 기판 표면에 형성하고, 상기 본선으로부터 분기되어 특정한 패드와 접속하는 다른 도금용 공통 전극선을 지선으로서 상기 기판 이면에 형성한 도금용 공통 전극선.
- 제6항 내지 제11항 중 어느 한 항에서,서로 인접하는 2개의 회로 기판에서의 스루홀을 교대로 연속하여 접속하기 위한 상기 도금용 공통 전극선을 본선으로서 상기 기판 이면에 형성하고, 상기 스루홀로부터 특정한 스루홀과 접속하기 위한 상기 다른 도금용 공통 전극선을 지선으로서 상기 기판 표면에 형성한 도금용 공통 전극선.
- 제6항 내지 제11항 중 어느 한 항에서,서로 인접하는 2개의 회로 기판에서의 스루홀을 교대로 연속하여 접속하기 위한 상기 도금용 공통 전극선을 본선으로서 상기 기판의 표면 또는 이면에 임의로 형성하고, 상기 스루홀로부터 특정한 스루홀과 접속하기 위한 상기 다른 도금용 공통 전극선을 지선으로서 상기 본선이 형성된 기판의 반대측 면에 형성한 도금용 공통 전극선.
- 제1항 내지 제14항 중 어느 한 항에서,하나의 회로 기판에서 2이상의 패드 또는 스루홀을 접속시키는 상기 도금용 공통 전극선이,상기 절단선을 지나서 인접하는 회로 기판을 우회하여 형성되어 있는 도금용 공통 전극선.
- 제1항 내지 제14항 중 어느 한 항에서,상기 회로 기판의 표면에 형성한 상기 도체 패턴이 전자 부품 접속용 전극 패턴이며, 이면에 형성한 상기 도체 패턴이 외부 접속용 전극 패턴인 도금용 공통 전극선.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00110109 | 2000-04-12 | ||
JP2000110109 | 2000-04-12 |
Publications (2)
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KR20020018676A true KR20020018676A (ko) | 2002-03-08 |
KR100775632B1 KR100775632B1 (ko) | 2007-11-13 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020017015362A KR100775632B1 (ko) | 2000-04-12 | 2001-04-04 | 도금용 공통 전극선 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7154048B2 (ko) |
JP (1) | JP4532807B2 (ko) |
KR (1) | KR100775632B1 (ko) |
TW (1) | TW544822B (ko) |
WO (1) | WO2001078139A1 (ko) |
Cited By (1)
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KR100702016B1 (ko) * | 2005-02-02 | 2007-03-30 | 삼성전자주식회사 | 양면 실장 메모리 모듈의 인쇄 회로 기판 및 이를이용하는 양면 실장 메모리 모듈 |
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US7181837B2 (en) * | 2004-06-04 | 2007-02-27 | Micron Technology, Inc. | Plating buss and a method of use thereof |
JP2006348371A (ja) * | 2005-06-20 | 2006-12-28 | Fujitsu Ltd | 電解めっき方法 |
JP2009170561A (ja) * | 2008-01-15 | 2009-07-30 | Panasonic Corp | 配線基板およびその製造方法 |
JP4484934B2 (ja) | 2008-02-26 | 2010-06-16 | 富士通メディアデバイス株式会社 | 電子部品及びその製造方法 |
JP5188289B2 (ja) | 2008-06-26 | 2013-04-24 | ラピスセミコンダクタ株式会社 | プリント基板の製造方法 |
TWI393969B (zh) * | 2009-05-27 | 2013-04-21 | Au Optronics Corp | 一種具有迴轉訊號傳輸線路之顯示基板及其製造方法 |
JP5952032B2 (ja) * | 2012-03-07 | 2016-07-13 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
US9222178B2 (en) | 2013-01-22 | 2015-12-29 | GTA, Inc. | Electrolyzer |
US8808512B2 (en) | 2013-01-22 | 2014-08-19 | GTA, Inc. | Electrolyzer apparatus and method of making it |
KR20220037857A (ko) * | 2020-09-18 | 2022-03-25 | 삼성전기주식회사 | 인쇄회로기판 |
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US4426773A (en) * | 1981-05-15 | 1984-01-24 | General Electric Ceramics, Inc. | Array of electronic packaging substrates |
JPH0766932A (ja) | 1993-08-24 | 1995-03-10 | Canon Inc | 原稿読取装置 |
JPH08148770A (ja) | 1994-11-15 | 1996-06-07 | Sharp Corp | 配線基板 |
JPH08153819A (ja) * | 1994-11-29 | 1996-06-11 | Citizen Watch Co Ltd | ボールグリッドアレイ型半導体パッケージの製造方法 |
JPH0955398A (ja) | 1995-08-10 | 1997-02-25 | Murata Mfg Co Ltd | 半導体装置の製造方法 |
JP3717660B2 (ja) * | 1998-04-28 | 2005-11-16 | 株式会社ルネサステクノロジ | フィルムキャリア及びバーンイン方法 |
JPH11340609A (ja) * | 1998-05-26 | 1999-12-10 | Eastern Co Ltd | プリント配線板、および単位配線板の製造方法 |
JP3020201B2 (ja) * | 1998-05-27 | 2000-03-15 | 亜南半導体株式会社 | ボールグリッドアレイ半導体パッケージのモールディング方法 |
JP2001237346A (ja) * | 2000-02-23 | 2001-08-31 | Oki Electric Ind Co Ltd | 半導体素子搭載基板、及び半導体装置の製造方法 |
JP2001332579A (ja) * | 2000-05-19 | 2001-11-30 | Advantest Corp | 半導体回路装置及びその製造方法 |
US6319750B1 (en) * | 2000-11-14 | 2001-11-20 | Siliconware Precision Industries Co., Ltd. | Layout method for thin and fine ball grid array package substrate with plating bus |
TW479334B (en) * | 2001-03-06 | 2002-03-11 | Siliconware Precision Industries Co Ltd | Electroplated circuit process in the ball grid array chip package structure |
US6903442B2 (en) * | 2002-08-29 | 2005-06-07 | Micron Technology, Inc. | Semiconductor component having backside pin contacts |
-
2001
- 2001-04-04 WO PCT/JP2001/002911 patent/WO2001078139A1/ja active Application Filing
- 2001-04-04 US US09/979,071 patent/US7154048B2/en not_active Expired - Lifetime
- 2001-04-04 KR KR1020017015362A patent/KR100775632B1/ko active IP Right Grant
- 2001-04-04 JP JP2001574895A patent/JP4532807B2/ja not_active Expired - Lifetime
- 2001-04-11 TW TW090108628A patent/TW544822B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100702016B1 (ko) * | 2005-02-02 | 2007-03-30 | 삼성전자주식회사 | 양면 실장 메모리 모듈의 인쇄 회로 기판 및 이를이용하는 양면 실장 메모리 모듈 |
Also Published As
Publication number | Publication date |
---|---|
US20020157958A1 (en) | 2002-10-31 |
US7154048B2 (en) | 2006-12-26 |
JP4532807B2 (ja) | 2010-08-25 |
KR100775632B1 (ko) | 2007-11-13 |
WO2001078139A1 (fr) | 2001-10-18 |
TW544822B (en) | 2003-08-01 |
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