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KR102313335B1 - 가스 공급 매니폴드와 그것을 사용하여 가스들을 챔버로 공급하는 방법 - Google Patents

가스 공급 매니폴드와 그것을 사용하여 가스들을 챔버로 공급하는 방법 Download PDF

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KR102313335B1
KR102313335B1 KR1020150025314A KR20150025314A KR102313335B1 KR 102313335 B1 KR102313335 B1 KR 102313335B1 KR 1020150025314 A KR1020150025314 A KR 1020150025314A KR 20150025314 A KR20150025314 A KR 20150025314A KR 102313335 B1 KR102313335 B1 KR 102313335B1
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gas
manifold conduit
tubular
supply
injection ports
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뤼키안 씨 디라
헤르베르트 테르호르스트
미하엘 할핀
칼 브히테
토드 로베르트 둔
에릭 셰로
멜핀 페르바스
흐리스토페르 뷔스테르
키레 폰두룰리아
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에이에스엠 아이피 홀딩 비.브이.
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Abstract

웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템이, 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관; 및 제 1 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부 및 제 2 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함한 가스 공급부들을 구비한다. 각각의 공급부는 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지고, 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관을 따라 균일하게 분포된다.

Description

가스 공급 매니폴드와 그것을 사용하여 가스들을 챔버로 공급하는 방법{GAS SUPPLY MANIFOLD AND METHOD OF SUPPLYING GASES TO CHAMBER USING SAME}
본 발명은 대체로 가스 공급 매니폴드 및 가스들을 공급하는 방법에 관한 것이고, 특히 다수의 가스들을 프로세싱 챔버로 균일하게 공급하기 위한 가스 공급 매니폴드 (manifold) 및 가스들을 공급하는 방법에 관한 것이다.
반도체 웨이퍼과 같은 기판 상에 필름을 증착 (deposit) 하는 방법으로서, 플라즈마 강화 ALD (plasma-enhanced ALD; PEALD) 와 열적 ALD와 같은 원자 층 증착 (atomic layer deposition; ALD) 이 잘 알려져 있다. ALD에서, 다수의 가스들이 종종 사용되므로, 분리된 가스 라인들이 ALD 반응기를 위한 공정 가스들을 전달하기 위해 요구된다. 각각의 가스 라인은 매니폴드 튜브를 통해 반응기 챔버 (reactor chamber; RC) 에 연결된다. 그러나, 이들 분리된 가스 라인들은 웨이퍼 전체에 걸쳐 나쁜 균일성을 초래하는데, 가스들이 반응기 챔버에 들어갈 때 충분히 혼합되지 않기 때문이다. 반응 챔버 상류의 가스들의 균일성은 웨이퍼 상의 필름의 평면 내 (in-plane) 균일성에 영향을 미친다. 비록 현재 300-mm 반응기 (즉, 300-mm 웨이퍼를 프로세싱하는 반응기) 가 일반적으로 사용되지만, 450-mm 반응기의 사용은 높은 스루풋과 생산성을 위해 시작되었다. 그러나, 균일성은 450-mm 반응기에서 악화되고 있다.
관련 기술에 관련된 문제들 및 해결책들의 임의의 논의가 본 발명에 대한 전후관계 (context) 를 제공할 목적으로만 본 개시물에 포함되고, 그 논의 중 임의의 것 또는 모두는 본 발명이 만들어졌던 때에는 알려졌었다는 것의 시인으로서 취해지지 않아야 한다.
일부 실시형태들에 따른 목적은 반응 챔버 안으로 진입하기 전에 다수의 가스들의 혼합을 개선하는 가스 혼합 시스템을 제공하는 것이다. 일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되는데, 다수의 주입 포트들은 튜브형 가스 매니폴드 도관의 축을 따라 동일한 높이에서 튜브형 가스 매니폴드 도관에 연결되고, 각각의 가스는 다수의 주입 포트들 안으로 나누어지고 튜브형 가스 매니폴드 도관 내부에서 동일한 높이로 분포된다. 다수의 주입 포트들은 가스의 확산을 위한 시간 규모 (time scale) 를 줄이며, 이에 의해 가스들의 혼합을 개선할 수 있다.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되며, 다수의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 어떤 각도에서 튜브형 가스 매니폴드 도관에 연결되는데, 그 각도는 튜브형 가스 매니폴드 도관 내부의 가스들의 농도 프로파일들을 맞추기 위해서 공정 조건들에 의존하여 설정되며, 이에 의해 가스들의 혼합을 개선한다. 예를 들어, 가스들이 반응기의 일측에서부터 반응기의 타측으로 수평으로 흐르는 450-mm 반응기를 위한 공정 조건들에 대해, 가스들은 제 1 소스 가스에 대해 약 20°± 5°에서 그리고 제 2 소스 가스에 대해 약 0°에서 튜브형 가스 매니폴드 도관 안으로 주입될 수도 있고, 가스들이 반응기의 상단에서부터 주변부 쪽으로 수직으로 및 방사상으로 흐르는 450-mm 반응기를 위한 공정 조건들에 대해, 가스들은 약 90°에서 튜브형 가스 매니폴드 도관 안으로 주입될 수도 있다.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되는데, 제 1 가스를 위한 다수의 주입 포트들과 제 2 가스를 위한 다수의 주입 포트들은 튜브형 가스 매니폴드 도관의 축을 따라 상이한 높이들에서 튜브형 가스 매니폴드 도관에 연결되며, 상부 주입 포트들은 포트들의 각도, 포트들의 지름 등의 측면에서 하부 주입 포트들과는 상이하게 설정되며, 이에 의해 가스들의 혼합을 개선한다.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되며, 다수의 주입 포트들은 반응기로부터 어떤 거리로 떨어져서 튜브형 가스 매니폴드 도관에 연결되는데, 그 거리는 양호한 혼합을 위해 충분히 길다. 예를 들어, 450-mm 반응기의 경우, 주입 포트들이 제공되는 포인트와 튜브형 가스 매니폴드 도관의 하부 말단 사이의 최소 길이는 약 115 mm일 수도 있다.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들은 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되며, 상단 주입 포트가 튜브형 가스 매니폴드 도관의 상단에 추가로 제공되는데, 상단 주입 포트로부터의 가스 흐름이 제어되며, 이에 의해 가스들의 혼합을 개선한다.
관련 기술을 넘어서게 달성되는 본 발명의 양태들 및 장점들을 요약하기 위해, 본 발명의 특정한 목적들 및 장점들이 본 개시물에서 설명되고 있다. 물론, 반드시 모든 이러한 목적들 또는 장점들이 본 발명의 임의의 특정 실시형태에 따라 달성될 수도 있다는 것이 아님은 이해되어야 한다. 따라서, 예를 들어, 당업자들은 본원에서 교시 또는 제안될 수도 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서도 본 발명이 본원에서 교시된 바와 같은 하나의 장점 또는 장점들의 그룹을 달성하거나 또는 최적화하는 방식으로 실시되거나 또는 수행될 수도 있다는 것을 인식할 것이다.
본 발명의 추가의 양태들, 특징들 및 장점들이 뒤따르는 상세한 설명으로부터 명확하게 될 것이다.
특허 또는 출원 파일은 컬러로 만들어진 적어도 하나의 도면을 포함한다. 컬러 도면(들)을 갖는 이 특허 또는 특허 출원공개의 사본들이 요청 및 필요한 요금의 납부에 의거하여 관청에 의해 제공될 것이다.
본 발명의 이들 및 다른 특징들이 본 발명을 예시하는 의도이고 제한하는 의도는 아닌 바람직한 실시형태들의 도면들을 참조하여 이제 설명될 것이다. 도면들은 예시적 목적들을 위해 대단히 단순화되고 일정한 축척대로일 필요는 없다.
도 1은 본 발명의 일 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다.
도 2는 본 발명의 다른 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다.
도 3은 본 발명의 또 다른 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다.
도 4는 본 발명의 일 실시형태에 따른, 도 3에 예시된 가스 혼합 시스템의 가스 주입 포트들을 도시하는 개략도이다.
도 5는 본 발명의 일 실시형태에 따른 도 3에 예시된 가스 혼합 시스템의 벽들 상의 가스 농도들을 표현하는 전산 유체 동역학 (computational fluid dynamics; CFD) 시뮬레이션 (ANSYS Fluent) 을 사용하여 획득된 이미지를 도시하는데, 그 컬러들은 공정 가스 종 (species) 의 농도를 해석하는 공정 가스 몰 분율 (mole fraction) 들의 범위들을 표현하며, 청색 내지 적색의 스케일에서, 청색은 가스 종이 없다는 것을 나타내는 반면 적색은 가스 종의 높은 농도를 나타낸다.
도 6a는 3 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 20°의 각도로 제공되는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 6b는 5 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 20°의 각도로 제공되는 본 발명의 다른 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 7a는 5 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 25°의 각도로 제공되는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 7b는 5 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 15°의 각도로 제공되는 본 발명의 또 다른 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 8a는 공정 가스가 튜브형 가스 매니폴드 도관의 하부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 도 3에 예시된 것과 유사한 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다.
도 8b는 도 8a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 9a는 공정 가스가 튜브형 가스 매니폴드 도관의 상부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 도 3에 예시된 것과 유사한 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다.
도 9b는 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 10은 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 중간 (middle) 에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 11a는 공정 가스가 튜브형 가스 매니폴드 도관의 하부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 나선형 (helix) 설계를 갖는 유사한 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다.
도 11b는 도 11a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 12a 및 도 12b는, 건조 가스가 튜브형 가스 매니폴드 도관의 축 방향에서 상부 주입 포트들로부터 0.24 slm (도 12a) 및 0.72 slm (도 12b) 으로 튜브형 가스 매니폴드 도관 안으로 배출되는, 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진, 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지들을 도시한다.
도 13은, 건조 가스가 하부 포트들로부터 0.54 slm으로 튜브형 가스 매니폴드 도관 안으로 배출되는, 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진, 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 14는 450-mm 단일 웨이퍼 프로세싱 반응기를 위한 기존의 샤워 헤드의 벽들 상의 가스 농도들을 나타내는 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 15는 (A) 주입 포트들이 내부 벽을 따라 위치되는 경우, (B) 주입 포트들이 중앙과 내부 벽 사이의 중간에 위치되는 경우, 및 (C) 주입 포트들이 중앙에 위치되는 경우의 주입 포트들로부터 확산 포인트들까지의 거리들을 개략적으로 예시하는 튜브형 매니폴드 도관의 단면도들을 도시한다.
도 16은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 중앙 가스 포트에 부착되도록 되는 플라즈마-지원형 증착 장치의 개략도이다.
도 17은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 측면 가스 포트에 부착되도록 되는 UV-지원형 증착 장치의 개략도이다.
본 개시물에서, "가스"는 기화된 (vaporized) 고체 및/또는 액체를 포함할 수도 있고 단일 가스 또는 가스들의 혼합물에 의해 구성될 수도 있다. 비슷하게, 관사 "a" 또는 "an"의 사용에 해당하는 국어 표현은 종 (species) 또는 다수의 종들을 포함하는 속 (genus) 을 말한다. 본 개시물에서, 튜브형 가스 매니폴드 도관을 통해 반응 챔버로 도입된 가스가, 선구물질 (precursor) 들, 반응물 (reactant) 가스들, 및 첨가물 (additive) 가스들 (예컨대, NH3, TiCl4, O3) 로 이루어진 그룹으로부터 선택된 적어도 하나의 반응 가스인 공정 가스와, 희석 가스들, 퍼지 (purge) 가스들, 및 캐리어 가스들 (예컨대, Ar, He, Ne, Kr, 또는 Xe와 같은 희유 (rare) 가스, N2, H2, O2와 같은 다른 불활성 가스) 로 이루어진 그룹으로부터 선택된 적어도 하나의 불활성 가스인 건조 가스를 포함할 수도 있거나, 그러한 가스들로 기본적으로 구성될 수도 있거나, 또는 구성될 수도 있다. 첨가물 가스는 반응 챔버에서의 선구물질을 산화, 탄화, 및/또는 질화하기 위한 가스를 포함한다. 선구물질은 캐리어 가스로 도입될 수 있다. 공정 가스 및 건조 가스 이외의 가스, 즉, 튜브형 가스 매니폴드 도관을 통과하는 일 없이 도입된 가스가, 예컨대, 반응 공간을 봉지하기 위해 사용될 수도 있는데, 그 도입된 가스는 봉지 (seal) 가스를 포함한다. 희석 가스, 퍼지 (purge) 가스, 캐리어 가스, 및 봉지 가스는 독립적으로 선택될 수 있다. 건조 가스와 공정 가스는 반응기 상류의 튜브형 가스 매니폴드 도관 내에서 혼합되어서, 건조 가스와 공정 가스는 튜브형 가스 매니폴드 도관 내에서 반응성이거나 또는 미미하게 반응성 (반응이 최소임) 이다. 예를 들어, O3는 분해되지만, 특정한 조건들 하에서, 분해율은 낮고 그것의 수명은 반응기 섹션에 도달할 만큼 충분히 길어서, O3는 공정 가스로서 사용될 수 있다. 게다가, 본 개시물에서는, 작업가능 범위가 일상적인 작업에 기초하여 결정될 수 있을 때 변수의 임의의 2 개의 수들이 그 변수의 작업가능 범위를 구성할 수 있고 표시된 임의의 범위들은 끝점 (endpoint) 들을 포함하거나 또는 배제할 수도 있다. 덧붙여, 표시된 변수들의 임의의 값들은 정확한 값들 또는 근사 값들을 지칭하고 동등물들을 포함할 수도 있고, 일부 실시형태들에서는 평균, 중간, 대표, 과반수 (majority) 등을 지칭할 수도 있다. 게다가, 본 개시물에서, 반응 챔버는 단일 챔버와 듀얼 챔버, 그리고 전형적으로는 특히 450-mm 웨이퍼를 프로세싱하기 위한 단일-웨이퍼 프로세싱 챔버를 포함하나 그것들로 제한되지는 않는다. 또한, 디바이스 치수들을 규모축소하기 위해, 개시된 구성들 또는 그 개조예들은 300-mm 웨이퍼를 프로세싱하기 위한 단일-웨이퍼 프로세싱 챔버 또는 임의의 다른 적합한 챔버들에 적용될 수 있다.
조건들 및/또는 구조들이 특정되지 않은 본 개시물에서, 당업계에서 숙련된 자들은 일상적인 실험 상 본 개시물의 관점에서, 이러한 조건들 및/또는 구조들을 쉽사리 제공할 수 있다.
개시된 실시형태들의 모두에서, 일 실시형태에서 사용되는 임의의 엘리먼트가, 의도된 목적들을 위해, 그것과 동등한, 명시적으로, 반드시, 또는 본질적으로 본원에서 개시된 것들을 포함한 임의의 엘리먼트들로 교체될 수 있다. 게다가, 본 발명은 장치들 및 방법들에 동일하게 적용될 수 있다.
본 개시물에서, 임의의 정의된 의미들은 일부 실시형태들에서 일반적인 및 관습적인 의미들을 반드시 배제하지는 않는다.
실시형태들은 바람직한 실시형태들에 관하여 설명될 것이다. 그러나, 본 발명은 바람직한 실시형태들로 제한되지 않는다.
일부 실시형태들에서, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템은, (i) 튜브형 가스 매니폴드 도관에서 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하기 위해 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관; 및 (ii) 제 1 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부와 제 2 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함하는 가스 공급부들로서, 각각의 가스 공급부는 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖는 가스 공급부들을 포함하며, 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관의 둘레 (circumference) 를 따라 균일하게 분포된다. 용어 "균일하게 분포된다 (evenly distributed)"는 둘레를 따라 실질적으로 동일한 간격으로 분포된 것 또는 둘레를 따라 반복적인 패턴의 분포를 사용하여 분포된다는 것을 뜻한다. 튜브형 가스 매니폴드 도관은 축을 가지고, 축 방향 포지션은, 튜브형 가스 매니폴드 도관의 하부 말단으로부터 그 축을 따라 축 방향 포인트까지의 거리에 의해 정의되고, 축 방향 포인트를 통과하는 평면 상에 있는 그리고 튜브형 가스 매니폴드 도관의 축에 수직인 임의의 포인트들을 포함한다. 제 1 축 방향 포지션에서의 튜브형 가스 매니폴드 도관의 둘레는 튜브형 가스 매니폴드 도관의 내부에 노출된 둘레이다. 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 둘레를 따라 균일하게 분포되며, 즉, 각각의 가스 공급부의 포트들의 중심들은 제 1 축 방향 포지션에서 둘레를 따라 실질적으로 동일한 간격으로 배치된다. 가스 공급부는 가스 라인에 의해 정의되며, 즉, 제 1 가스 공급부 및 제 2 가스 공급부는, 독립적으로 또는 상이하게 각각 제어될 수 있는 상이하고 별개인 가스 라인들에 연결된다. 일부 실시형태들에서, 튜브형 가스 매니폴드 도관은, 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 직접 연결되도록, 즉, 자동 압력 조정기 또는 질량 유량 제어기와 같은 임의의 흐름 제어 디바이스 없이 연결되도록 된다. 일부 실시형태들에서, 주입 포트들은 튜브형 가스 매니폴드 도관에 직접 고정되게 연결된다.
일부 실시형태들에서, 제 1 공급부의 주입 포트들의 수와 제 2 공급부의 주입 포트들의 수는 동일하고, 제 1 공급부의 주입 포트들과 제 2 공급부의 주입 포트들은 튜브형 가스 매니폴드 도관의 둘레를 따라 번갈아 배치된다. 대안으로, 제 1 공급부의 주입 포트들의 수와 제 2 공급부의 주입 포트들의 수는 상이하다. 바람직하게는, 모든 주입 포트들은 둘레를 따라 실질적으로 동일한 간격으로 배치된다. 일부 실시형태들에서, 각각의 공급부의 주입 포트들의 수는 2 내지 10, 바람직하게는 4 내지 8이다.
제 1 공급부는 제 1 가스의 유입을 위한 유입구와 제 1 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 1 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고, 제 2 공급부는 제 2 가스의 유입을 위한 유입구와 제 2 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 2 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비한다. C-자형 공통 채널은 튜브형 가스 매니폴드 도관을 둘러싼다. 일부 실시형태들에서, 제 1 공급부의 C-자형 공통 채널 및 제 2 공급부의 C-자형 공통 채널은 튜브형 가스 매니폴드 도관의 축에 수직인 동일한 평면 상에 동심적으로 (concentrically) 배치되며, 제 1 공급부의 C-자형 공통 채널은 제 2 공급부의 C-자형 공통 채널보다 큰 지름을 가지며, 제 1 공급부의 C-자형 공통 채널의 다수의 유출구들은 C-자형 공통 채널의 내부 주변부에 연결되는 한편, 제 2 공급부의 C-자형 공통 채널의 다수의 유출구들은 C-자형 공통 채널의 외부 주변부에 연결되어서, 제 1 및 제 2 공급부들 양쪽 모두를 위한 다수의 유출구들은 동일한 길이를 가질 수 있고 튜브형 가스 매니폴드 도관의 축에 대해 동일한 각도에서 튜브형 가스 매니폴드 도관에 연결될 수 있다.
대안으로, C-형상은 튜브형 가스 매니폴드 도관을 둘러싸는 완전한 원형 형상일 수 있다.
일부 실시형태들에서, 각각의 공급부의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 90°, 바람직하게는 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 일부 실시형태들에서, 각각의 공급부의주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 90°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 그 각도는 반응 챔버의 유형, 예컨대, 샤워헤드 형 (가스가 웨이퍼의 외부 주변부에 방사상으로 흐름) 또는 크로스-플로 (cross-flow) 형 (가스가 웨이퍼의 일측에서부터 웨이퍼의 반대측으로 흐름) 에 의존하고, 또한 공정 조건들, 포트들의 지름, 및 매니폴드의 지름에 의존하고, 추가로는 상단 주입 포트가 제공되는지의 여부에 의존한다. 예를 들어, 그 각도는 450-mm 웨이퍼를 위한 샤워헤드 형 반응기 (예컨대, ALD를 위한 것이고 반응기의 상단에 배치된 원격 플라즈마에 연결된 비교적 작은 샤워헤드를 갖는 EmerALD®) 에 대해 약 15° 내지 약 25°, 그리고, 예를 들어, 450-mm 웨이퍼를 위한 다른 샤워헤드 형 반응기 (예컨대, 플라즈마-강화 ALD를 위한 것이고 다수의 독립 챔버들을 갖는 Eagle®) 에 대해 약 90°일 수도 있다.
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 제 1 축 방향 포지션의 하류에서의 제 1 지름, 및 제 1 축 방향 포지션에서의 제 2 지름을 가지며, 상기 제 2 지름은 제 1 지름보다 작아서, 주입 포트들은, 예를 들어, 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결될 수 있다. 일부 실시형태들에서, 제 1 지름 (내부 지름) 은 약 14 mm ±50%이고, 제 2 지름 (내부 지름) 은 약 10 mm ±50%이다. 일부 실시형태들에서, 각각의 주입 포트의 내부 지름 (이는 통상 다수의 유출구들의 내부 지름과 같음) 은 약 3 mm ±50%이다.
일부 실시형태들에서, 제 1 공급부는 공정 가스 (예컨대, 금속 (metallo) -유기 화합물) 와 같은 반응 가스를 제공하는 가스 소스에 연결되고, 제 2 공급부는 희유 가스와 같은 건조 가스를 제공하는 가스 소스에 연결된다.
일부 실시형태들에서, 가스 공급부들은 하부 가스 공급부들로서 역할을 하고, 가스 주입구 시스템은, 상부 가스 공급부들을 더 포함하며, 상부 가스 공급부들은 제 3 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 3 공급부 및 제 4 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 4 공급부를 포함하며, 상부 가스 공급부들의 각각은 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지며, 제 2 축 방향 포지션은 제 1 축 방향 포지션의 상류에 위치된다.
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 제 1 축 방향 포지션의 하류에서의 제 1 지름, 제 1 축 방향 포지션에서의 제 2 지름, 및 제 2 축 방향 포지션에서의 제 3 지름을 가지며, 상기 제 3 지름은 제 1 지름보다 작은 제 2 지름보다 작아서, 제 3 및 제 4 공급부들의 주입 포트들은, 예를 들어, 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결될 수 있다. 일부 실시형태들에서, 제 3 지름 (내부 지름) 은 약 6 mm ±50%이다.
일부 실시형태들에서, 제 3 및 제 4 공급부들 각각의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 90°, 바람직하게는 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 제 3 및 제 4 공급부들 각각의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대략 평행하게 (약 0° 내지 약 5°의 각도에서) 튜브형 가스 매니폴드 도관에 연결되고, 제 1 및 제 2 공급부들 각각의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 15° 내지 약 25°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 일부 실시형태들에서, 제 3 및 제 4 공급부들의 주입 포트들의 수는 2 내지 10, 바람직하게는 4 내지 8이다. 일부 실시형태들에서, 제 3 및 제 4 공급부들 각각의 주입 포트들의 수는 제 1 및 제 2 공급부들 각각의 주입 포트들의 수 이하이다. 일부 실시형태들에서, 제 1 축 방향 포지션과 제 2 축 방향 포지션 사이의 거리는 약 30 mm ±50%이다. 일부 실시형태들에서, 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션과 하부 말단 사이의 길이는 튜브형 가스 매니폴드 도관의 약 115 mm ±50%이다.
일부 실시형태들에서, 제 3 공급부는 제 3 가스의 유입을 위한 유입구와 제 3 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 3 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고, 제 4 공급부는 제 4 가스의 유입을 위한 유입구와 제 4 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 4 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비한다. C-자형 공통 채널은 튜브형 가스 매니폴드 도관을 둘러싼다. 대안으로, C-형상은 튜브형 가스 매니폴드 도관을 둘러싸는 완전한 원형 형상일 수 있다.
일부 실시형태들에서, 가수 주입구 시스템은, 보조 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 상단 공급부를 더 포함하며, 상단 공급부는 튜브형 가스 매니폴드 도관의 상류 말단에서 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는다. 일부 실시형태들에서, 상단 공급부는 건조 가스를 제공하는 가스 소스에 연결된다. 일부 실시형태들에서, 상단 공급부의 주입 포트의 내부 지름은 약 6 mm ±50%인데, 이는 다른 공급부들의 주입 포트의 내부 지름보다 크다. 튜브형 가스 매니폴드 도관, 주입 포트들 등은 알루미늄 합금, 스테인레스 강철 등과 같은 임의의 적합한 재료로 만들어질 수도 있다.
일부 실시형태들에서, 웨이퍼 프로세싱 반응기는 원자 층 증착 (ALD) 을 위한 반응기 또는 화학 기상 증착 (CVD) 을 위한 반응기이고, 튜브형 가스 매니폴드 도관은 ALD 또는 CVD를 위해 반응기의 가스 주입구 포트에 연결된다. 게다가, 반응기는 에칭, 어닐링 등을 위한 반응기일 수 있다. 예를 들어, 본원에서 개시된 가스 혼합 시스템을 사용하여, ALD의 경우, 건조 가스 및 공정 가스의 혼합이 수행될 수도 있고, CVD의 경우, 상이한 공정 가스들 및 상이한 건조 가스들의 혼합이 수행될 수도 있다.
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 가스 주입구 포트를 샤워헤드 형인 웨이퍼 프로세싱 반응기의 웨이퍼 수용 영역 위쪽에서 중앙에 배치하도록 된다.
본 발명의 다른 양태에서, 본원에서 개시된 가스 주입구 시스템을 사용하여 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법이, (a) 제 1 가스를 제 1 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하는 한편, 제 2 가스를 제 2 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하며, 이로 인해 제 1 가스 및 제 2 가스가 튜브형 가스 매니폴드 도관 내부에서 혼합되게 하는 것; 및 (b) 웨이퍼 프로세싱 반응기에 로드된 기판 상에 필름을 증착하기 위해 혼합된 가스를 가스 주입구 시스템을 통해 웨이퍼 프로세싱 반응기로 공급하는 것을 포함한다.
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 튜브형 가스 매니폴드 도관의 상류 말단에서 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는 상단 공급부를 더 포함하며, 그 방법은 불활성 가스를 상단 공급부의 주입 포트를 통해 튜브형 가스 매니폴드 도관으로 공급하면서 튜브형 가스 매니폴드 도관에 제 1 및 제 2 가스들을 공급하는 것을 더 포함하며, 제 1 및 제 2 가스들 중 하나는 공정 가스이다.
일부 실시형태들에서, 그 필름은 제 1 조건들 하에서 증착되고, 그 방법은 제 1 조건들 하에서 증착된 필름의 균일도에 비해 필름의 개선된 균일도를 갖는 필름을 기판 상에 증착하기 위해서, 상단 공급부로부터의 불활성 가스의 흐름 율을 변경하면서 불활성 가스의 흐름 율을 제외한 제 1 조건들을 유지하는 것을 더 포함한다.
일부 실시형태들에서, 가스 공급부들은 하부 가스 공급부들로서 역할을 하고, 가스 주입구 시스템은 제 3 공급부 및 제 4 공급부를 포함하는 상부 가스 공급부들을 더 포함하며, 상부 가스 공급부들의 각각은 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖고, 제 2 축 방향 포지션은 제 1 축 방향 포지션의 상류에 위치되며, 그 방법은 제 3 가스 및 제 4 가스를 각각 제 3 공급부 및 제 4 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하면서 튜브형 가스 매니폴드 도관으로 제 1 및 제 2 가스들 중 하나를 공급하는 것을 더 포함하며, 제 1 및 제 2 가스들 중 하나는 공정 가스이다.
일부 실시형태들에서, 제 1 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이며, 제 2 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이며, 제 3 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이고, 제 4 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이다.
일부 실시형태들에서, 증착의 유형에 의존하여, 제 1 및 제 2 공급부들은, 예컨대, 펄스 식으로 공급되는 반면, 제 3 및 제 4 공급부들은 지속적으로 공급된다. 공정 온도가 24℃ 내지 약 500℃의 범위에 있을 수도 있는 ALD의 경우, 하나의 사이클의 지속기간은 약 0.01 초 내지 약 10.0 초 (예컨대, 약 0.5 초 내지 약 2.0 초) 의 범위에 있을 수도 있다.
본 발명은 본 발명을 제한하려고 의도되지 않은 도면들을 참조하여 상세히 설명될 것이다.
도 3은 본 발명의 일 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다. 도 4는 본 발명의 일 실시형태에 따른, 도 3에 예시된 가스 혼합 시스템의 가스 주입 포트들을 도시하는 개략도이다. 가스 주입구 시스템 (31) 은 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관 (32); 제 1 가스를 공급하기 위한 제 1 공급부 (33); 제 2 가스를 공급하기 위한 제 2 공급부 (34); 제 3 가스를 공급하기 위한 제 3 공급부 (35); 제 4 가스를 공급하기 위한 제 4 공급부 (36); 및 제 5 가스를 공급하기 위한 상단 공급부 (37) 를 포함한다. 제 1 공급부 (33) 는 제 1 유입구 (33a), 제 1 유입구 (33a) 가 연결되는 제 1 C-자형 유통 채널 (46), 그리고 제 1 C-자형 유통 채널 (46) 로부터 각각 연결 포인트들 (47a, 47b, 및 47e) (연결 포인트들 (47c 및 47d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 통해 연장하고 제 1 축 방향 포지션 (51) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 1 다수의 유출구들 (40a 내지 40e) 의 하부 말단들인 개별 제 1 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 1 다수의 유출구들 (40a, 40b, 및 40e) (유출구들 (40c 및 40d) 이 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.
제 2 공급부 (34) 는 제 2 유입구 (34a), 제 2 유입구 (34a) 가 연결되는 제 2 C-자형 유통 채널 (38), 그리고 제 2 C-자형 유통 채널 (38) 로부터 각각 연결 포인트들 (48a 및 48e) (연결 포인트들 (48b, 48c, 및 48d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 통해 연장하고 제 1 축 방향 포지션 (51) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 2 다수의 유출구들 (41a 내지 41e) 의 하부 말단들인 개별 제 2 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 2 다수의 유출구들 (41a 및 41e) (유출구들 (41b, 41c, 및 41d) 이 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.
제 1 다수의 유출구들 (40a 내지 40e) 과 제 2 다수의 유출구들 (41a 내지 41e) 은 튜브형 가스 매니폴드 도관 (32) 의 축 주위에서 동일한 간격으로 번갈아 배치되며, 즉, 제 1 주입 포트들과 제 2 주입 포트들은 제 1 축 방향 포지션 (51) 에서 튜브형 가스 매니폴드 도관 (32) 의 둘레를 따라 번갈아 그리고 균일하게 분포된다. 제 1 및 제 2 C-자형 분배 채널들 (46, 38) 이 사용되므로, 제 1 다수의 유출구들 (40a 내지 40e) 과 제 2 다수의 유출구들 (41a 내지 41e) 은 튜브형 가스 매니폴드 도관 (32) 의 축에 대해 동일한 각도 (대략 20°) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된다.
제 3 공급부 (35) 는 제 3 유입구 (35a), 제 3 유입구 (35a) 가 연결되는 제 3 C-자형 유통 채널 (44), 그리고 제 3 C-자형 유통 채널 (44) 로부터 각각 연장하고 제 2 축 방향 포지션 (52) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 3 다수의 유출구들 (42a 내지 42e) 의 하부 말단들인 개별 제 3 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 3 다수의 유출구들 (42a 및 42e) (유출구들 (42b, 42c, 및 42d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.
제 4 공급부 (36) 는 제 4 유입구 (36a), 제 4 유입구 (36a) 가 연결되는 제 4 C-자형 유통 채널 (39), 그리고 제 4 C-자형 유통 채널 (39) 로부터 각각 연장하고 제 2 축 방향 포지션 (52) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 4 다수의 유출구들 (43a 내지 43e) 의 하부 말단들인 개별 제 4 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 4 다수의 유출구들 (43a, 43b, 및 43e) (유출구들 (43c 및 43d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.
제 3 다수의 유출구들 (42a 내지 42e) 과 제 4 다수의 유출구들 (43a 내지 43e) 은 튜브형 가스 매니폴드 도관 (32) 의 축 주위에서 동일한 간격으로 번갈아 배치되며, 즉, 제 3 주입 포트들과 제 4 주입 포트들은 제 2 축 방향 포지션 (52) 에서 튜브형 가스 매니폴드 도관 (32) 의 둘레를 따라 번갈아 그리고 균일하게 분포된다. 제 3 및 제 4 C-자형 분배 채널들 (44, 39) 이 상이한 축 방향 포지션들에 배치되므로, 제 3 다수의 유출구들 (42a 내지 42e) 과 제 4 다수의 유출구들 (43a 내지 43e) 은 튜브형 가스 매니폴드 도관 (32) 에 동일한 각도로, 즉, 튜브형 가스 매니폴드 도관 (32) 의 축에 대략 평행하게 연결된다.
상단 주입 포트 (37) 는 튜브형 가스 매니폴드 도관 (32) 의 상단에 연결된다.
상단 주입 포트 (37) 의 내부 지름은 약 6 mm이며, 제 1 내지 제 4 주입 포트들의 내부 지름은 약 3 mm이고, 제 1 축 방향 포지션 (51) 하류의 튜브형 가스 매니폴드 도관의 내부 지름은 약 14 mm이다. 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서부터 하부 말단까지의 길이는 약 115 mm이다.
도 5는 본 발명의 일 실시형태에 따른 도 3에 예시된 가스 혼합 시스템의 내부 벽들 상의 가스 농도들을 표현하는 전산 유체 동역학 (computational fluid dynamics; CFD) 시뮬레이션 (ANSYS Fluent) 을 사용하여 획득된 이미지를 도시하는데, 그 컬러들은 공정 가스 종 (species) 의 농도를 해석하는 공정 가스 몰 분율들의 범위들을 표현하며, 청색 내지 적색의 스케일에서, 청색은 가스 종이 없다는 것을 나타내는 반면 적색은 가스 종의 높은 농도를 나타낸다. 이 실시형태에서, 제 1 공급부 (33), 제 3 공급부 (35), 제 4 공급부 (36), 및 상단 공급부 (37) 는 Ar을 공급하는 반면, 제 2 공급부 (34) 는 공정 가스를 공급하는데, 적색의 영역은 공정 가스 중 높은 농도의 가스 종을 보여주며, 청색의 영역은 공정 가스 중 무 (no) 농도의 가스 종을 보여주고, 녹색의 영역은 공정 가스 중 중간 농도의 가스 종을 보여준다. 도 5로부터 알 수 있듯이, 공정 가스 중 높은 농도의 가스 종을 갖는 가스는 제 2 C-자형 유통 채널을 포함한 제 2 공급부 (34) 의 벽 상에 존재한다. 그러나, 하나의 축 방향 흐름 (상단 공급부 (37)) 과 Ar 가스의 3 개의 둘레상 (circumferential) 흐름들 (제 1, 제 3, 및 제 4 공급부들 (33, 35, 36)) 과 공정 가스의 하나의 둘레상 흐름 (제 2 공급부 (34)) 의 조합 때문에, 가스들은 제 1 축 방향 포지션의 하류에서 즉시 잘 혼합되고, 그러면 잘 혼합된 희석된 공정 가스가 튜브형 가스 매니폴드 도관 (32) 의 하부 말단을 통해 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 공급된다.
도 6a는 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단 (즉, 반응기 섹션의 유입구) 에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은, 3 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 각각의 제 1 및 제 2 공급부들에 그리고 제 2 축 방향 포지션에서 각각의 제 3 및 제 4 공급부들에 제공된다는 것을 제외하면 도 3 및 도 4에 예시된 구성을 갖는다. 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 6a로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 중앙에서 그리고 중앙에서부터 제 2 공급부에 대한 주입 포트들의 로케이션들에 대응하는 3 개의 방사 방향들에서 내부 벽 쪽으로 높아서, 각각의 공급부에 대해 3 개의 주입 포트들의 구성이 더 긴 시간 규모의 가스 확산을 필요로 할 수도 있다는 것을 나타낸다. 도 6a의 분포도로부터 계산된 가스 혼합의 불-균일도 (non-uniformity) 는 36.0 %이다. 불-균일도 (UN) 는 다음과 같이 계산된다: NU = 100 x [1 - ((최대 신호 - 최소 신호) / (신호의 평균 값))]
도 6b는 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단 (즉, 반응기 섹션의 유입구) 에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은 도 3 및 도 4에 예시된 구성을 갖는다 (5 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 각각의 제 1 및 제 2 공급부들에 그리고 제 2 축 방향 포지션에서 각각의 제 3 및 제 4 공급부들에 제공된다). 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 6b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 중앙 근처에서만 높아서, 각각의 공급부에 대한 5 개의 주입 포트들의 구성이 가스 확산의 시간 규모를 상당히 감소시킬 수 있다는 것을 나타낸다. 도 6b의 분포도로부터 계산된 가스 혼합물의 불-균일도는 3.4 %이다. 도 6a 및 도 6b로부터 이해될 수 있듯이, 다수의 주입 포트들은 가스 확산의 시간 규모를 감소시키며, 이에 의해 혼합을 개선한다.
도 7a는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은, 5 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 제 1 및 제 2 공급부들 각각에 대해 (튜브형 가스 매니폴드 도관의 축에 대하여) 25°의 각도로 제공된다는 것을 제외하면 도 3 및 도 4에 예시된 구성을 갖는다. 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 7a로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 중앙에서 높은 반면 공정 가스의 가스 종의 농도는 내부 벽을 따라 낮아서, 각각의 공급부에 대해 25°의 각도로 설정된 5 개의 주입 포트들의 구성은 가스 확산의 시간 규모를 적당히 감소시킬 수 있다는 것을 나타낸다. 도 7a의 분포도로부터 계산된 가스 혼합의 불-균일도는 10%이다.
3 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 각각의 제 1 및 제 2 공급부들에 대해 20°의 각도로 제공되는 도 3 및 도 4에 예시된 구성을 가스 혼합 시스템이 갖는 일 실시형태를 도시하는 도 6b로 되돌아가면, 주입 포트들의 각도가 20° (가스 혼합의 불-균일도가 3.4%) 인 경우, 가스 확산은 도 7a에 예시된 바와 같이 주입 포트들의 각도가 25°인 경우 (가스 혼합의 불-균일도는 10%임) 보다 더 많이 진행한다.
도 7b는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은, 5 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 제 1 및 제 2 공급부들 각각에 대해 (튜브형 가스 매니폴드 도관의 축에 대하여) 15°의 각도로 제공된다는 것을 제외하면 도 3 및 도 4에 예시된 구성을 갖는다. 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 7b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 특히 주입 포트들의 로케이션들에 실질적으로 대응하는 5 개의 스폿들에서 내부 벽을 따라 높은 반면 공정 가스의 가스 종의 농도는 중앙에서 낮아서, 각각의 공급부에 대해 15°의 각도로 설정된 5 개의 주입 포트들의 구성은 가스 확산의 시간 규모를 적당히 감소시킬 수 있다는 것을 나타낸다. 도 7b의 분포도로부터 계산된 가스 혼합의 불-균일도는 9.7%이다.
도 7a, 도 6b, 및 도 7b로부터 이해될 수도 있듯이, 주입 포트들의 배향 또는 각도는 주입 포트들의 부근에서 혼합에 대량으로 영향을 미칠 수 있고, 따라서, 농도 프로파일은 중앙에서의 더 높은/더 낮은 농도가 상이한 각도들에 의해 설정될 수 있게 조정될 수 있고, 혼합이 개선되기 위한 최적 각도가 주어진 공정 조건들에 대해 존재한다.
가스들의 혼합은 주로 가스 확산에 의해 달성되고, 그러므로 확산이 일어나는 거리를 최소화하는 것이 필요하다. 이것이 매니폴드의 둘레 전체에 걸쳐 균일하게 분포된 다수의 주입 포트들이 효과적인 이유이며, 이에 의해 둘레상 거리를 최소화한다. 덧붙여서, 가스들을 효율적으로 혼합하기 위해, 확산이 일어나는 방사상 거리를 최소하는 것이 필요하다. 도 15는 (A) 주입 포트들이 내부 벽을 따라 위치되는 경우, (B) 주입 포트들이 중앙과 내부 벽 사이의 중간에 위치되는 경우, 및 (C) 주입 포트들이 중앙에 위치되는 경우의 주입 포트들로부터 확산 포인트들까지의 거리들을 개략적으로 예시하는 튜브형 매니폴드 도관의 단면도들을 도시한다. 도면들에서의 굵은 점들 (151) 은 튜브형 가스 매니폴드 도관의 둘레를 나타내는 원 (152) 에 대한 주입 포트들의 진입 포인트들을 나타낸다. (A), (B), 및 (C) 에서의 확산의 방사상 거리는 각각 R (반지름), R/2, 및 R이다. 또한, (A), (B), 및 (C) 에서의 확산의 최대 거리는 각각 R,
Figure 112015017683409-pat00001
, 및 R이다. 주입 포트들의 진입 포인트들이 이들 도면들에서 중앙과 내부 벽 사이의 중간인 경우, 확산의 거리는 최소이며, 이에 의해 가스들의 혼합을 개선한다. 적합한 방사상 거리는 가스가 매니폴드에 들어가는 경우의 가스의 속도 (이 가스 속도는 가스의 흐름 율, 압력, 온도, 유형 등과 같은 공정 조건들에 의해 결정됨), 주입 포트들의 내부 지름, 매니폴드의 축에 대한 주입 포트들의 배향, 매니폴드의 지름 등에 의존한다. 예를 들어, 샤워헤드 형 반응기들과 비교하여, 공정 조건들, 포트들의 지름, 및 매니폴드의 지름은 상이하고 (예컨대, 샤워헤드 형 반응기: 운반 가스 He, 압력 700 Pa, 포트들의 지름 5 mm, 매니폴드의 지름 20 mm; 다른 샤워헤드 형 반응기: 운반 가스 Ar, 압력 422 Pa, 포트들의 지름 3 mm, 매니폴드의 지름 14 mm), 결과적으로 포트들의 배향은 상이하게 설정된다. 예를 들어, 주입 포트들의 각도가 바람직하게는 450-mm 웨이퍼를 위한 샤워헤드 형 반응기 (예컨대, EmerALD®) 에 대해 약 15° 내지 약 25°이고, 450-mm 웨이퍼를 위한 다른 샤워헤드 형 반응기 (예컨대, Eagle®) 에 대해 약 90°이다.
도 8a는 공정 가스가 튜브형 가스 매니폴드 도관의 하부 축 방향 포지션에서 20°의 각도로 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다. 도 8b는 도 8a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은 도 3 및 도 4에 예시된 것과 유사한 구성을 갖는다 (C-자형 분배 채널들이 생략된다). 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 8a 및 도 8b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 매니폴드의 중앙과 둘레 사이에서 높은 반면, 공정 가스의 가스 종의 농도는 중앙의 작은 영역에서 낮아서, 이 구성은 가스 확산의 시간 규모를 효과적으로 감소시켜, 가스들의 혼합을 개선할 수 있다는 것을 나타낸다. 도 8b의 분포도로부터 계산된 가스 혼합의 불-균일도는 3.5%이다.
도 9a는 공정 가스가 튜브형 가스 매니폴드 도관의 상부 축 방향 포지션에서 0°의 각도로 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다. 도 9b는 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은 도 8a에서와 동일한 구성을 갖지만, 공정 가스는 상부 축 방향 포지션에서 0°의 각도로 공급된다. 도 9a 및 도 9b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 매니폴드의 중앙과 둘레 사이에서 높은 반면, 공정 가스의 가스 종의 농도는 중앙의 작은 영역에서 낮아서, 이 구성은 가스 확산의 시간 규모를 효과적으로 감소시켜, 가스들의 혼합을 개선할 수 있다는 것을 나타낸다. 도 9b의 분포도로부터 계산된 가스 혼합의 불-균일도는 2.1%이다.
더 많은 가스 라인들이 요구되는 경우, 이는 쉬운 제조를 위해 튜브형 가스 매니폴드 도관의 상이한 높이들 (2, 3 또는 더 많은 축 방향 포지션들) 에 주입 포트들을 배치함으로써 수용될 수 있다. 도 8a 내지 도 9b로부터 이해될 수 있듯이, 주입 포트들의 구성들은 축 방향 포지션에 의존하여 상이하게 최적화될 수 있다 (예컨대, 상부 축 방향 포지션에서의 주입 포트들의 각도 및 지름과 하부 축 방향 포지션에서의 그것들은 상이하게 또는 별개로 최적화될 수 있다).
도 10은 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 중간에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 중간 포인트는 하부 주입 포트들과 튜브형 가스 매니폴드 도관의 하부 말단 사이의 길이가 115 mm인 경우 (제 1 축 방향 포지션에서) 하부 주입 포트들로부터 56 mm에 위치된다. 도 10로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 링들의 형태로 불연속적으로 변하여, 주입 포트들로부터 튜브형 가스 매니폴드 도관의 하단 (즉, 반응기의 유입구) 까지의 최소 길이가 가스들의 양호한 혼합을 위해 존재하고 56 mm는 도 9a 및 도 9b에 예시된 115 mm와 비교하여 충분하지 않다는 것을 나타낸다. 도 10의 분포도로부터 계산된 가스 혼합의 불-균일도는 14.8%이다. 최소 길이는 공정 조건들에 주로 의존한다.
도 11a는 공정 가스가 튜브형 가스 매니폴드 주입구의 하부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 나선형 유사 (helix-like) 설계를 갖는 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 튜브형 가스 매니폴드 도관의 하부 주입 포트들로부터 하부 말단까지의 길이는 튜브형 가스 매니폴드 도관의 나선형 축을 따라 315 mm이고, 튜브형 가스 매니폴드 도관의 하부 말단으로부터의 하부 주입 포트들의 높이는 170 mm (일직선 거리임) 이다. 게다가, 주입 포트들은 90°의 각도로 설정된다. 도 11b는 도 11a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 도 11a 및 도 11b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 튜브형 가스 매니폴드 도관의 일측에서 높고 튜브형 가스 매니폴드 도관의 타측에서 낮아서, 주입 포트들의 구성이 나선형 설계에서 혼합에 미미한 영향을 가진다는 것을 나타낸다. 도 11b의 분포도로부터 계산된 가스 혼합의 불-균일도는 5%이다. 비교적 양호한 균일도가 달성되는데, 주로 튜브형 가스 매니폴드 도관의 주입 포트들로부터 하부 말단 (반응기의 유입구) 까지의 거리가 길기 때문이다.
도 12a 및 도 12b는 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지들을 도시하는데, 건조 가스 (둘레상 건조 가스) 가 튜브형 가스 매니폴드 도관의 축 방향에서 상부 주입 포트들로부터, 0.6 slm (도 8a 및 도 8b) 대신에, 0.24 slm (도 12a) 및 0.72 slm (도 12b) 으로 튜브형 가스 매니폴드 도관 안으로 배출된다는 것을 제외하면, 그 공정 조건들은 도 8a 및 도 8b에서 예시된 이미지들을 위해 사용된 것들과 동일하다. 다시 말하면, 상부 둘레상 건조 가스 흐름은 도 8b에 대한 것과 비교하면 도 12a의 경우 60%만큼 감소되는 반면, 상부 둘레상 건조 가스 흐름은 도 8b에 대한 것과 비교하면 도 12b의 경우 20%만큼 증가된다. 도 12a 및 도 12b로부터 알 수 있듯이, 상부 둘레상 건조 가스가 증가되는 경우, 공정 가스의 가스 종의 농도는 튜브형 가스 매니폴드 도관의 중앙에서 높고 그 둘레를 따라 낮은 반면, 상부 둘레상 건조 가스가 감소되는 경우, 공정 가스의 가스 종의 농도의 분포는 거의 역전되며, 즉, 공정 가스의 가스 종의 농도는 튜브형 가스 매니폴드 도관의 중앙에서 낮고 그 둘레를 따라 특히 상부 주입 포트들의 로케이션들에 대응하는 5 개의 스폿들에서 높다. 도 8b의 3.5%와 비교하면, 도 12a의 분포도로부터 계산된 가스 혼합의 불-균일도는 9.1%이고, 도 12b의 그것은 10.9%이다. 상부 둘레상 건조 가스 흐름을 조절함으로써, 가스들의 혼합은 효과적으로 개선될 수 있다.
도 13은 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지들을 도시하는데, 건조 가스 (둘레상 건조 가스) 가 20°의 각도에서 하부 주입 포트들로부터, 0.39 slm (도 8a 및 도 8b) 대신에, 0.54 slm으로 튜브형 가스 매니폴드 도관 안으로 배출된다는 것을 제외하면, 그 공정 조건들은 도 8a 및 도 8b에서 예시된 이미지들을 위해 사용된 것들과 동일하다. 다시 말하면, 하부 둘레상 건조 가스 흐름은 도 8b의 그것과 비교하면 도 13의 경우 약 40%만큼 증가된다. 도 13으로부터 알 수 있듯이, 하부 둘레상 건조 가스가 증가되는 경우, 공정 가스의 가스 종의 농도의 분포는 도 8b에서의 그것과 유사하지만, 그 분포는 주입 포트들의 포지션들에 의해 더 많이 영향을 받는다 (높은 농도의 5 개의 스폿들이 있음). 도 8b의 3.5%와 비교하면, 도 13의 분포도로부터 계산된 가스 혼합의 불-균일도는 4.6%이다. 하부 둘레상 건조 가스 흐름을 조절함으로써, 가스들의 혼합은 개선될 수 있다.
본원에서 개시된 튜브형 가스 매니폴드 도관은 반응 챔버 안으로의 가스들의 진입 전의 가스 종들의 혼합에 대단히 효과적이다. 가스들의 혼합은 샤워헤드 형 반응기에서 개선되지 않는다. 도 14는 450-mm 단일 웨이퍼 프로세싱 반응기를 위한 기존의 샤워 헤드의 벽들 상의 가스 농도들을 나타내는 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 도 14로부터 알 수 있듯이, 샤워헤드 (152) 에서, '좌측'의 가스는 "우측'의 가스와 만나지 않고, 그러므로 가스들이 샤워헤드 (152) 의 상류에서 혼합되지 않고 가스 주입구 포트 (151) 를 통해 샤워헤드 (152) 에 들어가면, 가스들의 농도의 불균일한 분포는 샤워헤드에서 유지될 수도 있다.
상기에서, 튜브형 가스 매니폴드 도관은 2 개의 축 방향 포지션들에 배치된 주입 포트들과, 상단에 배치된 상단 주입 포트를 갖는다. 그러나, 튜브형 가스 매니폴드 도관은 단일 축 방향 포지션에만 배치된 적어도 2 개의 주입 포트들과 상단에 배치된 상단 주입 포트를 가질 수 있어, 하나의 가스 종이 축 방향 포지션에서 주입 포트들을 통해 주입되는 반면 제 2 가스 종이 상단 주입 포트를 통해 주입된다. 게다가, 주입 포트들은 주입 포트들의 수를 증가시키는 경우 2 개를 초과하는 축 방향 포지션들에서 배치될 수 있다.
도 1은 본 발명의 일 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다. 가스 혼합 시스템 (1) 은 튜브형 매니폴드 도관 (9), 튜브형 가스 매니폴드 도관의 상부 부분에서 튜브형 가스 매니폴드 도관 (9) 에 연결된 주입 포트들 (2, 3, 4, 5, 6, 및 7), 및 상단 주입 포트 (8) 를 포함한다. 주입 포트들 (2 내지 7) 은 동일한 축 방향 포지션에서 (튜브형 가스 매니폴드 도관의 축에 대해) 약 45°의 각도로 튜브형 가스 매니폴드 도관 (9) 의 둘레를 따라 동일한 간격으로 배치된다. 튜브형 가스 매니폴드 도관 (9) 은 반응기의 가스 주입구 포트에 연결되도록 구성되는 하부 말단 (10) 을 갖는다. 상단 주입 포트 (8) 는 튜브형 가스 매니폴드 도관 (9) 의 축에 평행하게 배치된다.
건조 가스가 상단 주입 포트 (8) 에 그리고 또한 주입 포트들 (2, 7, 및 6) 에 공급되는 반면 공정 가스가 주입 포트들 (3, 4, 및 5) 에 공급되며 건조 가스가 3 개의 인접한 주입 포트들을 통과하고 공정 가스가 3 개의 인접한 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 27%이다. 그 반면, 건조 가스가 상단 주입 포트 (8) 에 그리고 또한 주입 포트들 (2, 6, 및 4) 에 공급되는 반면 공정 가스가 주입 포트들 (7, 5, 및 3) 에 공급되며 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 둘레를 따라 번갈아 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 0.4%인데, 이는 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 일측으로부터 공급되는 경우에 비해 현저히 낮다.
도 2는 본 발명의 다른 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다. 가스 혼합 시스템 (21) 은 튜브형 매니폴드 도관 (26) 과, 튜브형 가스 매니폴드 도관의 상부 부분에서 튜브형 가스 매니폴드 도관 (26) 에 연결된 주입 포트들 (22, 23, 24, 및 25) 을 포함한다. 주입 포트들 (22 내지 25) 은 동일한 축 방향 포지션에서 (튜브형 가스 매니폴드 도관의 축에 대해) 약 90°의 각도로 튜브형 가스 매니폴드 도관 (26) 의 둘레를 따라 동일한 간격으로 배치된다. 상단 주입 포트는 제공되지 않는다. 튜브형 가스 매니폴드 도관 (26) 은 반응기의 가스 주입구 포트에 연결되도록 구성되는 하부 말단을 갖는다.
건조 가스가 주입 포트들 (25 및 24) 에 공급되는 반면 공정 가스가 주입 포트들 (23 및 22) 에 공급되며 건조 가스가 2 개의 인접한 주입 포트들을 통과하고 공정 가스가 2 개의 인접한 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 6.2%이다. 그 반면, 건조 가스가 상단 주입 포트들 (24 및 22) 에 공급되는 반면 공정 가스가 주입 포트들 (25 및 23) 에 공급되며 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 둘레를 따라 번갈아 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 0.9%인데, 이는 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 일측으로부터 공급되는 경우에 비해 현저히 낮다.
본원에서 개시된 가스 혼합 시스템은 반응 챔버 안으로의 가스들의 진입 전에 둘 이상의 가스들을 혼합하는 것을 필요로 하는 임의의 적합한 반응 챔버에 연결될 수 있다. 도 16은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 중앙 가스 포트에 부착되도록 되는 플라즈마-지원형 증착 장치의 개략도이다. 예를 들어, 이 샤워헤드 형 반응기는, 반응 챔버 (243) 의 내부 (251) 에서 서로 평행하고 마주하게 배치된 한 쌍의 전기 전도성 평판 전극들 (242, 244) (기판 (241) 이 하부 전극 (242) 의 상단에 배치됨) 을 구비한 반응 챔버 (243), 반응기 챔버 (243) 의 상단에 배치되어 튜브형 가스 매니폴드 도관을 수용하기 위한 가스 주입구 포트 (200), 및 반응기 챔버 (243) 의 내부 (251) 로부터 가스를 배출하기 위한 배기부 (246) 를 포함한다. 그 장치는 HRF 전력 및 LRF 전력을 상부 전극 (244) 에 각각 인가하기 위한 RF 전력 소스들 (245, 290) 을 더 포함한다. 상부 전극 (242) 은 전기적으로 접지 (252) 된다. 반응 챔버 (243) 의 내부 (251) 로 봉지 가스를 도입하기 위한 봉지 가스 흐름 제어기 (264) 가 또한 반응 챔버 (243) 에 제공된다. 상부 전극 (244) 은 샤워헤드로서도 역할을 한다. 본원에서 개시된 가스 혼합 시스템의 튜브형 가스 매니폴드 도관은 가스 주입구 포트 (200) 상에 탑재되고 상부 전극 (244) 에 연결되고, 균일하게 혼합된 공정 가스들이 튜브형 가스 매니폴드 주입구로부터 반응 챔버 (243) 안으로 도입된다.
도 17은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 측면 가스 포트에 부착되도록 되는 UV-지원형 증착 장치의 개략도이다. 예를 들어, 이 크로스 플로 (cross-flow) 형 반응기는 공정 챔버 (179), 반응 챔버 (179) 의 하나의 측방향 측면에 제공된 주입기 플랜지 (171), 반응 챔버 (179) 의 다른 측방향 측면에 제공된 배기 플랜지 (172), 기판 (176) 이 배치되는 발열체 (susceptor; 177), 및 UV 광을 방출하는 하부 램프 어레이 (173), UV 광을 방출하는 상부 램프 어레이 (174), 내부 (180) 를 규정하기 위해 발열체 (177) 및 상부 램프 어레이 (174) 사이에 배치된 조사 (irradiation) 윈도우 그라스 (175), 및 본원에서 개시된 가스 혼합 시스템의 튜브형 가스 매니폴드 도관을 탑재하기 위해 주입기 플랜지 (171) 에 제공된 가스 주입구 포트 (178) 를 포함한다. 공정 가스들은 가스 혼합 시스템으로부터 주입기 플랜지 (171) 를 통해 공정 챔버 (179) 의 내부 (180) 안으로 도입되고 공정 챔버의 측 방향 (lateral direction) 으로 흐르고 배기 플랜지 (172) 를 통해 배출된다. 기판 (176) 은 하부 램프 어레이 (173) 및 상부 램프 어레이 (174) 로부터 방출된 UV 광으로 조사된다.
상기에서, 그 장치는 본원의 다른 곳에서 설명되는 증착 및 반응기 세정 공정들이 수행되게 하도록 프로그램되거나 또는 그렇지 않으면 구성된 하나 이상의 제어기(들) (미도시) 를 구비한다는 것을 숙련자가 이해할 것이다. 그 제어기(들)는 숙련자에 의해 이해될 바와 같이, 반응기의 다양한 전력 소스들, 가열 시스템들, 펌프들, 로보틱스 및 가스 흐름 제어기들 또는 밸브들과 통신된다.
수많은 및 다양한 수정들이 본 발명의 정신으로부터 벗어남 없이 만들어질 수 있다는 것은 당업자들에 의해 이해될 것이다. 그러므로, 본 발명의 형태들이 단지 예시적인 것이고 본 발명의 범위를 제한하고자 의도하지 않음이 이해되어야 한다.

Claims (20)

  1. 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템으로서,
    튜브형 가스 매니폴드 도관으로서, 상기 튜브형 가스 매니폴드 도관에서 혼합된 가스를 상기 웨이퍼 프로세싱 반응기로 공급하기 위해 상기 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된, 상기 튜브형 가스 매니폴드 도관; 및
    제 1 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부와 제 2 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함하는 가스 공급부들로서, 각각의 공급부는 상기 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖는, 상기 가스 공급부들을 포함하며,
    상기 가스 공급부들의 각각의 가스 공급부의 상기 주입 포트들은 상기 제 1 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관의 둘레를 따라 균일하게 분포되고,
    상기 제 1 공급부는 상기 제 1 가스의 유입을 위한 유입구와 상기 제 1 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 1 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고,
    상기 제 2 공급부는 상기 제 2 가스의 유입을 위한 유입구와 상기 제 2 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 2 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하며,
    상기 제 1 가스의 유출을 위한 다수의 유출구 및 상기 제 2 가스의 유출을 위한 다수의 유출구는 상기 튜브형 가스 매니폴드 도관의 축에 대해 수직을 이루는 각도를 밑도는 소정의 각도로 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  2. 제 1 항에 있어서,
    상기 제 1 공급부의 상기 주입 포트들의 수와 상기 제 2 공급부의 상기 주입 포트들의 수는 동일하고, 상기 제 1 공급부의 상기 주입 포트들과 상기 제 2 공급부의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 상기 둘레를 따라 번갈아 배치되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  3. 제 1 항에 있어서,
    각각의 공급부의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 대해 0° 내지 45°의 각도에서 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  4. 제 1 항에 있어서,
    상기 튜브형 가스 매니폴드 도관은 상기 제 1 축 방향 포지션의 하류에서의 제 1 지름, 및 상기 제 1 축 방향 포지션에서의 제 2 지름을 갖고,
    상기 제 2 지름은 상기 제 1 지름보다 작은, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  5. 제 1 항에 있어서,
    상기 제 1 공급부는 반응 가스를 제공하는 가스 소스에 연결되고, 상기 제 2 공급부는 불활성 가스를 제공하는 가스 소스에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  6. 제 1 항에 있어서,
    상기 가스 공급부들은 하부 가스 공급부들로서 역할을 하고,
    상기 가스 주입구 시스템은, 상부 가스 공급부들을 더 포함하며,
    상기 상부 가스 공급부들은 제 3 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 3 공급부 및 제 4 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 4 공급부를 포함하며,
    상기 상부 가스 공급부들의 각각은 상기 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지며,
    제 2 축 방향 포지션은 상기 제 1 축 방향 포지션의 상류에 위치되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  7. 제 6 항에 있어서,
    상기 튜브형 가스 매니폴드 도관은 상기 제 1 축 방향 포지션의 하류에서의 제 1 지름, 상기 제 1 축 방향 포지션에서의 제 2 지름, 및 상기 제 2 축 방향 포지션에서의 제 3 지름을 갖고,
    상기 제 3 지름은 상기 제 1 지름보다 작은 상기 제 2 지름보다 작은, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  8. 제 6 항에 있어서,
    상기 제 3 공급부는 상기 제 3 가스의 유입을 위한 유입구와 상기 제 3 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 3 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고,
    상기 제 4 공급부는 상기 제 4 가스의 유입을 위한 유입구와 상기 제 4 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 4 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  9. 제 6 항에 있어서,
    상기 제 3 및 제 4 공급부들 각각의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 대해 0° 내지 45°의 각도에서 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  10. 제 9 항에 있어서,
    상기 제 3 및 제 4 공급부들 각각의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 평행하게 상기 튜브형 가스 매니폴드 도관에 연결되고, 상기 제 1 및 제 2 공급부들 각각의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 대해 15° 내지 25°의 각도에서 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  11. 제 1 항에 있어서,
    보조 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 상단 공급부를 더 포함하며, 상기 상단 공급부는 상기 튜브형 가스 매니폴드 도관의 상류 말단에서 상기 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  12. 제 11 항에 있어서,
    상단 공급부가 건조 가스를 제공하는 가스 소스에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  13. 제 1 항에 있어서,
    상기 웨이퍼 프로세싱 반응기는 원자 층 증착 (ALD) 을 위한 반응기 또는 화학 기상 증착 (CVD) 을 위한 반응기이고, 상기 튜브형 가스 매니폴드 도관은 ALD 또는 CVD를 위해 상기 반응기의 가스 주입구 포트에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  14. 제 13 항에 있어서,
    상기 튜브형 가스 매니폴드 도관은 상기 가스 주입구 포트를 상기 웨이퍼 프로세싱 반응기의 웨이퍼 수용 영역 위쪽에서 중앙에 배치하도록 되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.
  15. 제 1 항에 기재된 가스 주입구 시스템을 사용하여 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법으로서,
    제 1 가스를 제 1 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하는 한편, 제 2 가스를 제 2 공급부의 상기 주입 포트들을 통해 상기 튜브형 가스 매니폴드 도관으로 공급하며, 이로 인해 상기 제 1 가스 및 상기 제 2 가스가 상기 튜브형 가스 매니폴드 도관 내부에서 혼합되는 단계; 및
    상기 웨이퍼 프로세싱 반응기에 로드된 기판 상에 필름을 증착하기 위해 혼합된 상기 가스를 상기 가스 주입구 시스템을 통해 상기 웨이퍼 프로세싱 반응기로 공급하는 단계를 포함하는, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.
  16. 제 15 항에 있어서,
    상기 튜브형 가스 매니폴드 도관은 상기 튜브형 가스 매니폴드 도관의 상류 말단에서 상기 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는 상단 공급부를 더 포함하며,
    상기 방법은, 불활성 가스를 상기 상단 공급부의 상기 주입 포트를 통해 상기 튜브형 가스 매니폴드 도관으로 공급하면서 상기 튜브형 가스 매니폴드 도관에 상기 제 1 및 제 2 가스들을 공급하는 단계를 더 포함하며, 상기 제 1 및 제 2 가스들 중 하나는 공정 가스인, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.
  17. 제 16 항에 있어서,
    상기 필름은 제 1 조건들 하에서 증착되고,
    상기 방법은, 상기 제 1 조건들 하에서 증착된 상기 필름의 균일도에 비해 필름의 개선된 균일도를 갖는 필름을 기판 상에 증착하기 위해서, 상기 상단 공급부로부터의 상기 불활성 가스의 흐름 율을 변경하면서 상기 불활성 가스의 상기 흐름 율을 제외한 상기 제 1 조건들을 유지하는 단계를 더 포함하는, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.
  18. 제 15 항에 있어서,
    상기 가스 공급부들은 하부 가스 공급부들로서 역할을 하고,
    상기 가스 주입구 시스템은 제 3 공급부 및 제 4 공급부를 포함하는 상부 가스 공급부들을 더 포함하며,
    상기 상부 가스 공급부들의 각각은 상기 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖고,
    제 2 축 방향 포지션은 상기 제 1 축 방향 포지션의 상류에 위치되며,
    상기 방법은, 제 3 가스 및 제 4 가스를 상기 제 3 공급부 및 상기 제 4 공급부의 상기 주입 포트들을 통해 각각 상기 튜브형 가스 매니폴드 도관으로 공급하면서 상기 튜브형 가스 매니폴드 도관으로 상기 제 1 및 제 2 가스들을 공급하는 단계를 더 포함하며, 상기 제 1 및 제 2 가스들 중 하나는 공정 가스인, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.
  19. 삭제
  20. 삭제
KR1020150025314A 2014-02-25 2015-02-23 가스 공급 매니폴드와 그것을 사용하여 가스들을 챔버로 공급하는 방법 KR102313335B1 (ko)

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