JPS6248023A - Clothless polishing method of semiconductor wafer - Google Patents
Clothless polishing method of semiconductor waferInfo
- Publication number
- JPS6248023A JPS6248023A JP60187514A JP18751485A JPS6248023A JP S6248023 A JPS6248023 A JP S6248023A JP 60187514 A JP60187514 A JP 60187514A JP 18751485 A JP18751485 A JP 18751485A JP S6248023 A JPS6248023 A JP S6248023A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- polishing
- plates
- polishing device
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上利用の範gfI)
本発明は半導体ウェハ、シリコン、GGG等のワーク(
被加工物)をポリッシングする方法に関するものである
。[Detailed description of the invention] (Scope of industrial usegfI) The present invention is applicable to workpieces such as semiconductor wafers, silicon, GGG, etc.
The present invention relates to a method of polishing a workpiece.
(従来例の構成と問題点)
従来のポリッシング装置には上プレート下面と下プレー
ト上面との間へワークを挟圧してポリッシングするため
に、夫々のプレートの加工面へ1m〜1.51程度の厚
みを有した柔軟な材質のクロス、バット、ウレタン皮膜
等を接着又は他の方法で固着、或は、形成し、加工を施
すために、面ダレ、縁ダレと云われるワークの縁部が研
磨され過ぎて角丸となり、有効面積が少くなる為に、や
といと称されるワークの周囲に同じ高さのダミーを用い
て外周を囲ってポリッシングしていた。(Structure and problems of conventional example) In order to polish the workpiece by pressing it between the lower surface of the upper plate and the upper surface of the lower plate, the conventional polishing device has a width of about 1 m to 1.51 mm on the processing surface of each plate. In order to adhere or form thick, flexible materials such as cloth, batts, urethane films, etc. by gluing or other methods, the edges of the workpiece, known as surface sagging and edge sagging, are polished. Because of this, the corners become rounded and the effective surface area decreases, so a dummy of the same height was used around the workpiece for polishing.
又、クロスとワークとの摩擦抵抗が高いため発熱してワ
ークが高温と成り歪みが発生する原因となるために、冷
却が必要となり、冷却水を上プレートと下プレートに夫
々に循環させる冷却水用設備を内設けなければ成らず、
又、クロスが使用する経時と共に劣化する為に張り替え
が必要となったり数々の問題点を有していた。In addition, the high frictional resistance between the cloth and the workpiece generates heat, causing the workpiece to reach a high temperature and cause distortion, so cooling is required. This cannot be achieved without providing internal equipment for
In addition, the cloth deteriorates over time, necessitating replacement, and has many other problems.
(発明の目的)
本発明の目的は前記問題点に鑑みて各問題点を解消した
もので、ポリッシング装置よりクロスを排除した画期的
なポリッシング方法の提供である。(Object of the Invention) An object of the present invention is to solve each of the problems in view of the above-mentioned problems, and to provide an innovative polishing method that eliminates cloth from a polishing device.
(発明の構成)
半導体ウェハのポリッシング装置に用いられているクロ
スを排除したポリッシング装置であり、上プレート1の
下面2と下プレート3の上面4との間へワーク5を挟圧
してポリッシングする、ポリッシング装置の上プレート
1又は下プレート2、及び、上下両方のプレート1.2
を超微粒子砥石プレート、樹脂プレート、樹脂を媒体と
した金属及びアルミナプレート、軟質金属プレート、軟
質セラミック、ピッチ、タール、油等の油脂プレートの
いずれか一つのプレートを用いて、研磨剤として炭酸ガ
ス等の気体を多発させる発泡性の高い液状体、又は、低
粘液状体のものを用いてクロスレス成してポリッシング
する構成である。(Structure of the Invention) This polishing device eliminates the cloth used in polishing devices for semiconductor wafers, and performs polishing by pressing the workpiece 5 between the lower surface 2 of the upper plate 1 and the upper surface 4 of the lower plate 3. Upper plate 1 or lower plate 2 of the polishing device and both upper and lower plates 1.2
Using one of the following plates: an ultrafine grinding wheel plate, a resin plate, a metal and alumina plate using resin as a medium, a soft metal plate, a soft ceramic, a pitch, tar, oil plate, etc., and carbon dioxide gas as an abrasive. This is a configuration in which crossless polishing is performed using a highly foaming liquid material that generates a large amount of gas, or a low viscosity liquid material.
(実施例の説明) 本発明を以下図面に基づいて説明する。(Explanation of Examples) The present invention will be explained below based on the drawings.
図面は片面ポリッシング装置のもので第1図は従来例の
側面図であり、第2図は本発明の実施例の側面図である
。The drawings are of a single-sided polishing apparatus, with FIG. 1 being a side view of a conventional example, and FIG. 2 being a side view of an embodiment of the present invention.
半導体ウェハのポリッシング装置に用いられているクロ
スを排除したポリッシング装置であり、片面ポリッシン
グ装置の上プレート1の下面2ヘワーク5をバキューム
吸着、又は、他の方法で固着して、下プレート3の上面
4との間へ挟圧されてポリッシングする、ポリッシング
装置の下プレート3を超微粒子砥石プレート、樹脂プレ
ート、樹脂を媒体とした金属及びアルミナプレート、軟
質金属プレート、軟質セラミック、ピッチ、タール、油
等の油脂プレートを材質としたいずれか一つのプレート
とし、研磨剤として炭酸ガス等の気体を多発させる発泡
性の高い液状体、又は、低粘液状体のものを用いてポリ
ッシングするクロスレスと成したポリッシング装置であ
る。This polishing device eliminates the cloth used in polishing devices for semiconductor wafers, and the workpiece 5 is fixed to the lower surface 2 of the upper plate 1 of the single-sided polishing device by vacuum suction or other methods, and the upper surface of the lower plate 3 is fixed. The lower plate 3 of the polishing device is pressed between the lower plate 3 of the polishing device and the lower plate 3 of the polishing device, which is pressed between the lower plate 3 of the polishing device and the lower plate 3 of the polishing device. The plate is made of any one of the oil and fat plates of the above, and a highly foaming liquid that generates a large amount of gas such as carbon dioxide as an abrasive, or a low viscous liquid is used for crossless polishing. It is a polishing device.
本発明は回転軸6を軸着する上プレート1の下面2には
有孔物質、又は、小孔を多数穿設してあり、バキューム
吸着等によって、ワーク5を固着して、加工中に自回転
できように構成してあり、下プレー1〜3は上面4は平
坦状に形成して下方辺には必要に応じて回転可能な軸7
で平坦度を保持し軸着されており、適宜な方法で研磨剤
をワークへ提供するものである。In the present invention, the lower surface 2 of the upper plate 1 on which the rotary shaft 6 is attached is made of a porous material or has a large number of small holes, and the workpiece 5 is fixed by vacuum suction or the like, and the workpiece 5 is automatically attached during machining. The lower plays 1 to 3 have a flat upper surface 4 and a shaft 7 on the lower side that can be rotated as required.
The abrasive is provided to the workpiece by an appropriate method.
第1図図示の如く、従来例においては下プレート3の上
面4へ、クロス、バット、ウレタン皮膜等Aを接着等の
方法を用いて、固着されており上プレート1の下面2ヘ
バキユ一ム吸着されたワーク5をポリッシングする方法
が用いられている。As shown in FIG. 1, in the conventional example, a cloth, batt, urethane film, etc. A is fixed to the upper surface 4 of the lower plate 3 using a method such as gluing, and the lower surface 2 of the upper plate 1 is adsorbed. A method is used in which the workpiece 5 that has been polished is polished.
しかし、前述の如く、多数の問題点、欠点、煩わしさが
共有するので、鋭意研錯の結果第2図に図示の如く、ク
ロスレスのポリッシング方法に到達してものである。However, as mentioned above, they share many problems, drawbacks, and troubles, and as a result of intensive research, a crossless polishing method as shown in FIG. 2 has been arrived at.
本発明は下プレート3を超微粒子砥石プレート、樹脂プ
レート、樹脂を媒体とした金属及びアルミナプレート、
軟質金属プレート、軟質セラミック、ピッチ、タール、
油等の油脂プレートのいずれか一つのプレートを用いて
ポリッシングするものであるが、材質は前記いずれの材
質を用いても構わないものであり、任意の方法、例えば
、供給装置。In the present invention, the lower plate 3 can be an ultrafine particle grindstone plate, a resin plate, a metal plate using resin as a medium, an alumina plate, etc.
Soft metal plate, soft ceramic, pitch, tar,
Polishing is performed using any one of the oil plates, such as oil, but any of the above-mentioned materials may be used, and any method may be used, for example, a supply device.
或は、手持器具等で供給する研磨剤は炭酸ガス等の気体
を多量に発生させる事のできる発泡性の高い液体状、又
は、低粘液体状のものを用いることによって、ワーク5
の加工面と下プレート3上面4との間に多数の小泡を含
む低粘性の多泡のクリーム状と成った研磨剤が入り込ん
で、ワーク5の加工面をポリッシングするもので、全く
クロスを必要としないポリッシング方法である。研磨剤
は研磨中は含多泡クリーム状となっているので上プレー
トの回転によって生じる遠心力にも飛散しないものであ
る。Alternatively, the polishing agent supplied with a hand-held tool may be a highly foaming liquid that can generate a large amount of gas such as carbon dioxide, or a low-viscosity liquid.
A low-viscosity multifoam cream-like abrasive containing many small bubbles enters between the machined surface of the workpiece 5 and the upper surface 4 of the lower plate 3, polishing the machined surface of the workpiece 5. This is a polishing method that does not require polishing. Since the abrasive is in the form of a foam-containing cream during polishing, it will not be scattered by the centrifugal force generated by the rotation of the upper plate.
前記の説明は片面ポリッシング装置での説明であるが、
両面ポリッシング装置に於てもワークを加工する両面、
即ち、上プレート、及び、下プレートの夫々を前述の材
質のプレートを用いて、前述の研磨剤でポリッシングし
ても本発明の効果は変わらないものである。The above explanation is for a single-sided polishing device, but
Double-sided polishing equipment processes both sides of the workpiece,
That is, even if the upper plate and the lower plate are each made of the above-mentioned material and polished with the above-mentioned abrasive, the effects of the present invention do not change.
(発明の効果)
本発明の効果はクロスレスと成したことで生じ、各プレ
ートの加工面へのクロス等の固着、煩わしい張り替えを
不要とし、面ダレ、縁ダレを防止し、従って、ダミー、
やといを不要とし、ワークの有効面積を最大限まで拡大
でき、平面精度を著しく向上させて、摩擦熱による発熱
を少なくシ、冷却水を不要となすために上下の各プレー
トに設ける冷却装置を不要と成して、ポリッシング装置
そのものの構造も簡略化が計れる等数々の長所、特長を
有する画期的で実用性の高いものである。(Effects of the Invention) The effects of the present invention arise from the fact that it is clothless, which eliminates the need for fixing cloth etc. to the machined surface of each plate and troublesome re-covering, prevents surface sagging and edge sagging, and thus prevents dummy,
It eliminates the need for Yato, expands the effective area of the workpiece to the maximum, significantly improves flatness accuracy, reduces heat generation due to frictional heat, and eliminates the need for cooling water by providing a cooling device for each upper and lower plate. It is an innovative and highly practical device that has many advantages and features, such as being unnecessary and simplifying the structure of the polishing device itself.
第1図は従来例の要部の側面図であり、第2図は本発明
の実施の要部の側面図である。
1・・・上プレート、2・・・上プレート下面、3・・
・下プレート、4・・・下プレート上面、5・・・ワー
ク、6・・・回転軸、7・・・軸。
A・・・クロス。FIG. 1 is a side view of the main parts of the conventional example, and FIG. 2 is a side view of the main parts of the embodiment of the present invention. 1... Upper plate, 2... Lower surface of upper plate, 3...
- Lower plate, 4... Upper surface of lower plate, 5... Workpiece, 6... Rotating axis, 7... Axis. A...Cross.
Claims (1)
ッシング装置に用いられているクロスを排除したポリッ
シング方法であって、 上プレートの下面と下プレートの上面との間へワークを
挟圧してポリッシングする、ポリッシング装置の上プレ
ート、又は、下プレート、及び、上下両方のプレートを
超微粒子砥石プレート、樹脂プレート、樹脂を媒体とし
た金属及びアルミナプレート、軟質金属プレート、軟質
セラミック、ピッチ、タール、油等の油脂プレートのい
ずれか一つのプレートを用いて、研磨剤として炭酸ガス
等の気体を多発させる発泡性の高い液体状、又は、低粘
液体状の研磨剤を用いてポリッシングすることよって、
クロスレスと成したことを特徴とする半導体ウェハのク
ロスレスポリッシング方法。[Claims] A polishing method that eliminates the cloth used in a double-sided polishing device or a single-sided polishing device for semiconductor wafers, comprising: pressing a workpiece between the lower surface of an upper plate and the upper surface of a lower plate; The upper plate, lower plate, and both upper and lower plates of the polishing device are polished using ultrafine particle grindstone plates, resin plates, metal and alumina plates using resin as a medium, soft metal plates, soft ceramics, pitch, and tar. , by polishing using one of the oil plates and a highly foaming liquid abrasive that generates a large amount of gas such as carbon dioxide as an abrasive, or a low viscosity liquid abrasive. ,
A crossless polishing method for semiconductor wafers characterized by being crossless.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60187514A JPS6248023A (en) | 1985-08-28 | 1985-08-28 | Clothless polishing method of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60187514A JPS6248023A (en) | 1985-08-28 | 1985-08-28 | Clothless polishing method of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6248023A true JPS6248023A (en) | 1987-03-02 |
Family
ID=16207402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60187514A Pending JPS6248023A (en) | 1985-08-28 | 1985-08-28 | Clothless polishing method of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6248023A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0234925A (en) * | 1988-04-20 | 1990-02-05 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0620618U (en) * | 1992-08-24 | 1994-03-18 | 東邦亜鉛株式会社 | Soundproof structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5373067A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Polisher |
JPS58223332A (en) * | 1982-06-18 | 1983-12-24 | ワツカ−・ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク・グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング | Method of polishing indium phosphide surface |
JPS5922329A (en) * | 1982-07-29 | 1984-02-04 | Nec Corp | Polisher for polishing of semiconductor wafer |
-
1985
- 1985-08-28 JP JP60187514A patent/JPS6248023A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5373067A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Polisher |
JPS58223332A (en) * | 1982-06-18 | 1983-12-24 | ワツカ−・ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク・グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング | Method of polishing indium phosphide surface |
JPS5922329A (en) * | 1982-07-29 | 1984-02-04 | Nec Corp | Polisher for polishing of semiconductor wafer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0234925A (en) * | 1988-04-20 | 1990-02-05 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0620618U (en) * | 1992-08-24 | 1994-03-18 | 東邦亜鉛株式会社 | Soundproof structure |
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