JPH1126405A - Polishing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make abrasive powder to be supplied evenly and sufficiently between a work and a polishing tool while the polishing tool polishes the surface to be polished of the work, by supplying the abrasive powder to the surface to be polishing while contacting states and non-contacting states are repetitively maintained between the polishing tool and work. SOLUTION: Abrasive powder (slurry) 23 is held in spaces F1 formed of a work (wafer) 10 and the recessed sections of a polishing tool (polishing pad) 11. The slurry gets in the parts where the projection sections on the polishing surface of the pad 11 substantially come into contact with the surface to be polished of the wafer 10. As the pad 11 is rotated, the slurry 23 near the center of rotation of the pad 11 between the wafer 10 and the pad 11 becomes rougher, and the slurry 23 near the outer periphery of the pad 11 becomes finer. Therefore, a slurry supplying means supplies the slurry 23 to the spaces F2 between the wafer 10 and the pad 11, while a reciprocatory moving means 19 moves the pad 11 upward. When the slurry 23 is supplied, the pad 11 is continuously rotated in the same manner as the initial state (a).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus and a polishing method for polishing a surface of a substrate such as a wafer with high precision.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have become ultra-miniaturized and highly stepped, and accordingly, SOI substrates, Si, GeAs, InP
A chemical mechanical polishing (CMP) apparatus is used as a processing means for polishing a semiconductor wafer formed of a semiconductor integrated circuit, a wafer having an insulating film or a metal film on a surface thereof, and a display substrate with high precision. Are known.

Here, a conventional CMP apparatus will be described with reference to FIGS. 4 and 5. FIG. FIG. 4 shows a state in which a wafer 1 to be processed is held by a wafer holder 3 with its surface to be polished facing downward, and the wafer 1 is polished using a polishing pad 2 made of, for example, polyurethane having a diameter larger than the diameter of the wafer 1. Is a form of polishing. This polishing pad 2
Has mainly irregularities on its surface or is porous. In FIG. 4, the wafer 1 is rotated in the direction indicated by the arrow by driving means (not shown). The polishing pad 2 is rotated in a direction indicated by an arrow by driving means (not shown). The surface to be polished of the wafer 1 that is in contact with the wafer 1 and the polishing pad 2 is polished by the rotation of the wafer 1 and the polishing pad 2 or the rotation of one of them. At this time, an abrasive (slurry) is supplied from the slurry supply means 5 for the purpose of improving the polishing amount. The slurry is, for example, an aqueous alkaline solution in which fine particles of SiO _{2 on} the order of microns to sub-microns are stably dispersed. In FIG. 6, the slurry is composed of a wafer 1 and a polishing pad 2.
Supplied from outside.

FIG. 5 shows a mode in which a polishing pad 2 having a diameter smaller than the diameter of the wafer 1 is held by a polishing pad holder 6 and the wafer 1 held with the surface to be polished facing upward is polished.

At this time, the slurry is supplied between the wafer 1 and the polishing pad 2 through the small holes 7 from slurry supply means (not shown) communicating with the small holes 7 provided in the polishing pad.

[0006]

However, in the above-mentioned conventional CMP apparatus, there is a problem that a sufficient amount of slurry is not held between the wafer 1 and the polishing pad 2.
This is because a centrifugal force is generated when the wafer 1 and / or the polishing pad 2 rotate, and as a result, the slurry supplied between the wafer 1 and the polishing pad 2 is pushed out.

More specifically, in the case of the conventional CMP apparatus shown in FIG. 4, since the slurry is supplied from the outside between the wafer 1 and the polishing pad 2, the slurry is rotated by the rotating wafer 1 and the polishing pad. It is difficult to penetrate between the two. In the case of the conventional CMP apparatus shown in FIG. 6, the slurry is initially supplied between the wafer 1 and the polishing pad 2 because the slurry is supplied from the small holes 7, but the slurry is supplied between the wafer 1 and the polishing pad 2 by centrifugal force. They go outside from between the two.

As a result, the prior art shown in FIGS.
In the CMP apparatus, polishing is performed without holding a sufficient amount of slurry between the wafer 1 and the polishing pad 2.
As a result, the polishing amount is reduced. Therefore, even if a new slurry is supplied to maintain a high polishing amount, the amount of slurry held between the wafer 1 and the polishing pad 2 decreases again,
As a result, the polishing amount decreases again. Further, the remaining slurry is often localized between the wafer 1 and the polishing pad 2, and if the polishing is performed as it is, so-called polishing unevenness occurs.

Further, the surface to be polished of the wafer 1 can be kept wet by holding a sufficient amount of the slurry on the surface of the wafer 1, but a sufficient amount of the slurry can be kept on the surface to be polished of the wafer 1. If not held, the polished surface of the wafer 1 is likely to be in a dry state.

As a result, the polishing debris generated during polishing is unexpectedly adsorbed on the surface to be polished of the wafer 1. For example, fine particles as a slurry component, particularly fine particles of SiO ₂ and fine particles of Ce, are extremely easily adsorbed to the wafer 1 made of Si, and the fine particles once adsorbed cannot be easily removed from the wafer 1.

[0011] Further, the above-mentioned polishing debris aggregates with itself or fine particles as a slurry component in a dry state to form a large aggregate. If the polishing is performed without sufficiently removing the agglomerates from the surface of the wafer 1, unexpected scratches may occur.

If a sufficient amount of slurry is not held between the wafer 1 and the polishing pad 2, frictional heat is generated during polishing, and the heat is generated when the surface to be polished of the wafer 1 has semiconductor elements. A phenomenon occurs in which the surface of the semiconductor device is thermally modified and the electrical characteristics of the semiconductor device deteriorate.

When the rotation speed of the wafer 1 or the polishing pad 2 is increased in order to increase the polishing amount or to improve the productivity, the above-mentioned centrifugal force acts more. Almost no residue is left between the pad 2. Further, the above-mentioned unexpected frictional heat is further generated.

As described above, if the slurry is not held between the wafer 1 and the polishing pad 2 in a sufficient amount, various unexpected phenomena occur, and as a result, the quality of the wafer is deteriorated.

In particular, when the surface to be polished is an expensive substrate for a highly integrated circuit such as a microprocessor or a display substrate made of a thin film semiconductor, it is urgently necessary to reduce the production cost to improve the yield.

As a solution to these problems, in the prior art, an unnecessary amount of slurry is continuously supplied during polishing. However, as a result, a large burden is imposed on costs.

Further, the conventional wafer has a diameter of 6 mm.
Inch, but in the future the wafer diameter will increase,
12 inches or more. Since the consumption of the slurry increases with the increase in the diameter of the wafer, it is necessary to newly examine a means and a method for efficiently supplying the slurry.

The present invention has been made in view of such problems in the prior art, and provides a means or a method for maintaining a sufficient amount of slurry between a wafer and a polishing pad.

[0019]

SUMMARY OF THE INVENTION Accordingly, the present invention provides a workpiece holding means for holding a workpiece, a polishing tool, and a method of vertically moving a polishing surface of the workpiece and a polishing surface of the polishing tool. A pressurizing means for applying a predetermined pressure to the workpiece and bringing the workpiece into contact with the workpiece; and a driving means for rotating at least one of the workpiece and the polishing tool. Means for reciprocating at least one of the workpiece and the polishing tool in a vertical direction to repeatedly contact or non-contact the polished surface of the workpiece and the polishing surface of the polishing tool. An abrasive is supplied to the surface to be polished while the workpiece and the polishing tool repeat contact and non-contact states, and the polishing tool grinds the surface to be polished of the workpiece. Characteristic polishing It is the location.

Further, the present invention provides that the workpiece and / or the polishing tool rotate, and that the polished surface of the workpiece and the polished surface of the polishing tool come into contact with each other at a predetermined pressure. In the polishing method of polishing the surface to be polished, the surface to be polished of the workpiece and the polishing surface of the polishing tool repeat contact and non-contact state and the polished surface of the workpiece and A polishing method, characterized in that a polishing agent is supplied between the polishing tool and the polishing surface to polish the polishing surface of the workpiece.

(Operation) According to the present invention, the interval between the workpiece and the polishing tool can be repeatedly narrowed or widened during polishing. That is, when the gap is wide, the abrasive easily enters the gap, and as a result, a sufficient amount of the abrasive is stably supplied to the surface to be polished of the workpiece. Similarly, a sufficient amount of abrasive is stably supplied to the surface to be polished by reducing the pressure at which the workpiece and the polishing tool are brought into contact.

[0022]

Embodiments of the present invention will be described below.

(First Embodiment) As shown by reference numerals a to c in FIG. 1, a first embodiment of the present invention relates to a workpiece held by workpiece holding means (wafer chuck 16). The (wafer 10) faces the polishing pad 11 having an uneven surface on a polishing surface held by a polishing tool (a polishing pad holder 18 having a detachable polishing pad 11) having a driving means 24, and Polishing pad 11
In this embodiment, the gaps f1 and f2 are driven by means (reciprocating means 19) for changing the intervals f1, f2 in the order indicated by a, b1, and c. a
Indicates that the polishing pad 11 is in contact with the wafer 10 and rotates about the center of the polishing pad 11 in the direction indicated by the arrow D (rotation).
2 shows a state in which the wafer 10 is polished. At this time, the reciprocating means 19 also functions as a pressurizing means for applying a predetermined pressure when the wafer 10 and the polishing pad 11 come into contact with each other. In FIG. 1, the abrasive (slurry 2
3) is previously held at F1 between the wafer 10 and the concave portion of the polishing pad 11. And the slurry 2 held in F1
3 enters a portion where the surface to be polished of the wafer 10 and the convex portion of the polishing surface of the polishing pad 11 are substantially in contact with each other. f1 is the distance between the portion to be polished of the wafer 10 and the above-mentioned portion substantially in contact with the projection of the polishing surface of the polishing pad 11, that is, the distance is substantially zero. As the polishing time elapses with the rotation of the polishing pad 11, the polishing pad 1 is moved between the wafer 10 and the polishing pad 11 as shown by an arrow E in FIG.
1 moves outward from the center of rotation of the polishing pad 11, and as a result, the slurry 23 near the center of rotation of the polishing pad 11 becomes coarse while the slurry 23 near the outer periphery of the polishing pad 11 becomes dense. As described above, if polishing is continued for a long time in the state indicated by a, the problems such as uneven polishing and unexpected scratches occur as described above. Therefore, the process proceeds to the next step before the above problem occurs. Wafer 1 at that time
The figure showing the state of 0 and the polishing pad 11 is b1.

B1 indicates that the reciprocating means 19 is the polishing pad 1
By moving the wafer 1 upward, the space f2 between the wafer 10 and the polishing pad 11 becomes larger than the space f1, and the slurry 23 is supplied to the space F2 between the wafer 10 and the polishing pad 11 by slurry supply means (not shown). FIG. In this case, the wafer 10 and the polishing pad 1
1 is non-contact in the whole area. At this time, the space F2 between the wafer 10 and the polishing pad 11 is quickly filled with the slurry 23. At this time, the polishing pad 11 keeps rotating similarly to the state indicated by a.

The symbol c indicates a state in which the wafer 10 and the polishing pad 11 indicated by b1 are brought into contact again by the reciprocating means 19 and polishing is performed. At this time, the slurry 23
Are uniformly distributed without being localized at F1 between the wafer 10 and the polishing pad 11, and the wafer 10 is polished again. Thereafter, when polishing continues, the wafer 10 and the polishing pad 11 return to the state indicated by a, and after a predetermined time elapses, the state returns to b1 and then a series of states is repeated to reach the state indicated by c. In addition, in the first embodiment of the present invention, the wafer 10 and the polishing pad 11 are in the state shown by b1 for the purpose of promptly filling the slurry 23 with F2 between the wafer 10 and the polishing pad 11, More preferably, the wafer 10 and the polishing pad 11 are not in contact with each other. The polishing pad 11 may be made of a material having a high elastic modulus.
When the pressure is repeatedly applied in the vertical direction, the slurry 23 is quickly and uniformly supplied between the wafer 10 and the concave portion of the polishing pad 11 even if the wafer 10 and the polishing pad 11 do not come into non-contact over the entire surface. Alternatively, a sufficient amount of the slurry 23 can be supplied to the entire surface to be polished of the wafer 10 by repeatedly increasing and decreasing the thickness of the polishing pad 11 by changing the pressing force as shown by b2.

In the present invention, as described in the first embodiment, a structure for driving the polishing pad holder 18 having the polishing pad 11 as the driving means 24 and the reciprocating means 19 can be used.
The wafer chuck 16 holding the wafer may be rotated and vertically reciprocated, or the polishing pad holder 18 and the wafer chuck 16 may be rotated together and vertically reciprocated.

The reciprocating means 19 may be a fluid pressure control means comprising a hydraulic or pneumatic cylinder, or a hard elastic member such as a spring.

If the reciprocating means 19 does not apply a large load to the third driving means 14, the reciprocating means 19
It is preferable that the setting position is set on the polishing pad holder 18 so as to be rotated by the third driving means 14 together with the polishing pad holder 18.

Further, in the present invention, as described in the first embodiment, the above-described configuration in which the polishing pad 11 rotates in the horizontal direction as the horizontal movement can be used. A revolving motion rotating around an axis different from the rotation axis or a swinging motion in the horizontal direction can be used together. In addition, a driving device may be provided on the wafer holder 17 to perform the above-described movements. The opposing wafer 10 and polishing pad 1
It is also possible to rotate the eccentric 1 without eccentricity.

In the present invention, the wafer 10 and the polishing pad may be arranged such that the surface to be polished of the wafer 10 faces downward and the polishing surface of the polishing pad 11 faces upward.

In the present invention, as a means for fixing the wafer 10, a guide ring or a vacuum chuck for adsorbing the back surface of the wafer 10 to the wafer chuck 16 using a pressure reducing device can be used. Further, it is also preferable to fix the back surface of the wafer to the wafer chuck 16 via a backing material using a member having a high friction coefficient, wax or pure water.

Further, in the present invention, the magnitude relationship between the wafer 10 and the polishing pad 11 may be larger or smaller than the polishing pad 11. After examining the magnitude relationship between the wafer 10 and the polishing pad 1,
It is preferable that both of the shapes 1 are substantially circular and the polishing pad 11 has a large diameter with respect to the wafer 10. More preferably, the ratio of the diameter of the polishing pad 11 to the diameter of the wafer 10 is 1 or more and less than 2.

When the diameter ratio is less than 1, that is, when the diameter of the polishing pad 11 is smaller than that of the wafer 10, polishing is performed while moving the polishing pad 11 over the entire surface of the wafer 10 to be polished. Alternatively, if a plurality of polishing pads 11 are used so as to cover the entire surface to be polished of the wafer 10, the entire surface can be polished. Since only a local part of the entire surface of the wafer 10 can be specified and polished, it can be applied to the correction polishing of a once polished wafer.

In the present invention, the slurry 23 can be supplied from the outer periphery of the wafer 10 by the slurry supply means or by providing a small hole at the center of the polishing pad to radiate the slurry from the center of the wafer 10 to the outer periphery. 23 is provided. In the latter supply method, since the slurry moves radially in accordance with the centrifugal force of the rotating polishing pad 11, the slurry 23
Is more preferable in that it can supply

The polishing pad 11 is made of, for example, polyurethane, and the polyurethane may be foamed polyurethane, porous polyurethane, or high-density and high-rigidity polyurethane. Alternatively, the polishing pad 11
May be made of Teflon.

The abrasive used in the present invention may be, for example, only fine particles of silica (SiO ₂ ), alumina (Al ₂ O ₃ ), manganese oxide (MnO ₂ ), cerium oxide (CeO) or the like. Examples thereof include those dispersed in a liquid containing sodium hydroxide (NaOH), potassium hydroxide (KOH), hydrogen peroxide (H ₂ O ₂ ), and the like. For example, if the constituent element of the object to be polished is Si, SiO ₂ , a slurry in which fine particles such as CeO are dispersed, and if the constituent element of the object to be polished is a metal such as Al, Cu, and W, Al ₂ O ₃ , It is more preferable to use a slurry in which MnO ₂ fine particles are dispersed.

The particle size of the fine particles is about 8 nm to 50 nm.
More preferably, the particle size distribution is relatively uniform in nm.

In particular, when manganese oxide is used as the polishing fine particles, it is not necessary to disperse the manganese oxide fine particles in a liquid. I do not care.

The workpiece to be polished according to the present invention includes, for example, a substantially circular SOI substrate, Si, GeAs,
Examples include a semiconductor wafer made of nP or the like, a wafer having an insulating film or a metal film on the surface in the process of forming a semiconductor integrated circuit, or a square display substrate having a layer to be polished on the surface.

(Second Embodiment) FIG. 2 shows a CMP apparatus according to a second embodiment. This device is used for wafer 1
A wafer holder 17 having a wafer chuck 16 for holding the wafer 0 with its polished surface facing up;
First drive means 12 for rotating wafer 10
Second driving means 13 for swinging a wafer comprising a guide part and a power part, third and fourth driving means 14 and 15 for rotating the polishing pad 11,
Reciprocating means 19 for vertically moving the polishing pad 11 and pressing against the wafer 10, slurry supplying means 20 for supplying slurry, and pressure when the reciprocating means 19 presses the polishing pad 11 against the wafer 10. And a polishing pad holder 18 for holding a polishing pad 11 having a diameter equal to or larger than twice the diameter of the wafer 10 so as to face a surface to be polished of the wafer 11.
And

In this CMP apparatus, the wafer chuck 16 for holding the wafer 10 is rotated by the first driving means 12 in the direction shown by the arrow G, and the second driving means 1
3 swings in the direction indicated by the arrow H. The reciprocating means 19 electrically connected to the control device 21 reciprocates the polishing pad holder 18 having the detachable polishing pad 11 up and down, and the polishing pad 11 repeats contact and non-contact with the wafer 10. At this time, the polishing pad 11 and the wafer 10 abut against each other at an arbitrary pressure previously input by the control device 21, and the above-described contact and non-contact are repeated at an arbitrary time previously input to the control device 21. Further, the control device 21 can control the distance between the wafer 10 and the polishing pad 11 in a non-contact state. The third driving means 14 rotates the polishing pad 11 in the direction indicated by the arrow I.

The fourth driving means 15 revolves the polishing pad 11 in the direction indicated by the arrow J. By rotating the polishing pad 11 about two different rotation axes in this way, the polishing pad 11 rotates and revolves.

The slurry is supplied between the wafer 10 and the polishing pad 11 through a small hole 22 provided in the polishing pad holder 18 communicating with the slurry supply means 20.

As described above, the wafer 10 and the polishing pad 11
The slurry supplied from the small holes 22 is efficiently supplied to the entire region between the wafer 10 and the polishing pad 11 by repeating contact and non-contact between the wafer 10 and the wafer 10 while ensuring the polishing amount per predetermined time. Can be polished without damaging the surface.

The directions of rotation of the wafer 10 and the polishing pad 11 by the first, third and fourth driving means 12, 14 and 15 are not necessarily in the directions indicated by arrows, but can be arbitrarily rotated. You can decide the direction. Further, the number of rotations may be arbitrarily determined. The rotation speed can be selected in a range from several rpm to several thousand rpm.
As a result of a detailed study by the present inventor, the rotation direction and rotation speed of the wafer 10 and the polishing pad 11 by the first, third and fourth driving means 12, 14, and 15 are all in the same direction and the same rotation speed. Has been found to be more preferable for flattening the polished surface of the wafer. It was also found that when the number of rotations was set to a specific number of rotations or more, the phenomenon that the wafer 10 was stuck to the polishing pad 11 when the polishing pad 11 was separated from the wafer 10 was reduced. For example, the rotation speed at this time is about 10 rpm or more.

The method for polishing a wafer according to the present invention will be described below.

FIG. 3 shows four states k, l, m, n, and k to k of the polishing pad 11 polishing the wafer 10 with time when the polishing apparatus described in the second embodiment is used. FIG. 9 is a schematic diagram illustrating a state where a distance between a wafer 10 and a polishing pad 11 changes in each state of n. Here, t represents the passage of time, and p represents the distance between the wafer 10 and the polishing pad 11.

First, in the state of k, the polishing pad 1
1 rotates and revolves while abutting on the wafer 10 under pressure. Polishing is performed in this manner. At this time, the slurry 23 indicated by the arrow supplied from the small holes 22 flows into the gap between the polishing pad 11 and the wafer 10. If the state of k is continued for a long time, uneven polishing or unexpected damage due to agglomerates may occur, so that the wafer 10 and the polishing pad 11 are separated as the next operation.

In the state 1, the rotating polishing pad 11 starts moving upward by a predetermined distance at time t 1, and the wafer 10 and the polishing pad 11 are separated from each other by a distance f 2 to be in a non-contact state. At this time, the polishing pad 11 keeps rotating and revolving similarly to the state of k. As a result, the slurry 23 quickly spreads over the entire region between the wafer 10 and the polishing pad 11. Furthermore, unnecessary polishing debris is removed from the surface to be polished of the wafer 10 by the spread of the slurry 23.

After the state l, the wafer 10 and the polishing pad 11 are moved to the state m, that is, the rotating polishing pad 11 starts moving downward at time t2, and comes into contact with the wafer 10 again. After that, the polishing pad 11 receives the pressing force, comes into contact with the wafer 10 again, and is rotated by itself to be polished.

This state is the state of n. The state of n is k
The state is the same.

By repeating the above-described polishing method, polishing can be performed without reducing the amount of polishing per predetermined time and without damaging the surface to be polished.

More specifically, if the time required to polish the wafer 10 is 1 minute, the polishing pad is not in contact with the wafer 10 several times during the 1 minute. Also, the time during which the polishing pad 11 and the wafer 10 are out of contact, that is,
The difference between t2 and t1 is a few seconds, which is the time required to supply a sufficient amount of slurry to the entire surface of the wafer 10 to be polished. Further, the distance f2 between the wafer 10 and the polishing pad 11 in the non-contact state is a distance that does not cause the rotating wafer 10 to fly out when not in contact, and is smaller than the thickness of the wafer 10, more specifically, 0. 0.2 to 0.8 mm.

It is desirable that the period of the vertical movement of the polishing pad 11 and the distance between the polishing pad 11 and the wafer 10 are set so as to be within the range of the target value of the polishing. Also,
By shortening the period of the vertical movement of the polishing pad 11 or increasing the movement distance of the polishing pad 11, the vertical movement of the polishing pad 11 greatly functions as a pump for distributing the slurry. Also in this case, unnecessary aggregates are effectively removed. Further, the present invention can be used for a modified polishing for specifying a portion to be further polished in a processing surface of a workpiece once polished, and polishing the portion. When the polishing pad 11 is made of a material having a large elastic modulus, the wafer 10 and the polishing pad 11 need not have a sufficient amount of slurry through a small gap even if the whole area is not in non-contact during the polishing. Are the wafer 10 and the polishing pad 11
Reach between. Therefore, similar effects can be obtained by repeatedly increasing and decreasing the pressure when the polishing pad 11 is brought into contact with the wafer 10 with time.

[0055]

According to the present invention, in a polishing apparatus for supplying an abrasive to a surface to be polished of a workpiece and polishing the surface to be polished of the workpiece with a polishing tool, Since the polishing is performed while the tool is repeatedly brought into contact with and not in contact with each other or while changing the pressing force, the polishing agent is uniformly and sufficiently supplied between the workpiece and the polishing tool during polishing. You. As a result, it is possible to perform polishing without scratching while securing a stable polishing amount per predetermined time.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating a first embodiment of the present invention.

FIG. 2 is a schematic diagram illustrating a second embodiment of the present invention.

FIG. 3 is a schematic diagram showing the supply of slurry, the vertical movement of the polishing pad, and the distance between the polishing pad and the wafer due to the vertical movement of the polishing pad over time in the method of polishing a wafer according to an embodiment of the present invention.

FIG. 4 is a schematic view illustrating one embodiment of a conventional chemical mechanical polishing apparatus.

FIG. 5 is a schematic view illustrating another embodiment of a conventional chemical mechanical polishing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10, 1 Wafer 11, 2 Polishing pad 12 1st drive means 13 2nd drive means 14 3rd drive means 15 4th drive means 16 Wafer chuck 18 Polishing pad holder 19 Reciprocating movement means 20, 5 Slurry supply means Reference Signs List 21 control device 22, 7 small hole 23 slurry 24 drive means 17, 3 wafer holder 4 polishing table 6 polishing pad holder

Claims (33)

[Claims] 1. A workpiece holding means for holding a workpiece, a polishing tool, and a predetermined pressure is applied by vertically opposing a polished surface of the workpiece and a polishing surface of the polishing tool. And a driving unit for rotating at least one of the workpiece and the polishing tool, and at least one of the workpiece and the polishing tool. Means for reciprocating one of the workpieces in a vertical direction to repeatedly contact or non-contact the surface to be polished of the workpiece and the polishing surface of the polishing tool, wherein the workpiece and the polishing tool are provided. A polishing agent is supplied to the surface to be polished while repeatedly keeping the surface in a non-contact state, and the surface to be polished of the workpiece is polished by the polishing tool. 2. The polishing apparatus according to claim 1, wherein the polishing tool is installed with the polishing surface facing down. 3. The polishing apparatus according to claim 1, wherein the polishing tool is installed with a polishing surface facing upward. 4. The polishing apparatus according to claim 1, wherein the polishing tool polishes the entire surface of the workpiece to be polished. 5. The polishing apparatus according to claim 1, wherein the polishing tool polishes only a part of the polished surface of the workpiece. 6. The polishing apparatus according to claim 1, wherein said polishing surface of said polishing tool is larger than said polishing surface of said workpiece. 7. The polishing apparatus according to claim 1, wherein the surface to be polished of the workpiece is substantially circular. 8. The polishing surface of the polishing tool is substantially circular, and the ratio of the diameter of the polishing surface of the polishing tool to the diameter of the polishing surface of the workpiece is in a range of 1 or more and less than 2. The polishing apparatus according to claim 7, wherein the polishing apparatus is provided. 9. The polishing apparatus according to claim 1, wherein the polishing surface of the polishing tool is smaller than the surface to be polished of the workpiece. 10. The polishing apparatus according to claim 9, wherein at least two polishing tools are provided. 11. The polishing apparatus according to claim 1, wherein the driving means rotates the polishing tool. 12. The polishing apparatus according to claim 11, wherein said driving means revolves said polishing tool. 13. The polishing apparatus according to claim 1, wherein said driving means rotates said workpiece holding means on its own axis. 14. The polishing apparatus according to claim 13, wherein said driving means revolves said workpiece holding means. 15. The polishing apparatus according to claim 1, further comprising swing means for swinging the polishing tool. 16. The polishing apparatus according to claim 1, further comprising swing means for swinging the workpiece. 17. The polishing apparatus according to claim 1, wherein said means causes one of the polishing tool and the workpiece to stand still and the other to reciprocate. 18. The polishing apparatus according to claim 1, wherein said means reciprocates both said polishing tool and said workpiece. 19. The polishing apparatus according to claim 1, wherein said means has at least one of an elastic member and a fluid pressure control means. 20. An electric signal which is electrically connected to the means, and which gives an electric signal to the means, and measures a distance between the polished surface of the workpiece and the polished surface of the polishing tool in a non-contact state. 2. The polishing apparatus according to claim 1, further comprising control means for arbitrarily setting. 21. A control means electrically connected to the pressurizing means, applying an electric signal to the pressurizing means, and arbitrarily setting a pressure for bringing the polishing tool into contact with the workpiece. The polishing apparatus according to claim 1, further comprising: 22. The polishing apparatus according to claim 1, wherein said polishing surface of said polishing tool has a small hole communicating with an abrasive supply means. 23. The polishing apparatus according to claim 1, wherein the polishing tool has a removable polishing pad and a pad holder for holding the polishing pad. 24. The object to be polished by rotating at least one of a workpiece and a polishing tool and contacting a polished surface of the object and a polished surface of the polishing tool with each other at a predetermined pressure. In the polishing method for polishing a surface, the polishing surface of the workpiece and the polishing surface of the polishing tool are repeatedly brought into contact and non-contact with each other, and the polishing surface of the workpiece and the polishing tool are A polishing method, characterized in that a polishing agent is supplied between the substrate and the polishing surface to polish the surface to be polished of the workpiece. 25. The workpiece according to claim 24, wherein the workpiece is one of a semiconductor substrate, an insulating substrate having a layer to be polished on the surface thereof, and a semiconductor substrate having a layer to be polished on the surface thereof. The polishing method as described above. 26. The polishing method according to claim 24, wherein the polishing agent comprises only fine particles. 27. The polishing method according to claim 26, wherein said fine particles include at least one of silicon oxide, aluminum oxide and manganese oxide. 28. The polishing method according to claim 24, wherein the polishing agent is a liquid containing fine particles. 29. The method according to claim 24, wherein after polishing the entire surface of the workpiece, the portion to be polished is further specified, and only the specified portion is polished again.
Polishing method described 30. A workpiece holding means for holding a workpiece, a polishing tool, and a predetermined pressure is applied by vertically opposing a polished surface of the workpiece and a polished surface of the polishing tool. And a driving unit for rotating at least one of the workpiece and the polishing tool, wherein the pressing unit applies a pressing force at a predetermined cycle. Has a means for changing, supplying the abrasive to the surface to be polished while changing the pressing force,
A polishing apparatus for polishing the polished surface of the workpiece with the polishing tool. 31. The polishing apparatus according to claim 30, wherein said polishing surface is made of polyurethane. 32. At least one of the workpiece and the polishing tool is rotated, and the polished surface of the workpiece and the polished surface of the polishing tool are brought into contact with each other by receiving a predetermined pressing force. In a polishing method for polishing a polished surface, a pressure is changed at a predetermined cycle, and an abrasive is supplied between the polished surface of the workpiece and the polished surface of the polishing tool. Polishing the surface to be polished. 33. The polishing method according to claim 32, wherein polyurethane is used for said polishing surface.