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JPS5759384A - Manufacture of longitudinal type insulated field effect semiconductor device - Google Patents

Manufacture of longitudinal type insulated field effect semiconductor device

Info

Publication number
JPS5759384A
JPS5759384A JP55134431A JP13443180A JPS5759384A JP S5759384 A JPS5759384 A JP S5759384A JP 55134431 A JP55134431 A JP 55134431A JP 13443180 A JP13443180 A JP 13443180A JP S5759384 A JPS5759384 A JP S5759384A
Authority
JP
Japan
Prior art keywords
gate electrode
mask
implanted
region
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55134431A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55134431A priority Critical patent/JPS5759384A/en
Publication of JPS5759384A publication Critical patent/JPS5759384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

PURPOSE:To reduce a chip by introducing a one conductive type impurities with a part of a gate electrode provided on a semiconductor substrate as a mask, then introducing reverse conductive type impurities with a part of the same gate electrode as a mask. CONSTITUTION:An n<-> type epitaxial layer 2 is provided on the n<+> type Si substrate 1. The gate electrode 7 is provided via a gate oxide film 6. A central part is covered by a photoresist layer. Then B is implanted with the gate electrode as a mask. A channel region 4 is formed by heat treatment. Then the photoresist is removed, and P is implanted with the gate electrode as a mask again (13 is the implanted region). A source and drain region is formed by heat treatment. In this method, sicne the entire semiconductor region can be formed in a self-aligning mode, the gate length and the channel length can be shortened, and the input capacity can be reduced.
JP55134431A 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device Pending JPS5759384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55134431A JPS5759384A (en) 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134431A JPS5759384A (en) 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5759384A true JPS5759384A (en) 1982-04-09

Family

ID=15128212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134431A Pending JPS5759384A (en) 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759384A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
JPS59219965A (en) * 1983-05-30 1984-12-11 Matsushita Electric Ind Co Ltd Metal oxide semiconductor type field-effect transistor
JPS601839U (en) * 1983-06-17 1985-01-09 渡辺　勝太 Scaffold support temporary rotating bracket for wall work
JP2005252157A (en) * 2004-03-08 2005-09-15 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor
JP2006303323A (en) * 2005-04-22 2006-11-02 Rohm Co Ltd Semiconductor device and its fabrication process
WO2010044226A1 (en) * 2008-10-17 2010-04-22 パナソニック株式会社 Semiconductor device and method for manufacturing same
JP2012156544A (en) * 2012-04-11 2012-08-16 Rohm Co Ltd Semiconductor device and method for manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
JPS59219965A (en) * 1983-05-30 1984-12-11 Matsushita Electric Ind Co Ltd Metal oxide semiconductor type field-effect transistor
JPH0425716B2 (en) * 1983-05-30 1992-05-01 Matsushita Electric Ind Co Ltd
JPS601839U (en) * 1983-06-17 1985-01-09 渡辺　勝太 Scaffold support temporary rotating bracket for wall work
JPH037473Y2 (en) * 1983-06-17 1991-02-25
JP2005252157A (en) * 2004-03-08 2005-09-15 Mitsubishi Electric Corp Semiconductor device and manufacturing method therefor
JP4620368B2 (en) * 2004-03-08 2011-01-26 三菱電機株式会社 Manufacturing method of semiconductor device
JP2006303323A (en) * 2005-04-22 2006-11-02 Rohm Co Ltd Semiconductor device and its fabrication process
WO2010044226A1 (en) * 2008-10-17 2010-04-22 パナソニック株式会社 Semiconductor device and method for manufacturing same
CN102187463A (en) * 2008-10-17 2011-09-14 松下电器产业株式会社 Semiconductor device and method for manufacturing same
JP2012156544A (en) * 2012-04-11 2012-08-16 Rohm Co Ltd Semiconductor device and method for manufacturing the same

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