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JPS5688354A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5688354A
JPS5688354A JP16480479A JP16480479A JPS5688354A JP S5688354 A JPS5688354 A JP S5688354A JP 16480479 A JP16480479 A JP 16480479A JP 16480479 A JP16480479 A JP 16480479A JP S5688354 A JPS5688354 A JP S5688354A
Authority
JP
Japan
Prior art keywords
film
gate electrode
mask
sio2
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16480479A
Other languages
Japanese (ja)
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16480479A priority Critical patent/JPS5688354A/en
Publication of JPS5688354A publication Critical patent/JPS5688354A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a transistor capable of being controlled at threshold voltage by forming a negative gate electrode formed on the channel region of an MOS transistor of two layers and applying different voltages thereto. CONSTITUTION:An SiO2 film 2 and a polycrystalline silicon film 3 are laminated on an Si substrate 1, an oxidation resistant mask 4 is formed only on a gate electrode forming region, is heat treated, the film 3 is retained as a film 31 only under the mask 4, and the other is transformed into an SiO2 film 32. Subsequently, the mask 4 is removed, is oxidized, first thin gate SiO2 film 5 is formed on the surface layer of the film 31, ions are implanted therethrough, and the film 31 is used as an n<+> type first gate electrode. Thereafter, a polycrystalline Si film 6 is again accumulated on the element forming region including it, is covered with an SiO2 film 7, second polycrystalline Si gate electrode 81 is formed on the center, ions are implanted, n<+> type source and drain regions 9 and 10 are formed on the peripheries of the film 6, and a conductivity is imparted to the electrode 81.
JP16480479A 1979-12-20 1979-12-20 Semiconductor integrated circuit device Pending JPS5688354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16480479A JPS5688354A (en) 1979-12-20 1979-12-20 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16480479A JPS5688354A (en) 1979-12-20 1979-12-20 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5688354A true JPS5688354A (en) 1981-07-17

Family

ID=15800230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16480479A Pending JPS5688354A (en) 1979-12-20 1979-12-20 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5688354A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817674A (en) * 1981-07-24 1983-02-01 Seiko Epson Corp Metal oxide semiconductor type semiconductor device
JPS5897877A (en) * 1981-11-26 1983-06-10 シ−メンス・アクチエンゲゼルシヤフト Thin film mos phototransistor, method of producing same and driving method
JPS59182570A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi Semiconductor integrated circuit
JPS6215852A (en) * 1985-07-15 1987-01-24 Nec Corp Semiconductor device
JPS6329975A (en) * 1986-07-23 1988-02-08 Sony Corp Field effect semiconductor device
JPS63119578A (en) * 1986-11-07 1988-05-24 Seiko Epson Corp Semiconductor device
US4748485A (en) * 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
US4980308A (en) * 1987-01-30 1990-12-25 Sony Corporation Method of making a thin film transistor
US5138409A (en) * 1989-02-09 1992-08-11 Fujitsu Limited High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance
US5148393A (en) * 1988-07-07 1992-09-15 Kabushiki Kaisha Toshiba Mos dynamic semiconductor memory cell
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US5550390A (en) * 1991-08-08 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5726082A (en) * 1995-06-30 1998-03-10 Hyundai Electronics Industries Co., Ltd. Semiconductor device and method for fabricating the same
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235585A (en) * 1975-08-29 1977-03-18 Westinghouse Electric Corp Thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235585A (en) * 1975-08-29 1977-03-18 Westinghouse Electric Corp Thin film transistor

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817674A (en) * 1981-07-24 1983-02-01 Seiko Epson Corp Metal oxide semiconductor type semiconductor device
JPS5897877A (en) * 1981-11-26 1983-06-10 シ−メンス・アクチエンゲゼルシヤフト Thin film mos phototransistor, method of producing same and driving method
JPS59182570A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi Semiconductor integrated circuit
US4748485A (en) * 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
US5137841A (en) * 1985-03-29 1992-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a thin film transistor using positive and negative photoresists
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
JPS6215852A (en) * 1985-07-15 1987-01-24 Nec Corp Semiconductor device
JPS6329975A (en) * 1986-07-23 1988-02-08 Sony Corp Field effect semiconductor device
JPH0824186B2 (en) * 1986-07-23 1996-03-06 ソニー株式会社 Field effect type semiconductor device
JPS63119578A (en) * 1986-11-07 1988-05-24 Seiko Epson Corp Semiconductor device
US4980308A (en) * 1987-01-30 1990-12-25 Sony Corporation Method of making a thin film transistor
US5148393A (en) * 1988-07-07 1992-09-15 Kabushiki Kaisha Toshiba Mos dynamic semiconductor memory cell
US5138409A (en) * 1989-02-09 1992-08-11 Fujitsu Limited High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance
US5550390A (en) * 1991-08-08 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5726082A (en) * 1995-06-30 1998-03-10 Hyundai Electronics Industries Co., Ltd. Semiconductor device and method for fabricating the same

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