JPS5736863A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5736863A JPS5736863A JP11171980A JP11171980A JPS5736863A JP S5736863 A JPS5736863 A JP S5736863A JP 11171980 A JP11171980 A JP 11171980A JP 11171980 A JP11171980 A JP 11171980A JP S5736863 A JPS5736863 A JP S5736863A
- Authority
- JP
- Japan
- Prior art keywords
- injected
- injecting
- type
- type impurity
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 108091006146 Channels Proteins 0.000 abstract 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- 230000002411 adverse Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve the electric characteristic of a semiconductor device by injecting one conductive type impurity forming the channel of a J-FET, then injecting the same conductive type impurity on the surface and further injecting the reverse conductive type impurity to form a gate region. CONSTITUTION:After p type source and drain regions 6, 7 are formed in an N type semiconductor substrate 2, B is injected to form a p type channel region 8 and to form a gate oxidized film 11a, B is then lightly injected on the surface to compensate the decrease in the surface density, P is then injected to form an N type gate region 9, a gate electrode 16, source and drain electrodes 14, 15 are eventually formed, and a J-FET is thus formed. Since no diffusion is performed in this manner, it can eliminate the adverse influence to the other element, thereby preferably maintaining the electrice characteristics of an IC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11171980A JPS5736863A (en) | 1980-08-15 | 1980-08-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11171980A JPS5736863A (en) | 1980-08-15 | 1980-08-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5736863A true JPS5736863A (en) | 1982-02-27 |
Family
ID=14568424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11171980A Pending JPS5736863A (en) | 1980-08-15 | 1980-08-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5736863A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912053A (en) * | 1988-02-01 | 1990-03-27 | Harris Corporation | Ion implanted JFET with self-aligned source and drain |
| US5219776A (en) * | 1990-07-30 | 1993-06-15 | Sharp Kabushiki Kaisha | Method of manufacturing semiconductor device |
| US10433500B2 (en) | 2015-05-19 | 2019-10-08 | Sungsoon SHIN | Rotating ejection type oozing hose for plant cultivation |
-
1980
- 1980-08-15 JP JP11171980A patent/JPS5736863A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912053A (en) * | 1988-02-01 | 1990-03-27 | Harris Corporation | Ion implanted JFET with self-aligned source and drain |
| US5219776A (en) * | 1990-07-30 | 1993-06-15 | Sharp Kabushiki Kaisha | Method of manufacturing semiconductor device |
| US10433500B2 (en) | 2015-05-19 | 2019-10-08 | Sungsoon SHIN | Rotating ejection type oozing hose for plant cultivation |
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