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JPS57157545A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57157545A
JPS57157545A JP4249781A JP4249781A JPS57157545A JP S57157545 A JPS57157545 A JP S57157545A JP 4249781 A JP4249781 A JP 4249781A JP 4249781 A JP4249781 A JP 4249781A JP S57157545 A JPS57157545 A JP S57157545A
Authority
JP
Japan
Prior art keywords
film
hole
onto
whole surface
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4249781A
Other languages
Japanese (ja)
Inventor
Ryozo Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4249781A priority Critical patent/JPS57157545A/en
Publication of JPS57157545A publication Critical patent/JPS57157545A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain wiring which is not broken at stages by evaporating a metallic film onto the whole surface while leaving a conductive film and a metallic film in a contact hole section and forming a metal evaporating film contacting with the conductive film and the metallic film in the hole section through patterning. CONSTITUTION:An SiO2 film 32 functioning as a layer insulating film is deposited onto a semiconductor substrate 31 through a CVD method, and the contact hole C is bored through reactive ion etching. The semiconductor film 33 consisting of polycrystal Si is deposited onto the whole surface through a CVD method containing PH3 gas, the Al film 34 is evaporated onto the film 33, and a resist film 35 is applied flattening the surface. The films 35, 34 are etched by reactive ions by using the mixed gas of CCl4 and Cl2, and the films 35, 34 are left only in the hole C. The film 35 in the hole C is removed by employing a plasma method, the Al film 36 is sputtered onto the whole surface, and contacted with the Al film 34 in the hole C, and wiring is completed.
JP4249781A 1981-03-25 1981-03-25 Manufacture of semiconductor device Pending JPS57157545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4249781A JPS57157545A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4249781A JPS57157545A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57157545A true JPS57157545A (en) 1982-09-29

Family

ID=12637693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4249781A Pending JPS57157545A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57157545A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605527A (en) * 1983-06-24 1985-01-12 Agency Of Ind Science & Technol Flattening method of semiconductor device
JPS6085516A (en) * 1983-10-17 1985-05-15 Fujitsu Ltd Manufacture of semiconductor device
JPS61124154A (en) * 1984-11-20 1986-06-11 Nec Corp Manufacture of semiconductor device
JPS6232611A (en) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp Manufacturing method for self-alignment-type built-in electrode contact
JPS62229959A (en) * 1986-02-28 1987-10-08 ゼネラル・エレクトリツク・カンパニイ Method of filling passage or contact hole in layer insulatorin multilayer metal covered very large scale integrated circuit
JPS6321855A (en) * 1986-07-15 1988-01-29 Mitsubishi Electric Corp Manufacture of semiconductor device
EP0257948A2 (en) * 1986-08-25 1988-03-02 AT&T Corp. Conductive via plug for CMOS devices
JPS6428925A (en) * 1987-07-24 1989-01-31 Semiconductor Energy Lab Formation of insulating film
JPH05136277A (en) * 1990-11-24 1993-06-01 Hyundai Electron Ind Co Ltd Method of forming metallic-wiring contact

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119478A (en) * 1974-08-09 1976-02-16 Fujitsu Ltd Handotaisochino seizohoho
JPS51147981A (en) * 1975-06-13 1976-12-18 Nec Corp Method of manufacturing semiconductor device
JPS5249767A (en) * 1975-10-20 1977-04-21 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119478A (en) * 1974-08-09 1976-02-16 Fujitsu Ltd Handotaisochino seizohoho
JPS51147981A (en) * 1975-06-13 1976-12-18 Nec Corp Method of manufacturing semiconductor device
JPS5249767A (en) * 1975-10-20 1977-04-21 Hitachi Ltd Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605527A (en) * 1983-06-24 1985-01-12 Agency Of Ind Science & Technol Flattening method of semiconductor device
JPS6085516A (en) * 1983-10-17 1985-05-15 Fujitsu Ltd Manufacture of semiconductor device
JPS61124154A (en) * 1984-11-20 1986-06-11 Nec Corp Manufacture of semiconductor device
JPS6232611A (en) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp Manufacturing method for self-alignment-type built-in electrode contact
JPS62229959A (en) * 1986-02-28 1987-10-08 ゼネラル・エレクトリツク・カンパニイ Method of filling passage or contact hole in layer insulatorin multilayer metal covered very large scale integrated circuit
JPS6321855A (en) * 1986-07-15 1988-01-29 Mitsubishi Electric Corp Manufacture of semiconductor device
EP0257948A2 (en) * 1986-08-25 1988-03-02 AT&T Corp. Conductive via plug for CMOS devices
JPS6428925A (en) * 1987-07-24 1989-01-31 Semiconductor Energy Lab Formation of insulating film
JPH05136277A (en) * 1990-11-24 1993-06-01 Hyundai Electron Ind Co Ltd Method of forming metallic-wiring contact

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