Nothing Special   »   [go: up one dir, main page]

JPS6482620A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6482620A
JPS6482620A JP24140887A JP24140887A JPS6482620A JP S6482620 A JPS6482620 A JP S6482620A JP 24140887 A JP24140887 A JP 24140887A JP 24140887 A JP24140887 A JP 24140887A JP S6482620 A JPS6482620 A JP S6482620A
Authority
JP
Japan
Prior art keywords
substrate
film
adhesion
metallic film
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24140887A
Other languages
Japanese (ja)
Inventor
Iwao Kunishima
Takahiko Moriya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24140887A priority Critical patent/JPS6482620A/en
Publication of JPS6482620A publication Critical patent/JPS6482620A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the film from peeling off by modifying the surface of the underlying substrate to be contacted with a metallic film so that the adhesion between the metallic film improves, before forming the metallic film, thereby improving the adhesion of the metallic film to be buried into a contact hole and the underlying substrate. CONSTITUTION:A n<+> type diffusion layer 13 is formed by the ion implantation of As in a P-type Si substrate 11 on which an insulating film 12 for element isolation was formed, and thereafter a SiO2 film 14 is deposited as an inter-layer insulating film on the whole substrate surface by a CVD method. And a resist 15 is formed in a predetermined pattern on the SiO2 film 14 using a photolithography technique, and with this as a mask a contact hole 16 for the diffusion layer 13 is formed by a reactive ion etching. By implanting Si ions into the surface of the substrate 11, an amorphous layer 17 is formed in the surface of the Si substrate 11. And, since the surface of the Si substrate 11 has been made amorphous by the ion implantation of Si, a W film 18 formed on the surface of the Si substrate 11 using a selective CVD method is bonded to the Si substrate 11 with good adhesion, whereby the W film 18 is prevented from peeling off.
JP24140887A 1987-09-25 1987-09-25 Manufacture of semiconductor device Pending JPS6482620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24140887A JPS6482620A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24140887A JPS6482620A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482620A true JPS6482620A (en) 1989-03-28

Family

ID=17073843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24140887A Pending JPS6482620A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482620A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03154333A (en) * 1989-11-10 1991-07-02 Toshiba Corp Manufacture of semiconductor device
US5168072A (en) * 1990-10-12 1992-12-01 Texas Instruments Incorporated Method of fabricating an high-performance insulated-gate field-effect transistor
US5360766A (en) * 1990-06-05 1994-11-01 Samsung Electronics Co., Ltd. Method for growing a high-melting-point metal film
US5541131A (en) * 1991-02-01 1996-07-30 Taiwan Semiconductor Manufacturing Co. Peeling free metal silicide films using ion implantation
JPH09134890A (en) * 1995-11-10 1997-05-20 Nec Corp Manufacture of semiconductor device
US5770517A (en) * 1997-03-21 1998-06-23 Advanced Micro Devices, Inc. Semiconductor fabrication employing copper plug formation within a contact area
US5804504A (en) * 1994-10-12 1998-09-08 Hyundai Electronics Industries Co., Ltd. Method for forming wiring of semiconductor device
CN105140107A (en) * 2015-08-25 2015-12-09 上海新傲科技股份有限公司 Preparation method for substrate with charge trap and insulation buried layer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200418A (en) * 1983-04-28 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPS6046024A (en) * 1983-08-24 1985-03-12 Toshiba Corp Manufacture of semiconductor device
JPS60119750A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device
JPS6254469A (en) * 1985-09-03 1987-03-10 Seiko Epson Corp Manufacture of semiconductor device
JPS63296337A (en) * 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200418A (en) * 1983-04-28 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPS6046024A (en) * 1983-08-24 1985-03-12 Toshiba Corp Manufacture of semiconductor device
JPS60119750A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device
JPS6254469A (en) * 1985-09-03 1987-03-10 Seiko Epson Corp Manufacture of semiconductor device
JPS63296337A (en) * 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03154333A (en) * 1989-11-10 1991-07-02 Toshiba Corp Manufacture of semiconductor device
US5360766A (en) * 1990-06-05 1994-11-01 Samsung Electronics Co., Ltd. Method for growing a high-melting-point metal film
US5168072A (en) * 1990-10-12 1992-12-01 Texas Instruments Incorporated Method of fabricating an high-performance insulated-gate field-effect transistor
US5397909A (en) * 1990-10-12 1995-03-14 Texas Instruments Incorporated High-performance insulated-gate field-effect transistor
US5541131A (en) * 1991-02-01 1996-07-30 Taiwan Semiconductor Manufacturing Co. Peeling free metal silicide films using ion implantation
US5804504A (en) * 1994-10-12 1998-09-08 Hyundai Electronics Industries Co., Ltd. Method for forming wiring of semiconductor device
JPH09134890A (en) * 1995-11-10 1997-05-20 Nec Corp Manufacture of semiconductor device
US5770517A (en) * 1997-03-21 1998-06-23 Advanced Micro Devices, Inc. Semiconductor fabrication employing copper plug formation within a contact area
US5955785A (en) * 1997-03-21 1999-09-21 Advanced Micro Devices, Inc. Copper-containing plug for connection of semiconductor surface with overlying conductor
CN105140107A (en) * 2015-08-25 2015-12-09 上海新傲科技股份有限公司 Preparation method for substrate with charge trap and insulation buried layer

Similar Documents

Publication Publication Date Title
US4160260A (en) Planar semiconductor devices and method of making the same
EP0177105A3 (en) Method for providing a semiconductor device with planarized contacts
US5459100A (en) Method for forming metal wiring of semiconductor device
JPS6482620A (en) Manufacture of semiconductor device
KR960019649A (en) Manufacturing Method of Semiconductor Device
US4263709A (en) Planar semiconductor devices and method of making the same
DE3363387D1 (en) Method of making an insulating layer between metallisation layers of integrated semiconductor circuits
JPS6441240A (en) Semiconductor integrated circuit device
JPS57145340A (en) Manufacture of semiconductor device
TW375782B (en) Method of forming intermediate insulation layer in semiconductor device
EP0313777A3 (en) Method for providing increased dopant concentration in selected regions of semiconductor devices
JPS6422045A (en) Manufacture of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS6484735A (en) Manufacture of semiconductor device
TW350129B (en) Manufacturing method of semiconductor formation latches the invention relates to a manufacturing method of semiconductor formation latches
TW358227B (en) Half-embedded metal manufacturing for improvement of planarization of Ics
JPS6482543A (en) Manufacture of dielectric isolation substrate
JPS6468945A (en) Manufacture of semiconductor integrated circuit device
JPS645037A (en) Manufacture of semiconductor device
KR960008521B1 (en) Semiconductor device isolation method
KR950014115B1 (en) Contact connecting method
JPS5773942A (en) Manufacture of semiconductor device
GB2083946A (en) Method of making integrated circuits
JPS57160154A (en) Manufacture of semiconductor device
JPS5660028A (en) Manufacture of semiconductor device