JPS57112015A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57112015A JPS57112015A JP18708580A JP18708580A JPS57112015A JP S57112015 A JPS57112015 A JP S57112015A JP 18708580 A JP18708580 A JP 18708580A JP 18708580 A JP18708580 A JP 18708580A JP S57112015 A JPS57112015 A JP S57112015A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- mask
- forming region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the excellent ohmic contact for the subject semiconductor device by a method wherein a mask, with which a transistor forming region is covered and a contact electrode forming region is exposed, is provided on the oxide film which was coated on a semiconductor substrate, and the impurity ion of the same conductive type as the substrate is implanted in the electrode forming region. CONSTITUTION:A thin SiO2 film 12 is formed on the P type Si substrate 11, covered by an Si3N4 film, and a mask 13 of the Si3N4 film is remained only on the substrate contact electrode forming region CS and the transistor forming region Q by performing a patterning using a photoresist film 14. Then, among the films 14, the film 14 on the region Q only is renewed with the resist film 15 which covers all the exposed surface of the mask 13, and a B<+> ion is implanted on the whole surface. Subsequently, a field oxide film 16, a channel cut region 18 and a high impurity density region 19 are grown respectively by selectively performing a thermal oxidization using the mask 13. Then, source and drain regions 22 and 23 and the like are formed using an ordinary method, and then a contact electrode 26 is formed on the region 19.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18708580A JPS57112015A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18708580A JPS57112015A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57112015A true JPS57112015A (en) | 1982-07-12 |
Family
ID=16199851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18708580A Pending JPS57112015A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112015A (en) |
-
1980
- 1980-12-29 JP JP18708580A patent/JPS57112015A/en active Pending
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