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JPS56111264A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56111264A
JPS56111264A JP1243780A JP1243780A JPS56111264A JP S56111264 A JPS56111264 A JP S56111264A JP 1243780 A JP1243780 A JP 1243780A JP 1243780 A JP1243780 A JP 1243780A JP S56111264 A JPS56111264 A JP S56111264A
Authority
JP
Japan
Prior art keywords
film
substrate
regions
type
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1243780A
Other languages
Japanese (ja)
Inventor
Toshihiro Sekikawa
Hiroyuki Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1243780A priority Critical patent/JPS56111264A/en
Publication of JPS56111264A publication Critical patent/JPS56111264A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce parasitic capacity and enable high-speed operation by forming source and drain regions and an excelent ohmic contact without increase in the area of an element. CONSTITUTION:On a p type Si substrate 1 are formed n<+> type source and drain regions 2 and 3, a gate electrode 4 and a gate oxidized film 7, an insulation film 9 is laminated on the surface and further a resist film 17 is laminated thereon. And, according to a source-drain contact pattern, openings 200 and 300 are made in the film 17. Next, the insulation film 9 is removed by etching while the film 17 serving as a mask, and at this time, the surface of the substrate 1 or a p<+> region 13 is exposed as parts C and E. Then, a poly-Si layer 18 containing impurity of the same conductive type with those in the regions 2 and 3 is laminated on the whole surface and subjected to a heat-treatment process, whereby the impurity is diffused in the substrate 1 to n type regions 19 and 20. In this way, the layer 18 is to contact with the substrate 1 only through the intermediary of the regions 19 and 20, and thus insulation with p-n juction is obtained and a contact part can be provided without increase in the area of element.
JP1243780A 1980-02-06 1980-02-06 Manufacture of semiconductor device Pending JPS56111264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1243780A JPS56111264A (en) 1980-02-06 1980-02-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1243780A JPS56111264A (en) 1980-02-06 1980-02-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111264A true JPS56111264A (en) 1981-09-02

Family

ID=11805267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1243780A Pending JPS56111264A (en) 1980-02-06 1980-02-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111264A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104079A2 (en) * 1982-09-20 1984-03-28 International Business Machines Corporation Integrated circuit contact structure
EP0124115A2 (en) * 1983-04-28 1984-11-07 Kabushiki Kaisha Toshiba Semiconducter ROM device and method for manufacturing the same
JPS61501808A (en) * 1984-04-09 1986-08-21 アメリカン テレフオン アンド テレグラフ カムパニ− How to transfer impurities from region to region in semiconductor devices
JPH01128568A (en) * 1987-11-13 1989-05-22 Matsushita Electron Corp Semiconductor device
US4888297A (en) * 1982-09-20 1989-12-19 International Business Machines Corporation Process for making a contact structure including polysilicon and metal alloys

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353275A (en) * 1976-10-26 1978-05-15 Seiko Epson Corp Semiconductor device
JPS5357975A (en) * 1976-11-06 1978-05-25 Cho Lsi Gijutsu Kenkyu Kumiai Selffmatching gate mos transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353275A (en) * 1976-10-26 1978-05-15 Seiko Epson Corp Semiconductor device
JPS5357975A (en) * 1976-11-06 1978-05-25 Cho Lsi Gijutsu Kenkyu Kumiai Selffmatching gate mos transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104079A2 (en) * 1982-09-20 1984-03-28 International Business Machines Corporation Integrated circuit contact structure
US4888297A (en) * 1982-09-20 1989-12-19 International Business Machines Corporation Process for making a contact structure including polysilicon and metal alloys
EP0124115A2 (en) * 1983-04-28 1984-11-07 Kabushiki Kaisha Toshiba Semiconducter ROM device and method for manufacturing the same
JPS61501808A (en) * 1984-04-09 1986-08-21 アメリカン テレフオン アンド テレグラフ カムパニ− How to transfer impurities from region to region in semiconductor devices
JPH01128568A (en) * 1987-11-13 1989-05-22 Matsushita Electron Corp Semiconductor device

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