JPS54159887A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS54159887A JPS54159887A JP6947778A JP6947778A JPS54159887A JP S54159887 A JPS54159887 A JP S54159887A JP 6947778 A JP6947778 A JP 6947778A JP 6947778 A JP6947778 A JP 6947778A JP S54159887 A JPS54159887 A JP S54159887A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio2
- poly
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To prevent pollution ions from invading a field insulating film to prevent the lowering of the insulating property between memory cell capacities dependent upon parasitic channel-property leak. CONSTITUTION:Memory cell capacity regions which are formed by poly-crystal Si layer 23a of the first layer and are adjacent to each other are insulated by channel stopper 27, which is obtained by diffusing B to P-type Si substrate 21, and field SiO2 film 26 which is obtained by subjecting substrate 21 to thermal oxidation. Then, the insulating film under Si layer 23a has a three-layer structure of SiO2 layer 22a, Si N layer 29 and SiO2 layer 22a2. This Si N layer 29 covers the surface of field SiO2 film 26. A transfer gate region is formed by poly-crystal Si layer 23b which is insulated from poly-crystal Si layer 23a by SiO2 film 24, and is covered with P, S and G layer 25, thereby stabilizing the thershold voltage of the transfer gate. Then, diffusion layer 28 obtained by diffusing selectively P to P-type Si substrate 21 forms a digit line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6947778A JPS54159887A (en) | 1978-06-08 | 1978-06-08 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6947778A JPS54159887A (en) | 1978-06-08 | 1978-06-08 | Semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54159887A true JPS54159887A (en) | 1979-12-18 |
Family
ID=13403798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6947778A Pending JPS54159887A (en) | 1978-06-08 | 1978-06-08 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54159887A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5191676A (en) * | 1975-02-10 | 1976-08-11 | ||
| JPS5212584A (en) * | 1975-07-21 | 1977-01-31 | Siemens Ag | Semiconductor memory |
| JPS5294782A (en) * | 1976-02-05 | 1977-08-09 | Nec Corp | Insulation gate type ic |
| JPS5299791A (en) * | 1976-02-18 | 1977-08-22 | Nec Corp | Intergrated circuit |
| JPS5499791A (en) * | 1978-01-25 | 1979-08-06 | Teijin Ltd | Oxygen absorbent |
-
1978
- 1978-06-08 JP JP6947778A patent/JPS54159887A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5191676A (en) * | 1975-02-10 | 1976-08-11 | ||
| JPS5212584A (en) * | 1975-07-21 | 1977-01-31 | Siemens Ag | Semiconductor memory |
| JPS5294782A (en) * | 1976-02-05 | 1977-08-09 | Nec Corp | Insulation gate type ic |
| JPS5299791A (en) * | 1976-02-18 | 1977-08-22 | Nec Corp | Intergrated circuit |
| JPS5499791A (en) * | 1978-01-25 | 1979-08-06 | Teijin Ltd | Oxygen absorbent |
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