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JPS5727068A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5727068A
JPS5727068A JP10224380A JP10224380A JPS5727068A JP S5727068 A JPS5727068 A JP S5727068A JP 10224380 A JP10224380 A JP 10224380A JP 10224380 A JP10224380 A JP 10224380A JP S5727068 A JPS5727068 A JP S5727068A
Authority
JP
Japan
Prior art keywords
region
silicon layer
type
insular
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10224380A
Other languages
Japanese (ja)
Inventor
Atsushi Iwamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10224380A priority Critical patent/JPS5727068A/en
Publication of JPS5727068A publication Critical patent/JPS5727068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To take out an insular silicon layer to the outside without lowering the degree of integration by connecting the insular silicon layer under a channel region to an electrode taking-out region through a region formed to a tapered outer circumferencial side surface in a MOS/a SOS. CONSTITUTION:The p<-> type insular silicon layer insulated by a field oxide film is shaped onto an insulating substrate, and n<+> type source and drain regions 111, 112 are formed at the both sides. A gate electrode 110 is shaped onto the channel region between the source and drain regions 111, 112 through a gate oxide film while a (p) type silicon region 108 with concentration in an extent that does not cause a Zener breakdown is molded to the tapered outer circumferential side surface of the insular silicon layer, and the p<+> type electrode taking-out region 113 is formed being connected to the region 108.
JP10224380A 1980-07-25 1980-07-25 Mos type semiconductor device Pending JPS5727068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10224380A JPS5727068A (en) 1980-07-25 1980-07-25 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10224380A JPS5727068A (en) 1980-07-25 1980-07-25 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5727068A true JPS5727068A (en) 1982-02-13

Family

ID=14322171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10224380A Pending JPS5727068A (en) 1980-07-25 1980-07-25 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5727068A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231764A (en) * 1985-04-08 1986-10-16 Hitachi Ltd Semiconductor device
JPS62104173A (en) * 1985-10-31 1987-05-14 Fujitsu Ltd Semiconductor device
JPS62109355A (en) * 1985-11-07 1987-05-20 Fujitsu Ltd Semiconductor device
JPH0296376A (en) * 1988-06-03 1990-04-09 Nippon Denso Co Ltd Semiconductor device
WO1993008603A1 (en) * 1991-10-21 1993-04-29 Harris Corporation Soi cmos device having body extension for providing sidewall channel stop and body tie
US5293052A (en) * 1992-03-23 1994-03-08 Harris Corporation SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop
US5498882A (en) * 1994-03-16 1996-03-12 Texas Instruments Incorporated Efficient control of the body voltage of a field effect transistor
JP2003174172A (en) * 2001-09-26 2003-06-20 Seiko Epson Corp Field effect transistor, electroptical device using the same, semiconductor device and electronic apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231764A (en) * 1985-04-08 1986-10-16 Hitachi Ltd Semiconductor device
JPS62104173A (en) * 1985-10-31 1987-05-14 Fujitsu Ltd Semiconductor device
JPS62109355A (en) * 1985-11-07 1987-05-20 Fujitsu Ltd Semiconductor device
JPH0296376A (en) * 1988-06-03 1990-04-09 Nippon Denso Co Ltd Semiconductor device
WO1993008603A1 (en) * 1991-10-21 1993-04-29 Harris Corporation Soi cmos device having body extension for providing sidewall channel stop and body tie
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5293052A (en) * 1992-03-23 1994-03-08 Harris Corporation SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop
US5498882A (en) * 1994-03-16 1996-03-12 Texas Instruments Incorporated Efficient control of the body voltage of a field effect transistor
JP2003174172A (en) * 2001-09-26 2003-06-20 Seiko Epson Corp Field effect transistor, electroptical device using the same, semiconductor device and electronic apparatus

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