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JPS5212584A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5212584A
JPS5212584A JP51087103A JP8710376A JPS5212584A JP S5212584 A JPS5212584 A JP S5212584A JP 51087103 A JP51087103 A JP 51087103A JP 8710376 A JP8710376 A JP 8710376A JP S5212584 A JPS5212584 A JP S5212584A
Authority
JP
Japan
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51087103A
Other languages
Japanese (ja)
Other versions
JPS56947B2 (en
Inventor
Fuomu Batsuse Pauruuerunaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5212584A publication Critical patent/JPS5212584A/en
Publication of JPS56947B2 publication Critical patent/JPS56947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP51087103A 1975-07-21 1976-07-21 Semiconductor memory Granted JPS5212584A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2532594A DE2532594B2 (en) 1975-07-21 1975-07-21 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5212584A true JPS5212584A (en) 1977-01-31
JPS56947B2 JPS56947B2 (en) 1981-01-10

Family

ID=5952074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51087103A Granted JPS5212584A (en) 1975-07-21 1976-07-21 Semiconductor memory

Country Status (5)

Country Link
JP (1) JPS5212584A (en)
DE (1) DE2532594B2 (en)
FR (1) FR2319182A1 (en)
GB (1) GB1516005A (en)
NL (1) NL7607984A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5287380A (en) * 1976-05-10 1977-07-21 Texas Instruments Inc Semiconductor memory and method of producing same
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS55107973A (en) * 1979-02-14 1980-08-19 Bosch Gmbh Robert Ignition starting senser of internal combustion engine
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
JPH038832U (en) * 1989-06-14 1991-01-28

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176415C (en) * 1976-07-05 1985-04-01 Hitachi Ltd SEMI-CONDUCTOR MEMORY DEVICE CONTAINING A MATRIX OF SEMI-CONDUCTOR MEMORY CELLS CONSISTING OF A FIELD-EFFECT TRANSISTOR AND A STORAGE CAPACITY.
IT1089299B (en) * 1977-01-26 1985-06-18 Mostek Corp PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE
DE2935291A1 (en) * 1979-08-31 1981-03-19 Siemens AG, 1000 Berlin und 8000 München MONOLITHIC STATIC STORAGE CELL
DE2935254A1 (en) * 1979-08-31 1981-04-02 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A MONOLITHIC STATIC STORAGE CELL
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
DE3138314A1 (en) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München TWO-DIMENSIONAL SEMICONDUCTOR IMAGE SENSOR HIGH PACKING DENSITY WITH PHOTOCONDUCTOR LAYER
DE3138295A1 (en) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München TWO-DIMENSIONAL SEMICONDUCTOR IMAGE SENSOR WITH HIGH PACKING DENSITY
JPS5921168U (en) * 1982-07-30 1984-02-08 三菱電機株式会社 mechanical seal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5635305B2 (en) * 1975-12-26 1981-08-15
JPS6034270B2 (en) * 1976-01-12 1985-08-07 テキサス・インスツルメンツ・インコ−ポレイテツド Semiconductor memory device and its manufacturing method
JPS5287380A (en) * 1976-05-10 1977-07-21 Texas Instruments Inc Semiconductor memory and method of producing same
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS55107973A (en) * 1979-02-14 1980-08-19 Bosch Gmbh Robert Ignition starting senser of internal combustion engine
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
JPH038832U (en) * 1989-06-14 1991-01-28

Also Published As

Publication number Publication date
FR2319182A1 (en) 1977-02-18
GB1516005A (en) 1978-06-28
JPS56947B2 (en) 1981-01-10
FR2319182B3 (en) 1979-03-23
DE2532594A1 (en) 1977-02-03
NL7607984A (en) 1977-01-25
DE2532594B2 (en) 1980-05-22

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