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JPS56125868A - Thin-film semiconductor device - Google Patents

Thin-film semiconductor device

Info

Publication number
JPS56125868A
JPS56125868A JP2790480A JP2790480A JPS56125868A JP S56125868 A JPS56125868 A JP S56125868A JP 2790480 A JP2790480 A JP 2790480A JP 2790480 A JP2790480 A JP 2790480A JP S56125868 A JPS56125868 A JP S56125868A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
misfet
sio2 film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2790480A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2790480A priority Critical patent/JPS56125868A/en
Publication of JPS56125868A publication Critical patent/JPS56125868A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the density while stabilizing electrical characteristics by forming a conductor layer to which fixed potential is given between an MISFET of the first layer and an MISFET of the second layer. CONSTITUTION:A semiconductor layer 3 is made up on an SiO2 film 2 on the surface of an Si substrate 1, and a source region S1, a drain region D1 and an active region C1 of an MISFET are built up to the semiconductor layer 3. A gate electrode 5 is formed on the active region C1 through a gate SiO2 film 4. An SiO2 film 6 and a conductor layer 7 consisting of polycrystalline Si are further made up on the semiconductor layer 3. Fixed potential such as earth potential is given to the conductor layer 7. A semiconductor layer 9 of the second layer is built up through an SiO2 film 8, and a source region S2, a drain region D2 and an active region C2 of an MISFET are formed to the semiconductor layer 9.
JP2790480A 1980-03-07 1980-03-07 Thin-film semiconductor device Pending JPS56125868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2790480A JPS56125868A (en) 1980-03-07 1980-03-07 Thin-film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2790480A JPS56125868A (en) 1980-03-07 1980-03-07 Thin-film semiconductor device

Publications (1)

Publication Number Publication Date
JPS56125868A true JPS56125868A (en) 1981-10-02

Family

ID=12233868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2790480A Pending JPS56125868A (en) 1980-03-07 1980-03-07 Thin-film semiconductor device

Country Status (1)

Country Link
JP (1) JPS56125868A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126956A (en) * 1980-03-11 1981-10-05 Fujitsu Ltd Semiconductor device
JPS5892253A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Semiconductor memory device
JPS58151281U (en) * 1982-04-02 1983-10-11 大陽酸素株式会社 security wall
JPS5952862A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Multistage-structure semiconductor device
JPS614269A (en) * 1984-06-15 1986-01-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor structure and method of producing same
US4570175A (en) * 1982-06-22 1986-02-11 Hitachi, Ltd. Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
JPS61180467A (en) * 1985-02-06 1986-08-13 Agency Of Ind Science & Technol Laminated type semiconductor device
US4902637A (en) * 1986-03-03 1990-02-20 Mitsubishi Denki Kabushiki Kaisha Method for producing a three-dimensional type semiconductor device
US4974041A (en) * 1986-08-25 1990-11-27 Hughes Aircraft Company Integrated circuit structure with multiple common planes and method of forming the same
US4982266A (en) * 1987-12-23 1991-01-01 Texas Instruments Incorporated Integrated circuit with metal interconnecting layers above and below active circuitry
US5083190A (en) * 1989-09-05 1992-01-21 Motorola, Inc. Shared gate CMOS transistor
US5150189A (en) * 1986-02-28 1992-09-22 Canon Kabushiki Kaisha Semiconductor apparatus
US5279978A (en) * 1990-08-13 1994-01-18 Motorola Process for making BiCMOS device having an SOI substrate
US5606186A (en) * 1993-12-20 1997-02-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit
JPH09506797A (en) * 1993-12-22 1997-07-08 エイ． レディンハム，ブレイク Painting brush with replaceable bristle pack
US5852310A (en) * 1996-10-08 1998-12-22 Advanced Micro Devices, Inc. Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto
WO2000030183A1 (en) * 1998-11-17 2000-05-25 Japan Science And Technology Corporation Transistor and semiconductor device
US6348723B1 (en) * 1995-04-28 2002-02-19 Sharp Kabushiki Kaisha Semiconductor device with a dummy wire positioned to prevent charging/discharging of the parasitic capacitance of a signal wire
DE10057665A1 (en) * 2000-11-21 2002-06-06 Siemens Ag Organic field effect transistor has at least two current channels and/or one vertical current channel transverse to surface of substrate formed by field effect when voltage applied
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
JP2008081208A (en) * 2001-01-25 2008-04-10 Soc Des Produits Nestle Sa System and method for distributing beverage concentrated liquid
JP2009302530A (en) * 2008-06-02 2009-12-24 Commissariat A L'energie Atomique Three-dimensional integrated transistor circuit having dynamically adjustable threshold voltage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130485A (en) * 1974-09-09 1976-03-15 Fujitsu Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130485A (en) * 1974-09-09 1976-03-15 Fujitsu Ltd

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126956A (en) * 1980-03-11 1981-10-05 Fujitsu Ltd Semiconductor device
JPS5892253A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Semiconductor memory device
JPS58151281U (en) * 1982-04-02 1983-10-11 大陽酸素株式会社 security wall
US4570175A (en) * 1982-06-22 1986-02-11 Hitachi, Ltd. Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
JPS5952862A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Multistage-structure semiconductor device
JPH0350420B2 (en) * 1984-06-15 1991-08-01 Intaanashonaru Bijinesu Mashiinzu Corp
JPS614269A (en) * 1984-06-15 1986-01-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor structure and method of producing same
JPS61180467A (en) * 1985-02-06 1986-08-13 Agency Of Ind Science & Technol Laminated type semiconductor device
US5150189A (en) * 1986-02-28 1992-09-22 Canon Kabushiki Kaisha Semiconductor apparatus
US4902637A (en) * 1986-03-03 1990-02-20 Mitsubishi Denki Kabushiki Kaisha Method for producing a three-dimensional type semiconductor device
US4974041A (en) * 1986-08-25 1990-11-27 Hughes Aircraft Company Integrated circuit structure with multiple common planes and method of forming the same
US4982266A (en) * 1987-12-23 1991-01-01 Texas Instruments Incorporated Integrated circuit with metal interconnecting layers above and below active circuitry
US5083190A (en) * 1989-09-05 1992-01-21 Motorola, Inc. Shared gate CMOS transistor
US5279978A (en) * 1990-08-13 1994-01-18 Motorola Process for making BiCMOS device having an SOI substrate
US5606186A (en) * 1993-12-20 1997-02-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit
JPH09506797A (en) * 1993-12-22 1997-07-08 エイ． レディンハム，ブレイク Painting brush with replaceable bristle pack
US6348723B1 (en) * 1995-04-28 2002-02-19 Sharp Kabushiki Kaisha Semiconductor device with a dummy wire positioned to prevent charging/discharging of the parasitic capacitance of a signal wire
US5852310A (en) * 1996-10-08 1998-12-22 Advanced Micro Devices, Inc. Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto
WO2000030183A1 (en) * 1998-11-17 2000-05-25 Japan Science And Technology Corporation Transistor and semiconductor device
US6727522B1 (en) 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US7064346B2 (en) 1998-11-17 2006-06-20 Japan Science And Technology Agency Transistor and semiconductor device
DE10057665A1 (en) * 2000-11-21 2002-06-06 Siemens Ag Organic field effect transistor has at least two current channels and/or one vertical current channel transverse to surface of substrate formed by field effect when voltage applied
JP2008081208A (en) * 2001-01-25 2008-04-10 Soc Des Produits Nestle Sa System and method for distributing beverage concentrated liquid
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7888207B2 (en) 2002-05-21 2011-02-15 State of Oregon Acting by and through the Oregon State Board of Higher Eduacation on behalf of Oregon State University Transistor structures and methods for making the same
JP2009302530A (en) * 2008-06-02 2009-12-24 Commissariat A L'energie Atomique Three-dimensional integrated transistor circuit having dynamically adjustable threshold voltage

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