JP6832624B2 - 液晶表示装置およびその製造方法 - Google Patents
液晶表示装置およびその製造方法 Download PDFInfo
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- JP6832624B2 JP6832624B2 JP2015249295A JP2015249295A JP6832624B2 JP 6832624 B2 JP6832624 B2 JP 6832624B2 JP 2015249295 A JP2015249295 A JP 2015249295A JP 2015249295 A JP2015249295 A JP 2015249295A JP 6832624 B2 JP6832624 B2 JP 6832624B2
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- transparent electrode
- insulating film
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Description
(全体構成)
図1は、本実施の形態の液晶表示装置91の構成を、1つの画素領域に対応する範囲で線I−I(図2)に沿って概略的に示す部分断面図である。図2は、液晶表示装置91が有するTFT基板71の構成を、1つの画素領域に対応する範囲で概略的に示す部分平面図である。なお図2においては、図を見やすくするために、第1配向膜13(図1)は図示されておらず、また第3透明電極11(図1)についてはそのスリット状開口部OPSのみが二点鎖線で示されている。
TFT基板71は、第1透明基板1と、ゲート電極2と、第1絶縁膜3と、素子層4と、第1透明電極5と、第2絶縁膜6と、ソース電極7と、ドレイン電極8と、第2透明電極9と、第3絶縁膜10と、第3透明電極11と、共通電極配線層12と、第1配向膜13と、走査配線層31と、信号配線層32とを有している。ソース電極7および信号配線層32は第1導体層LY1として一体に形成されている。よってソース電極7には信号配線層32を介して電圧が印加される。ゲート電極2および走査配線層31は第2導体層LY2として一体に形成されている。よってゲート電極2には走査配線層31を介して電圧が印加される。各画素領域において、ゲート電極2と、ゲート絶縁膜としての第1絶縁膜3と、チャネルを構成する素子層4と、ソース電極7と、ドレイン電極8とにより、TFTが構成されている。
CF基板81は、第2透明基板17と、遮光膜18と、CF19と、保護膜20と、第2配向膜21とを有している。遮光膜18は、第2透明基板17の、液晶層22に面する面上に配置されている。CF19は、カラー表示のために画素ごとに所定の色を有している。TFT基板71およびCF基板81の外側には、位相差板および偏光板(図示せず)が配置されている。また、TFT基板71の走査配線層31、信号配線層32および共通電極配線層12の各々には駆動回路(図示せず)が接続されている。
次に、液晶表示装置91の製造方法について、以下に説明する。
本実施の形態の液晶表示装置91によれば、TFT基板71に第1透明電極5が設けられることにより、大きな保持容量を確保することができる。具体的には、第2絶縁膜6を介して第1透明電極5と第2透明電極9とにより構成された第1保持容量と、第3絶縁膜10を介して第2透明電極9と第3透明電極11とにより構成された第2保持容量との2つの保持容量が形成されるので、基板面積当たりの保持容量を増大することができる。特に、上記第1保持容量は、その1対の構成電極が共に平面電極であるため、電極面積を広く確保することができる。また第1透明電極5が透明であることにより、大きな開口率を確保することができる。さらに、第1透明電極5は、素子層4と同様に第1の絶縁膜3上に直接配置されており、かつ素子層4の組成と同一の組成を有している。これにより、第1透明電極5および素子層4について、成膜工程およびパターニング工程の各々を同時に行うことができる。つまり、第1透明電極5の形成のためだけの成膜およびパターニングを行う必要がない。よって、第1透明電極5を設けることに起因した製造コストの上昇を抑えることができる。以上から、大きな保持容量および開口率を確保しつつ製造コストの上昇を抑制することができる。
(構成)
図16は、本実施の形態の液晶表示装置92の構成を、1つの画素領域に対応する範囲で線XVI−XVI(図17)に沿って概略的に示す部分断面図である。図17は、液晶表示装置92が有するTFT基板72(アレイ基板)の構成を、1つの画素領域に対応する範囲で概略的に示す部分平面図である。なお図17においては、図を見やすくするために、第1配向膜13(図16)および第3絶縁膜10は図示されておらず、また第3透明電極11(図16)についてはそのスリット状開口部OPSのみが二点鎖線で示されている。
次に、液晶表示装置92のTFT基板72の製造方法について、以下に説明する。
本実施の形態によっても、実施の形態1とほぼ同様の効果が得られる。さらに本実施の形態によれば、図18および図19に示すように、ゲート電極2を含む第2導体層LY2(図17)と、共通電極配線層12mとを、同時に形成することができる。このため、工程数およびマスク数を削減することができる。よって製造コストをより低減することが可能である。
(構成)
上記実施の形態1および2ではFFS方式の液晶表示装置91および92について説明した。すなわち横電界方式の液晶表示装置について説明した。本実施の形態においては、縦電界方式の液晶表示装置について説明する。
次に、液晶表示装置93のTFT基板73の製造方法について、以下に説明する。なお図20までは実施の形態2と同様の工程が行われる。
本実施の形態の液晶表示装置93によれば、TFT基板73に第1透明電極5が設けられることにより、保持容量を確保することができる。具体的には、第2絶縁膜6を介して第1透明電極5と第2透明電極9とにより保持容量が形成される。その他、実施の形態2とほぼ同様の効果が得られる。
Claims (7)
- ゲート電極と、
前記ゲート電極を覆う部分を含む第1絶縁膜と、
前記第1絶縁膜上に直接配置され、前記第1絶縁膜を介して前記ゲート電極と対向するチャネル領域を有し、透明酸化物から作られ、前記チャネル領域によって隔てられた第1端部および第2端部を含む素子層と、
前記素子層から離れて前記第1絶縁膜上に直接配置され、前記素子層の金属組成と同一の金属組成を有する第1透明電極と、
前記第1透明電極から電気的に絶縁されつつ前記第1透明電極と対向することにより、前記第1透明電極と共に保持容量を形成する第2透明電極と、
前記素子層の前記チャネル領域を覆う部分と、前記第1透明電極と前記第2透明電極との間を隔てる部分とを有し、前記第1端部を露出する第1開口部と前記第2端部を露出する第2開口部とが設けられた第2絶縁膜と、
を備え、
前記第2絶縁膜は前記第1絶縁膜よりも薄く、前記第2絶縁膜は前記第1透明電極と前記第2透明電極との間に直接挟まれている部分を有し、
前記第1端部、前記第2端部および前記第1透明電極の抵抗率は前記チャネル領域の抵抗率よりも低く、かつ、前記第1端部、前記第2端部、前記第1透明電極および前記チャネル領域は同一の組成を有する、液晶表示装置。 - 前記第1透明電極の電子キャリア濃度が前記素子層の前記チャネル領域の電子キャリア濃度よりも高い、請求項1に記載の液晶表示装置。
- ゲート電極と、
前記ゲート電極を覆う部分を含む第1絶縁膜と、
前記第1絶縁膜上に配置され、前記第1絶縁膜を介して前記ゲート電極と対向するチャネル領域を有し、透明酸化物から作られ、前記チャネル領域によって隔てられた第1端部および第2端部を含む素子層と、
前記素子層から離れて前記第1絶縁膜上に前記素子層と同層に配置され、前記素子層の金属組成と同一の金属組成を有する第1透明電極と、
前記第1透明電極から電気的に絶縁されつつ前記第1透明電極と対向することにより、前記第1透明電極と共に保持容量を形成する第2透明電極と、
前記素子層の前記チャネル領域を覆う部分と、前記第1透明電極と前記第2透明電極との間を隔てる部分とを有し、前記第1端部を露出する第1開口部と前記第2端部を露出する第2開口部とが設けられた第2絶縁膜と、
を備え、
前記第2絶縁膜は前記第1絶縁膜よりも薄く、前記第2絶縁膜は前記第1透明電極と前記第2透明電極との間に直接挟まれている部分を有し、
前記第1端部、前記第2端部および前記第1透明電極の抵抗率は前記チャネル領域の抵抗率よりも低く、かつ、前記第1端部、前記第2端部、前記第1透明電極および前記チャネル領域は同一の組成を有する、液晶表示装置。 - 前記第2透明電極を覆う第3絶縁膜と、
前記第3絶縁膜によって前記第2透明電極から電気的に絶縁されつつ前記第2透明電極と対向することにより、前記第2透明電極と共に保持容量を形成する第3透明電極と、
をさらに備える、請求項1から3のいずれか1項に記載の液晶表示装置。 - 複数の画素の各々にゲート電極を形成する工程と、
前記ゲート電極を覆う部分を含む第1絶縁膜を形成する工程と、
前記第1絶縁膜上に透明酸化物層を成膜する工程と、
前記透明酸化物層から、前記第1絶縁膜を介して前記ゲート電極と対向するチャネル領域と、前記チャネル領域によって隔てられた第1端部および第2端部とを含む素子層と、前記素子層から離れた第1透明電極と、を形成する工程と、
前記第1透明電極から電気的に絶縁されつつ前記第1透明電極と対向することにより前記第1透明電極と共に保持容量を形成する第2透明電極を形成する工程と、
前記素子層の前記チャネル領域を覆う部分と、前記第1透明電極に接する部分とを有し、前記第1端部を露出する第1開口部と前記第2端部を露出する第2開口部とが設けられた第2絶縁膜を形成する工程と、
前記第1開口部および前記第2開口部を有する前記第2絶縁膜上に金属膜を形成する工程と、
エッチングによって前記金属膜をパターニングすることによって、前記第1開口部を通って前記素子層の前記第1端部に接続されるソース電極と、前記第2開口部を通って前記素子層の前記第2端部に接続されるドレイン電極と、を形成する工程と、
を備え、
前記第2絶縁膜を形成する工程は、前記第2絶縁膜が前記第1絶縁膜よりも薄く、かつ、前記第2絶縁膜が前記第1透明電極と前記第2透明電極との間に直接挟まれている部分を有するように行われ、
前記素子層および前記第1透明電極を形成する工程は、前記第1透明電極にエネルギー線を照射することによって、前記第1端部、前記第2端部および前記第1透明電極の抵抗率を低減する工程を含み、
前記第1端部、前記第2端部および前記第1透明電極の抵抗率を低減する工程において、前記素子層の前記チャネル領域は前記エネルギー線から前記ゲート電極によって遮蔽される、液晶表示装置の製造方法。 - 前記第2透明電極を覆う第3絶縁膜を形成する工程と、
前記第3絶縁膜によって前記第2透明電極から電気的に絶縁されつつ前記第2透明電極と対向することにより、前記第2透明電極と共に保持容量を形成する第3透明電極を形成する工程と、
をさらに備える、請求項5に記載の液晶表示装置の製造方法。 - 前記素子層および前記第1透明電極を形成する工程は、
前記透明酸化物層上に、前記素子層および前記第1透明電極に対応するパターンを有するマスク層を形成する工程と、
前記マスク層を用いて前記透明酸化物層のパターニングを行う工程と、
を含む、請求項6に記載の液晶表示装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2015249295A JP6832624B2 (ja) | 2015-12-22 | 2015-12-22 | 液晶表示装置およびその製造方法 |
US15/356,891 US9880436B2 (en) | 2015-12-22 | 2016-11-21 | Liquid crystal display device and manufacturing method thereof |
DE102016225549.5A DE102016225549A1 (de) | 2015-12-22 | 2016-12-20 | Flüssigkristall-displayvorrichtung und deren herstellungsverfahren |
CN201611199058.9A CN106990627A (zh) | 2015-12-22 | 2016-12-22 | 液晶显示装置及其制造方法 |
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CN105185740B (zh) * | 2015-06-26 | 2019-01-15 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板和显示装置 |
CN106252362B (zh) * | 2016-08-31 | 2019-07-12 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制备方法 |
JP6844845B2 (ja) | 2017-05-31 | 2021-03-17 | 三国電子有限会社 | 表示装置 |
US11201176B2 (en) | 2017-08-08 | 2021-12-14 | Boe Technology Group Co., Ltd. | Array substrate, display apparatus, and method of fabricating array substrate |
CN107808895B (zh) * | 2017-10-24 | 2019-10-01 | 深圳市华星光电半导体显示技术有限公司 | 透明oled显示器及其制作方法 |
US10446633B2 (en) | 2017-10-24 | 2019-10-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Transparent OLED display with transparent storage capacitor and manufacturing method thereof |
KR20190062695A (ko) | 2017-11-29 | 2019-06-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
CN117539095A (zh) * | 2018-01-05 | 2024-02-09 | 株式会社半导体能源研究所 | 显示装置、显示模块及电子设备 |
CN108803161B (zh) * | 2018-06-29 | 2021-07-09 | 上海天马微电子有限公司 | 显示面板、显示面板的制造方法以及显示装置 |
JP7190729B2 (ja) | 2018-08-31 | 2022-12-16 | 三国電子有限会社 | キャリア注入量制御電極を有する有機エレクトロルミネセンス素子 |
JP7246681B2 (ja) | 2018-09-26 | 2023-03-28 | 三国電子有限会社 | トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 |
JP7190740B2 (ja) | 2019-02-22 | 2022-12-16 | 三国電子有限会社 | エレクトロルミネセンス素子を有する表示装置 |
CN110518023B (zh) * | 2019-09-25 | 2021-12-24 | 福州京东方光电科技有限公司 | 阵列基板及其制备方法 |
JP7444436B2 (ja) | 2020-02-05 | 2024-03-06 | 三国電子有限会社 | 液晶表示装置 |
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JP2682997B2 (ja) | 1987-11-14 | 1997-11-26 | 株式会社日立製作所 | 補助容量付液晶表示装置及び補助容量付液晶表示装置の製造方法 |
JP2584290B2 (ja) | 1988-09-19 | 1997-02-26 | 三洋電機株式会社 | 液晶表示装置の製造方法 |
JP3370463B2 (ja) | 1994-12-22 | 2003-01-27 | 三菱電機株式会社 | マトリックス型表示装置 |
KR101177720B1 (ko) * | 2005-09-20 | 2012-08-28 | 엘지디스플레이 주식회사 | 액정표시장치와 그 제조방법 |
JP5235363B2 (ja) * | 2007-09-04 | 2013-07-10 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
TWI432865B (zh) * | 2010-12-01 | 2014-04-01 | Au Optronics Corp | 畫素結構及其製作方法 |
CN103403850B (zh) * | 2011-03-01 | 2016-05-18 | 夏普株式会社 | 薄膜晶体管及其制造方法以及显示装置 |
CN102636927B (zh) * | 2011-12-23 | 2015-07-29 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法 |
KR101960371B1 (ko) * | 2012-02-29 | 2019-03-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
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CN104205341B (zh) * | 2012-04-04 | 2017-04-05 | 夏普株式会社 | 半导体器件及其制造方法 |
KR20240001283A (ko) * | 2012-09-13 | 2024-01-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN103219389B (zh) * | 2013-03-21 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN103235455B (zh) * | 2013-03-25 | 2015-10-21 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶显示面板及其制造方法 |
CN103235458B (zh) * | 2013-04-27 | 2015-10-21 | 南京中电熊猫液晶显示科技有限公司 | Tft-lcd阵列基板及其制造方法 |
JP5454727B1 (ja) * | 2013-07-10 | 2014-03-26 | 日新電機株式会社 | 薄膜トランジスタの作製方法 |
KR102137392B1 (ko) * | 2013-10-08 | 2020-07-24 | 엘지디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN105814481B (zh) * | 2013-12-10 | 2018-09-18 | 夏普株式会社 | 半导体装置及其制造方法 |
CN104752517A (zh) * | 2013-12-31 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜晶体管及其制备方法和应用 |
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